DE69114092T2 - Verfahren zur Kristallisierung in Gegenwart eines magnetischen Feldes. - Google Patents

Verfahren zur Kristallisierung in Gegenwart eines magnetischen Feldes.

Info

Publication number
DE69114092T2
DE69114092T2 DE69114092T DE69114092T DE69114092T2 DE 69114092 T2 DE69114092 T2 DE 69114092T2 DE 69114092 T DE69114092 T DE 69114092T DE 69114092 T DE69114092 T DE 69114092T DE 69114092 T2 DE69114092 T2 DE 69114092T2
Authority
DE
Germany
Prior art keywords
crystallization
magnetic field
magnetic
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69114092T
Other languages
English (en)
Other versions
DE69114092D1 (de
Inventor
Robert Tournier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of DE69114092D1 publication Critical patent/DE69114092D1/de
Application granted granted Critical
Publication of DE69114092T2 publication Critical patent/DE69114092T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
    • C04B35/4508—Type 1-2-3
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/653—Processes involving a melting step
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Hard Magnetic Materials (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
DE69114092T 1990-08-02 1991-08-01 Verfahren zur Kristallisierung in Gegenwart eines magnetischen Feldes. Expired - Lifetime DE69114092T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9010090A FR2665462B1 (fr) 1990-08-02 1990-08-02 Procede de cristallisation en presence de champ magnetique.

Publications (2)

Publication Number Publication Date
DE69114092D1 DE69114092D1 (de) 1995-11-30
DE69114092T2 true DE69114092T2 (de) 1996-06-05

Family

ID=9399501

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69114092T Expired - Lifetime DE69114092T2 (de) 1990-08-02 1991-08-01 Verfahren zur Kristallisierung in Gegenwart eines magnetischen Feldes.

Country Status (6)

Country Link
US (1) US5217944A (de)
EP (1) EP0474566B1 (de)
JP (1) JP3290191B2 (de)
DE (1) DE69114092T2 (de)
ES (1) ES2079616T3 (de)
FR (1) FR2665462B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2689524B1 (fr) * 1992-04-06 1994-05-13 Alcatel Alsthom Cie Gle Electric Procede de fabrication d'un lingot en oxyde supraconducteur a haute temperature critique.
DE69415716T2 (de) * 1993-05-10 1999-11-04 Int Superconductivity Tech Verfahren zur Herstellung eines Metalloxid-Kristalls
US5591698A (en) * 1994-12-29 1997-01-07 University Of Hawaii Low temperature (T lower than 950° C.) preparation of melt texture YBCO superconductors
US5611854A (en) * 1995-09-21 1997-03-18 The University Of Chicago Seed crystals with improved properties for melt processing superconductors for practical applications
JP3144675B2 (ja) * 1998-12-18 2001-03-12 財団法人国際超電導産業技術研究センター 酸化物超電導体及びその製造方法
CN113355734A (zh) * 2021-06-07 2021-09-07 上海工程技术大学 磁场诱导等温凝固过程中易轴织构的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2611411B1 (fr) * 1987-02-27 1989-04-21 Francois Joel Systeme de commutation de multiplex temporels hybrides
JPH0797454B2 (ja) * 1987-09-21 1995-10-18 株式会社半導体エネルギー研究所 超伝導材料の作製方法
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
JPH01108156A (ja) * 1987-10-20 1989-04-25 Sumitomo Heavy Ind Ltd 酸化物系超電導材の製造方法
DE68902853T2 (de) * 1988-03-21 1993-02-04 American Telephone & Telegraph Wachstum von supraleitermaterial aus einer flussmittel-schmelze, sowie fertigungsartikel.
JPH027309A (ja) * 1988-06-24 1990-01-11 Furukawa Electric Co Ltd:The 酸化物系超電導線条体の製造方法
US4990493A (en) * 1988-09-06 1991-02-05 General Electric Company Process of making an oriented polycrystal superconductor
US4939121A (en) * 1988-10-20 1990-07-03 General Dynamics Corporation, Electronics Division Method and apparatus for inducing grain orientation by magnetic and electric field ordering during bulk superconductor synthesis

Also Published As

Publication number Publication date
FR2665462A1 (fr) 1992-02-07
EP0474566B1 (de) 1995-10-25
EP0474566A2 (de) 1992-03-11
DE69114092D1 (de) 1995-11-30
US5217944A (en) 1993-06-08
FR2665462B1 (fr) 1997-08-29
JPH05132318A (ja) 1993-05-28
JP3290191B2 (ja) 2002-06-10
ES2079616T3 (es) 1996-01-16
EP0474566A3 (de) 1992-03-18

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