FR2293795B1 - - Google Patents
Info
- Publication number
- FR2293795B1 FR2293795B1 FR7533870A FR7533870A FR2293795B1 FR 2293795 B1 FR2293795 B1 FR 2293795B1 FR 7533870 A FR7533870 A FR 7533870A FR 7533870 A FR7533870 A FR 7533870A FR 2293795 B1 FR2293795 B1 FR 2293795B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Non-Volatile Memory (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53024974A | 1974-12-06 | 1974-12-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2293795A1 FR2293795A1 (fr) | 1976-07-02 |
FR2293795B1 true FR2293795B1 (US20090163788A1-20090625-C00002.png) | 1978-05-12 |
Family
ID=24112972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7533870A Granted FR2293795A1 (fr) | 1974-12-06 | 1975-10-29 | Procede de fabrication de transistors a effet de champ perfectionnes |
Country Status (9)
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS559477A (en) * | 1978-07-06 | 1980-01-23 | Nec Corp | Method of making semiconductor device |
JPS5646561A (en) * | 1979-09-26 | 1981-04-27 | Nec Corp | Semiconductor device |
JPS5685867A (en) * | 1979-12-14 | 1981-07-13 | Nec Corp | Field effect semiconductor device |
JPS57155771A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH0646662B2 (ja) * | 1983-12-26 | 1994-06-15 | 株式会社日立製作所 | 半導体装置 |
JPS6114765A (ja) * | 1984-06-29 | 1986-01-22 | Shindengen Electric Mfg Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
JPS60121771A (ja) * | 1984-11-09 | 1985-06-29 | Hitachi Ltd | 半導体装置 |
JPS61170065A (ja) * | 1985-01-23 | 1986-07-31 | Fuji Electric Co Ltd | 絶縁ゲ−ト型電界効果トランジスタ |
JPS61105872A (ja) * | 1985-10-04 | 1986-05-23 | Hitachi Ltd | 半導体装置 |
US4786955A (en) * | 1987-02-24 | 1988-11-22 | General Electric Company | Semiconductor device with source and drain depth extenders and a method of making the same |
DE3818533C2 (de) * | 1987-06-01 | 1994-05-26 | Mitsubishi Electric Corp | Feldeffekttransistor |
JPH0294477A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体装置及びその製造方法 |
DE19706282A1 (de) * | 1997-02-18 | 1998-08-20 | Siemens Ag | Verfahren zur Erzeugung einer Transistorstruktur |
JP4541582B2 (ja) * | 2001-03-28 | 2010-09-08 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49105490A (US20090163788A1-20090625-C00002.png) * | 1973-02-07 | 1974-10-05 |
-
1975
- 1975-10-14 DE DE2545871A patent/DE2545871B2/de active Granted
- 1975-10-24 JP JP50127537A patent/JPS5168776A/ja active Pending
- 1975-10-27 CH CH1387275A patent/CH591764A5/xx not_active IP Right Cessation
- 1975-10-29 FR FR7533870A patent/FR2293795A1/fr active Granted
- 1975-11-05 BE BE161620A patent/BE835288A/xx unknown
- 1975-11-18 ES ES442755A patent/ES442755A1/es not_active Expired
- 1975-11-28 NL NL7513901A patent/NL7513901A/xx not_active Application Discontinuation
- 1975-12-02 SE SE7513554A patent/SE7513554L/xx unknown
- 1975-12-08 BR BR7508781*A patent/BR7508781A/pt unknown
Also Published As
Publication number | Publication date |
---|---|
BR7508781A (pt) | 1976-08-24 |
BE835288A (fr) | 1976-03-01 |
ES442755A1 (es) | 1977-04-01 |
DE2545871A1 (de) | 1976-06-10 |
SE7513554L (sv) | 1976-06-08 |
NL7513901A (nl) | 1976-06-09 |
DE2545871C3 (US20090163788A1-20090625-C00002.png) | 1983-03-03 |
FR2293795A1 (fr) | 1976-07-02 |
DE2545871B2 (de) | 1980-06-19 |
CH591764A5 (US20090163788A1-20090625-C00002.png) | 1977-09-30 |
JPS5168776A (en) | 1976-06-14 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |