Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
  • G01N29/14—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
  • G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
  • G01N29/46—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by spectral analysis, e.g. Fourier analysis or wavelet analysis
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67242—Apparatus for monitoring, sorting or marking
  • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
  • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
  • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
  • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
  • H01L22/10—Measuring as part of the manufacturing process
  • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N2291/00—Indexing codes associated with group G01N29/00
  • G01N2291/26—Scanned objects
  • G01N2291/269—Various geometry objects
  • G01N2291/2697—Wafer or (micro)electronic parts
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
  • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Definitions

• the present invention relates to the detection of the fracture ("splitting" according to the English terminology) of a substrate previously weakened by an implantation of atomic species, and its application to the monitoring of a heat treatment applied to said substrate to cause said fracture.
• the Smart Cut TM process makes it possible to transfer a layer of a first substrate, referred to as a donor substrate, to a second substrate, referred to as a receiving substrate.
• the method comprises a step of implanting atomic species into the donor substrate, so as to form an embrittlement zone located at a depth corresponding to the thickness of the layer to be transferred.
• Said atomic species are typically hydrogen and / or helium.
• the implanted species create defects called "micro-fissures", in the form of cavities extending in a plane parallel to the main surface of the donor substrate.
• the donor substrate is then assembled to the receiving substrate.
• a thermal fracture step is then carried out, in which the plate resulting from the assembly of the donor substrate and the receiving substrate is raised to a sufficiently high temperature to allow the development of micro-cracks.
• the plate is installed in an annealing furnace whose temperature is controlled.
• the annealing causes an increase in the pressure in the cavities, until the fracture of the donor substrate along the embrittlement zone.
• the fracture Once the fracture has been initiated in a region of the zone of weakness, it propagates almost instantaneously along said zone.
• quasi-instantaneous means that the duration of the fracture is of the order of 100 ps for a substrate of 300 mm in diameter.
• the two parts of the plate remain in contact with each other on either side of the fracture plane.
• the plate is discharged from the annealing furnace for separation of the two parts of the plate.
• the separation is for example performed by inserting a blade between the two parts.
• this process is carried out batchwise, each batch comprising a plurality of plates which are placed together in the annealing furnace. Fracture detection is an important parameter in the layer transfer process.
• the document FR 2 902 926 proposes to equip the support which holds the plate in the annealing furnace of a piezoelectric sensor.
• the vibration generated within the plate is transmitted to the piezoelectric sensor and converted into an electrical signal which is recorded by a controller of the annealing furnace.
• a treatment of this signal makes it possible to detect characteristic peaks of a fracture.
• the plate and the sensor it is essential to have a mechanical connection between the plate and the sensor so that it can detect the fracture.
• the nacelles containing the substrates are deposited directly in contact with the furnace wall which is capable of transmitting the vibrations generated by fractures but also by shocks related to its environment. These configurations are therefore unfavorable for the detection of the fracture because they do not contain a suitable support for the piezoelectric sensors.
• the sensor can generally not be placed directly in the oven itself in contact with the nacelles or substrates due to limitations as to the temperature it can withstand the contaminations that it is likely to generate on substrates.
• the signal provided by the piezoelectric sensor does not easily determine the characteristics of the fracture, for example its energy or its duration.
• An object of the invention is to overcome the problems mentioned and to design a method for accurately detecting the fracture moment of a substrate, and this, for each substrate of a batch present in the annealing furnace.
• This method must also make it possible to detect that a substrate of the batch has not fractured, or that a substrate has broken during the fracture.
• the invention proposes a method for monitoring a heat treatment applied to a substrate comprising an embrittlement zone formed by implantation of atomic species in order to fracture said substrate along said weakening zone, the substrate being arranged in a heating chamber, characterized in that it comprises a recording of the sound inside or in the vicinity of the heating chamber and the detection, in said recording, of a sound emitted by the substrate during its fracture along the weakened zone.
• vicinity of the heating chamber means an area sufficiently close to the chamber so that the sound emitted during the fracture can be detected.
• the size and location of this area may depend on the environment of the oven, but the skilled person is able, by means of a few prior sound recordings, to verify that the intended location of the recording is either sufficiently good quality so that the sound of the fracture can be detected there.
• the advantage of this sound recording is that the sound emitted by the substrate during its fracture is very specific and can not be confused with the sound produced during another event in the environment of the annealing furnace. Moreover, besides the simple determination of the moment at which the fracture occurs, the recorded sound lends itself to an analysis (for example spectrum of frequencies, duration, intensity, etc.) which makes it possible to determine characteristic quantities of the fracture, for example, the energy released, the fracture rate, the occurrence of a breakage, etc.
• said recording is performed by a microphone arranged inside the heating chamber.
• said recording is performed by a microphone arranged on an outer wall of an annealing furnace containing said heating chamber.
• said recording is carried out by a microphone arranged between a heat shield and a door of an annealing furnace giving access to the heating chamber.
• said recording is performed by a microphone arranged in a tube opening inside the heating chamber.
• said method further comprises, from the recording of sound inside or in the vicinity of the heating chamber, the detection of a breakage of the substrate.
• a batch of substrates to be fractured is loaded into the heating chamber, said method comprising detecting, in the sound recording, the sound emitted by each substrate during its fracture.
• the method comprises recording the sound inside or in the vicinity of the heating chamber by means of two microphones distant from each other, and from a time lag between the sounds of the fracture of a substrate detected in the recording of each of said microphones, the location within the batch of the substrate for which the fracture has occurred.
• said microphones are arranged in opposite regions of the heating chamber.
• the heat treatment is stopped as soon as the fracture of each substrate of the batch has been detected.
• the batch is unloaded for manual separation of the fractured substrates.
• a vibration frequency of the substrate is determined during the fracture and a fracture rate of the substrate is deduced from said vibration frequency.
• the substrate comprises at least one semiconductor material.
• Another object of the invention relates to a device for the heat treatment of a batch of substrates to be fractured.
• the device comprises an annealing furnace comprising a heating chamber for simultaneously receiving all of said batch, at least one microphone configured to record sounds in or near the heating chamber, and a configured processing system. to detect, from a sound recording produced by said microphone, a sound emitted by a fracture of a substrate.
• the microphone is arranged in a tube opening inside the heating chamber.
• the device comprises at least two microphones distant from each other.
• the processing system is configured to, from a time offset between the sounds of the fracture of a substrate detected in the recording of each of said microphones, locate within the batch the substrate for which fracture occurred.
• the device further comprises an oven control system configured to stop the heat treatment as soon as the fracture of all the substrates of the batch has been detected.
• FIG. 1 is a representation of the acoustic signature of the fracture of a silicon substrate
• FIG. 2 is a diagram of the establishment of a microphone according to a first embodiment inside the annealing furnace
• FIG. 3 is a diagram of the establishment of a microphone according to a second embodiment, on the outer wall of the annealing furnace;
• FIG. 4 is a diagram of the establishment of a microphone according to a third embodiment, between the door and the heat shield of the annealing furnace;
• FIG. 5 is a diagram of the establishment of a microphone according to a fourth embodiment, in a tube in fluid connection with the interior of the annealing furnace;
• FIG. 6 is a diagram of the placement of two microphones according to a fifth embodiment, at two opposite locations in the annealing furnace;
• FIG. 7 shows a calibration curve between the frequency of the vibrations emitted during the fracture (in Hz) and the fracture speed (in m / s).
• the present invention is based on the fact that the fracture of a substrate, in particular a semiconductor substrate, along an embrittlement zone previously formed by implantation of atomic species has a specific acoustic signature, which can therefore be detected at within a sound recording in or near the heat treatment furnace in which said substrate is located.
• the substrate may be alone or assembled to another substrate. This last case applies especially when it is desired to transfer a layer of said substrate to the other substrate by the Smart Cut TM process.
• FIG. 1 illustrates the acoustic signature of the fracture of a silicon substrate, that is to say the sound intensity as a function of time detected in the oven following the fracture of the substrate.
• the unit of the time axis is the second.
• This signature is in the form of a sudden increase in the loudness then a fast decay, of exponential type, over a duration of 1 to 2 s.
• Such a signature is specific to a fracture, and can not be confused with the signature of other events likely to occur in or near the annealing furnace.
• This signature can be obtained with any microphone sensitive to frequencies of a few tens of kHz, possibly adapted to operate at high temperature depending on the intended location.
• the detection of the fracture provides at least one qualitative information on the fracture method (fracture or not of a substrate), even quantitative as will be explained in detail below.
• the sound caused by the fracture has a much longer duration, of the order of 1 to 2 s.
• This phenomenon seems to be explained by an induced oscillation of the substrate on either side of the fracture plane, under the effect of a difference between the pressure generated within the micro-cracks and the gas pressure surrounding the substrate.
• the sound spectrum is relatively complex (composed of several frequencies), it has a characteristic signature of the fracture that can be detected by means of signal processing.
• FIGS 2 to 6 illustrate various embodiments of the invention.
• the oven 1 has a generally tubular shape extending along a horizontal axis.
• the inner wall 10 of the furnace defines a heating chamber 11 in which the substrates S to be fractured are arranged.
• heat treatment is not performed for a single substrate but for a batch of substrates.
• the substrates are stored in a vertical position in one or more nacelles 2 which are placed side by side in the oven.
• the introduction of the nacelles is done by a door 12 located at one end of the tube.
• the door 12 is thermally insulated from the heating chamber 11 by a heat shield 13.
• the end of the tube opposite the door is generally blind.
• Heating elements 14 are arranged around the wall of the furnace to raise the heating chamber to the desired temperature for the fracture.
• the temperature applied to fracture silicon substrates is generally in the range of 100 to 500 ° C, preferably 300 to 500 ° C.
• the star surrounded by circles symbolizes the occurrence of a fracture in a substrate and the propagation of sound that results.
• the microphone transmits the recorded data in real time to a control station comprising a computer (indicated in FIG. 6 by reference numeral 4) making it possible to process the recordings by implementing a processing software the appropriate signal.
• the data transmission can be carried out wired or wireless, by any appropriate protocol.
• Said control station is advantageously configured to, depending on the results of the data processing, trigger a stop of the oven, or issue an alert to the attention of an operator responsible for monitoring the oven.
• FIG. 2 illustrates a first embodiment, in which a microphone 3 is arranged directly in the heating chamber 11.
• a microphone adapted to high temperatures that is to say temperatures tolerant, is chosen. at 300 ° C, or 850 ° C, which are commercially available.
• the microphone is closer to the substrates and is less sensitive to noises caused outside the oven.
• the microphone is placed on the wall opposite the door
• FIG. 3 illustrates a second embodiment, in which a microphone 3 is arranged on an outer wall of the oven, for example opposite the door 12.
• the sound detection is less efficient but sufficient for the detection of the fracture.
• a substrate Furthermore, this alternative embodiment eliminates a microphone adapted to high temperatures.
• FIG. 4 illustrates a third embodiment, in which the microphone 3 is arranged between the door 12 and the heat shield 13 of the oven. Compared to the first embodiment, the microphone is subjected to lower temperatures, but it must of course be chosen adapted to these temperatures.
• FIG. 5 illustrates a fourth embodiment, comprising a particular mounting of the microphone 3.
• This mounting comprises a tube 30 of small diameter, substantially corresponding to the size of the microphone 3, for example of the order of 1 to 5 mm.
• the length of the tube is typically of the order of 1 to 10 cm.
• Said tube 30 opens into the heating chamber 11 through a hole drilled in the wall of the oven, for example the wall opposite to the door 12.
• FIG. 6 illustrates a fifth embodiment, in which two microphones 3 are arranged in the oven, each close to one end of the tube. Each microphone records the sounds that occur within the heating chamber 11.
• the temporal offset of the acoustic signatures of the same event makes it possible to estimate the location, within the batch, of the substrate in which the fracture occurred. It is thus possible to determine the substrate that has fractured.
• Exploitation of the fracture detection of a substrate can take different forms.
• the counting of all detected fractures and the comparison with the number of substrates present in the furnace makes it possible to check whether each substrate has fractured well.
• the number of detected fractures is smaller than the number of substrates, it is possible to deduce that one or more substrates have not fractured. In such a case, it is preferable not to send this batch on an automated separation machine, because the presence of a non-fractured substrate may cause an inadvertent shutdown of the machine. The batch concerned is thus unloaded for manual separation of the fractured substrates.
• a substrate does not necessarily translate into a specific signature. Indeed, the sound produced during a break can be linked to the falling of pieces of the substrate or to the breaking of the substrate and can therefore have variable characteristics. However, since the sound produced by the fracture of a substrate is well identified, any other sound occurring in the chamber may be related to a breakage. In this case, it is advantageous to take the batch out of the oven in order to process it manually, so that a broken substrate does not disturb the operation of the automatic separation machine.
• the interior of the oven is cleaned before the introduction of a new batch of substrates to be fractured.
• the inventors have demonstrated a correlation between the maximum sound frequency corresponding to the intensity peak and the speed of the fracture wave propagating in the substrate.
• This correlation is shown schematically in FIG. 7, which represents the relationship between the frequency of the vibrations emitted (in Hz) and the speed of the fracture wave (in m / s). Thanks to such a curve, which is built beforehand for a given type of substrate and determined implantation conditions, it is possible to determine, from the sound recording of each substrate, the speed of the corresponding fracture. It is then possible to check the homogeneity of the fracture characteristics within the batch.
• the energy released during the fracture is directly proportional to the maximum detected sound intensity. Consequently, the relative variation of the maximum loudness and its comparison with the average value detected on identical substrates makes it possible to estimate the energy released from the fracture of the substrate, which is an indicator of the quality of the fracture. .

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• 2018
  • 2018-03-28 FR FR1852683A patent/FR3079658B1/fr active Active
• 2019
  • 2019-03-22 US US17/042,755 patent/US12002697B2/en active Active
  • 2019-03-22 EP EP19718441.9A patent/EP3776639A1/de active Pending
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