GB1425651A - Channel firing thyristor - Google Patents

Channel firing thyristor

Info

Publication number
GB1425651A
GB1425651A GB877073A GB877073A GB1425651A GB 1425651 A GB1425651 A GB 1425651A GB 877073 A GB877073 A GB 877073A GB 877073 A GB877073 A GB 877073A GB 1425651 A GB1425651 A GB 1425651A
Authority
GB
United Kingdom
Prior art keywords
shunts
thyristor
cathode
firing thyristor
channel firing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB877073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1425651A publication Critical patent/GB1425651A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

1425651 Thyristors MOTOROLA Inc 22 Feb 1973 [3 April 1972] 8770/73 Heading H1K In a thyristor having a plurality of cathode emitter shunts 17 in the form of spaced portions of the base region which extend through the cathode emitter region to contact the cathode the shunts 17 are located at the apices of equilateral triangles and the edge of the gate electrode 15 is located at the apex of the triangle formed by the nearest shunts 17.
GB877073A 1972-04-03 1973-02-22 Channel firing thyristor Expired GB1425651A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24054972A 1972-04-03 1972-04-03

Publications (1)

Publication Number Publication Date
GB1425651A true GB1425651A (en) 1976-02-18

Family

ID=22906996

Family Applications (1)

Application Number Title Priority Date Filing Date
GB877073A Expired GB1425651A (en) 1972-04-03 1973-02-22 Channel firing thyristor

Country Status (5)

Country Link
JP (1) JPS4910682A (en)
CH (1) CH572668A5 (en)
DE (2) DE7312377U (en)
FR (1) FR2178931A1 (en)
GB (1) GB1425651A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2520134C3 (en) * 1975-05-06 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor with a rectangular semiconductor element
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage
JPS599967B2 (en) * 1978-07-14 1984-03-06 ミツミ電機株式会社 magnetic head
US4352118A (en) * 1979-03-02 1982-09-28 Electric Power Research Institute, Inc. Thyristor with segmented turn-on line for directing turn-on current
JP6731401B2 (en) * 2014-07-31 2020-07-29 アーベーベー・シュバイツ・アーゲーＡＢＢ Ｓｃｈｗｅｉｚ ＡＧ Phase control thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759754A (en) * 1969-12-02 1971-05-17 Licentia Gmbh THYRISTOR WITH SHORT-CIRCUIT TRANSMITTER ON ONE OF THE MAIN FACES BUT THYRISTOR DISC AND THYRISTOR PRODUCTION PROCESS

Also Published As

Publication number Publication date
DE7312377U (en) 1973-08-02
DE2316354A1 (en) 1973-10-18
CH572668A5 (en) 1976-02-13
JPS4910682A (en) 1974-01-30
FR2178931A1 (en) 1973-11-16

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed