ES2069858T3 - Modulos de memoria en estado solido y dispositivos de memoria que comprenden dichos modulos. - Google Patents

Modulos de memoria en estado solido y dispositivos de memoria que comprenden dichos modulos.

Info

Publication number
ES2069858T3
ES2069858T3 ES91403267T ES91403267T ES2069858T3 ES 2069858 T3 ES2069858 T3 ES 2069858T3 ES 91403267 T ES91403267 T ES 91403267T ES 91403267 T ES91403267 T ES 91403267T ES 2069858 T3 ES2069858 T3 ES 2069858T3
Authority
ES
Spain
Prior art keywords
modules
memory
solid state
memory devices
state memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91403267T
Other languages
English (en)
Inventor
Givry Jacques De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Matra Marconi Space France SA
Original Assignee
Matra Marconi Space France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matra Marconi Space France SA filed Critical Matra Marconi Space France SA
Application granted granted Critical
Publication of ES2069858T3 publication Critical patent/ES2069858T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

MODULO DE MEMORIA QUE COMPRENDE SOBRE UN SUSTRATO (12) DE INTERCONEXION, VARIAS PULGAS DE MEMORIA DE SEMICONDUCTORES DE FORMA ALARGADA CUYAS SALIDAS ESTAN LOCALIZADAS EN LOS EXTREMOS. COMPRENDE AL MENOS DOS PULGAS (14, 16) APILADAS Y CRUZADAS.
ES91403267T 1990-12-05 1991-12-03 Modulos de memoria en estado solido y dispositivos de memoria que comprenden dichos modulos. Expired - Lifetime ES2069858T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9015210A FR2670322B1 (fr) 1990-12-05 1990-12-05 Modules de memoire a l'etat solide et dispositifs de memoire comportant de tels modules

Publications (1)

Publication Number Publication Date
ES2069858T3 true ES2069858T3 (es) 1995-05-16

Family

ID=9402909

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91403267T Expired - Lifetime ES2069858T3 (es) 1990-12-05 1991-12-03 Modulos de memoria en estado solido y dispositivos de memoria que comprenden dichos modulos.

Country Status (6)

Country Link
US (1) US5229960A (es)
EP (1) EP0489643B1 (es)
JP (1) JPH05121643A (es)
DE (1) DE69107808T2 (es)
ES (1) ES2069858T3 (es)
FR (1) FR2670322B1 (es)

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US6884657B1 (en) 1995-08-16 2005-04-26 Micron Technology, Inc. Angularly offset stacked die multichip device and method of manufacture
US5874781A (en) * 1995-08-16 1999-02-23 Micron Technology, Inc. Angularly offset stacked die multichip device and method of manufacture
US5721452A (en) * 1995-08-16 1998-02-24 Micron Technology, Inc. Angularly offset stacked die multichip device and method of manufacture
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JP3304921B2 (ja) 1999-06-18 2002-07-22 日本電気株式会社 半導体記憶装置
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US6376914B2 (en) * 1999-12-09 2002-04-23 Atmel Corporation Dual-die integrated circuit package
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JP3776427B2 (ja) * 2003-11-17 2006-05-17 沖電気工業株式会社 半導体装置及びその製造方法
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TWI233170B (en) * 2004-02-05 2005-05-21 United Microelectronics Corp Ultra-thin wafer level stack packaging method and structure using thereof
JP4538830B2 (ja) 2004-03-30 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置
US20050258527A1 (en) * 2004-05-24 2005-11-24 Chippac, Inc. Adhesive/spacer island structure for multiple die package
US8552551B2 (en) * 2004-05-24 2013-10-08 Chippac, Inc. Adhesive/spacer island structure for stacking over wire bonded die
US7863720B2 (en) 2004-05-24 2011-01-04 Honeywell International Inc. Method and system for stacking integrated circuits
US7700409B2 (en) * 2004-05-24 2010-04-20 Honeywell International Inc. Method and system for stacking integrated circuits
US20050269692A1 (en) * 2004-05-24 2005-12-08 Chippac, Inc Stacked semiconductor package having adhesive/spacer structure and insulation
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Also Published As

Publication number Publication date
DE69107808D1 (de) 1995-04-06
EP0489643B1 (fr) 1995-03-01
DE69107808T2 (de) 1995-06-29
US5229960A (en) 1993-07-20
FR2670322A1 (fr) 1992-06-12
FR2670322B1 (fr) 1997-07-04
EP0489643A1 (fr) 1992-06-10
JPH05121643A (ja) 1993-05-18

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