GB2225344A - Process for plasma-deposition of multiple layers of amorphous material, having a variable composition - Google Patents
Process for plasma-deposition of multiple layers of amorphous material, having a variable composition Download PDFInfo
- Publication number
- GB2225344A GB2225344A GB8924713A GB8924713A GB2225344A GB 2225344 A GB2225344 A GB 2225344A GB 8924713 A GB8924713 A GB 8924713A GB 8924713 A GB8924713 A GB 8924713A GB 2225344 A GB2225344 A GB 2225344A
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- United Kingdom
- Prior art keywords
- nitrogen
- deposition
- process according
- voltage
- gases
- Prior art date
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- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 17
- 239000000463 material Substances 0.000 title description 5
- 239000007789 gas Substances 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000010494 dissociation reaction Methods 0.000 claims description 3
- 230000005593 dissociations Effects 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 150000004756 silanes Chemical class 0.000 claims description 2
- 239000003085 diluting agent Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000000864 Auger spectrum Methods 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- -1 germanes Chemical class 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
Description
A 1 4 r.) 22M344 CASE 2941 "PROCESS FOR PLASMA-DEPOSITION OF MULTIPLE
LAYERS OF AMORPHOUS MATERIAL, HAVING A VARIABLE COMPOSITION" The object of the present invention is preparing, by means of a plasma deposition in phase, structures of amorphous materials constituted by plurality of thin layers of different compositi find practical use in electronic and opto-electronic devices, such as disclosed, e.g., in "Semiconductors and Semimetals", vol. 21 part C, page 407, J.I. Pankove ed., Academic Press (NY), 1984.
At present, in order to prepare these structures by means change the flowrates reaction chamber, a process fo gaseous a ont, which muLti-Layer it is usual to of the gas streams fed to the or move the substrate from a reaction chamber to another reaction chamber, with each one of said reaction chambers containing a prefixed gas mixture. The gases are dissociated by applying an a.c. voltage to the eLectrodes (of frequency comprised within the range of from 103 to 107 Hz), with a peak-to-peak value of the order of from 102 to 103 Volts.
In the first case, a hydrodynamic perturbation to the gas flow is introduced, and the compLete stabilization has to be waited for, before the deposition of each Layer may take place; in the second case, a not negligible time interval exists in order to transfer the sampLe from chamber to chamber.
These drawbacks are overcome by the present invention, which consists in a process for accompLishing muLtiLayer structures in one singLe reactor, without the composition of the gas mixtures being varied during the deposition.
of a alow elischarce 2.
In accordance therewith, the presen relates to a glow-discharge process for the multiple, amorphous, layers of variable which contain silicon, carbon, oxygen, germanium, hydrogen, characterized in that:
- a gas mixture is used, which is constituted by two gases belonging to two different classes selected from among silanes, germanes, hydrocarbons, nitrogencontaining gases (such as nitrogen, nitric oxide and nitrogen dioxide, ammonia); the voltage applied to the elect changed during the course of the induce a modulated dissociation compose the mixture, and to of silicon, carbon, oxygen.
hydrogen, having a modulated all of the other reactor (presssure, feeding temperature) remain the individual layers.
By suitably fixing the time intervals during which the voltage is kept constant, the thickness of the layers can be controlled as desired, whilst by selecting suitable values of voltage applied to electrodes, the of each individual layer can be changed.
the process calls for the deposition via layers of amorphous material, in such structures as follows:
Ge...
t invention deposition of composition, nitrogen, rodes of the reactor is deposition, so as to of said gases which deposit successive Layers nitrogen, germanium, composition; presetting parameters fLowrates and substrate unchanged during the deposition of composition Therefore., plasma of particular si 1 - X si m u 1 t i p 1 e accomplishing Ge si X 1 y c si Ge y c 1 S i 1 - Z S i j 3.
1 - X S i 1 - x S i 1 - x X 1-Y y 1 - z z wherein x and y, z,... are numeraLs different from one another, and comprised within the range of from 0 to 1.
If instead of attaining intrinsic Layers, one desires to obtain doped Layers, to the binary mixture such doping gases, as phosphine, arsine or diborane shouLd be added. The binary mixture can be diLuted by using inert gases, or hydrogen.
Furthermore, if the change in eLectrode feeding voLtage is not sharp, but said voLtage is varied according to a monotonicaLLy increasing or decreasing Law with time, Layers with composition gradients or doping gradients can be produced.
The changes in eLectrode voLtage take pLace within the range of vaLues of from 100 to 10,000 VoLts. Under the preferred conditions, the voLtage change over time is comprised within the range of from 100 to 2,000 V.
The substrates on which these structures can be deposited may be very different from one another, such as, e.g., gLass or gLass coated with metaL oxides or metaL, as a function of the intended use of the muLtiLayer structures in eLectronic or optoeLectronic components.
The foLLowing exampLes are not Limitative and are reported in order to better cLarify the invention.
gnmplf 1 In order to carry out a diagnostic measurement of X N X 0 1 - y y 1 - z N si S i 1 - Y y 1 - z 0 S i z N...
z 0...
function of fiLm thickness, a substrate is used, which is constituted by a thin silicon plate of 40 x 40 x 0.3 mm of size. The substrate is charged to the reactor for pLasma-depositions, and is cleaned as follows.
Inside the deposition chamber a vacuum better than 10-7 Torr is made, and then hydrogen under a pressure of 300 mTorr is fed at a fLowrate of 20 SCCM (standard cubic centimetres per minute). The support is heated up to 2500C and is cleaned for 10 minutes by means of a discharge in hydrogen, with the electrodes being fed with an a.c. of 1, 200 V peak-to-peak.
When the cleaning discharge is ended., the reactor is evacuated again, with the temperature of 2500C being maintained, and then to it a mixture of germane (GeH4) and siLane (SiH4) is charged at a total fLowrate of 20 sccm, with both said gases fed being pre-diLuted at the dilution ratio of 1:10 in hydrogen, and at a pressure of 100 mTorr. The relative ratios of the feeding fLowrates are of 20% for germane and 80% for siLane. ALL these conditions are kept constant during the deposition, which is started by supplying a voltage of 1,200 V to the electrodes by means of a radio-frequency generator oscillating at 13.56 MHz. After a 10-minute discharge, the deposition is obtained of a Layer of approximately 1,000 A of thickness, of a germanium-siLicon alloy, wherein the atomic fraction of germanium is 0.4, and the atomi c minute time, the value of the voltage at the electrodes is decreased to 400 V, and this voltage is applied for a further 10 minutes: in such a way, a Layer of germanium- fraction of silicon si 0.6. At the end of the 10- 4.
5.
silicon of 700 A of thickness is obtained, wherein the atomic fraction of both silicon and germanium is Going on alternatively changing the voltage to the electrodes between the values of 1,200 V V, and keeping constant the times during which voltage is maintained at each one of said voltage a periodic multilayer structure of Ge si 0.5 0.5 G e S i 0.4 0.6 5 is obtained, which has a thickness of about 1 m At the end of the deposition the sample and is extracted from the In the upper portion of Figure 1, the composition of t h e deposited muLtiLayer i s reported, w i t h s a i d composition being measured by means of an as a function of the thickness. On the percentage of silicon or of germanium is recorded Line 1 reLates to silicon, and Li germanium. The Lines show the ten Layers germanium alloy, the composition of which aLternat changes between 60% of silicon and 40% of germanium 50% of silicon and 50% of germanium, starting from outermost Layer 3, down to the Layer into di with the substrate 4. The Last portion of the 100% of silicon) shows the composition of the substrate.
0. 5. a p p 1 i e d and 400 the values, i S c o o 1 e d reactor.
I n t h e reported, whi a function of t A substrate is Auger analysis ordinate, renorted.
t h e The ne 2 relates to o f si l i conively and t h c rect contact lines (with underlying bottom portion of the figure the chart is ch shows the values of electrode voltage as ime in correspondence of the layers.
gx2Lnplf 2 cleaned and treated under the same It 1 1 6.
conditions as of Example 1.
In this case, however, the reactant gas is a siLanemethane mixture at a pressure of 370 mTorr, fed at a total fLowrate of 20 sccm. The relative ratios of the fLowrates are 40% for methane and 60% for siLane.
The growth of the film is started by supplying a voltage of 1,300 V to the electrodes, for 10 minutes. Under these conditions, a Layer of about 800 A of silicon carbide is obtained, wherein the atomic fraction of carbon is 0.1, and the atomic fraction of silicon is 0.9.
Then, by Lowering the voltage down to 600 V, and maintaining it at this value for 15 minutes, a Layer of about 400 A of silicon is obtained.
By repeating this Process for a further 4 times, a multi Layer structure of Si C Si 0.9 0.1 1 5 of about 6,000 A of thickness is obtained.
In Figure 2, the Auger spectrum as a function of thickness is reported analogously to ExampLe 1. The Line 1 relates to silicon and Line 2 relates to carbon; 3 is the outermost Layer and 4 is the Layer into direct contact with the substrate. The bottom portion of Figure 2 shows the value of peak-to-peak voltage as a function of time.
The thickness c h a r t, structure thickness o t h e r.
chart showing the composition as a function of is out of phase relatively to the voltage-time in that the two materials which constitute the have growth rates (i.e., ratios of layer to growth time) which are different from each 0 - k 1
Claims (8)
1. A glow-discharge process for the deposition of layers which comprise silicon, carbon, oxygen.
nitrogen, germanium and/or hydrogen. wherein:
there is used a gas mixture which comprises at least two gases belonging to at least two different classes selected from silanes, germanesi hydrocarbons.
and nitrogen-containing gases; the voltage is changed during the course of the deposition so as to induce dissociation of said gases and so as to deposit successive layers comprising silicon, carbon, oxygen, nitrogen, germanium andlor hydrogen; and the other parameters remain unchanged during the deposition of the individual layers.
2. A process according to claim 1, wherein the gas mixture contains a doping gas.
3. A process according to claim 1 or 2, wherein the gas mixture contains an inert gas diluent.
4. A process according to any of claims 1 to 3, wherein the voltage is increased as a function of time.
5. A process according to any of claims 1 to 3, wherein the voltage is decreased as a function of time.
6. A process according to any of claims 1 to 5r wherein the voltage is from 100 to 2.000 V.
7. A process according to any of claims 1 to 6, wherein the nitrogen-containing gas is selected from nitrogen, nitric oxide, nitrogen dioxide and ammonia.
8. A process according to claim 1. substantially as described in either of the foregoing Examp-Les.
C' -IR- . GLow-discharge process for the deposition of muLtipLe, amorphous, Layers of variabLe composition, which contain siLicon, carbon, oxygen, nitrogen, germanium, hydrogen, characterized in that:
- a gas mixture is used, which is constituted by two gases beLonging to two different cLasses seLected from among:
si Lanes, germanes, hydrocarbons, nitrogen-containing gases (such as nitrogen, nitric oxide and nitrogen dioxide, ammonia); the voLtage appLied to the eLectrodes of the reactor is changed during the course of the deposition, so as to induce a moduLated dissociation of said gases which compose the mixture, and to deposit successive Layers of siLicon, carbon, oxygen, nitrogen, germanium, hydrogen, having a moduLated composition; aLL of the other reactor presetting parameters (presssure, feeding fLowrates and substrate temperature) remain unchanged during the deposition of the individuaL Layers.
Published 1990&tniePatentOffice, State House,66.171 High Holborn, London WCIR 4TP. Further copies maybe obtainedfrom The Patent officeSales Branch, St Mary Cray, Orpington, Kent BR5 3RD. Printed by Multiplex techniques ltd, St Mary Cray, Kent, Con- 1/87 Z1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8822731A IT1227877B (en) | 1988-11-25 | 1988-11-25 | PROCEDURE FOR PLASMA DEPOSITION OF MULTIPLE LAYERS SIZED AMORPHOUS VARIABLE COMPOSITION |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8924713D0 GB8924713D0 (en) | 1989-12-20 |
| GB2225344A true GB2225344A (en) | 1990-05-30 |
| GB2225344B GB2225344B (en) | 1993-01-27 |
Family
ID=11199778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8924713A Expired - Fee Related GB2225344B (en) | 1988-11-25 | 1989-11-02 | Process for plasma-deposition of multiple layers of amorphous material |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPH02184023A (en) |
| BE (1) | BE1003603A3 (en) |
| CH (1) | CH677365A5 (en) |
| DE (1) | DE3938956A1 (en) |
| DK (1) | DK562789A (en) |
| ES (1) | ES2019008A6 (en) |
| FR (1) | FR2639653B1 (en) |
| GB (1) | GB2225344B (en) |
| IT (1) | IT1227877B (en) |
| LU (1) | LU87626A1 (en) |
| NL (1) | NL8902779A (en) |
| SE (1) | SE8903769L (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2306510A (en) * | 1995-11-02 | 1997-05-07 | Univ Surrey | modification of metal surfaces |
| US6203898B1 (en) | 1997-08-29 | 2001-03-20 | 3M Innovatave Properties Company | Article comprising a substrate having a silicone coating |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2117800A (en) * | 1982-03-19 | 1983-10-19 | Energy Conversion Devices Inc | Manufacture of tandem amorphous photovoltaic devices |
| GB2129833A (en) * | 1982-10-12 | 1984-05-23 | Secr Defence | Method and apparatus for depositing coatings in a glow discharge |
| EP0140130A2 (en) * | 1983-09-21 | 1985-05-08 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Process and apparatus for preparing semiconductor layer |
| US4616597A (en) * | 1984-10-31 | 1986-10-14 | Rca Corporation | Apparatus for making a plasma coating |
| GB2194556A (en) * | 1986-08-21 | 1988-03-09 | Special Research Systems Limit | Plasma enhanced chemical vapour deposition of films |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR890004881B1 (en) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | Plasma treating method and device thereof |
| ATE52814T1 (en) * | 1984-03-03 | 1990-06-15 | Stc Plc | COATING PROCESS. |
| US4637895A (en) * | 1985-04-01 | 1987-01-20 | Energy Conversion Devices, Inc. | Gas mixtures for the vapor deposition of semiconductor material |
| GB2175016B (en) * | 1985-05-11 | 1990-01-24 | Barr & Stroud Ltd | Optical coating |
| US4719123A (en) * | 1985-08-05 | 1988-01-12 | Sanyo Electric Co., Ltd. | Method for fabricating periodically multilayered film |
| JP2686928B2 (en) * | 1985-08-26 | 1997-12-08 | アンリツ株式会社 | Silicon-germanium mixed crystal thin film conductor |
| JPH0651909B2 (en) * | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | Method of forming thin film multilayer structure |
| CH668145A5 (en) * | 1986-09-26 | 1988-11-30 | Inst Microtechnique De L Unive | PROCESS AND INSTALLATION FOR DEPOSITION OF HYDROGEN AMORPHOUS SILICON ON A SUBSTRATE IN A PLASMA ENCLOSURE. |
| US4887134A (en) * | 1986-09-26 | 1989-12-12 | Canon Kabushiki Kaisha | Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded |
| DE58904540D1 (en) * | 1988-03-24 | 1993-07-08 | Siemens Ag | METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR LAYERS CONSISTING OF AMORPHOUS SILICON-GERMANIUM ALLOYS BY GLIMMENT CHARGING TECHNOLOGY, ESPECIALLY FOR SOLAR CELLS. |
-
1988
- 1988-11-25 IT IT8822731A patent/IT1227877B/en active
-
1989
- 1989-11-02 GB GB8924713A patent/GB2225344B/en not_active Expired - Fee Related
- 1989-11-09 NL NL8902779A patent/NL8902779A/en not_active Application Discontinuation
- 1989-11-10 DK DK562789A patent/DK562789A/en not_active Application Discontinuation
- 1989-11-10 SE SE8903769A patent/SE8903769L/en not_active Application Discontinuation
- 1989-11-13 CH CH4084/89A patent/CH677365A5/it not_active IP Right Cessation
- 1989-11-22 FR FR898915349A patent/FR2639653B1/en not_active Expired - Fee Related
- 1989-11-22 LU LU87626A patent/LU87626A1/en unknown
- 1989-11-24 JP JP1303427A patent/JPH02184023A/en active Pending
- 1989-11-24 BE BE8901259A patent/BE1003603A3/en not_active IP Right Cessation
- 1989-11-24 ES ES8904405A patent/ES2019008A6/en not_active Expired - Lifetime
- 1989-11-24 DE DE3938956A patent/DE3938956A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2117800A (en) * | 1982-03-19 | 1983-10-19 | Energy Conversion Devices Inc | Manufacture of tandem amorphous photovoltaic devices |
| GB2129833A (en) * | 1982-10-12 | 1984-05-23 | Secr Defence | Method and apparatus for depositing coatings in a glow discharge |
| EP0140130A2 (en) * | 1983-09-21 | 1985-05-08 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Process and apparatus for preparing semiconductor layer |
| US4616597A (en) * | 1984-10-31 | 1986-10-14 | Rca Corporation | Apparatus for making a plasma coating |
| GB2194556A (en) * | 1986-08-21 | 1988-03-09 | Special Research Systems Limit | Plasma enhanced chemical vapour deposition of films |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2306510A (en) * | 1995-11-02 | 1997-05-07 | Univ Surrey | modification of metal surfaces |
| GB2306510B (en) * | 1995-11-02 | 1999-06-23 | Univ Surrey | Modification of metal surfaces |
| US6203898B1 (en) | 1997-08-29 | 2001-03-20 | 3M Innovatave Properties Company | Article comprising a substrate having a silicone coating |
| US6348237B2 (en) | 1997-08-29 | 2002-02-19 | 3M Innovative Properties Company | Jet plasma process for deposition of coatings |
| US7189436B2 (en) | 1997-08-29 | 2007-03-13 | 3M Innovative Properties Company | Flash evaporation-plasma coating deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2225344B (en) | 1993-01-27 |
| DE3938956A1 (en) | 1990-05-31 |
| DK562789D0 (en) | 1989-11-10 |
| GB8924713D0 (en) | 1989-12-20 |
| SE8903769L (en) | 1990-05-26 |
| IT8822731A0 (en) | 1988-11-25 |
| SE8903769D0 (en) | 1989-11-10 |
| NL8902779A (en) | 1990-06-18 |
| FR2639653B1 (en) | 1991-06-21 |
| CH677365A5 (en) | 1991-05-15 |
| ES2019008A6 (en) | 1991-05-16 |
| BE1003603A3 (en) | 1992-05-05 |
| JPH02184023A (en) | 1990-07-18 |
| IT1227877B (en) | 1991-05-14 |
| FR2639653A1 (en) | 1990-06-01 |
| LU87626A1 (en) | 1990-06-12 |
| DK562789A (en) | 1990-05-26 |
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Legal Events
| Date | Code | Title | Description |
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| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19941102 |