JPS57201074A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57201074A JPS57201074A JP8644481A JP8644481A JPS57201074A JP S57201074 A JPS57201074 A JP S57201074A JP 8644481 A JP8644481 A JP 8644481A JP 8644481 A JP8644481 A JP 8644481A JP S57201074 A JPS57201074 A JP S57201074A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxidized
- substrate
- oxidized film
- interval
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 abstract 1
- 239000003814 drug Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To obtain an ultrafine semiconductor device in which distances between diffused layers and between metal wires less than the minimum size of a photoetching method and a method of manufacturing the same by providing a groove formed on the surface of an oxidized film particularly at the side of a semiconductor film and of a substrate and the insulating film directly uhder the oxidized film of the side surface. CONSTITUTION:A nitrided film 15 and polysilicon 14 are selectively photolithographically removed on a silicon substrate 11, the side surface of the formed polysilicon 14a is oxidized, thereby growing an oxidized film or the like. Subsequently, the surface of the surface exposed from the substrate 11 by medicine treatment is etched in the deisired depth, forming parallel grooves 17a, and an oxdized film 18'a is allowed to remain on the side surface of the groove. The steps further continue, but the pitch P between the bases becomes a half as compared with the conventional method in the width and interval of the polysilicons 14a, 14b, 14c, and the interval between the metal electrodes 22 and 23 is defined by the oxidized film 16, thereby reducing smaller than the minimum size of the photolithographic removal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8644481A JPS57201074A (en) | 1981-06-04 | 1981-06-04 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8644481A JPS57201074A (en) | 1981-06-04 | 1981-06-04 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57201074A true JPS57201074A (en) | 1982-12-09 |
Family
ID=13887083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8644481A Pending JPS57201074A (en) | 1981-06-04 | 1981-06-04 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57201074A (en) |
-
1981
- 1981-06-04 JP JP8644481A patent/JPS57201074A/en active Pending
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