ES2728516T3 - Proceso para producir una capa de material orgánico de perovskita con cristalinidad mejorada - Google Patents

Proceso para producir una capa de material orgánico de perovskita con cristalinidad mejorada Download PDF

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ES2728516T3
ES2728516T3 ES15749866T ES15749866T ES2728516T3 ES 2728516 T3 ES2728516 T3 ES 2728516T3 ES 15749866 T ES15749866 T ES 15749866T ES 15749866 T ES15749866 T ES 15749866T ES 2728516 T3 ES2728516 T3 ES 2728516T3
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anion
compound
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Henry James Snaith
Wei Zhang
Michael Saliba
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Oxford University Innovation Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/24—Lead compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311—Purifying organic semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
ES15749866T 2014-08-08 2015-08-07 Proceso para producir una capa de material orgánico de perovskita con cristalinidad mejorada Active ES2728516T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1414110.5A GB201414110D0 (en) 2014-08-08 2014-08-08 Thin film production
PCT/GB2015/052293 WO2016020699A1 (en) 2014-08-08 2015-08-07 Process for producing a layer of organic perovskite material with improved crystallinity

Publications (1)

Publication Number Publication Date
ES2728516T3 true ES2728516T3 (es) 2019-10-25

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ES15749866T Active ES2728516T3 (es) 2014-08-08 2015-08-07 Proceso para producir una capa de material orgánico de perovskita con cristalinidad mejorada

Country Status (10)

Country Link
US (1) US10622162B2 (enExample)
EP (1) EP3178121B1 (enExample)
JP (1) JP6660373B2 (enExample)
KR (1) KR102283498B1 (enExample)
CN (1) CN106796988B (enExample)
ES (1) ES2728516T3 (enExample)
GB (1) GB201414110D0 (enExample)
PL (1) PL3178121T3 (enExample)
TR (1) TR201906638T4 (enExample)
WO (1) WO2016020699A1 (enExample)

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JP6775977B2 (ja) * 2016-03-22 2020-10-28 キヤノン株式会社 光電変換装置、及び撮像システム
JP6473774B2 (ja) * 2016-06-20 2019-02-20 旭化成株式会社 組成物
EP3272757A1 (en) * 2016-07-21 2018-01-24 Ecole Polytechnique Fédérale de Lausanne (EPFL) Mixed cation perovskite solid state solar cell and fabrication thereof
CN106206956B (zh) * 2016-09-07 2018-12-04 中国工程物理研究院材料研究所 一种含铜离子钙钛矿薄膜的制备方法
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JP7094668B2 (ja) * 2016-09-21 2022-07-04 株式会社東芝 太陽電池モジュール及び太陽光発電システム
CN106590629B (zh) * 2016-11-23 2018-11-13 厦门华厦学院 一种提高MAPbBr3钙钛矿量子点稳定性的方法
CN106816532B (zh) * 2017-01-13 2019-08-27 浙江大学 基于有机-无机杂化钙钛矿取向结晶薄膜的太阳电池
CN106803538B (zh) * 2017-01-13 2019-08-23 浙江大学 垂直取向结构的二维有机-无机杂化钙钛矿薄膜材料
JP6378383B1 (ja) * 2017-03-07 2018-08-22 株式会社東芝 半導体素子およびその製造方法
CN106684247A (zh) * 2017-03-15 2017-05-17 中南大学 一种钙钛矿太阳能电池及其制备方法
CN107275492B (zh) * 2017-05-19 2020-07-03 北京科技大学 引入非溶质基溴化物添加剂制备混合卤素钙钛矿的方法
CN109244250B (zh) * 2017-07-11 2023-09-22 松下控股株式会社 太阳能电池模块
CN107369768B (zh) * 2017-08-07 2019-09-27 电子科技大学 一种基于新有机铅源的钙钛矿太阳能电池的制备方法
US11174276B2 (en) 2017-09-06 2021-11-16 Alliance For Sustainable Energy, Llc Organic-inorganic perovskite materials and methods of making the same
CN108365102B (zh) * 2018-02-22 2020-03-27 南京工业大学 一种稳定高效二维层状钙钛矿太阳能电池及其制备方法
CN112166160B (zh) * 2018-04-02 2024-11-12 北卡罗来纳大学教堂山分校 包括混合溶剂体系的钙钛矿组合物
EP3785020A4 (en) * 2018-04-27 2022-01-19 University of Washington METAL HALIDE SEMICONDUCTOR OPTICAL AND ELECTRONIC DEVICES AND PROCESSES FOR THEIR MANUFACTURE
CN109065727A (zh) * 2018-07-24 2018-12-21 北京科技大学 一种钙钛矿太阳能电池的制备方法
CN109052455B (zh) * 2018-10-11 2020-12-15 南京邮电大学 一种无毒稳定钙钛矿的制备方法
GB201817167D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Process for producing a layer with mixed solvent system
GB201820427D0 (en) * 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
US12152935B2 (en) * 2019-02-11 2024-11-26 Rensselaer Polytechnic Institute Hybrid fiber for detection of UV light
CN110085744B (zh) * 2019-04-10 2021-01-26 北京大学 有效固定有机阳离子的钙钛矿薄膜及太阳能电池的制备
CN112151677A (zh) * 2019-06-29 2020-12-29 杭州纤纳光电科技有限公司 一种钙钛矿薄膜的制备方法及其钙钛矿太阳能电池
CN110330435B (zh) * 2019-07-12 2020-08-07 中国科学院高能物理研究所 半导体材料、包含它的光电转换器件及制备方法
JP7401070B2 (ja) * 2019-08-09 2023-12-19 三菱ケミカル株式会社 ペロブスカイト膜の製造方法、及び光電変換素子の製造方法
CN110592668A (zh) * 2019-10-12 2019-12-20 浙江工业大学 一种六角形碘化铅微纳单晶板的液相合成方法
MY210431A (en) 2020-02-19 2025-09-23 First Solar Inc Methods for perovskite device processing by vapor transport deposition
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JP6660373B2 (ja) 2020-03-11
CN106796988A (zh) 2017-05-31
WO2016020699A1 (en) 2016-02-11
PL3178121T3 (pl) 2019-08-30
GB201414110D0 (en) 2014-09-24
KR20170041832A (ko) 2017-04-17
KR102283498B1 (ko) 2021-07-29
TR201906638T4 (tr) 2019-05-21
US10622162B2 (en) 2020-04-14
US20170229249A1 (en) 2017-08-10
CN106796988B (zh) 2019-04-23
EP3178121B1 (en) 2019-03-13
JP2017530546A (ja) 2017-10-12
EP3178121A1 (en) 2017-06-14

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