ES8609820A1 - Un dispositivo fotovoltaico semiconductor amorfo y mejorado - Google Patents

Un dispositivo fotovoltaico semiconductor amorfo y mejorado

Info

Publication number
ES8609820A1
ES8609820A1 ES544481A ES544481A ES8609820A1 ES 8609820 A1 ES8609820 A1 ES 8609820A1 ES 544481 A ES544481 A ES 544481A ES 544481 A ES544481 A ES 544481A ES 8609820 A1 ES8609820 A1 ES 8609820A1
Authority
ES
Spain
Prior art keywords
photo
band gap
responsive layer
photovoltaic devices
producing same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES544481A
Other languages
English (en)
Other versions
ES544481A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES544481A0 publication Critical patent/ES544481A0/es
Publication of ES8609820A1 publication Critical patent/ES8609820A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

DISPOSITIVO FOTOVOLTAICO SEMICONDUCTOR AMORFO Y MODIFICADO. SE COMPONE DE: UN PRIMER ELECTRODO (10); UN SUSTRATO (11) DE ACERO INOXIDABLE O ALUMINIO Y ADYACENTE A LA CELDA (12A); TRES CELDAS POR TIPO P-I-N INDIVIDUALES (12A, 12B, 12C) FORMADAS POR CUERPOS SEMICONDUCTORES AMORFOS QUE CONTIENEN UNA ALEACION DE SILICIO O GERMANIO Y CONSTITUIDAS POR CAPAS SEMICONDUCTORAS DE CONDUCTIVIDAD P(16A, 16B, 16C), CAPAS SEMICONDUCTORAS INTRINSECAS DE ESPACIO DE BANDA GRADUADA (18A, 18B, 18C) QUE TIENE UN GRADIENTE DE MATERIAL REDUCTOR (GE, SB O PB) DE ENERGIA DE ESPACIO DE BANDA Y UN MATERIAL (N, O O F) QUE INCREMENTA LA ENERGIA DE ESPACIO DE BANDA Y CAPAS SEMICONDUCTORAS DE CONDUCTIVIDAD TIPO (N) (20A, 20B, 20C); UN SEGUNDO ELECTRODO FORMADO POR UNA CAPA DE OXIDO TRANSPARENTE (TCO) (22) DE OXIDO DE INDIO, ESTAÑO Y UN ELECTRODO METALICO (24).
ES544481A 1984-06-25 1985-06-24 Un dispositivo fotovoltaico semiconductor amorfo y mejorado Expired ES8609820A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/623,860 US4547621A (en) 1984-06-25 1984-06-25 Stable photovoltaic devices and method of producing same

Publications (2)

Publication Number Publication Date
ES544481A0 ES544481A0 (es) 1986-07-16
ES8609820A1 true ES8609820A1 (es) 1986-07-16

Family

ID=24499680

Family Applications (1)

Application Number Title Priority Date Filing Date
ES544481A Expired ES8609820A1 (es) 1984-06-25 1985-06-24 Un dispositivo fotovoltaico semiconductor amorfo y mejorado

Country Status (9)

Country Link
US (1) US4547621A (es)
EP (1) EP0167323A3 (es)
JP (1) JPH0671090B2 (es)
AU (1) AU4399585A (es)
BR (1) BR8503017A (es)
CA (1) CA1262766A (es)
ES (1) ES8609820A1 (es)
MX (1) MX157839A (es)
ZA (1) ZA854621B (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
US4772933A (en) * 1986-02-03 1988-09-20 General Electric Company Method for compensating operationally-induced defects and semiconductor device made thereby
JPS62234379A (ja) * 1986-04-04 1987-10-14 Kanegafuchi Chem Ind Co Ltd 半導体装置
JP2717583B2 (ja) * 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
AU2003269667A1 (en) * 2002-10-25 2004-05-13 Unaxis Balzers Ltd. Method for producing semi-conducting devices and devices obtained with this method
EP2140482A2 (en) * 2006-06-12 2010-01-06 Matthew R. Robinson Thin-film devices fromed from solid particles
JP5526461B2 (ja) * 2007-03-19 2014-06-18 三洋電機株式会社 光起電力装置
KR101359401B1 (ko) * 2007-06-21 2014-02-10 주성엔지니어링(주) 고효율 박막 태양전지와 그 제조방법 및 제조장치
US8440498B2 (en) 2009-10-28 2013-05-14 Nanosolar, Inc. Thin-film devices formed from solid particles
US9634165B2 (en) * 2009-11-02 2017-04-25 International Business Machines Corporation Regeneration method for restoring photovoltaic cell efficiency
US20110240121A1 (en) * 2010-04-02 2011-10-06 Iowa State University Research Foundation, Inc. Nanocrystalline Superlattice Solar Cell
KR20130042785A (ko) * 2011-10-19 2013-04-29 한국전자통신연구원 태양전지
US9040340B2 (en) * 2011-11-14 2015-05-26 International Business Machines Corporation Temperature grading for band gap engineering of photovoltaic devices
MX356512B (es) * 2012-12-13 2018-05-30 Daniel Scott Marshall Dispositivo fotonico magneticamente polarizado.
US9722120B2 (en) * 2015-09-14 2017-08-01 International Business Machines Corporation Bandgap grading of CZTS solar cell
US10361331B2 (en) 2017-01-18 2019-07-23 International Business Machines Corporation Photovoltaic structures having multiple absorber layers separated by a diffusion barrier

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4206002A (en) * 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
JPS5688377A (en) * 1979-12-19 1981-07-17 Mitsubishi Electric Corp Solar battery and manufacture thereof
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
GB2083701B (en) * 1980-09-09 1985-09-04 Energy Conversion Devices Inc Graded bandgap amorphous semiconductors
JPS5898988A (ja) * 1981-12-08 1983-06-13 Matsushita Electric Ind Co Ltd 太陽光電池
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
JPS58220478A (ja) * 1982-06-17 1983-12-22 Matsushita Electric Ind Co Ltd アモルフアス光電変換素子
JPS5997514A (ja) * 1982-11-22 1984-06-05 Agency Of Ind Science & Technol 太陽電池の製造法
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
JPH0658970B2 (ja) * 1983-08-31 1994-08-03 工業技術院長 半導体装置

Also Published As

Publication number Publication date
JPH0671090B2 (ja) 1994-09-07
US4547621A (en) 1985-10-15
JPS6113673A (ja) 1986-01-21
CA1262766A (en) 1989-11-07
EP0167323A3 (en) 1986-07-16
ES544481A0 (es) 1986-07-16
MX157839A (es) 1988-12-15
ZA854621B (en) 1986-02-26
AU4399585A (en) 1986-01-02
EP0167323A2 (en) 1986-01-08
BR8503017A (pt) 1986-03-11

Similar Documents

Publication Publication Date Title
ES8609820A1 (es) Un dispositivo fotovoltaico semiconductor amorfo y mejorado
AU589568B2 (en) Multijunction semiconductor device
ES478454A1 (es) Un metodo de preparacion de una pelicula semiconductora.
JPS56122123A (en) Semiamorphous semiconductor
KR100296054B1 (es)
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
AU498057B2 (en) High efficiency selenium heterojunction solar cells
JPS6418278A (en) Mis structure photosensor
JPS56138970A (en) Amorphous photoelectric converting element and manufacture thereof
JPS5257792A (en) Photoelectric converting element
JPS56125881A (en) Optical semiconductor element
JPS57187973A (en) Solar cell
JPS5512735A (en) Semiconductor device
JPS5591184A (en) Photodiode
JPS57166397A (en) Converting method of silicon wafer into single crystal
TW227629B (en) Photo receiver with high sensitivity and high current
JPS5437486A (en) Manufacture of gallium phosphate green-color luminous element
JPS6466974A (en) Solar cell
JPS57107080A (en) Amorphous thin film solar cell
SU1215550A1 (ru) Способ изготовления полупроводниковых приборов с пристеночными p-n-переходами
TW237554B (en) Doping method for semiconductor
JPS5297690A (en) Production of solar cells
JPS5626484A (en) Semiconductor light source
JPS53110393A (en) Solar battery
JPS57141975A (en) Photoelectric transducing semiconductor device