FI108375B - F÷rfarande f÷r framstõllning av isolerande oxidtunnfilmer - Google Patents
F÷rfarande f÷r framstõllning av isolerande oxidtunnfilmer Download PDFInfo
- Publication number
- FI108375B FI108375B FI981959A FI981959A FI108375B FI 108375 B FI108375 B FI 108375B FI 981959 A FI981959 A FI 981959A FI 981959 A FI981959 A FI 981959A FI 108375 B FI108375 B FI 108375B
- Authority
- FI
- Finland
- Prior art keywords
- process according
- hydrocarbon
- cyclopentadienyl
- films
- ligand
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910052788 barium Inorganic materials 0.000 claims abstract description 25
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 22
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims abstract description 17
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 42
- 239000004215 Carbon black (E152) Substances 0.000 claims description 17
- 229930195733 hydrocarbon Natural products 0.000 claims description 17
- 239000007858 starting material Substances 0.000 claims description 17
- 150000002430 hydrocarbons Chemical class 0.000 claims description 15
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 14
- 239000003446 ligand Substances 0.000 claims description 13
- -1 titanium halide Chemical class 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 125000004122 cyclic group Chemical group 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 6
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 125000004429 atom Chemical group 0.000 claims description 5
- 230000007935 neutral effect Effects 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- 150000003609 titanium compounds Chemical class 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 125000003342 alkenyl group Chemical group 0.000 claims description 4
- 150000004703 alkoxides Chemical class 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 4
- 125000005842 heteroatom Chemical group 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 229920000768 polyamine Polymers 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 125000001424 substituent group Chemical group 0.000 claims description 4
- 125000000446 sulfanediyl group Chemical group *S* 0.000 claims description 4
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 3
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Natural products C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 150000007942 carboxylates Chemical class 0.000 claims description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 2
- 125000003454 indenyl group Chemical group C1(C=CC2=CC=CC=C12)* 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 2
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 2
- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 claims description 2
- 229920000570 polyether Polymers 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- 150000003568 thioethers Chemical class 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 claims 1
- 150000001721 carbon Chemical group 0.000 claims 1
- 239000002243 precursor Substances 0.000 abstract description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 9
- 239000012528 membrane Substances 0.000 description 7
- 229910002370 SrTiO3 Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 5
- 238000006557 surface reaction Methods 0.000 description 5
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 150000003438 strontium compounds Chemical class 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- XWEUUHFMEWZZNX-UHFFFAOYSA-N C(C)(C)C1=C(C(C=C1)(C(C)C)[Sr]C1(C(=C(C=C1)C(C)C)C(C)C)C(C)C)C(C)C Chemical compound C(C)(C)C1=C(C(C=C1)(C(C)C)[Sr]C1(C(=C(C=C1)C(C)C)C(C)C)C(C)C)C(C)C XWEUUHFMEWZZNX-UHFFFAOYSA-N 0.000 description 1
- QUJWBBABMDGOEA-UHFFFAOYSA-N CC1=C(C(=C(C1(C)[Ba]C1(C(=C(C(=C1C)C)C)C)C)C)C)C Chemical compound CC1=C(C(=C(C1(C)[Ba]C1(C(=C(C(=C1C)C)C)C)C)C)C)C QUJWBBABMDGOEA-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Claims (16)
1. Förfarandeförframställningavisolerandeoxidtunnfilmer, kännetecknat 5 av att filmema framställs medelst en ALE-process genom användning av cyklopentadienylföreningar av strontium och/eller barium som utgängsämne tillsammans med en eller ett flertal flyktiga titanföreningar samt ett reaktivt syreutgängsämne. 10
2. Förfarande enligt patentkrav 1, kännetecknat av att 1-10, företrädesvis 1 - 2, likadana odlingscykler kommer efter varandra, när en odlingscykel bildas av inmatning av Ba, Sr eller en flyktig titanförening, inertsköljning, inmatning av syreutgängsämne och en andra inertsköljning. 15
3. Förfarande enligt patentkrav 1 eller 2, kännetecknat av att cykelförhällandet mellan jordalkalimetallföreningen och titanföreningen är 0,8 - 1,2.
4. Förfarande enligt nägot av patentkraven 1-3, kännetecknat av att den 20 flyktiga titanföreningen utgörs av titanhalid, -alkoxid, -cyklopentadienyl eller I I I ,' , -alkylamid. I 1 1 • · · • · · • · » ‘ . 5. Förfarande enligt nägot av de föregäende patentkraven, kännetecknat av « · . . att formeln för utgängsämnet är M(Cp)2 eller M(Cp)2Ln, väri • · · 25 • · « * « 4 - M stär för Sr eller Ba, “Cp stär för en fusionerad eller enskild cyklopentadienylgrupp med • · . 1 · ·. formen Cp ’RmH5_m, väri - m är ett heltal 0-5, och
30. R stär för en kolvätegrupp, kolvätegruppema är antingen likadana « · eller avviker ffän varandra, Cp-gruppema är antingen likadana eller olika, 4 · 1Λ 1Q8 375 Ιο - Ln stär för en neutral adduktligand, som binds till en metall med antingen en eller ett flertal av sina atomer.
5. Sr- och/eller Ba-utgängsämnet har formen M(Cp)X eller M(Cp)XLn, väri - M stär för Sr eller Ba, - Cp stär för en fiisionerad eller enskild cyklopentadienylgrupp Cp’RmH5-m, väri -m är ett heltal 0-5, och
6. Förfarandeenligtnägotavpatentkraven 1-4, kännetecknatavatt
7. Förfarande enligt patentkrav 5 eller 6, kännetecknat avatt cyklopentadienylgruppen utgörs av cyklopentadienyl, pentametylcyklopentadienyl, triisopropylcyklopentadienyl, indenyl eller fluorenyl. 20
8. Förfarande enligt patentkrav 5 eller 6, kännetecknat avatt Cp-gruppema ingär i samma molekyl.
9. Förfarande enligt patentkrav 8, kännetecknat av att bron mellan tvä Cp- 25 grupper bildas av en substituerad eller osubstituerad Q - Ce - kolkedja.
10. Förfarande enligt patentkrav 9, kännetecknat av att den brobildande kolkedjan innehäller en heteroatom, som utgörs av kisel, kväve, fosfor, selen eller svavel. 30
10 -R stär för en kolvätegrupp, R:ama är antingen likadana eller avviker frän varandra, - X stär för nägon annan -1 - värdig ligand än Cp, och - Ln stär för en neutral adduktligand, som binds till en metall antingen med en eller ett flertal av sina atomer. 15
11. Förfarande enligt patentkrav 5 eller 6, kännetecknat av att R utgörs av en substituerad eller osubstituerad, cyklisk, rak eller förgrenad, alkyl-, alkenyl-, aryl-, alkylaryl-, arylalkyl-, alkoxy-, tio-, amino-, cyano- eller silylgrupp. 108375
12. Förfarandeenligtpatentkrav5 eller6, kännetecknat avattdenneutrala adduktliganden L utgörs av 5 (i) kolväte, (ii) syrehaltigt kolväte, (iii) kvävehaltigt kolväte, (iv) svavelhaltigt kolväte, (v) fosforhaltigt kolväte, 10 (vi) arsenikhaltigt kolväte, (vii) selenhaltigt kolväte och/eller (viii) tellurhaltigt kolväte.
13. Förfarande enligt patentkrav 5 eller 6, kännetecknat avattL utgörs av 15 (a) amin eller polyamin, (b) bipyridin, (c) en ligand, som beskrivs med formeln
20 CV) VJ i vilken formel G star för -O-, -S- eller -NR1-, väri R1 betecknar väte eller en substituerad eller osubstituerad, cyklisk, rak eller förgrenad, alkyl-, alkenyl-, aryl-, alkylaryl-, 25 arylalkyl-, alkoxy-, tio-, cyano- eller silylgrupp och varje kolatom i en ring enligt formeln uppvisar en R*-liknande substituent, vilka antingen är likadana eller avviker ffän varandra, 30 (d) eter eller (e) tioeter. 108375
14. Förfarande enligt patentkrav 5 eller 6, väri L betecknar eter, polyeter, amin, polyamin, bipyridin eller tetrahydrofuran.
15. Förfarande enligt patentkrav 6, kännetecknat avattX betecknar β- 5 diketonat eller detsamma motsvarande svavel eller en kväveforening, alkyl, halid, amid, alkoxid, karboxylat eller en Schiffs bas.
16. Förfarande enligt nägot av de foregäende patentkraven, kännetecknat av att filmodlingen sker vid en temperatur av 250 - 300°C och efter odlingen utförs 10 en eftervärmning vid en temperatur av 500 °C. • · · • · · • · · »·♦** • < • 1 • 1 1 « · · · • · ·
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI981959A FI108375B (sv) | 1998-09-11 | 1998-09-11 | F÷rfarande f÷r framstõllning av isolerande oxidtunnfilmer |
| AU57483/99A AU5748399A (en) | 1998-09-11 | 1999-09-13 | Method for growing oxide thin films containing barium and strontium |
| KR1020017003180A KR100556088B1 (ko) | 1998-09-11 | 1999-09-13 | 바륨 및 스트론튬을 함유하는 산화 박막의 성장 방법 |
| PCT/FI1999/000741 WO2000015865A1 (en) | 1998-09-11 | 1999-09-13 | Method for growing oxide thin films containing barium and strontium |
| JP2000570387A JP4514337B6 (ja) | 1998-09-11 | 1999-09-13 | バリウムとストロンチウムとを含有する酸化物薄膜を成長させる方法 |
| US09/787,062 US7108747B1 (en) | 1998-09-11 | 1999-09-13 | Method for growing oxide thin films containing barium and strontium |
| US11/864,677 US8685165B2 (en) | 1998-09-11 | 2007-09-28 | Metal oxide films |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI981959A FI108375B (sv) | 1998-09-11 | 1998-09-11 | F÷rfarande f÷r framstõllning av isolerande oxidtunnfilmer |
| FI981959 | 1998-09-11 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI981959A0 FI981959A0 (sv) | 1998-09-11 |
| FI981959A FI981959A (sv) | 2000-03-12 |
| FI108375B true FI108375B (sv) | 2002-01-15 |
Family
ID=8552472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI981959A FI108375B (sv) | 1998-09-11 | 1998-09-11 | F÷rfarande f÷r framstõllning av isolerande oxidtunnfilmer |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7108747B1 (sv) |
| KR (1) | KR100556088B1 (sv) |
| AU (1) | AU5748399A (sv) |
| FI (1) | FI108375B (sv) |
| WO (1) | WO2000015865A1 (sv) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8685165B2 (en) | 1998-09-11 | 2014-04-01 | Asm International N.V. | Metal oxide films |
| US9062390B2 (en) | 2011-09-12 | 2015-06-23 | Asm International N.V. | Crystalline strontium titanate and methods of forming the same |
| US9365926B2 (en) | 2010-02-25 | 2016-06-14 | Asm International N.V. | Precursors and methods for atomic layer deposition of transition metal oxides |
Families Citing this family (78)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI108375B (sv) | 1998-09-11 | 2002-01-15 | Asm Microchemistry Oy | F÷rfarande f÷r framstõllning av isolerande oxidtunnfilmer |
| FI117979B (sv) | 2000-04-14 | 2007-05-15 | Asm Int | Förfarande för framställning av oxidtunnfilmer |
| US6596343B1 (en) * | 2000-04-21 | 2003-07-22 | Applied Materials, Inc. | Method and apparatus for processing semiconductor substrates with hydroxyl radicals |
| EP1292970B1 (en) * | 2000-06-08 | 2011-09-28 | Genitech Inc. | Thin film forming method |
| US6969539B2 (en) | 2000-09-28 | 2005-11-29 | President And Fellows Of Harvard College | Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide |
| US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
| US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6811814B2 (en) | 2001-01-16 | 2004-11-02 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7563715B2 (en) | 2005-12-05 | 2009-07-21 | Asm International N.V. | Method of producing thin films |
| US7491634B2 (en) * | 2006-04-28 | 2009-02-17 | Asm International N.V. | Methods for forming roughened surfaces and applications thereof |
| US9139906B2 (en) | 2001-03-06 | 2015-09-22 | Asm America, Inc. | Doping with ALD technology |
| US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| KR100474847B1 (ko) * | 2001-05-07 | 2005-03-08 | 삼성전자주식회사 | 다성분계 박막 및 그 형성 방법 |
| KR20030000423A (ko) * | 2001-06-25 | 2003-01-06 | 삼성전자 주식회사 | Ｉｖ족 금속 전구체를 이용한 원자층 증착방법 |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| JP2003124460A (ja) * | 2001-10-15 | 2003-04-25 | Atsushi Ogura | ゲート酸化膜、素子、ゲート酸化膜形成方法、ゲート酸化膜形成材料 |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| KR100449028B1 (ko) * | 2002-03-05 | 2004-09-16 | 삼성전자주식회사 | 원자층 증착법을 이용한 박막 형성방법 |
| US7601225B2 (en) * | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
| TW200408323A (en) * | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high k metal oxides |
| GB2399568B (en) * | 2003-03-17 | 2007-03-21 | Epichem Ltd | Precursors for deposition of metal oxide layers or films |
| US7285308B2 (en) | 2004-02-23 | 2007-10-23 | Advanced Technology Materials, Inc. | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium |
| US7087497B2 (en) | 2004-03-04 | 2006-08-08 | Applied Materials | Low-thermal-budget gapfill process |
| KR100617883B1 (ko) * | 2005-01-13 | 2006-09-11 | 주식회사 아이피에스 | Ｅｃｔｄｍａｔ를 이용한 박막증착방법 |
| KR101019293B1 (ko) | 2005-11-04 | 2011-03-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마-강화 원자층 증착 장치 및 방법 |
| KR20140139636A (ko) * | 2006-03-10 | 2014-12-05 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물 |
| EP2029790A1 (en) * | 2006-06-02 | 2009-03-04 | L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing |
| EP2066825A1 (en) | 2006-09-22 | 2009-06-10 | L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method for the deposition of a ruthenium containing film |
| US8795771B2 (en) | 2006-10-27 | 2014-08-05 | Sean T. Barry | ALD of metal-containing films using cyclopentadienyl compounds |
| US8524931B2 (en) | 2007-01-17 | 2013-09-03 | Advanced Technology Materials, Inc. | Precursor compositions for ALD/CVD of group II ruthenate thin films |
| JP5095230B2 (ja) * | 2007-01-24 | 2012-12-12 | 東京エレクトロン株式会社 | ＳｒＴｉＯ３膜の成膜方法およびコンピュータ読取可能な記憶媒体 |
| US7892964B2 (en) * | 2007-02-14 | 2011-02-22 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
| WO2008102320A2 (en) | 2007-02-21 | 2008-08-28 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Methods for forming a ruthenium-based film on a substrate |
| WO2009012341A2 (en) * | 2007-07-16 | 2009-01-22 | Advancaed Technology Materials, Inc. | Group iv complexes as cvd and ald precursors for forming metal-containing thin films |
| US8455049B2 (en) * | 2007-08-08 | 2013-06-04 | Advanced Technology Materials, Inc. | Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition |
| JP5678252B2 (ja) * | 2007-09-04 | 2015-02-25 | 東京エレクトロン株式会社 | Ｓｒ−Ｔｉ−Ｏ系膜の成膜方法 |
| WO2009057058A1 (en) * | 2007-10-29 | 2009-05-07 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Alkaline earth metal containing precursor solutions |
| WO2009106433A1 (en) | 2008-02-27 | 2009-09-03 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ald) process |
| WO2009116004A2 (en) | 2008-03-19 | 2009-09-24 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Alkali earth metal precursors for depositing calcium and strontium containing films |
| WO2009118708A1 (en) * | 2008-03-26 | 2009-10-01 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Deposition of ternary oxide films containing ruthenium and alkali earth metals |
| US8545936B2 (en) | 2008-03-28 | 2013-10-01 | Asm International N.V. | Methods for forming carbon nanotubes |
| US8383525B2 (en) | 2008-04-25 | 2013-02-26 | Asm America, Inc. | Plasma-enhanced deposition process for forming a metal oxide thin film and related structures |
| TW200949939A (en) * | 2008-05-23 | 2009-12-01 | Sigma Aldrich Co | High-k dielectric films and methods of producing using titanium-based β -diketonate precursors |
| TWI467045B (zh) * | 2008-05-23 | 2015-01-01 | Sigma Aldrich Co | 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法 |
| US8343583B2 (en) | 2008-07-10 | 2013-01-01 | Asm International N.V. | Method for vaporizing non-gaseous precursor in a fluidized bed |
| US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
| US20100072531A1 (en) * | 2008-09-22 | 2010-03-25 | Imec | Method for Forming a Memory Cell Comprising a Capacitor Having a Strontium Titaniumoxide Based Dielectric Layer and Devices Obtained Thereof |
| US20100136313A1 (en) * | 2008-12-01 | 2010-06-03 | Asm Japan K.K. | Process for forming high resistivity thin metallic film |
| US8330136B2 (en) | 2008-12-05 | 2012-12-11 | Advanced Technology Materials, Inc. | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
| US8663735B2 (en) | 2009-02-13 | 2014-03-04 | Advanced Technology Materials, Inc. | In situ generation of RuO4 for ALD of Ru and Ru related materials |
| JP2012520943A (ja) | 2009-03-17 | 2012-09-10 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | ルテニウムを補助金属種と共に堆積させるための方法及び組成物 |
| US8859785B2 (en) * | 2009-05-29 | 2014-10-14 | Air Products And Chemicals, Inc. | Volatile group 2 metal precursors |
| WO2010141668A2 (en) * | 2009-06-03 | 2010-12-09 | Intermolecular, Inc. | Methods of forming strontium titanate films |
| US20110020547A1 (en) * | 2009-07-21 | 2011-01-27 | Julien Gatineau | High dielectric constant films deposited at high temperature by atomic layer deposition |
| JP2010056582A (ja) * | 2009-12-10 | 2010-03-11 | Tokyo Electron Ltd | 誘電体膜の形成方法 |
| US8859047B2 (en) | 2010-02-23 | 2014-10-14 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of ruthenium tetroxide as a precursor and reactant for thin film depositions |
| US9012876B2 (en) | 2010-03-26 | 2015-04-21 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
| US8357614B2 (en) | 2010-04-19 | 2013-01-22 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Ruthenium-containing precursors for CVD and ALD |
| WO2011146913A2 (en) | 2010-05-21 | 2011-11-24 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| US9373677B2 (en) | 2010-07-07 | 2016-06-21 | Entegris, Inc. | Doping of ZrO2 for DRAM applications |
| EP2434531B1 (en) | 2010-09-28 | 2019-12-04 | IMEC vzw | Method for manufacturing of a metal-insulator-metal capacitor |
| JP2012116741A (ja) * | 2010-11-12 | 2012-06-21 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物複合基板 |
| JP2012166958A (ja) * | 2011-02-09 | 2012-09-06 | Ohara Inc | 酸化物単結晶の製造方法 |
| US9023427B2 (en) | 2012-05-16 | 2015-05-05 | Asm Ip Holding B.V. | Methods for forming multi-component thin films |
| WO2013177326A1 (en) | 2012-05-25 | 2013-11-28 | Advanced Technology Materials, Inc. | Silicon precursors for low temperature ald of silicon-based thin-films |
| US9640757B2 (en) | 2012-10-30 | 2017-05-02 | Entegris, Inc. | Double self-aligned phase change memory device structure |
| WO2014124056A1 (en) | 2013-02-08 | 2014-08-14 | Advanced Technology Materials, Inc. | Ald processes for low leakage current and low equivalent oxide thickness bitao films |
| US9663547B2 (en) | 2014-12-23 | 2017-05-30 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films |
| US9499571B2 (en) | 2014-12-23 | 2016-11-22 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films |
| US10121655B2 (en) | 2015-11-20 | 2018-11-06 | Applied Materials, Inc. | Lateral plasma/radical source |
| US10106568B2 (en) | 2016-10-28 | 2018-10-23 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films |
| US10738375B2 (en) | 2016-11-15 | 2020-08-11 | HPVico AB | Hard thin films |
| US11049887B2 (en) | 2017-11-10 | 2021-06-29 | Applied Materials, Inc. | Layer stack for display applications |
| KR102618630B1 (ko) | 2019-10-10 | 2023-12-26 | 삼성에스디아이 주식회사 | 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자 |
| KR102639298B1 (ko) * | 2020-10-30 | 2024-02-20 | 삼성에스디아이 주식회사 | 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE393967B (sv) * | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
| FR2626110A1 (fr) | 1988-01-19 | 1989-07-21 | Thomson Csf | Procede de realisation par epitaxie d'une couche d'un materiau supraconducteur |
| ES2060622T3 (es) * | 1988-06-03 | 1994-12-01 | Ibm | Metodo para la fabricacion de superconductores de elevada tc, que tienen estructura estratificada. |
| US4927670A (en) * | 1988-06-22 | 1990-05-22 | Georgia Tech Research Corporation | Chemical vapor deposition of mixed metal oxide coatings |
| US5225561A (en) | 1990-07-06 | 1993-07-06 | Advanced Technology Materials, Inc. | Source reagent compounds for MOCVD of refractory films containing group IIA elements |
| US5453494A (en) * | 1990-07-06 | 1995-09-26 | Advanced Technology Materials, Inc. | Metal complex source reagents for MOCVD |
| NL9100210A (nl) * | 1991-02-06 | 1992-09-01 | Veg Gasinstituut Nv | Katalysator- of membraan-precursorsystemen, katalysator- of membraan-systemen alsmede werkwijze voor de vervaardiging daarvan. |
| JP3618110B2 (ja) | 1993-08-30 | 2005-02-09 | 株式会社デンソー | エレクトロルミネッセンス素子の製法 |
| US6331325B1 (en) | 1994-09-30 | 2001-12-18 | Texas Instruments Incorporated | Barium strontium titanate (BST) thin films using boron |
| EP0841690B1 (en) | 1996-11-12 | 2006-03-01 | Samsung Electronics Co., Ltd. | Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method |
| KR100269306B1 (ko) * | 1997-07-31 | 2000-10-16 | 윤종용 | 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법 |
| US6020024A (en) * | 1997-08-04 | 2000-02-01 | Motorola, Inc. | Method for forming high dielectric constant metal oxides |
| US5972430A (en) * | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
| US6099904A (en) | 1997-12-02 | 2000-08-08 | Applied Materials, Inc. | Low resistivity W using B2 H6 nucleation step |
| FI108375B (sv) | 1998-09-11 | 2002-01-15 | Asm Microchemistry Oy | F÷rfarande f÷r framstõllning av isolerande oxidtunnfilmer |
| US6583057B1 (en) | 1998-12-14 | 2003-06-24 | Motorola, Inc. | Method of forming a semiconductor device having a layer deposited by varying flow of reactants |
| KR100319884B1 (ko) * | 1999-04-12 | 2002-01-10 | 윤종용 | 반도체소자의 커패시터 및 그 제조방법 |
| US6444592B1 (en) * | 2000-06-20 | 2002-09-03 | International Business Machines Corporation | Interfacial oxidation process for high-k gate dielectric process integration |
| US6420230B1 (en) * | 2000-08-31 | 2002-07-16 | Micron Technology, Inc. | Capacitor fabrication methods and capacitor constructions |
| KR100427030B1 (ko) | 2001-08-27 | 2004-04-14 | 주식회사 하이닉스반도체 | 다성분계 박막의 형성 방법 및 그를 이용한 커패시터의제조 방법 |
-
1998
- 1998-09-11 FI FI981959A patent/FI108375B/sv not_active IP Right Cessation
-
1999
- 1999-09-13 KR KR1020017003180A patent/KR100556088B1/ko active IP Right Grant
- 1999-09-13 US US09/787,062 patent/US7108747B1/en not_active Expired - Lifetime
- 1999-09-13 AU AU57483/99A patent/AU5748399A/en not_active Abandoned
- 1999-09-13 WO PCT/FI1999/000741 patent/WO2000015865A1/en active IP Right Grant
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8685165B2 (en) | 1998-09-11 | 2014-04-01 | Asm International N.V. | Metal oxide films |
| US9365926B2 (en) | 2010-02-25 | 2016-06-14 | Asm International N.V. | Precursors and methods for atomic layer deposition of transition metal oxides |
| US9677173B2 (en) | 2010-02-25 | 2017-06-13 | Asm International N.V. | Precursors and methods for atomic layer deposition of transition metal oxides |
| US10344378B2 (en) | 2010-02-25 | 2019-07-09 | Asm International N.V. | Precursors and methods for atomic layer deposition of transition metal oxides |
| US11555242B2 (en) | 2010-02-25 | 2023-01-17 | Asm International N.V. | Precursors and methods for atomic layer deposition of transition metal oxides |
| US9062390B2 (en) | 2011-09-12 | 2015-06-23 | Asm International N.V. | Crystalline strontium titanate and methods of forming the same |
| US9816203B2 (en) | 2011-09-12 | 2017-11-14 | Asm International N.V. | Crystalline strontium titanate and methods of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4514337B2 (ja) | 2010-07-28 |
| KR20010079799A (ko) | 2001-08-22 |
| FI981959A0 (sv) | 1998-09-11 |
| US7108747B1 (en) | 2006-09-19 |
| KR100556088B1 (ko) | 2006-03-07 |
| JP2002525426A (ja) | 2002-08-13 |
| WO2000015865A1 (en) | 2000-03-23 |
| FI981959A (sv) | 2000-03-12 |
| AU5748399A (en) | 2000-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FI108375B (sv) | F÷rfarande f÷r framstõllning av isolerande oxidtunnfilmer | |
| US8685165B2 (en) | Metal oxide films | |
| Malm et al. | Atomic layer deposition of WO3 thin films using W (CO) 6 and O3 precursors | |
| KR20050059077A (ko) | 고유전율 금속 실리케이트 원자층 증착 | |
| JP5662389B2 (ja) | 循環ｃｖｄ又はａｌｄによる金属酸化物薄膜の調製 | |
| WO2008033436A1 (en) | Systems and methods for forming strontium-and/or barium-containing layers | |
| WO2000037712A1 (en) | Liquid delivery mocvd process for deposition of high frequency dielectric materials | |
| Nilsen et al. | Thin film deposition of lanthanum manganite perovskite by the ALE process | |
| JP2011521479A (ja) | 高ｋ誘電性膜およびチタン系前駆体を用いるその製造方法 | |
| Peng et al. | Metalorganic chemical vapor deposition of ferroelectric Pb (Zr, Ti) O3 thin films | |
| KR100373080B1 (ko) | Ｃ-축 배향 납 게르마네이트 막 및 퇴적방법 | |
| JP2012524406A (ja) | 相変化材料の形成方法ならびに相変化メモリ回路の形成方法 | |
| KR20010039587A (ko) | 에피택셜 성장된 납 게르마네이트 막 및 퇴적 방법 | |
| KR20020037293A (ko) | Ｔａ2Ｏ5 및 높은-ｋ 유전체 원자층 증착법 | |
| KR100441549B1 (ko) | 혼합 용매를 사용한 ｍｏｃｖｄ 강유전성 및 유전성 박막퇴적방법 | |
| JP4514337B6 (ja) | バリウムとストロンチウムとを含有する酸化物薄膜を成長させる方法 | |
| Liu et al. | Thick layer deposition of lead perovskites using diol-based chemical solution approach | |
| US5976624A (en) | Process for producing bismuth compounds, and bismuth compounds | |
| Liu et al. | Metal oxides and metal thin films by atomic layer deposition (ALD), liquid-ALD, and successive ionic layer adsorption and reaction methods for THR applications | |
| KR102615101B1 (ko) | 유기주석 화합물을 포함하는 용액공정용 조성물, 및 이를 이용한 박막의 제조방법 | |
| KR102562274B1 (ko) | 유기 금속 전구체 화합물 | |
| Helbing et al. | Growth of CaS thin films by solid source metalorganic chemical vapor deposition | |
| Liua et al. | Metal oxides and metal thin films by atomic layer deposition (ALD), liquid-ALD, and successive ionic layer adsorption and reaction methods for THR applications | |
| KR100480501B1 (ko) | 유기금속 화학증착법에 의한 ｐｚｔ 박막의 제조방법 | |
| Waser et al. | Chemical deposition methods for ferroelectric thin films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GB | Transfer or assigment of application |
Owner name: MIKROKEMIA OY |
|
| MM | Patent lapsed |