SG11202009544XA - Method for detecting the splitting of a substrate weakened by implanting atomic species - Google Patents

Method for detecting the splitting of a substrate weakened by implanting atomic species

Info

Publication number
SG11202009544XA
SG11202009544XA SG11202009544XA SG11202009544XA SG11202009544XA SG 11202009544X A SG11202009544X A SG 11202009544XA SG 11202009544X A SG11202009544X A SG 11202009544XA SG 11202009544X A SG11202009544X A SG 11202009544XA SG 11202009544X A SG11202009544X A SG 11202009544XA
Authority
SG
Singapore
Prior art keywords
splitting
detecting
atomic species
implanting atomic
weakened
Prior art date
Application number
SG11202009544XA
Other languages
English (en)
Inventor
François Rieutord
Frédéric Mazen
Didier Landru
Oleg Kononchuck
Mohamed Nadia Ben
Original Assignee
Soitec Silicon On Insulator
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator, Commissariat Energie Atomique filed Critical Soitec Silicon On Insulator
Publication of SG11202009544XA publication Critical patent/SG11202009544XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/14—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
    • G01N29/46—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by spectral analysis, e.g. Fourier analysis or wavelet analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/26—Scanned objects
    • G01N2291/269—Various geometry objects
    • G01N2291/2697—Wafer or (micro)electronic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Signal Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Acoustics & Sound (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
SG11202009544XA 2018-03-28 2019-03-22 Method for detecting the splitting of a substrate weakened by implanting atomic species SG11202009544XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1852683A FR3079658B1 (fr) 2018-03-28 2018-03-28 Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques
PCT/FR2019/050659 WO2019186037A1 (fr) 2018-03-28 2019-03-22 Procédé de détection de la fracture d'un substrat fragilise par implantation d'espèces atomiques

Publications (1)

Publication Number Publication Date
SG11202009544XA true SG11202009544XA (en) 2020-10-29

Family

ID=62751062

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009544XA SG11202009544XA (en) 2018-03-28 2019-03-22 Method for detecting the splitting of a substrate weakened by implanting atomic species

Country Status (7)

Country Link
US (1) US12002697B2 (de)
EP (1) EP3776639A1 (de)
JP (1) JP7426551B2 (de)
KR (1) KR102526747B1 (de)
FR (1) FR3079658B1 (de)
SG (1) SG11202009544XA (de)
WO (1) WO2019186037A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3143758A1 (fr) * 2022-12-15 2024-06-21 Saint-Gobain Glass France Unité et Module de détection de casse d’un substrat dans une enceinte

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369133A (ja) 1989-08-08 1991-03-25 Nec Corp 半導体装置の試験方法
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3012513B2 (ja) 1996-03-04 2000-02-21 山口日本電気株式会社 半導体装置の試験方法及び試験装置
JP4379943B2 (ja) 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
JP3541359B2 (ja) * 2001-09-19 2004-07-07 独立行政法人 科学技術振興機構 超音波プローブの一部を内蔵した基板載置台及び超音波プローブ貫通孔の密閉装置
US7461535B2 (en) * 2006-03-01 2008-12-09 Memsic, Inc. Multi-temperature programming for accelerometer
FR2902926B1 (fr) 2006-06-22 2008-10-24 Commissariat Energie Atomique Procede et dispositif de suivi d'un traitement thermique d'un substrat microtechnologique.
US9933394B2 (en) * 2007-03-10 2018-04-03 Sergei Ostapenko Method and apparatus for detecting cracks and delamination in composite materials
JP2009023697A (ja) 2007-07-20 2009-02-05 Toyo Jidoki Co Ltd ロータリー型袋詰め包装機
JP2009231697A (ja) * 2008-03-25 2009-10-08 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2009283582A (ja) 2008-05-21 2009-12-03 Shin Etsu Handotai Co Ltd 貼り合わせウェーハの製造方法及び貼り合わせウェーハ
US7973547B2 (en) * 2008-08-13 2011-07-05 Infineon Technologies Ag Method and apparatus for detecting a crack in a semiconductor wafer, and a wafer chuck
JP2011007750A (ja) 2009-06-29 2011-01-13 Kyocera Corp ウエハのクラックの検出方法及びその検出装置
US20110016975A1 (en) * 2009-07-24 2011-01-27 Gregory Scott Glaesemann Method and Apparatus For Measuring In-Situ Characteristics Of Material Exfoliation
FR2973157B1 (fr) * 2011-03-25 2014-03-14 Soitec Silicon On Insulator Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe
FR2974944B1 (fr) * 2011-05-02 2013-06-14 Commissariat Energie Atomique Procédé de formation d'une fracture dans un matériau
FR3020175B1 (fr) * 2014-04-16 2016-05-13 Soitec Silicon On Insulator Procede de transfert d'une couche utile
KR101939590B1 (ko) 2015-12-30 2019-01-17 맷슨 테크놀로지, 인크. 열처리 시스템 내의 기판 파손 검출

Also Published As

Publication number Publication date
JP2021519512A (ja) 2021-08-10
FR3079658A1 (fr) 2019-10-04
JP7426551B2 (ja) 2024-02-02
KR20200136981A (ko) 2020-12-08
TW201942999A (zh) 2019-11-01
US20210028036A1 (en) 2021-01-28
WO2019186037A1 (fr) 2019-10-03
KR102526747B1 (ko) 2023-04-27
FR3079658B1 (fr) 2021-12-17
US12002697B2 (en) 2024-06-04
EP3776639A1 (de) 2021-02-17

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