GB1239067A - - Google Patents

Info

Publication number
GB1239067A
GB1239067A GB1239067DA GB1239067A GB 1239067 A GB1239067 A GB 1239067A GB 1239067D A GB1239067D A GB 1239067DA GB 1239067 A GB1239067 A GB 1239067A
Authority
GB
United Kingdom
Prior art keywords
emitter
shunts
region
base region
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1239067A publication Critical patent/GB1239067A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
GB1239067D 1967-12-26 1968-11-25 Expired GB1239067A ( )

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69345467A 1967-12-26 1967-12-26

Publications (1)

Publication Number Publication Date
GB1239067A true GB1239067A ( ) 1971-07-14

Family

ID=24784718

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1239067D Expired GB1239067A ( ) 1967-12-26 1968-11-25

Country Status (5)

Country Link
US (1) US3476992A ( )
BE (1) BE725781A ( )
FR (1) FR1599299A ( )
GB (1) GB1239067A ( )
IE (1) IE32502B1 ( )

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150390A (en) * 1976-10-08 1979-04-17 Bbc Brown, Boveri & Company, Limited Thyristor with gate and emitter shunts distributed over the cathode surface

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3599061A (en) * 1969-09-30 1971-08-10 Usa Scr emitter short patterns
US3619738A (en) * 1969-10-13 1971-11-09 Tokyo Shibaura Electric Co Semiconductor device with improved connection to control electrode region
BE759754A (fr) * 1969-12-02 1971-05-17 Licentia Gmbh Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
GB1301193A (en) * 1970-02-27 1972-12-29 Mullard Ltd Improvements in semiconductor devices
US3792320A (en) * 1972-05-22 1974-02-12 J Hutson Semiconductor switch devices having improved shorted emitter configurations
US3795845A (en) * 1972-12-26 1974-03-05 Ibm Semiconductor chip having connecting pads arranged in a non-orthogonal array
US3896477A (en) * 1973-11-07 1975-07-22 Jearld L Hutson Multilayer semiconductor switching devices
US3918082A (en) * 1973-11-07 1975-11-04 Jearld L Hutson Semiconductor switching device
US4079406A (en) * 1974-08-13 1978-03-14 Siemens Aktiengesellschaft Thyristor having a plurality of emitter shorts in defined spacial relationship
DE2506102C3 (de) * 1975-02-13 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Halbleitergleichrichter
DE2520134C3 (de) * 1975-05-06 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor mit einem rechteckigen Halbleiterelement
JPS5950109B2 (ja) * 1976-07-12 1984-12-06 日本電気株式会社 半導体装置
DE2815606A1 (de) * 1978-04-11 1979-10-31 Fiz Tekhn I Im A F Joffe Akade Thyristor
JPS54149480A (en) * 1978-05-12 1979-11-22 Fiz Tekhn I Im Ei Efu Iofue Ak Thyristor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3239728A (en) * 1962-07-17 1966-03-08 Gen Electric Semiconductor switch
NL296608A ( ) * 1962-08-15
US3277352A (en) * 1963-03-14 1966-10-04 Itt Four layer semiconductor device
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3337782A (en) * 1964-04-01 1967-08-22 Westinghouse Electric Corp Semiconductor controlled rectifier having a shorted emitter at a plurality of points

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150390A (en) * 1976-10-08 1979-04-17 Bbc Brown, Boveri & Company, Limited Thyristor with gate and emitter shunts distributed over the cathode surface

Also Published As

Publication number Publication date
FR1599299A ( ) 1970-07-15
US3476992A (en) 1969-11-04
IE32502B1 (en) 1973-08-22
BE725781A ( ) 1969-06-20
IE32502L (en) 1969-06-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
429A Application made for amendment of specification (sect. 29/1949)
429D Case decided by the comptroller ** specification amended (sect. 29/1949)
PCNP Patent ceased through non-payment of renewal fee