FI106894B - Resonatorstrukturer - Google Patents
Resonatorstrukturer Download PDFInfo
- Publication number
- FI106894B FI106894B FI981245A FI981245A FI106894B FI 106894 B FI106894 B FI 106894B FI 981245 A FI981245 A FI 981245A FI 981245 A FI981245 A FI 981245A FI 106894 B FI106894 B FI 106894B
- Authority
- FI
- Finland
- Prior art keywords
- resonator
- substrate
- acoustic
- structures
- switch
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 61
- 238000010295 mobile communication Methods 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
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- 238000000059 patterning Methods 0.000 claims description 2
- 239000008187 granular material Substances 0.000 claims 11
- 239000010410 layer Substances 0.000 description 48
- 239000000463 material Substances 0.000 description 23
- 238000010897 surface acoustic wave method Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- 239000010931 gold Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
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- 239000011787 zinc oxide Substances 0.000 description 3
- CFAKWWQIUFSQFU-UHFFFAOYSA-N 2-hydroxy-3-methylcyclopent-2-en-1-one Chemical compound CC1=C(O)C(=O)CC1 CFAKWWQIUFSQFU-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000001837 2-hydroxy-3-methylcyclopent-2-en-1-one Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 230000002452 interceptive effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000013641 positive control Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
- H03H9/585—Stacked Crystal Filters [SCF]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
- H01P1/127—Strip line switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/545—Filters comprising resonators of piezo-electric or electrostrictive material including active elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
- H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
- H01H1/20—Bridging contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
- H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Claims (11)
1. En resonatorstruktur omfattande minst en resonator pä ett substrat, varvid resonator tillverkats ätminstone genom att avlagra och förse med mönster ett flertal 10 skikt pä substratet, kännetecknad av att strukturen omfattar minst ett brytarelement som tillverkats ätminstone genom att avlagra och förse med mönster ett flertal skikt pä substratet.
2. En resonatorstruktur enligt patentkrav 1, kännetecknad av att minst ett av nämnda minst ena brytarelement har minst en transistor.
3. En resonatorstruktur enligt patentkrav 1, kännetecknad av att minst ett av nämnda minst ena brytarelement är en mikromekanisk kontakt.
4. En resonatorstruktur enligt patentkrav 1, kännetecknad av att minst en av nämnda minst ena resonator är en akustisk massavägsresonator.
5. En resonatorstruktur enligt patentkrav 1, kännetecknad av att minst en av , 20 nämnda minst ena resonator är en akustisk ytvägsresonator.
6. En resonatorstruktur enligt patentkrav 1, kännetecknad av att minst en av nämnda minst ena resonator har minst ett skikt som är en del av samma skikt, av vilket minst ett skikt av minst en av nämnda minst ena brytarelement är en del av.
7. En resonatorstruktur enligt patentkrav 1, kännetecknad av att resonatorstruk- *· 25 turen omfattar minst ett filter.
8. En resonatorstruktur enligt patentkrav 1, kännetecknad av att resonatorstruk-turen omfattar minst en modulator.
9. En resonatorstruktur enligt patentkrav 1, kännetecknad av att resonatorstruk-turen är en omkopplingsbar resonatorgrupp hos en omkopplingsbar filtergrupp. 106894 17
10. En resonatorstraktur enligt patentkrav 1, kännetecknad av att minst en transistor integrerats pä substratet.
11. En mobil teleutrustning, kännetecknad av att den omfattar -en resonatorstruktur med minst en resonator pä ett substrat, vilken resonator 5 tillverkats ätminstone genom att avlagra och förse med mönster ett flertal skikt pä substratet, och - minst ett brytarelement som tillverkats ätminstone genom att avlagra och förse med mönster ett flertal skikt pä substratet. m ·· * (
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI981245A FI106894B (sv) | 1998-06-02 | 1998-06-02 | Resonatorstrukturer |
| FI981415A FI108583B (sv) | 1998-06-02 | 1998-06-18 | Resonatorstrukturer |
| US09/321,339 US6242843B1 (en) | 1998-06-02 | 1999-05-27 | Resonator structures |
| US09/321,058 US6204737B1 (en) | 1998-06-02 | 1999-05-27 | Piezoelectric resonator structures with a bending element performing a voltage controlled switching function |
| CN99106966A CN1127168C (zh) | 1998-06-02 | 1999-06-02 | 谐振器单元 |
| JP11154477A JP2000030594A (ja) | 1998-06-02 | 1999-06-02 | 共振器の構造 |
| EP99304281A EP0963000B1 (en) | 1998-06-02 | 1999-06-02 | Resonator structures |
| JP11154478A JP2000030595A (ja) | 1998-06-02 | 1999-06-02 | 共振器の構造 |
| CN99106965A CN1130790C (zh) | 1998-06-02 | 1999-06-02 | 谐振器结构 |
| EP08004288A EP1936733B1 (en) | 1998-06-02 | 1999-06-02 | Resonator structures |
| EP99304277A EP0962999A3 (en) | 1998-06-02 | 1999-06-02 | Resonator structures |
| DE69927551T DE69927551T2 (de) | 1998-06-02 | 1999-06-02 | Resonatorstrukturen |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI981245A FI106894B (sv) | 1998-06-02 | 1998-06-02 | Resonatorstrukturer |
| FI981245 | 1998-06-02 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI981245A0 FI981245A0 (sv) | 1998-06-02 |
| FI981245A FI981245A (sv) | 1999-12-03 |
| FI106894B true FI106894B (sv) | 2001-04-30 |
Family
ID=8551881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI981245A FI106894B (sv) | 1998-06-02 | 1998-06-02 | Resonatorstrukturer |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6242843B1 (sv) |
| EP (2) | EP0962999A3 (sv) |
| JP (1) | JP2000030594A (sv) |
| CN (1) | CN1130790C (sv) |
| FI (1) | FI106894B (sv) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI108583B (sv) * | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonatorstrukturer |
| JP2000209063A (ja) * | 1998-11-12 | 2000-07-28 | Mitsubishi Electric Corp | 薄膜圧電素子 |
| US6600252B2 (en) | 1999-01-14 | 2003-07-29 | The Regents Of The University Of Michigan | Method and subsystem for processing signals utilizing a plurality of vibrating micromechanical devices |
| US6566786B2 (en) | 1999-01-14 | 2003-05-20 | The Regents Of The University Of Michigan | Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus |
| US6577040B2 (en) * | 1999-01-14 | 2003-06-10 | The Regents Of The University Of Michigan | Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices |
| US6593831B2 (en) | 1999-01-14 | 2003-07-15 | The Regents Of The University Of Michigan | Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus |
| FI107660B (sv) | 1999-07-19 | 2001-09-14 | Nokia Mobile Phones Ltd | Resonatorstruktur |
| WO2001043153A1 (en) * | 1999-12-10 | 2001-06-14 | Koninklijke Philips Electronics N.V. | Electronic devices including micromechanical switches |
| DE10003704A1 (de) * | 2000-01-28 | 2001-08-09 | Infineon Technologies Ag | Schaltungsanordnung mit Bandpaßfiltern |
| DE10007577C1 (de) | 2000-02-18 | 2001-09-13 | Infineon Technologies Ag | Piezoresonator |
| EP1273099A1 (en) * | 2000-04-06 | 2003-01-08 | Koninklijke Philips Electronics N.V. | Tunable filter arrangement comprising resonators. |
| AU2001255868A1 (en) * | 2000-04-20 | 2001-11-07 | The Regents Of The University Of Michigan | Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus |
| US6384697B1 (en) * | 2000-05-08 | 2002-05-07 | Agilent Technologies, Inc. | Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator |
| GB0014630D0 (en) * | 2000-06-16 | 2000-08-09 | Koninkl Philips Electronics Nv | Bulk accoustic wave filter |
| SE0101184D0 (sv) * | 2001-04-02 | 2001-04-02 | Ericsson Telefon Ab L M | Micro electromechanical switches |
| US7221243B2 (en) * | 2001-04-11 | 2007-05-22 | Kyocera Wireless Corp. | Apparatus and method for combining electrical signals |
| US7746292B2 (en) * | 2001-04-11 | 2010-06-29 | Kyocera Wireless Corp. | Reconfigurable radiation desensitivity bracket systems and methods |
| US7174147B2 (en) * | 2001-04-11 | 2007-02-06 | Kyocera Wireless Corp. | Bandpass filter with tunable resonator |
| US7394430B2 (en) * | 2001-04-11 | 2008-07-01 | Kyocera Wireless Corp. | Wireless device reconfigurable radiation desensitivity bracket systems and methods |
| US7154440B2 (en) * | 2001-04-11 | 2006-12-26 | Kyocera Wireless Corp. | Phase array antenna using a constant-gain phase shifter |
| US6690251B2 (en) * | 2001-04-11 | 2004-02-10 | Kyocera Wireless Corporation | Tunable ferro-electric filter |
| EP1386393B1 (en) * | 2001-04-25 | 2008-03-26 | Nxp B.V. | Arrangement with two piezoelectric layers, and method of operating a filter device |
| US6621368B2 (en) | 2001-06-06 | 2003-09-16 | Remec Oy | Dynamic range extension for an electronic circuit |
| FI118400B (sv) * | 2001-08-21 | 2007-10-31 | Nokia Corp | Filterstruktur med piezoelektriska resonatorer |
| US7180467B2 (en) * | 2002-02-12 | 2007-02-20 | Kyocera Wireless Corp. | System and method for dual-band antenna matching |
| US7176845B2 (en) * | 2002-02-12 | 2007-02-13 | Kyocera Wireless Corp. | System and method for impedance matching an antenna to sub-bands in a communication band |
| US7184727B2 (en) * | 2002-02-12 | 2007-02-27 | Kyocera Wireless Corp. | Full-duplex antenna system and method |
| KR100499126B1 (ko) * | 2002-06-20 | 2005-07-04 | 삼성전자주식회사 | 유기막 멤브레인을 이용한 액츄에이터 |
| JP4075503B2 (ja) * | 2002-07-30 | 2008-04-16 | ソニー株式会社 | マイクロマシンおよびその製造方法 |
| US6944432B2 (en) * | 2002-11-12 | 2005-09-13 | Nokia Corporation | Crystal-less oscillator transceiver |
| ATE518303T1 (de) | 2002-11-19 | 2011-08-15 | Nxp Bv | Duplexer und isolierungsverfahren für rx-band und tx-band |
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1998
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1999
- 1999-05-27 US US09/321,339 patent/US6242843B1/en not_active Expired - Lifetime
- 1999-06-02 CN CN99106965A patent/CN1130790C/zh not_active Expired - Fee Related
- 1999-06-02 JP JP11154477A patent/JP2000030594A/ja active Pending
- 1999-06-02 EP EP99304277A patent/EP0962999A3/en not_active Ceased
- 1999-06-02 EP EP08004288A patent/EP1936733B1/en not_active Expired - Lifetime
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|---|---|
| EP0962999A3 (en) | 2001-05-16 |
| FI981245A (sv) | 1999-12-03 |
| JP2000030594A (ja) | 2000-01-28 |
| CN1130790C (zh) | 2003-12-10 |
| CN1237827A (zh) | 1999-12-08 |
| FI981245A0 (sv) | 1998-06-02 |
| US6242843B1 (en) | 2001-06-05 |
| EP1936733A1 (en) | 2008-06-25 |
| EP0962999A2 (en) | 1999-12-08 |
| EP1936733B1 (en) | 2011-09-21 |
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