FR2383525A1 - Procede de fabrication de lignes metalliques tres etroites - Google Patents

Procede de fabrication de lignes metalliques tres etroites

Info

Publication number
FR2383525A1
FR2383525A1 FR7803454A FR7803454A FR2383525A1 FR 2383525 A1 FR2383525 A1 FR 2383525A1 FR 7803454 A FR7803454 A FR 7803454A FR 7803454 A FR7803454 A FR 7803454A FR 2383525 A1 FR2383525 A1 FR 2383525A1
Authority
FR
France
Prior art keywords
manufacturing
mask layer
thin film
metal lines
narrow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7803454A
Other languages
English (en)
Other versions
FR2383525B1 (fr
Inventor
Erik P Harris
Robert W Keyes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2383525A1 publication Critical patent/FR2383525A1/fr
Application granted granted Critical
Publication of FR2383525B1 publication Critical patent/FR2383525B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/111—Narrow masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/818—Coating
    • Y10S505/82—And etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

Procédé de fabrication de lignes métalliques supra-conductrices très étroites utilisant des techniques de décapage et d'implantation ionique. Le substrat 10 est revêtu d'un film mince métallique lui-même recouvert d'une couche de masque 14. Par des procédés classiques de décapage; on élimine certaines parties de la couche de masque et du film mince pour obtenir la configuration 12-1 de film. L'ensemble est soumis à une implantation ionique comme décrit sur la figure et, la couche de masque et le film mince non soumis à l'implantation sont décapés, laissant une ligne métallique très étroite sur le substrat Utilisation dans la technologie des circuits imprimés et supraconducteurs.
FR7803454A 1977-03-07 1978-02-01 Procede de fabrication de lignes metalliques tres etroites Granted FR2383525A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/775,335 US4093503A (en) 1977-03-07 1977-03-07 Method for fabricating ultra-narrow metallic lines

Publications (2)

Publication Number Publication Date
FR2383525A1 true FR2383525A1 (fr) 1978-10-06
FR2383525B1 FR2383525B1 (fr) 1980-08-29

Family

ID=25104082

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7803454A Granted FR2383525A1 (fr) 1977-03-07 1978-02-01 Procede de fabrication de lignes metalliques tres etroites

Country Status (7)

Country Link
US (1) US4093503A (fr)
JP (1) JPS53109828A (fr)
CA (1) CA1092727A (fr)
DE (1) DE2808701A1 (fr)
FR (1) FR2383525A1 (fr)
GB (1) GB1544613A (fr)
IT (1) IT1112664B (fr)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277883A (en) * 1977-12-27 1981-07-14 Raytheon Company Integrated circuit manufacturing method
US4256514A (en) * 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body
US4201603A (en) * 1978-12-04 1980-05-06 Rca Corporation Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
US4263605A (en) * 1979-01-04 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted, improved ohmic contacts for GaAs semiconductor devices
US4214966A (en) * 1979-03-20 1980-07-29 Bell Telephone Laboratories, Incorporated Process useful in the fabrication of articles with metallized surfaces
JPS6059994B2 (ja) * 1979-10-09 1985-12-27 三菱電機株式会社 アルミニウム膜またはアルミニウム合金膜の微細パタ−ン形成方法
JPS5656636A (en) * 1979-10-13 1981-05-18 Mitsubishi Electric Corp Processing method of fine pattern
JPS5679449A (en) * 1979-11-30 1981-06-30 Mitsubishi Electric Corp Production of semiconductor device
US4274909A (en) * 1980-03-17 1981-06-23 International Business Machines Corporation Method for forming ultra fine deep dielectric isolation
US4343675A (en) * 1980-09-30 1982-08-10 The United States Of America As Represented By The United States Department Of Energy Method of manufacturing hollow members having uniform wall thickness through use of ablation
US4438556A (en) * 1981-01-12 1984-03-27 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions
GB2131748B (en) * 1982-12-15 1986-05-21 Secr Defence Silicon etch process
JPS59132136A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 半導体装置の製造方法
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
US4490901A (en) * 1983-05-05 1985-01-01 International Business Machines Corporation Adjustment of Josephson junctions by ion implantation
US4608296A (en) * 1983-12-06 1986-08-26 Energy Conversion Devices, Inc. Superconducting films and devices exhibiting AC to DC conversion
US4569124A (en) * 1984-05-22 1986-02-11 Hughes Aircraft Company Method for forming thin conducting lines by ion implantation and preferential etching
US4532698A (en) * 1984-06-22 1985-08-06 International Business Machines Corporation Method of making ultrashort FET using oblique angle metal deposition and ion implantation
US4687730A (en) * 1985-10-30 1987-08-18 Rca Corporation Lift-off technique for producing metal pattern using single photoresist processing and oblique angle metal deposition
US4648937A (en) * 1985-10-30 1987-03-10 International Business Machines Corporation Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer
US4631113A (en) * 1985-12-23 1986-12-23 Signetics Corporation Method for manufacturing a narrow line of photosensitive material
DE3602461A1 (de) * 1986-01-28 1987-07-30 Telefunken Electronic Gmbh Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
US4946735A (en) * 1986-02-10 1990-08-07 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
US4952446A (en) * 1986-02-10 1990-08-28 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
US4689869A (en) * 1986-04-07 1987-09-01 International Business Machines Corporation Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length
US4772539A (en) * 1987-03-23 1988-09-20 International Business Machines Corporation High resolution E-beam lithographic technique
JP2823276B2 (ja) * 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
EP0416141A1 (fr) * 1989-09-04 1991-03-13 Siemens Aktiengesellschaft Procédé de fabrication d'un FET ayant une zone de porte disposée asymétriquement
US5593918A (en) * 1994-04-22 1997-01-14 Lsi Logic Corporation Techniques for forming superconductive lines
US5444007A (en) * 1994-08-03 1995-08-22 Kabushiki Kaisha Toshiba Formation of trenches having different profiles
WO1998033665A1 (fr) * 1997-02-03 1998-08-06 The Trustees Of Columbia University In The City Of New York Formation de dispositifs supraconducteurs selon une technique d'attaque selective
CA2197400C (fr) * 1997-02-12 2004-08-24 Universite De Sherbrooke Fabrication de structures submicroniques en siliciure sur silicium par gravure a faisceau electronique sans agent de reserve
US6261938B1 (en) 1997-02-12 2001-07-17 Quantiscript, Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
US6077790A (en) * 1997-03-14 2000-06-20 Micron Technology, Inc. Etching process using a buffer layer
US5963804A (en) * 1997-03-14 1999-10-05 Micron Technology, Inc. Method of making a doped silicon structure with impression image on opposing roughened surfaces
US6309975B1 (en) 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
US5946595A (en) * 1997-03-14 1999-08-31 Micron Technology, Inc. Method of forming a local interconnect between electronic devices on a semiconductor substrate
US6027967A (en) 1997-07-03 2000-02-22 Micron Technology Inc. Method of making a fin-like stacked capacitor
US6303956B1 (en) * 1999-02-26 2001-10-16 Micron Technology, Inc. Conductive container structures having a dielectric cap
US6147032A (en) * 1999-05-19 2000-11-14 Trw Inc. Method for indirect Ion implantation of oxide superconductive films
US20020063263A1 (en) * 2000-11-30 2002-05-30 Scott David B. Metal oxide semiconductor transistor with self-aligned channel implant
US6576536B1 (en) * 2001-04-02 2003-06-10 Advanced Micro Devices, Inc. Ultra narrow lines for field effect transistors
US20030236169A1 (en) * 2002-01-17 2003-12-25 Wolfgang Lang Method for producing a superconducting circuit
US20060047102A1 (en) * 2004-09-02 2006-03-02 Stephen Weinhold Spheroidal polyester polymer particles
US8772183B2 (en) * 2011-10-20 2014-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming an integrated circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3801366A (en) * 1971-02-16 1974-04-02 J Lemelson Method of making an electrical circuit
US3738880A (en) * 1971-06-23 1973-06-12 Rca Corp Method of making a semiconductor device

Also Published As

Publication number Publication date
IT1112664B (it) 1986-01-20
IT7820425A0 (it) 1978-02-21
JPS5644592B2 (fr) 1981-10-20
JPS53109828A (en) 1978-09-26
CA1092727A (fr) 1980-12-30
US4093503A (en) 1978-06-06
FR2383525B1 (fr) 1980-08-29
GB1544613A (en) 1979-04-25
DE2808701A1 (de) 1978-09-14

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Legal Events

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