JPS5374885A - Center gate type thyristor - Google Patents

Center gate type thyristor

Info

Publication number
JPS5374885A
JPS5374885A JP15131476A JP15131476A JPS5374885A JP S5374885 A JPS5374885 A JP S5374885A JP 15131476 A JP15131476 A JP 15131476A JP 15131476 A JP15131476 A JP 15131476A JP S5374885 A JPS5374885 A JP S5374885A
Authority
JP
Japan
Prior art keywords
gate type
center gate
type thyristor
row
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15131476A
Other languages
Japanese (ja)
Other versions
JPS5640981B2 (en
Inventor
Kazuhisa Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP15131476A priority Critical patent/JPS5374885A/en
Publication of JPS5374885A publication Critical patent/JPS5374885A/en
Publication of JPS5640981B2 publication Critical patent/JPS5640981B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To ensure a uniform gate ignition sensitivity as well as to increase the effective emitter area ratio, by giving a concentric arrangment with the emitter terminal only to the first row of the emitter short hole approaching the gate and outside the second row.
JP15131476A 1976-12-15 1976-12-15 Center gate type thyristor Granted JPS5374885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15131476A JPS5374885A (en) 1976-12-15 1976-12-15 Center gate type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15131476A JPS5374885A (en) 1976-12-15 1976-12-15 Center gate type thyristor

Publications (2)

Publication Number Publication Date
JPS5374885A true JPS5374885A (en) 1978-07-03
JPS5640981B2 JPS5640981B2 (en) 1981-09-25

Family

ID=15515928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15131476A Granted JPS5374885A (en) 1976-12-15 1976-12-15 Center gate type thyristor

Country Status (1)

Country Link
JP (1) JPS5374885A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903105A (en) * 1987-07-03 1990-02-20 Sgs-Thomson Microelectronics S.A. Thyristor or triac with emitter shorting stripes
JP2017526175A (en) * 2014-07-31 2017-09-07 アーベーベー・シュバイツ・アーゲー Phase control thyristor

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613291U (en) * 1984-06-13 1986-01-10 東急車輌製造株式会社 Containers for transporting solid and liquid cargo
JPS6130685U (en) * 1984-07-27 1986-02-24 東急車輌製造株式会社 Containers for transporting solid and liquid cargo
JPS6130684U (en) * 1984-07-27 1986-02-24 東急車輌製造株式会社 Containers for transporting solid and liquid cargo
JPS6138084U (en) * 1984-08-14 1986-03-10 東急車輌製造株式会社 Containers for transporting solid and liquid cargo
JPS6138085U (en) * 1984-08-14 1986-03-10 東急車輌製造株式会社 Containers for transporting solid and granular cargo
JPH0516147Y2 (en) * 1987-11-12 1993-04-27
JPH02191181A (en) * 1989-01-05 1990-07-27 Yasukazu Seki Freight container with inner bag

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903105A (en) * 1987-07-03 1990-02-20 Sgs-Thomson Microelectronics S.A. Thyristor or triac with emitter shorting stripes
JP2017526175A (en) * 2014-07-31 2017-09-07 アーベーベー・シュバイツ・アーゲー Phase control thyristor
US10355117B2 (en) 2014-07-31 2019-07-16 Abb Schweiz Ag Phase control thyristor

Also Published As

Publication number Publication date
JPS5640981B2 (en) 1981-09-25

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