JPS5546591A - Method of forming thin film - Google Patents
Method of forming thin filmInfo
- Publication number
- JPS5546591A JPS5546591A JP12188978A JP12188978A JPS5546591A JP S5546591 A JPS5546591 A JP S5546591A JP 12188978 A JP12188978 A JP 12188978A JP 12188978 A JP12188978 A JP 12188978A JP S5546591 A JPS5546591 A JP S5546591A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- coated
- conductive layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To reduce the taper of an opening perforated at a thin film coated on the lower thin film as a conductive layer on a semiconductor substrate by coating lower thin film on the substrate and an upper thin film thereon, coating selective plating film at an opening to be formed at the upper thin film, then providing the upper thin film thereon, and removing the plated film.
CONSTITUTION: A lower thin film 2 is coated as conductive film on the entire surface of a semiconductor substrate 1, and coated with photoresist film 5 on the portion except for openings. Thick Cu films 6 are formed by plating on the portion to be perforated with the openings while carrying the end on the resist film 5. Then, the film 5 is removed to retain the film 6 in mushroom shape with cutout formed on the bottom. Then, an upper thin film 7 is coated on the substrate 1 as conductive layer exposed from the film 6, the film 6 is removed together with the film 6 to thereby obtain laminated film of the small film 7 of tapered portion and the film 2 under the film 7. Thus, it can finely work the conductive layer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12188978A JPS5546591A (en) | 1978-09-29 | 1978-09-29 | Method of forming thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12188978A JPS5546591A (en) | 1978-09-29 | 1978-09-29 | Method of forming thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5546591A true JPS5546591A (en) | 1980-04-01 |
Family
ID=14822407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12188978A Pending JPS5546591A (en) | 1978-09-29 | 1978-09-29 | Method of forming thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5546591A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5194775A (en) * | 1975-02-19 | 1976-08-19 |
-
1978
- 1978-09-29 JP JP12188978A patent/JPS5546591A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5194775A (en) * | 1975-02-19 | 1976-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2383525A1 (en) | METHOD OF MANUFACTURING VERY NARROW METAL LINES | |
JPS5669835A (en) | Method for forming thin film pattern | |
JPS5546591A (en) | Method of forming thin film | |
JPS5484932A (en) | Forming method of multi-layer construction | |
JPS642339A (en) | Manufacture of semiconductor device | |
JPS5524414A (en) | Electrode forming process | |
JPS5524477A (en) | Integrated circuit | |
JPS5480093A (en) | Manufacture of semiconductor device | |
JPS5586145A (en) | Manufacture of capacitor | |
JPS5460557A (en) | Solder electrode forming method | |
JPS5545196A (en) | Fabricating method for thin-film magnetic head | |
JPS5368578A (en) | Photo mask | |
JPS5586115A (en) | Electrode formation | |
JPS5553443A (en) | Formation of electrode of semiconductor device | |
JPS53106585A (en) | Production of semiconductor device | |
JPS54111763A (en) | Carrier tape for tape carrier | |
JPS5534651A (en) | Structure of primary layer of plated film | |
JPS5466091A (en) | Formation method of conductive path of semiconductor device | |
JPS53119228A (en) | Production of perforated plated metal foil | |
JPS5421272A (en) | Metal photo mask | |
JPS5493971A (en) | Production of semiconductor device | |
JPS55130148A (en) | Forming method of bump electrode | |
JPS57211785A (en) | Electrode formation of semiconductor device | |
JPS54134036A (en) | Manufacture of perforated plated product | |
JPS5620192A (en) | Plating method for thick film paste |