GB8924713D0 - Process for plasma-deposition of multiple layers of amorphous material,having a variable composition - Google Patents

Process for plasma-deposition of multiple layers of amorphous material,having a variable composition

Info

Publication number
GB8924713D0
GB8924713D0 GB898924713A GB8924713A GB8924713D0 GB 8924713 D0 GB8924713 D0 GB 8924713D0 GB 898924713 A GB898924713 A GB 898924713A GB 8924713 A GB8924713 A GB 8924713A GB 8924713 D0 GB8924713 D0 GB 8924713D0
Authority
GB
United Kingdom
Prior art keywords
deposition
plasma
multiple layers
amorphous material
variable composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB898924713A
Other versions
GB2225344B (en
GB2225344A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agip SpA
Eni Tecnologie SpA
Original Assignee
Agip SpA
Eniricerche SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agip SpA, Eniricerche SpA filed Critical Agip SpA
Publication of GB8924713D0 publication Critical patent/GB8924713D0/en
Publication of GB2225344A publication Critical patent/GB2225344A/en
Application granted granted Critical
Publication of GB2225344B publication Critical patent/GB2225344B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
GB8924713A 1988-11-25 1989-11-02 Process for plasma-deposition of multiple layers of amorphous material Expired - Fee Related GB2225344B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8822731A IT1227877B (en) 1988-11-25 1988-11-25 PROCEDURE FOR PLASMA DEPOSITION OF MULTIPLE LAYERS SIZED AMORPHOUS VARIABLE COMPOSITION

Publications (3)

Publication Number Publication Date
GB8924713D0 true GB8924713D0 (en) 1989-12-20
GB2225344A GB2225344A (en) 1990-05-30
GB2225344B GB2225344B (en) 1993-01-27

Family

ID=11199778

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8924713A Expired - Fee Related GB2225344B (en) 1988-11-25 1989-11-02 Process for plasma-deposition of multiple layers of amorphous material

Country Status (12)

Country Link
JP (1) JPH02184023A (en)
BE (1) BE1003603A3 (en)
CH (1) CH677365A5 (en)
DE (1) DE3938956A1 (en)
DK (1) DK562789A (en)
ES (1) ES2019008A6 (en)
FR (1) FR2639653B1 (en)
GB (1) GB2225344B (en)
IT (1) IT1227877B (en)
LU (1) LU87626A1 (en)
NL (1) NL8902779A (en)
SE (1) SE8903769L (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2306510B (en) * 1995-11-02 1999-06-23 Univ Surrey Modification of metal surfaces
US6203898B1 (en) 1997-08-29 2001-03-20 3M Innovatave Properties Company Article comprising a substrate having a silicone coating

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485125A (en) * 1982-03-19 1984-11-27 Energy Conversion Devices, Inc. Method for continuously producing tandem amorphous photovoltaic cells
EP0106637B1 (en) * 1982-10-12 1988-02-17 National Research Development Corporation Infra red transparent optical components
JPS6066422A (en) * 1983-09-21 1985-04-16 Kanegafuchi Chem Ind Co Ltd Manufacture of semiconductor
KR890004881B1 (en) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 Plasma treating method and device thereof
DE3577730D1 (en) * 1984-03-03 1990-06-21 Stc Plc COATING PROCESS.
US4616597A (en) * 1984-10-31 1986-10-14 Rca Corporation Apparatus for making a plasma coating
US4637895A (en) * 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
GB2175016B (en) * 1985-05-11 1990-01-24 Barr & Stroud Ltd Optical coating
US4719123A (en) * 1985-08-05 1988-01-12 Sanyo Electric Co., Ltd. Method for fabricating periodically multilayered film
JP2686928B2 (en) * 1985-08-26 1997-12-08 アンリツ株式会社 Silicon-germanium mixed crystal thin film conductor
JPH0651909B2 (en) * 1985-12-28 1994-07-06 キヤノン株式会社 Method of forming thin film multilayer structure
GB8620346D0 (en) * 1986-08-21 1986-10-01 Special Research Systems Ltd Chemical vapour deposition of films
US4887134A (en) * 1986-09-26 1989-12-12 Canon Kabushiki Kaisha Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
CH668145A5 (en) * 1986-09-26 1988-11-30 Inst Microtechnique De L Unive PROCESS AND INSTALLATION FOR DEPOSITION OF HYDROGEN AMORPHOUS SILICON ON A SUBSTRATE IN A PLASMA ENCLOSURE.
DE58904540D1 (en) * 1988-03-24 1993-07-08 Siemens Ag METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR LAYERS CONSISTING OF AMORPHOUS SILICON-GERMANIUM ALLOYS BY GLIMMENT CHARGING TECHNOLOGY, ESPECIALLY FOR SOLAR CELLS.

Also Published As

Publication number Publication date
JPH02184023A (en) 1990-07-18
IT8822731A0 (en) 1988-11-25
IT1227877B (en) 1991-05-14
LU87626A1 (en) 1990-06-12
FR2639653A1 (en) 1990-06-01
FR2639653B1 (en) 1991-06-21
GB2225344B (en) 1993-01-27
BE1003603A3 (en) 1992-05-05
NL8902779A (en) 1990-06-18
CH677365A5 (en) 1991-05-15
DK562789D0 (en) 1989-11-10
ES2019008A6 (en) 1991-05-16
DK562789A (en) 1990-05-26
GB2225344A (en) 1990-05-30
SE8903769D0 (en) 1989-11-10
DE3938956A1 (en) 1990-05-31
SE8903769L (en) 1990-05-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941102