KR920019169A - 고체촬상장치 - Google Patents

고체촬상장치 Download PDF

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Publication number
KR920019169A
KR920019169A KR1019920003446A KR920003446A KR920019169A KR 920019169 A KR920019169 A KR 920019169A KR 1019920003446 A KR1019920003446 A KR 1019920003446A KR 920003446 A KR920003446 A KR 920003446A KR 920019169 A KR920019169 A KR 920019169A
Authority
KR
South Korea
Prior art keywords
imaging device
state imaging
solid state
fet
signal line
Prior art date
Application number
KR1019920003446A
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English (en)
Inventor
마사하루 하마사끼
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=13399752&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR920019169(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920019169A publication Critical patent/KR920019169A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14843—Interline transfer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음

Description

고체촬상장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 고체촬상장치의 일실시예의 요부를 도시한 회로도,
제2도는 MOS트랜지스터의 정전류특성도.

Claims (1)

  1. 2차원 배열된 복수화소의 각 화소마다 광전변환된 신호전하를 증폭하여 수직신호선에 출력하는 증폭용 트랜지스터를 가지고, 각 수직 신호선에는 부하용 트랜지스터가 접속된 구성의 고체촬상장치에 있어서, 상기 부하용 트랜지스터는 서로 직렬접속된 정전류(定電流)특성을 가진 제1의 FET와, 마이너스귀환에 의한 저항 작용을 하는 제2의 FET로 이루어지는 것을 특징으로 하는 고체촬상장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920003446A 1991-03-08 1992-03-03 고체촬상장치 KR920019169A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3069341A JP2913876B2 (ja) 1991-03-08 1991-03-08 固体撮像装置
JP91-69341 1991-03-08

Publications (1)

Publication Number Publication Date
KR920019169A true KR920019169A (ko) 1992-10-22

Family

ID=13399752

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920003446A KR920019169A (ko) 1991-03-08 1992-03-03 고체촬상장치

Country Status (3)

Country Link
US (1) US5335008A (ko)
JP (1) JP2913876B2 (ko)
KR (1) KR920019169A (ko)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5488415A (en) * 1993-07-09 1996-01-30 Olympus Optical Co., Ltd. Solid-state image pickup device having a photoelectric conversion detection cell with high sensitivity
JPH07255013A (ja) 1994-01-31 1995-10-03 Sony Corp 固体撮像装置
JP3385760B2 (ja) * 1994-02-21 2003-03-10 ソニー株式会社 固体撮像装置及びその駆動方法
US5933188A (en) * 1994-10-19 1999-08-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus and method with reset
EP0725535B1 (en) * 1995-02-01 2003-04-23 Canon Kabushiki Kaisha Solid-state image pickup device and method of operating the same
JP3284816B2 (ja) * 1995-03-22 2002-05-20 ソニー株式会社 固体撮像装置
US6873362B1 (en) * 1995-03-22 2005-03-29 Sony Corporation Scanning switch transistor for solid-state imaging device
EP0739039A3 (en) * 1995-04-18 1998-03-04 Interuniversitair Micro-Elektronica Centrum Vzw Pixel structure, image sensor using such pixel, structure and corresponding peripheric circuitry
JPH0946597A (ja) * 1995-07-31 1997-02-14 Sony Corp 固体撮像装置およびその駆動方法
JP3838665B2 (ja) * 1995-08-11 2006-10-25 株式会社 東芝 Ｍｏｓ型固体撮像装置
JP4035194B2 (ja) 1996-03-13 2008-01-16 キヤノン株式会社 Ｘ線検出装置及びｘ線検出システム
US5844265A (en) * 1996-07-11 1998-12-01 Synaptics, Incorporated Sense amplifier for high-density imaging array
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
US20010045508A1 (en) * 1998-09-21 2001-11-29 Bart Dierickx Pixel structure for imaging devices
US7199410B2 (en) * 1999-12-14 2007-04-03 Cypress Semiconductor Corporation (Belgium) Bvba Pixel structure with improved charge transfer
EP0883187A1 (en) 1997-06-04 1998-12-09 Interuniversitair Micro-Elektronica Centrum Vzw A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector
US6011251A (en) * 1997-06-04 2000-01-04 Imec Method for obtaining a high dynamic range read-out signal of a CMOS-based pixel structure and such CMOS-based pixel structure
US6815791B1 (en) * 1997-02-10 2004-11-09 Fillfactory Buried, fully depletable, high fill factor photodiodes
JPH10257392A (ja) * 1997-03-14 1998-09-25 Matsushita Electron Corp 物理量分布検知半導体装置およびその駆動方法ならびにその製造方法
WO1999016238A1 (en) * 1997-09-22 1999-04-01 Interuniversitair Micro-Elektronica Centrum Devices and methods for improving the image quality in an image sensor
TW421962B (en) * 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
US7106373B1 (en) 1998-02-09 2006-09-12 Cypress Semiconductor Corporation (Belgium) Bvba Method for increasing dynamic range of a pixel by multiple incomplete reset
US8063963B2 (en) * 1998-02-09 2011-11-22 On Semiconductor Image Sensor Imaging device having a pixel structure with high dynamic range read-out signal
US6734907B1 (en) 1998-04-30 2004-05-11 Minolta Co., Ltd. Solid-state image pickup device with integration and amplification
US6836291B1 (en) * 1998-04-30 2004-12-28 Minolta Co., Ltd. Image pickup device with integral amplification
JP4200545B2 (ja) 1998-06-08 2008-12-24 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
JP2000078473A (ja) * 1998-08-31 2000-03-14 Canon Inc 光電変換装置
US6734906B1 (en) 1998-09-02 2004-05-11 Canon Kabushiki Kaisha Image pickup apparatus with photoelectric conversion portions arranged two dimensionally
JP3512152B2 (ja) * 1998-10-14 2004-03-29 松下電器産業株式会社 増幅型固体撮像装置およびその駆動方法
US6542190B1 (en) * 1999-01-12 2003-04-01 Silicon Tough Technology Inc. Image sensor with function of electronic shutter
US6704050B1 (en) * 1999-04-23 2004-03-09 Polaroid Corporation Active-pixel image sensing device with linear mode voltage to current conversion
US6781627B1 (en) * 1999-06-24 2004-08-24 Olympus Optical Co., Ltd. Solid state imaging device and electric charge detecting apparatus used for the same
US7012644B1 (en) * 2000-09-06 2006-03-14 Hewlett-Packard Development Company, L.P. Multiple output node charge coupled device
WO2002027763A2 (en) 2000-09-25 2002-04-04 Foveon, Inc. Active pixel sensor with noise cancellation
US7782377B2 (en) * 2003-02-26 2010-08-24 Canon Kabushiki Kaisha Image sensing apparatus, control method therefor, storage medium, and program to create correction data
JP4135594B2 (ja) * 2003-08-19 2008-08-20 ソニー株式会社 固体撮像装置
US7808022B1 (en) 2005-03-28 2010-10-05 Cypress Semiconductor Corporation Cross talk reduction
US7750958B1 (en) 2005-03-28 2010-07-06 Cypress Semiconductor Corporation Pixel structure
US8094223B1 (en) 2007-05-30 2012-01-10 On Semiconductor Trading Ltd. Bus driving in an image sensor
KR100863972B1 (ko) * 2007-09-13 2008-10-16 삼성에스디아이 주식회사 음극선관
US8476567B2 (en) 2008-09-22 2013-07-02 Semiconductor Components Industries, Llc Active pixel with precharging circuit
US7974805B2 (en) * 2008-10-14 2011-07-05 ON Semiconductor Trading, Ltd Image sensor and method
JP5482137B2 (ja) * 2009-11-19 2014-04-23 ソニー株式会社 固体撮像装置、負荷電流源回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4068148A (en) * 1975-10-14 1978-01-10 Hitachi, Ltd. Constant current driving circuit
JPS5578680A (en) * 1978-12-08 1980-06-13 Matsushita Electric Ind Co Ltd Solid state pickup device
JPS55105480A (en) * 1979-02-07 1980-08-13 Hitachi Ltd Solid state pickup device
JPS58169965A (ja) * 1982-03-31 1983-10-06 Hitachi Ltd 固体撮像装置
FR2571572B1 (fr) * 1984-10-09 1987-01-02 Thomson Csf Dispositif photosensible a transfert de ligne muni d'amplificateurs de contre-reaction
US4831451A (en) * 1987-04-02 1989-05-16 Texas Instruments Incorporated Horizontal scanner for image sensor arrays
US4959723A (en) * 1987-11-06 1990-09-25 Canon Kabushiki Kaisha Solid state image pickup apparatus having multi-phase scanning pulse to read out accumulated signal
US5086344A (en) * 1990-05-11 1992-02-04 Eastman Kodak Company Digital correlated double sampling circuit for sampling the output of an image sensor

Also Published As

Publication number Publication date
JPH04281683A (ja) 1992-10-07
JP2913876B2 (ja) 1999-06-28
US5335008A (en) 1994-08-02

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