KR920011052A - 증폭회로 - Google Patents

증폭회로 Download PDF

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Publication number
KR920011052A
KR920011052A KR1019910021496A KR910021496A KR920011052A KR 920011052 A KR920011052 A KR 920011052A KR 1019910021496 A KR1019910021496 A KR 1019910021496A KR 910021496 A KR910021496 A KR 910021496A KR 920011052 A KR920011052 A KR 920011052A
Authority
KR
South Korea
Prior art keywords
amplifying
mosfet
gate
drain
capacitor
Prior art date
Application number
KR1019910021496A
Other languages
English (en)
Other versions
KR960016214B1 (ko
Inventor
이와오 타케모또
타쯔히사 후지이
아쯔시 하세가와
Original Assignee
카나이 쯔또무
가부시기가이샤 히다찌세이사구쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 카나이 쯔또무, 가부시기가이샤 히다찌세이사구쇼 filed Critical 카나이 쯔또무
Publication of KR920011052A publication Critical patent/KR920011052A/ko
Application granted granted Critical
Publication of KR960016214B1 publication Critical patent/KR960016214B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/026—Shaping pulses by amplifying with a bidirectional operation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Logic Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Amplifiers (AREA)

Abstract

내용 없음

Description

증폭회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 증폭회로의 일실시예를 표시한 회로도, 제2도는 본 발명에 관한 증폭회로의 다른 일실시예를 표시한 회로도.

Claims (4)

  1. 신호전하를 받는 제1의 커패시터와, 제1의 커패시터의 전압을 받는 소오스 플루우어회로와, 이 소오스플로우어회로의 출력신호가 제2의 커패시터를 재재해서 게이트에 공급되는 소오스접지형태의 증폭 MOSFET와, 상기 제1의 커패시터의 신호전하를 리세트시키는 동안에 있어서, 상기 증폭 MOSFET의 게이트에 소정의 바이어스전압을 공급하는 스위치소자를 포함하고, 상기 증폭 MOSFET의 드레인으로부터 신호전하에 대응한 증폭출력신호를 얻는 것을 특징으로 하는 증폭회로.
  2. 제1항에 있어서, 상기 증폭 MOSFET의 게이트에 소정의 바이어스 전압을 주는 스위치소자는, 증폭 MOSFET의 게이트와 드레인을 단락시키는 것임을 특징으로 하는 증폭회로.
  3. 제1항 또는 제2항에 있어서, 상기 증폭 MOSFET의 드레인에는, 드레인에 게이트가 접속된 부하 MOSFET가 설치된 것임을 특징으로 하는 증폭회로.
  4. 제1항, 제2항 또는 제3항에 있어서, 상기 신호전하는, CCD를 통해서 입력되는 것임을 특징으로 하는 증폭회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910021496A 1990-11-28 1991-11-28 증폭회로 KR960016214B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2326348A JP3069373B2 (ja) 1990-11-28 1990-11-28 固体撮像装置の駆動方法
JP90-326348 1990-11-28

Publications (2)

Publication Number Publication Date
KR920011052A true KR920011052A (ko) 1992-06-27
KR960016214B1 KR960016214B1 (ko) 1996-12-06

Family

ID=18186787

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910021496A KR960016214B1 (ko) 1990-11-28 1991-11-28 증폭회로

Country Status (3)

Country Link
US (1) US5220587A (ko)
JP (1) JP3069373B2 (ko)
KR (1) KR960016214B1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235665A (ja) * 1991-09-04 1993-09-10 Hitachi Ltd 増幅回路
JP3182303B2 (ja) * 1994-11-28 2001-07-03 三洋電機株式会社 固体撮像素子及びこれを用いた撮像装置
FR2732848B1 (fr) * 1995-04-04 1997-05-16 Thomson Csf Semiconducteurs Amplificateur de lecture de registre ccd
JP3351503B2 (ja) * 1996-10-09 2002-11-25 シャープ株式会社 固体撮像装置
JP3621844B2 (ja) 1999-02-24 2005-02-16 シャープ株式会社 増幅型固体撮像装置
US6538245B1 (en) * 2000-10-26 2003-03-25 Rockwell Science Center, Llc. Amplified CMOS transducer for single photon read-out of photodetectors
JP4212767B2 (ja) * 2000-12-21 2009-01-21 旭化成エレクトロニクス株式会社 高速電流スイッチ回路および高周波電流源
JP4299697B2 (ja) * 2004-03-04 2009-07-22 シャープ株式会社 固体撮像装置
JP6062185B2 (ja) * 2012-08-27 2017-01-18 シャープ株式会社 固体撮像装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2430694A1 (fr) * 1978-07-04 1980-02-01 Thomson Csf Dispositif de lecture d'une quantite de charges electriques, et filtre a transfert de charges muni d'un tel dispositif
US4503550A (en) * 1982-07-01 1985-03-05 Rca Corporation Dynamic CCD input source pulse generating circuit

Also Published As

Publication number Publication date
US5220587A (en) 1993-06-15
JPH04196329A (ja) 1992-07-16
KR960016214B1 (ko) 1996-12-06
JP3069373B2 (ja) 2000-07-24

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