ES2019008A6 - Process for plasma-deposition of multiple layers of amorphous material, having a variable composition - Google Patents
Process for plasma-deposition of multiple layers of amorphous material, having a variable compositionInfo
- Publication number
- ES2019008A6 ES2019008A6 ES8904405A ES8904405A ES2019008A6 ES 2019008 A6 ES2019008 A6 ES 2019008A6 ES 8904405 A ES8904405 A ES 8904405A ES 8904405 A ES8904405 A ES 8904405A ES 2019008 A6 ES2019008 A6 ES 2019008A6
- Authority
- ES
- Spain
- Prior art keywords
- deposition
- variable composition
- plasma
- multiple layers
- amorphous material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000010494 dissociation reaction Methods 0.000 abstract 1
- 230000005593 dissociations Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
Structures of amorphous materials constituted by a plurality of thin layers of variable composition are prepared by means of a process using a glow discharge in one single reactor and without the mixture of the reactant gases being varied during the deposition by changing the voltage during the course of the deposition so as to induce dissociation of the gases and deposit successive layers comprising silicon, carbon, oxygen, nitrogen, germanium and/or hydrogen. The preparation is disclosed of multilayer structures, which can be used in photovoltaic devices and in electronics.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8822731A IT1227877B (en) | 1988-11-25 | 1988-11-25 | PROCEDURE FOR PLASMA DEPOSITION OF MULTIPLE LAYERS SIZED AMORPHOUS VARIABLE COMPOSITION |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2019008A6 true ES2019008A6 (en) | 1991-05-16 |
Family
ID=11199778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES8904405A Expired - Lifetime ES2019008A6 (en) | 1988-11-25 | 1989-11-24 | Process for plasma-deposition of multiple layers of amorphous material, having a variable composition |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPH02184023A (en) |
| BE (1) | BE1003603A3 (en) |
| CH (1) | CH677365A5 (en) |
| DE (1) | DE3938956A1 (en) |
| DK (1) | DK562789A (en) |
| ES (1) | ES2019008A6 (en) |
| FR (1) | FR2639653B1 (en) |
| GB (1) | GB2225344B (en) |
| IT (1) | IT1227877B (en) |
| LU (1) | LU87626A1 (en) |
| NL (1) | NL8902779A (en) |
| SE (1) | SE8903769L (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2306510B (en) * | 1995-11-02 | 1999-06-23 | Univ Surrey | Modification of metal surfaces |
| US6203898B1 (en) | 1997-08-29 | 2001-03-20 | 3M Innovatave Properties Company | Article comprising a substrate having a silicone coating |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4485125A (en) * | 1982-03-19 | 1984-11-27 | Energy Conversion Devices, Inc. | Method for continuously producing tandem amorphous photovoltaic cells |
| EP0106637B1 (en) * | 1982-10-12 | 1988-02-17 | National Research Development Corporation | Infra red transparent optical components |
| JPS6066422A (en) * | 1983-09-21 | 1985-04-16 | Kanegafuchi Chem Ind Co Ltd | Manufacture of semiconductor |
| KR890004881B1 (en) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | Plasma treating method and device thereof |
| DE3577730D1 (en) * | 1984-03-03 | 1990-06-21 | Stc Plc | COATING PROCESS. |
| US4616597A (en) * | 1984-10-31 | 1986-10-14 | Rca Corporation | Apparatus for making a plasma coating |
| US4637895A (en) * | 1985-04-01 | 1987-01-20 | Energy Conversion Devices, Inc. | Gas mixtures for the vapor deposition of semiconductor material |
| GB2175016B (en) * | 1985-05-11 | 1990-01-24 | Barr & Stroud Ltd | Optical coating |
| US4719123A (en) * | 1985-08-05 | 1988-01-12 | Sanyo Electric Co., Ltd. | Method for fabricating periodically multilayered film |
| JP2686928B2 (en) * | 1985-08-26 | 1997-12-08 | アンリツ株式会社 | Silicon-germanium mixed crystal thin film conductor |
| JPH0651909B2 (en) * | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | Method of forming thin film multilayer structure |
| GB8620346D0 (en) * | 1986-08-21 | 1986-10-01 | Special Research Systems Ltd | Chemical vapour deposition of films |
| US4887134A (en) * | 1986-09-26 | 1989-12-12 | Canon Kabushiki Kaisha | Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded |
| CH668145A5 (en) * | 1986-09-26 | 1988-11-30 | Inst Microtechnique De L Unive | PROCESS AND INSTALLATION FOR DEPOSITION OF HYDROGEN AMORPHOUS SILICON ON A SUBSTRATE IN A PLASMA ENCLOSURE. |
| DE58904540D1 (en) * | 1988-03-24 | 1993-07-08 | Siemens Ag | METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR LAYERS CONSISTING OF AMORPHOUS SILICON-GERMANIUM ALLOYS BY GLIMMENT CHARGING TECHNOLOGY, ESPECIALLY FOR SOLAR CELLS. |
-
1988
- 1988-11-25 IT IT8822731A patent/IT1227877B/en active
-
1989
- 1989-11-02 GB GB8924713A patent/GB2225344B/en not_active Expired - Fee Related
- 1989-11-09 NL NL8902779A patent/NL8902779A/en not_active Application Discontinuation
- 1989-11-10 SE SE8903769A patent/SE8903769L/en not_active Application Discontinuation
- 1989-11-10 DK DK562789A patent/DK562789A/en not_active Application Discontinuation
- 1989-11-13 CH CH4084/89A patent/CH677365A5/it not_active IP Right Cessation
- 1989-11-22 LU LU87626A patent/LU87626A1/en unknown
- 1989-11-22 FR FR898915349A patent/FR2639653B1/en not_active Expired - Fee Related
- 1989-11-24 DE DE3938956A patent/DE3938956A1/en not_active Ceased
- 1989-11-24 JP JP1303427A patent/JPH02184023A/en active Pending
- 1989-11-24 ES ES8904405A patent/ES2019008A6/en not_active Expired - Lifetime
- 1989-11-24 BE BE8901259A patent/BE1003603A3/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02184023A (en) | 1990-07-18 |
| IT8822731A0 (en) | 1988-11-25 |
| IT1227877B (en) | 1991-05-14 |
| LU87626A1 (en) | 1990-06-12 |
| FR2639653A1 (en) | 1990-06-01 |
| FR2639653B1 (en) | 1991-06-21 |
| GB2225344B (en) | 1993-01-27 |
| BE1003603A3 (en) | 1992-05-05 |
| NL8902779A (en) | 1990-06-18 |
| CH677365A5 (en) | 1991-05-15 |
| DK562789D0 (en) | 1989-11-10 |
| GB8924713D0 (en) | 1989-12-20 |
| DK562789A (en) | 1990-05-26 |
| GB2225344A (en) | 1990-05-30 |
| SE8903769D0 (en) | 1989-11-10 |
| DE3938956A1 (en) | 1990-05-31 |
| SE8903769L (en) | 1990-05-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SA6 | Expiration date (snapshot 920101) |
Free format text: 2009-11-24 |
|
| FD1A | Patent lapsed |
Effective date: 20100528 |