ATE166183T1 - Gallium-arsenid-mesfet-bildaufnehmer - Google Patents
Gallium-arsenid-mesfet-bildaufnehmerInfo
- Publication number
- ATE166183T1 ATE166183T1 AT92920928T AT92920928T ATE166183T1 AT E166183 T1 ATE166183 T1 AT E166183T1 AT 92920928 T AT92920928 T AT 92920928T AT 92920928 T AT92920928 T AT 92920928T AT E166183 T1 ATE166183 T1 AT E166183T1
- Authority
- AT
- Austria
- Prior art keywords
- pct
- source
- field effect
- effect transistor
- gallium arsenide
- Prior art date
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPK866091 | 1991-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE166183T1 true ATE166183T1 (de) | 1998-05-15 |
Family
ID=3775726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT92920928T ATE166183T1 (de) | 1991-09-30 | 1992-09-25 | Gallium-arsenid-mesfet-bildaufnehmer |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5500522A (de) |
| EP (1) | EP0606350B1 (de) |
| JP (1) | JPH06511111A (de) |
| AT (1) | ATE166183T1 (de) |
| DE (1) | DE69225488T2 (de) |
| WO (1) | WO1993007643A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020097446A1 (en) * | 2001-01-25 | 2002-07-25 | Umax Data Systems Inc. | Apparatus and method for dark calibration of a linear CMOS sensor |
| EP1492126A1 (de) * | 2003-06-27 | 2004-12-29 | Dialog Semiconductor GmbH | DRAM-Zelle mit natürlichem Transistor für analoge oder vielfache Pegel |
| US10128365B2 (en) | 2016-03-17 | 2018-11-13 | Cree, Inc. | Bypassed gate transistors having improved stability |
| CN116403982A (zh) * | 2017-05-05 | 2023-07-07 | 沃孚半导体公司 | 具有旁路栅极晶体管的高功率mmic器件 |
| US10763334B2 (en) | 2018-07-11 | 2020-09-01 | Cree, Inc. | Drain and/or gate interconnect and finger structure |
| US10483352B1 (en) * | 2018-07-11 | 2019-11-19 | Cree, Inc. | High power transistor with interior-fed gate fingers |
| US10600746B2 (en) | 2018-07-19 | 2020-03-24 | Cree, Inc. | Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors |
| US10770415B2 (en) | 2018-12-04 | 2020-09-08 | Cree, Inc. | Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation |
| US11417746B2 (en) | 2019-04-24 | 2022-08-16 | Wolfspeed, Inc. | High power transistor with interior-fed fingers |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5984467A (ja) * | 1982-11-06 | 1984-05-16 | Mitsubishi Electric Corp | モノリシツク赤外線電荷転送素子 |
| US4618024A (en) * | 1983-02-28 | 1986-10-21 | Amoco Corporation | Moving seismic source system for use in water-covered areas |
| JPS6037768A (ja) * | 1983-08-10 | 1985-02-27 | Mitsubishi Electric Corp | 電荷転送素子 |
| US4772931A (en) * | 1986-07-08 | 1988-09-20 | Ibm Corporation | Interdigitated Schottky barrier photodetector |
| JPH0715979B2 (ja) * | 1987-08-27 | 1995-02-22 | 三菱電機株式会社 | 超格子撮像素子 |
| JPH081949B2 (ja) * | 1989-05-30 | 1996-01-10 | 三菱電機株式会社 | 赤外線撮像装置及びその製造方法 |
| US5047821A (en) * | 1990-03-15 | 1991-09-10 | Intevac, Inc. | Transferred electron III-V semiconductor photocathode |
| US5182624A (en) * | 1990-08-08 | 1993-01-26 | Minnesota Mining And Manufacturing Company | Solid state electromagnetic radiation detector fet array |
-
1992
- 1992-09-25 US US08/211,373 patent/US5500522A/en not_active Expired - Fee Related
- 1992-09-25 DE DE69225488T patent/DE69225488T2/de not_active Expired - Fee Related
- 1992-09-25 WO PCT/AU1992/000524 patent/WO1993007643A1/en active IP Right Grant
- 1992-09-25 JP JP5506466A patent/JPH06511111A/ja active Pending
- 1992-09-25 AT AT92920928T patent/ATE166183T1/de active
- 1992-09-25 EP EP92920928A patent/EP0606350B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0606350A4 (de) | 1994-11-17 |
| EP0606350A1 (de) | 1994-07-20 |
| DE69225488D1 (de) | 1998-06-18 |
| JPH06511111A (ja) | 1994-12-08 |
| US5500522A (en) | 1996-03-19 |
| WO1993007643A1 (en) | 1993-04-15 |
| EP0606350B1 (de) | 1998-05-13 |
| DE69225488T2 (de) | 1999-02-04 |
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