ES2079616T3 - Procedimiento de cristalizacion en presencia de un campo magnetico. - Google Patents
Procedimiento de cristalizacion en presencia de un campo magnetico.Info
- Publication number
- ES2079616T3 ES2079616T3 ES91420288T ES91420288T ES2079616T3 ES 2079616 T3 ES2079616 T3 ES 2079616T3 ES 91420288 T ES91420288 T ES 91420288T ES 91420288 T ES91420288 T ES 91420288T ES 2079616 T3 ES2079616 T3 ES 2079616T3
- Authority
- ES
- Spain
- Prior art keywords
- melting
- substance
- temperature
- magnetic field
- crystallites
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
- C04B35/4508—Type 1-2-3
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/653—Processes involving a melting step
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Hard Magnetic Materials (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
LA PRESENTE INVENCION SE REFIERE A UN PROCESO DE PREPARACION DE UN CUERPO MAGNETICO ORIENTADO Y ESTRUCTURADO, QUE COMPRENDE LAS ETAPAS CONSISTENTES EN: PREPARAR UNA COMPOSICION TAL QUE DESPUES DEL PASO A ESTADO FUNDIDO Y SOLIDIFICACION, PROPORCIONA SENSIBLEMENTE UNICAMENTE DICHA SUSTANCIA Y QUE, A LA TEMPERATURA DE FUSION DE ESTA COMPOSICION, EXISTEN CRISTALITOS DE DICHA SUSTANCIA; CALENTAR LENTAMENTE CERCA DE LA TEMPERATURA DE FUSION HASTA ALGUNOS GRADOS POR ENCIMA DE ESTA TEMPERATURA, DE MANERA QUE PERMANECEN CRISTALITOS DE DICHA SUSTANCIA EN UNA FASE LIQUIDA; ENFRIAR LENTAMENTE CERCA DE LA TEMPERATURA DE FUSION, HASTA LA SOLIDIFICACION; Y APLICAR, AL MENOS A PARTIR DEL MOMENTO EN QUE LA SUSTANCIA EMPIEZA A ENTRAR EN ESTADO LIQUIDO HASTA EL MOMENTO EN QUE SE SOLIDIFICA COMPLETAMENTE, UN CAMPO MAGNETICO DE INTENSIDAD SUFICIENTE PARA CONFERIR, NO OBSTANTE LA ENERGIA DE AGITACION TERMICA, UNA ORIENTACION PRIVILEGIADA DE LOS CRISTALITOS DE DIMENSIONES SUFICIENTES PARA CONSTITUIR GERMENES DE CRISTALIZACION.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9010090A FR2665462B1 (fr) | 1990-08-02 | 1990-08-02 | Procede de cristallisation en presence de champ magnetique. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2079616T3 true ES2079616T3 (es) | 1996-01-16 |
Family
ID=9399501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES91420288T Expired - Lifetime ES2079616T3 (es) | 1990-08-02 | 1991-08-01 | Procedimiento de cristalizacion en presencia de un campo magnetico. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5217944A (es) |
EP (1) | EP0474566B1 (es) |
JP (1) | JP3290191B2 (es) |
DE (1) | DE69114092T2 (es) |
ES (1) | ES2079616T3 (es) |
FR (1) | FR2665462B1 (es) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2689524B1 (fr) * | 1992-04-06 | 1994-05-13 | Alcatel Alsthom Cie Gle Electric | Procede de fabrication d'un lingot en oxyde supraconducteur a haute temperature critique. |
EP0624664B1 (en) * | 1993-05-10 | 1999-01-07 | International Superconductivity Technology Center | Method of preparing metal oxide crystal |
US5591698A (en) * | 1994-12-29 | 1997-01-07 | University Of Hawaii | Low temperature (T lower than 950° C.) preparation of melt texture YBCO superconductors |
US5611854A (en) * | 1995-09-21 | 1997-03-18 | The University Of Chicago | Seed crystals with improved properties for melt processing superconductors for practical applications |
JP3144675B2 (ja) * | 1998-12-18 | 2001-03-12 | 財団法人国際超電導産業技術研究センター | 酸化物超電導体及びその製造方法 |
CN113355734A (zh) * | 2021-06-07 | 2021-09-07 | 上海工程技术大学 | 磁场诱导等温凝固过程中易轴织构的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2611411B1 (fr) * | 1987-02-27 | 1989-04-21 | Francois Joel | Systeme de commutation de multiplex temporels hybrides |
JP2651481B2 (ja) * | 1987-09-21 | 1997-09-10 | 株式会社 半導体エネルギー研究所 | 超伝導材料の作製方法 |
JPH0797454B2 (ja) * | 1987-09-21 | 1995-10-18 | 株式会社半導体エネルギー研究所 | 超伝導材料の作製方法 |
JPH01108156A (ja) * | 1987-10-20 | 1989-04-25 | Sumitomo Heavy Ind Ltd | 酸化物系超電導材の製造方法 |
ATE80600T1 (de) * | 1988-03-21 | 1992-10-15 | American Telephone & Telegraph | Wachstum von supraleitermaterial aus einer flussmittel-schmelze, sowie fertigungsartikel. |
JPH027309A (ja) * | 1988-06-24 | 1990-01-11 | Furukawa Electric Co Ltd:The | 酸化物系超電導線条体の製造方法 |
US4990493A (en) * | 1988-09-06 | 1991-02-05 | General Electric Company | Process of making an oriented polycrystal superconductor |
US4939121A (en) * | 1988-10-20 | 1990-07-03 | General Dynamics Corporation, Electronics Division | Method and apparatus for inducing grain orientation by magnetic and electric field ordering during bulk superconductor synthesis |
-
1990
- 1990-08-02 FR FR9010090A patent/FR2665462B1/fr not_active Expired - Lifetime
-
1991
- 1991-08-01 US US07/738,510 patent/US5217944A/en not_active Expired - Lifetime
- 1991-08-01 DE DE69114092T patent/DE69114092T2/de not_active Expired - Lifetime
- 1991-08-01 ES ES91420288T patent/ES2079616T3/es not_active Expired - Lifetime
- 1991-08-01 EP EP91420288A patent/EP0474566B1/fr not_active Expired - Lifetime
- 1991-08-01 JP JP19323491A patent/JP3290191B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2665462A1 (fr) | 1992-02-07 |
EP0474566A3 (fr) | 1992-03-18 |
US5217944A (en) | 1993-06-08 |
DE69114092D1 (de) | 1995-11-30 |
FR2665462B1 (fr) | 1997-08-29 |
DE69114092T2 (de) | 1996-06-05 |
JP3290191B2 (ja) | 2002-06-10 |
EP0474566A2 (fr) | 1992-03-11 |
EP0474566B1 (fr) | 1995-10-25 |
JPH05132318A (ja) | 1993-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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