ES544481A0 - Un dispositivo fotovoltaico semiconductor amorfo y mejorado - Google Patents

Un dispositivo fotovoltaico semiconductor amorfo y mejorado

Info

Publication number
ES544481A0
ES544481A0 ES544481A ES544481A ES544481A0 ES 544481 A0 ES544481 A0 ES 544481A0 ES 544481 A ES544481 A ES 544481A ES 544481 A ES544481 A ES 544481A ES 544481 A0 ES544481 A0 ES 544481A0
Authority
ES
Spain
Prior art keywords
amorphous
photovoltaic device
improved semiconductor
semiconductor photovoltaic
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES544481A
Other languages
English (en)
Other versions
ES8609820A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES8609820A1 publication Critical patent/ES8609820A1/es
Publication of ES544481A0 publication Critical patent/ES544481A0/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
ES544481A 1984-06-25 1985-06-24 Un dispositivo fotovoltaico semiconductor amorfo y mejorado Expired ES8609820A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/623,860 US4547621A (en) 1984-06-25 1984-06-25 Stable photovoltaic devices and method of producing same

Publications (2)

Publication Number Publication Date
ES8609820A1 ES8609820A1 (es) 1986-07-16
ES544481A0 true ES544481A0 (es) 1986-07-16

Family

ID=24499680

Family Applications (1)

Application Number Title Priority Date Filing Date
ES544481A Expired ES8609820A1 (es) 1984-06-25 1985-06-24 Un dispositivo fotovoltaico semiconductor amorfo y mejorado

Country Status (9)

Country Link
US (1) US4547621A (es)
EP (1) EP0167323A3 (es)
JP (1) JPH0671090B2 (es)
AU (1) AU4399585A (es)
BR (1) BR8503017A (es)
CA (1) CA1262766A (es)
ES (1) ES8609820A1 (es)
MX (1) MX157839A (es)
ZA (1) ZA854621B (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
US4772933A (en) * 1986-02-03 1988-09-20 General Electric Company Method for compensating operationally-induced defects and semiconductor device made thereby
JPS62234379A (ja) * 1986-04-04 1987-10-14 Kanegafuchi Chem Ind Co Ltd 半導体装置
JP2717583B2 (ja) * 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
AU2003269667A1 (en) * 2002-10-25 2004-05-13 Unaxis Balzers Ltd. Method for producing semi-conducting devices and devices obtained with this method
US8372685B2 (en) * 2006-06-12 2013-02-12 Nanosolar, Inc. Bandgap grading in thin-film devices via solid group IIIA particles
JP5526461B2 (ja) * 2007-03-19 2014-06-18 三洋電機株式会社 光起電力装置
KR101359401B1 (ko) * 2007-06-21 2014-02-10 주성엔지니어링(주) 고효율 박막 태양전지와 그 제조방법 및 제조장치
US8440498B2 (en) 2009-10-28 2013-05-14 Nanosolar, Inc. Thin-film devices formed from solid particles
US9634165B2 (en) * 2009-11-02 2017-04-25 International Business Machines Corporation Regeneration method for restoring photovoltaic cell efficiency
US20110240121A1 (en) * 2010-04-02 2011-10-06 Iowa State University Research Foundation, Inc. Nanocrystalline Superlattice Solar Cell
KR20130042785A (ko) * 2011-10-19 2013-04-29 한국전자통신연구원 태양전지
US9040340B2 (en) * 2011-11-14 2015-05-26 International Business Machines Corporation Temperature grading for band gap engineering of photovoltaic devices
BR112015014071B1 (pt) * 2012-12-13 2022-05-31 Tae Technologies, Inc Dispositivo fotônico magneticamente polarizado
US9722120B2 (en) * 2015-09-14 2017-08-01 International Business Machines Corporation Bandgap grading of CZTS solar cell
US10361331B2 (en) 2017-01-18 2019-07-23 International Business Machines Corporation Photovoltaic structures having multiple absorber layers separated by a diffusion barrier

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4206002A (en) * 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
JPS5688377A (en) * 1979-12-19 1981-07-17 Mitsubishi Electric Corp Solar battery and manufacture thereof
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
SE455554B (sv) * 1980-09-09 1988-07-18 Energy Conversion Devices Inc Fotospenningsdon
JPS5898988A (ja) * 1981-12-08 1983-06-13 Matsushita Electric Ind Co Ltd 太陽光電池
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
JPS58220478A (ja) * 1982-06-17 1983-12-22 Matsushita Electric Ind Co Ltd アモルフアス光電変換素子
JPS5997514A (ja) * 1982-11-22 1984-06-05 Agency Of Ind Science & Technol 太陽電池の製造法
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
JPH0658970B2 (ja) * 1983-08-31 1994-08-03 工業技術院長 半導体装置

Also Published As

Publication number Publication date
US4547621A (en) 1985-10-15
ES8609820A1 (es) 1986-07-16
CA1262766A (en) 1989-11-07
BR8503017A (pt) 1986-03-11
AU4399585A (en) 1986-01-02
ZA854621B (en) 1986-02-26
JPS6113673A (ja) 1986-01-21
MX157839A (es) 1988-12-15
EP0167323A2 (en) 1986-01-08
EP0167323A3 (en) 1986-07-16
JPH0671090B2 (ja) 1994-09-07

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