JP7287641B2 - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
JP7287641B2
JP7287641B2 JP2018244777A JP2018244777A JP7287641B2 JP 7287641 B2 JP7287641 B2 JP 7287641B2 JP 2018244777 A JP2018244777 A JP 2018244777A JP 2018244777 A JP2018244777 A JP 2018244777A JP 7287641 B2 JP7287641 B2 JP 7287641B2
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Japan
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recess
layer
semiconductor
region
conductive
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JP2018244777A
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Japanese (ja)
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JP2019121800A (ja
Inventor
キム，ヒョンジュ
パク，ヒュンチョ
キム，ファンキョ
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スージョウ レキン セミコンダクター カンパニー リミテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
JP2018244777A 2017-12-27 2018-12-27 半導体素子 Active JP7287641B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20170181407 2017-12-27
KR10-2017-0181407 2017-12-27
KR1020180056203A KR102656815B1 (ko) 2017-12-27 2018-05-16 반도체 소자
KR10-2018-0056203 2018-05-16

Publications (2)

Publication Number Publication Date
JP2019121800A JP2019121800A (ja) 2019-07-22
JP7287641B2 true JP7287641B2 (ja) 2023-06-06

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ID=67225704

Family Applications (1)

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JP2018244777A Active JP7287641B2 (ja) 2017-12-27 2018-12-27 半導体素子

Country Status (4)

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JP (1) JP7287641B2 (zh)
KR (1) KR102656815B1 (zh)
CN (1) CN110034217B (zh)
TW (1) TWI799483B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021029826A (ja) * 2019-08-28 2021-03-01 株式会社三洋物産 遊技機
CN110911537B (zh) * 2019-11-29 2021-12-28 东莞市中晶半导体科技有限公司 共阴极led芯片及其制作方法
CN113363363B (zh) * 2021-06-02 2022-09-16 厦门三安光电有限公司 半导体发光二极管及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006148087A (ja) 2004-10-21 2006-06-08 Nichia Chem Ind Ltd 半導体発光素子とその製造方法
JP2010507246A (ja) 2006-10-18 2010-03-04 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 半導体発光装置のための電気的コンタクト
US20160093769A1 (en) 2013-06-06 2016-03-31 Osram Opto Semiconductors Gmbh Light-emitting diode with passivation layer
JP2017005191A (ja) 2015-06-15 2017-01-05 株式会社東芝 半導体発光装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4632697B2 (ja) * 2004-06-18 2011-02-16 スタンレー電気株式会社 半導体発光素子及びその製造方法
US7679097B2 (en) * 2004-10-21 2010-03-16 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
KR100597166B1 (ko) * 2005-05-03 2006-07-04 삼성전기주식회사 플립 칩 발광다이오드 및 그 제조방법
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
TWI631697B (zh) * 2012-02-17 2018-08-01 財團法人工業技術研究院 發光元件及其製造方法
WO2017034356A1 (ko) * 2015-08-25 2017-03-02 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지
KR102502331B1 (ko) * 2016-06-10 2023-02-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006148087A (ja) 2004-10-21 2006-06-08 Nichia Chem Ind Ltd 半導体発光素子とその製造方法
JP2010507246A (ja) 2006-10-18 2010-03-04 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 半導体発光装置のための電気的コンタクト
US20160093769A1 (en) 2013-06-06 2016-03-31 Osram Opto Semiconductors Gmbh Light-emitting diode with passivation layer
JP2017005191A (ja) 2015-06-15 2017-01-05 株式会社東芝 半導体発光装置

Also Published As

Publication number Publication date
CN110034217A (zh) 2019-07-19
KR20190079467A (ko) 2019-07-05
CN110034217B (zh) 2023-08-18
KR102656815B1 (ko) 2024-04-15
TWI799483B (zh) 2023-04-21
TW201931624A (zh) 2019-08-01
JP2019121800A (ja) 2019-07-22

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