ES8606734A1 - Un dispositivo fotovoltaico formado de multiples zonas de aleaciones de semiconductor depositadas sobre un sustrato - Google Patents

Un dispositivo fotovoltaico formado de multiples zonas de aleaciones de semiconductor depositadas sobre un sustrato

Info

Publication number
ES8606734A1
ES8606734A1 ES531596A ES531596A ES8606734A1 ES 8606734 A1 ES8606734 A1 ES 8606734A1 ES 531596 A ES531596 A ES 531596A ES 531596 A ES531596 A ES 531596A ES 8606734 A1 ES8606734 A1 ES 8606734A1
Authority
ES
Spain
Prior art keywords
band gap
intrinsic region
open circuit
circuit voltage
intrinsic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES531596A
Other languages
English (en)
Other versions
ES531596A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES531596A0 publication Critical patent/ES531596A0/es
Publication of ES8606734A1 publication Critical patent/ES8606734A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

MEJORAS EN UN DISPOSITIVO FOTOVOLTAICO DE MULTIPLES ZONAS DE ALEACIONES DE SEMICONDUCTOR DEPOSITADAS SOBRE UN SUSTRATO. INCLUYE: UNA PAREJA DE REGIONES DE ALEACION SEMI-CONDUCTORA BARNIZADA (158, 162); UN CUERPO (170) DE ALEACION SEMI-CONDUCTORA INTRINSECA, QUE SE ENCUENTRA ENTRE LAS REGIONES DE ALEACION SEMI-CONDUCTORA BARNIZADAS, INCLUYENDO EL CUERPO INTRINSECO UNA PRIMERA REGION INTRINSECA (160A) Y UN ELEMENTO MEJORADOR DEL VOLTAJE DE CIRCUITO ABIERTO, UNA SEGUNDA REGION INTRINSECA (160B) QUE TIENE UN HUECO DE BANDA MAS ANCHO QUE EL HUECO DE BANDA DE LA PRIMERA REGION INTRINSECA, PARA MEJORAR EL VOLTAJE DE CIRCUITO ABIERTO DEL DISPOSITIVO. ESTANDO FORMADA LA ALEACION SEMICONDUCTORA PARA UNA ALEACION AMORFA DE SILICIO Y FLUOR Y/O HIDROGENO.
ES531596A 1983-04-15 1984-04-13 Un dispositivo fotovoltaico formado de multiples zonas de aleaciones de semiconductor depositadas sobre un sustrato Expired ES8606734A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/485,411 US4471155A (en) 1983-04-15 1983-04-15 Narrow band gap photovoltaic devices with enhanced open circuit voltage

Publications (2)

Publication Number Publication Date
ES531596A0 ES531596A0 (es) 1986-04-16
ES8606734A1 true ES8606734A1 (es) 1986-04-16

Family

ID=23928056

Family Applications (1)

Application Number Title Priority Date Filing Date
ES531596A Expired ES8606734A1 (es) 1983-04-15 1984-04-13 Un dispositivo fotovoltaico formado de multiples zonas de aleaciones de semiconductor depositadas sobre un sustrato

Country Status (10)

Country Link
US (1) US4471155A (es)
EP (1) EP0122778B1 (es)
JP (2) JPH065766B2 (es)
KR (1) KR840008541A (es)
AU (1) AU2676884A (es)
BR (1) BR8401736A (es)
CA (1) CA1206242A (es)
DE (1) DE3485274D1 (es)
ES (1) ES8606734A1 (es)
IN (1) IN161137B (es)

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Also Published As

Publication number Publication date
JPS59205770A (ja) 1984-11-21
JP2677503B2 (ja) 1997-11-17
DE3485274D1 (de) 1992-01-02
EP0122778A2 (en) 1984-10-24
CA1206242A (en) 1986-06-17
ES531596A0 (es) 1986-04-16
EP0122778A3 (en) 1986-06-04
AU2676884A (en) 1984-10-18
US4471155A (en) 1984-09-11
KR840008541A (ko) 1984-12-15
EP0122778B1 (en) 1991-11-21
JPH0613638A (ja) 1994-01-21
JPH065766B2 (ja) 1994-01-19
IN161137B (es) 1987-10-10
BR8401736A (pt) 1984-11-20

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