JPS5546591A - Method of forming thin film - Google Patents

Method of forming thin film

Info

Publication number
JPS5546591A
JPS5546591A JP12188978A JP12188978A JPS5546591A JP S5546591 A JPS5546591 A JP S5546591A JP 12188978 A JP12188978 A JP 12188978A JP 12188978 A JP12188978 A JP 12188978A JP S5546591 A JPS5546591 A JP S5546591A
Authority
JP
Japan
Prior art keywords
film
thin film
coated
conductive layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12188978A
Other languages
Japanese (ja)
Inventor
Toru Kira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12188978A priority Critical patent/JPS5546591A/en
Publication of JPS5546591A publication Critical patent/JPS5546591A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To reduce the taper of an opening perforated at a thin film coated on the lower thin film as a conductive layer on a semiconductor substrate by coating lower thin film on the substrate and an upper thin film thereon, coating selective plating film at an opening to be formed at the upper thin film, then providing the upper thin film thereon, and removing the plated film.
CONSTITUTION: A lower thin film 2 is coated as conductive film on the entire surface of a semiconductor substrate 1, and coated with photoresist film 5 on the portion except for openings. Thick Cu films 6 are formed by plating on the portion to be perforated with the openings while carrying the end on the resist film 5. Then, the film 5 is removed to retain the film 6 in mushroom shape with cutout formed on the bottom. Then, an upper thin film 7 is coated on the substrate 1 as conductive layer exposed from the film 6, the film 6 is removed together with the film 6 to thereby obtain laminated film of the small film 7 of tapered portion and the film 2 under the film 7. Thus, it can finely work the conductive layer.
COPYRIGHT: (C)1980,JPO&Japio
JP12188978A 1978-09-29 1978-09-29 Method of forming thin film Pending JPS5546591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12188978A JPS5546591A (en) 1978-09-29 1978-09-29 Method of forming thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12188978A JPS5546591A (en) 1978-09-29 1978-09-29 Method of forming thin film

Publications (1)

Publication Number Publication Date
JPS5546591A true JPS5546591A (en) 1980-04-01

Family

ID=14822407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12188978A Pending JPS5546591A (en) 1978-09-29 1978-09-29 Method of forming thin film

Country Status (1)

Country Link
JP (1) JPS5546591A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5194775A (en) * 1975-02-19 1976-08-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5194775A (en) * 1975-02-19 1976-08-19

Similar Documents

Publication Publication Date Title
FR2383525A1 (en) METHOD OF MANUFACTURING VERY NARROW METAL LINES
JPS5669835A (en) Method for forming thin film pattern
JPS5546591A (en) Method of forming thin film
JPS5484932A (en) Forming method of multi-layer construction
JPS642339A (en) Manufacture of semiconductor device
JPS5524414A (en) Electrode forming process
JPS5524477A (en) Integrated circuit
JPS5480093A (en) Manufacture of semiconductor device
JPS5586145A (en) Manufacture of capacitor
JPS5460557A (en) Solder electrode forming method
JPS5545196A (en) Fabricating method for thin-film magnetic head
JPS5368578A (en) Photo mask
JPS5586115A (en) Electrode formation
JPS5553443A (en) Formation of electrode of semiconductor device
JPS53106585A (en) Production of semiconductor device
JPS54111763A (en) Carrier tape for tape carrier
JPS5534651A (en) Structure of primary layer of plated film
JPS5466091A (en) Formation method of conductive path of semiconductor device
JPS53119228A (en) Production of perforated plated metal foil
JPS5421272A (en) Metal photo mask
JPS5493971A (en) Production of semiconductor device
JPS55130148A (en) Forming method of bump electrode
JPS57211785A (en) Electrode formation of semiconductor device
JPS54134036A (en) Manufacture of perforated plated product
JPS5620192A (en) Plating method for thick film paste