FR2356932A1 - Detecteur d'humidite et son procede de fabrication - Google Patents

Detecteur d'humidite et son procede de fabrication

Info

Publication number
FR2356932A1
FR2356932A1 FR7717612A FR7717612A FR2356932A1 FR 2356932 A1 FR2356932 A1 FR 2356932A1 FR 7717612 A FR7717612 A FR 7717612A FR 7717612 A FR7717612 A FR 7717612A FR 2356932 A1 FR2356932 A1 FR 2356932A1
Authority
FR
France
Prior art keywords
region
manufacturing process
humidity detector
electrodes
comb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7717612A
Other languages
English (en)
Other versions
FR2356932B1 (fr
Inventor
Paul J Burkhardt
Michael R Poponiak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2356932A1 publication Critical patent/FR2356932A1/fr
Application granted granted Critical
Publication of FR2356932B1 publication Critical patent/FR2356932B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

Détecteur d'humidité et son procédé de fabrication. Un substrat semi-conducteur 10 est muni d'une région de bioxyde de silicium poreux 14. Sur cette région on forme une configuration d'électrodes métalliques 18, 20 en forme de peigne. L'humidité ambiante diffuse dans ladite région où elle est absorbée, elle modifie certains paramètres électriques (résistance, capacité), ces variations mesurables sont détectées à partir desdites électrodes. Application à la fabrication de dispositifs semi-conducteurs intégrés notamment capteurs d'humidité.
FR7717612A 1976-07-02 1977-06-02 Detecteur d'humidite et son procede de fabrication Granted FR2356932A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/701,788 US4057823A (en) 1976-07-02 1976-07-02 Porous silicon dioxide moisture sensor and method for manufacture of a moisture sensor

Publications (2)

Publication Number Publication Date
FR2356932A1 true FR2356932A1 (fr) 1978-01-27
FR2356932B1 FR2356932B1 (fr) 1980-02-08

Family

ID=24818683

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7717612A Granted FR2356932A1 (fr) 1976-07-02 1977-06-02 Detecteur d'humidite et son procede de fabrication

Country Status (5)

Country Link
US (2) US4057823A (fr)
JP (1) JPS535695A (fr)
DE (1) DE2729249A1 (fr)
FR (1) FR2356932A1 (fr)
GB (1) GB1535902A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0076935A2 (fr) * 1981-10-09 1983-04-20 Honeywell Inc. Dispositif semiconducteur intégré et son procédé de fabrication
EP0057728B1 (fr) * 1980-07-21 1986-05-28 Hitachi, Ltd. Element sensible a l'humidite, materiau sensible a l'humidite et leur procede de fabrication
FR2685963A1 (fr) * 1991-12-20 1993-07-09 Coed Sa Dispositif de mesure de l'humidite relative d'equilibre d'un produit, notamment d'un produit alimentaire.
FR2720161A1 (fr) * 1994-05-20 1995-11-24 Isen Rech Procédé de fabrication d'un capteur de mesure de vapeur, capteur de mesure obtenu par le procédé et procédé d'utilisation de ce capteur.
WO2007057794A1 (fr) * 2005-11-17 2007-05-24 Nxp B.V. Capteur d'humidite

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US4131910A (en) * 1977-11-09 1978-12-26 Bell Telephone Laboratories, Incorporated High voltage semiconductor devices
US4264382A (en) * 1978-05-25 1981-04-28 International Business Machines Corporation Method for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regions
US4214315A (en) * 1979-03-16 1980-07-22 International Business Machines Corporation Method for fabricating vertical NPN and PNP structures and the resulting product
US4272986A (en) * 1979-04-16 1981-06-16 Harris Corporation Method and means for measuring moisture content of hermetic semiconductor devices
DE3138765C2 (de) * 1981-09-25 1983-11-17 Hans Renens Vaud Meyer Verfahren zur Herstellung eines Maßstabes
US4380865A (en) * 1981-11-13 1983-04-26 Bell Telephone Laboratories, Incorporated Method of forming dielectrically isolated silicon semiconductor materials utilizing porous silicon formation
DE3375557D1 (en) * 1982-10-05 1988-03-10 Fibre Containers Manufacture of corrugated fibreboard
DE3311788A1 (de) * 1983-03-31 1984-10-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Ionensensitive elektrode
US4646002A (en) * 1984-05-10 1987-02-24 Regents Of The University Of Minnesota Circuit for high impedance broad band probe
US4574469A (en) * 1984-09-14 1986-03-11 Motorola, Inc. Process for self-aligned buried layer, channel-stop, and isolation
CS253788B1 (en) * 1985-08-13 1987-12-17 Ivan Emmer Method for electric moisture-content sensor production
US4728882A (en) * 1986-04-01 1988-03-01 The Johns Hopkins University Capacitive chemical sensor for detecting certain analytes, including hydrocarbons in a liquid medium
JPS63204134A (ja) * 1987-02-19 1988-08-23 Toyo Eng Works Ltd 自走車の可塩害テスト環境試験室
US5225374A (en) * 1988-05-13 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating a receptor-based sensor
US5111221A (en) * 1988-05-13 1992-05-05 United States Of America As Represented By The Secretary Of The Navy Receptor-based sensor
GB2220074B (en) * 1988-06-27 1992-01-08 Seiko Epson Corp Humidity sensor
US5057430A (en) * 1988-09-15 1991-10-15 Biotronic Systems Corporation Biochemical sensor responsive to bubbles
DE3923595C1 (fr) * 1989-07-17 1990-12-20 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
JPH0750705Y2 (ja) * 1989-09-20 1995-11-15 株式会社リケン ガスセンサ
US5138411A (en) * 1991-05-06 1992-08-11 Micron Technology, Inc. Anodized polysilicon layer lower capacitor plate of a dram to increase capacitance
US5430300A (en) * 1991-07-18 1995-07-04 The Texas A&M University System Oxidized porous silicon field emission devices
JPH05160342A (ja) * 1991-12-02 1993-06-25 Canon Inc 半導体装置及びその製造方法
GB2262186A (en) * 1991-12-04 1993-06-09 Philips Electronic Associated A capacitive structure for a semiconductor device
US5508542A (en) * 1994-10-28 1996-04-16 International Business Machines Corporation Porous silicon trench and capacitor structures
FR2779006B1 (fr) * 1998-05-19 2003-01-24 St Microelectronics Sa Procede de formation de silicium poreux dans un substrat de silicium, en particulier pour l'amelioration des performances d'un circuit inductif
US6461528B1 (en) * 1999-10-29 2002-10-08 California Institute Of Technology Method of fabricating lateral nanopores, directed pore growth and pore interconnects and filter devices using the same
DE10101376A1 (de) * 2001-01-13 2002-07-18 Forschungszentrum Juelich Gmbh Metallionensensor
JP2002243689A (ja) * 2001-02-15 2002-08-28 Denso Corp 容量式湿度センサおよびその製造方法
US6580600B2 (en) 2001-02-20 2003-06-17 Nippon Soken, Inc. Capacitance type humidity sensor and manufacturing method of the same
JP4501320B2 (ja) * 2001-07-16 2010-07-14 株式会社デンソー 容量式湿度センサ
DE10134938A1 (de) * 2001-07-18 2003-02-06 Bosch Gmbh Robert Halbleiterbauelement sowie ein Verfahren zur Herstellung des Halbleiterbauelements
TW573119B (en) * 2002-08-28 2004-01-21 Nanya Technology Corp A moisture detecting method, a moisture detecting device and method of fabricating the same
US6865940B2 (en) * 2003-06-25 2005-03-15 General Electric Company Aluminum oxide moisture sensor and related method
US8357958B2 (en) * 2004-04-02 2013-01-22 Silicon Laboratories Inc. Integrated CMOS porous sensor
CN102854229A (zh) * 2004-04-02 2013-01-02 硅实验室公司 集成电子传感器
WO2007036922A1 (fr) * 2005-09-30 2007-04-05 Timothy Cummins Capteur electronique integre
US7181966B2 (en) * 2004-09-08 2007-02-27 Nippon Soken, Inc. Physical quantity sensor and method for manufacturing the same
JP2006078280A (ja) * 2004-09-08 2006-03-23 Denso Corp 容量式湿度センサ
JP2006084232A (ja) * 2004-09-14 2006-03-30 Denso Corp 容量式湿度センサ
US20060243379A1 (en) * 2005-04-29 2006-11-02 E-Beam & Light, Inc. Method and apparatus for lamination by electron beam irradiation
US7422020B2 (en) * 2006-06-30 2008-09-09 Intel Corporation Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric
WO2008082362A1 (fr) * 2006-12-28 2008-07-10 Agency For Science, Technology And Research Dispositif encapsulé avec capteur de la perméation de gaz intégré
US20080191716A1 (en) * 2007-02-08 2008-08-14 International Business Machines Corporation On-Chip Real-Time Moisture Sensor For and Method of Detecting Moisture Ingress in an Integrated Circuit Chip
US7683636B2 (en) * 2007-10-26 2010-03-23 Honeywell International Inc. Structure for capacitive balancing of integrated relative humidity sensor
US7571637B2 (en) * 2007-10-29 2009-08-11 International Business Machines Corporation Design structure for an on-chip real-time moisture sensor for and method of detecting moisture ingress in an integrated circuit chip
US8124953B2 (en) 2009-03-12 2012-02-28 Infineon Technologies Ag Sensor device having a porous structure element
EP2282333B1 (fr) 2009-07-27 2013-03-20 Nxp B.V. Circuit intégré avec capteur d'humidité
EP2336757B1 (fr) 2009-12-07 2018-09-19 ams international AG Circuit intégré avec ensemble de détection de présence d'eau et son procédé de fabrication
EP2336756A1 (fr) 2009-12-15 2011-06-22 Nxp B.V. Capteur d'immersion de liquide
EP2420826A1 (fr) 2010-08-17 2012-02-22 Nxp B.V. Circuit intégré et son procédé de fabrication
EP2492239B1 (fr) 2011-02-22 2020-08-26 Sciosense B.V. Circuit intégré avec capteur et procédé de fabrication d'un tel circuit intégré
US9086368B2 (en) * 2011-02-24 2015-07-21 International Business Machines Corporation Non-destructive determination of the moisture content in an electronic circuit board using comparison of capacitance measurements acquired from test coupons, and design structure/process therefor
EP2527824B1 (fr) 2011-05-27 2016-05-04 ams international AG Circuit intégré avec capteur d'humidité et procédé de fabrication d'un tel circuit intégré
US8852513B1 (en) 2011-09-30 2014-10-07 Silicon Laboratories Inc. Systems and methods for packaging integrated circuit gas sensor systems
US9164052B1 (en) 2011-09-30 2015-10-20 Silicon Laboratories Inc. Integrated gas sensor
US8691609B1 (en) 2011-09-30 2014-04-08 Silicon Laboratories Inc. Gas sensor materials and methods for preparation thereof
US8669131B1 (en) 2011-09-30 2014-03-11 Silicon Laboratories Inc. Methods and materials for forming gas sensor structures
US8739623B2 (en) 2012-03-09 2014-06-03 The University Of Kentucky Research Foundation Moisture sensors on conductive substrates
US8836110B2 (en) * 2012-08-31 2014-09-16 Freescale Semiconductor, Inc. Heat spreader for use within a packaged semiconductor device
EP3259581B1 (fr) 2015-02-17 2020-01-29 Honeywell International Inc. Capteur d'humidité et procédé de fabrication du capteur
EP3244201B1 (fr) 2016-05-13 2021-10-27 Honeywell International Inc. Capteur d'humidité à base de tec avec couche barrière protégeant le diélectrique de grille
CN108362199A (zh) 2017-01-26 2018-08-03 华邦电子股份有限公司 应变感测装置及其制造方法
TWI616649B (zh) * 2017-01-26 2018-03-01 華邦電子股份有限公司 應變感測裝置及其製造方法
IL299272A (en) 2020-07-02 2023-02-01 Illumina Inc Devices with field effect transistors

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US3835530A (en) * 1967-06-05 1974-09-17 Texas Instruments Inc Method of making semiconductor devices
US3539917A (en) * 1968-04-24 1970-11-10 Panametrics Method of measuring the water content of liquid hydrocarbons
US3943557A (en) * 1974-02-19 1976-03-09 Plessey Incorporated Semiconductor package with integral hermeticity detector
US3919060A (en) * 1974-06-14 1975-11-11 Ibm Method of fabricating semiconductor device embodying dielectric isolation
US3961353A (en) * 1974-10-21 1976-06-01 International Business Machines Corporation High power semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0057728B1 (fr) * 1980-07-21 1986-05-28 Hitachi, Ltd. Element sensible a l'humidite, materiau sensible a l'humidite et leur procede de fabrication
EP0076935A2 (fr) * 1981-10-09 1983-04-20 Honeywell Inc. Dispositif semiconducteur intégré et son procédé de fabrication
EP0076935A3 (en) * 1981-10-09 1985-08-07 Honeywell Inc. Integrated semiconductor device and method of fabricating said device
FR2685963A1 (fr) * 1991-12-20 1993-07-09 Coed Sa Dispositif de mesure de l'humidite relative d'equilibre d'un produit, notamment d'un produit alimentaire.
EP0558862A1 (fr) * 1991-12-20 1993-09-08 Coed S.A. Procédé et dispositif de mesure de l'humidité relative d'équilibre d'un produit
FR2720161A1 (fr) * 1994-05-20 1995-11-24 Isen Rech Procédé de fabrication d'un capteur de mesure de vapeur, capteur de mesure obtenu par le procédé et procédé d'utilisation de ce capteur.
WO2007057794A1 (fr) * 2005-11-17 2007-05-24 Nxp B.V. Capteur d'humidite
US8079248B2 (en) 2005-11-17 2011-12-20 Nxp B.V. Moisture sensor

Also Published As

Publication number Publication date
JPS535695A (en) 1978-01-19
US4144636A (en) 1979-03-20
US4057823A (en) 1977-11-08
GB1535902A (en) 1978-12-13
DE2729249A1 (de) 1978-02-09
FR2356932B1 (fr) 1980-02-08

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