FR2363892A1 - Module semi-conducteur refroidi par conduction et son procede de fabrication - Google Patents

Module semi-conducteur refroidi par conduction et son procede de fabrication

Info

Publication number
FR2363892A1
FR2363892A1 FR7722460A FR7722460A FR2363892A1 FR 2363892 A1 FR2363892 A1 FR 2363892A1 FR 7722460 A FR7722460 A FR 7722460A FR 7722460 A FR7722460 A FR 7722460A FR 2363892 A1 FR2363892 A1 FR 2363892A1
Authority
FR
France
Prior art keywords
semiconductor
manufacturing process
cover
semiconductor module
semiconductor block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7722460A
Other languages
English (en)
Other versions
FR2363892B1 (fr
Inventor
Nicholas G Koopman
Paul A Tott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2363892A1 publication Critical patent/FR2363892A1/fr
Application granted granted Critical
Publication of FR2363892B1 publication Critical patent/FR2363892B1/fr
Granted legal-status Critical Current

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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Dispositif permettant de transférer la chaleur engendrée par des blocs semi-conducteurs contenus dans un module de circuit électronique. Entre le bloc semi-conducteur 2 et le capot servant de puits de chaleur 8 est insérée une patte de métal 10 favorisant l'évacuation de la chaleur provenant du bloc semi-conducteur 2. La patte de métal 10 est liée par soudure au capot 8 soit directement soit par l'intermédiaire d'un film mince 9. Cette patte 10 est liée au bloc semi-conducteur 2 de façon séparable. Cette structure permet le retrait du capot et de la patte de métal 10 en cas de changement ou de réparation du bloc semi-conducteur 2. Utilisation dans la technologie des semi-conducteurs et des circuits intégrés.
FR7722460A 1976-09-03 1977-07-13 Module semi-conducteur refroidi par conduction et son procede de fabrication Granted FR2363892A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/720,471 US4034469A (en) 1976-09-03 1976-09-03 Method of making conduction-cooled circuit package

Publications (2)

Publication Number Publication Date
FR2363892A1 true FR2363892A1 (fr) 1978-03-31
FR2363892B1 FR2363892B1 (fr) 1979-03-02

Family

ID=24894127

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7722460A Granted FR2363892A1 (fr) 1976-09-03 1977-07-13 Module semi-conducteur refroidi par conduction et son procede de fabrication

Country Status (9)

Country Link
US (2) US4034469A (fr)
JP (1) JPS5928989B2 (fr)
AR (1) AR219299A1 (fr)
BE (1) BE857399A (fr)
CA (1) CA1093699A (fr)
FR (1) FR2363892A1 (fr)
GB (1) GB1569453A (fr)
IT (1) IT1114116B (fr)
SE (1) SE435126B (fr)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034469A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method of making conduction-cooled circuit package
US4153988A (en) * 1977-07-15 1979-05-15 International Business Machines Corporation High performance integrated circuit semiconductor package and method of making
US4253515A (en) * 1978-09-29 1981-03-03 United States Of America As Represented By The Secretary Of The Navy Integrated circuit temperature gradient and moisture regulator
US4279292A (en) * 1978-09-29 1981-07-21 The United States Of America As Represented By The Secretary Of The Navy Charge coupled device temperature gradient and moisture regulator
JPS5591145A (en) * 1978-12-28 1980-07-10 Narumi China Corp Production of ceramic package
US4237086A (en) * 1979-02-22 1980-12-02 Rockwell International Corporation Method for releasably mounting a substrate on a base providing heat transfer and electrical conduction
DE2926785C2 (de) * 1979-07-03 1985-12-12 HIGRATHERM electric GmbH, 7100 Heilbronn Bipolarer Transistor und Verfahren zu seiner Herstellung
US4388967A (en) * 1980-09-02 1983-06-21 Thermalloy Incorporated Solderable mounting stakes for heat sinks
US4561011A (en) * 1982-10-05 1985-12-24 Mitsubishi Denki Kabushiki Kaisha Dimensionally stable semiconductor device
US4448240A (en) * 1982-12-20 1984-05-15 International Business Machines Corporation Telescoping thermal conduction element for cooling semiconductor devices
CA1235528A (fr) * 1984-10-11 1988-04-19 Teradyne, Inc. Radiateur pour composants electroniques portes par des substrats en matiere ceramique
US5032897A (en) * 1990-02-28 1991-07-16 International Business Machines Corp. Integrated thermoelectric cooling
US5012325A (en) * 1990-04-24 1991-04-30 International Business Machines Corp. Thermoelectric cooling via electrical connections
JPH07109867B2 (ja) * 1991-04-15 1995-11-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体チツプの冷却構造
GB9218233D0 (en) * 1992-08-27 1992-10-14 Dsk Technology International L Cooling of electronics equipment
US5339216A (en) * 1993-03-02 1994-08-16 National Semiconductor Corporation Device and method for reducing thermal cycling in a semiconductor package
US5730636A (en) * 1995-09-29 1998-03-24 Micron Display Technology, Inc. Self-dimensioning support member for use in a field emission display
US5808874A (en) 1996-05-02 1998-09-15 Tessera, Inc. Microelectronic connections with liquid conductive elements
US6016006A (en) * 1996-06-24 2000-01-18 Intel Corporation Thermal grease insertion and retention
TW406454B (en) 1996-10-10 2000-09-21 Berg Tech Inc High density connector and method of manufacture
US5891753A (en) * 1997-01-24 1999-04-06 Micron Technology, Inc. Method and apparatus for packaging flip chip bare die on printed circuit boards
US5796038A (en) * 1997-06-16 1998-08-18 Vlsi Technology, Inc. Technique to produce cavity-up HBGA packages
US5981310A (en) * 1998-01-22 1999-11-09 International Business Machines Corporation Multi-chip heat-sink cap assembly
US6117797A (en) * 1998-09-03 2000-09-12 Micron Technology, Inc. Attachment method for heat sinks and devices involving removal of misplaced encapsulant
US6214647B1 (en) 1998-09-23 2001-04-10 International Business Machines Corporation Method for bonding heatsink to multiple-height chip
US5986887A (en) * 1998-10-28 1999-11-16 Unisys Corporation Stacked circuit board assembly adapted for heat dissipation
US6084775A (en) * 1998-12-09 2000-07-04 International Business Machines Corporation Heatsink and package structures with fusible release layer
US6461891B1 (en) * 1999-09-13 2002-10-08 Intel Corporation Method of constructing an electronic assembly having an indium thermal couple and an electronic assembly having an indium thermal couple
US6330157B1 (en) * 1999-12-21 2001-12-11 International Business Machines Corporation Variable thermal exchanger and method thereof
US6396700B1 (en) * 2000-06-29 2002-05-28 International Business Machines Corporation Thermal spreader and interface assembly for heat generating component of an electronic device
US6724078B1 (en) 2000-08-31 2004-04-20 Intel Corporation Electronic assembly comprising solderable thermal interface
US6586279B1 (en) * 2000-11-17 2003-07-01 Sun Microsystems, Inc. Method of integrating a heat spreader and a semiconductor, and package formed thereby
US6601753B2 (en) * 2001-05-17 2003-08-05 Visteon Global Technologies, Inc. Void-free die attachment method with low melting metal
US6504242B1 (en) 2001-11-15 2003-01-07 Intel Corporation Electronic assembly having a wetting layer on a thermally conductive heat spreader
US7436058B2 (en) * 2002-05-09 2008-10-14 Intel Corporation Reactive solder material
WO2004075291A1 (fr) * 2003-02-24 2004-09-02 Fujitsu Limited Composant electronique et element rayonnant et procede de fabrication d'un dispositif semi-conducteur au moyen du composant et de l'element
US7132746B2 (en) * 2003-08-18 2006-11-07 Delphi Technologies, Inc. Electronic assembly with solder-bonded heat sink
US7133286B2 (en) * 2004-05-10 2006-11-07 International Business Machines Corporation Method and apparatus for sealing a liquid cooled electronic device
JP2007005670A (ja) * 2005-06-27 2007-01-11 Fujitsu Ltd 電子部品パッケージおよび接合組立体
US8733620B2 (en) * 2005-12-08 2014-05-27 Intel Corporation Solder deposition and thermal processing of thin-die thermal interface material
US7513035B2 (en) * 2006-06-07 2009-04-07 Advanced Micro Devices, Inc. Method of integrated circuit packaging
US20080124840A1 (en) * 2006-07-31 2008-05-29 Su Michael Z Electrical Insulating Layer for Metallic Thermal Interface Material
US7982307B2 (en) * 2006-11-22 2011-07-19 Agere Systems Inc. Integrated circuit chip assembly having array of thermally conductive features arranged in aperture of circuit substrate
US7834442B2 (en) * 2007-12-12 2010-11-16 International Business Machines Corporation Electronic package method and structure with cure-melt hierarchy
JP5447175B2 (ja) * 2010-05-17 2014-03-19 富士通セミコンダクター株式会社 半導体装置
US20120032350A1 (en) * 2010-08-06 2012-02-09 Conexant Systems, Inc. Systems and Methods for Heat Dissipation Using Thermal Conduits
US8647974B2 (en) 2011-03-25 2014-02-11 Ati Technologies Ulc Method of fabricating a semiconductor chip with supportive terminal pad
US9142520B2 (en) * 2011-08-30 2015-09-22 Ati Technologies Ulc Methods of fabricating semiconductor chip solder structures
US20130224510A1 (en) * 2012-02-29 2013-08-29 General Electric Company System including thermal interface material
EP2836767B1 (fr) * 2012-04-11 2020-04-01 Theodore Valerio Puits thermique formé d'ailettes empilées intercalées avec des plaques souples déformables
US9826662B2 (en) 2013-12-12 2017-11-21 General Electric Company Reusable phase-change thermal interface structures

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034469A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method of making conduction-cooled circuit package

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2776920A (en) * 1952-11-05 1957-01-08 Gen Electric Germanium-zinc alloy semi-conductors
US2903629A (en) * 1958-10-23 1959-09-08 Advanced Res Associates Inc Encapsulated semiconductor assembly
GB914832A (en) * 1959-12-11 1963-01-09 Gen Electric Improvements in semiconductor devices and method of fabricating the same
US3267341A (en) * 1962-02-09 1966-08-16 Hughes Aircraft Co Double container arrangement for transistors
GB1030540A (en) * 1964-01-02 1966-05-25 Gen Electric Improvements in and relating to semi-conductor diodes
US3430335A (en) * 1965-06-08 1969-03-04 Hughes Aircraft Co Method of treating semiconductor devices or components
US3429040A (en) * 1965-06-18 1969-02-25 Ibm Method of joining a component to a substrate
US3414775A (en) * 1967-03-03 1968-12-03 Ibm Heat dissipating module assembly and method
US3504096A (en) * 1968-01-31 1970-03-31 Westinghouse Electric Corp Semiconductor device and method
CA892844A (en) * 1970-08-14 1972-02-08 H. Hantusch Gerald Semiconductor heat sink
US3741292A (en) * 1971-06-30 1973-06-26 Ibm Liquid encapsulated air cooled module
US3868725A (en) * 1971-10-14 1975-02-25 Philips Corp Integrated circuit lead structure
US3972062A (en) * 1973-10-04 1976-07-27 Motorola, Inc. Mounting assemblies for a plurality of transistor integrated circuit chips
US3993123A (en) * 1975-10-28 1976-11-23 International Business Machines Corporation Gas encapsulated cooling module

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034469A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method of making conduction-cooled circuit package

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GB1569453A (en) 1980-06-18
US4034469A (en) 1977-07-12
FR2363892B1 (fr) 1979-03-02
JPS5331968A (en) 1978-03-25
AR219299A1 (es) 1980-08-15
US4081825A (en) 1978-03-28
CA1093699A (fr) 1981-01-13
BE857399A (fr) 1977-12-01
IT1114116B (it) 1986-01-27
JPS5928989B2 (ja) 1984-07-17
SE7709310L (sv) 1978-03-04
SE435126B (sv) 1984-09-03

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