FI981245A0 - Resonaattorirakenteita - Google Patents

Resonaattorirakenteita

Info

Publication number
FI981245A0
FI981245A0 FI981245A FI981245A FI981245A0 FI 981245 A0 FI981245 A0 FI 981245A0 FI 981245 A FI981245 A FI 981245A FI 981245 A FI981245 A FI 981245A FI 981245 A0 FI981245 A0 FI 981245A0
Authority
FI
Finland
Prior art keywords
resonator structures
resonator
structures
Prior art date
Application number
FI981245A
Other languages
English (en)
Swedish (sv)
Other versions
FI106894B (fi
FI981245A (fi
Inventor
Helena Pohjonen
Juha Ellae
Original Assignee
Nokia Mobile Phones Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Mobile Phones Ltd filed Critical Nokia Mobile Phones Ltd
Publication of FI981245A0 publication Critical patent/FI981245A0/fi
Priority to FI981245A priority Critical patent/FI106894B/fi
Priority to FI981415A priority patent/FI108583B/fi
Priority to US09/321,339 priority patent/US6242843B1/en
Priority to US09/321,058 priority patent/US6204737B1/en
Priority to EP99304281A priority patent/EP0963000B1/en
Priority to JP11154477A priority patent/JP2000030594A/ja
Priority to EP99304277A priority patent/EP0962999A3/en
Priority to JP11154478A priority patent/JP2000030595A/ja
Priority to CN99106966A priority patent/CN1127168C/zh
Priority to CN99106965A priority patent/CN1130790C/zh
Priority to EP08004288A priority patent/EP1936733B1/en
Priority to DE69927551T priority patent/DE69927551T2/de
Publication of FI981245A publication Critical patent/FI981245A/fi
Application granted granted Critical
Publication of FI106894B publication Critical patent/FI106894B/fi

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
    • H03H9/585—Stacked Crystal Filters [SCF]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127—Strip line switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/545—Filters comprising resonators of piezoelectric or electrostrictive material including active elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/587—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/60—Electric coupling means therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
    • H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
    • H01H1/20—Bridging contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0052—Special contact materials used for MEMS
    • H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Micromachines (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
FI981245A 1998-06-02 1998-06-02 Resonaattorirakenteita FI106894B (fi)

Priority Applications (12)

Application Number Priority Date Filing Date Title
FI981245A FI106894B (fi) 1998-06-02 1998-06-02 Resonaattorirakenteita
FI981415A FI108583B (fi) 1998-06-02 1998-06-18 Resonaattorirakenteita
US09/321,339 US6242843B1 (en) 1998-06-02 1999-05-27 Resonator structures
US09/321,058 US6204737B1 (en) 1998-06-02 1999-05-27 Piezoelectric resonator structures with a bending element performing a voltage controlled switching function
EP99304277A EP0962999A3 (en) 1998-06-02 1999-06-02 Resonator structures
JP11154477A JP2000030594A (ja) 1998-06-02 1999-06-02 共振器の構造
EP99304281A EP0963000B1 (en) 1998-06-02 1999-06-02 Resonator structures
JP11154478A JP2000030595A (ja) 1998-06-02 1999-06-02 共振器の構造
CN99106966A CN1127168C (zh) 1998-06-02 1999-06-02 谐振器单元
CN99106965A CN1130790C (zh) 1998-06-02 1999-06-02 谐振器结构
EP08004288A EP1936733B1 (en) 1998-06-02 1999-06-02 Resonator structures
DE69927551T DE69927551T2 (de) 1998-06-02 1999-06-02 Resonatorstrukturen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI981245A FI106894B (fi) 1998-06-02 1998-06-02 Resonaattorirakenteita
FI981245 1998-06-02

Publications (3)

Publication Number Publication Date
FI981245A0 true FI981245A0 (fi) 1998-06-02
FI981245A FI981245A (fi) 1999-12-03
FI106894B FI106894B (fi) 2001-04-30

Family

ID=8551881

Family Applications (1)

Application Number Title Priority Date Filing Date
FI981245A FI106894B (fi) 1998-06-02 1998-06-02 Resonaattorirakenteita

Country Status (5)

Country Link
US (1) US6242843B1 (fi)
EP (2) EP0962999A3 (fi)
JP (1) JP2000030594A (fi)
CN (1) CN1130790C (fi)
FI (1) FI106894B (fi)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111384923A (zh) * 2020-04-09 2020-07-07 中国电子科技集团公司第二十六研究所 一种小型化格型晶体滤波器

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI108583B (fi) * 1998-06-02 2002-02-15 Nokia Corp Resonaattorirakenteita
JP2000209063A (ja) * 1998-11-12 2000-07-28 Mitsubishi Electric Corp 薄膜圧電素子
US6600252B2 (en) 1999-01-14 2003-07-29 The Regents Of The University Of Michigan Method and subsystem for processing signals utilizing a plurality of vibrating micromechanical devices
US6566786B2 (en) 1999-01-14 2003-05-20 The Regents Of The University Of Michigan Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus
US6577040B2 (en) * 1999-01-14 2003-06-10 The Regents Of The University Of Michigan Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices
US6593831B2 (en) 1999-01-14 2003-07-15 The Regents Of The University Of Michigan Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus
FI107660B (fi) 1999-07-19 2001-09-14 Nokia Mobile Phones Ltd Resonaattorirakenne
CN1197108C (zh) * 1999-12-10 2005-04-13 皇家菲利浦电子有限公司 包括微机械开关的电子器件
DE10003704A1 (de) * 2000-01-28 2001-08-09 Infineon Technologies Ag Schaltungsanordnung mit Bandpaßfiltern
DE10007577C1 (de) 2000-02-18 2001-09-13 Infineon Technologies Ag Piezoresonator
EP1273099A1 (en) * 2000-04-06 2003-01-08 Koninklijke Philips Electronics N.V. Tunable filter arrangement comprising resonators.
CA2406223A1 (en) * 2000-04-20 2001-11-01 The Regents Of The University Of Michigan Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus
US6384697B1 (en) * 2000-05-08 2002-05-07 Agilent Technologies, Inc. Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator
GB0014630D0 (en) * 2000-06-16 2000-08-09 Koninkl Philips Electronics Nv Bulk accoustic wave filter
SE0101184D0 (sv) * 2001-04-02 2001-04-02 Ericsson Telefon Ab L M Micro electromechanical switches
US7746292B2 (en) * 2001-04-11 2010-06-29 Kyocera Wireless Corp. Reconfigurable radiation desensitivity bracket systems and methods
US6690251B2 (en) * 2001-04-11 2004-02-10 Kyocera Wireless Corporation Tunable ferro-electric filter
US7394430B2 (en) * 2001-04-11 2008-07-01 Kyocera Wireless Corp. Wireless device reconfigurable radiation desensitivity bracket systems and methods
US7154440B2 (en) * 2001-04-11 2006-12-26 Kyocera Wireless Corp. Phase array antenna using a constant-gain phase shifter
US7221243B2 (en) * 2001-04-11 2007-05-22 Kyocera Wireless Corp. Apparatus and method for combining electrical signals
US7174147B2 (en) * 2001-04-11 2007-02-06 Kyocera Wireless Corp. Bandpass filter with tunable resonator
WO2002087081A1 (en) * 2001-04-25 2002-10-31 Koninklijke Philips Electronics N.V. Arrangement with two piezoelectric layers, and method of operating a filter device
US6621368B2 (en) 2001-06-06 2003-09-16 Remec Oy Dynamic range extension for an electronic circuit
FI118400B (fi) * 2001-08-21 2007-10-31 Nokia Corp Pietsosähköisiä resonaattoreita käsittävä suodinrakenne
US7176845B2 (en) * 2002-02-12 2007-02-13 Kyocera Wireless Corp. System and method for impedance matching an antenna to sub-bands in a communication band
US7180467B2 (en) * 2002-02-12 2007-02-20 Kyocera Wireless Corp. System and method for dual-band antenna matching
US7184727B2 (en) * 2002-02-12 2007-02-27 Kyocera Wireless Corp. Full-duplex antenna system and method
KR100499126B1 (ko) * 2002-06-20 2005-07-04 삼성전자주식회사 유기막 멤브레인을 이용한 액츄에이터
JP4075503B2 (ja) * 2002-07-30 2008-04-16 ソニー株式会社 マイクロマシンおよびその製造方法
US6944432B2 (en) * 2002-11-12 2005-09-13 Nokia Corporation Crystal-less oscillator transceiver
WO2004047290A1 (en) 2002-11-19 2004-06-03 Koninklijke Philips Electronics N.V. Duplexer and method of isolating an rx-band and a tx-band
FR2852165A1 (fr) * 2003-03-06 2004-09-10 St Microelectronics Sa Procede de realisation d'un microresonateur piezolectrique accordable
JP2004281742A (ja) * 2003-03-17 2004-10-07 Japan Science & Technology Agency 半導体素子、半導体センサーおよび半導体記憶素子
KR100599083B1 (ko) * 2003-04-22 2006-07-12 삼성전자주식회사 캔틸레버 형태의 압전 박막 공진 소자 및 그 제조방법
US6927651B2 (en) * 2003-05-12 2005-08-09 Agilent Technologies, Inc. Acoustic resonator devices having multiple resonant frequencies and methods of making the same
US20040227578A1 (en) * 2003-05-14 2004-11-18 Miikka Hamalainen Acoustic resonance-based frequency synthesizer using at least one bulk acoustic wave (BAW) or thin film bulk acoustic wave (FBAR) device
US7720443B2 (en) 2003-06-02 2010-05-18 Kyocera Wireless Corp. System and method for filtering time division multiple access telephone communications
US6862441B2 (en) * 2003-06-09 2005-03-01 Nokia Corporation Transmitter filter arrangement for multiband mobile phone
US7196591B2 (en) * 2003-08-06 2007-03-27 Synergy Microwave Corporation Tunable frequency, low phase noise and low thermal drift oscillator
JP2005136588A (ja) * 2003-10-29 2005-05-26 Sharp Corp 圧電薄膜共振器、フィルタ、フィルタバンク、フィルタバンク一体型電力増幅器および高周波通信装置
DE10352642B4 (de) * 2003-11-11 2018-11-29 Snaptrack, Inc. Schaltung mit verringerter Einfügedämpfung und Bauelement mit der Schaltung
US20050148065A1 (en) * 2003-12-30 2005-07-07 Intel Corporation Biosensor utilizing a resonator having a functionalized surface
FI20040162A0 (fi) * 2004-02-03 2004-02-03 Nokia Oyj Viitevärähtelijän taajuuden vakauttaminen
US7248845B2 (en) * 2004-07-09 2007-07-24 Kyocera Wireless Corp. Variable-loss transmitter and method of operation
JPWO2006070616A1 (ja) * 2004-12-28 2008-06-12 株式会社村田製作所 平衡−不平衡型フィルタモジュールおよび通信装置
JP2006203304A (ja) * 2005-01-18 2006-08-03 Hitachi Media Electoronics Co Ltd 圧電薄膜共振器及びそれを用いた発振器並びにそれを内蔵した半導体集積回路
US8238074B2 (en) * 2005-05-02 2012-08-07 Epcos Ag Capacitive RF-MEMS device with integrated decoupling capacitor
US7636021B2 (en) * 2005-05-20 2009-12-22 Synergy Microwave Corporation Low noise and low phase hits tunable oscillator
US20060273866A1 (en) * 2005-06-07 2006-12-07 Nokia Corporation Film bulk acoustic wave resonator with differential topology
US7299529B2 (en) * 2005-06-16 2007-11-27 Intel Corporation Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition
US7378781B2 (en) 2005-09-07 2008-05-27 Nokia Corporation Acoustic wave resonator with integrated temperature control for oscillator purposes
JP2009510884A (ja) * 2005-09-30 2009-03-12 エヌエックスピー ビー ヴィ 薄膜バルク音響（ｂａｗ）共振器におけるまたはそれに関連する改良
US20070089513A1 (en) * 2005-09-30 2007-04-26 Rosenau Steven A Resonator based transmitters for capacitive sensors
JP5568207B2 (ja) * 2005-11-15 2014-08-06 シナジー マイクロウェーブ コーポレーション ユーザ指定可能、低コスト、低ノイズであり、位相跳躍に影響されにくいマルチオクターブ帯域チューナブル発振器
US7548762B2 (en) * 2005-11-30 2009-06-16 Kyocera Corporation Method for tuning a GPS antenna matching network
JP2007174438A (ja) 2005-12-23 2007-07-05 Toshiba Corp フィルタ回路及びフィルタを備えた無線通信システム
US7675388B2 (en) * 2006-03-07 2010-03-09 Agile Rf, Inc. Switchable tunable acoustic resonator using BST material
DE102006023165B4 (de) * 2006-05-17 2008-02-14 Infineon Technologies Ag Verfahren zur Herstellung eines akustischen Spiegels aus alternierend angeordneten Schichten hoher und niedriger akustischer Impedanz
CN101115325B (zh) * 2006-07-28 2011-05-11 中国科学院声学研究所 一种适合单芯片集成的调频硅微电容传声器系统
EP1976015B1 (en) 2007-03-26 2014-09-10 Semiconductor Energy Laboratory Co., Ltd. Switching element, method for manufacturing the same, and display device including switching element
JP5136134B2 (ja) * 2008-03-18 2013-02-06 ソニー株式会社 バンドパスフィルタ装置、その製造方法、テレビジョンチューナおよびテレビジョン受信機
US7777595B2 (en) * 2008-04-30 2010-08-17 John Mezzalingua Associates, Inc. Multi-channel filter assemblies
EP2332208B1 (en) * 2008-09-08 2013-07-31 Telefonaktiebolaget L M Ericsson (PUBL) A reconfigurable filter apparatus
DE102008049668B4 (de) * 2008-09-30 2016-05-04 Intel Deutschland Gmbh Hochfrequenz-Vorstufe und Empfänger
US20110076974A1 (en) * 2009-01-31 2011-03-31 Sei-Joo Jang Flexible wireless network system and method of use
JP6000969B2 (ja) * 2010-12-10 2016-10-05 ペレグリン セミコンダクター コーポレイション 共振器回路及び共振器の調整のための方法、システム、及び装置
WO2015084456A2 (en) 2013-09-18 2015-06-11 The Regents Of The University Of California Tunable q resonator
US10511286B2 (en) * 2017-02-03 2019-12-17 Samsung Electro-Mechanics Co., Ltd. Variable frequency filter
US10547287B2 (en) * 2017-02-03 2020-01-28 Samsung Electro-Mechanics Co., Ltd. Filter and front end module including the same
CN117060880A (zh) * 2017-07-25 2023-11-14 株式会社村田制作所 高频滤波器、多工器、高频前端电路以及通信装置
JP6889423B2 (ja) * 2018-02-05 2021-06-18 株式会社村田製作所 フィルタ装置、高周波フロントエンド回路、および通信装置
KR20200078084A (ko) * 2018-12-21 2020-07-01 삼성전기주식회사 프론트 엔드 모듈
US10979019B2 (en) * 2019-06-11 2021-04-13 Globalfoundries Singapore Pte. Ltd. Reconfigurable resonator devices, methods of forming reconfigurable resonator devices, and operations thereof

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4570139A (en) * 1984-12-14 1986-02-11 Eaton Corporation Thin-film magnetically operated micromechanical electric switching device
JPH03178206A (ja) * 1989-12-06 1991-08-02 Nec Corp モノリシック集積回路化発振器
US5075641A (en) * 1990-12-04 1991-12-24 Iowa State University Research Foundation, Inc. High frequency oscillator comprising cointegrated thin film resonator and active device
US5747857A (en) * 1991-03-13 1998-05-05 Matsushita Electric Industrial Co., Ltd. Electronic components having high-frequency elements and methods of manufacture therefor
JPH0546111U (ja) * 1991-11-21 1993-06-18 三菱電機株式会社 弾性表面波発振器
JPH06125A (ja) * 1992-06-22 1994-01-11 Matsushita Electric Ind Co Ltd 炊飯器
JPH07109816B2 (ja) * 1992-10-13 1995-11-22 松下電器産業株式会社 電子音響集積回路およびその製造方法
WO1994014240A1 (en) * 1992-12-11 1994-06-23 The Regents Of The University Of California Microelectromechanical signal processors
US5382930A (en) 1992-12-21 1995-01-17 Trw Inc. Monolithic multipole filters made of thin film stacked crystal filters
US5373268A (en) 1993-02-01 1994-12-13 Motorola, Inc. Thin film resonator having stacked acoustic reflecting impedance matching layers and method
US5619061A (en) * 1993-07-27 1997-04-08 Texas Instruments Incorporated Micromechanical microwave switching
JPH08148968A (ja) * 1994-11-24 1996-06-07 Mitsubishi Electric Corp 薄膜圧電素子
US5714917A (en) 1996-10-02 1998-02-03 Nokia Mobile Phones Limited Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation
US5873154A (en) 1996-10-17 1999-02-23 Nokia Mobile Phones Limited Method for fabricating a resonator having an acoustic mirror
US5808527A (en) * 1996-12-21 1998-09-15 Hughes Electronics Corporation Tunable microwave network using microelectromechanical switches
US5872493A (en) 1997-03-13 1999-02-16 Nokia Mobile Phones, Ltd. Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
US6312816B1 (en) * 1998-02-20 2001-11-06 Advanced Technology Materials, Inc. A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111384923A (zh) * 2020-04-09 2020-07-07 中国电子科技集团公司第二十六研究所 一种小型化格型晶体滤波器

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EP1936733A1 (en) 2008-06-25
EP0962999A3 (en) 2001-05-16
FI106894B (fi) 2001-04-30
EP0962999A2 (en) 1999-12-08
JP2000030594A (ja) 2000-01-28
EP1936733B1 (en) 2011-09-21
US6242843B1 (en) 2001-06-05
CN1237827A (zh) 1999-12-08
CN1130790C (zh) 2003-12-10
FI981245A (fi) 1999-12-03

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