EP3619738A4 - HIGH POWER MMIC DEVICES WITH DERIVED GRID TRANSISTORS - Google Patents

HIGH POWER MMIC DEVICES WITH DERIVED GRID TRANSISTORS Download PDF

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Publication number
EP3619738A4
EP3619738A4 EP18795054.8A EP18795054A EP3619738A4 EP 3619738 A4 EP3619738 A4 EP 3619738A4 EP 18795054 A EP18795054 A EP 18795054A EP 3619738 A4 EP3619738 A4 EP 3619738A4
Authority
EP
European Patent Office
Prior art keywords
high power
gate transistors
mmic devices
power mmic
bypassed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18795054.8A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3619738A1 (en
Inventor
Simon M. Wood
James Milligan
Mitchell Flowers
Donald Farrell
Khaled Fayed
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/587,830 external-priority patent/US10128365B2/en
Priority claimed from US15/608,048 external-priority patent/US9947616B2/en
Application filed by Cree Inc filed Critical Cree Inc
Publication of EP3619738A1 publication Critical patent/EP3619738A1/en
Publication of EP3619738A4 publication Critical patent/EP3619738A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Amplifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Microwave Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
EP18795054.8A 2017-05-05 2018-05-03 HIGH POWER MMIC DEVICES WITH DERIVED GRID TRANSISTORS Pending EP3619738A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/587,830 US10128365B2 (en) 2016-03-17 2017-05-05 Bypassed gate transistors having improved stability
US15/608,048 US9947616B2 (en) 2016-03-17 2017-05-30 High power MMIC devices having bypassed gate transistors
PCT/US2018/030863 WO2018204622A1 (en) 2017-05-05 2018-05-03 High power mmic devices having bypassed gate transistors

Publications (2)

Publication Number Publication Date
EP3619738A1 EP3619738A1 (en) 2020-03-11
EP3619738A4 true EP3619738A4 (en) 2021-01-13

Family

ID=64016692

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18795054.8A Pending EP3619738A4 (en) 2017-05-05 2018-05-03 HIGH POWER MMIC DEVICES WITH DERIVED GRID TRANSISTORS

Country Status (4)

Country Link
EP (1) EP3619738A4 (zh)
JP (3) JP6929968B2 (zh)
CN (2) CN110582846B (zh)
WO (1) WO2018204622A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111370474B (zh) * 2020-04-23 2023-10-24 上海华虹宏力半导体制造有限公司 沟槽栅器件的栅极串联电阻
CN113851485B (zh) * 2020-06-28 2023-06-02 京东方科技集团股份有限公司 一种薄膜晶体管、栅极行驱动电路及阵列基板
EP4393009A1 (en) * 2021-10-01 2024-07-03 MACOM Technology Solutions Holdings, Inc. Bypassed gate transistors having improved stability
JPWO2023136121A1 (zh) * 2022-01-13 2023-07-20

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01166564A (ja) * 1987-12-22 1989-06-30 Nec Corp 大電力用電界効果トランジスタ
US20130313653A1 (en) * 2012-05-25 2013-11-28 Infineon Technologies Austria Ag MOS Transistor with Multi-finger Gate Electrode
WO2016042861A1 (ja) * 2014-09-17 2016-03-24 シャープ株式会社 化合物半導体電界効果トランジスタ

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2884577B2 (ja) * 1988-10-19 1999-04-19 日本電気株式会社 電界効果トランジスタ
ATE166183T1 (de) * 1991-09-30 1998-05-15 Luminis Pty Ltd Gallium-arsenid-mesfet-bildaufnehmer
US5592006A (en) * 1994-05-13 1997-01-07 International Rectifier Corporation Gate resistor for IGBT
JPH1145891A (ja) * 1997-07-25 1999-02-16 Toshiba Corp 高周波用集積回路素子
US6023086A (en) * 1997-09-02 2000-02-08 Motorola, Inc. Semiconductor transistor with stabilizing gate electrode
JP3515886B2 (ja) * 1997-09-29 2004-04-05 三菱電機株式会社 半導体装置およびその製造方法
JP3269475B2 (ja) * 1998-02-16 2002-03-25 日本電気株式会社 半導体装置
JP3373435B2 (ja) * 1998-06-25 2003-02-04 日本電信電話株式会社 抵抗帰還トランジスタ
JP2001094094A (ja) 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
JP3542116B2 (ja) * 2000-09-29 2004-07-14 ユーディナデバイス株式会社 高周波回路
JP3712111B2 (ja) * 2001-03-30 2005-11-02 ユーディナデバイス株式会社 電力増幅用半導体装置
JP4361313B2 (ja) * 2003-05-08 2009-11-11 三菱電機株式会社 高周波電力増幅器
US7492235B2 (en) * 2006-10-25 2009-02-17 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Transmission line transistor attenuator
JP5106041B2 (ja) * 2007-10-26 2012-12-26 株式会社東芝 半導体装置
JP5238633B2 (ja) * 2009-07-27 2013-07-17 株式会社東芝 半導体装置
US8212321B2 (en) * 2009-10-30 2012-07-03 Freescale Semiconductor, Inc. Semiconductor device with feedback control
JP2012182438A (ja) * 2011-02-08 2012-09-20 Toshiba Corp 半導体装置
US9859411B2 (en) * 2014-05-21 2018-01-02 Sharp Kabushiki Kaisha Field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01166564A (ja) * 1987-12-22 1989-06-30 Nec Corp 大電力用電界効果トランジスタ
US20130313653A1 (en) * 2012-05-25 2013-11-28 Infineon Technologies Austria Ag MOS Transistor with Multi-finger Gate Electrode
WO2016042861A1 (ja) * 2014-09-17 2016-03-24 シャープ株式会社 化合物半導体電界効果トランジスタ

Also Published As

Publication number Publication date
WO2018204622A1 (en) 2018-11-08
JP2020519025A (ja) 2020-06-25
JP2023081974A (ja) 2023-06-13
JP7538275B2 (ja) 2024-08-21
CN110582846B (zh) 2023-05-12
EP3619738A1 (en) 2020-03-11
CN116403982A (zh) 2023-07-07
CN110582846A (zh) 2019-12-17
JP2022002308A (ja) 2022-01-06
JP6929968B2 (ja) 2021-09-01
JP7242777B2 (ja) 2023-03-20

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