TWI799483B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI799483B
TWI799483B TW107146998A TW107146998A TWI799483B TW I799483 B TWI799483 B TW I799483B TW 107146998 A TW107146998 A TW 107146998A TW 107146998 A TW107146998 A TW 107146998A TW I799483 B TWI799483 B TW I799483B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
TW107146998A
Other languages
English (en)
Other versions
TW201931624A (zh
Inventor
金賢珠
朴炯兆
金桓敎
Original Assignee
大陸商蘇州樂琻半導體有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大陸商蘇州樂琻半導體有限公司 filed Critical 大陸商蘇州樂琻半導體有限公司
Publication of TW201931624A publication Critical patent/TW201931624A/zh
Application granted granted Critical
Publication of TWI799483B publication Critical patent/TWI799483B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
TW107146998A 2017-12-27 2018-12-25 半導體裝置 TWI799483B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20170181407 2017-12-27
KR10-2017-0181407 2017-12-27
??10-2017-0181407 2017-12-27
KR10-2018-0056203 2018-05-16
KR1020180056203A KR102656815B1 (ko) 2017-12-27 2018-05-16 반도체 소자
??10-2018-0056203 2018-05-16

Publications (2)

Publication Number Publication Date
TW201931624A TW201931624A (zh) 2019-08-01
TWI799483B true TWI799483B (zh) 2023-04-21

Family

ID=67225704

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107146998A TWI799483B (zh) 2017-12-27 2018-12-25 半導體裝置

Country Status (4)

Country Link
JP (1) JP7287641B2 (zh)
KR (1) KR102656815B1 (zh)
CN (1) CN110034217B (zh)
TW (1) TWI799483B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021029826A (ja) * 2019-08-28 2021-03-01 株式会社三洋物産 遊技機
CN110911537B (zh) * 2019-11-29 2021-12-28 东莞市中晶半导体科技有限公司 共阴极led芯片及其制作方法
CN113363363B (zh) * 2021-06-02 2022-09-16 厦门三安光电有限公司 半导体发光二极管及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1858921A (zh) * 2005-05-03 2006-11-08 三星电机株式会社 倒装芯片发光二极管及其制造方法
TW201336065A (zh) * 2012-02-17 2013-09-01 Ind Tech Res Inst 發光元件及其製造方法
WO2017034356A1 (ko) * 2015-08-25 2017-03-02 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4632697B2 (ja) * 2004-06-18 2011-02-16 スタンレー電気株式会社 半導体発光素子及びその製造方法
US7679097B2 (en) * 2004-10-21 2010-03-16 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
JP4353167B2 (ja) * 2004-10-21 2009-10-28 日亜化学工業株式会社 半導体発光素子とその製造方法
US7842963B2 (en) * 2006-10-18 2010-11-30 Koninklijke Philips Electronics N.V. Electrical contacts for a semiconductor light emitting apparatus
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
DE102013105870A1 (de) * 2013-06-06 2014-12-24 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2017005191A (ja) * 2015-06-15 2017-01-05 株式会社東芝 半導体発光装置
KR102502331B1 (ko) * 2016-06-10 2023-02-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1858921A (zh) * 2005-05-03 2006-11-08 三星电机株式会社 倒装芯片发光二极管及其制造方法
TW201336065A (zh) * 2012-02-17 2013-09-01 Ind Tech Res Inst 發光元件及其製造方法
WO2017034356A1 (ko) * 2015-08-25 2017-03-02 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지

Also Published As

Publication number Publication date
TW201931624A (zh) 2019-08-01
CN110034217B (zh) 2023-08-18
JP2019121800A (ja) 2019-07-22
KR20190079467A (ko) 2019-07-05
JP7287641B2 (ja) 2023-06-06
KR102656815B1 (ko) 2024-04-15
CN110034217A (zh) 2019-07-19

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