FI981245A0 - Resonatorstrukturer - Google Patents
ResonatorstrukturerInfo
- Publication number
- FI981245A0 FI981245A0 FI981245A FI981245A FI981245A0 FI 981245 A0 FI981245 A0 FI 981245A0 FI 981245 A FI981245 A FI 981245A FI 981245 A FI981245 A FI 981245A FI 981245 A0 FI981245 A0 FI 981245A0
- Authority
- FI
- Finland
- Prior art keywords
- resonator structures
- resonator
- structures
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
- H03H9/585—Stacked Crystal Filters [SCF]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
- H01P1/127—Strip line switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/545—Filters comprising resonators of piezo-electric or electrostrictive material including active elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
- H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
- H01H1/20—Bridging contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
- H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI981245A FI106894B (sv) | 1998-06-02 | 1998-06-02 | Resonatorstrukturer |
FI981415A FI108583B (sv) | 1998-06-02 | 1998-06-18 | Resonatorstrukturer |
US09/321,339 US6242843B1 (en) | 1998-06-02 | 1999-05-27 | Resonator structures |
US09/321,058 US6204737B1 (en) | 1998-06-02 | 1999-05-27 | Piezoelectric resonator structures with a bending element performing a voltage controlled switching function |
EP99304281A EP0963000B1 (en) | 1998-06-02 | 1999-06-02 | Resonator structures |
EP99304277A EP0962999A3 (en) | 1998-06-02 | 1999-06-02 | Resonator structures |
JP11154477A JP2000030594A (ja) | 1998-06-02 | 1999-06-02 | 共振器の構造 |
JP11154478A JP2000030595A (ja) | 1998-06-02 | 1999-06-02 | 共振器の構造 |
DE69927551T DE69927551T2 (de) | 1998-06-02 | 1999-06-02 | Resonatorstrukturen |
CN99106966A CN1127168C (zh) | 1998-06-02 | 1999-06-02 | 谐振器单元 |
EP08004288A EP1936733B1 (en) | 1998-06-02 | 1999-06-02 | Resonator structures |
CN99106965A CN1130790C (zh) | 1998-06-02 | 1999-06-02 | 谐振器结构 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI981245 | 1998-06-02 | ||
FI981245A FI106894B (sv) | 1998-06-02 | 1998-06-02 | Resonatorstrukturer |
Publications (3)
Publication Number | Publication Date |
---|---|
FI981245A0 true FI981245A0 (sv) | 1998-06-02 |
FI981245A FI981245A (sv) | 1999-12-03 |
FI106894B FI106894B (sv) | 2001-04-30 |
Family
ID=8551881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI981245A FI106894B (sv) | 1998-06-02 | 1998-06-02 | Resonatorstrukturer |
Country Status (5)
Country | Link |
---|---|
US (1) | US6242843B1 (sv) |
EP (2) | EP0962999A3 (sv) |
JP (1) | JP2000030594A (sv) |
CN (1) | CN1130790C (sv) |
FI (1) | FI106894B (sv) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111384923A (zh) * | 2020-04-09 | 2020-07-07 | 中国电子科技集团公司第二十六研究所 | 一种小型化格型晶体滤波器 |
Families Citing this family (73)
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---|---|---|---|---|
FI108583B (sv) * | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonatorstrukturer |
JP2000209063A (ja) * | 1998-11-12 | 2000-07-28 | Mitsubishi Electric Corp | 薄膜圧電素子 |
US6600252B2 (en) | 1999-01-14 | 2003-07-29 | The Regents Of The University Of Michigan | Method and subsystem for processing signals utilizing a plurality of vibrating micromechanical devices |
US6593831B2 (en) | 1999-01-14 | 2003-07-15 | The Regents Of The University Of Michigan | Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus |
US6566786B2 (en) | 1999-01-14 | 2003-05-20 | The Regents Of The University Of Michigan | Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus |
US6577040B2 (en) * | 1999-01-14 | 2003-06-10 | The Regents Of The University Of Michigan | Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices |
FI107660B (sv) | 1999-07-19 | 2001-09-14 | Nokia Mobile Phones Ltd | Resonatorstruktur |
DE60030688D1 (de) * | 1999-12-10 | 2006-10-26 | Koninkl Philips Electronics Nv | Elektronische geräte mit mikromechanischen schaltern |
DE10003704A1 (de) * | 2000-01-28 | 2001-08-09 | Infineon Technologies Ag | Schaltungsanordnung mit Bandpaßfiltern |
DE10007577C1 (de) | 2000-02-18 | 2001-09-13 | Infineon Technologies Ag | Piezoresonator |
EP1273099A1 (en) * | 2000-04-06 | 2003-01-08 | Koninklijke Philips Electronics N.V. | Tunable filter arrangement comprising resonators. |
JP2003532320A (ja) * | 2000-04-20 | 2003-10-28 | ザ リージェンツ オブ ザ ユニバーシティ オブ ミシガン | 振動マイクロメカニカル素子列を利用して少なくとも1つの所望の出力周波数を有する信号を生成するための方法及び装置 |
US6384697B1 (en) * | 2000-05-08 | 2002-05-07 | Agilent Technologies, Inc. | Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator |
GB0014630D0 (en) * | 2000-06-16 | 2000-08-09 | Koninkl Philips Electronics Nv | Bulk accoustic wave filter |
SE0101184D0 (sv) * | 2001-04-02 | 2001-04-02 | Ericsson Telefon Ab L M | Micro electromechanical switches |
US7746292B2 (en) * | 2001-04-11 | 2010-06-29 | Kyocera Wireless Corp. | Reconfigurable radiation desensitivity bracket systems and methods |
US7154440B2 (en) * | 2001-04-11 | 2006-12-26 | Kyocera Wireless Corp. | Phase array antenna using a constant-gain phase shifter |
US7174147B2 (en) * | 2001-04-11 | 2007-02-06 | Kyocera Wireless Corp. | Bandpass filter with tunable resonator |
US7394430B2 (en) * | 2001-04-11 | 2008-07-01 | Kyocera Wireless Corp. | Wireless device reconfigurable radiation desensitivity bracket systems and methods |
US7221243B2 (en) * | 2001-04-11 | 2007-05-22 | Kyocera Wireless Corp. | Apparatus and method for combining electrical signals |
US6690251B2 (en) * | 2001-04-11 | 2004-02-10 | Kyocera Wireless Corporation | Tunable ferro-electric filter |
CN1276577C (zh) * | 2001-04-25 | 2006-09-20 | 皇家菲利浦电子有限公司 | 具有两个压电层的结构和操作滤波器装置的方法 |
US6621368B2 (en) | 2001-06-06 | 2003-09-16 | Remec Oy | Dynamic range extension for an electronic circuit |
FI118400B (sv) * | 2001-08-21 | 2007-10-31 | Nokia Corp | Filterstruktur med piezoelektriska resonatorer |
US7176845B2 (en) * | 2002-02-12 | 2007-02-13 | Kyocera Wireless Corp. | System and method for impedance matching an antenna to sub-bands in a communication band |
US7180467B2 (en) * | 2002-02-12 | 2007-02-20 | Kyocera Wireless Corp. | System and method for dual-band antenna matching |
US7184727B2 (en) * | 2002-02-12 | 2007-02-27 | Kyocera Wireless Corp. | Full-duplex antenna system and method |
KR100499126B1 (ko) * | 2002-06-20 | 2005-07-04 | 삼성전자주식회사 | 유기막 멤브레인을 이용한 액츄에이터 |
JP4075503B2 (ja) * | 2002-07-30 | 2008-04-16 | ソニー株式会社 | マイクロマシンおよびその製造方法 |
US6944432B2 (en) * | 2002-11-12 | 2005-09-13 | Nokia Corporation | Crystal-less oscillator transceiver |
AU2003274553A1 (en) | 2002-11-19 | 2004-06-15 | Koninklijke Philips Electronics N.V. | Duplexer and method of isolating an rx-band and a tx-band |
FR2852165A1 (fr) * | 2003-03-06 | 2004-09-10 | St Microelectronics Sa | Procede de realisation d'un microresonateur piezolectrique accordable |
JP2004281742A (ja) * | 2003-03-17 | 2004-10-07 | Japan Science & Technology Agency | 半導体素子、半導体センサーおよび半導体記憶素子 |
KR100599083B1 (ko) * | 2003-04-22 | 2006-07-12 | 삼성전자주식회사 | 캔틸레버 형태의 압전 박막 공진 소자 및 그 제조방법 |
US6927651B2 (en) * | 2003-05-12 | 2005-08-09 | Agilent Technologies, Inc. | Acoustic resonator devices having multiple resonant frequencies and methods of making the same |
US20040227578A1 (en) * | 2003-05-14 | 2004-11-18 | Miikka Hamalainen | Acoustic resonance-based frequency synthesizer using at least one bulk acoustic wave (BAW) or thin film bulk acoustic wave (FBAR) device |
US7720443B2 (en) | 2003-06-02 | 2010-05-18 | Kyocera Wireless Corp. | System and method for filtering time division multiple access telephone communications |
US6862441B2 (en) | 2003-06-09 | 2005-03-01 | Nokia Corporation | Transmitter filter arrangement for multiband mobile phone |
US7196591B2 (en) * | 2003-08-06 | 2007-03-27 | Synergy Microwave Corporation | Tunable frequency, low phase noise and low thermal drift oscillator |
JP2005136588A (ja) * | 2003-10-29 | 2005-05-26 | Sharp Corp | 圧電薄膜共振器、フィルタ、フィルタバンク、フィルタバンク一体型電力増幅器および高周波通信装置 |
DE10352642B4 (de) * | 2003-11-11 | 2018-11-29 | Snaptrack, Inc. | Schaltung mit verringerter Einfügedämpfung und Bauelement mit der Schaltung |
US20050148065A1 (en) * | 2003-12-30 | 2005-07-07 | Intel Corporation | Biosensor utilizing a resonator having a functionalized surface |
FI20040162A0 (sv) | 2004-02-03 | 2004-02-03 | Nokia Oyj | Stabilisering av frekvensen hos en referensoscillator |
US7248845B2 (en) * | 2004-07-09 | 2007-07-24 | Kyocera Wireless Corp. | Variable-loss transmitter and method of operation |
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JP2006203304A (ja) * | 2005-01-18 | 2006-08-03 | Hitachi Media Electoronics Co Ltd | 圧電薄膜共振器及びそれを用いた発振器並びにそれを内蔵した半導体集積回路 |
JP4814316B2 (ja) * | 2005-05-02 | 2011-11-16 | エプコス アーゲー | 統合減結合コンデンサを有する容量性rf−mems装置 |
CA2608203C (en) * | 2005-05-20 | 2012-09-18 | Synergy Microwave Corporation | Tunable oscillator having series and parallel tuned resonant circuits |
US20060273866A1 (en) * | 2005-06-07 | 2006-12-07 | Nokia Corporation | Film bulk acoustic wave resonator with differential topology |
US7299529B2 (en) * | 2005-06-16 | 2007-11-27 | Intel Corporation | Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition |
US7378781B2 (en) | 2005-09-07 | 2008-05-27 | Nokia Corporation | Acoustic wave resonator with integrated temperature control for oscillator purposes |
US20070089513A1 (en) * | 2005-09-30 | 2007-04-26 | Rosenau Steven A | Resonator based transmitters for capacitive sensors |
JP2009510884A (ja) * | 2005-09-30 | 2009-03-12 | エヌエックスピー ビー ヴィ | 薄膜バルク音響(baw)共振器におけるまたはそれに関連する改良 |
EP1786096A3 (en) * | 2005-11-15 | 2007-06-27 | Synergy Microwave Corproation | Low cost multi-octave-band tunable oscillator having low and uniform phase noise |
US7548762B2 (en) * | 2005-11-30 | 2009-06-16 | Kyocera Corporation | Method for tuning a GPS antenna matching network |
JP2007174438A (ja) | 2005-12-23 | 2007-07-05 | Toshiba Corp | フィルタ回路及びフィルタを備えた無線通信システム |
US7675388B2 (en) * | 2006-03-07 | 2010-03-09 | Agile Rf, Inc. | Switchable tunable acoustic resonator using BST material |
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EP1976015B1 (en) | 2007-03-26 | 2014-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Switching element, method for manufacturing the same, and display device including switching element |
JP5136134B2 (ja) * | 2008-03-18 | 2013-02-06 | ソニー株式会社 | バンドパスフィルタ装置、その製造方法、テレビジョンチューナおよびテレビジョン受信機 |
US7777595B2 (en) * | 2008-04-30 | 2010-08-17 | John Mezzalingua Associates, Inc. | Multi-channel filter assemblies |
EP2332208B1 (en) * | 2008-09-08 | 2013-07-31 | Telefonaktiebolaget L M Ericsson (PUBL) | A reconfigurable filter apparatus |
DE102008049668B4 (de) * | 2008-09-30 | 2016-05-04 | Intel Deutschland Gmbh | Hochfrequenz-Vorstufe und Empfänger |
US20110076974A1 (en) * | 2009-01-31 | 2011-03-31 | Sei-Joo Jang | Flexible wireless network system and method of use |
WO2012079038A2 (en) * | 2010-12-10 | 2012-06-14 | Peregrine Semiconductor Corporation | Method, system, and apparatus for resonator circuits and modulating resonators |
WO2015084456A2 (en) * | 2013-09-18 | 2015-06-11 | The Regents Of The University Of California | Tunable q resonator |
US10547287B2 (en) * | 2017-02-03 | 2020-01-28 | Samsung Electro-Mechanics Co., Ltd. | Filter and front end module including the same |
US10511286B2 (en) * | 2017-02-03 | 2019-12-17 | Samsung Electro-Mechanics Co., Ltd. | Variable frequency filter |
WO2019021983A1 (ja) * | 2017-07-25 | 2019-01-31 | 株式会社村田製作所 | 高周波フィルタ、マルチプレクサ、高周波フロントエンド回路および通信装置 |
WO2019150689A1 (ja) * | 2018-02-05 | 2019-08-08 | 株式会社村田製作所 | フィルタ装置、高周波フロントエンド回路、および通信装置 |
KR20200078084A (ko) * | 2018-12-21 | 2020-07-01 | 삼성전기주식회사 | 프론트 엔드 모듈 |
US10979019B2 (en) * | 2019-06-11 | 2021-04-13 | Globalfoundries Singapore Pte. Ltd. | Reconfigurable resonator devices, methods of forming reconfigurable resonator devices, and operations thereof |
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JPH03178206A (ja) * | 1989-12-06 | 1991-08-02 | Nec Corp | モノリシック集積回路化発振器 |
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JPH08148968A (ja) * | 1994-11-24 | 1996-06-07 | Mitsubishi Electric Corp | 薄膜圧電素子 |
US5714917A (en) | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
US5873154A (en) | 1996-10-17 | 1999-02-23 | Nokia Mobile Phones Limited | Method for fabricating a resonator having an acoustic mirror |
US5808527A (en) * | 1996-12-21 | 1998-09-15 | Hughes Electronics Corporation | Tunable microwave network using microelectromechanical switches |
US5872493A (en) | 1997-03-13 | 1999-02-16 | Nokia Mobile Phones, Ltd. | Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror |
US6312816B1 (en) * | 1998-02-20 | 2001-11-06 | Advanced Technology Materials, Inc. | A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators |
-
1998
- 1998-06-02 FI FI981245A patent/FI106894B/sv not_active IP Right Cessation
-
1999
- 1999-05-27 US US09/321,339 patent/US6242843B1/en not_active Expired - Lifetime
- 1999-06-02 EP EP99304277A patent/EP0962999A3/en not_active Ceased
- 1999-06-02 EP EP08004288A patent/EP1936733B1/en not_active Expired - Lifetime
- 1999-06-02 CN CN99106965A patent/CN1130790C/zh not_active Expired - Fee Related
- 1999-06-02 JP JP11154477A patent/JP2000030594A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111384923A (zh) * | 2020-04-09 | 2020-07-07 | 中国电子科技集团公司第二十六研究所 | 一种小型化格型晶体滤波器 |
Also Published As
Publication number | Publication date |
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CN1130790C (zh) | 2003-12-10 |
EP0962999A2 (en) | 1999-12-08 |
US6242843B1 (en) | 2001-06-05 |
CN1237827A (zh) | 1999-12-08 |
EP1936733B1 (en) | 2011-09-21 |
EP1936733A1 (en) | 2008-06-25 |
FI106894B (sv) | 2001-04-30 |
JP2000030594A (ja) | 2000-01-28 |
FI981245A (sv) | 1999-12-03 |
EP0962999A3 (en) | 2001-05-16 |
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