FR2152633A1 - - Google Patents

Info

Publication number
FR2152633A1
FR2152633A1 FR7231413A FR7231413A FR2152633A1 FR 2152633 A1 FR2152633 A1 FR 2152633A1 FR 7231413 A FR7231413 A FR 7231413A FR 7231413 A FR7231413 A FR 7231413A FR 2152633 A1 FR2152633 A1 FR 2152633A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7231413A
Other languages
French (fr)
Other versions
FR2152633B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telic Corp
Original Assignee
Telic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telic Corp filed Critical Telic Corp
Publication of FR2152633A1 publication Critical patent/FR2152633A1/fr
Application granted granted Critical
Publication of FR2152633B1 publication Critical patent/FR2152633B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
FR7231413A 1971-09-07 1972-09-05 Expired FR2152633B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US178240A US3884793A (en) 1971-09-07 1971-09-07 Electrode type glow discharge apparatus
US25450472A 1972-05-18 1972-05-18

Publications (2)

Publication Number Publication Date
FR2152633A1 true FR2152633A1 (enrdf_load_stackoverflow) 1973-04-27
FR2152633B1 FR2152633B1 (enrdf_load_stackoverflow) 1978-06-02

Family

ID=26874127

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7231413A Expired FR2152633B1 (enrdf_load_stackoverflow) 1971-09-07 1972-09-05
FR7311995A Expired FR2168124B1 (enrdf_load_stackoverflow) 1971-09-07 1973-04-03

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR7311995A Expired FR2168124B1 (enrdf_load_stackoverflow) 1971-09-07 1973-04-03

Country Status (8)

Country Link
US (1) US3884793A (enrdf_load_stackoverflow)
CA (1) CA1006116A (enrdf_load_stackoverflow)
CH (1) CH589940A5 (enrdf_load_stackoverflow)
DE (3) DE2243708A1 (enrdf_load_stackoverflow)
FR (2) FR2152633B1 (enrdf_load_stackoverflow)
GB (2) GB1420061A (enrdf_load_stackoverflow)
IL (1) IL40285A (enrdf_load_stackoverflow)
NL (1) NL7211911A (enrdf_load_stackoverflow)

Families Citing this family (80)

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US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
JPS51117933A (en) * 1975-04-10 1976-10-16 Tokuda Seisakusho Spattering apparatus
FR2324755A1 (fr) * 1975-09-19 1977-04-15 Anvar Dispositif de pulverisation cathodique de grande vitesse de depot
US4046660A (en) * 1975-12-29 1977-09-06 Bell Telephone Laboratories, Incorporated Sputter coating with charged particle flux control
NL7607473A (nl) * 1976-07-07 1978-01-10 Philips Nv Verstuifinrichting en werkwijze voor het ver- stuiven met een dergelijke inrichting.
US4179351A (en) * 1976-09-09 1979-12-18 Hewlett-Packard Company Cylindrical magnetron sputtering source
DE2655942A1 (de) * 1976-12-10 1978-06-15 Tokuda Seisakusho Kawasaki Kk Zerstaeubungsvorrichtung
US4126530A (en) * 1977-08-04 1978-11-21 Telic Corporation Method and apparatus for sputter cleaning and bias sputtering
JPS54137642A (en) * 1978-04-12 1979-10-25 Battelle Memorial Institute Electrode for reversible fuel cell* and method of and apparatus for producing same
GB2028377B (en) * 1978-08-21 1982-12-08 Vac Tec Syst Magnetically-enhanced sputtering device
DE3070700D1 (en) * 1980-08-08 1985-07-04 Battelle Development Corp Cylindrical magnetron sputtering cathode
EP0046154B1 (en) * 1980-08-08 1984-11-28 Battelle Development Corporation Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus
US4290877A (en) * 1980-09-08 1981-09-22 The United States Of America As Represented By The Secretary Of The Interior Sputtering apparatus for coating elongated tubes and strips
DE3107914A1 (de) * 1981-03-02 1982-09-16 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung
CH649578A5 (de) * 1981-03-27 1985-05-31 Ulvac Corp Hochgeschwindigkeits-kathoden-zerstaeubungsvorrichtung.
US4525264A (en) * 1981-12-07 1985-06-25 Ford Motor Company Cylindrical post magnetron sputtering system
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus
US4376025A (en) * 1982-06-14 1983-03-08 Battelle Development Corporation Cylindrical cathode for magnetically-enhanced sputtering
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
JPS60221563A (ja) * 1984-04-17 1985-11-06 Ulvac Corp バイアススパッタ方法
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
DE3427587A1 (de) * 1984-07-26 1986-02-06 Leybold-Heraeus GmbH, 5000 Köln Zerstaeubungseinrichtung fuer katodenzerstaeubungsanlagen
DE3442208C3 (de) * 1984-11-19 1998-06-10 Leybold Ag Verfahren und Vorrichtung zum Herstellen harter Kohlenstoffschichten
US4711767A (en) * 1985-02-05 1987-12-08 Psi Star Plasma reactor with voltage transformer
US4600563A (en) * 1985-02-05 1986-07-15 Psi Star Incorporated Plasma reactor with voltage transformer
DE3527626A1 (de) * 1985-08-01 1987-02-05 Leybold Heraeus Gmbh & Co Kg Zerstaeubungskatode nach dem magnetronprinzip
US4668338A (en) * 1985-12-30 1987-05-26 Applied Materials, Inc. Magnetron-enhanced plasma etching process
DE3636524A1 (de) * 1986-10-27 1988-04-28 Vtu Angel Kancev Einrichtung zum auftragen von ueberzuegen im vakuum durch magnetronzerstaeubung
DE3727901A1 (de) * 1987-08-21 1989-03-02 Leybold Ag Zerstaeubungskathode nach dem magnetronprinzip
BE1001027A3 (nl) * 1987-10-21 1989-06-13 Bekaert Sa Nv Werkwijze en inrichting voor het reinigen van een langwerpig metalen substraat, zoals een draad, een band, een koord, enz., alsmede volgens die werkwijze gereinigde substraten en met dergelijke substraten versterkte voorwerpen uit polymeermateriaal.
JP2673807B2 (ja) * 1987-10-30 1997-11-05 パイオニア株式会社 光磁気記録媒体の製造方法
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
US4810347A (en) * 1988-03-21 1989-03-07 Eaton Corporation Penning type cathode for sputter coating
DE3844064A1 (de) * 1988-12-28 1990-07-05 Leybold Ag Katodenzerstaeubungsvorrichtung nach dem magnetron-prinzip mit einer hohlkatode und einem zylindrischen target
US4927515A (en) * 1989-01-09 1990-05-22 The Board Of Trustees Of The Leland Stanford Junior University Circular magnetron sputtering device
DE3908252C2 (de) * 1989-03-14 1996-06-20 Leybold Ag Zerstäubungskathode nach dem Magnetron-Prinzip
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
US5178743A (en) * 1989-06-15 1993-01-12 Microelectronics And Computer Technology Corporation Cylindrical magnetron sputtering system
DE4018914C1 (enrdf_load_stackoverflow) * 1990-06-13 1991-06-06 Leybold Ag, 6450 Hanau, De
US5437778A (en) * 1990-07-10 1995-08-01 Telic Technologies Corporation Slotted cylindrical hollow cathode/magnetron sputtering device
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
DE4100291C1 (enrdf_load_stackoverflow) * 1991-01-08 1991-10-02 Leybold Ag, 6450 Hanau, De
AU664995B2 (en) * 1991-04-19 1995-12-14 Surface Solutions, Incorporated Method and apparatus for linear magnetron sputtering
GB2256085A (en) * 1991-05-13 1992-11-25 Integrated Plasma Ltd Plasma deposition and etching of substrates.
US5228963A (en) * 1991-07-01 1993-07-20 Himont Incorporated Hollow-cathode magnetron and method of making thin films
DE4135939A1 (de) * 1991-10-31 1993-05-06 Leybold Ag, 6450 Hanau, De Zerstaeubungskathode
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
DE4138793C2 (de) * 1991-11-26 2001-03-01 Leybold Ag Verfahren und Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
US5685961A (en) * 1992-03-27 1997-11-11 P & D Medical Coatings, Inc. Method for fabrication of metallized medical devices
DE4333825C1 (de) * 1993-09-28 1995-02-23 Mat Gmbh Vorrichtung zum Beschichten von langgestreckten biegsamen Erzeugnissen
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6235170B1 (en) 1998-06-10 2001-05-22 David A. Glocker Conical sputtering target
US6432286B1 (en) 1998-06-10 2002-08-13 David A. Glocker Conical sputtering target
US6066242A (en) * 1998-06-10 2000-05-23 David A. Glocker Conical sputtering target
US6352430B1 (en) 1998-10-23 2002-03-05 Goodrich Corporation Method and apparatus for cooling a CVI/CVD furnace
US6440220B1 (en) * 1998-10-23 2002-08-27 Goodrich Corporation Method and apparatus for inhibiting infiltration of a reactive gas into porous refractory insulation
US6162298A (en) * 1998-10-28 2000-12-19 The B. F. Goodrich Company Sealed reactant gas inlet for a CVI/CVD furnace
US6193853B1 (en) 1999-02-25 2001-02-27 Cametoid Limited Magnetron sputtering method and apparatus
DE60013208T2 (de) 1999-06-04 2005-08-11 Goodrich Corp. Suzeptordeckel sowohl für Gasphaseninfiltration bzw. -Beschichtung als auch Wärmebehandlung
DE60005888T2 (de) 1999-06-04 2004-07-29 Goodrich Corp. Verfahren und Vorrichtung zur Druckmessung in einer CVD/CVI-Kammer
EP1063319B1 (en) 1999-06-04 2005-12-07 Goodrich Corporation Method and apparatus for cooling a CVI/CVD furnace
TW584905B (en) 2000-02-25 2004-04-21 Tokyo Electron Ltd Method and apparatus for depositing films
US6497803B2 (en) 2000-05-31 2002-12-24 Isoflux, Inc. Unbalanced plasma generating apparatus having cylindrical symmetry
US6551477B2 (en) 2000-09-25 2003-04-22 Isoflux, Inc. Interlocking cylindrical magnetron cathodes and targets
US6887356B2 (en) * 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
US6759807B2 (en) 2002-04-04 2004-07-06 Veeco Instruments, Inc. Multi-grid ion beam source for generating a highly collimated ion beam
AT414215B (de) * 2003-02-12 2006-10-15 Peter Ziger Anlage zur plasmaprozessierung
US20050288773A1 (en) * 2004-01-22 2005-12-29 Glocker David A Radiopaque coating for biomedical devices
WO2006004645A2 (en) * 2004-06-28 2006-01-12 Isoflux, Inc. Porous coatings for biomedical implants
DE102007049735B4 (de) * 2006-10-17 2012-03-29 Von Ardenne Anlagentechnik Gmbh Versorgungsendblock für ein Rohrmagnetron
BE1017817A7 (fr) * 2006-10-17 2009-08-04 Ardenne Anlagentech Gmbh Bloc terminal d'alimentation pour un magnetron tubulaire.
JP5467735B2 (ja) * 2007-07-02 2014-04-09 東ソー株式会社 円筒形スパッタリングターゲット
DE102008052217B3 (de) * 2008-10-17 2011-03-10 Johann Wolfgang Goethe-Universität Elektrostatischer Ionenkompressor
US20140061039A1 (en) * 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems
US20160298237A1 (en) * 2013-11-22 2016-10-13 Toray Industries, Inc. Plasma electrode, plasma processing electrode, cvd electrode, plasma cvd device, and method for manufacturing substrate with thin film
CA3063389C (en) 2019-12-02 2021-03-30 2S Water Incorporated Solution electrode glow discharge apparatus
CA3068769A1 (en) 2020-01-20 2021-07-20 2S Water Incorporated Liquid electrode tip
CN116057200B (zh) * 2020-09-16 2024-09-10 株式会社爱发科 旋转式阴极单元用驱动块

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3282815A (en) * 1963-07-01 1966-11-01 Ibm Magnetic control of film deposition
US3282816A (en) * 1963-09-16 1966-11-01 Ibm Process of cathode sputtering from a cylindrical cathode
US3369991A (en) * 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode
US3507774A (en) * 1967-06-02 1970-04-21 Nat Res Corp Low energy sputtering apparatus for operation below one micron pressure

Also Published As

Publication number Publication date
DE2243708A1 (de) 1973-04-26
DE2264437A1 (de) 1973-10-31
IL40285A0 (en) 1972-11-28
IL40285A (en) 1976-01-30
FR2168124B1 (enrdf_load_stackoverflow) 1976-12-03
GB1420062A (en) 1976-01-07
DE2264436A1 (de) 1973-12-20
GB1420061A (en) 1976-01-07
CH589940A5 (enrdf_load_stackoverflow) 1977-07-29
CA1006116A (en) 1977-03-01
NL7211911A (enrdf_load_stackoverflow) 1973-03-09
FR2152633B1 (enrdf_load_stackoverflow) 1978-06-02
US3884793A (en) 1975-05-20
FR2168124A1 (enrdf_load_stackoverflow) 1973-08-24

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Legal Events

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TP Transmission of property
ST Notification of lapse