DK562789A - METHOD FOR PLASMA DISPOSAL OF MULTIPLE LAYERS OF AMORFT MATERIAL AND VARIABLE COMPOSITION - Google Patents

METHOD FOR PLASMA DISPOSAL OF MULTIPLE LAYERS OF AMORFT MATERIAL AND VARIABLE COMPOSITION

Info

Publication number
DK562789A
DK562789A DK562789A DK562789A DK562789A DK 562789 A DK562789 A DK 562789A DK 562789 A DK562789 A DK 562789A DK 562789 A DK562789 A DK 562789A DK 562789 A DK562789 A DK 562789A
Authority
DK
Denmark
Prior art keywords
amorft
multiple layers
variable composition
plasma disposal
disposal
Prior art date
Application number
DK562789A
Other languages
Danish (da)
Other versions
DK562789D0 (en
Inventor
Dario Della Sala
Ciro Ostrifate
Original Assignee
Eniricerche Spa
Agip Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eniricerche Spa, Agip Spa filed Critical Eniricerche Spa
Publication of DK562789D0 publication Critical patent/DK562789D0/en
Publication of DK562789A publication Critical patent/DK562789A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
DK562789A 1988-11-25 1989-11-10 METHOD FOR PLASMA DISPOSAL OF MULTIPLE LAYERS OF AMORFT MATERIAL AND VARIABLE COMPOSITION DK562789A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8822731A IT1227877B (en) 1988-11-25 1988-11-25 PROCEDURE FOR PLASMA DEPOSITION OF MULTIPLE LAYERS SIZED AMORPHOUS VARIABLE COMPOSITION

Publications (2)

Publication Number Publication Date
DK562789D0 DK562789D0 (en) 1989-11-10
DK562789A true DK562789A (en) 1990-05-26

Family

ID=11199778

Family Applications (1)

Application Number Title Priority Date Filing Date
DK562789A DK562789A (en) 1988-11-25 1989-11-10 METHOD FOR PLASMA DISPOSAL OF MULTIPLE LAYERS OF AMORFT MATERIAL AND VARIABLE COMPOSITION

Country Status (12)

Country Link
JP (1) JPH02184023A (en)
BE (1) BE1003603A3 (en)
CH (1) CH677365A5 (en)
DE (1) DE3938956A1 (en)
DK (1) DK562789A (en)
ES (1) ES2019008A6 (en)
FR (1) FR2639653B1 (en)
GB (1) GB2225344B (en)
IT (1) IT1227877B (en)
LU (1) LU87626A1 (en)
NL (1) NL8902779A (en)
SE (1) SE8903769L (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2306510B (en) * 1995-11-02 1999-06-23 Univ Surrey Modification of metal surfaces
US6203898B1 (en) 1997-08-29 2001-03-20 3M Innovatave Properties Company Article comprising a substrate having a silicone coating

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485125A (en) * 1982-03-19 1984-11-27 Energy Conversion Devices, Inc. Method for continuously producing tandem amorphous photovoltaic cells
EP0106637B1 (en) * 1982-10-12 1988-02-17 National Research Development Corporation Infra red transparent optical components
JPS6066422A (en) * 1983-09-21 1985-04-16 Kanegafuchi Chem Ind Co Ltd Manufacture of semiconductor
KR890004881B1 (en) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 Plasma treating method and device thereof
DE3577730D1 (en) * 1984-03-03 1990-06-21 Stc Plc COATING PROCESS.
US4616597A (en) * 1984-10-31 1986-10-14 Rca Corporation Apparatus for making a plasma coating
US4637895A (en) * 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
GB2175016B (en) * 1985-05-11 1990-01-24 Barr & Stroud Ltd Optical coating
US4719123A (en) * 1985-08-05 1988-01-12 Sanyo Electric Co., Ltd. Method for fabricating periodically multilayered film
JP2686928B2 (en) * 1985-08-26 1997-12-08 アンリツ株式会社 Silicon-germanium mixed crystal thin film conductor
JPH0651909B2 (en) * 1985-12-28 1994-07-06 キヤノン株式会社 Method of forming thin film multilayer structure
GB8620346D0 (en) * 1986-08-21 1986-10-01 Special Research Systems Ltd Chemical vapour deposition of films
US4887134A (en) * 1986-09-26 1989-12-12 Canon Kabushiki Kaisha Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
CH668145A5 (en) * 1986-09-26 1988-11-30 Inst Microtechnique De L Unive PROCESS AND INSTALLATION FOR DEPOSITION OF HYDROGEN AMORPHOUS SILICON ON A SUBSTRATE IN A PLASMA ENCLOSURE.
DE58904540D1 (en) * 1988-03-24 1993-07-08 Siemens Ag METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR LAYERS CONSISTING OF AMORPHOUS SILICON-GERMANIUM ALLOYS BY GLIMMENT CHARGING TECHNOLOGY, ESPECIALLY FOR SOLAR CELLS.

Also Published As

Publication number Publication date
JPH02184023A (en) 1990-07-18
IT8822731A0 (en) 1988-11-25
IT1227877B (en) 1991-05-14
LU87626A1 (en) 1990-06-12
FR2639653A1 (en) 1990-06-01
FR2639653B1 (en) 1991-06-21
GB2225344B (en) 1993-01-27
BE1003603A3 (en) 1992-05-05
NL8902779A (en) 1990-06-18
CH677365A5 (en) 1991-05-15
DK562789D0 (en) 1989-11-10
ES2019008A6 (en) 1991-05-16
GB8924713D0 (en) 1989-12-20
GB2225344A (en) 1990-05-30
SE8903769D0 (en) 1989-11-10
DE3938956A1 (en) 1990-05-31
SE8903769L (en) 1990-05-26

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Legal Events

Date Code Title Description
AHB Application shelved due to non-payment