ATE80600T1 - Wachstum von supraleitermaterial aus einer flussmittel-schmelze, sowie fertigungsartikel. - Google Patents
Wachstum von supraleitermaterial aus einer flussmittel-schmelze, sowie fertigungsartikel.Info
- Publication number
- ATE80600T1 ATE80600T1 AT89302394T AT89302394T ATE80600T1 AT E80600 T1 ATE80600 T1 AT E80600T1 AT 89302394 T AT89302394 T AT 89302394T AT 89302394 T AT89302394 T AT 89302394T AT E80600 T1 ATE80600 T1 AT E80600T1
- Authority
- AT
- Austria
- Prior art keywords
- superconductor material
- growth
- articles
- manufacture
- flux melt
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 4
- 239000002887 superconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 abstract 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 4
- 239000001103 potassium chloride Substances 0.000 abstract 2
- 235000011164 potassium chloride Nutrition 0.000 abstract 2
- 239000011780 sodium chloride Substances 0.000 abstract 2
- JUTBAAKKCNZFKO-UHFFFAOYSA-N [Ca].[Sr].[Bi] Chemical compound [Ca].[Sr].[Bi] JUTBAAKKCNZFKO-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4521—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing bismuth oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/653—Processes involving a melting step
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Ladders (AREA)
- Conductive Materials (AREA)
- Glass Compositions (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17053088A | 1988-03-21 | 1988-03-21 | |
EP89302394A EP0334517B1 (de) | 1988-03-21 | 1989-03-10 | Wachstum von Supraleitermaterial aus einer Flussmittel-Schmelze, sowie Fertigungsartikel |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE80600T1 true ATE80600T1 (de) | 1992-10-15 |
Family
ID=22620225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT89302394T ATE80600T1 (de) | 1988-03-21 | 1989-03-10 | Wachstum von supraleitermaterial aus einer flussmittel-schmelze, sowie fertigungsartikel. |
Country Status (11)
Country | Link |
---|---|
US (1) | US5039653A (de) |
EP (1) | EP0334517B1 (de) |
JP (1) | JPH01275435A (de) |
KR (1) | KR920005517B1 (de) |
AT (1) | ATE80600T1 (de) |
AU (1) | AU607596B2 (de) |
CA (1) | CA1334275C (de) |
DE (1) | DE68902853T2 (de) |
DK (1) | DK134989A (de) |
HK (1) | HK108493A (de) |
SG (1) | SG60793G (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4880771A (en) * | 1988-02-12 | 1989-11-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Bismuth-lead-strontium-calcium-cuprate superconductors |
DE68912792T2 (de) * | 1988-02-26 | 1994-05-19 | Hitachi Ltd | Verfahren zur Herstellung eines hochtemperaturoxid supraleitenden Werkstoffs. |
JPH01275492A (ja) * | 1988-04-25 | 1989-11-06 | Nippon Telegr & Teleph Corp <Ntt> | 酸化物単結晶の成長方法 |
IL90809A0 (en) * | 1988-08-03 | 1990-01-18 | Gen Electric | Synthesis of lanthanum-alkaline earth-copper-oxygen super-conductive material |
DE3921127A1 (de) * | 1989-06-28 | 1991-01-03 | Leybold Ag | Verfahren fuer die herstellung supraleitender keramiken |
US5096879A (en) * | 1989-08-28 | 1992-03-17 | General Electric Company | Synthesis of bi-ca-sr-cu-o superconductive material |
GB9008753D0 (en) * | 1990-04-19 | 1990-06-13 | Lynxvale Ltd | Superconductors |
US5087606A (en) * | 1990-05-29 | 1992-02-11 | General Electric Company | Bismuth-containing superconductors containing radioactive dopants |
FR2665462B1 (fr) * | 1990-08-02 | 1997-08-29 | Centre Nat Rech Scient | Procede de cristallisation en presence de champ magnetique. |
JPH04130092A (ja) * | 1990-09-21 | 1992-05-01 | Nec Corp | 酸化物超伝導体単結晶の製造方法およびその超伝導転移温度の制御方法 |
JPH04130093A (ja) * | 1990-09-21 | 1992-05-01 | Nec Corp | 酸化物超伝導体単結晶の製造方法およびその超伝導転移温度の制御方法 |
JPH04202093A (ja) * | 1990-11-30 | 1992-07-22 | Nec Corp | 酸化物超伝導体単結晶の製造方法およびその超伝導転移温度の制御方法 |
US5385882A (en) * | 1991-04-12 | 1995-01-31 | Alfred Univeristy | Process for preparing a thallium-containing superconductor |
US5270293A (en) * | 1991-04-12 | 1993-12-14 | Alfred University | Molten salt synthesis of anisotropic powders |
DE4124823A1 (de) * | 1991-07-26 | 1993-01-28 | Hoechst Ag | Hochtemperatur-supraleiter und verfahren zu seiner herstellung |
DE4322533A1 (de) * | 1993-07-07 | 1995-01-12 | Leybold Durferrit Gmbh | Verfahren zur Herstellung supraleitender Keramiken und die Kermiken selbst |
JP2002037626A (ja) * | 2000-07-27 | 2002-02-06 | Internatl Superconductivity Technology Center | ビスマス系高温超電導体の製造方法。 |
CN101037582A (zh) * | 2007-01-23 | 2007-09-19 | 郑达 | 焰色反应材料及其火焰反应部件 |
US7985394B2 (en) * | 2007-09-19 | 2011-07-26 | Gideon Duvall | System and method for manufacturing carbon nanotubes |
US20100212727A1 (en) * | 2009-02-26 | 2010-08-26 | Ji Ung Lee | Apparatus and methods for continuously growing carbon nanotubes and graphene sheets |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61215296A (ja) * | 1985-03-18 | 1986-09-25 | Shinichi Hirano | BaPb↓1−xBixO↓3単結晶の製造方法 |
JPS61215295A (ja) * | 1985-03-18 | 1986-09-25 | Shinichi Hirano | 炭酸カルシユウム単結晶の製造方法 |
FR2585345B1 (fr) * | 1985-07-26 | 1989-08-18 | Centre Nat Rech Scient | Procede de synthese en flux de cristaux du type du ktiopo4 ou monophosphate de potassium et de titanyle |
-
1989
- 1989-03-10 AT AT89302394T patent/ATE80600T1/de not_active IP Right Cessation
- 1989-03-10 EP EP89302394A patent/EP0334517B1/de not_active Expired - Lifetime
- 1989-03-10 DE DE8989302394T patent/DE68902853T2/de not_active Expired - Fee Related
- 1989-03-16 JP JP1062369A patent/JPH01275435A/ja active Granted
- 1989-03-17 AU AU31472/89A patent/AU607596B2/en not_active Ceased
- 1989-03-20 DK DK134989A patent/DK134989A/da unknown
- 1989-03-20 KR KR1019890003465A patent/KR920005517B1/ko not_active IP Right Cessation
- 1989-03-20 CA CA000594202A patent/CA1334275C/en not_active Expired - Fee Related
-
1990
- 1990-03-29 US US07/503,062 patent/US5039653A/en not_active Expired - Lifetime
-
1993
- 1993-05-07 SG SG607/93A patent/SG60793G/en unknown
- 1993-10-14 HK HK1084/93A patent/HK108493A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE68902853D1 (de) | 1992-10-22 |
AU3147289A (en) | 1989-09-21 |
SG60793G (en) | 1993-07-09 |
CA1334275C (en) | 1995-02-07 |
HK108493A (en) | 1993-10-22 |
KR920005517B1 (ko) | 1992-07-06 |
DE68902853T2 (de) | 1993-02-04 |
EP0334517B1 (de) | 1992-09-16 |
US5039653A (en) | 1991-08-13 |
AU607596B2 (en) | 1991-03-07 |
EP0334517A1 (de) | 1989-09-27 |
DK134989D0 (da) | 1989-03-20 |
JPH0567571B2 (de) | 1993-09-27 |
JPH01275435A (ja) | 1989-11-06 |
DK134989A (da) | 1989-09-22 |
KR890015437A (ko) | 1989-10-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |