FI108583B - Resonatorstrukturer - Google Patents

Resonatorstrukturer Download PDF

Info

Publication number
FI108583B
FI108583B FI981415A FI981415A FI108583B FI 108583 B FI108583 B FI 108583B FI 981415 A FI981415 A FI 981415A FI 981415 A FI981415 A FI 981415A FI 108583 B FI108583 B FI 108583B
Authority
FI
Finland
Prior art keywords
resonator
substrate
switch
structures
acoustic
Prior art date
Application number
FI981415A
Other languages
English (en)
Finnish (fi)
Other versions
FI981415A0 (sv
FI981415A (sv
Inventor
Juha Ellae
Original Assignee
Nokia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FI981245A external-priority patent/FI106894B/sv
Application filed by Nokia Corp filed Critical Nokia Corp
Priority to FI981415A priority Critical patent/FI108583B/sv
Publication of FI981415A0 publication Critical patent/FI981415A0/sv
Priority to US09/321,058 priority patent/US6204737B1/en
Priority to DE69927551T priority patent/DE69927551T2/de
Priority to JP11154478A priority patent/JP2000030595A/ja
Priority to EP99304281A priority patent/EP0963000B1/en
Priority to CN99106966A priority patent/CN1127168C/zh
Publication of FI981415A publication Critical patent/FI981415A/sv
Application granted granted Critical
Publication of FI108583B publication Critical patent/FI108583B/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
    • H03H9/585—Stacked Crystal Filters [SCF]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127—Strip line switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/545—Filters comprising resonators of piezo-electric or electrostrictive material including active elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/587—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/60—Electric coupling means therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
    • H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
    • H01H1/20—Bridging contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0052—Special contact materials used for MEMS
    • H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Claims (7)

1. Resonatorkonstruktion innefattande en resonator med ett piezoelektriskt skikt, kännetecknad av att resonatorkonstruktionen innefattar - en första och en andra ledare för att leda styrspänning, 5. varvid ätminstone den ena av nämnda första och andra ledare är i kontakt med nämnda piezoelektriska skikt för att bilda resonatoms elektrod, och - ett böjligt element för att utföra brytarfunktion som svar pä styrspänningen som letts till nämnda första och andra ledare.
2. Resonatorkonstruktion enligt patentkrav 1, kännetecknad av att det piezo- 10 elektriska skiktet är nämnda böjliga element.
3. Resonatorkonstruktion enligt patentkrav 1, kännetecknad av att konstruktio-nen innefattar ett stödskikt för att stöda nämnda piezoelektriska skikt, varvid nämnda stödskikt är nämnda böjliga element.
4. Resonatorkonstruktion enligt patentkrav 1, kännetecknad av att resonator-15 konstruktionen innefattar ett utsprängselement, varvid nämnda utsprängselement är nämnda böjliga element.
5. Resonatorkonstruktion enligt patentkrav 1, kännetecknad av att nämnda resonator är en akustisk volymvägsresonator.
·;·': 6. Resonatorkonstruktion enligt patentkrav 1, kännetecknad av att resonator- .;. 20 konstruktionen innefattar ätminstone ett filter.
' ' 7. Teleapparat, som innefattar en resonatorkonstruktion med ett piezoelektriskt : Λ: skikt, kännetecknad av att teleapparatens resonatorkonstruktion innefattar : : - en första och en andra ledare för att leda brytarfunktionens styrspänning, - varvid ätminstone den ena av nämnda första och andra ledare är i kontakt med 25 nämnda piezoelektriska skikt för att bilda resonatoms elektrod, och ; . - ett böjligt element för att utföra brytarfunktion som svar pä styrspänningen som letts tili nämnda första och andra ledare.
FI981415A 1998-06-02 1998-06-18 Resonatorstrukturer FI108583B (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI981415A FI108583B (sv) 1998-06-02 1998-06-18 Resonatorstrukturer
US09/321,058 US6204737B1 (en) 1998-06-02 1999-05-27 Piezoelectric resonator structures with a bending element performing a voltage controlled switching function
DE69927551T DE69927551T2 (de) 1998-06-02 1999-06-02 Resonatorstrukturen
JP11154478A JP2000030595A (ja) 1998-06-02 1999-06-02 共振器の構造
EP99304281A EP0963000B1 (en) 1998-06-02 1999-06-02 Resonator structures
CN99106966A CN1127168C (zh) 1998-06-02 1999-06-02 谐振器单元

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FI981245 1998-06-02
FI981245A FI106894B (sv) 1998-06-02 1998-06-02 Resonatorstrukturer
FI981415A FI108583B (sv) 1998-06-02 1998-06-18 Resonatorstrukturer
FI981415 1998-06-18

Publications (3)

Publication Number Publication Date
FI981415A0 FI981415A0 (sv) 1998-06-18
FI981415A FI981415A (sv) 1999-12-03
FI108583B true FI108583B (sv) 2002-02-15

Family

ID=26160594

Family Applications (1)

Application Number Title Priority Date Filing Date
FI981415A FI108583B (sv) 1998-06-02 1998-06-18 Resonatorstrukturer

Country Status (6)

Country Link
US (1) US6204737B1 (sv)
EP (1) EP0963000B1 (sv)
JP (1) JP2000030595A (sv)
CN (1) CN1127168C (sv)
DE (1) DE69927551T2 (sv)
FI (1) FI108583B (sv)

Families Citing this family (156)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000209063A (ja) * 1998-11-12 2000-07-28 Mitsubishi Electric Corp 薄膜圧電素子
US6593831B2 (en) * 1999-01-14 2003-07-15 The Regents Of The University Of Michigan Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus
US6566786B2 (en) * 1999-01-14 2003-05-20 The Regents Of The University Of Michigan Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus
JP2001024475A (ja) * 1999-07-09 2001-01-26 Oki Electric Ind Co Ltd 弾性表面波フィルタ
FI107660B (sv) 1999-07-19 2001-09-14 Nokia Mobile Phones Ltd Resonatorstruktur
US6339276B1 (en) * 1999-11-01 2002-01-15 Agere Systems Guardian Corp. Incremental tuning process for electrical resonators based on mechanical motion
US6441539B1 (en) * 1999-11-11 2002-08-27 Murata Manufacturing Co., Ltd. Piezoelectric resonator
US6746577B1 (en) 1999-12-16 2004-06-08 Agere Systems, Inc. Method and apparatus for thickness control and reproducibility of dielectric film deposition
US6524971B1 (en) 1999-12-17 2003-02-25 Agere Systems, Inc. Method of deposition of films
US6306313B1 (en) 2000-02-04 2001-10-23 Agere Systems Guardian Corp. Selective etching of thin films
US7296329B1 (en) 2000-02-04 2007-11-20 Agere Systems Inc. Method of isolation for acoustic resonator device
US6323744B1 (en) 2000-02-04 2001-11-27 Agere Systems Guardian Corp. Grounding of TFR ladder filters
US6377136B1 (en) 2000-02-04 2002-04-23 Agere Systems Guardian Corporation Thin film resonator filter having at least one component with different resonant frequency sets or electrode capacitance
US6437667B1 (en) 2000-02-04 2002-08-20 Agere Systems Guardian Corp. Method of tuning thin film resonator filters by removing or adding piezoelectric material
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
DE10007577C1 (de) * 2000-02-18 2001-09-13 Infineon Technologies Ag Piezoresonator
WO2001078229A1 (en) * 2000-04-06 2001-10-18 Koninklijke Philips Electronics N.V. Tunable filter arrangement comprising resonators.
US6384697B1 (en) * 2000-05-08 2002-05-07 Agilent Technologies, Inc. Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator
US6603241B1 (en) 2000-05-23 2003-08-05 Agere Systems, Inc. Acoustic mirror materials for acoustic devices
US6414570B1 (en) * 2000-06-06 2002-07-02 Raytheon Company Low profile, high isolation and rejection x-band switched filter assembly
US6262464B1 (en) * 2000-06-19 2001-07-17 International Business Machines Corporation Encapsulated MEMS brand-pass filter for integrated circuits
WO2002003437A1 (en) * 2000-06-30 2002-01-10 Motorola, Inc., A Corporation Of The State Of Delaware Hybrid semiconductor structure and device
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6555946B1 (en) * 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6355498B1 (en) 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
US20020070816A1 (en) * 2000-08-24 2002-06-13 Wan-Thai Hsu Method for making micromechanical structures having at least one lateral, small gap therebetween and micromechanical device produced thereby
JP2002076822A (ja) * 2000-08-28 2002-03-15 Kyocera Corp 圧電薄膜フィルタ
US6486751B1 (en) 2000-09-26 2002-11-26 Agere Systems Inc. Increased bandwidth thin film resonator having a columnar structure
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6674291B1 (en) 2000-10-30 2004-01-06 Agere Systems Guardian Corp. Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom
US6587212B1 (en) 2000-10-31 2003-07-01 Agere Systems Inc. Method and apparatus for studying vibrational modes of an electro-acoustic device
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US6743731B1 (en) 2000-11-17 2004-06-01 Agere Systems Inc. Method for making a radio frequency component and component produced thereby
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US6496085B2 (en) * 2001-01-02 2002-12-17 Nokia Mobile Phones Ltd Solidly mounted multi-resonator bulk acoustic wave filter with a patterned acoustic mirror
TW497331B (en) * 2001-01-12 2002-08-01 Asia Pacific Microsystems Inc Micro bulk acoustic wave filter multiplexer
US6509813B2 (en) * 2001-01-16 2003-01-21 Nokia Mobile Phones Ltd. Bulk acoustic wave resonator with a conductive mirror
US7435613B2 (en) * 2001-02-12 2008-10-14 Agere Systems Inc. Methods of fabricating a membrane with improved mechanical integrity
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US7280014B2 (en) * 2001-03-13 2007-10-09 Rochester Institute Of Technology Micro-electro-mechanical switch and a method of using and making thereof
DE60225795T2 (de) * 2001-04-25 2009-04-16 Philips Intellectual Property & Standards Gmbh Anordnung mit zwei piezoelektrischen schichten und verfahren zum betreiben einer filtereinrichtung
JP2003046160A (ja) * 2001-04-26 2003-02-14 Matsushita Electric Ind Co Ltd 圧電素子，アクチュエータ及びインクジェットヘッド
US6472962B1 (en) * 2001-05-17 2002-10-29 Institute Of Microelectronics Inductor-capacitor resonant RF switch
US6600389B2 (en) * 2001-05-30 2003-07-29 Intel Corporation Tapered structures for generating a set of resonators with systematic resonant frequencies
AU2002303933A1 (en) * 2001-05-31 2002-12-09 Rochester Institute Of Technology Fluidic valves, agitators, and pumps and methods thereof
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6707355B1 (en) 2001-06-29 2004-03-16 Teravicta Technologies, Inc. Gradually-actuating micromechanical device
US6646215B1 (en) 2001-06-29 2003-11-11 Teravicin Technologies, Inc. Device adapted to pull a cantilever away from a contact structure
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US6717488B2 (en) * 2001-09-13 2004-04-06 Nth Tech Corporation Resonator with a member having an embedded charge and a method of making thereof
US6842009B2 (en) * 2001-09-13 2005-01-11 Nth Tech Corporation Biohazard sensing system and methods thereof
KR100541895B1 (ko) * 2001-09-21 2006-01-16 가부시끼가이샤 도시바 고주파 필터
US6787438B1 (en) 2001-10-16 2004-09-07 Teravieta Technologies, Inc. Device having one or more contact structures interposed between a pair of electrodes
KR20030032401A (ko) * 2001-10-18 2003-04-26 한국쌍신전기주식회사 압전박막형 공진기 및 그 제조방법
US7211923B2 (en) * 2001-10-26 2007-05-01 Nth Tech Corporation Rotational motion based, electrostatic power source and methods thereof
US7378775B2 (en) * 2001-10-26 2008-05-27 Nth Tech Corporation Motion based, electrostatic power source and methods thereof
KR20030039446A (ko) * 2001-11-13 2003-05-22 삼성전자주식회사 Ｆｂａｒ 제조방법
KR100456771B1 (ko) * 2002-02-04 2004-11-12 주식회사 엠에스솔루션 고주파용 압전 스위칭 소자
FR2835981B1 (fr) * 2002-02-13 2005-04-29 Commissariat Energie Atomique Microresonateur mems a ondes acoustiques de volume accordable
KR100616508B1 (ko) * 2002-04-11 2006-08-29 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
JP2004072715A (ja) * 2002-06-11 2004-03-04 Murata Mfg Co Ltd 圧電薄膜共振子、圧電フィルタ、およびそれを有する電子部品
US7276994B2 (en) * 2002-05-23 2007-10-02 Murata Manufacturing Co., Ltd. Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter
JP3769701B2 (ja) * 2002-07-05 2006-04-26 日本電信電話株式会社 超音波センサ
JP4075503B2 (ja) * 2002-07-30 2008-04-16 ソニー株式会社 マイクロマシンおよびその製造方法
JP4189637B2 (ja) * 2002-09-19 2008-12-03 日本電気株式会社 フィルタ、複合フィルタ、それらを搭載したフィルタ実装体、集積回路チップ、電子機器およびそれらの周波数特性変更方法
US6741147B2 (en) * 2002-09-30 2004-05-25 Agere Systems Inc. Method and apparatus for adjusting the resonant frequency of a thin film resonator
JP4121502B2 (ja) * 2002-10-03 2008-07-23 シャープ株式会社 マイクロ共振装置、マイクロフィルタ装置、マイクロ発振器および無線通信機器
FR2852165A1 (fr) 2003-03-06 2004-09-10 St Microelectronics Sa Procede de realisation d'un microresonateur piezolectrique accordable
US7245897B2 (en) * 2003-03-10 2007-07-17 Intel Corporation Using an electroacoustic resonator
JP4513366B2 (ja) 2003-03-25 2010-07-28 パナソニック株式会社 機械共振器、フィルタおよび電気回路
KR100599083B1 (ko) 2003-04-22 2006-07-12 삼성전자주식회사 캔틸레버 형태의 압전 박막 공진 소자 및 그 제조방법
US7994877B1 (en) * 2008-11-10 2011-08-09 Hrl Laboratories, Llc MEMS-based quartz hybrid filters and a method of making the same
US8766745B1 (en) 2007-07-25 2014-07-01 Hrl Laboratories, Llc Quartz-based disk resonator gyro with ultra-thin conductive outer electrodes and method of making same
US20040227578A1 (en) * 2003-05-14 2004-11-18 Miikka Hamalainen Acoustic resonance-based frequency synthesizer using at least one bulk acoustic wave (BAW) or thin film bulk acoustic wave (FBAR) device
US7217582B2 (en) * 2003-08-29 2007-05-15 Rochester Institute Of Technology Method for non-damaging charge injection and a system thereof
US7287328B2 (en) * 2003-08-29 2007-10-30 Rochester Institute Of Technology Methods for distributed electrode injection
KR100542557B1 (ko) * 2003-09-09 2006-01-11 삼성전자주식회사 박막 공진기와, 박막 공진기의 제조 방법 및 박막공진기를 구비하는 필터
KR101130145B1 (ko) * 2003-10-06 2012-03-28 엔엑스피 비 브이 공진기 구조체, 필터, 공진기 구조체의 제조 방법과 이들을사용하는 송/수신기
KR100555762B1 (ko) * 2003-10-07 2006-03-03 삼성전자주식회사 에어갭형 박막 벌크 음향 공진기 및 그 제조방법, 이를이용한 필터 및 듀플렉서
US7372346B2 (en) * 2003-12-24 2008-05-13 Interuniversitair Microelektronica Centrum (Imec) Acoustic resonator
EP1548768B1 (en) 2003-12-24 2012-02-22 Imec Micromachined film bulk acoustic resonator
FR2864951B1 (fr) * 2004-01-14 2006-03-31 Suisse Electronique Microtech Dispositif de type microsysteme electromecanique a film mince piezoelectrique
JP3945486B2 (ja) * 2004-02-18 2007-07-18 ソニー株式会社 薄膜バルク音響共振子およびその製造方法
US8581308B2 (en) * 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
KR100622955B1 (ko) * 2004-04-06 2006-09-18 삼성전자주식회사 박막 벌크 음향 공진기 및 그 제조방법
US7514759B1 (en) * 2004-04-19 2009-04-07 Hrl Laboratories, Llc Piezoelectric MEMS integration with GaN technology
JP4373949B2 (ja) * 2004-04-20 2009-11-25 株式会社東芝 薄膜圧電共振器及びその製造方法
US7960900B2 (en) * 2004-06-14 2011-06-14 Stmicroelectronics S.A. Assembly of a microswitch and of an acoustic resonator
JP2008522492A (ja) * 2004-11-20 2008-06-26 センテラ インコーポレイテッド 高周波信号放出装置
WO2006070616A1 (ja) * 2004-12-28 2006-07-06 Murata Manufacturing Co., Ltd. 平衡－不平衡型フィルタモジュールおよび通信装置
JP4622574B2 (ja) * 2005-02-21 2011-02-02 株式会社デンソー 超音波素子
WO2006117709A2 (en) 2005-05-02 2006-11-09 Nxp B.V. Capacitive rf-mems device with integrated decoupling capacitor
US20070074731A1 (en) * 2005-10-05 2007-04-05 Nth Tech Corporation Bio-implantable energy harvester systems and methods thereof
US7623007B2 (en) * 2005-10-19 2009-11-24 Panasonic Corporation Device including piezoelectric thin film and a support having a vertical cross-section with a curvature
US7429904B2 (en) * 2005-10-28 2008-09-30 Avago Technologies Wireless Ip (Singapore) Pte Ltd Spread-spectrum radio utilizing MEMS components
US20070103645A1 (en) * 2005-11-01 2007-05-10 Seiko Epson Corporation Projector
US7414350B1 (en) * 2006-03-03 2008-08-19 Skyworks Solutions, Inc. Acoustic mirror structure for a bulk acoustic wave structure and method for fabricating same
US7986198B2 (en) * 2006-08-03 2011-07-26 Panasonic Corporation Frequency-variable acoustic thin film resonator, filter and communication apparatus using the same
KR100787233B1 (ko) * 2006-11-16 2007-12-21 삼성전자주식회사 집적 소자 및 그 제조 방법
FR2911448B1 (fr) * 2007-01-16 2009-07-10 St Microelectronics Sa Resonateur acoustique en volume a frequence de resonance reglable et utilisation d'un tel resonateur dans le domaine de la telephonie
EP1976015B1 (en) * 2007-03-26 2014-09-10 Semiconductor Energy Laboratory Co., Ltd. Switching element, method for manufacturing the same, and display device including switching element
US8258894B2 (en) * 2007-05-31 2012-09-04 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Coupled resonator filter with a filter section
US7825749B2 (en) * 2007-05-31 2010-11-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Integrated coupled resonator filter and bulk acoustic wave devices
EP2171845A4 (en) * 2007-07-11 2014-08-27 Avago Technologies Wireless Ip METHOD FOR FORMING AN ACOUSTIC MIRROR WITH REDUCED METAL LAYERING RANGE AND RELATED STRUCTURE
US10266398B1 (en) 2007-07-25 2019-04-23 Hrl Laboratories, Llc ALD metal coatings for high Q MEMS structures
KR101378510B1 (ko) * 2007-11-01 2014-03-28 삼성전자주식회사 Ｆｂａｒ를 이용한 튜너블 공진기
JP5441095B2 (ja) * 2008-01-31 2014-03-12 太陽誘電株式会社 弾性波デバイス、デュープレクサ、通信モジュール、および通信装置
US8151640B1 (en) 2008-02-05 2012-04-10 Hrl Laboratories, Llc MEMS on-chip inertial navigation system with error correction
US7802356B1 (en) 2008-02-21 2010-09-28 Hrl Laboratories, Llc Method of fabricating an ultra thin quartz resonator component
JP5136134B2 (ja) * 2008-03-18 2013-02-06 ソニー株式会社 バンドパスフィルタ装置、その製造方法、テレビジョンチューナおよびテレビジョン受信機
US7777595B2 (en) * 2008-04-30 2010-08-17 John Mezzalingua Associates, Inc. Multi-channel filter assemblies
JP5505596B2 (ja) * 2008-06-18 2014-05-28 セイコーエプソン株式会社 共振回路、発振回路、フィルタ回路及び電子装置
US7830227B1 (en) * 2008-09-18 2010-11-09 Hrl Laboratories, Llc Device having integrated MEMS switches and filters
FR2946970B1 (fr) * 2009-06-23 2011-07-15 Commissariat Energie Atomique Dispositif micromecanique d'amplification d'un mouvement vibratoire
US8176607B1 (en) 2009-10-08 2012-05-15 Hrl Laboratories, Llc Method of fabricating quartz resonators
US8384497B2 (en) * 2009-12-18 2013-02-26 Hao Zhang Piezoelectric resonator structure having an interference structure
US20110304412A1 (en) * 2010-06-10 2011-12-15 Hao Zhang Acoustic Wave Resonators and Methods of Manufacturing Same
US8912711B1 (en) 2010-06-22 2014-12-16 Hrl Laboratories, Llc Thermal stress resistant resonator, and a method for fabricating same
WO2012073829A1 (ja) * 2010-11-30 2012-06-07 株式会社 村田製作所 バルク弾性波共振子
EP2922204A1 (en) * 2010-12-10 2015-09-23 Peregrine Semiconductor Corporation Temperature and process compensated tunable acoustic wave filter
US9300038B2 (en) 2010-12-10 2016-03-29 Peregrine Semiconductor Corporation Method, system, and apparatus for resonator circuits and modulating resonators
FR2969428B1 (fr) * 2010-12-21 2013-01-04 St Microelectronics Sa Commutateur electronique et appareil de communication incluant un tel commutateur
JP2012195829A (ja) * 2011-03-17 2012-10-11 Seiko Epson Corp 発振回路
JP2012222718A (ja) * 2011-04-13 2012-11-12 Seiko Epson Corp 発振器
US9054671B2 (en) * 2011-11-09 2015-06-09 International Business Machines Corporation Tunable filter structures and design structures
KR101856060B1 (ko) * 2011-12-01 2018-05-10 삼성전자주식회사 체적 음향 공진기
US9048809B2 (en) * 2012-01-03 2015-06-02 International Business Machines Corporation Method of manufacturing switchable filters
US9599470B1 (en) 2013-09-11 2017-03-21 Hrl Laboratories, Llc Dielectric high Q MEMS shell gyroscope structure
WO2015084456A2 (en) * 2013-09-18 2015-06-11 The Regents Of The University Of California Tunable q resonator
US9977097B1 (en) 2014-02-21 2018-05-22 Hrl Laboratories, Llc Micro-scale piezoelectric resonating magnetometer
US9991863B1 (en) 2014-04-08 2018-06-05 Hrl Laboratories, Llc Rounded and curved integrated tethers for quartz resonators
US9608594B2 (en) * 2014-05-29 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitive coupled resonator device with air-gap separating electrode and piezoelectric layer
US10308505B1 (en) 2014-08-11 2019-06-04 Hrl Laboratories, Llc Method and apparatus for the monolithic encapsulation of a micro-scale inertial navigation sensor suite
US10031191B1 (en) 2015-01-16 2018-07-24 Hrl Laboratories, Llc Piezoelectric magnetometer capable of sensing a magnetic field in multiple vectors
US10175307B1 (en) 2016-01-15 2019-01-08 Hrl Laboratories, Llc FM demodulation system for quartz MEMS magnetometer
DE102018118701B3 (de) * 2018-08-01 2019-10-17 RF360 Europe GmbH BAW-Resonator mit verbesserter Verbindung der oberen Elektrode
DE102018125498B4 (de) * 2018-10-15 2020-04-23 RF360 Europe GmbH Elektroakustisches HF-Filter mit verbesserter Leistung und Multiplexer-Komponente, die ein HF-Filter umfasst
KR102142056B1 (ko) * 2018-11-19 2020-08-06 전북대학교산학협력단 가변 공진 특성을 갖는 체적탄성파 공진기 및 그 방법
WO2020215611A1 (zh) * 2019-04-26 2020-10-29 中北大学 多参数声表面波传感装置、制备方法及飞行器监测系统
US10979019B2 (en) * 2019-06-11 2021-04-13 Globalfoundries Singapore Pte. Ltd. Reconfigurable resonator devices, methods of forming reconfigurable resonator devices, and operations thereof
US11063571B2 (en) * 2019-07-25 2021-07-13 Zhuhai Crystal Resonance Technologies Co., Ltd. Packaged electronic components
CN111756351B (zh) * 2020-04-03 2021-08-10 诺思(天津)微系统有限责任公司 体声波谐振器及其制造方法、滤波器和电子设备
CN111786645B (zh) * 2020-05-07 2021-04-16 诺思(天津)微系统有限责任公司 体声波谐振器、滤波器、电子设备和调整机电耦合系数的方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189307A (ja) 1984-03-09 1985-09-26 Toshiba Corp 圧電薄膜共振器およびその製造方法
JPS61280104A (ja) 1985-06-05 1986-12-10 Murata Mfg Co Ltd 誘電体共振器装置
JPS63187713A (ja) * 1987-01-29 1988-08-03 Toshiba Corp 集積型圧電薄膜機能素子
JPH07109971B2 (ja) 1989-02-20 1995-11-22 株式会社村田製作所 フイルタ装置
JP3068140B2 (ja) * 1989-09-07 2000-07-24 株式会社東芝 圧電薄膜共振子
US5260596A (en) * 1991-04-08 1993-11-09 Motorola, Inc. Monolithic circuit with integrated bulk structure resonator
US5382930A (en) 1992-12-21 1995-01-17 Trw Inc. Monolithic multipole filters made of thin film stacked crystal filters
US5373268A (en) 1993-02-01 1994-12-13 Motorola, Inc. Thin film resonator having stacked acoustic reflecting impedance matching layers and method
ATE156934T1 (de) * 1993-02-18 1997-08-15 Siemens Ag Mikromechanisches relais mit hybridantrieb
JPH06350371A (ja) * 1993-06-10 1994-12-22 Matsushita Electric Ind Co Ltd 圧電デバイスの製造方法
US5619061A (en) * 1993-07-27 1997-04-08 Texas Instruments Incorporated Micromechanical microwave switching
US5446306A (en) 1993-12-13 1995-08-29 Trw Inc. Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR)
JPH07226648A (ja) * 1994-02-15 1995-08-22 Murata Mfg Co Ltd 共振周波数可変型共振子
US5696491A (en) * 1995-06-07 1997-12-09 Regents Of The University Of California Self-excited microelectromechanical device
US5596239A (en) 1995-06-29 1997-01-21 Motorola, Inc. Enhanced quality factor resonator
US5714917A (en) 1996-10-02 1998-02-03 Nokia Mobile Phones Limited Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation
US5873154A (en) 1996-10-17 1999-02-23 Nokia Mobile Phones Limited Method for fabricating a resonator having an acoustic mirror
US5872493A (en) 1997-03-13 1999-02-16 Nokia Mobile Phones, Ltd. Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
US6049702A (en) * 1997-12-04 2000-04-11 Rockwell Science Center, Llc Integrated passive transceiver section
US6312816B1 (en) * 1998-02-20 2001-11-06 Advanced Technology Materials, Inc. A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
FI106894B (sv) * 1998-06-02 2001-04-30 Nokia Mobile Phones Ltd Resonatorstrukturer

Also Published As

Publication number Publication date
DE69927551T2 (de) 2006-05-18
EP0963000B1 (en) 2005-10-05
FI981415A0 (sv) 1998-06-18
EP0963000A3 (en) 2001-05-16
DE69927551D1 (de) 2005-11-10
US6204737B1 (en) 2001-03-20
FI981415A (sv) 1999-12-03
JP2000030595A (ja) 2000-01-28
CN1127168C (zh) 2003-11-05
EP0963000A2 (en) 1999-12-08
CN1237828A (zh) 1999-12-08

Similar Documents

Publication Publication Date Title
FI108583B (sv) Resonatorstrukturer
FI106894B (sv) Resonatorstrukturer
US6278342B1 (en) Balanced filter structure utilizing bulk acoustic wave resonators having different areas
US6741145B2 (en) Filter structure and arrangement comprising piezoelectric resonators
US7135940B2 (en) Tunable filter and portable telephone
US6741146B2 (en) Filter structure comprising piezoelectric resonators
JP2008172713A (ja) 圧電薄膜共振器および圧電薄膜共振器フィルタおよびその製造方法
KR100666693B1 (ko) 모놀리식 듀플렉서
KR100555762B1 (ko) 에어갭형 박막 벌크 음향 공진기 및 그 제조방법, 이를이용한 필터 및 듀플렉서
WO2004066495A1 (en) Circuit arrangement providing impedance transformation
US20060273866A1 (en) Film bulk acoustic wave resonator with differential topology
Kaiser The potential of MEMS components for re-configurable RF interfaces in mobile communication terminals
Young Micromachining for rf Communications
Singhal et al. Rf-Mems Components In Mobile Communication Terminal

Legal Events

Date Code Title Description
PC Transfer of assignment of patent

Owner name: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LT

Free format text: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.

PC Transfer of assignment of patent

Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD

MM Patent lapsed