JP6660373B2 - 結晶化度を向上させた有機ペロブスカイト材料の層を製造する方法 - Google Patents

結晶化度を向上させた有機ペロブスカイト材料の層を製造する方法 Download PDF

Info

Publication number
JP6660373B2
JP6660373B2 JP2017506736A JP2017506736A JP6660373B2 JP 6660373 B2 JP6660373 B2 JP 6660373B2 JP 2017506736 A JP2017506736 A JP 2017506736A JP 2017506736 A JP2017506736 A JP 2017506736A JP 6660373 B2 JP6660373 B2 JP 6660373B2
Authority
JP
Japan
Prior art keywords
cation
anion
unsubstituted
compound
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017506736A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017530546A5 (enExample
JP2017530546A (ja
Inventor
ジェームズ スナイス，ヘンリー
ジェームズ スナイス，ヘンリー
チャン，ウェイ
サリバ，マイケル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Publication of JP2017530546A publication Critical patent/JP2017530546A/ja
Publication of JP2017530546A5 publication Critical patent/JP2017530546A5/ja
Application granted granted Critical
Publication of JP6660373B2 publication Critical patent/JP6660373B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/24—Lead compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311—Purifying organic semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
JP2017506736A 2014-08-08 2015-08-07 結晶化度を向上させた有機ペロブスカイト材料の層を製造する方法 Active JP6660373B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1414110.5A GB201414110D0 (en) 2014-08-08 2014-08-08 Thin film production
GB1414110.5 2014-08-08
PCT/GB2015/052293 WO2016020699A1 (en) 2014-08-08 2015-08-07 Process for producing a layer of organic perovskite material with improved crystallinity

Publications (3)

Publication Number Publication Date
JP2017530546A JP2017530546A (ja) 2017-10-12
JP2017530546A5 JP2017530546A5 (enExample) 2018-09-13
JP6660373B2 true JP6660373B2 (ja) 2020-03-11

Family

ID=51629534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017506736A Active JP6660373B2 (ja) 2014-08-08 2015-08-07 結晶化度を向上させた有機ペロブスカイト材料の層を製造する方法

Country Status (10)

Country Link
US (1) US10622162B2 (enExample)
EP (1) EP3178121B1 (enExample)
JP (1) JP6660373B2 (enExample)
KR (1) KR102283498B1 (enExample)
CN (1) CN106796988B (enExample)
ES (1) ES2728516T3 (enExample)
GB (1) GB201414110D0 (enExample)
PL (1) PL3178121T3 (enExample)
TR (1) TR201906638T4 (enExample)
WO (1) WO2016020699A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6419332B2 (ja) * 2015-06-26 2018-11-14 富士フイルム株式会社 光電変換素子、太陽電池、金属塩組成物および光電変換素子の製造方法
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
GB201604050D0 (en) 2016-03-09 2016-04-20 Isis Innovation A/M/X material production process with alkylamine
EP3430655A2 (en) * 2016-03-18 2019-01-23 Ecole Polytechnique Federale de Lausanne (EPFL) High efficiency large area perovskite solar cells and process for producing the same
JP6775977B2 (ja) * 2016-03-22 2020-10-28 キヤノン株式会社 光電変換装置、及び撮像システム
JP6473774B2 (ja) * 2016-06-20 2019-02-20 旭化成株式会社 組成物
EP3272757A1 (en) * 2016-07-21 2018-01-24 Ecole Polytechnique Fédérale de Lausanne (EPFL) Mixed cation perovskite solid state solar cell and fabrication thereof
CN106206956B (zh) * 2016-09-07 2018-12-04 中国工程物理研究院材料研究所 一种含铜离子钙钛矿薄膜的制备方法
WO2018047066A1 (en) * 2016-09-08 2018-03-15 King Abdullah University Of Science And Technology Organo-lead halide perovskites thin single crystals
JP7094668B2 (ja) * 2016-09-21 2022-07-04 株式会社東芝 太陽電池モジュール及び太陽光発電システム
CN106590629B (zh) * 2016-11-23 2018-11-13 厦门华厦学院 一种提高MAPbBr3钙钛矿量子点稳定性的方法
CN106816532B (zh) * 2017-01-13 2019-08-27 浙江大学 基于有机-无机杂化钙钛矿取向结晶薄膜的太阳电池
CN106803538B (zh) * 2017-01-13 2019-08-23 浙江大学 垂直取向结构的二维有机-无机杂化钙钛矿薄膜材料
JP6378383B1 (ja) * 2017-03-07 2018-08-22 株式会社東芝 半導体素子およびその製造方法
CN106684247A (zh) * 2017-03-15 2017-05-17 中南大学 一种钙钛矿太阳能电池及其制备方法
CN107275492B (zh) * 2017-05-19 2020-07-03 北京科技大学 引入非溶质基溴化物添加剂制备混合卤素钙钛矿的方法
CN109244250B (zh) * 2017-07-11 2023-09-22 松下控股株式会社 太阳能电池模块
CN107369768B (zh) * 2017-08-07 2019-09-27 电子科技大学 一种基于新有机铅源的钙钛矿太阳能电池的制备方法
US11174276B2 (en) 2017-09-06 2021-11-16 Alliance For Sustainable Energy, Llc Organic-inorganic perovskite materials and methods of making the same
CN108365102B (zh) * 2018-02-22 2020-03-27 南京工业大学 一种稳定高效二维层状钙钛矿太阳能电池及其制备方法
CN112166160B (zh) * 2018-04-02 2024-11-12 北卡罗来纳大学教堂山分校 包括混合溶剂体系的钙钛矿组合物
EP3785020A4 (en) * 2018-04-27 2022-01-19 University of Washington METAL HALIDE SEMICONDUCTOR OPTICAL AND ELECTRONIC DEVICES AND PROCESSES FOR THEIR MANUFACTURE
CN109065727A (zh) * 2018-07-24 2018-12-21 北京科技大学 一种钙钛矿太阳能电池的制备方法
CN109052455B (zh) * 2018-10-11 2020-12-15 南京邮电大学 一种无毒稳定钙钛矿的制备方法
GB201817167D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Process for producing a layer with mixed solvent system
GB201820427D0 (en) * 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
US12152935B2 (en) * 2019-02-11 2024-11-26 Rensselaer Polytechnic Institute Hybrid fiber for detection of UV light
CN110085744B (zh) * 2019-04-10 2021-01-26 北京大学 有效固定有机阳离子的钙钛矿薄膜及太阳能电池的制备
CN112151677A (zh) * 2019-06-29 2020-12-29 杭州纤纳光电科技有限公司 一种钙钛矿薄膜的制备方法及其钙钛矿太阳能电池
CN110330435B (zh) * 2019-07-12 2020-08-07 中国科学院高能物理研究所 半导体材料、包含它的光电转换器件及制备方法
JP7401070B2 (ja) * 2019-08-09 2023-12-19 三菱ケミカル株式会社 ペロブスカイト膜の製造方法、及び光電変換素子の製造方法
CN110592668A (zh) * 2019-10-12 2019-12-20 浙江工业大学 一种六角形碘化铅微纳单晶板的液相合成方法
MY210431A (en) 2020-02-19 2025-09-23 First Solar Inc Methods for perovskite device processing by vapor transport deposition
CN112086535B (zh) * 2020-08-20 2022-08-09 隆基绿能科技股份有限公司 一种叠层电池
AU2021347825B2 (en) 2020-09-22 2024-11-07 Caelux Corporation Methods and devices for integrated tandem solar module fabrication
KR20230080896A (ko) 2021-11-30 2023-06-07 경희대학교 산학협력단 결함을 이용한 페로브스카이트 구조 산화물의 결정화 방법
CN114530560B (zh) * 2022-01-25 2025-06-10 哈尔滨师范大学 一种钙钛矿单晶光电探测器及其制备方法
CN114695667B (zh) * 2022-03-22 2023-04-07 电子科技大学 一种埋底界面处理制备高效柔性钙钛矿太阳电池的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656329A (en) 1995-03-13 1997-08-12 Texas Instruments Incorporated Chemical vapor deposition of metal oxide films through ester elimination reactions
US5894064A (en) 1995-03-13 1999-04-13 Hampden-Smith; Mark Solution routes to metal oxide films through ester elimination reactions
US6429318B1 (en) * 2000-02-07 2002-08-06 International Business Machines Corporaiton Layered organic-inorganic perovskites having metal-deficient inorganic frameworks
KR100657891B1 (ko) 2003-07-19 2006-12-14 삼성전자주식회사 반도체 나노결정 및 그 제조방법
GB201208793D0 (en) * 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
US10069025B2 (en) * 2012-09-18 2018-09-04 Oxford University Innovation Limited Optoelectronic device
AU2013365633B2 (en) * 2012-12-20 2017-07-27 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Perovskite schottky type solar cell
JP2014154498A (ja) * 2013-02-13 2014-08-25 Nsk Ltd 光電変換素子
GB201310854D0 (en) 2013-06-18 2013-07-31 Isis Innovation Photoactive layer production process
JP6106131B2 (ja) * 2013-07-31 2017-03-29 富士フイルム株式会社 光電変換素子および太陽電池
WO2015099412A1 (ko) * 2013-12-23 2015-07-02 한국화학연구원 무/유기 하이브리드 페로브스카이트 화합물 전구물질

Also Published As

Publication number Publication date
CN106796988A (zh) 2017-05-31
WO2016020699A1 (en) 2016-02-11
PL3178121T3 (pl) 2019-08-30
GB201414110D0 (en) 2014-09-24
KR20170041832A (ko) 2017-04-17
KR102283498B1 (ko) 2021-07-29
ES2728516T3 (es) 2019-10-25
TR201906638T4 (tr) 2019-05-21
US10622162B2 (en) 2020-04-14
US20170229249A1 (en) 2017-08-10
CN106796988B (zh) 2019-04-23
EP3178121B1 (en) 2019-03-13
JP2017530546A (ja) 2017-10-12
EP3178121A1 (en) 2017-06-14

Similar Documents

Publication Publication Date Title
EP3178121B1 (en) Process for producing a layer of organic perovskite material with improved crystallinity
Prochowicz et al. Engineering of perovskite materials based on formamidinium and cesium hybridization for high-efficiency solar cells
AU2016204753B2 (en) Optoelectronic device
US10797255B2 (en) Material production process with alkylamine
Dubey et al. A strategic review on processing routes towards highly efficient perovskite solar cells
Chen et al. Origin of J–V hysteresis in perovskite solar cells
JP7166613B2 (ja) 高効率大面積ペロブスカイト太陽電池及びその製造方法
US10593487B2 (en) Mixed organic-inorganic perovskite formulations
JP2018517303A (ja) 光起電力デバイス
Li et al. Luminescent intermediates and humidity-dependent room-temperature conversion of the MAPbI3 perovskite precursor
EP3613089B1 (en) Semiconductor device comprising halopalladate
Abid et al. Phenothiazine-based self-assembled monolayers for efficient tin perovskite solar cells with Co-cations
Zheng Composition Engineering and Interface Optimization of Tin-based Perovskite Solar cells
WO2023047116A1 (en) Perovskite production process

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7426

Effective date: 20171026

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20171026

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180802

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180802

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200122

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200204

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200207

R150 Certificate of patent or registration of utility model

Ref document number: 6660373

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531