ATE80600T1 - Wachstum von supraleitermaterial aus einer flussmittel-schmelze, sowie fertigungsartikel. - Google Patents

Wachstum von supraleitermaterial aus einer flussmittel-schmelze, sowie fertigungsartikel.

Info

Publication number
ATE80600T1
ATE80600T1 AT89302394T AT89302394T ATE80600T1 AT E80600 T1 ATE80600 T1 AT E80600T1 AT 89302394 T AT89302394 T AT 89302394T AT 89302394 T AT89302394 T AT 89302394T AT E80600 T1 ATE80600 T1 AT E80600T1
Authority
AT
Austria
Prior art keywords
superconductor material
growth
articles
manufacture
flux melt
Prior art date
Application number
AT89302394T
Other languages
English (en)
Inventor
Kenneth Arthur Jackson
Lynn Frances Schneemeyer
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Application granted granted Critical
Publication of ATE80600T1 publication Critical patent/ATE80600T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4521—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing bismuth oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/653—Processes involving a melting step
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Ladders (AREA)
  • Ceramic Capacitors (AREA)
  • Glass Compositions (AREA)
  • Conductive Materials (AREA)
AT89302394T 1988-03-21 1989-03-10 Wachstum von supraleitermaterial aus einer flussmittel-schmelze, sowie fertigungsartikel. ATE80600T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17053088A 1988-03-21 1988-03-21
EP89302394A EP0334517B1 (de) 1988-03-21 1989-03-10 Wachstum von Supraleitermaterial aus einer Flussmittel-Schmelze, sowie Fertigungsartikel

Publications (1)

Publication Number Publication Date
ATE80600T1 true ATE80600T1 (de) 1992-10-15

Family

ID=22620225

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89302394T ATE80600T1 (de) 1988-03-21 1989-03-10 Wachstum von supraleitermaterial aus einer flussmittel-schmelze, sowie fertigungsartikel.

Country Status (11)

Country Link
US (1) US5039653A (de)
EP (1) EP0334517B1 (de)
JP (1) JPH01275435A (de)
KR (1) KR920005517B1 (de)
AT (1) ATE80600T1 (de)
AU (1) AU607596B2 (de)
CA (1) CA1334275C (de)
DE (1) DE68902853T2 (de)
DK (1) DK134989A (de)
HK (1) HK108493A (de)
SG (1) SG60793G (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4880771A (en) * 1988-02-12 1989-11-14 American Telephone And Telegraph Company, At&T Bell Laboratories Bismuth-lead-strontium-calcium-cuprate superconductors
EP0331360B1 (de) * 1988-02-26 1994-02-02 Hitachi, Ltd. Verfahren zur Herstellung eines hochtemperaturoxid supraleitenden Werkstoffs
JPH01275492A (ja) * 1988-04-25 1989-11-06 Nippon Telegr & Teleph Corp <Ntt> 酸化物単結晶の成長方法
IL90809A0 (en) * 1988-08-03 1990-01-18 Gen Electric Synthesis of lanthanum-alkaline earth-copper-oxygen super-conductive material
DE3921127A1 (de) * 1989-06-28 1991-01-03 Leybold Ag Verfahren fuer die herstellung supraleitender keramiken
US5096879A (en) * 1989-08-28 1992-03-17 General Electric Company Synthesis of bi-ca-sr-cu-o superconductive material
GB9008753D0 (en) * 1990-04-19 1990-06-13 Lynxvale Ltd Superconductors
US5087606A (en) * 1990-05-29 1992-02-11 General Electric Company Bismuth-containing superconductors containing radioactive dopants
FR2665462B1 (fr) * 1990-08-02 1997-08-29 Centre Nat Rech Scient Procede de cristallisation en presence de champ magnetique.
JPH04130092A (ja) * 1990-09-21 1992-05-01 Nec Corp 酸化物超伝導体単結晶の製造方法およびその超伝導転移温度の制御方法
JPH04130093A (ja) * 1990-09-21 1992-05-01 Nec Corp 酸化物超伝導体単結晶の製造方法およびその超伝導転移温度の制御方法
JPH04202093A (ja) * 1990-11-30 1992-07-22 Nec Corp 酸化物超伝導体単結晶の製造方法およびその超伝導転移温度の制御方法
US5385882A (en) * 1991-04-12 1995-01-31 Alfred Univeristy Process for preparing a thallium-containing superconductor
US5270293A (en) * 1991-04-12 1993-12-14 Alfred University Molten salt synthesis of anisotropic powders
DE4124823A1 (de) * 1991-07-26 1993-01-28 Hoechst Ag Hochtemperatur-supraleiter und verfahren zu seiner herstellung
DE4322533A1 (de) * 1993-07-07 1995-01-12 Leybold Durferrit Gmbh Verfahren zur Herstellung supraleitender Keramiken und die Kermiken selbst
JP2002037626A (ja) * 2000-07-27 2002-02-06 Internatl Superconductivity Technology Center ビスマス系高温超電導体の製造方法。
CN101037582A (zh) * 2007-01-23 2007-09-19 郑达 焰色反应材料及其火焰反应部件
US7985394B2 (en) * 2007-09-19 2011-07-26 Gideon Duvall System and method for manufacturing carbon nanotubes
US20100212727A1 (en) * 2009-02-26 2010-08-26 Ji Ung Lee Apparatus and methods for continuously growing carbon nanotubes and graphene sheets

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61215296A (ja) * 1985-03-18 1986-09-25 Shinichi Hirano ＢａＰｂ↓１−ｘＢｉｘＯ↓３単結晶の製造方法
JPS61215295A (ja) * 1985-03-18 1986-09-25 Shinichi Hirano 炭酸カルシユウム単結晶の製造方法
FR2585345B1 (fr) * 1985-07-26 1989-08-18 Centre Nat Rech Scient Procede de synthese en flux de cristaux du type du ktiopo4 ou monophosphate de potassium et de titanyle

Also Published As

Publication number Publication date
JPH01275435A (ja) 1989-11-06
AU607596B2 (en) 1991-03-07
CA1334275C (en) 1995-02-07
EP0334517A1 (de) 1989-09-27
JPH0567571B2 (de) 1993-09-27
DK134989D0 (da) 1989-03-20
DK134989A (da) 1989-09-22
KR890015437A (ko) 1989-10-30
AU3147289A (en) 1989-09-21
EP0334517B1 (de) 1992-09-16
SG60793G (en) 1993-07-09
DE68902853T2 (de) 1993-02-04
DE68902853D1 (de) 1992-10-22
US5039653A (en) 1991-08-13
KR920005517B1 (ko) 1992-07-06
HK108493A (en) 1993-10-22

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