Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
  • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
  • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
  • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
  • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
  • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L29/41725—Source or drain electrodes for field effect devices
  • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
  • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
  • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L29/42312—Gate electrodes for field effect devices
  • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
  • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
  • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
  • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
  • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
  • H01L29/402—Field plates

Definitions

• inventive concepts described herein relate to microelectronic devices and, more particularly, to high power, high frequency transistors having unit cell-based structures.
• a high power transistor may include a plurality of gate fingers that extend in parallel between respective elongated source and drain contacts, as illustrated in FIG. 1.
• FIG. 1 illustrates a metal layout of a conventional transistor structure 10 that includes a gate pad 12, a source pad 22 and a drain pad 32 on a semiconductor structure 20.
• FIG. 1 is a plan view of the device (i.e., looking down at the device from above).
• the gate pad 12 is connected by a gate bus 14 to a plurality of gate fingers 16 that extend in parallel in a first direction (e.g., the y-direction indicated in FIG. 1).
• the source pad 22 is connected to a plurality of parallel source contacts 26 via a source bus 24, and the drain pad 32 is connected to a plurality of drain contacts 36 via a drain bus 34.
• Each gate finger 16 runs along the y- direction between a pair of adjacent source and drain contacts 26, 36.
• a unit cell of the transistor 10 is illustrated at box 40, and includes a gate finger 16 that extends between adjacent source and drain contacts 26, 36.
• the "gate length” refers to the distance of the gate metallization in the x-direction
• the “gate width” is the distance by which the source and drain contacts 26, 36 overlap in the y-direction. That is, "width" of a gate finger 16 refers to the dimension of the gate finger 16 that extends in parallel to the adjacent source/drain contacts 26, 36 (the distance along the y-direction).
• the gate periphery of the device refers to the sum of the gate widths for each gate finger 16 of the device 10.
• the gate periphery of a multi-cell transistor device may be increased by making the gate fingers wider (i.e., longer in the y-direction). As the gate fingers of a device become wider, however, the high frequency performance of the device may be adversely impacted. In addition, making the gate fingers wider typically means that the gate fingers must handle increased current densities, which can cause electromigration of the gate finger metallization.
• a transistor device includes a source contact extending in a first direction, a gate finger extending in the first direction adjacent the source contact, and a drain contact adjacent the gate finger.
• the gate finger is between the drain contact and the source contact.
• a gate pad is electrically connected to the gate finger at a plurality of points along the gate finger.
• the device further includes a gate jumper that extends in the first direction and that is conductively connected to the gate pad.
• the gate pad is conductively connected through the gate jumper to at least one of the plurality of points along the gate finger.
• the device may further include a gate bus connected to the gate jumper and the gate finger, and a gate signal distribution bar that is spaced apart from the gate bus in the first direction and that connects the gate jumper to the gate finger.
• a transistor device includes a gate pad, a gate finger in conductive contact with the gate pad at a first location on the gate fmger and extending in a first direction, and a gate jumper in conductive contact with the gate pad and extending in the first direction.
• the gate jumper is conductively connected to the gate fmger at a second location on the gate finger that is spaced apart from the first location so that a gate signal received at the gate pad is applied to the gate fmger at the first location and at the second location.
• a transistor device includes a gate bus, a gate finger in contact with the gate bus and extending in a first direction, and a gate jumper in contact with the gate bus and extending in the first direction, wherein the gate jumper is in conductive contact with the gate finger at a location along the gate finger that is spaced apart from the gate bus in the first direction.
• a transistor device includes a substrate, a gate bus on the substrate, and first and second source contact segments on the substrate and extending in a first direction.
• the first and second source contact segments are separated from one another in the first direction by a gap.
• the device further includes a gate finger on the substrate and connected to the gate bus. The gate finger extends in the first direction adjacent the source contact segments.
• the device further includes a drain contact on the substrate adjacent the gate fmger, wherein the gate fmger is between the drain contact and the source contact segments, a gate jumper connected to the gate bus, wherein the gate jumper is provided over the source contact segments and extends in the first direction, and a gate signal distribution bar on the substrate and extending from the gap between the first and second source contact segments to the gate finger.
• the gate signal distribution bar contacts the gate finger at a gate signal distribution point that is spaced apart from the gate bus in the first direction, and the gate signal distribution bar is conductively connected to the gate jumper.
• a transistor includes a drain contact extending along a first axis, a source contact extending along a second axis that is parallel to the first axis, a gate finger extending between the source contact and the drain contact, and a plurality of spaced-apart gate resistors that are electrically connected to the gate finger. At least a first of the gate resistors is disposed in a portion of a region between the first axis and the second axis that is between a first end and a second end of the gate fmger when the transistor is viewed from above.
• the gate finger may include a plurality of
• the transistor may further include a gate jumper that is electrically connected between a gate bus and a first of the gate finger segments.
• the first of the gate resistors may be interposed along an electrical path between the gate jumper and a first of the gate finger segments.
• the transistor may also include a first gate signal distribution bar that is interposed along an electrical path between the gate jumper and the first of the gate finger segments.
• the first of the gate resistors may be interposed along an electrical path between the first gate signal distribution bar and the first of the gate finger segments.
• Each gate finger segment may be part of a respective gate split, and the transistor may further include an odd mode resistor that is positioned between two adjacent gate splits.
• the source contact includes a plurality of coUinear discontinuous source contact segments, and the gate jumper extends over the source contact.
• a first gate signal distribution bar may extend in a gap between two adjacent source contact segments.
• the odd mode resistor may be interposed between the first gate signal distribution bar and a second gate signal distribution bar that is coUinear with the first gate signal distribution bar.
• the transistor may include a second source contact that includes a plurality of coUinear discontinuous source contact segments that does not have a gate jumper extending over it, and the odd mode resistor may be between two adjacent ones of the source contact segments of this second source contact.
• a transistor includes a source contact extending in a first direction, a gate jumper extending in the first direction and a gate finger that comprises a plurality of discontinuous gate finger segments which may be coUinear with each other.
• the transistor further includes a plurality of spaced-apart gate resistors that are electrically connected to the gate jumper. A first of the gate finger segments is connected to the gate jumper through a first of the gate resistors.
• the source contact includes a plurality of discontinuous source contact segments
• the first of the gate resistors is in a gap between two adjacent source contact segments.
• the gate jumper may extend over at least some of the source contact segments.
• the transistor may further include a drain contact extending in the first direction adjacent the gate finger so that the gate finger extends between the source contact and the drain contact, a second gate finger that comprises a plurality of discontinuous and coUinear gate fmger segments that extend in the first direction so that the drain contact extends between the gate finger and the second gate fmger, and a second source contact that includes a plurality of discontinuous source contact segments that extends in the first direction adjacent the second gate finger.
• An odd-mode resistor may be provided in a gap between two adjacent source contact segments of the second source contact.
• a gate signal distribution bar may extend between the gate jumper and a first of the gate finger segments of the first gate finger and between the gate jumper and a first of the gate finger segments of the second gate fmger.
• the gate signal distribution bar may be located in a gap between two adjacent source contact segments of the source contact.
• the odd-mode resistor may be connected between the gate signal distribution bar and a second gate signal distribution bar that connects gate fmger segments of a plurality of additional gate fingers to a second gate jumper.
• a transistor includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction.
• Each of the gate fingers comprises at least spaced-apart and generally collinear first and second gate fmger segments, where the first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction.
• a resistor is disposed in the gap region.
• the transistor further includes a plurality of source contacts that extend in the first direction, each source contact including a plurality of discontinuous source contact segments, and each source contact extending between the gate fingers of respective pairs of the gate fingers and a plurality of drain contacts that extend in the first direction, each drain contact extending between the respective pairs of the gate fingers.
• a gate bus may be electrically connected to the gate fingers and a gate jumper may be electrically connected to the gate bus, where the gate jumper is interposed along an electrical path between and at least some of the gate finger segments and the gate bus.
• the resistor may be an odd mode resistor that is positioned between two adjacent ones of the source contact segments of one of the source contacts.
• the resistor may be a gate resistor that is interposed along an electrical path between the gate jumper and the first gate finger segment of a first of the gate fingers.
• the gate resistor may be interposed along a first gate signal distribution bar that extends between the gate jumper and the first gate finger segment of a first of the gate fingers.
• monolithic microwave integrated circuits include a substrate having a transistor and at least one additional circuit formed thereon.
• the transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction.
• the source contact is spaced apart from the drain contact in a second direction that is perpendicular to the first direction.
• the gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.
• An area of a cross-section of the gate jumper in a plane that extends in the second direction and that is perpendicular to the first direction is at least five times greater than an area of a cross-section of the gate finger in the plane.
• the area of this cross-section of the gate jumper may be ten times, twenty times or even thirty times greater than the area of the corresponding cross-section of the gate finger.
• the at least one additional circuit may be an impedance matching circuit and the transistor may be a high electron mobility transistor.
• the gate finger comprises a plurality of physically discontinuous gate finger segments that are electrically connected to each other through the gate jumper.
• the discontinuous gate finger segments may be collinear.
• the gate jumper may be at a different level above the substrate than the gate finger.
• the source contact may include a plurality of discontinuous source contact segments that are electrically connected to each other.
• the gate jumper may extend over at least one of the source contact segments and may be electrically insulated from the source contact. The gate jumper need not extend over all of the source contact segments.
• the monolithic microwave integrated circuit may be an amplifier.
• the amplifier may include at least one driver stage and an output stage, and the output stage may include the at least one transistor.
• the gate jumper may vertically overlap at least one of the drain contact, the source contact and/or the gate finger.
• monolithic microwave integrated circuits include a substrate having a transistor and at least one additional circuit formed thereon.
• the at least one transistor includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction, each of the gate fingers comprising spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other, wherein the first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction.
• the gate jumper may vertically overlap at least one of the drain contact, the source contact and/or the gate finger
• the transistor further comprises a plurality of source contacts that extend in the first direction, each source contact extending between respective pairs of the gate fingers and a plurality of drain contacts that extend in the first direction, each drain contact extending between the gate fingers of the respective pairs of the gate fingers.
• the monolithic microwave integrated circuit may further include a gate bus that is electrically connected to the gate fingers and a gate jumper that is electrically connected to the gate bus, wherein the gate jumper is interposed along an electrical path between at least one of the second gate finger segments and the gate bus.
• An area of a cross-section of the gate jumper in a plane that extends in the second direction and that is perpendicular to the first direction is at least five times greater than an area of a cross-section of the gate finger in the plane.
• the area of this cross-section of the gate jumper may be ten times, twenty times or even thirty times greater than the area of the corresponding cross- section of the gate finger.
• the gate jumper may be at a different level above the substrate than the gate fingers.
• the gate jumper may extend over at least a portion of a first of the source contacts.
• the first of the source contacts may include a plurality of discontinuous source contact segments. In such embodiments, the gate jumper may not extend over a one of the source contact segments that is farthest from the gate bus.
• the at least one additional circuit may be an impedance matching circuit.
• the monolithic microwave integrated circuit comprises an amplifier.
• the amplifier may include at least one driver stage and an output stage, where the output stage includes the transistor.
• the transistor may be a high electron mobility transistor.
• FIG. 1 is a plan view of a metal layout of a conventional multi-cell transistor.
• FIG. 2 is a plan view of a metal layout of a transistor in accordance with some embodiments.
• FIG. 3 is a partial isometric view of the transistor of FIG. 2.
• FIG. 4 is a partial cross section of the transistor of FIG. 2 taken along line A- A* of FIG. 2.
• FIG. 5 is a plan view of a larger version of the transistor of FIG. 2.
• FIG. 6 is a detail plan view of a small portion of the transistor of FIG. 5.
• FIG. 7A is a cross-section of a unit cell of a transistor device taken along line B-B' of FIG. 2.
• FIG. 7B is a cross-section of a unit cell of a transistor device taken along line C-C of FIG. 2.
• FIG. 8 is a plan view of a metal layout of a transistor in accordance with further embodiments.
• FIG. 9A is a partial cross section taken along line A- A' of FIG. 8.
• FIG. 9B is a partial cross section taken along line B-B' of FIG. 8.
• FIG. 10 is a plan view of a larger version of the transistor of FIG. 8.
• FIG. 11 is a detail plan view of a small portion of the transistor of FIG. 10.
• FIG. 12 is a plan view of a metal layout of a transistor in accordance with additional embodiments.
• FIG. 13 is a plan view of a metal layout of a transistor in accordance with yet additional embodiments.
• FIG. 14 is a plan view of a metal layout of a transistor in accordance with still further embodiments.
• FIG. 15 is a plan view of a metal layout of a transistor in accordance with additional embodiments.
• FIG. 16 is a schematic diagram of a conventional wafer that has a plurality of MMIC devices formed thereon.
• FIG. 17 is a plan view of a conventional two-stage MMIC amplifier.
• FIGS. 18A and 18B are schematic plan views of a conventional two-stage MMIC amplifier and a MMIC amplifier that includes a FET driver stage and a FET output stage that each include unit cell FET transistors having segmented gate fingers.
• FIGS. 19A and 19B are schematic diagrams that compare the relative sizes of the conventional two-stage MMIC amplifier of FIG. 18 A to a two-stage MMIC amplifier according to embodiments of the present invention.
• FIGS. 20A-20C are schematic diagrams of several example MMIC amplifiers according to further embodiments of the present invention.
• FIG. 20D is a schematic diagram of a MMIC switch according to further embodiments of the present invention.
• Embodiments of the inventive concepts provide multi-cell transistor devices with large effective gate widths.
• the high frequency gain performance of the transistor may be improved, and electromigration concerns that are normally associated with wide gate fingers can be reduced.
• a larger gate width of a multi-cell transistor device can be accommodated by adding a second layer of metal over the source regions of a unit cell to act as a gate jumper.
• the gate jumper is connected to the gate finger at various locations along the gate finger, effectively dividing the gate finger into multiple segments.
• the gate jumper may be provided by a second layer of metal that extends over and above the source contact.
• the gate jumper may be interposed between the gate pad and at least some of the gate finger segments and may electrically connect the gate pad to the gate finger segments. In some embodiments, the gate jumper could extend over and above the drain contact or the gate finger instead of over and above the source contact.
• the gain performance of the transistor may be improved and electromigration concerns can be alleviated.
• embodiments of the inventive concepts provide transistor layouts that define multiple unit cells in series for each gate finger. Individually, each of the unit cells has a shorter effective gate width. However, when connected in series, the unit cells can increase the effective width of a single gate finger.
• the gate fingers of the series-connected unit cells are connected to a gate bus by means of a second metal bridge that runs over the source contacts of the unit cells. The metal bridge is connected between the source contacts to connecting bars that run along the surface of the substrate between the source contacts and connect to the gate finger.
• a transistor having a layout as described herein may have higher frequency performance and higher output power while at the same time having a reduced current density, which can improve device reliability.
• multi-cell transistors with large effective gate widths are provided in which a plurality of series gate resistors (which are also referred to as "gate resistors" herein) are distributed throughout the device.
• the transistors may have segmented gate fingers, and a series gate resistor may be provided for each gate finger segment or for pairs of gate finger segments.
• This approach breaks up long feedback loops within the gate fingers and drains of the transistor structure by making the feedback loops lossy enough to avoid high levels of instability.
• the distributed series gate resistors may be positioned, for example, in the gap regions that are provided between the gate finger segments of the gate fingers.
• transistors include a drain contact extending along a first axis, a source contact extending along a second axis that is parallel to the first axis, and a gate finger extending between the source contact and the drain contact.
• the gate finger may comprise a plurality of physically discontinuous, collinear gate finger segments that are electrically connected to each other by one or more other structures (e.g., a gate jumper).
• the transistor further includes a plurality of spaced-apart gate resistors that are electrically connected to the gate finger.
• At least one of the gate resistors is disposed in a portion of the region between the first axis and the second axis that is between a first end and a second end of the gate finger when the transistor is viewed from above.
• a gate jumper may be electrically connected to the gate finger, and the gate jumper may be electrically connected to a gate bus.
• the gate jumper may be interposed along an electrical path between a first of the gate finger segments and the gate bus, and a first of the gate resistors may be interposed along an electrical path between the gate jumper and the first of the gate finger segments.
• transistors include a source contact extending in a first direction, a gate jumper extending in the first direction, and a gate finger that comprises a plurality of discontinuous gate finger segments that extend in the first direction.
• the transistor further includes a plurality of spaced-apart gate resistors, each of which is electrically connected to the gate jumper. A first of the gate finger segments is connected to the gate jumper through a first of the gate resistors.
• multi-cell transistors with large effective gate widths are provided in which a plurality of odd mode resistors are distributed throughout the device.
• odd mode resistors may be provided in the gap regions that are formed between the "gate splits," where a gate split refers to the regions where a plurality of gate finger segments extend in parallel to each other.
• the odd mode resistors may be distributed throughout these gap regions to further improve the stability of the transistor.
• the above described gate resistors may also be located in these gap regions.
• transistors that include a plurality of gate fingers that extend in a first direction and that are spaced apart from each other in a second direction that is perpendicular to the first direction, each of the gate fingers comprising at least spaced-apart and generally coUinear first and second gate finger segments that are electrically connected to each other, where the first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction.
• At least one resistor is disposed in the gap region.
• the at least one resistor may be an odd mode resistor and/or a series gate resistor.
• the transistors according to embodiments of the inventive concepts may have large effective gate widths, support increased power density levels and exhibit improved frequency response as compared to conventional transistors. Additionally, the gate series resistors and odd mode resistors, if provided, may help prevent feedback loops that may generate unwanted signals at frequencies that are low enough to be close to or within the operating frequency range of the transistor. Accordingly, the transistors may also exhibit increased stability and hence may have improved production yields and/or better reliability.
• transistors may be provided that include both distributed gate resistors and distributed odd mode resistors.
• transistors having non-segmented gate fingers may include either or both distributed gate resistors and distributed odd mode resistors.
• FET-based MMIC devices are provided that use one or more bypassed gate transistors.
• MMIC amplifiers are provided that use bypassed gate transistors in one or more stages of the amplifier.
• the MMIC amplifiers may include an input impedance matching network, a FET driver stage, an inter-stage impedance matching network, a FET output stage, and an output impedance matching network.
• At least the FET output stage may include bypassed gate transistors. Since gate bypass transistors may have increased gate widths as compared to conventional FET transistors, the MMIC amplifiers may have FET output stages that arc physically larger and that hence have increased power handling capabilities.
• Example embodiments of the bypassed gate transistors according to embodiments of the present invention will now be described in greater detail with reference to FIGS. 2-15.
• FIG. 2 is a plan view of a metal layout of a transistor 100 in accordance with some embodiments.
• the transistor is formed on a semiconductor structure 120 that includes one or more device epitaxial layers which are described in greater detail below.
• the layout of FIG. 2 is simplified for ease of understanding and includes a gate pad 112 that is connected to a gate bus 114 and a drain pad 132 that is connected to a drain bus 134.
• the source pad and source bus are omitted from FIG. 2 for clarity of illustration, but are illustrated in FIGS. 5 and 6.
• a plurality of gate fingers 116 are connected to the gate bus 114 and extend in the y-direction.
• a plurality of drain contacts 136 are connected to the drain bus 134 and extend in parallel with and adjacent to respective ones of the gate fingers 116.
• FIG. 2 it will be appreciated that the transistor 100 may have many more gate fingers 1 16 and drain contacts 136 so that the transistor has a large number of unit cells.
• Source contacts 162 are also provided and extend in the y-direction in parallel with adjacent ones of the gate fingers 116.
• the source contacts 162 are divided in the y- direction into respective source contact segments 162a, 162b and 162c.
• the source contact segments may be connected by means of source contact bars that extend laterally across the device structure (in the x-direction).
• the source contact segments 162a, 162b, 162c may be connected by other means.
• source contact plugs may be provided that electrically connect each source contact segment 162a, 162b, 162c to a common conductive layer located, for example, in a lower level of the device.
• FIG. 2 illustrates three source contact segments 162a- 162c for each source contact 162, the inventive concepts are not limited to such a configuration, and it will be appreciated that the source contact 162 may include two or more source contact segments 162a- 162c.
• the gate fingers 116 may extend in parallel with the source contacts 162 for the entire length of the source contacts 162. However, because the source contacts 162 are divided into source contact segments 162a- 162c, the source contact segments 162a, 162b and 162c define a plurality of series unit cells 40a, 40b, 40c for each of the gate fingers 116. That is, each gate finger 116 acts as a gate contact for a plurality of unit cells 40a, 40b, 40c that are laid out in the direction (y-direction) along which the gate fingers 116 extend and that defines the width of the gate fingers 116. Thus, the total width contributed to the gate periphery of the overall device by each gate finger 116 is equal to the distance by which the gate finger 116 overlaps the adjacent source contact segments 162a, 162b and 162c in the y-direction.
• the transistor 100 further includes a plurality of gate jumpers 172 that extend along the y-direction in parallel with the gate fingers 116.
• the gate jumpers 172 may be formed over the source contacts 162, and may be insulated from the source contacts 162 by, for example, a dielectric layer and/or an air gap. Accordingly, each gate jumper 172 may "vertically overlap" a respective one of the source contacts 162, meaning that an axis that is perpendicular to a major surface of the substrate extends through each gate jumper 172 and at least one of the source contacts 162. In other embodiments, each gate jumper 172 may additionally and/or alternatively vertically overlap a respective drain contact 126 and/or a respective gate finger 116, as will be discussed in further detail below.
• the gate jumpers 172 are electrically connected to the gate bus 114, and connect each gate finger 116 to the gate bus 114 at multiple locations along the gate finger 116.
• the gate jumpers 172 connect to the gate fingers 116 through gate signal distribution bars 174 that are provided at multiple locations along the width of the device and that extend laterally (in the x-direction) within the gaps 162g between adjacent ones of the source contact segments 162a, 162b and 162c.
• the gate signal distribution bars 174 contact the gate fingers 116 at respective gate signal distribution points 176.
• an electrical signal applied to the gate pad 112 (a "gate signal”) is carried to the gate bus 114, and then to the gate jumpers 172, which distribute the gate signal to the gate fingers 116 at multiple locations (the gate signal distribution points 176) along the width of the gate fingers 116.
• each gate finger 116 may also directly connect to the gate bus 114, as shown in FIG. 2.
• the gate signal may travel onto each gate finger 116 from the gate bus 114 and may also be carried by the gate jumpers 172 over a large part of the width of the device and then distributed to the gate fingers 116 at various locations along the width of the device.
• the gate jumpers 172 may have larger cross sectional areas than the gate fingers 116, and thus may be better able to handle higher current densities than the gate fingers 116 without the problems normally associated with increased gate widths, such as electromigration and reduction of high frequency gain performance.
• an area of a cross-section of the gate jumper 172 in a first plane that extends in the x-axis and z-axis directions is at least five times greater than an area of a cross- section of the gate finger 116 in the first plane.
• the area of this cross- section of the gate jumper 172 in the first plane may be ten times, twenty times or even thirty times greater than the area of the corresponding cross-section of the gate finger 116 in the first plane.
• the gate jumper 172 may be designed to have this increased cross-sectional area as compared to the cross-sectional area of the gate finger 116 by making the gate jumper 172 extend further than the gate finger 116 in either the x-axis direction and/or the z-axis direction. It may be most convenient in some embodiments to design the gate jumper 172 to extend further than the gate finger 116 in both the x-axis direction and/or the z-axis direction.
• the length of the gate jumper 172 in the x-axis direction may be at least twice the length of its corresponding gate fingers 116 in the x-axis direction. In other embodiments, the length of the gate jumper 172 in the x-axis direction may be at least three times the length of its corresponding gate fingers 116 in the x-axis direction. In still other embodiments, the length of the gate jumper 172 in the x-axis direction may be at least five times the length of its corresponding gate fingers 116 in the x-axis direction.
• FIG. 7A illustrates how an area of a cross-section of the gate jumper 172 in the first plane may be greater than an area of a cross-section of the gate finger 116 in the first plane.
• the cross-sectional area of the gate jumper 172 is perhaps five times greater than the cross-sectional area of the gate finger 116.
• this difference in cross-sectional area may be much greater (e.g., a difference of a factor of 10, 20, 30 or even 50).
• the gate jumpers in all of the embodiments disclosed herein may have these expanded cross-sectional areas with respect to their corresponding gate fingers.
• FIG. 3 is a partial isometric view of the metal layout of transistor 100
• FIG. 4 is a partial cross section taken along line A- A' of FIG. 2.
• the gate jumpers 172 are formed at a metal level higher than the metal level of the source contact segments 162a, 162b, 162c, the gate fingers 116, the gate bus 114 and the gate signal distribution bars 174.
• the gate jumpers 172 are connected to the gate bus 114 and the gate signal distribution bars 174 by vertical contact plugs 178.
• the gate jumpers 172, gate bus 114, vertical contact plugs 178 and gate signal distribution bars 174 may be formed of a conductive material, such as copper or aluminum, having a very low resistance.
• FIG. 5 is a plan view of a larger version of transistor 100
• FIG. 6 is a detail plan view of a small portion 150 of the metal layout of FIG. 5 (namely the portion within the dotted box in FIG. 5).
• the transistor 100 includes a plurality of unit cells 40 that extend vertically (in the y-direction).
• Each of the unit cells 40 includes one gate finger 116 that extends over the entire width of the device, and is subdivided into series unit cells 40a, 40b, 40c that are arranged in the vertical direction (y-direction) as described above.
• each of the unit cells 40 has an overall width of 1120 microns, with the series unit cells 40a, 40b, and 40c having widths of 370 microns, 380 microns and 370 microns, respectively, although the inventive concepts are not limited to these particular dimensions. In this manner, the effective gate width of the device may be increased.
• a gate pad 112 and gate bus 1 14 are provided at the one end of the structure, while a drain pad 132 and drain bus 134 are provided at the other end of the structure.
• Source pads 122 are provided on the side of the structure and are connected to a source bus 124.
• the source bus 124 is connected to a plurality of source contact bars that extend in the lateral direction (x-direction) to contact the source contact segments 162a, 162b, 162c.
• the source contact segments 162a, 162b, 162c may be electrically connected in other ways such as through the use of source contact plugs that electrically connect each source contact segment 162a, 162b, 162c to a common conductive layer.
• the detail view of the portion 150 of the device layout of the transistor 100 in FIG. 6 also illustrates the gate fingers 116, the gate jumpers 172, gate signal distribution bars 174 and the gate signal distribution points 176 where the gate signal distribution bars 174 contact the gate fingers 116.
• FIG. 7A is a cross-section of a unit cell 40 of a transistor device 100 taken along line B-B' of FIG. 2.
• FIG. 7B is a cross-section of the unit cell 40 taken along line C-C of FIG. 2.
• the transistor structure 100 includes a semiconductor structure 120 including a substrate 200, which may, for example, include 4H-SiC or 6H-SiC.
• a channel layer 210 is formed on the substrate 200, and a barrier layer 220 is formed on the channel layer 210.
• the channel layer 210 and the barrier layer 220 may include Group III- nitride based materials, with the material of the barrier layer 220 having a higher bandgap than the material of the channel layer 210.
• the channel layer 210 may comprise GaN
• the barrier layer 220 may comprise AlGaN.
• a two dimensional electron gas (2DEG) is induced in the channel layer 210 at a junction between the channel layer 210 and the barrier layer 220.
• the 2DEG acts as a highly conductive layer that allows conduction between the source and drain regions of the device that are beneath a source contact segment 162b and a drain contact 136, respectively.
• the source contact segment 162b and the drain contact 136 are formed on the barrier layer 220.
• a gate finger 116 is formed on the barrier layer 220 between the drain contact 136 and the source contact segment 162b.
• a gate jumper 172 is provided over the source contact segment 162b, and is connected to the gate finger 116 through a vertical contact plug 178 and a gate signal distribution bar 174.
• the vertical contact plug 178 and the gate signal distribution bar 174 are provided in gaps 162g between adjacent ones of the source contact segments 162a- 162c and do not physically contact the source contact segments 162a- 162c.
• a first interlayer insulating layer 232 is formed over the drain contact 136, the gate finger 116, the source contact segment 162b and the gate signal distribution bar 174.
• the interlayer insulating layer 232 may include a dielectric material, such as SiN, Si0 2 , etc.
• the vertical contact plug 178 penetrates the first interlayer insulating layer 232.
• the gate jumper 172 is formed on the first interlayer insulating layer 232, which insulates the gate jumper 172 from the source contact segment 162b.
• a second interlayer insulating layer 234 may be formed on the first interlayer insulating layer 232 and the gate jumper 172.
• the second interlayer insulating layer 234 may include a dielectric material, such as SiN, Si0 2 , etc.
• the material of the gate finger 116 may be chosen based on the composition of the barrier layer 220. However, in certain embodiments, conventional materials capable of making a Schottky contact to a nitride based semiconductor material may be used, such as Ni, Pt, NiSi x , Cu, Pd, Cr, W and/or WSiN.
• the drain contacts 136 and source contact segments 162 may include a metal, such as TiAIN, that can form an ohmic contact to GaN.
• Series gate resistors and odd mode resistors may be included in the high power transistors according to embodiments of the present invention in order to stabilize the feedback loops within the gate fingers and drains of the device.
• the gates may have long gate widths in order to increase the gate periphery of the device, which results in long feedback loops. Because these high power transistors have large
• the feedback loops may be prone to instability.
• the feedback loops may generate an unwanted signal which may be in or out of the frequency band of operation of the transistor. In either case, the generation of such a signal may be problematic, and may render the transistor unusable.
• the instability of the feedback loops tends to increase with the length of the feedback loop.
• high power transistors are provided that include multiple series gate resistors and/or odd mode resistors that are distributed throughout the device and, in particular, along the long gate fingers.
• the distributed series gate resistors and/or odd mode resistors may be particularly advantageous in transistors that have segmented gate fingers as such devices may include gap regions between the "gate splits" that are natural locations for locating the series gate resistors and/or odd mode resistors along the width of the gate fingers.
• the term "gate splits" refers to the shorter arrays of gate finger segments that are produced when long gate fingers are segmented into multiple gate finger segments as discussed above with reference to FIGS. 2-7.
• the gap regions that are present between adjacent gate splits may be a convenient location for implementing the distributed series gate resistors and odd mode resistors, as will be discussed in greater detail below.
• the feedback loops may become sufficiently lossy such that the potential instability is overcome. Accordingly, by distributing the series gate resistors and/or odd mode resistors along the extended width of the gate fingers it may be possible to increase device yield and/or reduce the failure rate of devices in the field. Moreover, when the series gate resistors and/or odd mode resistors are distributed along and between gate finger segments of a segmented gate fingers, relatively small resistance levels may be used. For example, if a transistor has three gate splits, the resistance levels may be about one third the size of the resistance levels that would be used if the gate fingers were not segmented.
• FIG. 8 is a plan (top) view of a metal layout of a transistor 300 in accordance with further embodiments that implements both the series gate resistors and the odd mode resistors in a distributed fashion, as discussed above.
• the transistor 300 is formed on a semiconductor structure 320 that includes one or more device epitaxial layers.
• the semiconductor structure 320 may be the same as the semiconductor structure 120 discussed above with reference to FIGS. 7 A and 7B.
• the layout of FIG. 8 is simplified for ease of understanding and includes a pair of gate pads 312 that are connected to a respective pair of gate buses 314, as well as a drain pad 332 that is connected to a drain bus 334.
• a source pad 322 and source bus are also included in the transistor 300, but are omitted from FIG. 8 for clarity of illustration.
• the source pad 322 is shown in FIG. 10.
• a plurality of gate fingers 316 are connected to each gate bus 314 and extend in the y-direction. Each gate finger 316 is divided in the y-direction into three gate finger segments 316a, 316b and 316c. The first gate finger segments may (but need not) connect directly to the gate bus 314 without having a gate jumper 372 interposed therebetween. A gate jumper may be interposed between gate finger segments 316b, 316c and the gate bus 314. As described below, the gate finger segments 316a, 316b, 316c of each gate finger 316 may be electrically connected to each other via the gate jumpers 372, gate signal distribution bars 374 and vertical contact plugs 378 (FIG. 9A).
• a plurality of drain contacts 336 are connected to the drain bus 334 and extend in parallel with and adjacent respective ones of the gate fingers 316.
• the gate signal distribution bars 374 may be formed at a different vertical level in the device than the gate distribution bars 174 of transistor 100 to allow the gate signal distribution bars 374 to pass over the drain contacts 336, as will be described below.
• Source contacts 362 are also provided and extend in the y-direction in parallel with adjacent ones of the gate fingers 316.
• the source contacts 362 are also divided in the y-direction into respective source contact segments 362a, 362b and 362c.
• the source contact segments 362a, 362b, 362c may be electrically connected to each other via source contact plugs 364.
• Each source contact plug 364 may electrically connect a respective source contact segment 362a, 362b, 362c to a common conductive layer that acts as a source bus. This source bus may be located, for example, in a lower level of the device. More than one source contact plug 364 may be provided per source contact segment 362a, 362b, 362c in some embodiments. Two representative source contact plugs 364 are illustrated on one source contact segment 362c in FIG. 8. The source contact plugs 364 for the other source contact segments 362a, 362b, 362c have been omitted from FIG. 8 (as well as from FIGS. 9A-9B and 12-13) to simplify the drawings. FIGS.
• FIG. 10 and 11 illustrate how, for example, a pair of source contact plugs 364 may be provided for each source contact segment 362a, 362b, 362c.
• the source contact segments 362a, 362b, 362c may also be electrically connected by other means such as, for example, source contact bars.
• FIG. 8 a total of sixteen segmented gate fingers 316, eight segmented source contacts 362 and eight drain contacts 336 are shown. It will be
• the transistor 300 may have many more gate fingers 316, source contacts 362 and drain contacts 336 so that the transistor 300 has a large number of unit cells. Fewer gate fingers 316, source contacts 362 and drain contacts 336 may be provided in other embodiments.
• FIG. 8 illustrates three gate finger segments 316a-316c and three source contact segments 362a-362c for each respective gate finger 316 and source contact 362, the inventive concepts are not limited to such a configuration.
• a gate finger 316 may include two or more gate finger segments and that a source contact 362 may include two or more source contact segments.
• the gate fingers 316 may extend in parallel with the source contacts 362 for the entire length of the source contacts 362. Because the gate fingers 316 and source contacts 362 are segmented, a plurality of unit cells 340a, 340b, 340c are defined along each gate finger 316. That is, each gate finger segment 316a-316c acts as a gate contact for a respective unit cell 340a, 340b, 340c that are laid out in the direction (y-direction) along which the gate fingers 316 extend. The sum of the width of the gate finger segments 316a- 316c defines the total width of each gate finger 316. Thus, the total width contributed to the gate periphery of the overall device by each gate finger 316 is equal to the sum of the widths of the gate finger segments 316a-316c in the y-direction.
• the transistor 300 further includes a plurality of gate jumpers 372 that extend along the y-direction in parallel with the gate fingers 316.
• the gate jumpers 372 may be formed at a metal level higher than the metal level of the source contact segments 362, the gate fingers 316 and the gate buses 314.
• the gate jumpers 372 may be formed over the source contacts 362, and may be insulated from the source contacts 362 by, for example, a dielectric layer and/or an air gap.
• the gate jumpers 372 need not extend over the source contact segments 362c that are farthest from the gate buses 314.
• the gate jumpers 372 are electrically connected to the gate buses 314.
• the gate jumpers 372 may electrically connect some or all of the gate finger segments 316a-316c of each gate finger 316 to one of the gate buses 314. In the embodiment depicted in FIG. 8, each gate jumper 372 electrically connects gate finger segments 316b and 316c to a gate bus 314, while gate finger segments 316a are connected to the gate buses 314 via more direct connections. Gate finger segments 316a may be connected to the gate buses 314 through the gate jumper 372 in other embodiments. In some embodiments, the gate jumpers 372 may be positioned over the drain contacts 336 or the gate fingers 316 instead of over the source contacts 362.
• FIG. 9A is a partial cross section taken along line A- A' of FIG. 8.
• FIG. 9B is a partial cross section taken along line B-B 1 of FIG. 8.
• a plurality of gate jumpers 372, gate signal distribution bars 374 and vertical contact plugs 378 are provided.
• the gate jumpers 372 are connected to a gate bus 314 and the gate signal distribution bars 374 by the vertical contact plugs 378.
• the gate jumpers 372, gate signal distribution bars 374 and vertical contact plugs 378 are used to connect each gate finger segment 316b-316c to one of the gate buses 314.
• the gate signal distribution bars 374 may be formed at a higher metal layer in the device than the gate fingers 316.
• the gate signal distribution bars 374 may be formed in the same metal layer of the device as the gate jumpers 372, as shown in FIG. 9A.
• Vertical contact plugs 378 may connect the gate jumpers 372 to the gate buses 314.
• Additional vertical contact plugs 378 (not visible in the cross-section of FIG. 9 A, but located at the points where each gate signal distribution bar passes over a gate resistor 380 in the plan view of FIG. 8) may physically and electrically connect the gate signal distribution bars 374 to the gate resistors and the gate finger segments 316a-316c connected thereto.
• the gate jumpers 372 may extend over and above the source contacts 362. As can be seen in FIG.
• a gate jumper 372 is provided over every other source contact 362, in contrast to the transistor 100 of FIGS. 2-7 which included a gate jumper 172 extending over every source contact 162.
• Each gate jumper 372 in the transistor 300 of FIGS. 8-9B thus feeds four gate fingers 316 instead of two gate fingers 116 as in the case of transistor 100.
• the gate signal distribution bars 374 are formed at a higher metal layer in the device than the gate distribution bars 174 of transistor 100 to allow each gate signal distribution bar 374 to pass over two drain contacts 336 to connect to the outer ones of the four gate finger segments 316a-316c.
• the gate jumpers 372, gate buses 314, vertical contact plugs 378 and gate signal distribution bars 374 may be formed of a conductive material, such as copper or aluminum, having a very low resistance.
• the gate signal distribution bars 374 extend laterally (in the x-direction) in the gaps 362g between adjacent ones of the source contact segments 362a, 362b and 362c.
• the gate signal distribution bars 374 that are coupled to the first gate finger segments 316a may be coupled to two of the gate finger segments 316a.
• Each of the gate signal distribution bars 374 that are coupled to the second or third gate finger segments 316b , 316c may be coupled to four of the gate finger segments 316b or 316c.
• each gate signal distribution bar 374 that is coupled to the first gate finger segments 316a may connect to one of the gate buses 314 through a gate resistor 380.
• the gate signal distribution bars 374 that connect to the gate finger segments 316a may be part of the same metal layer as the gate fingers 316 or part of the same metal layer as the gate jumpers 372, since these gate signal distribution bars 374 need not cross the drain contacts 336.
• Each gate signal distribution bar 374 that is coupled to either second gate fmger segments 316b or third gate finger segments 316c may connect to one of the gate buses 314 through one of the gate jumpers 372, and may connect to the gate fmger segments 316b, 316c through respective vertical contact plugs 378, as can be seen in FIGS. 8 and 9A.
• a series gate resistor 380 is provided on the electrical path between each gate finger segment 316b, 316c and its associated gate signal distribution bar 374.
• FIGS. 8 and 9 A the distribution of an electrical signal that is applied to the gate pad 312 on the left-hand side of FIG. 8 to the leftmost gate fmger segments 316a, 316b, 316c in FIG. 8 will now be discussed.
• the gate signal When the gate signal is applied to the gate pad 312, it is carried to the left gate bus 314.
• the gate signal travels from the left gate bus 314 through a first gate signal distribution bar 374 and a first series gate resistor 380 to the first gate finger segment 316a.
• the gate signal also travels from the left gate bus 314 through a first vertical contact plug 378 that connects the gate bus 314 to a gate jumper 372, through the gate jumper 372 to a second gate signal distribution bar 374, and through the second gate signal distribution bar 374 to a second vertical contact plug 378 that connects to the leftmost second gate finger segment 316b through a second series gate resistor 380.
• the gate signal travels from the left gate bus 314 through the first vertical contact plug 378 to the gate jumper 372, through the gate jumper 372 to a third gate signal distribution bar 374, and through the third gate signal distribution bar 374 to a third vertical contact plug 378 that connects to the leftmost third gate fmger segment 316c through a third series gate resistor 380.
• the gate signal does not travel the full width of any gate finger 316, but instead travels only along the width of a gate fmger segment (for example, gate finger segments 316a) or along the width of a gate fmger segment and part of the gate jumper 372 (for example, gate finger segments 316b) or along the width of a gate finger segment and the full width of the gate jumper 372 (for example, gate finger segments 316c).
• the gate jumpers 372 may have larger cross sectional areas than the gate fingers 316, and thus may be better able to handle higher current densities than the gate fingers 316 without the problems normally associated with increased gate widths, such as electromigration and reduction of high frequency gain performance.
• the gate signals also travel along a portion of a gate signal distribution bar 374 and vertical contact plugs 378.
• FIG. 8 is not drawn to scale and that the distance that a gate signal travels along any gate signal distribution bar 374 may be very small compared to the width of a gate finger segment in the y-direction (e.g., less than 5%), as can be seen in FIGS. 10-11.
• the distances travelled along the vertical contact plugs 378 are also very small. Accordingly, the distance that the gate signals travel along narrow conductive traces may be reduced.
• the transistor 300 includes a plurality of series gate resistors 380 that are distributed throughout the device.
• a series gate resistor 380 is provided at or near one end of each gate finger segment 316a, 316b, 316c.
• the gate fingers 316 are divided into three "gate splits,” namely a first gate split 382a that includes the gate finger segments 316a, a second gate split 382b that includes the gate finger segments 316b, and a third gate split 382c that includes the gate finger segments 316c.
• a first gap region 384a is provided between the gate buses 314 and the first gate split 382a, a second gap region 384b is provided between gate splits 382a and 382b, and a third gap region 384c is provided between gate splits 382b and 382c.
• the series gate resistors 380 may be formed in the above-described gap regions 384a-384c.
• the series gate resistors 380 may be formed, for example, by depositing a higher resistivity conductive material, as compared to the conductive material used to form the gate fingers 316, drain contacts 336, source contacts 362, etc.
• the series gate resistors 380 may be provided in any appropriate vertical level of the transistor 300.
• the series gate resistors 380 may be formed at the same metallization level as the source contacts 362, the drain contacts 336 and the gate fingers 316, as can be seen or inferred from FIGS. 8 and 9 A.
• gate resistors 380 may be replaced with other lossy elements that may act as the functional equivalent to a resistor, such as, for example, a series inductor-capacitor circuit.
• a single series gate resistor 80 may provided between each gate pad 312 and its associated gate bus 314 instead of the distributed series gate resistors 380 included in transistors according to certain embodiments of the present invention.
• each series gate resistor 80 may need to have a relatively high resistance value in order to reduce or prevent instabilities in the device.
• a plurality of series gate resistors 380 are positioned between the gate splits 382 of the device.
• Each of the gate resistors 380 may have a much smaller resistance value as compared to the gate resistors 80 that would be required if gate resistors 80 were only located between the gate pads 312 and the gate buses 314.
• a series gate resistor 380 may be provided for each gate finger segment 316a, 316b, 316c in some embodiments, while in other embodiments some gate finger segments may share a series gate resistor 380. In the particular embodiment depicted in FIG. 8, all of the gate finger segments 316b, 316c have their own associated series gate resistor 380, while pairs of gate finger segments 316a share a single series gate resistor 380. It will also be appreciated that in other embodiments, some of the gate finger segments 316a-316 may not have an associated gate resistor 380.
• the feedback loops within the gate fingers and drains of the transistor may be made sufficiently lossy so that instability may be reduced or eliminated. This may improve device yields and/or reduce the occurrence rate of device failures in the field.
• the current path along any particular gate finger segment 316a, 316b, 316c may only traverse a single series gate resistor 380.
• the series gate resistors 380 may have relatively small resistance values, power losses are reduced and the transistor 300 may thus support higher gain levels for a given size device.
• the transistor 300 includes a drain contact 336 that extends in the y-direction along a first axis, a source contact 362 that extends in the y- direction along a second axis that is parallel to the first axis, and a gate finger 316 that extends between the source contact 362 and the drain contact 336.
• the gate finger 316 comprises a plurality of discontinuous and collinear gate finger segments 316a, 316b, 316c that are electrically connected to each other.
• the transistor 300 further includes a plurality of spaced-apart gate resistors 380 that are electrically connected to the gate finger 316.
• Each gate resistor 380 may be coupled between a respective one of the gate finger segments 316a, 316b, 316c and a respective one of the gate signal distribution bars 374. At least one of the gate resistors 380 is disposed between the first axis and the second axis.
• a gate jumper 372 is interposed along an electrical path between a gate bus 314 and the gate finger 316. The gate jumper 372 is interposed along respective electrical paths between gate finger segments 316b and 316c and the gate bus 314, and respective gate resistors 380 are interposed along respective electrical paths between the gate jumper 372 and the gate finger segments 316b, 316c.
• the transistor 300 includes a source contact 362 that extends in the y-direction, a gate jumper 372 that extends in the y-direction, and a gate finger 316 that comprises a plurality of discontinuous and electrically-connected gate finger segments 316a, 316b, 316c.
• the transistor 300 further includes a plurality of spaced- apart gate resistors 380. Gate finger segments 316b and 316c are connected to the gate jumper 372 through respective first and second gate resistors 380. Pairs of the gate finger segments 316a are connected to the gate buses 314 through respective gate resistors 380.
• odd mode resistors 390 are also included in the transistor 300.
• the odd mode resistors 390 are provided to break up the long odd mode instability feedback loops in the device.
• instabilities may arise.
• a transistor may be stable when a gate jumper 372 feeds four gate fingers 316, but may start to show instability if the gate jumper 372 is used to feed eight gate fingers 316.
• instabilities arise may be a function of the gate finger width and the frequency of operation of the device.
• the odd mode resistors 390 may be interposed between adjacent gate signal distribution bars 374. When the transistor 300 operates normally, the voltage on each side of each odd mode resistor 390 should be the same, and thus no current should flow between adjacent gate signal distribution bars 374.
• Odd mode resistors 390 may be provided in the gap regions 384 that are between adjacent gate splits 382. As shown in FIGS. 8 and 9B, odd mode resistors 390 may be implemented at, for example, the same metallization level as the gate signal distribution bars 374 and source contacts 362, and may be directly connected between two adjacent gate distribution bars 374. Odd mode resistors 390 may also be interposed between adjacent gate buses 314.
• the transistor 300 may include a plurality of gate fingers 316 that extend in the y-direction and that are spaced apart from each other in the x-direction.
• Each of the gate fingers 316 may include a plurality of spaced-apart and generally collinear gate finger segments 316a, 316b, 316c that are electrically connected to each other, where the gate finger segments 316a, 316b, 316c are arranged in respective gate splits 382a, 382b, 382c that are separated by gap regions 384b, 384c.
• Odd mode resistors 390 are disposed in the gap regions 384b, 384c. In example embodiments, the odd mode resistors 390 may be interposed between adjacent gate signal distribution bars 374.
• the source contact 362 need not be segmented in some embodiments.
• the gate resistors 380 and the odd mode resistors may both be implemented in the same metal layer as the gate signal distribution bars 374 and the gate jumpers 372.
• the source contacts 362 need not be segmented.
• the resistors 380, 390 may be implemented directly above, or above and to the side of, the source contacts 362 in other embodiments, and that each source contact 362 may be a single, continuous (i.e., non- segmented) source contact 362.
• FIG. 8 depicts a transistor 300 that includes segmented gate fingers 316 and segmented source contacts 362, it will be appreciated that embodiments of the present invention are not limited thereto.
• the drain contacts 336 may be segmented in a similar fashion so that each drain contact includes, for example, three separate segments. When the drain contacts 336 are segmented, they may be electrically connected to each other via, for example, drain contact plugs and another metallization layer in the device.
• the source contacts 362 may or may not be segmented.
• the gate fingers 316 may be segmented as shown in FIG. 8 or may not be segmented as shown in FIG. 2 (as well as in FIGS.
• Segmenting the drain contacts may provide additional room in the regions between the gate splits for gate resistors 380 and/or odd mode resistors 390.
• the transistor 300 of FIG. 8 could be modified so that reference numerals 332, 334 and 336 were a source pad, a source bus and source contacts, respectively, and reference numerals 362
• FIG. 8 may also be viewed as an embodiment having segmented gate fingers 316 and segmented drain contacts 362 simply by reversing the source and drain features.
• FIG. 10 is a plan view of a larger version of the transistor 300 of FIG. 8.
• FIG. 11 is a detail plan view of a small portion 302 of the transistor 300 of FIG. 10.
• the transistor 300 includes a plurality of unit cells that extend vertically (in the y-direction).
• Each of the unit cells includes a gate finger 316 that extends over the entire width of the device, and is subdivided into series unit cells 340a, 340b, 340c that are arranged in the vertical direction (y-direction) as described above.
• each of the unit cells 340 has an overall width of 1120 microns, with the series unit cells 340a, 340b, and 340c having widths of 370 microns, 380 microns and 370 microns, respectively, although the inventive concepts are not limited to these particular dimensions.
• a plurality of gate buses 314 are provided at the one end of the structure, while a drain bus 334 is provided at the other end of the structure.
• Source pads 322 are provided on the side of the structure and are connected to a source bus that is located, for example, on a lower metallized layer of the device (not shown).
• the source contact segments 362a, 362b, 362c are connected to the source bus via contact plugs 364.
• the detail view of the portion 302 of the device layout of the transistor 300 in FIG. 11 also illustrates the gate fingers 316, the gate jumpers 372, the gate signal distribution bars 374, the series gate resistors 380 and the odd mode resistors 390.
• the transistors according to embodiments of the inventive concepts may include a semiconductor structure that is a multiple layer structure.
• the semiconductor structure 120 of transistor 100 may include a substrate 200 (e.g., 4H-SiC or 6H-SiC) that has at least a channel layer 210 and a barrier layer 220 formed thereon.
• a substrate 200 e.g., 4H-SiC or 6H-SiC
• the discussion of the semiconductor structure 120 in FIGS. 7 A and 7B applies equally to the semiconductor structures of each of the other embodiments described herein, although the metallization and other aspects of the device will vary based on the differences between the various embodiments depicted in the figures.
• transistors described herein may include silicon carbide substrates and Group Ill-nitride based channel and barrier layers, and that the semiconductor structures of these transistors may operate in the manner described with reference to FIGS. 7 A and 7B.
• FIG. 12 is a plan view of a metal layout of a transistor 400 in accordance with further embodiments of the inventive concepts.
• the transistor 400 is similar to the transistor 300 discussed above with reference to FIGS. 8-11, except that the transistor 400 uses a series gate resistors 80 that are connected between each gate pad 312 and a respective gate bus 314 instead of the distributed series gate resistors 380 that are included in the transistor 300. Since aside from this change the two transistors 300, 400 may otherwise be essentially identical, further discussion of the transistor 400 will be omitted.
• FIG. 13 is a plan view of a metal layout of a transistor 500 in accordance with still further embodiments of the inventive concepts.
• the transistor 500 is also similar to the transistor 300 discussed above with reference to FIGS. 8-11, except that the transistor 500 uses a single odd mode resistor 90 between each pair of adjacent gate buses 314 and does not include the distributed odd mode resistors 390 that are provided in the gap regions 384b, 384c in transistor 300 of FIG. 8. Since aside from this change the two transistors 300, 500 may otherwise be essentially identical, further discussion of the transistor 500 will be omitted.
• FIG. 14 is a plan view of a metal layout of a transistor 100' that is identical to the transistor 100 described above, except that it has been modified to include series gate resistors 180 that may be identical to the series gate resistors 380 of FIG. 8.
• FIG. 15 is a plan view of a metal layout of a transistor 300' that is similar to the transistor 300 described above, except that the gate fingers 316 are no longer segmented, and the location of the series gate resistors 380 are modified accordingly.
• FIGS. 14 and 15 are provided to illustrate a few of the possible combinations of the different embodiments that result in additional embodiments.
• Embodiments of the inventive concepts may be particularly well suited for use in connection with Group Ill-nitride based high electron mobility transistor (HEMT) devices.
• Group III nitride refers to those semiconducting compounds formed between nitrogen and the elements in Group III of the periodic table, usually aluminum (Al), gallium (Ga), and/or indium (In).
• Al aluminum
• Ga gallium
• In indium
• the term also refers to ternary and quaternary compounds such as AlGaN and AlInGaN. These compounds all have empirical formulas in which one mole of nitrogen is combined with a total of one mole of the Group III elements.
• Suitable structures for GaN-based HEMTs that may utilize embodiments of the present invention are described, for example, in commonly assigned U.S. Publication No. 2002/0066908A1 published Jun. 6, 2002, for "Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors Having A Gate Contact On A Gallium Nitride Based Cap Segment And Methods Of Fabricating Same," U.S. Publication No. 2002/0167023 Al for "Group-Ill Nitride Based High Electron Mobility Transistor (HEMT) With Barrier/Spacer Layer,” published Nov. 14, 2002, U.S. Publication No.
• the substrate 200 may be a semi-insulating silicon carbide (SiC) substrate that may be, for example, 4H polytype of silicon carbide.
• SiC silicon carbide
• Other silicon carbide candidate polytypes include the 3C, 6H, and 15R polytypes.
• Optional buffer, nucleation and/or transition layers may be provided on the substrate 200 beneath the channel layer 210.
• an A1N buffer layer may be included to provide an appropriate crystal structure transition between the silicon carbide substrate and the remainder of the device.
• strain balancing transition layer(s) may also be provided as described, for example, in commonly assigned U.S. Publication 2003/0102482A1, published Jun. 5, 2003, and entitled “Strain Balanced Nitride Hetrojunction Transistors And Methods Of Fabricating Strain Balanced Nitride Heteroj unction Transistors," the disclosure of which is incorporated herein by reference as if set forth fully herein.
• one or more capping layers such as SiN capping layers, may be provided on the barrier layer 220.
• Silicon carbide has a much closer crystal lattice match to Group III nitrides than does sapphire (A1 2 0 3 ), which is a very common substrate material for Group III nitride devices.
• the closer lattice match of SiC may result in Group III nitride films of higher quality than those generally available on sapphire.
• Silicon carbide also has a very high thermal conductivity so that the total output power of Group III nitride devices on silicon carbide is, typically, not as limited by thermal dissipation of the substrate as in the case of the same devices formed on sapphire.
• the availability of semi-insulating silicon carbide substrates may provide for device isolation and reduced parasitic capacitance.
• Appropriate SiC substrates are manufactured by, for example, Cree, Inc., of Durham, N.C., the assignee of the present invention.
• the channel layer 210 is a Group Ill-nitride, such as Al x Ga 1-x N where 0 ⁇ x ⁇ l, provided that the energy of the conduction band edge of the channel layer 210 is less than the energy of the conduction band edge of the barrier layer 220 at the interface between the channel and barrier layers.
• x 0, indicating that the channel layer 210 is GaN.
• the channel layer 210 may also be other Group Ill-nitrides such as InGaN, AlInGaN or the like.
• the channel layer 210 may be undoped or unintentionally doped and may be grown to a thickness of greater than about 20 A.
• the channel layer 210 may also be a multilayer structure, such as a superlattice or combinations of GaN, AlGaN or the like.
• the channel layer 210 may have a bandgap that is less than the bandgap of the barrier layer 220, and the channel layer 210 may also have a larger electron affinity than the barrier layer 220.
• the barrier layer 220 is A1N, AlInN, AlGaN or AlInGaN with a thickness of between about 0.1 nm and about 10 nm.
• the barrier layer 22 is thick enough and has a high enough Al composition and doping to induce a significant carrier
• the barrier layer 220 may be a Group Ill-nitride and has a bandgap larger than that of the channel layer 210 and a smaller electron affinity than the channel layer 210. Accordingly, in certain embodiments of the present invention, the barrier layer 220 may include AlGaN, AlInGaN and/or A1N or combinations of layers thereof. The barrier layer 220 may, for example, be from about 0.1 nm to about 30 nm thick. In certain embodiments of the present invention, the barrier layer 220 is undoped or doped with an n-type dopant to a concentration less than about 10 cm . In some embodiments of the present invention, the barrier layer 220 is Al x Gai -x N where 0 ⁇ x ⁇ l . In particular embodiments, the aluminum concentration is about 25%. However, in other embodiments of the present invention, the barrier layer 220 comprises AlGaN with an aluminum concentration of between about 5% and about 100%. In specific embodiments of the present invention, the aluminum
• concentration is greater than about 10%.
• embodiments of the bypassed gate transistors are illustrated with reference to a GaN High Electron Mobility Transistor (HEMT) structure, the present inventive concepts are not limited to such devices.
• embodiments of the present invention may include other transistor devices having a plurality of unit cells and a controlling electrode.
• Embodiments of the present invention may be suitable for use in any semiconductor device where a wider controlling electrode is desired and multiple unit cells of the device are present.
• embodiments of the present invention may be suitable for use in various types of devices, such as, MESFETs, MMICs, SITs, LDMOS, BJTs, pHEMTs, etc., fabricated using SiC, GaN, GaAs, silicon, etc.
• MMIC monolithic microwave integrated circuit
• These MMIC devices may also exhibit high output power density for a given operating frequency.
• the MMIC devices may support the same output power level as comparable conventional MMIC devices, but do so in a significantly smaller package.
• the MMIC devices according to embodiments of the present invention may exhibit enhanced performance, generate significant cost savings and/or have improved reliability.
• MMIC devices are used in a wide variety of applications including radar, cellular communications, satellite communications, electronic warfare applications and the like.
• MMIC devices are high frequency devices (i.e., devices operating in the microwave frequency range, which extends from about 300 MHz to about 300 GHz), and many applications where MMIC devices are used must be capable of supporting high output power levels.
• MMIC devices are formed in high bandgap semiconductor material systems such as silicon carbide, gallium arsenide and/or gallium nitride based semiconductor material systems. MMIC devices formed in these semiconductor material systems may generally operate at higher frequencies and support higher power density levels.
• MMIC devices include field effect transistors (FETs) such as metal oxide semiconductor field effect transistors (MOSFETs) and high electron mobility transistors (HEMTs).
• FETs field effect transistors
• MOSFETs metal oxide semiconductor field effect transistors
• HEMTs high electron mobility transistors
• high power RF amplifiers, low noise RF amplifiers, RF switches, RF limiters, RF mixers and various other circuits may include one or more FETs.
• FETs field effect transistors
• MOSFETs metal oxide semiconductor field effect transistors
• HEMTs high electron mobility transistors
• high power RF amplifiers, low noise RF amplifiers, RF switches, RF limiters, RF mixers and various other circuits may include one or more FETs.
• the above-described MMIC devices will each have a unit cell structure in which a plurality of individual FET transistor cells are connected in parallel.
• the unit cell structure allows the MMIC device to support higher output power levels.
• the output power level that a FET-based MMIC device supports is based on the current carrying capabilities of the output stage of the MMIC device.
• the current carrying capabilities of the output stage may be directly proportional to the physical size (area) of the output stage when viewed in plan view.
• the "good gate area" of a FET-based MMIC device refers to the portion of the device in which the FET output stage is formed.
• the good gate area for a MMIC device may be constrained because the equipment used in the wafer-level fabrication processes may only be capable of forming fine patterns in the device over a limited area.
• the primary constraint on the size of the good gate area is in the direction perpendicular to the direction in which the gate fingers of the FET transistors in each unit cell extend. This direction, which corresponds to the x-axis direction in FIGS.
• the FET output stage 16-20D determines how many unit cell transistors may be included in the FET output stage (this direction is referred to herein as the "length" of the good gate area, and the y-axis direction is referred to as the "width" of the good gate area since the width of a gate finger refers to the distance that the gate finger extends in the y-axis direction, as described above with reference to FIG. 1). Since the length of the good gate area is typically much less than the diameter of the wafer on which the MMIC devices are formed, a large number of separate MMIC devices may be formed on the wafer. In many cases, conventional high power MMIC devices use the entire length of the good gate area to form the FET output stage, and hence expanding the good gate area requires acquiring processing equipment that can form fine patterns over larger areas, to the extent that such equipment is even available.
• the physical size of the output stage, and hence the output power level that the output stage supports, may also be increased by increasing the width of the gate fingers in the output stage, as this acts to increase the size of the output stage in the y-axis direction.
• the width of the gate fingers may be limited because the resistance of each unit cell FET transistor is directly proportional to the width of the gate finger thereof, and as the resistance increases so does the power loss.
• the width of the gate fingers in the output stage may effectively be limited by power loss concerns.
• the resistance is also a function of the frequency of the microwave signals (with increased frequency corresponding to increased resistance), and hence the frequency of the microwave signals (along with other desired or required performance parameters) may effectively set a maximum width for the gate fingers.
• the thermal operating environment of the MMIC device also impacts the maximum output power level that the device can support because the thermal operating environment typically sets a minimum required spacing between gate lingers that is sufficient to avoid excessive mutual heating that can degrade the performance of the MMIC device.
• the thermal operating environment may depend upon one or more parameters such as the type of MMIC device, the efficiency of the device, the mode of operation (e.g., pulsed or continuous wave operation for a MMIC amplifier), etc. Once again, these parameters are typically fixed by the intended application for the MMIC device and specified performance parameters. As such, the maximum supportable output levels for various MMIC devices may be essentially fixed by various constraints such as the length of the good gate area, the operating frequency of the device and the thermal operating environment for the device.
• MMIC devices that would support higher output power levels, if such devices could be fabricated.
• the MMIC devices according to certain embodiments of the present invention may be capable of supporting significantly higher output power levels than comparable conventional MMIC devices.
• FIG. 16 is a schematic diagram of a conventional wafer 600 that has a plurality of MMIC devices formed thereon.
• the wafer may comprise, for example, a silicon carbide or sapphire wafer that has a plurality of gallium nitride based layers (e.g., GaN, AlGaN, etc.) and metallization layers formed thereon.
• the wafer 600 is typically divided into a grid pattern 610, and a MMIC device 630 is formed in each "cell" 620 of the grid pattern 610 (only three MMIC devices 630 are pictured in FIG. 16 to simplify the drawing).
• the size of each cell 620 may be based on the available processing equipment.
• each cell 620 may be 10 mm by 10 mm square in an example embodiment. In another example embodiment, the dimensions of each cell 620 may be 6 mm by 6 mm.
• the cells 620 may have other dimensions, and the length and width need not be the same. It will also be appreciated that only certain portions of a MMIC device need be contained within the cell 620. For example, in a MMIC amplifier, the FET amplification stages may be contained within the cell 620, but input and/or output impedance matching circuits may be formed outside the cell 620 since these circuits may be formed without fine patterning.
• each MMIC device 630 may act to limit the maximum output power that each MMIC device 630 may support.
• FIG. 17 is a plan view of a conventional two-stage MMIC amplifier 700.
• the MMIC amplifier 700 illustrated in FIG. 17 may be the MMIC device 630 in one or more of the cells 620 of the wafer 600 of FIG. 16.
• the MMIC amplifier 700 includes a FET driver stage 710 and a FET output stage 720, which represent the two amplification stages of the two- stage MMIC amplifier 700.
• the MMIC amplifier 700 further includes an input impedance matching circuit 730, an inter-stage impedance matching circuit 740 and an output impedance matching circuit 750.
• An input pad 760 and an output pad 762 may also be provided, along with other pads 764 that provide power supply and ground connections for the MMIC device 700.
• the maximum supportable output power of the MMIC amplifier 700 will be based on the maximum current level that is supported by the FET output stage 720.
• An input signal in the form of a microwave signal may be input to the MMIC amplifier 700 at input pad 760.
• the input RF signal is passed through the input stage impedance matching circuit 730 which matches the impedance at the input of the FET driver stage 710 to the impedance seen at the input pad 760.
• the FET driver stage 710 amplifies the RF signal input thereto to provide a higher power RF signal.
• the higher power RF signal output by the FET driver stage 710 may be provided (after appropriate impedance matching by the inter-stage impedance matching circuit 740) as the input signal to the FET output stage 720.
• the FET output stage 720 amplifies the RF signal input thereto, to further increase the power thereof.
• the high power RF signal output by the FET output stage 720 passes through the output stage impedance matching circuit 750 and is output from the MMIC device 700 at the output pad 762.
• the FET driver stage 710 may be implemented, for example, as a plurality of unit cell FET transistors 712 (e.g., HEMT transistors) that are electrically connected in parallel to each other.
• the FET output stage 720 may likewise be implemented, for example, as a plurality of unit cell FET transistors 712 (e.g., HEMT transistors) that are electrically connected in parallel to each other.
• the FET output stage 720 typically includes more unit cell FET transistors 712 than the FET driver stage 710 in order to improve the efficiency of the MMIC amplifier 700.
• the input impedance matching circuit 730 may comprise, for example, one or more capacitors, inductors, resistors and/or other circuit elements that are arranged to match the impedance of the RF signal input to the MMIC amplifier 700 at input pad 760 to the impedance seen at the input of the FET driver stage 710.
• the inter-stage impedance matching circuit 740 may comprise, for example, one or more capacitors, inductors, resistors and/or other circuit elements that are arranged to match the impedance of the signal output from the FET driver stage 710 to the impedance seen at the input of the FET output stage 720.
• the output impedance matching circuit 750 may comprise, for example, one or more capacitors, inductors, resistors and/or other circuit elements that are arranged to match the impedance of the signal output from the FET output stage 720 to the impedance seen at the output pad 762 of the MMIC amplifier 700.
• the maximum output power level supported by a MMIC amplifier such as the two-stage MMIC amplifier 700 of FIG. 17 is a function of (1) the number of unit cell FET transistors 712 in the FET output stage 720 and (2) the power supported by each unit cell FET transistor 712 in the FET output stage 720.
• the number of unit cell FET transistors 712 in the FET output stage 720 may be determined by (1) the "length" of the good gate area (which is the length of the MMIC device 700 in the x-axis direction of FIG. 17) and (2) the spacing between the gate fingers of adjacent unit cell FET transistors 712. As discussed above, the length of the good gate area is set by the size of the cells 620 (see FIG.
• the minimum gate finger spacing may be set based on thermal considerations that may be a function of the amplifier design criteria. Consequently, the number of unit cell FET transistors 712 in the FET output stage 720 may not readily be increased above a limit that is set based on the size of the cells 620 and the amplifier design criteria.
• each unit cell FET transistor 712 of the FET output stage 720 is a function of the gate finger width (i.e., the distance that the gate finger extends in the y-axis direction), with larger gate finger widths supporting increased output power levels.
• the length of each gate finger i.e., the distance that the gate finger extends in the x- axis direction
• the length of each gate finger is typically made very small in order to enable each unit cell FET transistor 712 to switch at high frequencies.
• the width of the gate fingers is increased, the resistance of each gate finger also increases, resulting in increased power loss.
• power loss concerns may limit the width of the gate fingers to, for example, about 500 microns.
• the above physical constraints and considerations may place a practical limit on the maximum supported output power of the device.
• multi-cell FET transistors may be provided that have increased gate widths.
• the larger gate widths may be achieved by using segmented gate fingers and/or gate jumpers, as is described above.
• These multi-cell transistors may be used in place of conventional multi-cell transistors in MMIC devices such as, for example, the above- described two-stage MMIC amplifier in order to increase the maximum supportable output power thereof.
• FIGS. 18A and 18B are schematic plan views of, respectively, the conventional two-stage MMIC amplifier 700 of FIG.
• FIGS. 18A and 18B are drawn to the same relative scale so that the size of the various regions of each MMIC amplifier and the overall size of each MMIC amplifier may be visually compared.
• the conventional MMIC amplifier 700 has a FET driver stage 710 and a FET output stage 720, each of which have unit cell FET transistors 712 having gate finger widths of 500 microns.
• the FET driver stage 710 and the FET output stage 720 occupy a relatively small amount of the device area, such as perhaps 20% to 30%.
• the MMIC amplifier 800 may have a FET driver stage 810, a FET output stage 820, an input impedance matching circuit 830, an inter-stage impedance matching circuit 840 and an output impedance matching circuit 850.
• the FET driver stage 810 and the FET output stage 820 each have unit cell FET transistors 812 that have segmented gate fingers and/or gate jumpers according to embodiments of the present invention.
• each unit cell FET transistor 812 has a gate finger comprising three 250 micron gate finger segments. Gate finger segments having larger widths (e.g., 400 microns each) could be used in other embodiments.
• the maximum supportable output power of MMIC amplifier 800 may be approximately 50% greater than the maximum supportable output power of the conventional MMIC amplifier 700.
• the MMIC amplifiers (and other MMIC devices) according to embodiments of the present invention may support output levels that were not achievable using conventional techniques.
• the MMIC amplifiers and other devices according to embodiments of the present invention may achieve these enhanced output power levels without a proportional increase in the size of the device.
• the size of the impedance matching circuits typically increases with increasing output power levels, this increase need not be proportional to the increase in the maximum supported output power level.
• FIGS. 19A and 19B provide another comparison illustrating how the MMIC devices according to embodiments of the present invention may provide enhanced
• FIG. 19A is a schematic diagram of the conventional two-stage MMIC amplifier 700 of FIG. 18 A.
• FIG. 19B is a schematic diagram of a two-stage MMIC amplifier 900 according to embodiments of the present invention that supports higher output power levels than the MMIC device 700 while occupying less area.
• FIGS. 19A and 19B are drawn to the same relative scale so that the size of the various regions of each MMIC amplifier and the overall size of each MMIC amplifier may be visually compared.
• the MMIC amplifier 900 includes a FET driver stage 910 and a FET output stage 920 that each have unit cell FET transistors 912 that have segmented gate fingers and/or gate jumpers according to embodiments of the present invention.
• the MMIC amplifier 900 further includes an input impedance matching circuit 930, an inter-stage impedance matching circuit 940 and an output impedance matching circuit 950.
• each unit cell FET transistor 912 has a gate finger comprising three 250 micron gate finger segments, which is 50% greater than the widths of the gate fingers in the unit cell FET transistors 712 included in the conventional MMIC amplifier 700.
• the MMIC amplifier 900 extends in the x-direction about 25% less than the MMIC amplifier 700. Accordingly, the maximum supportable output power of MMIC amplifier 900 may be approximately 25% greater than the maximum supportable output power of the conventional MMIC amplifier 700, and this output power is achieved with a MMIC amplifier that is about 25% smaller than MMIC amplifier 700.
• the increased performance exhibited by the MMIC amplifier 900 of FIG. 19B may be achieved by using the unit cell FET transistors 912 having segmented (or "bypassed") gate fingers and/or gate jumpers to form the FET driver and output stages 910, 920.
• the use of such bypassed gate FET transistors increases the size of each unit cell 912 which may, for example, provide a 50% increase in output power per unit cell.
• the MMIC amplifier 900 may be smaller than the MMIC amplifier 700 while still supporting higher output current and power levels.
• the MMIC amplifier 900 may support higher output power levels despite its smaller size because the physical area of the FET output stage 920 may be greater than the physical area of the FET output stage 720 of MMIC amplifier 700 due to the longer gate widths of the FET transistors 912 included in the FET output stage 920 of MMIC amplifier 900.
• the cost of a MMIC device may be directly proportional to the size of the device, since the more MMIC devices included on the wafer the lower the cost of each MMIC device. Consequently, the MMIC devices according to embodiments of the present invention may have significant cost advantages as compared to conventional MMIC devices, while providing comparable or even improved performance.
• the smaller device size may also be advantageous in terms of system integration in various applications such as phased array radar systems and massive MIMO beam-forming antenna arrays in which a large number of MMIC devices are used in a device having a relatively small system footprint. This will become increasingly true as more applications move to higher microwave frequencies such as the 28 GHz and 80 GHz bands where each individual radiating element becomes very small.
• FIGS. 20A-20D illustrate several example MMIC devices according to further embodiments of the present invention.
• a single stage MMIC amplifier 1000 may be provided that uses multi-cell FET transistors according to embodiments of the present invention that have segmented gate fingers and/or gate jumpers.
• the example single stage MMIC amplifier 1000 shown in FIG. 20 A includes an input impedance matching stage 1030, a FET
• amplification/output stage 1020 that includes the bypassed gate transistors according to embodiments of the present invention and an output impedance matching stage 1050.
• MMIC amplifiers having more than two stages also may be provided.
• the MMIC amplifier 1100 of FIG. 20B includes a total of four amplification stages, namely first through third FET driver stages 1110, 1114, 1116 and a FET output stage 1120.
• the MMIC amplifier 1100 further includes an input impedance matching circuit 1130, an output impendence matching circuit 1150 and first through third inter-stage impedance matching circuits 1140, 1142, 1144. It will be appreciated that in other embodiments (not pictured) three-stage MMIC amplifiers or MMIC amplifiers having five or more amplification stages may be provided.
• One or more of the first through third FET driver stages 1110, 1114, 1116 and the FET output stage 1120 may include bypassed gate transistors according to embodiments of the present invention.
• FIG. 20C is a schematic plan view of a MMIC amplifier 1200 according to embodiments of the present invention that has a FET output stage 1220 formed using bypassed gate unit cell FET transistors 1222 according to embodiments of the present invention and a FET driver stage 1210 formed using
• the conventional FET transistors 1212 may be used in the FET driver stage 1210 as the good gate length is sufficient to allow for an adequate number of conventional unit cell FET transistors 1212.
• the MMIC amplifier 1200 further includes an input impedance matching circuit 1230, an inter-stage impedance matching circuit 1240 and an output impendence matching circuit 1250.
• a MMIC switch 1300 may be provided that exhibits increased power handling capabilities for a given frequency of operation or which has reduced physical size as compared to a conventional RF switch.
• the MMIC switch 1300 may include, for example, an RF input 1302, a plurality of RF outputs 1304 and a control input 1306.
• a plurality of individual RF switches 1310 may be included in the MMIC switch 1300. Some or all of the RF switches 1310 may be implemented using the bypassed gate transistors according to embodiments of the present invention.
• the MMIC switch 1300 may be used, for example, in an RF switching network of a phased array antenna.
• the maximum output power supported by state of the art MMIC amplifiers is limited due to restrictions on the available good gate area and limitations on the gate width based on loop stability and power loss considerations.
• the MMIC amplifiers according to embodiments of the present invention may provide, for example, an increase in the maximum power density of three times for amplifiers operating at frequencies up to 6 GHz and an increase in the maximum power density of two times for amplifiers operating at frequencies between 6-15 GHz.
• the FET-based MMIC devices according to embodiments of the present invention may use any of the bypassed gate transistor designs disclosed herein to implement the FET transistors included in these MMIC devices.
• each of the FET-based MMIC devices according to embodiments of the present invention that are disclosed herein may use any of the bypassed gate transistors discussed above with reference to FIGS. 2-7, 8-9B, 10-11, 12, 13, 14 and/or 15, along with each modification thereto discussed above.

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