FR2377096A1 - Thyristor semi-conducteur - Google Patents

Thyristor semi-conducteur

Info

Publication number
FR2377096A1
FR2377096A1 FR7800320A FR7800320A FR2377096A1 FR 2377096 A1 FR2377096 A1 FR 2377096A1 FR 7800320 A FR7800320 A FR 7800320A FR 7800320 A FR7800320 A FR 7800320A FR 2377096 A1 FR2377096 A1 FR 2377096A1
Authority
FR
France
Prior art keywords
region
cathode
anode
semiconductor thyristor
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7800320A
Other languages
English (en)
Other versions
FR2377096B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2377096A1 publication Critical patent/FR2377096A1/fr
Application granted granted Critical
Publication of FR2377096B1 publication Critical patent/FR2377096B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Abstract

L'invention concerne un thyristor semi-conducteur ayant une région de cathode et une région d'anode. Selon l'invention, il comprend des moyens formant ballasts 23, 36 qui sont adjacents aux régions de cathode et aux régions d'anode. Il comprend en plus des premiers des seconds moyens formant électrodes 42 et 40 placés de façon que seules la région de cathode 30 et la région d'anode 18 soient respectivement en contact avec eux. La présente structure est compatible avec des structures classiques. L'invention s'applique notamment aux thyristors du type SCR et du type Triac.
FR7800320A 1977-01-07 1978-01-06 Thyristor semi-conducteur Granted FR2377096A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/757,554 US4292646A (en) 1977-01-07 1977-01-07 Semiconductor thyristor device having integral ballast means

Publications (2)

Publication Number Publication Date
FR2377096A1 true FR2377096A1 (fr) 1978-08-04
FR2377096B1 FR2377096B1 (fr) 1983-07-08

Family

ID=25048270

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7800320A Granted FR2377096A1 (fr) 1977-01-07 1978-01-06 Thyristor semi-conducteur

Country Status (8)

Country Link
US (1) US4292646A (fr)
JP (1) JPS5387184A (fr)
CA (1) CA1080858A (fr)
DE (1) DE2758616A1 (fr)
FR (1) FR2377096A1 (fr)
GB (1) GB1562046A (fr)
IT (1) IT1088746B (fr)
SE (1) SE433276B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
JPS60187058A (ja) * 1984-03-07 1985-09-24 Hitachi Ltd 半導体装置
EP0178582A3 (fr) * 1984-10-15 1989-02-08 Hitachi, Ltd. Dispositif semi-conducteur à blocage inverse
DE3902300C3 (de) * 1988-01-30 1995-02-09 Toshiba Kawasaki Kk Abschaltthyristor
JP2663679B2 (ja) * 1990-04-20 1997-10-15 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
JP3211604B2 (ja) * 1995-02-03 2001-09-25 株式会社日立製作所 半導体装置
JP2002184952A (ja) * 2000-12-15 2002-06-28 Shindengen Electric Mfg Co Ltd 半導体装置、半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3360696A (en) * 1965-05-14 1967-12-26 Rca Corp Five-layer symmetrical semiconductor switch
FR2198265A1 (fr) * 1972-09-06 1974-03-29 Bbc Brown Boveri & Cie

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3351826A (en) * 1963-02-05 1967-11-07 Leroy N Hermann Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions
GB1073560A (en) * 1964-12-28 1967-06-28 Gen Electric Improvements in semiconductor devices
JPS5310746B2 (fr) * 1973-05-11 1978-04-15

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3360696A (en) * 1965-05-14 1967-12-26 Rca Corp Five-layer symmetrical semiconductor switch
FR2198265A1 (fr) * 1972-09-06 1974-03-29 Bbc Brown Boveri & Cie

Also Published As

Publication number Publication date
JPS5751983B2 (fr) 1982-11-05
US4292646A (en) 1981-09-29
IT1088746B (it) 1985-06-10
FR2377096B1 (fr) 1983-07-08
DE2758616A1 (de) 1978-07-13
GB1562046A (en) 1980-03-05
SE433276B (sv) 1984-05-14
SE7714186L (sv) 1978-07-08
CA1080858A (fr) 1980-07-01
JPS5387184A (en) 1978-08-01

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Legal Events

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