FR2375720A1 - Procede de fabrication de circuits integres - Google Patents

Procede de fabrication de circuits integres

Info

Publication number
FR2375720A1
FR2375720A1 FR7739314A FR7739314A FR2375720A1 FR 2375720 A1 FR2375720 A1 FR 2375720A1 FR 7739314 A FR7739314 A FR 7739314A FR 7739314 A FR7739314 A FR 7739314A FR 2375720 A1 FR2375720 A1 FR 2375720A1
Authority
FR
France
Prior art keywords
stripper
windows
manufacturing process
integrated circuits
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7739314A
Other languages
English (en)
French (fr)
Other versions
FR2375720B1 (index.php
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2375720A1 publication Critical patent/FR2375720A1/fr
Application granted granted Critical
Publication of FR2375720B1 publication Critical patent/FR2375720B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W10/00—
    • H10W10/01—
    • H10W10/0124—
    • H10W10/0126—
    • H10W10/021—
    • H10W10/13—
    • H10W10/20—

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
FR7739314A 1976-12-27 1977-12-27 Procede de fabrication de circuits integres Granted FR2375720A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75472376A 1976-12-27 1976-12-27

Publications (2)

Publication Number Publication Date
FR2375720A1 true FR2375720A1 (fr) 1978-07-21
FR2375720B1 FR2375720B1 (index.php) 1982-07-30

Family

ID=25036034

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739314A Granted FR2375720A1 (fr) 1976-12-27 1977-12-27 Procede de fabrication de circuits integres

Country Status (7)

Country Link
US (1) US4155783A (index.php)
JP (1) JPS5383585A (index.php)
CA (1) CA1090006A (index.php)
DE (1) DE2758283C2 (index.php)
FR (1) FR2375720A1 (index.php)
GB (1) GB1548778A (index.php)
IT (1) IT1090820B (index.php)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572052A (en) * 1978-11-27 1980-05-30 Fujitsu Ltd Preparation of semiconductor device
US4677456A (en) * 1979-05-25 1987-06-30 Raytheon Company Semiconductor structure and manufacturing method
US4289550A (en) * 1979-05-25 1981-09-15 Raytheon Company Method of forming closely spaced device regions utilizing selective etching and diffusion
US4255212A (en) * 1979-07-02 1981-03-10 The Regents Of The University Of California Method of fabricating photovoltaic cells
GB2115609B (en) * 1982-02-25 1986-04-30 Raytheon Co Semiconductor structure manufacturing method
JPH073858B2 (ja) * 1984-04-11 1995-01-18 株式会社日立製作所 半導体装置の製造方法
US4824795A (en) * 1985-12-19 1989-04-25 Siliconix Incorporated Method for obtaining regions of dielectrically isolated single crystal silicon
JPS6327188U (index.php) * 1986-08-05 1988-02-23
US5399901A (en) * 1994-04-20 1995-03-21 General Instrument Corp. Semiconductor devices having a mesa structure and method of fabrication for improved surface voltage breakdown characteristics
US6822332B2 (en) * 2002-09-23 2004-11-23 International Business Machines Corporation Fine line circuitization
TWI404136B (zh) * 2010-04-13 2013-08-01 Univ Nat Taipei Technology 製作底切蝕刻微結構的製程方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3725160A (en) * 1970-12-30 1973-04-03 Texas Instruments Inc High density integrated circuits
US3801390A (en) * 1970-12-28 1974-04-02 Bell Telephone Labor Inc Preparation of high resolution shadow masks
US3901737A (en) * 1974-02-15 1975-08-26 Signetics Corp Method for forming a semiconductor structure having islands isolated by moats
US3920482A (en) * 1974-03-13 1975-11-18 Signetics Corp Method for forming a semiconductor structure having islands isolated by adjacent moats
US3966514A (en) * 1975-06-30 1976-06-29 Ibm Corporation Method for forming dielectric isolation combining dielectric deposition and thermal oxidation
US3986200A (en) * 1974-01-02 1976-10-12 Signetics Corporation Semiconductor structure and method
US4056413A (en) * 1975-10-06 1977-11-01 Hitachi, Ltd. Etching method for flattening a silicon substrate utilizing an anisotropic alkali etchant

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3716425A (en) * 1970-08-24 1973-02-13 Motorola Inc Method of making semiconductor devices through overlapping diffusions
US3748187A (en) * 1971-08-03 1973-07-24 Hughes Aircraft Co Self-registered doped layer for preventing field inversion in mis circuits
US3796612A (en) * 1971-08-05 1974-03-12 Scient Micro Syst Inc Semiconductor isolation method utilizing anisotropic etching and differential thermal oxidation
JPS4984380A (index.php) * 1972-12-19 1974-08-13
US4047195A (en) * 1973-11-12 1977-09-06 Scientific Micro Systems, Inc. Semiconductor structure
JPS5289484A (en) * 1975-04-25 1977-07-27 Toyo Dengu Seisakushiyo Kk Semiconductor ic device
US3961999A (en) * 1975-06-30 1976-06-08 Ibm Corporation Method for forming recessed dielectric isolation with a minimized "bird's beak" problem
DE2529598C3 (de) * 1975-07-02 1978-05-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit bipolaren Transistoren
US4066473A (en) * 1976-07-15 1978-01-03 Fairchild Camera And Instrument Corporation Method of fabricating high-gain transistors

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3801390A (en) * 1970-12-28 1974-04-02 Bell Telephone Labor Inc Preparation of high resolution shadow masks
US3725160A (en) * 1970-12-30 1973-04-03 Texas Instruments Inc High density integrated circuits
US3986200A (en) * 1974-01-02 1976-10-12 Signetics Corporation Semiconductor structure and method
US3901737A (en) * 1974-02-15 1975-08-26 Signetics Corp Method for forming a semiconductor structure having islands isolated by moats
US3920482A (en) * 1974-03-13 1975-11-18 Signetics Corp Method for forming a semiconductor structure having islands isolated by adjacent moats
US3966514A (en) * 1975-06-30 1976-06-29 Ibm Corporation Method for forming dielectric isolation combining dielectric deposition and thermal oxidation
US4056413A (en) * 1975-10-06 1977-11-01 Hitachi, Ltd. Etching method for flattening a silicon substrate utilizing an anisotropic alkali etchant

Also Published As

Publication number Publication date
DE2758283C2 (de) 1986-06-12
FR2375720B1 (index.php) 1982-07-30
US4155783A (en) 1979-05-22
DE2758283A1 (de) 1978-07-06
CA1090006A (en) 1980-11-18
JPS6123657B2 (index.php) 1986-06-06
JPS5383585A (en) 1978-07-24
GB1548778A (en) 1979-07-18
IT1090820B (it) 1985-06-26

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Legal Events

Date Code Title Description
ST Notification of lapse