GB1277246A - Controlled rectifier having auxiliary cathode - Google Patents

Controlled rectifier having auxiliary cathode

Info

Publication number
GB1277246A
GB1277246A GB43594/69A GB4359469A GB1277246A GB 1277246 A GB1277246 A GB 1277246A GB 43594/69 A GB43594/69 A GB 43594/69A GB 4359469 A GB4359469 A GB 4359469A GB 1277246 A GB1277246 A GB 1277246A
Authority
GB
United Kingdom
Prior art keywords
cathode
auxiliary
junction
emitter
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43594/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB1277246A publication Critical patent/GB1277246A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D3/00—Roof covering by making use of flat or curved slabs or stiff sheets
    • E04D3/36—Connecting; Fastening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Thyristors (AREA)

Abstract

1277246 Controlled rectifiers INTERNATIONAL RECTIFIER CORP 3 Sept 1969 [23 Sept 1968 (2) 16 July 1969] 43594/69 Heading H1K The controlled rectifier shown has a cathode emitter region bounded by junction 43 and an auxiliary emitter region bounded by junction 67. The floating contact 64 on the auxiliary emitter shorts that side of the junction 67 which lies adjacent the cathode contact 60 (to form an auxiliary gate) but does not short that part of the junction adjacent the gate contact 48. In one variant (Fig. 4, not shown) that edge of the auxiliary emitter region adjacent the cathode emitter is straight, as is the overlying contact (47), and the adjacent edge of the cathode contact (46) is also straight and in this area does not short the cathode emitter junction. In another variant (Fig. 7, not shown) the adjacent edges of the cathode emitter and auxiliary emitter are again straight and parallel, the auxiliary contact (81) extends uniformly over the cathode side of the auxiliary junction, and the cathode contact (80) is toothed so that adjacent the auxiliary emitter it extends only over limited areas of the cathode emitter junction.
GB43594/69A 1968-09-23 1969-09-03 Controlled rectifier having auxiliary cathode Expired GB1277246A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US76160368A 1968-09-23 1968-09-23
US76158768A 1968-09-23 1968-09-23
US84209669A 1969-07-16 1969-07-16

Publications (1)

Publication Number Publication Date
GB1277246A true GB1277246A (en) 1972-06-07

Family

ID=27419547

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43594/69A Expired GB1277246A (en) 1968-09-23 1969-09-03 Controlled rectifier having auxiliary cathode

Country Status (3)

Country Link
US (2) US3573572A (en)
GB (1) GB1277246A (en)
SE (1) SE362737B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021346B1 (en) * 1970-08-14 1975-07-22
BE787241A (en) * 1971-08-06 1973-02-05 Siemens Ag THYRISTOR
DE2146178C3 (en) * 1971-09-15 1979-09-27 Brown, Boveri & Cie Ag, 6800 Mannheim Thyristor with control current amplification
DE2211116A1 (en) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau CONTROLLABLE SEMICONDUCTOR COMPONENT WITH FOUR LAYERS OF ALTERNATING OPPOSITE CONDUCTIVITY TYPES
US4086612A (en) * 1973-06-12 1978-04-25 Siemens Aktiengesellschaft Thyristor
US4028721A (en) * 1973-08-01 1977-06-07 Hitachi, Ltd. Semiconductor controlled rectifier device
JPS5413959B2 (en) * 1973-10-17 1979-06-04
FR2254880B1 (en) * 1973-12-12 1978-11-10 Alsthom Cgee
DE2407696C3 (en) * 1974-02-18 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5168187A (en) * 1974-12-11 1976-06-12 Hitachi Ltd SAIRISUTA
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
JPS5939909B2 (en) * 1978-03-31 1984-09-27 株式会社東芝 semiconductor equipment
US4352118A (en) * 1979-03-02 1982-09-28 Electric Power Research Institute, Inc. Thyristor with segmented turn-on line for directing turn-on current
US4577210A (en) * 1982-08-12 1986-03-18 International Rectifier Corporation Controlled rectifier having ring gate with internal protrusion for dV/dt control

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3124703A (en) * 1960-06-13 1964-03-10 Figure
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
US3486088A (en) * 1968-05-22 1969-12-23 Nat Electronics Inc Regenerative gate thyristor construction

Also Published As

Publication number Publication date
SE362737B (en) 1973-12-17
DE1948155A1 (en) 1970-06-25
US3573572A (en) 1971-04-06
DE1948155B2 (en) 1977-04-28
US3586927A (en) 1971-06-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee