SE7910463L - Styrelektrodreglerad halvledaranordning - Google Patents
Styrelektrodreglerad halvledaranordningInfo
- Publication number
- SE7910463L SE7910463L SE7910463A SE7910463A SE7910463L SE 7910463 L SE7910463 L SE 7910463L SE 7910463 A SE7910463 A SE 7910463A SE 7910463 A SE7910463 A SE 7910463A SE 7910463 L SE7910463 L SE 7910463L
- Authority
- SE
- Sweden
- Prior art keywords
- electrode assembly
- thyristor portion
- semiconductor device
- main
- wafer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP236479A JPS5595362A (en) | 1979-01-12 | 1979-01-12 | Turn-off thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7910463L true SE7910463L (sv) | 1980-07-13 |
| SE445083B SE445083B (sv) | 1986-05-26 |
Family
ID=11527196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7910463A SE445083B (sv) | 1979-01-12 | 1979-12-19 | Styrelektrodreglerad halvledaranordning |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4486768A (sv) |
| JP (1) | JPS5595362A (sv) |
| DE (1) | DE3000891A1 (sv) |
| GB (1) | GB2039413B (sv) |
| SE (1) | SE445083B (sv) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57117276A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Semiconductor device |
| DE3118291A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Triac und verfahren zu seinem betrieb |
| JPS5927571A (ja) * | 1982-08-05 | 1984-02-14 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
| DE3230741A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterschalter mit einem abschaltbaren thyristor |
| EP0108874B1 (en) * | 1982-11-15 | 1987-11-25 | Kabushiki Kaisha Toshiba | Radiation-controllable thyristor |
| DE3855922T2 (de) * | 1987-02-26 | 1998-01-02 | Toshiba Kawasaki Kk | An-Steuertechnik für Thyristor mit isolierter Steuerelektrode |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3544818A (en) * | 1967-12-26 | 1970-12-01 | Bell Telephone Labor Inc | Thyristor switch circuit |
| US4217504A (en) * | 1975-08-04 | 1980-08-12 | Licentia-Patent Verwaltungs Gmbh | Semiconductor switch with thyristors |
| DE2607678A1 (de) * | 1976-02-25 | 1977-09-01 | Siemens Ag | Anordnung zum herabsetzen der freiwerdezeit eines thyristors |
| US4092703A (en) * | 1977-03-15 | 1978-05-30 | Kabushiki Kaisha Meidensha | Gate controlled semiconductor device |
| US4115707A (en) * | 1977-03-31 | 1978-09-19 | Rca Corporation | Circuit for single-line control of GTO controlled rectifier conduction |
| JPS5942991B2 (ja) * | 1977-05-23 | 1984-10-18 | 株式会社日立製作所 | サイリスタ |
| DE2748316C2 (de) * | 1977-10-27 | 1986-09-04 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung zum Herabsetzen der Freiwerdezeit eines Thyristors |
-
1979
- 1979-01-12 JP JP236479A patent/JPS5595362A/ja active Pending
- 1979-12-17 GB GB7943380A patent/GB2039413B/en not_active Expired
- 1979-12-19 SE SE7910463A patent/SE445083B/sv not_active IP Right Cessation
-
1980
- 1980-01-11 DE DE19803000891 patent/DE3000891A1/de active Granted
-
1983
- 1983-08-26 US US06/526,796 patent/US4486768A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3000891A1 (de) | 1980-07-24 |
| JPS5595362A (en) | 1980-07-19 |
| SE445083B (sv) | 1986-05-26 |
| GB2039413A (en) | 1980-08-06 |
| US4486768A (en) | 1984-12-04 |
| GB2039413B (en) | 1983-09-14 |
| DE3000891C2 (sv) | 1988-07-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
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