EP3612343A1 - Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten - Google Patents

Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten

Info

Publication number
EP3612343A1
EP3612343A1 EP18701002.0A EP18701002A EP3612343A1 EP 3612343 A1 EP3612343 A1 EP 3612343A1 EP 18701002 A EP18701002 A EP 18701002A EP 3612343 A1 EP3612343 A1 EP 3612343A1
Authority
EP
European Patent Office
Prior art keywords
solid
layer
laser
donor substrate
modifications
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18701002.0A
Other languages
German (de)
English (en)
French (fr)
Inventor
Marko Swoboda
Ralf Rieske
Christian Beyer
Jan Richter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltectra GmbH
Original Assignee
Siltectra GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102017003830.9A external-priority patent/DE102017003830A1/de
Priority claimed from DE102017007585.9A external-priority patent/DE102017007585A1/de
Application filed by Siltectra GmbH filed Critical Siltectra GmbH
Publication of EP3612343A1 publication Critical patent/EP3612343A1/de
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/146—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor the fluid stream containing a liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Definitions

  • the present invention relates according to claim 1 to a method for separating at least one solid layer of at least one solid and according to claim 16 to a solid, in particular a semiconductor wafer.
  • a conventional wafer is finished before the final desired substrate thickness is achieved by removing the excess material in a final polishing and polishing step.
  • This circumstance is unfavorable for two reasons: on the one hand valuable material is lost in the grinding step, on the other hand the grinding / polishing step has the potential of damaging the substrate the potential for a total loss of the already processed components, which already accounts for a large part of the added value of the product Wafers included.
  • the publication DE 10 2012 001 620 A1 describes the use of an additional sacrificial layer between solid and polymer film, which serves for the improved removal of the polymer film after the splitting off step by decomposing or detaching the sacrificial layer chemically, for example, by addition of suitable reactants.
  • a disadvantage of this method is the long time, which can be up to several hours, which goes to complete removal of the polymer layer. This severely restricts industrial use. To speed up the process of polymer removal, it is possible by appropriate pretreatment additional driving forces in the form of suitable, even at room temperature
  • This object is achieved by a method for separating at least one solid layer of at least one solid according to claim 1.
  • This method preferably comprises at least the steps:
  • Producing a plurality of modifications by means of laser beams inside the solid to form a release plane producing a composite structure by arranging or creating layers and / or components at or above an initially exposed surface of the solid, wherein the exposed surface is part of the solid layer to be separated, introducing an external force in the solid to generate stresses in the solid, the external force being strong enough for the stresses to cause crack propagation along the release plane.
  • the modifications to form the release plane are more preferably generated prior to the formation of the composite structure.
  • the production of a laser modification layer in the solid or substrate or workpiece, which defines the subsequent thin plane or the release plane takes place.
  • the other processes for building or generating layers and / or for component production take place (lithography, etc.).
  • the layers and / or components forming the composite structure together with the solid-state layer are preferably by means of lithography, in particular coating with eg metal compounds, coating, optical exposure (eg scanning through a photomask), developing the photoresist (in particular at low temperatures, such as temperatures below 70 ° C, especially below 50 ° C or below 30 ° C or below ambient temperature or below 20 ° C or below 5 ° C or below 0 ° C), etching of structures.
  • one or more or all of these processes, in particular lithographic processes can in particular be more than 10 times or up to 10 times or more than 20 times or up to 20 times or more than 40 times or until to be repeated 40 times or more than 80 times or up to 80 times.
  • the solid remaining after the separation of the solid-state layer preferably has a thickness which is greater, in particular many times greater, than the thickness of the separated solid-state layer.
  • the solid state material is preferably a semiconductor material or comprises a semiconductor material.
  • a surface of the solid layer to be separated can also be understood such that in the case of a laser treatment to produce the modifications upstream high-temperature step, a coating of the surface generated by the high-temperature process can take place at the then
  • the composite structure is, by definition, only produced after the laser treatment, a multilayer arrangement which may be present before the laser treatment is not named as a composite structure in the context of this patent application but as a multilayer structure Arrangement.
  • thinning means reducing the thickness of the solid, which is preferably a wafer, in order to remove the proportion of material which in the case of ordinary production processes of component-containing solids, in particular wafers, is removed by abrasion, e.g. be milled, sanded or polished away.
  • a metal layer to compensate for the at least partial and preferably majority and particularly preferably complete compensation of a deformation of the solid layer caused by the compressive stresses of the remaining modification constituents or at least partially and preferably predominantly on the surface exposed by the separation of the solid layer from the solid or completely compensating the compressive stresses is generated and / or the metal layer is preferably produced by sputtering or electrochemical deposition.
  • the present method may be defined at least by the following steps, which according to each embodiment, one or more of the with this document disclosed features: Providing a solid, generating modifications, in particular by means of laser radiation, in the solid body for forming or a Ablösese or a Ablöseebene or a crack guide region and separating a solid layer of the solid as a result of crack propagation along the separation region or the Ablöseebene or the crack guide area or parts of the solid body along the separation area or the Ablöseebene or the crack guide area.
  • the aforementioned object is additionally or alternatively achieved by a method for providing at least one solid-state layer, wherein the solid-state layer is separated from a solid.
  • the inventive method preferably comprises at least the steps: generating a plurality of modifications by means of laser beams in the interior of the solid to form a release plane, which are generated by the modifications compressive stresses in the solid, separating the solid layer by a separation of the remaining solid and the solid layer along the formed by the modifications Ablöseebene, wherein at least components of the compressive stress-generating modifications remain on the solid state layer, so many modifications are produced that the solid state layer due to the modifications from the solid body peels off or an external force in the solid state for generating further stresses in the solid is introduced, wherein the external force is so strong that the stresses cause a crack propagation along the release plane formed by the modifications.
  • each of the methods disclosed here additionally or alternatively can comprise the step of producing a material layer, in particular a metal layer, on the surface exposed by the separation of the solid layer from the solid for at least partial and preferably majority and particularly preferably complete compensation by the compressive stresses of the remaining ones Modification components have caused deformation of the solid state layer or for at least partial and preferably majority or complete compensation of the compressive stresses.
  • This solution is advantageous because very flat solid layers can be provided without having to perform a machining of the solid state layer. This is particularly useful in the case of the solid-state material SiC, since its production is very expensive and therefore material losses should be avoided as far as possible. Furthermore, SiC is very hard, which requires the use of very expensive grinding tools that wear very quickly due to the high hardness of SiC. This solution also makes sense since the solid state layers provided are already equipped with a material layer, in particular a metal layer, for forming an electrical contact and / or for forming an interface for heat dissipation.
  • the production of a composite structure preferably also takes place by arranging or producing layers and / or components at or above an initially exposed surface of the solid, wherein the exposed surface forms part of the solid-state layer to be separated off.
  • the modifications to form the release plane are created prior to the formation of the composite structure.
  • an external force may be introduced into the solid for generating stresses in the solid, the external force being strong enough for the stresses to cause crack propagation along the release plane.
  • the above object is additionally or alternatively solved by a method for generating electrical components.
  • the method according to the invention preferably comprises at least the following steps: generation of a multiplicity of modifications by means of laser beams in the interior of a solid for forming a release plane or a separation region or a crack guiding layer or a generation plane, compressive stresses being generated in the solid by the modifications, generating a Composite structure by arranging or creating layers and / or components at or above an initially exposed surface of the solid, wherein the exposed surface is part of the solid layer to be separated, separating the solid layer by separating the remaining solid and the solid layer along the release plane formed by the modifications , wherein at least components of the compressive stress-generating modifications remain on the solid-state layer, with so many modifications being produced that the solids Due to the modifications, the perlayer is detached from the solid or an external force is introduced into the solid for generating further stresses in the solid, the external force being so strong that the stresses cause crack propagation along the release plane formed by the modifications separated solid state layer are preferably compressive
  • the production of a composite structure preferably also takes place by arranging or producing layers and / or components at or above an initially exposed surface of the solid, wherein the exposed surface forms part of the solid-state layer to be separated off.
  • the modifications to form the release plane are created prior to the formation of the composite structure.
  • an external force may be introduced into the solid for generating stresses in the solid, the external force being strong enough for the stresses to cause crack propagation along the release plane.
  • the surface of the solid-state layer exposed as a result of the separation has, according to a preferred embodiment of the present invention, first surface portions which have an Ra value (average roughness) of less than 1, in particular less than 0.9 or less than 0.7 or less than 0.5, in particular between 0.01 and 0.4. Furthermore, the exposed surface of the solid-state layer preferably has second surface portions which have an Ra value (average roughness) of more than 1, in particular between 1 and 5.
  • the proportion of the first surface portions is preferably greater than the proportion of the second surface portions, wherein the second surface portions at least 1% or at least 2% or at least 5% or at least 10% or between 1% and 49% or between 1% and 40% or between 1% and 30% or between 1% and 20% of the total area formed from the first surface portions and the second surface portions.
  • This solution is advantageous because the solid state layer even with proportions have the Ra values between 1 and 5, especially without further surface conditioning, e.g. Grinding or lapping, can be processed further.
  • the material layer in particular metal layer, is produced according to a further preferred embodiment of the present invention in a first state of matter and a temperature above room temperature on the solid layer and is at room temperature in a second state of matter, wherein the transition from the first state of aggregation to the second state of aggregation the metal layer acts on the solid state layer for at least partial compensation and preferably complete compensation of the deformation or the compressive stresses caused by the compressive stresses of the remaining modification constituents.
  • the metal layer in a temperature range above the room temperature at the Solid state layer can be produced, wherein the temperature range is at least 100 ° C or 150 ° C or 200 ° C or 250 ° C or 300 ° C or 350 ° C or 400 ° C above room temperature, and more preferably up to 2000 ° C or less than is the melting or vaporization temperature of the solid state material, wherein the cooling of the metal layer to room temperature, the solid state layer for at least partially balancing and preferably fully compensates for the caused by the compressive stresses of the remaining modifying components deformation or to compensate for compressive stresses.
  • the solid state layer is preferably deformed negatively to the deformation caused by the compressive stresses or by which the compressive stresses are compensated.
  • the compressive stresses preferably cause a deformation which is referred to as Bow.
  • 20 ° C. is preferably defined as the room temperature, wherein the room temperature can also describe the temperature in a process space, which may preferably be between 0 ° C. and 100 ° C. or between 20 ° C. and 200 ° C.
  • the metal layer is produced by sputtering or electrochemical deposition according to another preferred embodiment of the present invention. It is preferred, e.g. in a modified SiC solid state layer, known sputtering materials or materials suitable for electrochemical deposition, e.g. Titanium, titanium-tungsten, nickel, platinum, TaSi2 and / or gold.
  • the thickness of the metal layer is determined preferably by the parameters thickness of the solid state layer, material of the solid state layer, area of the solid state layer, number and type of modifications.
  • the solid body consists of silicon carbide (SiC) or silicon carbide (SiC), the solid state layer preferably having a thickness of less than 200 ⁇ m, in particular having a thickness of less than 150 ⁇ m or less than 125 ⁇ or less than 1 10 ⁇ or less than 100 ⁇ or less than 90 ⁇ or less than 75 ⁇ , is separated from the solid.
  • SiC silicon carbide
  • SiC silicon carbide
  • SiC silicon carbide
  • the electrical components are vertical components, in particular Schottky diodes and / or metal oxide semiconductor field effect transistors (MOSFETs), wherein the metal layer forms an electrical contact, in particular an ohmic contact, and / or a Forming interface for heat dissipation.
  • MOSFETs metal oxide semiconductor field effect transistors
  • This embodiment is advantageous because vertical components can be produced very flat (eg by the use of SiC) and thus also more easily by the present invention with comparatively low material and wear losses. This creates the possibility that significantly more energy-efficient and less expensive electrical components are produced.
  • the electrical components are according to a further preferred embodiment of the present invention horizontal components, in particular high electron mobility transistors (HEMT), wherein the metal layer preferably forms an interface for heat dissipation.
  • HEMT high electron mobility transistors
  • This embodiment is advantageous because these components can be made smaller, lighter and cheaper.
  • an average, in particular at least 4 or at least 9 or at least 36 or at least 100, of electrical components is produced per cm 2 of a flat surface side of the solid-state layer, the electrical components being separated from one another after their generation by dicing become.
  • This embodiment is advantageous because the individual electrical components are quickly and very gently separated from each other.
  • the individual electrical components preferably have rectangular, in particular square, base surfaces.
  • the electrical components preferably have outer edges between 0.1 mm and 5 mm.
  • a receiving layer is arranged on an exposed surface of the composite structure for introducing the external force, wherein the receiving layer comprises a polymer material and the receiving layer for thermally, especially mechanically, generating stresses in the solid body, wherein the thermal Loading is a cooling of the receiving layer to a temperature below the ambient temperature, wherein the cooling takes place such that the polymer material of the receiving layer performs a partial or complete crystallization and / or a glass transition and wherein the tensions a crack in the solid propagates along the Ablöseebene separating the first solid layer from the solid.
  • the external force can preferably be introduced into the solid by impingement of the solid with sound, in particular with ultrasound, in which case the solid is preferably arranged in a container filled with a liquid.
  • the sound, in particular ultrasound can with a frequency range of 20 kHz to 100 kHz but also in the high-frequency sound field with a frequency range from 100 kHz to 1 MHz are used. Due to these frequencies, it is preferable for solids in liquid media to cavitation processes with sequelae such as collapsing cavitation bubbles. In liquid media, especially in the range of phase boundaries, nanosecond implosion and deformation of dynamically forming cavitation bubbles and the formation of a microjet occur.
  • the spatially resolved energy release is preferably done in the form of an adiabatic heating in a very small space by the very rapid compression of the gas. Extreme temperatures of up to 5000 Kelvin and pressures of up to 500 bar occur, enabling new, otherwise non-existent physical reactions in the area of the boundary layer. These enormous pressure differences result from the recoil of the bubble front to the outside (imploding shockwave). This leads to greatly increased reaction rates in this area.
  • a spatially resolved CNC controlled application with the aid of an ultrasound tip (sonotrode) which can specifically bring about an influencing of the crack initiation and / or crack guidance is particularly preferred.
  • the spatially resolved pressurization can be used specifically for crack initiation and / or crack guidance.
  • the homogeneous and / or spatially resolved embodiment is advantageous, since, in particular when using the recording layer, a very precise introduction of force can be effected and thus crack initiation and / or crack guidance.
  • the solid is, in accordance with another preferred embodiment of the present invention, treated with at least one high temperature process prior to generation of the stripping level, wherein the high temperature process is carried out at a temperature between 70 ° C and the melting or evaporating temperature of the material of the solid.
  • parameters of the laser process can be optimized in such a way that the stress in the solid state is minimized as far as possible, e.g. by careful multiple application of the solid, by larger line distances and decreasing energies at each crossing.
  • the laser process is preferably carried out as a function of the crystallographic orientation of the substrate, ie the laser modification is particularly preferably as so micro-cracks resulting from the treatment neither hinder the lithography nor run out of the modification plane supercritically and can lead to substrate loss after triggering of the separation tear.
  • the laser modification is particularly preferably as so micro-cracks resulting from the treatment neither hinder the lithography nor run out of the modification plane supercritically and can lead to substrate loss after triggering of the separation tear.
  • first lines can be guided parallel to the preferred crack direction in order to define a crack plane, before in a second step lines in the 90 ° direction finally trigger the cracks and define the parting plane.
  • the implementation of the high-temperature steps prior to the generation of the release plane is highly advantageous, since a significant increase in temperature above 70 ° C is accompanied by an increased mobility of doping atoms, atoms of metallic contaminants and dislocations or other crystal defects.
  • the release plane had been created before the high temperature step or partially generated, then e.g. As a result, micro-cracks continue to extend or grow into the solid or into the solid-state layer to be separated, as a result of which more material would have to be removed and thus greater losses would occur.
  • the at least one high-temperature method is an epitaxy method, a doping method or a method in which plasma is used.
  • High-temperature processes are understood to be all processes, in particular material-depositing processes, which are carried out at a temperature above 70 ° C. The temperature occurring is preferably less than 2000 ° C or less than the melting or evaporation temperature of the solid state material.
  • the high-temperature method preferably creates a multilayered arrangement of solid-state material and of the one or at least one produced or arranged layer.
  • the high-temperature process produces at least one layer on the solid, the at least one layer produced having predefined parameters, at least one predefined parameter having a maximum degree of refraction and / or absorption and / or reflection and / or or charge carrier generation by photoelectric effect of laser light waves, wherein the degree of refraction and / or absorption and / or reflection and / or charge carrier generation by photoelectric effect below 5% and preferably below 1% and particularly preferably below 0.1%.
  • This embodiment is advantageous because interactions of all metallic elements of the circuit with laser light are prevented. As a result of interactions between a metal layer or metallic components and laser light or laser radiation, the metal layer and / or the components, in particular electrical line connections, may be damaged.
  • this embodiment solves the further problem that when introducing the laser plane, if already metallic structures or components (for example greater than 20 nm longitudinal extension or extension in the laser penetration direction) are arranged or generated on the substrate, the laser process being triggered either by back reflections on the structures or is disturbed by the structures themselves, since, for example, the transmission is not ideal. Since a multiphoton process is preferably used for producing the material modifications, the focus in the material must preferably be very precise, in particular ideal, in order to enable the required high intensities with wave fronts that are as undisturbed as possible. Thus, this advantage also speaks for a laser treatment prior to the processing or production of the final structures, in particular layers and / or components.
  • the modifications are preferably produced by means of a multiphoton excitation, in particular a two-photon excitation, in accordance with a further preferred embodiment of the present invention.
  • a multiplicity of basic modifications is first of all generated on an at least partially homogeneously extending, in particular curved, line, in particular in the homogeneously extending section.
  • These basic modifications are preferably generated with or depending on predefined process parameters.
  • the predefined process parameters preferably include at least the pulse duration, pulse energy, pulse distance within a line, distance of the lines from each other, depth and / or numerical aperture.
  • at least one value of these process parameters and preferably a plurality of values or all values of these process parameters or more than two values of these process parameters are determined as a function of the crystal lattice stability of the solid. The value so is particularly preferably chosen so that the crystal lattice remains intact around the respective base modifications, i. preferably less than 20 ⁇ or less than ⁇ ⁇ or less than 5 ⁇ or less than 1 ⁇ einreisst.
  • the laser radiation is in accordance with another preferred embodiment of the present invention with pulse lengths of less than 5ns or less than 2ns, in particular less than 1 ns or less than 700ps or less than 500ps or less than 400ps or less than 300ps or less than 200ps, or less than 150ps, or less than 100ps, or less than 50ps, or less than 10ps.
  • changes in the material properties or modifications are respectively generated with laser pulses which are shorter than 5 ns, in particular shorter than 2 ns or 1 ns.
  • the duration of the individual laser pulses is between 50ps and 4000ps or between 50ps and 2000ps or between 50ps and 1000ps, more preferably between 50ps and 900ps or between 50ps and 700ps or between 50ps and 500ps or between 50ps and 300ps or between 300ps and 900ps or between 500ps and 900ps or between 700ps and 900ps or between 300ps and 500ps or between 500ps and 700ps or between 300ps and 700ps or shorter than 900ps or shorter than 700ps or shorter than 500ps or shorter than 300ps or shorter than 100ps or shorter than 50ps.
  • the laser radiation is generated according to a further preferred embodiment of the present invention with pulse energies, the pulse energies being between 100 nJ and 1 mJ or 500 nJ and 100 or 1 and 50.
  • the pulse energy per single shot is preferably 0.1 to 50 after the objective or after the last optical treatment agent and before the penetration of the laser radiation into the solid. Should e.g. By means of a DOE several foci are generated, the laser radiation associated with each individual focus has a pulse energy of 0.1-50 ⁇ after the objective or after the last optical treatment means and before the penetration of the laser radiation into the solid.
  • the laser radiation with a pulse density between 0.1 ⁇ / ⁇ 2 and 10000 ⁇ / for defined temperature control or for generating the modification or for modifying, in particular, a material property of the donor sub-start ⁇ 2 preferably between 1 nJ ⁇ m2 and 1000 ⁇ / ⁇ 2 and more preferably between 3nJ ⁇ m2 and 200 ⁇ / ⁇ 2 introduced into the solid.
  • trigger modification for triggering subcritical cracks is generated, wherein at least one process parameter for generating the trigger modifications is different from at least one process parameter for generating the base modifications, preferably, multiple process parameters are different from each other. Additionally or alternatively, the trigger modifications may be generated in a direction that is inclined or spaced from the direction of travel of the line along which the base modifications are generated.
  • the subcritical cracks in particular those produced by trigger modifications and / or modifications which define the release region or the tear-off plane or modifications which form by a linear shape, preferably spread according to the invention less than 5 mm, in particular less than 3 mm or less than 1 mm or less than 0 5mm or less than 0.25mm or less than 0.1mm.
  • An inclined orientation In this case, for example, it may correspond to an angle between 0 ° and 90 °, preferably an angle between 85 ° and 90 ° and particularly preferably an angle of 90 °.
  • Example pattern SiC - with fs pulses Pulse energy about 800nJ, pulse spacing 50nm and greater, to 200nm, line pattern as follows: 30 lines with 1 ⁇ distance, then 20 ⁇ gap, then again 30 lines, then 96 ⁇ gap and then from the front, crossed with 30 lines, 20 ⁇ gap and 30 lines (always with 1 ⁇ distance between the lines), then 300 ⁇ gap and then again 30/20/30-line block. Depth ⁇ ⁇ , doping degree of SiC (characterized by sheet resistance> 21 mOhm cm), pulse length 400fs, numerical aperture 0.65.
  • the solid-state material is silicon, the numerical aperture being between 0.5 and 0.8, in particular 0.65, and the irradiation depth between 150 .mu.m and .OMEGA.
  • the pulse spacing is between 1 .mu.m. and ⁇ , in particular at 2 ⁇ " ⁇ , is the line spacing between 1 ⁇ and ⁇ , especially at 2 ⁇ , is the pulse duration between 50ns and 400ns, especially at 300ns, and the pulse energy between 3 ⁇ and 30 ⁇ , especially at 10 ⁇ , lies.
  • the solid-state material is SiC, wherein the numerical aperture lies between 0.4 and 0.8, in particular at 0.4, the irradiation depth between 50 ⁇ m and ⁇ , in particular at ⁇ ⁇ , the pulse spacing is between 0.1 ⁇ and 3 ⁇ " ⁇ , especially at ⁇ ⁇ , is the line spacing between 10 ⁇ and ⁇ ⁇ , especially at 75 ⁇ , the pulse duration between 100fs and 10ns, especially at 3ns, and the pulse energy between 0.5 ⁇ and 30 ⁇ , in particular at 7 ⁇ , lies.
  • Example pattern Sapphire 3-fold written lines at 0 °, 45 °, 90 °, each with ⁇ , ⁇ line spacing, pulse spacing 300nm, pulse energy in the first pass 350nJ, in the second pass 300nJ and in the third pass 250nJ, with a NA of 0.65 and a pulse duration from 250fs.
  • the line distances in particular the linear shapes, preferably between 5 ⁇ and 200 ⁇ , in particular between 10 ⁇ and 100 ⁇ , in particular between 40 ⁇ and 80 ⁇ , in particular between 60 ⁇ and 80 ⁇ , in particular at 70 ⁇ or exactly 70 ⁇ or 70 ⁇ +/- 10 ⁇ or +/- 8 ⁇ or +/- 6 ⁇ or +/- 5 ⁇ m or +/- 4 ⁇ m or +/- 3 ⁇ m or + 1-2 ⁇ or +/- 1 ⁇ , or in particular at 75 ⁇ or exactly 75 microns or 75 ⁇ or +/- 10 ⁇ or +/- 8 ⁇ or +/- 6 microns or +/- 5 microns or +/- 4 microns or +/- 3 microns or + 1-2 ⁇ or +/- 1 ⁇ .
  • the distance between two directly adjacent modifications of a linear shape is preferably 10 ⁇ or exactly 10 ⁇ or 10 ⁇ +/- 8 ⁇ or +/- 6 ⁇ or + 1-5 microns or +/- 4 microns or +/- 3 ⁇ or + 1-2 microns or +/- 1 ⁇ .
  • the laser beams for generating the modifications prior to penetration into the solid penetrate an optic having a numerical aperture (NA) of at least 0.35, in particular of at least or exactly 0.6 or of at least or exactly 0 , 75 or of at least or exactly 0.8 or of at least or exactly 0.85 or of at least or exactly 0.9 or of at least or exactly 0.95.
  • NA numerical aperture
  • the surface roughness decreases with shorter pulses, with femtosecond pulses one can produce better surfaces (roughnesses below 3 ⁇ " ⁇ ) than with nanosecond pulses (more than 3 ⁇ " ⁇ ), but the process is more expensive and takes longer.
  • Picosecond pulses represent a middle ground.
  • phase transformation takes place athermic, ie coupling between the laser pulse and the crystal lattice, so that fewer oscillations (phonons) are excited - the process thus runs cooler overall.
  • phase transformation phase transformation
  • the subcritical cracks spread between 5 ⁇ and 200 ⁇ " ⁇ , in particular between 10 ⁇ and 100 ⁇ or between 10 ⁇ and 50 ⁇ or between 10 ⁇ and 30 ⁇ or between 20 ⁇ and 100 ⁇ or between 20 ⁇ and 50 ⁇ or between 20 ⁇ and 30 ⁇ " ⁇ , in the solid state
  • This embodiment is advantageous because a smaller crack propagation requires less post-processing overhead
  • the portions between the regions of several lines in which the subcritical cracks have spread break as a result of the stresses or the introduction of external force, e.g. generated by the glass transition or the ultrasonic treatment.
  • This embodiment is advantageous because, due to the previously caused prior damage inside the solid, in particular due to the subcritical cracks, the required voltages can be significantly lower. Furthermore, the crack is guided very precisely.
  • the receiving layer is disposed on or generated on a surface of the solid opposite the surface of the solid on which the layers and / or components for forming the composite structure are disposed.
  • the receiving layer according to the invention in particular in the form of a polymer film, is applied on the side of the solid on which preferably no further layer and / or components are arranged.
  • a polymer material is disposed on the main surface.
  • the polymer material preferably has a glass transition temperature of less than 20 ° C., in particular less than 10 ° C. or less than 0 ° C.
  • the polymer material is particularly preferably cooled to a temperature below the glass transition temperature, wherein the glass transition results in mechanical stresses in the donor substrate are generated, wherein the mechanical stresses the subcritical cracks are joined together, whereby the solid state layer is detached from the donor substrate.
  • the separation of the solid state layer of the solid body takes place in such a way that the solid body is weakened in the crack guide area by the modifications such that the solid state layer separates from the solid as a result of material removal or after the removal of material a number of modifications is produced such that the solid state in the Is weakened crack guide region such that the solid state layer separates from the solid or a voltage generating layer is generated or arranged on a tilted to the circumferential surface, in particular flat, surface of the solid and generated by thermal loading of the voltage generating layer mechanical stresses in the solid, wherein the mechanical stresses cause a crack to separate a solid layer which, starting from the surface of the solid exposed by the material removal, follows the modification NEN spreads or the solid after the generation of the modifications thermally acted upon, in particular cooled, and as a result of the thermal loading, the solid state layer separates from the solid body along the crack guide area.
  • the step of arranging or forming a receiving layer on the solid preferably has the features that the receiving layer comprises or consists of a polymer material, in particular polydimethylsiloxane or an elastomer or an epoxy resin or a combination thereof, and the polymer material as a result of thermal loading Recording layer for, in particular mechanical, generating crack propagation stresses in the solid undergoes a glass transition, wherein propagates through the crack propagation stresses a crack in the solid body along the crack guide region.
  • the receiving layer comprises or consists of a polymer material, in particular polydimethylsiloxane or an elastomer or an epoxy resin or a combination thereof, and the polymer material as a result of thermal loading Recording layer for, in particular mechanical, generating crack propagation stresses in the solid undergoes a glass transition, wherein propagates through the crack propagation stresses a crack in the solid body along the crack guide region.
  • the receiving layer according to a further preferred embodiment of the present invention consists massively at least predominantly and preferably completely of the polymer material, wherein the glass transition of the polymer material is between -130 ° C and 0 ° C, in particular between -85 ° C and -10 ° C or between 80 ° C and -20 ° C or between -65 ° C and -40 ° C or between -60 ° C and -50 ° C.
  • the polymeric material of the receiving layer is or consists of a polymer hybrid material forming a polymer matrix having a filler in the polymer matrix, the polymer matrix preferably being a polydimethylsiloxane matrix and wherein the mass fraction of the polymer matrix on the polymer hybrid material is preferably 80% to 99% and particularly preferably 90% to 99%.
  • a polymer hybrid material is specified for use in a splitting method in which at least two solid sections are produced from a solid starting material.
  • the polymer hybrid material according to the invention comprises a polymer matrix and at least one first filler embedded therein.
  • the filler may comprise a mixture of different materials, e.g. As metal oxides, metal particles and inorganic fibers.
  • the polymer matrix may be formed as an elastomer matrix, preferably as a polydiorganosiloxane matrix, particularly preferably as a polydimethylsiloxane matrix.
  • elastomer matrix preferably as a polydiorganosiloxane matrix, particularly preferably as a polydimethylsiloxane matrix.
  • Such polymer materials are particularly easy to use as a matrix material in combination with fillers, since the properties can be flexibly adjusted due to the variable degree of crosslinking and adapted to the respective filler and the solid-state starting material to be divided.
  • the mass fraction of the polymer matrix on the polymer-hybrid material is 80% to 99%, 10 preferably 90% to 99%.
  • the first filler may be of organic or inorganic nature and consist of both a chemical element and a chemical compound or a mixture of substances, for example an alloy.
  • the first filler is designed to act as a reactant, initiator, catalyst, or promoter during debonding of the polymer hybrid material from the solid portion after division, and thereby to faster release of the polymer as compared to a polymeric material without a first filler Hybrid material from the solid section after the division leads.
  • the specific chemical composition and configuration of the first filler and its mass fraction is dependent in particular on the specific material of the polymer matrix, which is to be detached, the solvent used for this and the reactants used. Furthermore, the material of the solid state starting material and the dimensions of the solid state starting material to be divided also play a role.
  • the concrete proportion of the first filler in the polymer matrix is highly dependent on the material of the filler and its mode of action. On the one hand, despite its filler, the polymer matrix must be able to do justice to its task of generating stresses. To the others, the proportion of the first filler must be high enough to achieve the desired effect on polymer removal.
  • the respective optimum mass fraction of the first filler can be determined by the person skilled in the art within the scope of simple experiments carried out in a concentration-dependent manner.
  • a further filler such as fumed silica contribute in the form of an inorganic network in the polymer.
  • fumed silica contribute in the form of an inorganic network in the polymer.
  • less strong interactions can contribute to the improvement through purely hydrodynamic enhancements.
  • a targeted increase in viscosity should be mentioned, which enables improved processing in the splitting method and thus can contribute to improved manufacturing tolerances.
  • the first filler in a polymer hybrid material is used to accelerate the detachment of the polymer hybrid material from a solid part divided by division by means of a splitting method in which a solid starting material is divided into at least two solid sections. is used.
  • the first filler may be distributed in the polymer matrix such that the mass fraction of the first filler in the direction of the outer, ie lower, interface of the polymer hybrid material, which is connected to the solid state starting material during the splitting process decreases parallel to the lower interface arranged further interface of the polymer hybrid material decreases. This means that the mass fraction of the filler near the solid state starting material or section is greater than in the other regions of the polymer hybrid material. This distribution of the first filler allows a particularly effective removal of the polymer hybrid material after the separation, since the first filler is close to the interface with the solid section and can exert its effect there.
  • the remaining areas of the polymer-hybrid material have less or no proportions of the first filler, so that the function of the polymer is influenced as little as possible.
  • the polymer hybrid material is layered, wherein only one of the solid state starting material facing layer has the first filler, while the remaining polymer hybrid material is free of the first filler.
  • a lower portion of the polymer hybrid material adjacent to its lower interface may be free of the first filler.
  • a range sequence may result as follows: Adjacent to the solid state starting material there is first an area without first filler, followed by an area with a high proportion of first filler and then an area with a low proportion of first filler or without first filler.
  • the region extends predominantly parallel to the interface of the solid state starting material to which the polymer hybrid material is applied and has a longitudinal and transverse extent at least in the region of this interface.
  • a lower region without a first filler may be provided in particular in the event that the first filler deteriorates the adhesion of the polymer hybrid material to the solid state starting material. To avoid this, an area without a first filler is first arranged, followed by an area with a high proportion of the first filler, so that the first filler can fulfill its function.
  • a lower layer without a first filler may, for example, have a thickness of between 10 ⁇ m and 500 ⁇ m, for example 100 ⁇ m.
  • an upper portion of the polymer hybrid material adjacent to its upper interface may be free of the first filler.
  • the upper interface is meant the interface which confines the polymer-hybrid material opposite the lower interface and the solid state starting material to the environment.
  • Lower and upper interfaces can be arranged parallel to each other.
  • Such an upper region without a first filler can be provided in particular if the first filler adversely affects the heat transfer between the environment and the polymer hybrid material, for example if the cooling of the polymer hybrid material were to be delayed.
  • the first filler may comprise or consist of a material capable of reacting with a reactant, preferably an oxidant, to release a gaseous product.
  • cavities can be generated in the polymer matrix which allow for faster access of the reactants and solvents to the polymer matrix and any existing polymer Allow sacrificial layer and also cause a faster removal of educts and dissolved components.
  • the cavity density can be selectively influenced in the boundary region between the solid body section and the polymer hybrid material or between the sacrificial layer and the polymer hybrid material.
  • the first filler may comprise a metal, in particular aluminum, iron, zinc and / or copper or consist of a metal, in particular the aforementioned metals.
  • Consisting of includes all materials referred to herein that may contain technologically-caused impurities or technologically-caused admixtures, which are useful, for example, for the preparation of the fillers and their distribution or attachment to the polymer matrix.
  • Metallic fillers may be treated with oxidizing agents, e.g. Hydrochloric acid, nitric acid, citric acid, formic acid or sulfamic acid react to release a gaseous product and thereby be removed from the polymer hybrid material.
  • oxidizing agents e.g. Hydrochloric acid, nitric acid, citric acid, formic acid or sulfamic acid react to release a gaseous product and thereby be removed from the polymer hybrid material.
  • the reaction of zinc as a filler by reaction with concentrated hydrochloric acid leads to the formation of 5 additional cavities: Zn + 2 HCl -> ZnC + H2
  • the generation of hydrogen introduces additional driving forces which are the removal of the polymer
  • the first filler may improve the thermal conductivity within the polymer hybrid material, for example, by having the first filler having a higher thermal conductivity than the polymer of the polymer matrix. This may be the case, for example.
  • Another advantage in the case where the first filler comprises a metal is the improved thermal diffusivity within the polymer hybrid material. As a result of an improved thermal diffusivity, the stresses generated by the cooling of the solid state starting material can be more effective, ie be faster and with less consumption of coolant, be generated. Increasing this can increase the overall yield of the splitting process.
  • a second filler can be provided in the polymer hybrid material which increases the adhesion of the polymer hybrid material on the solid state starting material compared to a polymer hybrid material without a second filler.
  • the adhesion is increased compared to a polymer material without filler.
  • the second filler may be a filler that can be activated by plasma.
  • Plasma activation results in new surface species that can be made to interact more strongly with the surface of the solid starting material and, as a result, improve the adhesion of the polymer hybrid material.
  • the type of surface species achievable by the plasma treatment is primarily dependent on the process control of the plasma process.
  • gases such as nitrogen, oxygen, silanes or chlorosilanes can be added, so that, for example, polar groups are formed which can interact more strongly with the surface of the solid starting material.
  • the second filler may be distributed in the polymer matrix 15 such that the mass fraction of the second filler increases toward the lower interface.
  • the polymer-hybrid material may contain the second filler only in a region adjacent to the lower interface, which region may also be formed as a layer in the sense of the above definition.
  • the second filler may comprise core-shell polymer particles or core-shell polymer particles.
  • Examples of these are core-shell particles comprising a polysiloxane core with an acrylate shell or comprising a nanoscale silicate core with an epoxy shell or comprising a rubber particle core with an epoxy shell or comprising a nitrile rubber particle core with an epoxide -Bowl.
  • the second filler can by means of Low-temperature plasma, eg cold plasma, be activated.
  • the plasma can be generated by means of dielectric barrier discharge (DBE).
  • DBE dielectric barrier discharge
  • electron densities in the range of 1014 to 1016 m-3 can be generated.
  • the average temperature of DBE-generated "cold" non-equilibrium plasma (plasma volume) is about 300 ⁇ 40K at ambient pressure
  • the average temperature of DBE-generated nonthermal plasma is about 70 ° C at ambient pressure.
  • the surface is subjected to uni- or bipolar pulses with pulse durations from a few microseconds to a few tens of nanoseconds and amplitudes in the single-digit to double-digit kilovolt range.
  • no metallic electrodes in the discharge space and thus no metallic impurities or electrode wear are to be expected.
  • Dielectric surfaces can be modified at low temperatures and chemically activated.
  • the surface modification can be carried out, for example, by an interaction and reaction of the surface species by ion bombardment.
  • the second filler may further be activated by means of corona D5 treatment, flame treatment, fluorination, ozonation or UV treatment or eximer irradiation.
  • the polymer hybrid material may further comprise a third filler as compared to a polymer hybrid material having a first or to a polymer hybrid material having a first and a second filler.
  • This third filler has a higher thermal conductivity and / or a higher modulus of elasticity compared to the polymer of the polymer matrix.
  • the modulus of elasticity of the polymer at low temperature conditions is in the lower single-digit gigapascal range (about 1 -3 GPa), while, for example, metallic fillers have an E-modulus in the two-digit to three-digit gigapascal range.
  • a percolating filler network is possible, which enables improved "force coupling" into the solid state starting material.
  • the percolation is significantly influenced by the volumetric fill level of the respective fillers (eg 0.1% by volume, 1% D30% by volume to 10% by volume depending on the aspect ratio).
  • the viscoelastic layer structure of the polymer structure can be immersed and several percolation paths become effective.
  • improved heat transfer can be made possible because it can lead to improved contact of the fillers with the surface of the solid state starting material.
  • the mechanical stability of the polymer hybrid material is achieved faster even at low temperatures. In sum, there is a lower standard deviation of the corresponding structural property profiles such.
  • the spatially resolved property profile changes (stress peaks in the polymer-hybrid material) and thus in the solid state are smaller, which leads to a higher overall yield of the splitting process and a better quality of the solid sections produced.
  • the third filler can provide improved heat transfer between the environment and polymer hybrid material and faster thermal conduction within the polymer hybrid material, so that the polymer hybrid material can be cooled faster and the splitting process performed faster overall and thus more effectively can be.
  • the third filler can also be used to influence the thermal expansion coefficient.
  • the aim is to maximize the difference between the coefficients of thermal expansion of the polymer hybrid material and the solid state starting material to be divided in order to generate additional stresses necessary for the division.
  • the third filler has a high thermal expansion coefficient, d. H. an expansion coefficient higher than that of the polymer matrix.
  • the thermal expansion coefficient of the third filler may be more than 300 ppm / K.
  • the third filler may be distributed in the polymer matrix such that the mass fraction of the third filler increases toward the upper interface to allow faster heat transfer, particularly at the interface to the environment.
  • the third filler may comprise a metal, in particular aluminum, iron, zinc and / or copper, or consist of one of the metals mentioned. Metals are generally characterized by high thermal conductivity and thermal conductivity.
  • the described fillers may be distributed in particulate form in the polymer matrix, wherein the particle size may be in the ⁇ and nm range, based on at least one dimension of the particle.
  • the filler particles can also assume other configurations, for example a rod-shaped or disc-shaped form.
  • the filler particles can have all particle size distributions, for example monomodal or bimodal, narrow, in particular monodisperse, or broad.
  • the fillers can be attached to the polymer matrix both physically, e.g. B. by embedding in the polymer network, as well as be chemically attached.
  • one or more of the fillers described may comprise or consist of inorganic or organic fibers, for example carbon, glass, basalt or aramid fibers, provided that the functions described above are compatible therewith.
  • another filler may be added comprising or consisting of said fibers.
  • Fibers usually have strongly anisotropic properties.
  • By a direction-dependent positioning of the filler in the polymer-hybrid material there is the possibility of a targeted influencing the necessary for the division of the solid state starting material voltages. This can help increase the overall yield of the splitting process.
  • An additional advantage, in the case where a inorganic or inorganic filler is used as a pulp having a highly anisotropic structure, is that it can achieve an improvement in the mechanical properties within the polymer hybrid material.
  • the described fillers may also comprise or consist of core-shell particles. Additionally or alternatively, a further filler may be provided comprising or consisting of core-shell particles in the polymer hybrid material.
  • core-shell polymer particles in addition to an improved activatability also allows a new design of energy-absorbing mechanisms, which in total to an impact and fracture toughness increase, in particular an increase in the low-temperature impact strength of the polymer hybrid material when used in splitting Method and thus can also contribute to a higher overall yield of the splitting method. For example, a mechanical destruction of a film of a polymer hybrid material with a lower Probability occur, so that the possibility of reuse of the film can be favored.
  • Core-shell particles are characterized by the fact that a generally spherical core of a material is surrounded by a shell of a second material.
  • the shell can either completely encase the core or be permeable.
  • the materials may be both inorganic materials, such as. As metals, or organic materials such.
  • As polymers act. For example, two different metals can be combined with each other. But it is also possible to surround a core of a polymer with a shell of a metal or a second polymer.
  • Core-shell particles allow the combination of the properties of the first and second materials. For example, via an inexpensive polymer core the
  • Particle size distribution also allows the properties of the core-shell particles to be accurately predicted and adjusted.
  • one or more fillers may be carbon in the form of carbon black, graphite, chopped carbon fibers, carbon nanofibers, preferably in the form of carbon nanotubes.
  • carbon nanotubes, CNT such as multi-walled carbon nanotubes (MWCNT) as well as single-walled carbon nanotubes (SWCNT).
  • MWCNT multi-walled carbon nanotubes
  • SWCNT single-walled carbon nanotubes
  • the third filler may comprise or consist of MWCNTs, since they have a particularly high thermal conductivity (> 3000 W * (m * K) "1 ) and at the same time have a very high tear strength in the range of 5-60 GPa High mechanical stability is reflected in high tear values, extreme elasticity and a very good durability of the filler.
  • SWCNT modulus of elasticity: 410 GPa to 4150 GPa vs. graphite: 1000 GPa, SWCNT: thermal conductivity about 6000 W * (m * K) "1 ).
  • Cost ratio compared to MWCNT The cylinder diameters of MWCNT are typically in the range of 1 nm to 100 nm, preferably from 5 to 50 nm, with a length of 500 nm to 1000 ⁇ .
  • the third filler may comprise MWCNT and at the same time the second and / or first filler may comprise or consist of carbon black, since here likewise an improvement of the thermal conductivity (eg up to 200 W * (m * K) "1 ) Since the use of exemplary carbon black has a significantly lower tear resistance with values of ⁇ 0.4 GPa, a combination of both or further fillers is possible and can lead to an improvement in the overall split yield and to an improvement in the overall costs in the splitting process leads.
  • the thermal conductivity eg up to 200 W * (m * K) "1
  • the fillers may comprise or consist of silica, for example fumed silica.
  • a further filler comprising or consisting of silicic acid may be provided in the polymer hybrid material.
  • Pyrogenic silica can form a three-dimensional network and thereby contribute to the improvement of mechanical stability.
  • a filler can serve to selectively adjust the mechanical properties of the polymer hybrid material.
  • One or more of the said fillers may be of the same material, as long as this is compatible with the function attributed to them.
  • both the first and the third filler comprise aluminum or consist of aluminum.
  • aluminum can be used both to generate cavities and thus to accelerate the detachment of the polymer hybrid material from the solid body section and also to increase the Temperature conductivity. Such a configuration simplifies the manufacturing process, since it may be sufficient to add only one or two fillers to perform all functions.
  • First and second and possibly third filler can also consist of different materials. This allows an individual and thus better adaptation of the filler to the desired function.
  • a film of the invention comprises a polymer hybrid material as described above.
  • the film may have a thickness of, for example, 0.5 to 5 mm.
  • An inventive polymer hybrid material or a film according to the invention is applied to at least this surface so that a corresponding composite structure results.
  • the applied polymer-hybrid material or the applied film are also referred to below as recording layer.
  • the thickness of such a receiving layer can be, for example, between 0.5 mm and 5 mm, in particular between 1 mm and 3 mm.
  • the polymer hybrid material or the film can also be applied to a plurality of exposed surfaces, in particular to surfaces arranged parallel to one another.
  • the thermal exposure preferably means that the receiving layer is cooled below the ambient temperature and preferably below 10 ° C and more preferably below 0 ° C and more preferably below -10 ° C or below -40 ° C.
  • the cooling of the receiving layer is most preferably carried out such that at least a portion of the receiving layer performs a glass transition or undergoes a partial or complete crystallization.
  • the cooling can be a cooling to below -130 ° C, the z. B. by means of liquid nitrogen is effected.
  • This embodiment is advantageous because the receiving layer contracts as a function of the temperature change and / or undergoes a glass transition and the resulting forces are transferred to the solid state starting material, whereby mechanical stresses can be generated in the solid, which trigger a crack and / or or crack propagation, wherein the crack first propagates along the first release plane to cleave the solid layer.
  • the polymer-hybrid material or the film is removed from the solid-state section, for example by a chemical reaction, a physical detachment process and / or mechanical removal.
  • the detachment process of the polymer hybrid material from the solid section can at moderate ambient temperature, for. B. in the range of 20 ° C to 30 ° C, preferably in the higher temperature range of 30 ° C to 95 ° C, z. B. from 50 ° C to 90 ° C, or for example in a lower temperature range between 1 ° C and 19 ° C.
  • the elevated temperature range may allow for shortening of a chemical release reaction due to an increase in the reaction rate, e.g. Example, in the case of using a sacrificial layer between the polymer hybrid material and the solid.
  • the detachment may take place in aqueous solution, advantageously at a pH in the range 2-6.
  • the dissolution process may take the form of a treatment with a solution of a suitable apolar solvent, for example Ambient temperatures in the range of 1 ° C to 50 ° C are preferred and from 20 ° C to 40 ° C are particularly preferred.
  • a particular advantage here is the detachment without a temperature effect on the film.
  • This can advantageously aliphatic and aromatic hydrocarbons such.
  • As carbon tetrachloride, are applied.
  • additional forces can be introduced into the polymer hybrid material to be detached and the boundary surface to the solid body section, since a solvent treatment can cause a very strong reversible swelling of the polymer-hybrids material, whereby the detachment is simplified as a whole.
  • a combination with the above-described detachment mechanism of the sacrificial layer and the treatment with a suitable non-polar solvent can be carried out - also without affecting the temperature of the film.
  • a stabilizing layer for limiting deformation of the exposed layer or components may be disposed or created on the exposed layer or exposed components of the resulting composite structure, the deformations resulting from the mechanical stresses introduced by the receptacle layer.
  • the side with components is thus preferably protected and held (eg against warping of the substrate or the solid and gray space conditions). This can be done via soluble polymers (organics) or holding layers.
  • This embodiment is advantageous because it limits interaction with, for example, small feature structures.
  • the surface finish of a wafer-finished wafer is usually not regular, which can lead to field swell and local surface damage due to excessive or abrupt movement.
  • this embodiment represents a solution that provides good protection of Solid state layer and disposed thereon and / or generated layers and / or components, in particular against mechanical damage or destruction, causes.
  • the method may also preferably or alternatively comprise one or more of the steps: providing a solid for separating at least one solid layer, the solid having a first planar area portion and a second planar area portion, wherein the first planar area portion preferably substantially or exactly parallel to the second planar surface portion is aligned.
  • the stabilizing layer comprises or has a preferably water-soluble ceramic, in particular Fortafix from Detakta, and / or a soluble polymer, in particular poly (ethylene glycol) (PEG), in particular with different and / or adapted chain lengths ,
  • Fortafix is a one- and two-component ceramic cement for use as an adhesive, glaze to protect against corrosion and chemical attack, casting compound for mold making or insulation, as a dip for fixing heating wires, for inserting knife blades, eg in metal or ceramic handles.
  • the polymer (PEG) is soluble in water and a range of organic solvents.
  • the surface structures / components can be filled with PEG before a protective layer is applied.
  • the stabilization layer is preferably produced in situ or provided as a film. Additionally or alternatively, the stabilizing layer is poured in or the layer and / or the exposed components are charged with liquid material, which only becomes the stabilization layer by hardening or hardening. The stabilizing layer is additionally or alternatively removed by applying a solvent or by immersion in a solvent from the layer or the exposed components.
  • the stabilization layer thus comprises or consists of a ceramic material and / or comprises or consists of a polymeric material.
  • the modifications are produced successively in at least one row or row or line, wherein the modifications produced in a row or row or line are preferably generated at a distance X and height H so that a between two successive modifications propagating crack, in particular in the crystal lattice direction propagating crack, the crack propagation direction is aligned at an angle W opposite the release plane, which connects the two modifications together.
  • the angle W is in this case preferably between 0 ° and 6 °, in particular at 4 °.
  • the crack propagates from a region below the center of a first modification toward a region above the center of a second modification.
  • the essential context here is that the size of the modification can or must be changed depending on the distance of the modifications and the angle W.
  • the modifications are produced on a line and preferably at the same distance from each other. Furthermore, it is conceivable that a plurality of these generated in the first step lines are generated. These first lines are particularly preferably generated parallel to the crack propagation direction preferably in a straight line or circular arc shape, in particular in the same plane.
  • second lines are preferably generated for triggering and / or driving preferably subcritical cracks. These second lines are also preferably generated in a straight line. Particularly preferably, the second lines are inclined relative to the first lines, in particular oriented orthogonally. The second lines preferably extend in the same plane as the first lines, or more preferably in a plane which is parallel to the plane in which the first lines extend.
  • third lines are preferably generated to connect the subcritical cracks generated.
  • a cooling device for cooling the recording layer to a temperature between -130 ° C and -10 ° C, in particular to a temperature between -80 ° C and -50 ° C.
  • the cooling device preferably has a misting agent, in particular at least or exactly one perforated pipe, for atomizing liquid nitrogen, and the cooling effect is particularly preferably produced by atomized nitrogen.
  • the cooling device has a nitrogen bath, wherein the recording layer is positioned at a distance from liquid nitrogen stored in the nitrogen bath.
  • the cooling device may be provided with a spray, in particular liquid or fog-like, nitrogen, preferably uniformly providing spraying means, wherein the spraying means preferably above and / or laterally of the receiving layer is arranged.
  • a spray in particular liquid or fog-like, nitrogen, preferably uniformly providing spraying means, wherein the spraying means preferably above and / or laterally of the receiving layer is arranged.
  • This embodiment is advantageous because the liquid nitrogen is very well suited for the defined cooling of objects. Further, this embodiment is advantageous because a much more energy efficient process is provided over low temperature processes of less than -80 ° C or less than -90 ° C.
  • the cooling device preferably has a nitrogen bath and a positioning device for defined setting of the distance of the position of the receiving layer to the liquid nitrogen held in the nitrogen bath, wherein the nitrogen bath and the positioning device are preferably arranged in a space which is at least partially and preferably completely demarcated from the environment.
  • One or more temperature sensing devices are provided in accordance with another preferred embodiment of the present invention.
  • the temperature measuring device (s) and temperature measurement (s) are preferably carried out, the detected temperature values preferably being used to control the position or the flow through a nitrogen valve for temperature control.
  • a fan can also be used in the chamber interior, which generates a forced convection and thus reduces temperature gradients.
  • Another, not shown, possibility of cooling is the contact cooling with a tempered heat sink, which is traversed for example by a coolant in a closed circuit and is brought into contact with the solid.
  • the temperature measurement is preferably carried out on the solid, in particular on the receiving layer and / or on the underside of the solid, preferably the solid bottom is arranged spaced from the chamber bottom, wherein for positioning of the solid preferably a positioning device is provided, by means of which particularly preferably the distance of the solid to the chamber bottom or the distance of the receiving layer to the liquid nitrogen, in particular temperature-dependent, is variable.
  • a chamber for receiving the nitrogen and the positioning device is preferably provided, wherein the chamber is preferably closable and / or thermally insulated from the environment.
  • a solid-state starting material is preferably understood to be a monocrystalline, polycrystalline or amorphous material. Monocrystallines having a strongly anisotropic structure are preferred because of the strong anisotropic atomic binding forces.
  • the solid state starting material preferably has one Material or a material combination of one of the main groups 3, 4, 5 and / or the subgroup 12 of the Periodic Table of the Elements, in particular a combination of elements of the 3rd, 4th, 5th main group and the subgroup 12, such as zinc oxide or cadmium telluride, on.
  • the semiconductor source material may include, for example, silicon, gallium arsenide GaAs, gallium nitride GaN, silicon carbide SiC, indium phosphide InP, zinc oxide ZnO, aluminum nitride AIN, germanium, gallium (III) oxide Ga 2 C> 3, aluminum oxide Al 2 O 3 (sapphire), gallium phosphide GaP , Indium arsenide InAs, indium nitride InN, aluminum arsenide AlAs or diamond.
  • the solid or the workpiece preferably comprises a material or a combination of materials from one of the main groups 3, 4 and 5 of the Periodic Table of the Elements, such as SiC, Si, SiGe, Ge, GaAs, InP, GaN, Al 2 O 3 ( Sapphire), AIN. Particularly preferably, the solid has a combination of the fourth, third and fifth group of the periodic table occurring elements.
  • Conceivable materials or combinations of materials are eg gallium arsenide, silicon, silicon carbide, etc.
  • the solid may have a ceramic (eg Al 2 O 3 - Alumiumoxid) or consist of a ceramic, preferred ceramics are eg Perovskitkeramiken (such as Pb-, O-, Ti / Zr-containing ceramics) in general and lead magnesium niobates, barium titanate, lithium titanate, yttrium aluminum garnet, in particular yttrium aluminum garnet crystals for solid-state laser applications, surface acoustic wave (SAW) ceramics such as lithium niobate, gallium orthophosphate, Quartz, calcium titanate, etc. in particular.
  • the solid body thus preferably has a semiconductor material or a ceramic material or particularly preferably the solid body consists of at least one semiconductor material or a ceramic material.
  • the solid is preferably an ingot or a wafer.
  • the solid is particularly preferably a material which is at least partially transparent for laser beams. It is therefore still conceivable that the solid body has a transparent material or partially made of a transparent material, such as sapphire, or is made. Further materials which may be used as solid material alone or in combination with another material include "wide band gap" materials, InAISb, high temperature superconductors, in particular rare earth cuprates (eg YBa2Cu3C) the solid body is a photomask, with the photomask material used in the present case preferably any photomask material known from the filing date, and particularly preferably combinations thereof Further, the solid may additionally or alternatively comprise or consist of silicon carbide (SiC). The modifications may be a phase transformation of the solid state material, in particular of silicon carbide in silicon and carbon, whereby a volume expansion is generated in the solid, which in turn generates compressive stresses in the solid state.
  • SiC silicon carbide
  • the laser application according to the invention preferably effects a substance-specific spatially resolved accumulation of the energy input, from which results a defined temperature control of the solid at a defined location or at defined locations as well as in a defined time.
  • the solid may consist of silicon carbide, whereby preferably a strongly localized tempering of the solid to a temperature of e.g. more than 2830 +/- 40 ° C is made. This tempering results in new substances or phases, in particular crystalline and / or amorphous phases, the resulting phases preferably being silicon (silicon) and DLC (diamond-like carbon) phases which are produced with significantly reduced strength. By this strength-reduced layer then gives the separation area or the Ablöseebene.
  • the above-mentioned object is achieved by a solid produced according to a method mentioned above and having at least one release plane inside the solid, the release plane being formed by modification generated by means of laser radiation. Further, the solid has an area resulting from a high-temperature treatment process.
  • the layer / s and / or component / s are arranged or generated at the area.
  • the layer (s) and / or component (s) can be arranged or generated on a surface of the solid state layer to be separated.
  • the solid body preferably has a thickness or average thickness of less than ⁇ ⁇ , in particular less than ⁇ or 700 ⁇ or ⁇ or 500 ⁇ or 400 ⁇ or 300 ⁇ or 200 ⁇ or 10 ⁇ or ⁇ or 50 ⁇ .
  • the invention thus also relates to the production of components on such a pretreated / modified wafer and the modified wafer as a component substrate itself.
  • the present invention additionally or alternatively relates to a multi-component arrangement.
  • the multicomponent arrangement according to the invention is preferably produced by means of a method described in this protective document and particularly preferably has at least one solid layer.
  • the solids layer preferably consists of more than 50% (by weight), in particular more than 75% (by weight) or more than 90% (by weight) or more than 95% (by weight) or more than 98% (by weight) or more than 99% (by mass) of SiC, wherein the solid state layer in the region of a first surface compressive stresses wherein the modifications are amorphized (phase-inverted) constituents of the solid state layer, the modifications being spaced closer to or forming the first surface than to a second surface, the second surface being parallel or substantially parallel to the first surface is, wherein the first surface is flat or substantially planar and / or wherein the second surface is flat or substantially planar.
  • the multi-component arrangement according to the invention likewise has a metal layer produced on the first surface of the solid-state layer. Furthermore, it is possible for one or more further layers and / or one or more further components to be arranged on the second surface, in particular for forming electrical components which can be used as horizontal or vertical components.
  • the production of a composite structure preferably takes place by arranging or producing layers and / or components at or above an initially exposed surface of the solid, wherein the exposed surface forms part of the solid state layer to be separated off.
  • the modifications to form the release plane are created prior to the formation of the composite structure.
  • an external force may be introduced into the solid for generating stresses in the solid, the external force being so strong that the stresses cause crack propagation along the release plane.
  • the modifications are less than 200 ⁇ , in particular less than 150 ⁇ or less than 1 10 ⁇ or less than 100 ⁇ or less than 75 ⁇ or less than 50 ⁇ , spaced from the second surface.
  • a surface is preferably to be regarded as substantially planar if every square centimeter of the surface touches the ideally smooth and ideally flat surface when the surface is in contact with an ideal smooth and ideally flat surface with at least one component.
  • a surface is preferably to be regarded as planar if every square centimeter, in particular square millimeters, of the surface when the surface is in contact with the surface on an ideally smooth and ideally flat surface has at least several, in particular at least 2, 3, 4 or 5 components ideally smooth and ideally flat surface touched.
  • a diffractive optical element is arranged according to a further preferred embodiment of the present invention prior to the penetration of the laser radiation into the donor substrate or into the solid.
  • the laser radiation is split by the DOE onto multiple light paths to produce multiple focuses.
  • the DOE preferably causes a field curvature over a length of 200 ⁇ , which is less than or equal to ⁇ , in particular less than or equal to 30 ⁇ or less than or equal to 10 ⁇ or less than or equal to 5 ⁇ or less than or equal to 3 ⁇ " ⁇ , wherein at least 2 by the DOE and preferably at least or exactly 3 or at least or exactly 4 or at least or exactly 5 or at least or exactly or up to 10 or at least or exactly or up to 20 or at least or exactly or up to 50 or up to 100 foci for changing the material properties of This embodiment is advantageous because significant process acceleration can be achieved.
  • DOEs diffractive optical elements
  • the focus must therefore be adjusted by higher energy and / or by beam shaping.
  • the beam shaping is preferably carried out e.g. via one or more diffractive optical element (s) (DOE), which makes this difference dependent on the
  • laser beams can also be used in all other embodiments disclosed in this document at the Brewster angle or essentially in the Brewster mode. Be irradiated angle.
  • Brewster angle coupling reference is hereby made to the document "Optical Properties of Spin-Coated ⁇ 02 Antireflection Films on Textured Single-Crystalline Silicon Substrates" (Hindawi Publishing Corporation International Journal of Photoenergy, Volume 2015, Article ID 147836, 8 pages, http: This document is incorporated by reference in its entirety into the subject matter of the present patent application.
  • the above-mentioned and incorporated document discloses, in particular, calculations for the optimum angle of incidence for different materials and thus indexes for refraction Energy of the laser or of the laser application device is adjusted not so much as a function of the material, but rather of the possible transmission at a specific angle, ie if the optimum transmission is 93%, for example, these losses must be compared to experiments with perpendicular irradiation and losses of eg
  • the part of the oblique irradiation thus preferably serves to lose less light by surface reflection and to bring more into the depth.
  • a possible downstream problem that can arise in certain constellations is that the depth of focus can be "skewed" and thus the intensities achieved - the key size for multiphoton processing - are again lower, possibly even lower than vertical Irradiation, where all beam components pass through the same optical path in the material, which may then preferably take place through a diffractive optical element or through a plurality of diffractive elements or a continuous wedge or a plurality of continuous wedges - and / or other optical elements - in the beam path, these additional paths and / or the influence on the individual beams - in particular different spherical aberrations over the beam profile - compensate
  • These DOEs can be calculated numerically with suitable software solutions (eg Virtuallab from Lighttrans, Jena) and then manufacture or provide.
  • the present invention preferably additionally or alternatively relates to a method for producing modifications in a solid, wherein the modifications define a crack guide region or a release plane for guiding a crack for separating a solid fraction, in particular a solid layer, from the solid.
  • the method according to the invention preferably comprises at least the steps of: moving the solid body relative to a laser application device or a Laser, successively generating a plurality of laser beams by means of the laser application device for generating at least one modification, the laser application device for the defined focusing of the laser beams and / or for adjusting the laser energy, in particular continuously, in dependence on at least one parameter, in particular of a plurality at parameters, in particular two, at least two or exactly two or more than parameters, is set.
  • a fluid in particular a gas, in particular air
  • a flow behavior of the fluid located between the solid and the laser application device in particular in the region of the radiation profile, is set to prevent accumulation of dust in the region of the laser radiation.
  • the adjustment of the flow behavior is carried out according to a further preferred embodiment of the present invention by supplying a fluid, in particular ionized gas, in the region of the beam path between a lens and the solid or the adjustment of the flow behavior by generating a negative pressure, in particular a vacuum in the range of the beam path between a lens and the solid.
  • the solid has at least one coating or is coated with a coating, the refractive index of which is different from the refractive index of the surface of the solid on which the coating is arranged, or a coating on the solid is generated whose refractive index is different from the refractive index of the surface of the solid on which the coating is arranged.
  • the step of generating modifications in the interior of the solid by means of LAS ER rays of a laser application device preferably takes place, wherein the modifications preferably give the crack guidance region along which a separation of the solid layer from the solid occurs ,
  • the coating is produced or produced according to a further preferred embodiment of the present invention by means of spin coating, wherein the coating comprises nanoparticles, in particular of at least one material selected from the list at least consisting of silicon, silicon carbide, titanium oxide, glass or AI203 having.
  • a plurality of coatings are stacked on top of one another or with their indices of refraction being different from each other.
  • a first coating disposed on or generated on the solid has a greater refractive index than an additional coating the first coating is produced.
  • the coatings are thus preferably selected and produced or arranged such that the refractive index of the respective layer preferably decreases or decreases with the distance between the respective layer and the solid.
  • the refractive index of the solid preferably greater than the refractive index of the first coating and the refractive index of the first coating is preferably greater than the refractive index of the second coating and the refractive index of the second coating preferably greater than the refractive index of the third coating.
  • the steps between the refractive indices may be continuous or discontinuous.
  • the different coatings may have different thicknesses. However, it is conceivable that two or three or more of the coatings have the same thickness.
  • a coating in each case has a thickness in the range between 50-400 nm.
  • the first coating may have a thickness (or average thickness) of 100 nm.
  • the thicknesses of the second coating and the third coating may thus substantially coincide or completely coincide, at least one of the coatings, and preferably both, having a thickness deviating therefrom.
  • the second coating may e.g. have a thickness (or average thickness) of 150nm.
  • the third coating may be thicker or thinner than the first coating and / or as the second coating, e.g. have a thickness (or average thickness) of 75nm, 1 10nm or 300nm.
  • the method according to the invention also preferably comprises the step of removing material from the donor substrate starting from a surface extending in the circumferential direction of the donor substrate in the direction of the center of the donor substrate, in particular for producing a peripheral depression.
  • the removal area is preferably uncovered by the material removal. That is, modifications that define the separation area or a release plane may have been previously generated.
  • the donor substrate passes through in a release area or along a release plane Modifications is weakened such that the solid state layer or solid layer as a result of the removal of material from the donor substrate or generated after the removal of material such a number of modifications that the donor substrate is weakened in the separation area such that the solid state layer separates from the donor substrate or a Voltage generating layer is generated or arranged on a surface inclined to the surrounding surface, in particular flat, surface of the donor substrate and generated by thermal loading of the voltage generating layer mechanical stresses in the donor substrate, wherein the mechanical stresses a crack for separating a solid state arises, starting from the exposed by the material removal surface of the donor substrate propagates along the modifications.
  • the release region predetermined by the modifications is, in accordance with a further preferred embodiment of the present invention, spaced further from the material removal to the circumferential surface of the donor substrate than after the material removal.
  • This embodiment is advantageous because the release region is thus easy to produce and yet, after the removal of material, preferably adjoins the outer peripheral surface of the donor substrate.
  • the modifications for predetermining the detachment area are produced according to a further preferred embodiment of the present invention prior to the removal of material and at least in places a reduction of the distance of the detachment area to less than 10 mm, in particular to less than 5 mm and preferably to less than 1 mm, due to the removal of material.
  • achieved or the modifications for specifying the separation region are generated after the material removal, wherein the modifications are produced such that the separation region at least in places less than 10mm, in particular less than 5mm and preferably less than 1 mm, is spaced to a surface exposed by the material removal surface ,
  • At least individual modifications of the detachment area are particularly preferably part of the removal of material exposed and at least partially and preferably completely encircling surface of the donor substrate.
  • the material is removed by means of ablation radiation, in particular ablation LASER rays, or ablation fluids, or by the removal of material a recess having an asymmetrical shape is produced, or the removal of material occurs at least in sections in the circumferential direction of the Donor substrate in the entire region between the release region and a surface of the donor substrate that is homogeneously spaced from the release region as a reduction in the radial extent of the donor substrate.
  • the method according to the invention preferably also comprises the step of generating at least one modification in the interior of the donor substrate by means of at least one LASER beam, wherein the LASER beam penetrates into the donor substrate via a surface, in particular a planar surface, of the donor substrate, wherein the LASER beam is inclined relative to the planar surface of the donor substrate such that it penetrates into the donor substrate at an angle other than 0 ° or 180 ° with respect to the longitudinal axis of the donor substrate, the laser beam being focused to produce the modification in the donor substrate.
  • the solid state disk preferably detaches from the donor substrate by the generated modifications, or a voltage generation layer is created or disposed on the planar surface of the donor substrate, and thermal stresses are applied to the donor substrate by thermally energizing the voltage generation layer. Due to the mechanical stresses, a crack is preferably formed to separate a solid layer that propagates along the modifications.
  • a first portion of the LASER beam penetrates the donor substrate at a first angle to the planar surface of the donor substrate, and at least another portion of the LASER beam preferably penetrates the donor substrate at a second angle to the planar surface of the donor substrate Amount of the first angle is different from the amount of the second angle, wherein the first portion of the LASER beam and the further portion of the LASER beam are preferably focused to produce the modification in the donor substrate.
  • the donor wafer or the donor substrate or the solid and / or the LASER laser emitting LASER device is rotated about an axis of rotation during the generation of the modifications.
  • the entirety of the LASER rays is in accordance with another preferred embodiment of the present invention for the creation of modifications in the region of the center of the donor substrate and for the generation of modifications in the region of a radially-resultant edge of the donor substrate in the same orientation with respect to the planar surface aligned with the donor substrate.
  • This solution is advantageous because the entire cross section of the laser beam strikes a flat surface when it enters the solid, since then a homogeneous damage occurs in the depth.
  • This homogeneous damage can be generated up to the outer, in particular orthogonal to the flat surface extending edge of the donor substrate.
  • the modifications can be generated around the periphery of the donor substrate and in the region of the center of the donor substrate by means of a processing step.
  • the first portion of the LASER rays penetrate the donor substrate at a first angle to the surface of the donor substrate and the further portion of the LASER rays penetrate at a second angle to produce modifications in the region of the center of the donor substrate and for the generation of modifications in the region of a radially resulting edge of the donor substrate, the amount of the first angle always being different from the amount of the second angle.
  • the first angle and the second angle during the generation of the modifications are constant or unchanged or are not changed.
  • the method according to the invention also preferably comprises the step of removing material from the donor substrate starting from a surface extending in the circumferential direction of the donor substrate in the direction of the center of the donor substrate to produce a depression.
  • the material is removed by means of ablation laser beams and / or the depression is generated asymmetrically.
  • the individual, several, all or all of the detachment level or the detachment area generating or forming modifications to be produced before or after the material removal.
  • a first portion of the modifications may be generated prior to material removal, and a further portion of modifications may be generated after material removal. It is possible here that the modifications are generated before the removal of material with other laser parameters than after the material removal.
  • modifications can be made by means of further LASER rays inside the donor substrate, the modifications preferably being positioned so that they adjoin the depression.
  • the solid-state disk or solid-state layer preferably dissolves from the generated modifications Donor substrate or a voltage generating layer is generated or arranged on a surface inclined inclined to the aligned, in particular flat, surface or arranged.
  • mechanical stresses are generated in the donor substrate by applying thermal stress to the stress generator layer, wherein the mechanical stresses cause a crack to separate a solid layer that propagates from the depression along the modifications.
  • the modifications are in this case preferably achieved with the shortest possible pulses in the smallest possible vertical range by focusing in the material with high numerical aperture.
  • the ablation LASER rays are focused on the surface of the material, with a lower numerical aperture and often a wavelength that is linearly absorbed by the material.
  • the linear absorption of the ablation LASER rays on the material surface leads to an evaporation of the material, the ablation, ie a material removal, not just a structural change
  • an edge region of the donor sub-start is processed by means of a material-removing treatment, by means of which the outer edge of the donor substrate is displaced in the region of the plane in which the tear propagates in the direction of the center of the donor substrate.
  • the displacement preferably takes place in the direction of the center so that, depending on the penetration depth of the LASER beams and / or the angle of the LASER beams, all the LASER beams can penetrate into the donor substrate via the same planar surface.
  • the recess completely surrounds the dispenser substrate according to a further preferred embodiment of the present invention in the circumferential direction.
  • This embodiment is advantageous because the crack can be introduced into the donor substrate over the entire circumference of the donor substrate in a defined manner.
  • the depression extends in the direction of the center as far as a depression end, in particular in a wedge or notch shape, the depression end lying in the plane in which the tear propagates.
  • a notch will be created by the recess end, by which the propagation direction of the crack is predetermined.
  • the asymmetrical recess is produced by means of a grinding tool which is at least partially negative-shaped for recessing. This embodiment is advantageous in that the grinding tool can be produced according to the edge or recess to be produced.
  • the grinding tool has at least two differently shaped machining parts, wherein a first machining portion for machining the donor substrate in the region of the underside of a solid disk to be separated and a second machining portion for machining the donor substrate in the region of the top of the separated from the donor substrate Solid disk is determined.
  • This embodiment is advantageous because, in addition to deformations to effect improved crack guidance, deformations for better handling can be effected at the same time or with a time delay on the donor substrate or on the one or more solid disk (s) of the donor substrate.
  • the first processing component generates a deeper or larger volume depression in the donor substrate than the second processing component, wherein the first processing component and / or the second processing component have curved or straight grinding surfaces.
  • the first machining portion has a curved main grinding surface and the second machining portion preferably also has a curved minor grinding surface, the radius of the main grinding surface being greater than the radius of the minor grinding surface, preferably the radius of the main grinding surface is at least twice the radius of the minor grinding surface or the first machining portion has a straight main grinding surface and the second machining portion has a straight minor grinding surface, more material being removed from the donor substrate by the main grinding surface than the minor grinding surface, or the first machining component having a straight main grinding surface and the second machining component having a curved minor grinding surface On or the first processing component has a curved main grinding surface and the second processing component has a straight Mauschleif Structure.
  • the grinding tool has a plurality, in particular more than 2, 3, 4, 5, 6, 7, 8, 9 or 10, of machining parts in order to machine a corresponding plurality of different solid disks assignable portions of the donor substrate or material removal material.
  • the ablation laser beams having a wavelength in the range between 300 nm (UV ablation with frequency-tripled Nd: YAG or other solid state laser) and 10 ⁇ (C02 gas laser, often for engraving and cutting processes used) having a pulse duration of less than 100 microseconds, and preferably less than 1 microsecond, and more preferably less than 1/10 microsecond, and having a pulse energy greater than 1 ⁇ J, and preferably greater than 10.
  • This embodiment is advantageous since the recess can be produced by means of a LASER device and not by means of a worn grinding tool.
  • the modifications in the donor substrate are preferably produced with the following configurations or LASER parameters: If the donor substrate consists of silicon or if the donor substrate comprises silicon, then nanosecond pulses or shorter ( ⁇ 500 ns), a pulse energy in the microjoule range ( ⁇ 100 ⁇ s) are preferred. and a wavelength> 1000nm used.
  • pulses ⁇ 5 picoseconds pulse energies in the microjoule range ( ⁇ 100 ⁇ ) and wavelengths wavelengths variable between 300 nm and 2500 nm are used.
  • the aperture for creating the modifications inside the donor substrate is thus preferably larger than the aperture for ablation of material by means of the ablation laser beams for generating the depression.
  • the aperture is preferably at least a multiple, in particular at least 2, 3, 4, 5, 6 times larger than the aperture for ablation of material by means of the ablation laser beams for generating the depression.
  • the focus size for generating a modification is, in particular with regard to its diameter, preferably less than ⁇ ⁇ , preferably less than 5 ⁇ and particularly preferably less than 3 ⁇ .
  • the method according to the invention preferably also comprises one or more of the following steps: providing the donor substrate or providing a donor substrate (or solid) which has crystal lattice planes which are inclined with respect to a planar main surface.
  • the main surface of the donor substrate is preferably limited in the longitudinal direction of the donor sub-start on the one hand, wherein a Kritallgitterebenennormale tends towards a main surface normal in a first direction.
  • Provision of at least one laser Introduction of laser radiation of the laser into the interior of the solid preferably over the main surface to Changing the material properties of the solid in the range of at least one laser focus.
  • the laser focus is preferably formed by laser beams of the laser emitted by the laser.
  • the change in the material property forms a linear shape by changing the penetration of the laser radiation into the donor substrate.
  • the changes in the material property are preferably produced on a production plane which preferably runs parallel to the main surface.
  • the linear shape preferably extends at least in sections in a straight line or in a curved manner.
  • the crystal lattice planes of the donor substrate are preferably inclined with respect to the plane of production.
  • the linear shape in particular at least the rectilinearly extending portion or the arcuately extending portion, is inclined with respect to a cutting line resulting at the interface between the generating plane and the crystal lattice plane, whereby the altered material property tears the donor substrate in the form of subcritical cracks .
  • the step of separating the solid state layer is performed by introducing an external force into the donor substrate for joining the subcritical cracks, or so much material on the generation plane is changed by means of the load radiation that the solid state layer peels away from the donor substrate by joining the subcritical cracks.
  • the main surface is hereby preferably regarded / defined as an ideally flat surface.
  • This method is advantageous in that the crack growth perpendicular to the writing direction is limited by the fact that the line-shaped shape is inclined with respect to a cutting line or cutting line resulting at the interface between the production plane and the crystal lattice plane.
  • the modifications per writing line are thus not generated in the same crystal lattice planes.
  • the first 1-5% of the modifications per writing line can now only a fraction, in particular less than 75% or less than 50% or less than 25% or less than 10% or no crystal lattice planes, the last 1-5% of the modifications cut the same line.
  • the writing line here is preferably longer than 1 cm or longer than 10 cm or longer than 20 cm or up to 20 cm long or up to 30 cm long or up to 40 cm long or up to 50 cm long.
  • the change of the material property can preferably be understood as the generation of a material modification or the generation of a crystal lattice defect, in particular the effecting of a locally limited phase change.
  • the line-shaped or writing line with respect to the cutting line in an angular range between 0.05 ° and 87 °, in particular in an angle range between 3 ° or 5 ° and 60 ° and preferably between 10 ° and 50 °, in particular between 10 ° and 30 °, such as between 12 ° and 20 ° or between 13 ° and 15 °, or between 20 ° and 50 °, in particular between 25 ° and 40 ° or between 30 ° and 45 ° or between 28 ° and 35 °, inclined.
  • This solution is advantageous because the inclination is so great that a sufficient number of different crystal lattice planes are part of any further modification of the same line shape or writing line.
  • so much material of the donor substrate is changed to form a linear shape or a plurality of line-shaped shapes resulting from the exposed as a result of Fest stressesenabtrennung ends of the individual crystal lattice planes and the material changes more patterns, for this purpose, a plurality of linear and preferably straight extending and parallel aligned material change areas are generated.
  • a line-shaped shape is preferably to be regarded as a set of points which forms a straight or curved line.
  • the distances between the centers of the individual points are preferably less than 250 ⁇ " ⁇ , in particular less than 150 ⁇ or less than 50 ⁇ or less than 15 ⁇ or less than 10 ⁇ or less than 5 ⁇ or less than 2 ⁇ - ⁇ , apart.
  • a plurality of line-shaped shapes are produced on the same generation plane, preferably at least several of the line-shaped shapes are arranged at the same distance from one another.
  • the linear shapes may be arcuate in particular circular arc or straight.
  • a plurality of first line-shaped shapes are produced, wherein each sub-critical shape generates a subcritical crack or a plurality of subcritical cracks, wherein the subcritical cracks of the first line-shaped shapes are spaced apart by a defined distance A1, the distance A1 is so large that the subcritical cracks in the axial direction of the donor substrate do not overlap, in particular at least or up to 2 ⁇ or at least or up to 5 ⁇ or at least or up to ⁇ ⁇ or at least or up to 20 ⁇ or at least or up to 30 ⁇ or at least or up to 50 ⁇ or at least or up to 75 ⁇ or at least or up to ⁇ ⁇ are spaced apart from each other, and after the generation of the first line-shaped figures at least between two first linear shapes, and preferably between more than two In the first line-shaped figures, at least one further line-shaped shape is generated by means of laser beams, in particular by changing the material properties.
  • any modification or accumulation of modifications preferably causes tearing of the surrounding donor substrate material, especially in the extension direction of the slip plane of the crystal.
  • the plurality of subcritical cracks per linear shape are preferably connected to one another or can be connected by an external force and thereby form a subcritical main tear for each line-shaped shape.
  • the donor substrate has a hexagonal crystal lattice with wurttemberg structure or corundum structure, wherein the line-shaped shape at a predetermined angle between 15 ° and 60 °, in particular in the wurttemberg structure at an angle between 25 ° and 35 ° and preferably is generated at an angle of 30 ° and in the corundum structure between 10 ° and 60 °, and preferably at an angle of 45 °, with respect to the cut line, or the donor substrate has a cubic crystal lattice, the line shape at a predetermined angle between 7, 5 ° and 60 °, in particular in a monoclinic cubic structure at an angle between 17.5 ° and 27.5 ° and preferably at an angle of 22.5 ° or yttrium-aluminum garnet between 8 ° and 37 ° and preferably at an angle of 22.5 °, opposite the cut line, or the donor substrate has a triclinic crystal lattice er Modell on,
  • a plurality of dispenser substrates are arranged next to one another on a rotating device, in particular a rotary table, during the change in the material property, and are rotatable about a common axis of rotation.
  • the rotational speed is preferably greater than 10 revolutions / minute and preferably greater than 50 revolutions / minute and particularly preferably greater than 150 revolutions / minute, in particular up to 600 revolutions / minute.
  • the linear shape is preferably bent here.
  • the angle at which the curved line-shaped shape is inclined with respect to the cutting line resulting at the interface between the production plane and the crystal lattice plane is preferably to be regarded as a mean angle, more preferably an average angle is defined only when a curved linear shape is created. used.
  • the mean angle preferably refers exclusively to the middle 80% of the extension length of the respective curved linear shape, i. the inclination or the angles of the first 10% and the inclination or the angles of the last 10% of the extension length are preferably not taken into account for determining the mean angle.
  • the inclination or the angle with respect to the intersection line is preferably determined, summed up and divided by the number of accumulated angle values.
  • a beam shaping device for changing the properties of the applied laser radiation in particular a device for changing the polarization of the laser beams, in particular in the form of a rotating lambda half plate or a Pockels cell, is provided according to a further preferred embodiment of the present invention and / or Beam shaping device is preferably designed to polarize the laser radiation circular or elliptical, wherein the donor substrate with the circular or elliptically polarized laser radiation, in particular in the form of quarter-wave plates, is applied.
  • a beam shaping device for changing the properties of the impinging Laser beams provided.
  • These properties of the laser beams are in particular the polarization properties of the laser beams, the spatial profile of the laser beams before and after focusing and the spatial and temporal phase distribution of the individual wavelengths of the impinging laser beams, which are influenced by the wavelength-dependent dispersion in individual elements of the beam path as the focusing optics can.
  • the beam shaping device can be equipped, for example, with a rotating lambda half plate or similar birefringent elements for varying the polarization of the laser beams passing through.
  • the polarization of the applied laser beams can be changed as a function of the rotational speed of the recording component.
  • an external electric field causes a field-dependent birefringence in the material, the so-called Pockels effect or linear electro-optic effect, which can be used to change the polarization of laser beams depending on the applied voltage.
  • This solution has the advantage that they have faster switching times compared with a rotating plate and can thus be better synchronized with the movement of the table or the solid.
  • the beam-shaping device can also be designed such that the laser beams are circularly polarized before the solid is subjected to the action.
  • Laser radiation is usually linearly polarized, but can be converted into circularly polarized light by birefringent optical elements such as quarter-wave plates.
  • circularly polarized light is converted back into linearly polarized light by just such an element.
  • a mixed form or combination of circularly and linearly polarized laser radiation so-called elliptically polarized laser radiation, is used.
  • the beam shaping device can be designed such that it alters the spatial profile of the laser beams before focusing or in focus. This can be achieved by simple elements such as a slot or telescope in only one spatial direction.
  • Such a telescope can be achieved, for example, from a combination of a cylindrical lens with a cylinder scattering lens whose relative focal lengths then dictate the laser beam size change in a spatial direction.
  • the telescope can also consist of several elements to prevent a crossing of the laser beams.
  • the shape of the focus when loading the solid body can also be changed and advantageously selected.
  • the beam shaping device can additionally be designed so that the shape of the laser beam focus can be changed as a function of the rotational speed of the recording component or of the orientation of the solid.
  • a spatial profile adapted thereto can be generated in focus by the beam shaping device, such as, for example, a laser beam profile tapering outwards.
  • Laser beams in pulse form consist of a spectrum of wavelengths which can experience different refractive indices in a beam shaping unit or an optical system for focusing before the application of the solid.
  • This dispersion causes femtosecond laser pulses to become longer, decreasing their peak intensity, which is undesirable for the application of multiphoton processes.
  • the beam shaping unit can be designed so that it compensates for the dispersion of other optical elements in the beam path before or after the focusing.
  • This dispersion can act both in space as chromatic aberration or in time as pulse prolongation or pulse compression.
  • the dispersion can also be changed and used by the beam shaping unit in such a way that a predefined color distribution of the wavelengths present in the laser pulse is produced in the focus.
  • SLMs Spatial Light Modulators
  • a Spatial Light Modulator can be used to scan individual areas of the laser beam after expansion of the laser beam.
  • individual pixels of the SLM illuminated by the laser beam - to memorize different phases.
  • This altered intensity distribution can lead to the formation of multiple foci and replace a diffractive optical element, but it can also change the beam profile - the intensity distribution - of the laser in several dimensions and thus generate eg oval shapes or deviating from a gaussian intensity distributions, eg a so-called " top haf profile with a broad range of equal intensity in the center of the laser beam intensity profile.
  • a reduction of the z-dimension of the beam profile a reduction of the laser damage range can be achieved
  • This solution is advantageous because it overcomes the problem that when passing short pulses (e.g., less than 100 fs), enhanced dispersions occur, i. the pulse dissipates, because some of the light is faster than others. Otherwise, the pulse would become longer, which would decrease its peak intensity, which is undesirable in the application of multiphoton processes.
  • short pulses e.g., less than 100 fs
  • enhanced dispersions occur, i. the pulse dissipates, because some of the light is faster than others. Otherwise, the pulse would become longer, which would decrease its peak intensity, which is undesirable in the application of multiphoton processes.
  • the main surface is a component of the solid state layer after the separation of the solid state layer and, after separation, preferably has a smaller thickness than the remaining residual donor substrate.
  • This embodiment is advantageous because the remaining donor substrate can be processed and used as a solid-state layer or for separating a further solid-state layer.
  • the method additionally comprises the step of moving the donor substrate relative to the laser.
  • the laser is set for defined focusing of the laser radiation and / or for adaptation of the laser energy preferably continuously as a function of at least one parameter and preferably a plurality of parameters, in particular at least two parameters.
  • a position-dependent laser power adjustment preferably takes place for adaptation to inhomogeneities of the samples or of the solid or of the substrate.
  • the change in the parameter via the irradiation surface and / or via the applied volume of the solid is preferably stored as data in the form of characteristic profile data, and is particularly preferably used for driving the laser application device for position-dependent laser application of the solid.
  • a traversing device on which the solid body is arranged in particular an XY table or a rotary table, is activated or operated as a function of the characteristic profile data.
  • the property profile data is generated and evaluated in real time, i. be used directly for driving the laser application device and / or the traversing device.
  • In-line adjustments are thus preferably based on changes that can be detected in real time (with sensor advance before machining position).
  • Non-contact one-sided (ie reflective instead of transmissive) measuring methods such as, for example, spectral reflection, are particularly suitable.
  • a laser system is preferably required which reads in a map with correction factors K (x, y) as prior knowledge prior to processing and with the aid of which sets laser parameters locally (x, y).
  • the specimens are preferably preferably provided on the traversing device, in particular the chuck / carrier, during the fixation, preferably with exact orientation, so that this prior knowledge can be registered with the chuck / carrier in the machine.
  • adapted writing patterns are suitable (other perforation density) or multiple crossings with different writing patterns.
  • an additional or alternative parameter is the degree of doping of the solid state material, which is preferably determined by the analysis of backscattered light (preferably Raman scattering), wherein the backscattered light has a different wavelength or different wavelength range than for triggering the backscatter defines incident light, with a Raman instrument preferably being part of the device and the degree of doping being preferably determined by means of the Raman instrument, one or more or all of these parameters preferably being detected by means of a common detection head, in particular at the same time.
  • the Raman spectroscopy is preferably also used in glasses, sapphire, alumina ceramic. The Raman method is advantageous because it measures in the depth of the material, but only from one side, does not require high transmission and, by fitting to the Raman spectrum, it outputs the carrier density / doping that can be correlated with the laser parameters.
  • An additional or alternative parameter according to a further preferred embodiment of the present invention is the degree of doping of the solid at a predetermined location or in a predetermined area, in particular in the interior, of the solid, in particular spaced from the solid surface.
  • the degree of doping is associated with location information such that a treatment card originates or provided spatially resolved treatment instruction, the location dependent laser parameters, in particular laser focus and / or laser energy, and / or other machine parameters, in particular the feed rate, predetermines or specify.
  • the degree of doping is determined in accordance with another preferred embodiment of the present invention by the analysis of backscattered light with inelastic scattering (Raman scattering), the backscattered light having a different wavelength or different wavelength range than incidentally induced light to initiate the backscattering wherein the backscattered light is scattered back from the predefined location or from the predetermined area.
  • Man scattering backscattered light with inelastic scattering
  • This embodiment is advantageous since in the laser process, in particular on SiC (but also other materials), the process must be carried out in a location-adapted manner (eg other laser energy, etc.). It has been recognized according to the invention that, for example, in SiC, doping in particular is crucial for this, since this changes the transparency of the material for the processing wavelength and makes higher laser energies necessary.
  • the degree of doping is determined according to a further preferred embodiment of the present invention by means of an ellipsometric measurement (eg, Müller-Matrix ellipsometry with back reflection). The ellipsometric measurement is preferably based on an optical transmission of the material.
  • the degree of doping is determined by means of a purely optically calibrated transmission measurement, the calibration being effected by means of Hall measurement and 4-point measurement.
  • This method can also determine the doping / number of free charge carriers in the material, which can then determine the laser energy required for the process.
  • the degree of doping is determined according to a further preferred embodiment of the present invention by means of an eddy current measurement, wherein preferably conductivity differences in the solid state material are determined and evaluated.
  • a transmitting and receiving coil is used to detect local differences in conductivity.
  • a high-frequency electromagnetic primary alternating field is generated.
  • eddy currents locally flowing currents
  • the overlay of these fields can be measured, separated and evaluated.
  • various quality characteristics layer thickness, the sheet resistance, the material homogeneity
  • transmission arrangement test body between transmitting and receiving coil
  • optimal resolutions are achieved, but also the arrangement of both coils on a sample side for reflection measurements is possible.
  • a first parameter here may be the average refractive index of the material of the donor substrate or the refractive index of the material of the donor substrate in the region of the donor substrate to be traversed to produce a defined change in material of laser radiation and a second or alternative first parameter may be the processing depth in the
  • the first parameter is preferably determined by means of a refractive index determination means, in particular by means of spectral reflection, and / or the second parameter is preferably determined by means of a topography determination means, in particular by means of a confocal-chromatic distance sensor.
  • a first parameter is the average refractive index of the material of the solid or is the refractive index of the material of the solid in the region of the solid to be traversed to produce a defined modification of laser beams, or is the transmission of the Solid at defined points of the solid and preferred for a defined solid body depth.
  • a second or alternative first parameter according to another preferred embodiment of the present invention is the machining depth in the region of the solid to be traversed to produce a defined modification of laser beams.
  • the first parameter is determined according to a further preferred embodiment of the present invention by means of a refractive index determination means, in particular by means of spectral reflection, and / or the second parameter is determined by means of a topography determination means, in particular by means of a confocal chromatic distance sensor.
  • Data for the parameters, in particular for the first parameter and for the second parameter, are provided in a data storage device according to a further preferred embodiment of the present invention and supplied to a control device at least prior to the generation of the material change, wherein the control device controls the laser as a function of the respective location the control device for adjusting the laser preferably also processes distance data to a distance parameter, the distance parameter being the distance of the respective location, are introduced at the laser radiation for generating the material change in the donor substrate at the time of material change, with respect to the laser reproduces, wherein the distance data are detected by means of a sensor device.
  • Data for the parameters, in particular for the first parameter and for the second parameter, are provided in a data storage device and supplied to a control device at least prior to the generation of the modifications, the control device depending on the respective location sets the modification to be generated.
  • the number of modifications may vary depending on the distance to the edge or to the center and / or per writing line or line shape. For example, more or fewer modifications can be made in the radial direction in the region of the center of the solid than in an edge region.
  • the edge region is preferably understood to be a circumferential region which preferably extends up to 0.1 mm or 0.5 mm or 1 mm or 5 mm or 10 mm or 20 mm in the radial direction towards the center.
  • the modification cluster by more modifications than the immediately surrounding portions of the solid, in particular in a radial distance of up to 0.1 mm or 0.5mm or 1mm or 2mm or 3mm or 5mm or 10mm or 20mm or 30mm or 40mm portions spaced at the edge or center of the cluster or at the edge of the cluster, having less modifications.
  • This accumulation can be used, for example, to generate additional local stresses to initiate the crack.
  • a voltage increase for triggering a crack, in particular main crack can be effected.
  • the solid body is connected to a cooling device via a solid surface, in particular during the laser application or modification generation, the solid surface which is connected to the cooling device being parallel or substantially parallel to the surface is formed, via which the laser beams penetrate into the solid, wherein the cooling device is operated in response to the laser application, in particular in dependence on the resulting by the laser exposure temperature of the solid.
  • the surface over which the solid body is connected to the cooling device is operated in response to the laser application, in particular in dependence on the resulting by the laser exposure temperature of the solid.
  • the cooling device is operated such that the heat introduced by the laser beams into the solid heat input is removed by the cooling device from the solid.
  • This cooling device is thus preferably a cooling device for discharging or withdrawing from During the modification generation by means of the laser beams introduced into the solid heat.
  • the cooling device has according to a further preferred embodiment of the present invention, at least one sensor device for detecting the temperature of the solid and causes depending on a predetermined temperature profile, a cooling of the solid.
  • This embodiment is advantageous because a temperature change of the solid body can be detected very precisely by the sensor device.
  • the change in temperature is used as a data input for driving the cooling device.
  • the cooling device is coupled to a rotation device and the cooling device is rotated with the solid arranged thereon during the modification generation by means of the rotation device, in particular at more than 100 revolutions per minute or at more than 200 revolutions per minute or with more than 500 revolutions.
  • the energy of the laser beam of the laser in particular fs laser (femtosecond laser) or ps laser (picosecond laser) or ns laser (nanosecond laser), is chosen such that the material conversion in the solid state or in the crystal in at least one direction is less than or greater than 30 times, or 20 times or 10 times or 9 times or 8 or 7 times or 6 times or 5 times or 4 times or three times the reyle length.
  • the wavelength of the laser beam of the laser is chosen according to a further preferred embodiment of the present invention such that the linear absorption of the solid or material is less than 10 cm -1 and preferably less than 1 cm "1 and more preferably less than 0.1 cm " 1 is.
  • an immersion liquid is applied to the exposed surface of the solid prior to the generation of the modifications or defects.
  • the workpiece or solid it is then preferable for the workpiece or solid to be exposed to the immersion liquid.
  • the refractive index of the immersion liquid preferably at least substantially coincides with the refractive index of the solid or agrees or coincides exactly. This solution is advantageous because of the use an immersion liquid, in particular an oil or water, which is compensated for the roughness of the surface of the solid which results from splitting or any other surface treatment.
  • the immersion liquid in particular without a prior to the defect generation and after a first cleavage of a solid layer usually usual polishing the exposed surface, defects or modifications, in particular by means of laser beams to introduce very accurately in the solid.
  • the immersion liquid is preferably applied to the exposed surface in an amount such that at least more than half, and preferably completely, the exposed surface is wetted by it.
  • the immersion liquid is covered with a cover plate in such a way that the same refractive index is present between the crack guide layer to be produced and the cover plate, in particular no air pockets occur between the exposed surface and the cover plate.
  • the cover plate at least on the side facing away from the exposed surface of the solid body surface roughness, which is less than the surface roughness of the exposed surface.
  • the immersion liquid is applied as a droplet to the exposed surface and the droplet is brought into contact with the modification generating device or a part of the laser device, in particular an optical element, in such a way that a relative movement between the solid and the Modification generating device causes a repositioning of the droplet.
  • the solid can be arranged in a trough and the immersion liquid encloses or flows around the solid partially and preferably completely, in particular, the immersion liquid forms a layer completely covering the exposed surface or liquid layer.
  • the modifications or the modifications produced by the laser beams inside the solid state provide at least one crack guiding layer or release region, the crack guiding layer describing at least one three-dimensional contour.
  • a crack propagation is effected within the workpiece or solid.
  • the crack propagation becomes Preferably, a three-dimensional solid layer or a three-dimensional solid separated from the solid along the crack guiding layer.
  • At least or exactly one surface of the solid-state layer or of the solid body corresponds to the three-dimensional contour of the crack-guiding layer or of the contour described by the detachment region.
  • the shape of the crack guiding layer thus has, according to a preferred embodiment of the present invention, at least in sections the contour of a three-dimensional object, in particular a lens or a spade.
  • a defect generating device particularly an ion gun or a laser, is used to generate the defects.
  • the attachment or production of the recording layer on the exposed surface of the solid takes place in accordance with a further preferred embodiment of the present invention prior to the production of the modifications, wherein the recording layer has at least one locally varying property, the modifications being produced by laser beams of a laser, the laser beams be influenced by the recording layer so that the modifications are generated as a function of the at least one locally varying property.
  • the laser beams are thus preferably guided directly through the recording layer.
  • the crack guiding layer which describes at least a three-dimensional contour, can be produced in such a way that first the recording layer, in particular in film form, is produced in a desired manner in a 3D form or with a 3D structuring ( eg injection molding).
  • Receiving layer consists preferably of a polymer, in particular an elastomer or more elastomers, which are preferably optically stable, such as some representatives of the silicones.
  • the applied to the solid, in particular adhered recording layer causes in the defect generation or modification generation, ie in the laser exposure, by their 3D structuring or 3D shape that the optical path of the laser in a suitable manner changed so that the desired defects or modifications by which the crack guiding layer is formed are generated.
  • the locally varying property of the recording layer is preferably the thickness of the recording layer.
  • the method according to the invention may additionally or alternatively comprise the step of modifying the crystal lattice of the solid by means of a modifying agent.
  • modifications are preferably produced to form an uneven, in particular curved, detachment region in the interior of the solid.
  • the modifications are preferably generated as a function of predetermined parameters.
  • the predetermined parameters preferably describe a relationship between a deformation of the solids content as a function of a defined further treatment of the solids content.
  • the solids content is preferably generated such that it assumes the desired shape due to the later processing.
  • the solids content is produced with a shape by which the deformation resulting from the coating is utilized in order to provide a surface of the multilayer arrangement which is preferably at least on one side and preferably preferably planar on both sides.
  • the object can additionally or alternatively be solved by a method for producing a multilayer arrangement.
  • the method for producing the multilayer arrangement preferably comprises one, one or more or all of the following steps: providing a, in particular curved, wafer having a first uneven shape; Arranging or creating another layer on at least one surface of the wafer; wherein the further layer and the wafer have different coefficients of thermal expansion, wherein the further layer is arranged or generated at a surface temperature of the wafer different from a target temperature, and wherein the further layer is configured such that it reaches the wafer when reaching the wafer Target temperature is applied so that the wafer from the first uneven shape is deformed into a second shape, which differs from the first shape, wherein the second mold is preferably a planar shape.
  • the uneven solid body preferably has a warp or forms a warp which is negative or substantially negative to the deformation of the solid fraction caused by the coating.
  • the deformation which occurs as a result of the coating is advantageously utilized by the defined configuration of the wafer, in order to obtain a preferably at least one preferred planar multilayer arrangement.
  • the further layer is produced by means of epitaxy.
  • the wafer has already been provided with a coating before arranging or producing the further layer.
  • the present invention may additionally or alternatively relate to an uneven solid portion, in particular to an uneven, in particular curved, wafer.
  • the uneven, in particular curved, solids content is preferably produced by a method presented herein.
  • the method comprises one, one or more or all of the following steps:
  • a solid for separating the uneven solid portion modifying the crystal lattice of the solid by means of a modifying agent, in particular a laser, in particular a picosecond or femtosecond laser, several modifications being made to form an uneven separation area in the crystal lattice.
  • the modifications are preferably generated as a function of predetermined parameters.
  • the predetermined parameters preferably describe a relationship between a deformation of the uneven solid layer or the uneven separated or separated solids or the uneven solid fraction depending on a defined further treatment of the uneven solid layer or the uneven separated or separated solids or of the solids content or the uneven solids content.
  • the second solid or solid fraction is preferably processed.
  • the second solid or solid fraction is preferably processed in such a way that electrical components and / or metallic structures and / or epilayer (s) can be produced or arranged or formed thereon.
  • the second solid or solid fraction undergoes a surface treatment comprising grindings, an edge process for processing the solid edges or wafer edges, in particular for reshaping the solid edges or wafer edges, and / or a chemical-mechanical polishing process.
  • a surface treatment comprising grindings, an edge process for processing the solid edges or wafer edges, in particular for reshaping the solid edges or wafer edges, and / or a chemical-mechanical polishing process.
  • the processed wafer or solid is then in one or more further steps, one or more Layers, in particular metal layers arranged or formed and / or arranged or generated electrical components.
  • the method according to the invention additionally or alternatively comprises the step of providing a solid, in particular a thick wafer, for splitting off at least one solid layer, in particular a thin wafer, producing a first group of defects or modifications by means of a Lasers or laser beams for prescribing a first Ablöseebene along the solid state layer is separated from the solid.
  • the method according to the invention additionally or alternatively comprises the step of generating further modifications or generating a second group of modifications by means of the laser or laser beams for specifying at least one second or further release plane.
  • the first release plane and the second release plane are preferably inclined, in particular orthogonal, aligned with each other.
  • the solid state layer is preferably detached along the first release plane as a result of the application or introduction of an external force from the remaining solid.
  • the separated solid state layer in particular without or with further layers or structures arranged thereon, in particular electrical components, is divided in a further, in particular downstream step, along the second release plane for separating solid state elements.
  • This method is advantageous in that a defined weakening of the solid-state structure or the solid-state layer structure is effected by the generation of modification in a plurality of mutually orthogonal planes without significant material loss, whereby predetermined breaking points are advantageously defined along which a stress-induced crack can be conducted.
  • At least one third group or yet another group of defects or modifications for specifying at least one and preferably a plurality of third detachment levels is generated by means of the laser or the laser beams.
  • each third release plane is aligned orthogonal to the first release plane and orthogonal to the second or to a second release plane.
  • the solid state layer is preferably divided or separated for separating the solid state elements along the second release plane and along the third release plane.
  • several third Abletteebenen be generated, which in interaction with several second Abletteebenen a preferably latticed pattern form, which delimits the individual solid-state elements that form the solid or form with each other.
  • the latticed pattern represents a grid-shaped predetermined breaking point, along which the plurality of individual solid state elements can be separated from each other in a simple and defined manner.
  • the second detachment planes always to have the same distance from each other or to have sections or completely different distances.
  • the third detachment planes always have the same distance from one another or have sections or completely different distances.
  • the second release planes always have the same distance from one another and preferably the third release planes always have the same distance from each other.
  • the distance between the second release planes is greater than or equal to the distance between the third release planes.
  • the stresses for detaching the solid-state layer are generated by the solid body by the thermal loading of at least one receiving layer arranged on the solid, in particular a polymer layer, in accordance with a further preferred embodiment of the present invention.
  • the thermal application preferably represents a cooling of the receiving layer or polymer layer to or below the ambient temperature and preferably below 10 ° C. and more preferably below 0 ° C. and more preferably below -10 ° C.
  • the cooling of the polymer layer is most preferably such that at least a part of the polymer layer, which preferably consists of PDMS, undergoes a glass transition.
  • the cooling may in this case be a cooling to below -100 ° C, e.g. is effected by means of liquid nitrogen.
  • This embodiment is advantageous because the polymer layer contracts as a function of the temperature change and / or experiences a gas transfer and transfers the resulting forces to the solid, whereby mechanical stresses can be generated in the solid, which trigger a crack and / or crack propagation lead, wherein the crack propagates first along the first release plane for splitting off the solid layer.
  • the polymer layer is subjected to a change of shape in a first direction and / or in a second direction, wherein a change in shape in the first direction causes a detachment of solid-state elements from one another along the second release plane and a Shape change in the second direction causes a detachment of solid state elements from each other along the third release plane.
  • This embodiment is advantageous since the already on the separated solid state layer arranged or adhering polymer layer not only serves for the separation of the solid state layer of the solid and for receiving the separated solid state layer, but is still used to separate the solid state elements. This therefore represents a significant simplification of the process and a significant acceleration of the process, as a result of which the individual solid state elements can be produced much more cheaply and more quickly.
  • the polymer layer can thus preferably be changed in shape in various ways, thereby providing high process flexibility.
  • the polymer layer is pulled in one or more directions, pressed and / or bent. Additionally or alternatively, however, it is also conceivable that the polymer layer is tempered so that it expands.
  • the modifications for forming the second release plane and / or for forming the third release plane are preferably partially below the first release plane and / or partially above the release plane, in particular in the region between the first release plane and the surface over which the laser beams for generating the first Ablöseebene have penetrated into the solid, generated or introduced.
  • the second release plane and a possible third release plane extend orthogonal to the first release plane. Therefore, modifications at different distances from the preferably exposed surface of the solid-state layer to be separated or to the surface through which the laser beams have penetrated into the solid body to produce the first release plane are particularly preferred.
  • the modifications for the formation of the second and possibly third release level are generated mostly above the first release level or in this area more preferably at least twice or at least three times or at least five times as many modifications have or have below the Ablöseebene.
  • the modifications of the second and / or third release plane can thereby preferably up to 200 ⁇ - ⁇ , in particular up to 100 ⁇ or up to 75 ⁇ or up to 50 ⁇ or up to 25 ⁇ or up to 10 ⁇ or up to 5 ⁇ , below the first release level are generated.
  • the modifications of the second and / or third release plane can be produced preferably at least 1 ⁇ m or at least 5 ⁇ m or at least 10 ⁇ m or at least 15 ⁇ m or at least 25 ⁇ m or at least 50 ⁇ m below the first release plane.
  • the method according to the invention additionally or alternatively comprises the step of pressing at least one pressurizing element of a pressurizing device against at least a predetermined portion of a voltage generating layer for pressing the voltage generating layer onto the surface.
  • the step of separating the solid state layer or solid state layer from the donor substrate or solid body preferably takes place by means of a thermal loading of the voltage generation layer. In this case, mechanical stresses are preferably generated in the donor substrate.
  • the pressurizing member is pressed against the voltage generating layer during the thermal energization of the voltage generating layer. This preferably causes a reduction in crack propagation speed to be achieved.
  • the detachment contour runs when the mechanical stresses generated by the voltage generation layer counteract a further force. This results from the fact that a vertical crack component is reduced or suppressed by the pressurization. This means that the outbreaks of cracks are reduced out of the plane or out of the detachment plane, thus resulting in a clearly flat crack course, as a result of which
  • Laser application reduces the material losses or the laser processing time or laser use can be reduced with unchanged output.
  • This solution is also advantageous because the split process, i. the period from the beginning of the temperature control to the completely detached wafer or solid-state disk can be significantly reduced. This results from a significantly improved thermal coupling.
  • the significantly improved thermal coupling preferably results from the thermal
  • Druckbeetzleyungselement is preferably also for removing heat or for cooling the donor substrate and / or the receiving layer, in particular the
  • the split process time can be shortened from more than 10 min to less than 1 min or significantly reduced.
  • the shortened split process time is also advantageous because significantly improved line control, i. successively
  • Treatments in particular consisting of laser application, arranging a Recording layer on the donor substrate or laminating, performing the split process and surface preparation, in particular Grinden, the result of the separation generated or exposed surface / n.
  • the solution according to the invention is furthermore advantageous, since electronic components can be arranged or generated on the donor substrate and they are not damaged during splitting by deformation of the solid-state layer or of the wafer or the risk of damage can be significantly reduced. It is thus a deflection of the solid body layer or the wafer is reduced during separation, in particular completely avoided. That is, the solid state layer or wafer is preferably deflected less than 20 ° or less than 15 ° or less than 10 ° or less than 5 ° or less than 1 ° or less than 0.5 °.
  • a deflection of the wafer or the solid-state layer, at least in the region acted upon by the pressurizing means is preferably less than 20 ° or less than 15 ° or less than 10 ° or less than 5 ° or less than 1 ° or less Limited to 0.5 °.
  • the stress generating layer contracts as a result of the thermal stress, thereby inducing tensile forces in the donor substrate from the stress generating layer.
  • the applied pressure counteracts the tensile forces, which reduces force peaks and spreads the crack much more clearly.
  • the pressurizing element during the pressurization is at least partially in area contact with the voltage generating layer.
  • the pressurizing element thereby superimposed more than 20% or more than 30% or more than 50% or more than 75% or more than 90% or completely the axially the donor substrate limiting surface which is part of the solid state after separation.
  • the pressurization element preferably abuts against the voltage generation layer arranged or generated on this surface.
  • the pressurizing element preferably contacts more than 20% or more than 30% or more than 50% or more than 75% or more than 90% of the surface of the voltage generating layer axially overlapping the donor substrate.
  • the at least one pressurizing element generates the pressure in an edge region, wherein the edge region preferably the radially outwardly or center-distant 5% or 10% or 15% or 20% or 30% or 40%. or at least 50% or 60% or 70% or 80% of the surface area of the voltage generation layer disposed on the donor substrate; and / or the at least one Pressurizing element generates the pressure in a center region, wherein the center region preferably the radially in the center or extending toward the center or extending 5% or 10% or 15% or 20% or 30% or 40% or 50% or 60 % or 70% or 80% of the surface area of the voltage generating layer disposed on the donor substrate or the at least one pressurizing element generates the pressure over the entire planar portion of the surface of the donor substrate on which the voltage generating layer is disposed.
  • This embodiment is advantageous because the pressure for influencing the crack propagation can be applied as needed.
  • the pressurizing element applies a compressive force to the voltage generation layer as a function of the substrate diameter of at least 10 N, in particular between 100 N and 3000 N or between 3000 N and 10000 N or up to 100 kN.
  • This solution is advantageous because, on the one hand, the forces generated by the voltage generation layer can be specifically counteracted and, on the other hand, crack propagation and crack initiation are still possible.
  • the pressurizing member is movably disposed according to another preferred embodiment of the present invention, and is preferably deflected from the voltage generating layer relative to the donor substrate due to thermal stress of the voltage generating layer or the donor substrate is movably displaced from the voltage generating layer relative to the pressurizing member due to thermal stress of the voltage generating layer ,
  • the pressurizing element and / or the donor substrate is deflectable or displaceable in the axial direction of the donor substrate.
  • the deflection of the pressurizing element takes place according to a further preferred embodiment of the present invention only after exceeding a predefined minimum force. This embodiment is advantageous because it is very precisely adjustable by the predefined minimum force how strongly occurring force peaks are to be reduced.
  • a plurality of pressurizing elements is provided, wherein the individual pressurizing elements serve to apply locally different pressures and / or have different shapes and / or contact surface dimensions and / or are deflected differently or deflected differently and / or with different forces are deflected or deflected.
  • the pressurizing element or pressurizing elements can be pressed against the voltage generating layer, the contact pressure profile being at least in sections from the distance of the pressure application to the axial center of the dispenser substrate and / or from the crack propagation velocity and / or thermal loading and / or the material of the donor substrate and / or conditioning of the donor substrate, in particular by means of laser beams, depends.
  • the pressurization elements in each case a compressive force of at least 10 N, in particular between 100 N and 3000 N or between 3000 N and 10000 N or up to 100 kN on the voltage generation layer.
  • the pressurization in two simultaneously applied pressurizing elements by a factor of up to or at least 0.1 or from up to or at least 0.3 or from up to or at least 0.5 or from up to or at least 0.75 or from to to or at least 1, 5 or from up to or at least 2 or from up to or at least 5 or from up to or at least 10 or from up to or at least 20 different from each other.
  • the deflection of the pressurizing elements is thus preferably carried out only after the exceeding of predefined minimum forces. This embodiment is advantageous because it is very precisely adjustable by the predefined minimum forces, such as strongly occurring force peaks are to be reduced by the individual pressurizing elements.
  • the method according to the invention additionally or alternatively comprises one or more of the following steps: generating or arranging a voltage generation layer on a surface of the donor substrate axially delimiting, especially flat, the donor substrate. Placing a pressurizing member of a pressurizing means at a predetermined distance from the voltage generating layer or at a predetermined distance to the releasing portion for contacting with the voltage generating layer during disconnection. Separating the solid state layer from the donor substrate by thermally applying the voltage generation layer. In this case, mechanical stresses are preferably generated in the donor substrate. Preferably, portions of the solid state layer are deflected by the mechanical stresses. Preference is given to a crack for separating a solid state. By at least one separated portion of the Solid state position deflected due to the voltage generating layer in the direction of the pressurizing element and pressed against the pressurizing element. Preferably, the pressurizing element limits the maximum deflection of the solid state layer.
  • the contact side of the pressurizing member is disposed at a distance in the axial direction of the surface of the voltage generating layer, which is less than the shortest distance between the axial center of the donor substrate and the (radial) peripheral surface of the donor substrate.
  • the distance is between 0.001 times and 0.9 times, in particular between 0.001 times and 0.5 times or between 0.001 times and 0.1 times, the length of the shortest distance between the axial center of the donor substrate and the (radial) Peripheral surface of the donor substrate.
  • the distance between the contact side of the pressurizing element and the surface of the voltage generating layer is less than 5 cm, in particular less than 2 cm or less than 1 cm or less than 0.5 cm or less than 0.1 cm.
  • the processed surface or the processed layer of the donor substrate in particular a device layer layer is not or only slightly bent, the polymer or the receiving layer is arranged on another donor substrate surface or the polymer or the recording layer not is arranged on the processed layer.
  • the temperature of the receiving layer or polymer layer is at least in the majority of separated from a donor substrate solid state layers or wafers at a minimum distance to the processed layer, the minimum distance preferably a multiple, in particular at least 2-fold or at least 5-fold or at least 10 times or at least 20 times the thickness of the receiving layer or polymer layer. This is advantageous because the thermal load of the processed layer is significantly reduced.
  • this transfer wafer may, for example, be held by a holding device for further stabilization.
  • the bonding is preferably carried out by means of direct bonding or temporarily with a bonding tape, wherein the compound, for example by means of radiation, in particular UV radiation, or heat, in particular temperatures above 20 ° C or above 50 ° C or above 100 ° C, in particular up to 1 10 ° C or up to 200 ° C or up to 500 ° C, or one alternative treatment can be lifted.
  • This solution can preferably be combined with one or all of the previously described embodiments, in particular the preferred embodiments of claim 1.
  • the object mentioned at the outset is likewise achieved by a system for separating solid-state disks from a donor substrate.
  • the system preferably comprises at least one laser device for generating modifications inside the donor substrate for forming a separation region for guiding a separation tear, a tempering device for cooling a voltage generation layer mounted on the donor substrate for triggering the separation tear, a pressurization device with at least one pressurization element for pressurizing the voltage generation layer disposed on the donor substrate during propagation of the separation tear. It is thus preferably a suppression of the vertical crack components. This results in less outbreak cracking which results in a higher yield and / or less laser exposure. Furthermore, the application of force causes a significantly better thermal coupling, which in turn leads to a significantly lower split time.
  • the reduced split time allows better timing with other processes as it would take more than 10 minutes / split without this application of force and less than one minute by applying force.
  • a significantly improved line control can thus be achieved, comprising two or more of the following treatment steps: generation of modifications inside the solid or donor substrate by means of a laser and / or application of a polymer film on the donor substrate, in particular by means of a lamination device, and / or splitting the donor substrate in the region along the release plane or the release region caused by the modifications due to the introduction of an external force in the donor substrate, in particular by means of a cooling device or an ultrasonic device, and / or perform a surface treatment of the surface exposed by the split the remaining residual donor substrate, in particular by means of a machining device, such as a cattle, and / or a chemical, in particular etching, surface treatment.
  • the solution according to the invention is therefore also advantageous because the deflection of the separated or separated solid layer is reduced to a minimum or completely prevented by the application of force.
  • This also makes it possible to split off a solid-state layer, in particular a composite structure, from the donor substrate on which semi-finished or finished functional components, in particular means (devices), such as transistors or resistors or processors, are arranged or generated. Further a higher temperature in the midplane (device level) is possible, which also reduces the risk of damage to the funds.
  • a significant improvement in the processes for the MEMS and / or compound wafer treatment is provided.
  • the tempering device is preferably a cooling device, in particular a device for providing at least one or exactly one functional fluid, in particular liquid nitrogen or nitrogenous nitrogen. At least one pressurizing element is provided with a heating element.
  • FIG. 13 shows another example of an edge treatment in the context of solid-state disk production according to the invention.
  • FIG. 14 is a diagram showing problems encountered in producing modifications in a solid when the modifications are generated by laser rays
  • FIG. 15 is an illustration showing different laser beam angles.
  • 19 is a schematic representation of a solid body having recesses which are covered or superimposed by a voltage generation layer, 20a-20d another example of an edge treatment in the context of solid-state disk production according to the invention,
  • FIG. 21 shows a donor substrate with crystal lattice planes aligned at a non-90 ° angle with respect to the longitudinal axis and laser writing lines generated
  • Fig. 22 shows another donor substrate with respect to the longitudinal axis in one
  • FIG. 23 shows that the modifications of a line shape intersect a plurality of different crystal lattice planes
  • FIG. 24 shows an example of a glide-plane crystal lattice for 4HSiC.
  • 25a shows an example of a crystal lattice with slip plane 1 10 for Si
  • FIG. 25b shows an example of a crystal lattice with slip plane 100 for Si
  • 25c shows an example of a crystal lattice with slip plane 1 1 1 for Si
  • 27b is a plan view of an exemplary rotation device
  • 27c shows a side view of a processing installation, wherein the processing installation has a preferably linearly displaceable laser element and a rotation device with a multiplicity of dispenser substrates arranged thereon,
  • FIG. 28b shows the production of a further crack-guiding layer for producing a three-dimensional solid
  • Fig. 29a shows a schematic structure for generating defects in a
  • 29b is a schematic representation of a layer arrangement before separating a solid layer from a solid, a schematic representation of a layer arrangement after the separation of a solid layer of a solid, a first schematically illustrated variant for defect generation by means of laser radiation, a second schematically illustrated variant for defect generation by means of laser inertia, a schematic side view of an uneven wafer according to the invention,
  • FIG. 38b shows a feedback process according to the invention
  • FIG. 39 shows an example of a schematic representation of the release plane
  • Fig. 40a shows a schematic plan view and a schematic side view of
  • FIG. 40b shows the illustration of FIG. 40a and a schematic representation of a first release plane
  • Fig. 42a shows a schematic example of the formation of a plurality of second ones
  • Fig. 42b shows another schematic example regarding the formation of the second one
  • Fig. 43 shows a solid state layer with second Abletteebenen, on a
  • Polymer layer is arranged,
  • Fig. 44a shows a solid state layer before being divided into solid state elements
  • FIG. 44b shows a solid state layer after the division into solid state elements
  • Fig. 45a schematically a device for pressurizing a with a
  • FIG. 45b schematically shows an arrangement according to FIG. 45b, wherein the donor substrate has been modified in its interior by means of laser beams, FIG.
  • FIG. 46 schematically shows a device for limiting a deflection movement of the separated solid-state layer portions
  • FIG. schematically a pressurizing device with a plurality of pressurizing elements
  • FIG. schematically a device for applying different surface portions of the voltage generating layer with different pressures
  • schematically a plan view of the in Fig. 48b 1 shows a schematic cross-sectional view of a thick wafer for separating a plurality of solid-state layers, wherein all solid-state layers have different diameters, different representations of several wafers with different diameters
  • FIG. a function, depending on which can be introduced by means of laser beams through a metal-coated surface in a solid, two examples of writing paths during the modification generation,
  • FIGS. 56-57 show further examples for explaining the effect of components, implant areas, dopings, etch trenches, etc. on the location of the focus.
  • FIG. 58 depicts time points for generating modifications by means of
  • Fig. 1a shows the provision of the solid 1, in particular a wafer.
  • the solid body 1 provided is coupled or glued or welded or screwed or clamped or dried or frozen or sucked by a vacuum, the tool carrier preferably comprising a cooling functionality and thereby preferably to the cooling device 3 becomes.
  • Freezing is preferably carried out by solidifying a fluid, in particular a
  • Liquid especially water or one or more other materials with a
  • Solidifying by moisturizing or dehumidifying It is also possible in this case for the solid to be replaced by two or more than two effects, e.g. suck on and clamp or clamp on and clamp or screw on and dry on the chuck is fixed, the chuck or tool carrier is particularly preferably designed as Vakuumchuck.
  • the solid body 1 is preferably in the longitudinal direction with his
  • Cooling device 3 fixed, in particular glued.
  • the laser beams are thus for
  • Solid layer is introduced into the solid state 1 in the direction of the cooling device 3.
  • a high-temperature treatment of the surface 5, in particular an epitaxial material arrangement on the solid-body surface 5, preferably results from which a further layer 145 or several further layers 145 result.
  • the at least one high-temperature method is preferably an epitaxial method Doping method or a method using plasma, wherein by the high temperature method, in particular in the case of an epitaxial process, at least one layer 145 is produced on the solid 1, wherein the at least one layer 145 produced has predefined parameters, wherein at least one predefined parameter a maximum degree of refraction and / or absorption and / or reflection of laser light waves, the degree of refraction and / or absorption and / or reflection being less than 5% and preferably less than 1% and particularly preferably less than 0.1%.
  • the generated layer 145 or the further generated layers 145 may preferably be metal-free.
  • Fig. 1 c shows schematically the generation of the modifications 9 by means of the laser beams.
  • the laser beams preferably penetrate into the solid body 1 via the layer 145 previously produced by the high-temperature process. Alternatively, however, it is also conceivable that the laser beams should travel over a free, i. not with the further layer 145 coated surface of the solid 1, in particular from below, penetrate into the solid 1.
  • the solid body 1 is preferably held laterally or at the outer ends (width and / or depth direction).
  • Fig. 1 d shows a schematic sectional view of the solid 1 after the production of the modifications 9.
  • 4 blocks of modifications 9 can be seen, leading to the 4 crack portions 25, 27, 28, 29.
  • reference numerals 41, 42, 43, 44 and 45 respectively denote areas without modifications 9 or areas where fewer modifications 9 are made than in the areas where the blocks are produced at modifications 9.
  • FIG. 1 e shows a state according to which a receiving layer, in particular having a polymer material, is arranged or produced on further components (not shown) arranged on the surface 5 or on a further epitaxially produced surface on the surface 5.
  • the receiving layer has preferably been produced as a film and, after its production, has been coupled to the surface 5, in particular bonded or glued. However, it is also possible to form the receiving layer by applying a liquid polymer to the surface 5 and then solidifying.
  • an arrangement or generation of further layers 150 and / or components 150 on the surface 5 or on a further layer 145 already produced during an upstream high-temperature process preferably takes place.
  • Fig. 1f shows schematically a temperature of the recording layer.
  • the recording layer Preferably, the
  • Recording layer to a temperature below the ambient temperature, in particular to a temperature of less than 20 ° C, or less than 1 ° C or less than
  • the material of the receiving layer 140 undergoes a glass transition or crystallization as a result of the cooling.
  • the temperature of the receiving layer by means of liquid nitrogen, in particular by means of a nitrogen mist takes place. Due to the temperature, in particular due to the glass transition, the recording layer contracts, whereby mechanical stresses in the solid state 1 are generated. As a result of the mechanical stresses, a crack connecting the crack portions 25, 27, 28, 29 is triggered, by means of which the solids content 12 is separated from the solid body 1.
  • FIG. 2 a shows an embodiment according to which the receiving layer 140 is arranged on a surface of the solid body that is further apart from the modifications than a parallel or preferably substantially parallel or completely parallel surface 5.
  • the surface preferably has a further layer 145 (analogous to Fig. 1 b-1f) on.
  • components 150 or further material layers 150 are arranged.
  • a stabilization layer and / or a protective layer 142 is preferably arranged or produced on an exposed surface of the further material layer 150 or of the components 150.
  • the components 150 may in this case be cast, for example, in particular with a polymer material and / or ceramic material.
  • a stabilization device in particular a further wafer, such as a glass wafer, is coupled to the stabilization layer and / or protective layer 142, in particular adhesively bonded or bonded thereto.
  • the stabilization layer and / or protective layer 142 or the stabilization layer and / or protective layer 142 and the stabilization device cause the components 150 or further material layer 150 to deform only insignificantly or not during removal or after cleavage.
  • the deformation can be effected by the forces generated by the receiving layer 140, and after being split off, deformation can be effected by the remaining modifications, in particular, transformations of matter.
  • the stabilization layer 142 may thus additionally or alternatively be formed as a glass wafer or silicon wafer or as a metal layer, or additionally or alternatively a glass wafer may or may be arranged on the stabilization layer 142. If the stabilization layer 142 is designed as a metal layer, then it can be bonded, in particular adhesively bonded. Alternatively, it is possible for the metal layer 142 to be produced on the composite structure, in particular by means of sputtering.
  • a unit of separated solid-state layer and stabilization layer and / or protective layer 142 arranged thereon and any stabilization device arranged thereon are then preferably further treated for stress removal.
  • the stabilization layer 142 or the stabilization device particularly preferably forms a holding device, by means of which the separated solid state layer can be fixed for a material removal treatment with respect to a material removal device, in particular a grinding and / or polishing device. By means of the material removal device then remaining on the separated solid layer modification portions are removed, in particular removed by machining.
  • the solid state layer is preferably always thinner than the remaining solid content.
  • the receiving layer is not arranged or generated on a surface of the later solid-state layer, but on a surface of the remaining solid portion.
  • the separated solid layer preferably has a height of less than 40% of the height of the remaining solid compared to the remaining solid, in particular less than 30% or 20% of the height of the remaining solid.
  • the numerical aperture is preferably between 0.5 and 0.8, in particular 0.65
  • the irradiation depth is between 150 ⁇ m and ⁇ m, in particular at 300 ⁇ m "
  • the pulse spacing lies between 1 ⁇ and ⁇ , especially at 2 ⁇ " ⁇
  • the line spacing is between 1 ⁇ and ⁇ , especially at 2 ⁇
  • the pulse duration is between 50ns and 400ns, especially at 300ns
  • the pulse energy is between 3 ⁇ and 30 ⁇ , especially at 10 ⁇ .
  • the separated solid layer preferably has a height of less than 50% of the height of the remaining solid, in particular of less than 45% or 40% or 35% or 30% or 25% of the height of the remaining solid remaining solid.
  • the numerical aperture is preferably between 0.4 and 0.8, in particular 0.4
  • the EinstrahlISSe is preferably between 50 ⁇ and ⁇ , especially at ⁇ ⁇
  • the pulse spacing is preferably between 0, 1 ⁇ and 3 ⁇ " ⁇ , especially at ⁇ ⁇
  • the line spacing is preferably between 10 ⁇ and 200 ⁇ " ⁇ , in particular between 10 ⁇ and 100 ⁇ , especially at 75 ⁇
  • the pulse duration is preferably between 1fs and 10ns, especially at 3ns
  • the pulse energy is preferably between 0.5 ⁇ and 30 ⁇ , especially at 7 ⁇ .
  • a further layer 145 may be produced, even if it has not been identified.
  • the further material layers or components 150 are therefore preferably produced or arranged on the further layer 145 or on an exposed surface of the solid.
  • FIG. 2 b shows that the receiving layer can be arranged on a surface of the remaining solid and a further receiving layer 146 can be arranged on the components or further material layers 150.
  • the components may additionally be provided with a stabilization layer 142, as a result of which the further receiving layer 146 is preferably arranged or produced on the stabilization layer and / or protective layer 142.
  • the further receiving layer 146 is preferably provided as a film and preferably also consists at least partially of a polymer material. Particularly preferably, the further receiving layer 146 has the same material as the receiving layer 140 or 142. This embodiment is advantageous because the stresses for generating the crack from two sides can be introduced into the solid.
  • FIGS. 3a to 3i show various arrangements which can be provided after the generation of the further material layers or components 150 for initiating the crack.
  • FIGS. 3a-3i show various solid state arrangements 176 which are advantageous for introducing crack propagation and / or crack initiation voltages.
  • FIG. 3 a shows a processed solid body 1 or wafer with structures or components 150.
  • a receiving layer 140 is arranged or generated on the component side, in particular on the components 150 or the further material layers 150, in the solid body 1 shown in FIG.
  • the receiving layer 140 is in this case preferably arranged on the solid state layer to be separated.
  • the receiving layer 140 may also be referred to as a split film and is thus preferably laminated on the structure side.
  • a cooling of the overall arrangement takes place, whereby the split or the crack initiation and / or crack guidance is effected.
  • a holding layer / bonded wafer is arranged on the underside of the solid or on the exposed surface of the solid.
  • the holding layer may also be a tool carrier or chuck 3.
  • a cooling of the Overall arrangement whereby the split or the crack triggering and / or cracking is effected.
  • FIG. 3 b shows an arrangement in comparison with FIG. 3 b, according to which the solid body is provided on both sides with receiving layers 140, 146.
  • the further receiving layer 146 is in this case arranged on a surface of the residual solid remaining later, wherein an adhesion-promoting layer 148 and / or sacrificial layer 149 and / or protective layer 142 can be arranged or produced between the further receiving layer 146 and the solid body 1.
  • the two receiving layers 140 and 146 are preferably laminated.
  • a cooling of the overall arrangement takes place, whereby the split or the crack initiation and / or crack guidance is effected.
  • FIG. 3e shows an arrangement according to which no adhesion-promoting layer 148 and / or sacrificial layer 149 and / or protective layer 142 is arranged or generated between the further receiving layer 146 and the solid body 1 with respect to the arrangement known from FIG. 3d.
  • a cooling of the overall arrangement takes place, whereby the split or the crack initiation and / or crack guidance is effected.
  • 3f shows an arrangement which is constructed inversely to the arrangement known from FIG. 3d, ie that the adhesion-promoting layer 148 and / or sacrificial layer 149 and / or protective layer 142 is not arranged or generated between the further receiving layer 146 and the solid body 1, but is generated or arranged between the receiving layer 140 and the solid body 1 and thus on the solid state layer to be separated.
  • the components 150 or the structures in this case, e.g. one or more layers are produced by spin coating.
  • cooling of the overall arrangement takes place, whereby the split or the crack initiation and / or crack guidance is effected.
  • FIG. 3g shows an arrangement corresponding to a combination of the arrangements of FIGS. 3d and 3f.
  • the solid is preferably laminated on both sides with a split film, likewise a double-sided protective layer and / or adhesion-promoting layer and / or sacrificial layer may be provided under the split film; Spincoating possible.
  • cooling of the overall arrangement takes place, whereby the split or the crack initiation and / or crack guidance is effected.
  • Fig. 3h shows an arrangement which is similar to the arrangement shown in Fig. 3b, wherein the receiving layer is not arranged or laminated on one side of the solid state layer to be separated, but on the remaining after the separation residual solids. The separation is then carried out as a result of the cooling analogous to the separation of an ingot or as in an ingot process.
  • Fig. 3i shows an arrangement similar to the arrangement known from Fig. 3c, wherein one or more of the following layers or devices are arranged or generated on the component side of the solid or on or above the components 150.
  • cooling of the overall arrangement takes place, whereby the split or the crack initiation and / or crack guidance is effected.
  • Fig. 4 is an illustration of an example of a writing pattern in XY processing:
  • Arrows 170, 172 represent the laser advance direction, the black circles represent the different laser shots or modifications 9, which here do not overlap with their damage effect in the material. It is preferred here if the laser first moves in one direction and produces modifications 9 before reversing and writing modifications 9 in the second (lower) direction.
  • FIGS. 5a to 5d show various cooling devices 174.
  • the solid state arrangements 176 processed in these cooling devices 174 result from the various forms and configurations of the solid bodies 1 provided with one or more receiving layers 140, 146 shown and described in FIGS. 1a to 3i
  • the coolers 174 shown herein all use a gas 178 as the exit cooling medium for cooling.
  • this starting cooling medium is either atomized or vaporized.
  • the starting cooling medium is liquid nitrogen.
  • Alternative cooling methods e.g. by means of Peltier elements are also conceivable and possible.
  • the cooling device 174 preferably serves for cooling the recording layer 140, 146 to a temperature between -130 ° C and -10 ° C, in particular to a temperature between -80 ° C and -50 ° C.
  • the cooling device 174 has a nitrogen bath, wherein the receiving layer is spaced apart, in particular by means of an adjustable positioning device 180, positioned to liquid nitrogen held in the nitrogen bath.
  • the solid state assembly is preferably placed on a positioning device or on a holder over a nitrogen bath. This results in a temperature gradient over the chamber height and the temperature at the Festgroperan Aunt is on the level with the output cooling medium or the position of the solid state assembly 176 (distance to the bottom of the chamber) adjustable.
  • the cooling device can preferably have a misting agent, in particular at least or precisely a perforated pipeline, for atomizing liquid nitrogen or a misting agent for atomizing liquid nitrogen, and the cooling effect can be produced by atomised or vaporized nitrogen.
  • a misting agent in particular at least or precisely a perforated pipeline, for atomizing liquid nitrogen or a misting agent for atomizing liquid nitrogen, and the cooling effect can be produced by atomised or vaporized nitrogen.
  • a homogeneous spray device / mist sprayer is preferably provided for spraying or misting.
  • the spraying or atomizing is preferably carried out above the solid state arrangement 176.
  • temperature measurements for temperature control which output output data for regulating a valve, in particular a nitrogen valve, preferably take place. The temperature measurements are preferably carried out on the substrate or on the solid body 1 or on the receiving layer 140.
  • the substrate or the solid body 1 or the solid state arrangement 176 preferably rests above the chamber bottom in order to avoid nitrogen settling at the bottom of the chamber.
  • a perforated pipeline is preferably used as a homogeneous spray device. Furthermore, temperature measurements for temperature control, which output output data for regulating a valve, in particular a nitrogen valve, preferably take place. The temperature measurements are preferably carried out on the substrate or on the solid body 1 or on the receiving layer 140.
  • the substrate or the solid body 1 or the solid state arrangement 176 preferably rests above the chamber bottom in order to avoid nitrogen settling at the bottom of the chamber.
  • FIG. 5d shows a cooling device 176 which has a homogeneous spray device / mist collector 182 for cooling preferably several or each side. Furthermore, temperature measurements for temperature control, which output output data for regulating a valve, in particular a nitrogen valve, preferably take place. The temperature measurements are preferably carried out on the substrate or on the solid body 1 or on the receiving layer 140.
  • the substrate or the solid body 1 or the solid state arrangement 176 preferably rests above the chamber bottom in order to avoid nitrogen settling at the bottom of the chamber.
  • the chamber 184 of the cooling device 174 is preferably closed in order to reduce a temperature gradient as far as possible by insulation.
  • Fig. 6 shows three examples of preferred relationships between crystal lattice orientation and modification generation. This process is particular for the separation of solid-state layers of a SiC-containing or SiC-containing solid sense. These relationships result in a further method according to the invention.
  • This further method according to the invention is preferably used for separating at least one solid layer 4 of at least one solid 1, in particular of a wafer from an ingot or for thinning a wafer.
  • the further method according to the invention preferably comprises at least the steps of: generating a plurality of modifications 9 by means of laser beams inside the solid 1 to form a release plane 8, and introducing an external force into the solid 1 to generate stresses in the solid 1, wherein the external force is so strong that the stresses cause crack propagation along the Ablöseebene 8.
  • the modifications are produced successively in at least one line or row or line, wherein the modifications 9 produced in one row or row or line are preferably generated at a distance X and height H so that a crack propagating between two successive modifications , in particular in crystal lattice direction propagating crack, the crack propagation direction is aligned at an angle W opposite the Ablöseebene connecting the two modifications together.
  • the angle W is in this case preferably between 0 ° and 6 °, in particular at 4 °.
  • the crack propagates from a region below the center of a first modification toward a region above the center of a second modification.
  • the essential context here is that the size of the modification can or must be changed depending on the distance of the modifications and the angle W.
  • this method can also comprise the step of producing a composite structure by arranging or producing layers and / or components 150 at or above an initially exposed surface 5 of the solid 1, wherein the exposed surface 5 is preferably part of the solid layer 4 to be separated. Most preferably, the modifications to form the release plane 8 are created prior to the formation of the composite structure.
  • a receiving layer 140 are arranged on an exposed surface 5 of the composite structure or of the solid body analogously to the methods described above.
  • the three figures 6a to 6c are intended to illustrate how the size of the laser-amorphized / phase-converted damage / modification zone affects the height traveled by the sawtooth pattern of the crack.
  • the crack runs along the crystal planes that is, between individual atoms of the crystal. In the modified zone, these clear planes no longer exist, so it comes to a halt.
  • the damage zone along the beam direction can be reduced, as well as laterally in the focal plane. Since only the threshold intensity has to be reached, a smaller pulse energy is sufficient here as well.
  • the laser modifications can be made denser, which makes the saw tooth shorter and, overall, causes a smaller height expansion of the modified plane (first image).
  • the damage zone is larger (higher energy and / or lower numerical aperture - Fig. 6b) - the increased pressure of the amorphized zone also triggers a larger microcrack to trap (ie stop controlled) one with a larger area of damage allows greater distance.
  • Fig. 6c shows the danger if the damage zone is not sufficiently large and too far-reaching cracks are triggered by the laser modification, the cracks run too far on one hand - i. the difference in height caused by the cracks is greater than desired - and second, the cracks are driven under the other damage zones and not stopped by the amorphized material. This then leads again to material losses, since all torn material layers for the final product or a renewed laser processing must be removed.
  • FIG. 7 shows a schematically illustrated snapshot from a further method according to the invention.
  • This further method is preferably used for separating at least one solid state layer 4 of at least one solid 1, in particular of a wafer from an ingot or for thinning a wafer.
  • the further method according to the invention preferably comprises at least the steps of: generating a plurality of modifications 9 by means of laser beams inside the solid 1 to form a release plane 8, and introducing an external force into the solid 1 to generate stresses in the solid 1, wherein the external force is so strong that the stresses cause crack propagation along the Ablöseebene 8.
  • the modifications are generated in a first step on a line 103 and preferably at the same distance from one another. Furthermore, it is conceivable that a
  • first lines are particularly preferably parallel to the crack propagation direction us preferably rectilinear or circular arc-shaped, in particular in the same plane generated.
  • second lines 105 are preferably generated for triggering and / or driving preferably subcritical cracks. These second lines will also be preferably generated in a straight line. Particularly preferably, the second lines are inclined relative to the first lines, in particular oriented orthogonally. The second lines preferably extend in the same plane as the first lines, or more preferably in a plane which is parallel to the plane in which the first lines extend.
  • third lines are preferably generated to connect the subcritical cracks generated.
  • This method is particularly useful for the separation of solid layers of an existing from SIC or SiC solid.
  • the modifications may be generated in succession in at least one row or row or line, wherein the modifications 9 produced in a row or row or line are preferably generated at a distance X and height H, so as to propagate between two successive modifications Crack, in particular in the direction of crystal lattice propagating crack, whose crack propagation direction is aligned at an angle W opposite the Ablöseebene connecting the two modifications together.
  • the angle W is in this case preferably between 0 ° and 6 °, in particular at 4 °.
  • the crack propagates from a region below the center of a first modification toward a region above the center of a second modification.
  • the essential context here is that the size of the modification can or must be changed depending on the distance of the modifications and the angle W.
  • this method can also comprise the step of producing a composite structure by arranging or producing layers and / or components 150 at or above an initially exposed surface 5 of the solid 1, wherein the exposed surface 5 is preferably part of the solid layer 4 to be separated. Most preferably, the modifications to form the release plane 8 are created prior to the formation of the composite structure.
  • a receiving layer 140 are arranged on an exposed surface 5 of the composite structure or of the solid body analogously to the methods described above.
  • preferably lines on SiC are generated parallel to the crack propagation direction (preferably transverse lines) in order to first define a plane for the preferred crack initiation (crack initiation) before longitudinal lines drive the cracks.
  • the cracks are first initialized transversely, then longitudinally, before a final step sets lines between the longitudinal lines of the second step to trigger the cracks over the entire surface. This allows for shorter crack paths, which minimizes the final surface roughness.
  • FIG. 8 shows by way of example a Schottky diode 200.
  • this diode 200 preferably has a solid-state layer 4 which, in turn, has modified portions, in particular modifications 9, by means of laser radiation.
  • the modifications 9 are in this case generated in the vicinity of a first surface of the solid state layer 4.
  • a metal layer 20, in particular by means of sputtering or chemical deposition has preferably been produced at this first surface of the solid-state layer 4.
  • the solid state layer 4 has, compared to the first surface, a second surface on which, in particular by means of an epitaxial process, a further layer 145 is produced.
  • the solid state layer 4 preferably consists of heavily doped SiC or has highly doped SiC and the layer 145 produced preferably consists of lightly doped SiC or has weakly doped SiC. Poorly doped here means preferably less doped than highly doped. Thus, the layer 145 produced preferably has less doping per unit volume than the solid state layer 4.
  • the reference numeral 150 denotes a Schottky contact.
  • FIG. 9 shows the structure of a MOSFET 250.
  • this MOSFET 250 preferably has a solid-state layer 4 which, in turn, has modified parts, in particular modifications 9, by means of laser radiation.
  • the modifications 9 are in this case generated in the vicinity of a first surface of the solid state layer 4.
  • a metal layer 20, in particular by means of sputtering or chemical deposition, has preferably been produced at this first surface of the solid-state layer 4.
  • the metal layer 20 preferably forms a drain (high) via a connection 259.
  • the solid state layer 4 has a second surface opposite the first surface. On the second surface, a further layer, in particular n type SiC, is formed, in particular produced or arranged.
  • the reference numeral 256 denotes a further material or element, in particular p type SiC.
  • the reference numeral 254 stands for n +.
  • Reference numeral 255 preferably denotes one or more channels, in particular for conducting the current.
  • the layer / view designated by the reference numeral 253 preferably consists of SiO 2 or has such.
  • Reference numeral 251 denotes a source (low), and reference numeral 252 denotes a gate.
  • the present invention can thus relate to a method for providing at least one solid state layer 4, wherein the solid state layer 4 is separated from a solid state 1.
  • the method according to the invention preferably comprises the steps: Producing a plurality of modifications 9 by means of laser beams inside the solid 1 to form a release plane 8, 9 compressive stresses are generated in the solid 1 by the modifications, separating the solid layer 4 by a separation of the remaining solid 1 and the solid layer 4 along through the Modifications 9 formed Ablöseebene 8, wherein at least components of the compressive stresses generating modifications 9 remain on the solid state layer 4, with so many modifications 9 are generated that the solid state layer 4 due to the modifications 9 from the solid 1 detaches or wherein an external force in the solid 1 for generating further stresses in the solid body 1, wherein the external force is so strong that the stresses cause crack propagation along the release plane 8 formed by the modifications, creating a metal layer at the through the Abtr Identification of the solid state layer 4 of the solid 1 exposed surface for at least partially and preferably majority and particularly preferably complete compensation of caused by
  • the present invention may relate to a method of producing electrical components.
  • This method preferably comprises the steps of producing a multiplicity of modifications 9 by means of laser beams inside a solid 1 for forming a release plane 8, wherein the compressions are generated in the solid 1 by the modifications 9, producing a composite structure by arranging or producing layers and / or components 150 at or above an initially exposed surface 5 of the solid 1, wherein the exposed surface 5 is part of the separated solid layer 4, separating the solid layer 4 by a separation of the remaining solid 1 and the solid layer 4 along formed by the modifications 9 Ablöseebene 8, wherein at least components of the compressive stresses generating modifications 9 remain on the solid state layer 4, with so many modifications 9 are generated that the solid state layer 4 detaches due to the modifications 9 from the solid 1 or wherein e iner external force is introduced into the solid 1 for generating further stresses in the solid 1, wherein the external force is so strong that the stresses cause crack propagation along the release plane 8 formed by the modifications, producing a metal layer 20 at the through the Separation of the solid state layer 4
  • FIG. 10a shows a diagram showing a grinding tool 22 with a specific contour. If we speak of a flat, straight or curved portion in relation to the grinding tool, then this always means a proportion of the contour shown.
  • the grinding tool 22 may be formed, for example, as a rotary grinding tool, whereby the shares in the circumferential direction adjoining the contour in the circumferential direction would preferably extend bent.
  • 10a has a first processing portion 24 having a curved main grinding surface 32, and has a second processing portion 26 having a curved Mauschleif Chemistry 34, wherein the radius of the main grinding surface 32 is greater than the radius of the auxiliary grinding surface 34, preferably the radius of the main grinding surface 32 is at least twice, three times, four times or five times as large as the radius of the auxiliary grinding surface 34.
  • a method for separating at least one solid state layer 4, in particular a solid state disk or solid state layer, from a donor substrate 1 or solid body is thus additionally or alternatively provided.
  • the terms donor substrate and solid can preferably be used interchangeably. This method preferably comprises the steps:
  • the modifications 9 can be produced partially or completely before the material removal or after the removal of material.
  • the depression 6 is thus preferably narrower in the direction of the center Z as far as a depression end 18.
  • the recess is wedge-shaped, with the recess end 18 preferably lying exactly in the plane in which the crack propagates or in which the modifications 9 are produced.
  • a composite structure to be produced by arranging or producing layers and / or components 150 at or above an initially exposed surface 5 of the solid 1, wherein the exposed surface 5 is part of the solid layer 4 to be separated.
  • the modifications 9 for forming the release plane 8 are thereby preferably produced before the production of the composite structure.
  • FIG. 10b shows a representation according to which the modifications 9 shown in FIG. 10a, which represent, in particular, amorphous portions of the crystal lattice, were treated in a corrosive manner.
  • an etching treatment of non-crystalline constituents of the solid body 1 is preferably carried out, while the crystalline constituents of the solid body are not or substantially not changed by the etching treatment. It is thus preferably used the effect that etching can be selectively adjusted to crystalline - non-crystalline areas.
  • the reference numeral 19 thus indicates a region in which the solid state layer 4 is separated from the remaining residual solid by an etching treatment of modifications 9. This solution is advantageous since the mechanical crack opening is guided deeper into the crystal by the etching or etching.
  • the etching parameters are preferably selected such that non-amorphous portions, in particular a possibly polished upper side 5 and / or the unmodified edge 7 are not etched.
  • the method according to the invention in particular the method described with regard to FIG. 10a, can be supplemented, for example, by the step of etching treatment or corrosive removal of modifications 9 which predetermine the release region at least in sections.
  • the solid body 1, in particular before a composite structure is produced preferably consists of SiC or has SiC on preferably has the Solids at least 95% (by mass) or at least 99% (by mass) or at least 99.99% (by mass) SiC on.
  • the first machining portion 24 of the grinding tool 22 has a straight main grinding surface 32 and the second machining portion 26 has a straight secondary grinding surface 34, whereby more material is provided by means of the main grinding surface 32 than by the secondary grinding surface 34 Donor substrate 2 is removed.
  • FIG. 11 shows 5 diagrams showing examples of the solid-state disk production or wafer production according to the invention.
  • Representation 1 shows a grinding tool 22, which has two mutually spaced machining portions 24, each forming a main grinding surface 32.
  • the main grinding surfaces 32 are designed so that they produce 2 wells 6 in a donor substrate.
  • the grinding tool 22 is preferably designed as a rotary grinding tool or as a belt grinding tool.
  • FIG. 1 shows a dispenser substrate 2 in which recesses 6 have been produced by means of the grinding tool 22.
  • the depressions 6 are preferably uniformly spaced from each other in the longitudinal direction of the donor wafer 2, wherein it is also conceivable that the distances are different.
  • modifications 10 in the donor substrate 2 are furthermore produced by means of a LASER device 46.
  • the LASER device 46 emits for this purpose LASER rays 12, which penetrate into the donor substrate 2 via a preferably flat surface 16 of the donor substrate 2 and at a focal point 48, in particular by multiphoton excitation, a modification 10 of the lattice structure of the solid or donor substrate 2 generates or causes.
  • the modification 10 preferably represents a material conversion, in particular a transfer of the material into another phase, or a material destruction.
  • the third illustration shows that a voltage generation layer 14 has been created or arranged on the surface 16, over which the LASER rays 12 were introduced to produce the modifications 10 in the donor substrate 2.
  • the voltage generating layer 14 is thermally stressed or tempered, in particular cooled, to generate mechanical stresses in the donor substrate 2.
  • the recesses 6 previously generated form notches, by means of which the mechanical stresses can be conducted in such a way that the crack 20 resulting from the stresses spreads in a targeted manner in the tear-guiding region predetermined by the modifications 10.
  • the recess ends 18 therefore preferably adjoin the respective tear guide region defined by the modifications 10.
  • only the solid state layer 1 is always split off, the recess 6 of which is at least the distance from the voltage generation layer 14.
  • the illustration 4 shows a state after crack propagation.
  • the solid state disk 1 is split off from the donor substrate 2 and the voltage generation layer 14 initially remains on the surface 16 of the solid state disk 1.
  • the reference numeral 28 indicates which side of the solid-state disk 1 is designated here as the underside of the solid-state disk 1 and the reference numeral 30 identifies which side of the solid-state disk 1 is designated here as the upper side of the solid-state disk 1.
  • the illustration 5 shows a method in which, without a voltage generating layer 14, a detachment of the solid state layer 1 from the donor substrate 2 is effected.
  • a detachment of the solid state layer 1 from the donor substrate 2 is effected.
  • the dashed line Z preferably denotes a center or an axis of rotation of the donor substrate 2.
  • the donor substrate 2 is preferably rotatable about the axis of rotation Z.
  • Fig. 12 shows 4 illustrations.
  • a donor substrate 2 is shown, which is acted upon by laser beams 12.
  • the LASER beams 12 in their entirety are inclined with respect to the surface 16, through which the LASER rays penetrate into the donor substrate 2, that the inclination deviates from a 90 ° angle.
  • a first portion 36 of LASER beams 12 is oriented at a first angle 38 with respect to the surface 16, and a further portion 40 of LASER beams 12 is oriented at a second angle 42 with respect to the surface 16.
  • the LASER beam portions 36 and 40 are preferred for generating all modifications 12 produced to separate a particular solid body layer 1 from the surface 16 over which the LASER beam portions 36, 40 penetrate into the donor substrate 2, preferably always identically inclined.
  • the focus point 48 for generating modifications 10 due to the inclined laser beam portions 36, 40 in the donor substrate 2 can be guided to the edge 44 or directly to the edge 44.
  • the depiction 2 of FIG. 12 also shows that, according to the obliquely oriented LASER beam portions 36, 40, a material-removing treatment of the edge 44 of the donor substrate 2 is not required or only significantly reduced.
  • the voltage generating layer 14 disposed or generated on the surface 16 causes mechanical stress to be generated in the donor substrate 2, thereby causing a tear 20 to propagate very precisely guided from the edge 44 into the donor substrate 2 due to the modifications 10 produced to the edge 44.
  • the illustration 3 of FIG. 12 shows a solid disk 1 which has been split off completely from the donor substrate 2, wherein the solid state disk 1 according to this embodiment has preferably not undergone any edge treatment.
  • Representation 4 of FIG. 12 indicates that also by creating modifications 10 by means of LASER beams 36, 40 (without a voltage generation layer 14), a solid state disk 1 is removable from the donor substrate 2.
  • the present invention thus relates to a method for separating solid-state disks 1 from a donor substrate 2.
  • the method according to the invention comprises the steps of:
  • the LASER rays 12 penetrating into the donor substrate 2 via a flat surface 16 of the donor substrate 2, the entirety of the LASER rays 12 facing in this way the planar surface 16 of the donor substrate 2 is inclined so that a first portion 36 of the laser beam 12 at a first angle 38 to the flat surface 16 of the donor substrate 2 penetrates into the donor substrate 2 and at least one further portion 40 of the laser beam 12 in one second angle 42 to the flat surface 16 of the donor substrate 2 penetrates into the donor substrate 2, wherein the amount of the first angle 38 from the amount of the second angle 42 differs, wherein the first portion 36 of the laser beam 12 and the further portion 40 of the laser -Beams 12 are focused to produce the modification 10 in the donor substrate 2, wherein the FestConsequentlyschei be 1 by the generated modifications 10 detached from the donor substrate 2 or a voltage generating layer 14 at the level Surface 16 of the donor substrate 2 is generated or arranged and by applying thermal stress to the voltage
  • Fig. 13 shows a further variant of the method according to the invention. It can be seen by comparing the first and the fifth illustration that the modifications 10 produced by means of the laser beams 12 can be produced closer to the edge 44 in the case of a flat surface 16 than if the edge 17 of the surface 16 is removed as shown in the fifth illustration.
  • the LASER beams 12 penetrate into the donor substrate 2 analogously to the modification generation explained with reference to FIG.
  • the second illustration of FIG. 13 shows the formation of a depression 6 starting from a circumferential surface 4 in the direction of the center Z of the donor substrate 2, the depression being produced by means of ablation LASER rays 8 of an ablation LASER (not shown).
  • the ablation laser beams 8 preferably evaporate the material of the donor substrate 2 in order to produce the depression 6.
  • the shape of the recess is not asymmetrical but symmetrical.
  • a voltage generation layer 14 is generated or arranged on the donor substrate 2 and thermally acted upon to generate mechanical stresses for triggering a crack 20, in particular by means of liquid nitrogen.
  • Representation 4 of FIG. 13 shows the solid state disk 1 split off from the donor substrate 2, on which the voltage generation layer is furthermore arranged.
  • the representation 5 of FIG. 13 can be further deduced that in a donor substrate 2 whose edge 17 is processed, the recess 6 to be produced by means of ablation laser beams 8 must extend further in the direction of the center of the donor substrate 2, as if the edge 17 not edited.
  • the depression is produced not by means of ablation laser beams 8 but by means of a grinding tool 22 (as is known, for example, from FIG.
  • FIGS. 14a and 14b show a problem in the edge region of the donor substrate 2 which occurs when generating modifications by means of LASER rays 12. Due to the different refractive indices in the air and in the donor substrate, the LASER beam portions 38, 40 of a LASER beam 12 do not strike exactly together, causing undesirable effects such as the generation of defects at undesired locations, unwanted local heating or prevention of modification generation.
  • FIG. 14b shows that a problem-free generation of modifications 10 can only take place if the modification 10 to be produced is far enough away from the circumferential surface of the donor substrate 2 that both LASER beam portions 38, 40 are each guided by material having the same refractive index and preferably by the same path length to be broken.
  • FIG. 15 shows an arrangement according to which a LASER beam 12 is aligned parallel to the longitudinal axis L. Furthermore, this illustration additionally or alternatively shows a LASER beam 60, which is inclined at an angle a1 with respect to the longitudinal axis L. Both LASER beams 12 and 60 can serve to produce the modifications 10, by which a detachment region 11 is specified. It is conceivable here that a plurality of the modifications 10 are generated by the LASER beam 12 which is not inclined with respect to the longitudinal axis L, and in the edge region, i.
  • the modifications 10 through the longitudinal axis L inclined laser beam 60 are generated.
  • the modifications 10 in the edge region can be generated by a further LASER beam 62, 64 inclined relative to the longitudinal axis L of the donor substrate 2, this laser beam preferably passing over a circumferential surface of the donor substrate 2 into the donor substrate 2 invades.
  • LASER beam 62 e.g. at an angle a2 which is greater than 0 ° and less than 90 °, relative to the separation region 1 1 over the circumferential surface in the donor substrate 2 to produce the modifications 10 im
  • Edge region can be introduced. Furthermore, the illustration can be seen that a
  • LASER beam 64 in the extension direction of the detachment region 1 1 over the circumferential
  • the LASER beam 64 is preferably at an angle a3, between 80 ° and 100 °, in particular 90 ° or substantially 90 °, relative to the
  • one of the LASER beams 60, 62, 64 can be used to produce a modification 10 in the region of the edge.
  • FIG. 16a shows the modification region generated by means of a LASER beam 64.
  • the laser beam 64 preferably has a plurality of modifications 10 in the radial direction, in particular along a line are generated at intervals to the center or a rotation axis (which preferably extends orthogonal to the planar surface 16 of the donor substrate 2) of the donor wafer 2.
  • Fig. 16b shows schematically a state after the generation of the modifications 10.
  • the separation region 1 1 is formed in the form of a fully extending inside the donor wafer 2 modification layer according to this illustration.
  • FIGS. 17a and 17b show two variants for producing modifications 10 by means of LASER beams introduced via the circumferential surface.
  • a multiplicity of modifications 10 are produced via the same penetration point, through which the LASER rays 64 penetrate into the donor substrate 2.
  • the LASER beams are focused into the donor substrate 2 at different depths in the radial direction to produce the modifications 10.
  • the modifications 10 are generated with decreasing penetration depth of the laser beams or with decreasing distance of the focal point to the penetration point.
  • Fig. 17b shows the filamentous modification generation.
  • the modifications 10 produced in the form of filaments are more than a multiple, in particular e.g. 10 times, 20 times or 50 times, its cross-sectional extent.
  • FIG. 18 shows a LASER device 46, an aberration 47 and a sectional view of a donor substrate 2.
  • the detailed view of FIG. 18 shows the LASER beam 12 penetrating into the donor wafer 2 via the curved circumferential surface of the donor wafer 2 shown lines of the means of aberration 47 adapted radiation course is shown.
  • the present invention thus relates to a method for separating solid-state disks 1 from a donor substrate 2.
  • the method according to the invention comprises the steps of: providing a donor substrate 2, producing at least one modifications 10 in the interior of the donor substrate 2 by means of at least one LASER beam 12, wherein the LASER beam 12 penetrates via a flat surface 16 of the donor substrate 2 in the donor substrate 2, wherein the LASER beam 12 against the flat surface 16 of the Donor substrate 2 is inclined so that it penetrates at an angle of not equal to 0 ° or 180 ° relative to the longitudinal axis of the donor substrate in the donor substrate, the laser beam 12 is focused to produce the modification 10 in the donor substrate 2, wherein the solid state disk 1 through deleting the generated modifications 10 from the donor substrate 2 or creating or placing a stress generating layer 14 on the planar surface 16 of the donor substrate 2, and by applying thermal stress to the voltage generating layer 14, mechanical stresses are generated in the donor substrate 2, with a crack 20 due to the mechanical stresses to disconnect a solid state layer 1 is formed, which propagates along the modifications
  • the voltage generating layer 14 preferably has at least one recess 6, in particular a recess or trench, which preferably extends from a flat or essentially planar surface 16 in the direction of a further surface of the surface which is preferably parallel to the planar surface 16
  • Solid body 2 extends, superimposed or covered or closes.
  • the voltage generation layer 14 is preferably produced as a polymer layer or is produced as a layer which consists predominantly of mass and / or volume fractions of at least one polymer material.
  • the surface 16 on which the voltage generating layer 14 is disposed preferably has treated portions.
  • the treated parts are preferably understood as parts in which material has been removed.
  • outgoing from the surface 16 on which the voltage generation layer 14 is arranged and which preferably extends substantially or completely parallel to a tear guide layer formed from modifications 10 preferably extend indentations, in particular recesses 6 and / or trenches 6, preferably orthogonal to the surface and / or the crack guiding layer.
  • only one recess 6, in particular a trench and / or a recess has been produced by means of material removal and / or is formed.
  • the removal of material is preferably effected prior to the generation or attachment of the voltage generation layer 14 to the surface 16, in particular by means of laser ablation.
  • the voltage generation layer 14 covers in the coupled or connected to the solid state 2, the depression / s 6, in particular the trench or the trenches or the recess or the recesses.
  • no further coating in particular no further application of material. This is advantageous because otherwise material could accumulate in the recess / trench.
  • the attachment of the voltage generation layer preferably takes place by means of a plasma lamination process. This is advantageous, so that via the recess 6, in particular recess / trench, away a connection between the solid 1, in particular the main surface 16 of the subsequent solid body layer 1, and the voltage generating layer 14 can be generated.
  • the compound preferably constitutes a lamination or gluing. This is preferably implemented using cold plasma.
  • a "spontaneous split" with previously generated laser plane or crack guidance plane and depth modification can be effected by a material removal step, in particular laser ablation.
  • the voltage generation layer 14 may also be referred to as a stressor layer, in particular as a self-supporting stressor layer.
  • a self-supporting stressor layer is of decisive technical advantage over a deposited or otherwise deposited stressor layer because such stressor layers can be made in larger volumes in simpler processes in specialized higher capacity equipment and used in lamination processes which also allow higher process speeds.
  • self-supporting stressor layers can be detached from the substrate again after lamination processes even with little effort, which, for example, also causes reuse, i. the stressor layer or stress generation layer, which is impossible with deposited layers.
  • lamination processes can also be realized without adhesive processes or the like purely by surface activation, surface treatment or surface modification of the substrate.
  • the surface may be e.g. preferably by contact with, in particular in a chamber, generated ozone and / or by ultraviolet light of a specific wavelength and / or plasma processes with different species formed on the surfaces of the substrate and / or the stressor and / or in the process gas, in particular free radical, aldehyde -, and alcohol species, be activated.
  • hot plasma processes are preferred in which high temperatures are used to generate free charge carriers and free radicals in the plasma, which permits different reaction paths and chemical surface reactions for the resulting reactions on the surfaces of the substrate and the stressor layer than at lower temperatures.
  • the surface modification mechanism can differ in temperature as well as between different substrates, e.g. in SiC, in contrast to Si, the participating carbon atoms can form other surface species in the plasma treatment, which can also act as an adhesion promoter in the lamination process.
  • a cold plasma process is possible in which a plasma is not generated by annealing emission and hot tungsten filaments or similar methods, but via piezoelectric transformers at atmospheric pressure and preferably without elevated temperatures. These lower temperatures also reduce and / or alter the available reaction pathways for surface activation and surface modification for adhesion promotion in lamination processes, both on the substrate and on the stressor layer.
  • the resulting surface species thus depend on a variety of parameters and the surface activation method in particular.
  • the surface treatment or modification comprises, for example, the at least partial loading of the surface to be treated by a corona treatment and / or by a flame treatment and / or by a treatment by means of electrical barrier discharge and / or by fluorination and / or by ozonation and / or by Eximerbestahlung and or by a treatment with a plasma, wherein preferably one or more physical parameters, such as the type of plasma, the track pitch in the plasma treatment, the nozzle type, the nozzle spacing and / or the duration of the plasma treatment, are varied.
  • a plasma pretreatment or plasma treatment is used both for a purification and subsequently for a homogenization of the surface species (for example hydrophobing, inter alia).
  • a plasma pretreatment or plasma treatment is used both for a purification and subsequently for a homogenization of the surface species (for example hydrophobing, inter alia).
  • a targeted individual plasma treatment a spatially resolved variation of the surface activation can be generated or adjusted, which then permits lamination of the stressor layer - likewise with spatially variable properties, if desired.
  • the process of plasma surface activation or plasma surface treatment allows for greater leverage to apply the desired differential adhesion after lamination of the stressor layer to the substrate, even on large areas in a defined symmetric or asymmetric shape.
  • targeted, in particular local, altered adhesion or cohesion can be set by process variation.
  • layers can be applied and / or the desired additional layer (s), in particular sacrificial / damaged layers or substrate and / or stressor layer surfaces, selectively modified by further gradual process gases (oxygen, etc.). hydrophobic, hydrophilic, wetting, etc.). This leads to a spatially resolved adjusted gradual adhesion or spatially resolved adapted or adjusted force transmission connection, even in lamination processes, which is only homogeneous and not spatially resolved compared to that of adhesive and Abscheidellosungen for the Stressor harsh.
  • different physical parameters may be used during the plasma treatment (e.g., type of plasma, track pitch in the plasma treatment, nozzle type, nozzle pitch, duration of the plasma treatment).
  • a targeted admixture of gradual process gases e.g. Nitrogen, oxygen, hydrogen, SiH4, Si (EtO) 4, or Me3SiOSiMe3 (among others) a wider range of necessary surface properties can be achieved.
  • Nitrogen, oxygen, hydrogen, SiH4, Si (EtO) 4, or Me3SiOSiMe3 a wider range of necessary surface properties can be achieved.
  • These preferably result from new chemical surface species that deposit on the semiconductor surface and / or the adjoining sacrificial layers and / or the stressor layer and thus allow differently designed surface functionality and lamination process properties. This leads to the desired target profiles, such as different spatially resolved adhesion and cohesion properties, the semiconductor surfaces and / or the subsequent stressor and / or other layers.
  • Corona treatment is an electrochemical process for the surface treatment or modification of plastics.
  • Corona treatment is e.g. to
  • Adhesion mediation for plastics, foils and others used.
  • PE plastics, foils and others
  • a flame treatment is mainly a near-surface oxidation of the respective compounds to bear.
  • oxidation processes take place, by which, depending on the material and experimental conditions, various polar functional groups are formed (for example oxides, alcohols, aldehydes, carboxylic acids, esters, ethers, peroxides).
  • Dielectric Barrier Discharge (DBE) treatment is also similar to a low temperature plasma (e.g., GDMS).
  • the surface is pulsed with unipolar or bipolar pulses with pulse durations from a few microseconds down to tens of nanoseconds and single digit kilovolt amplitudes.
  • a dielectric barrier discharge is advantageous, since in this case no metallic electrodes are to be expected in the discharge space and thus no metallic impurities or electrode wear.
  • dielectric barrier discharge may vary depending on the application e.g. be that it has a high efficiency, because at the electrodes no charge carriers must emerge or enter (elimination of the cathode case, no Glühemission necessary) or that the dielectric surfaces can be modified at low temperatures and chemically activated.
  • the surface modification is preferably carried out by an interaction and reaction of the surface species by ion bombardment and the action of the ultraviolet radiation on the surface species (e.g., 80nm-350nm, incoherent light UV and VUV, by power radio frequency generators).
  • the dielectric barrier discharge finds e.g. Application for the in situ production of ozone in the treatment of drinking water and waste water, whereby the ozone causes the ozonation of the water.
  • an exposure of the surface to be treated by means of ozone takes place.
  • a surface treatment or modification by means of halogenation, in particular fluorination, causes the conversion of an element or a compound into a halide. Fluorination thus results in the introduction of fluorine into preferably organic compounds with the aid of fluorinating agents.
  • a surface treatment or modification by means of a UV treatment is preferably carried out by a Eximeric irradiation or by ultraviolet light emitting diode sources, e.g. based on aluminum nitride.
  • Eximer irradiation takes place by using at least one excimer laser.
  • Eximer lasers are gas lasers that are electromagnetic
  • Radiation in the ultraviolet wavelength range can generate. A doing this
  • the generated UV radiation is preferably in a wavelength range between 120 nm and 380 nm.
  • FIG. 20a shows an additional or alternative solution according to the invention for separating solid layers 1 or solid layers 1 from a donor substrate 2.
  • a detachment region 11 is created inside the donor substrate 2.
  • the modifications 10 are preferably to a peripheral boundary surface 50 of the donor substrate 2 spaced.
  • the modifications 10 are generated analogously to illustration 2 of FIG. It is conceivable that the LASER beams 12 from above, i. are introduced into the donor substrate 2 via the surface 16, or are introduced from below into the donor substrate 2, with the bottom on the opposite side being “above.”
  • the laser is applied from below over a surface of the solid or donor substrate which is preferably parallel or at least substantially parallel to the surface 16.
  • the path of the laser beams up to the modification generating point is preferably longer than the distance from the modification generating point to the surface 16.
  • the solid can also be rotated, ie rotated by 180 ° about a horizontal axis, and then the modifications are transferred the surface parallel to the surface 16 is brought in.
  • this variant of the modification generation or defect generation corresponds to the "bottom" variant.
  • Fig. 20b shows schematically the processing of the donor substrate 2 by means of an ablation train 22, in particular a tool for machining the donor substrate 2, such as a grinding tool 22.
  • a tool for machining the donor substrate 2 such as a grinding tool 22.
  • material in the entire area between the separation region and a to the removal region preferably removed homogeneously, in particular parallel, spaced-apart surface of the donor substrate 2 to reduce the radial extent of the donor substrate 2.
  • the material is annular, in particular with a constant or substantially constant radial extent removed.
  • Fig. 20c shows an example of a state after the removal of the material. It is e.g. conceivable that the material in the axial direction of the donor substrate 2 to the Ablöseebene or below or above is removed.
  • FIG. 20 d shows a state after separation of the solid state sheet 1 from the donor substrate 2.
  • the method according to the present invention may comprise one or more or all of the following steps:
  • the LASER beam preferably enters the donor substrate via a flat surface of the donor substrate.
  • the LASER beam is inclined relative to the, in particular flat, surface of the donor substrate or solid such that it penetrates into the donor substrate at an angle of not equal to 0 ° or 180 ° with respect to the longitudinal axis of the donor substrate.
  • the LASER beam is focused to produce the modification in the donor substrate.
  • the solid preferably has crystal lattice planes that are inclined to a major planar surface, with the major surface of the solid longitudinally delimiting the solid on the one hand, with a screen lattice normal to a major surface normal in a first direction, the modifications being variations in the material property of the donor substrate.
  • the change in the material property forms by changing the penetration of the laser radiation in the solid at least in sections a line-shaped shape, wherein the line-shaped shape can be formed as a dotted line, dashed line or solid line.
  • the linear shape or a plurality of linear shapes or all or most of the linear shapes have a length of more than 1 mm or more than 5 mm or more than 10 mm or more than 20 mm or more than 30 mm or one of up to 1 mm or up to 5mm or up to 10mm or up to 20mm or up to 30mm or up to 50mm or up to 100mm up.
  • the changes in the material property are preferably generated on a production level, in particular on at least one production level or on exactly one production level, or in one or the detachment area.
  • the crystal lattice planes of the solid body are preferably inclined relative to the generation plane or the detachment region.
  • the line-shaped shape is preferably inclined to a cut line resulting at the interface between the generation plane or the separation region and the crystal lattice plane. Due to the changed material property of the solid ruptures preferably in the form of subcritical cracks. Furthermore, the separation of the solid state layer is preferably carried out by introducing an external force into the donor substrate for joining the subcritical cracks, or so much material on the generation plane or in the separation region is changed by means of the load radiation that the solid state layer separates from the donor substrate with connection of the subcritical cracks ,
  • FIG. 21 schematically shows that laser radiation 14 (see FIG. 27c) of a laser is introduced via a main surface 8 into the interior of the solid 1 for varying the material properties of the solid 1 in the region of at least one laser focus, the laser focus being transmitted through the laser Laser emitted laser beams of the laser is formed.
  • the change in the material property forms by changing the penetration of the laser radiation into the donor substrate 1 a linienformige shape 103, the changes in the material property on at least one, in particular the same, generation level 4 are generated.
  • the crystal lattice planes 6 of the donor substrate 1 are inclined relative to the production plane 4, in particular at an angle between 3 ° and 9 °, preferably of 4 ° or 8 °, aligned.
  • the linear shape 103 or writing line is inclined with respect to a cut line 10 that results at the interface between the generation plane 4 and the crystal lattice plane 6. Due to the changed material property, the donor substrate 1 breaks in the form of subcritical cracks. A step of separating the solid state layer 2 by introducing an external force into the donor substrate 1 for joining the subcritical cracks is not shown here. Alternatively, so much material can be changed on the production level 4 by means of the load radiation, that the solid state layer 2 separates from the donor substrate 1 with the connection of the subcritical cracks.
  • the processing takes place in the form of generating line-shaped figures 103 or writing lines or lines, which are formed by setting individual laser shots at a defined distance.
  • the production of a wafer of silicon carbide of polytype 4H with a 0001 surface with / without doping with an off-angle in crystal axis of> 0 ° (industry standard are 4 ° or 8 ° - around the direction of a major axis) is possible. Since the glide plane of the hexagonal crystal structure is parallel to the 0001 plane, there is an intersection line of the 0001 crystal plane with the wafer surface, since it is inclined relative to the off-angle relative thereto.
  • the basic idea of the new method is thus that the machining direction of the laser lines 103 deviates from the direction of this cutting line. Likewise, the machining direction should preferably not run along one of the principal directions of the crystal or along the intersection of the preferred slip plane of the crystal with the surface of the crystal.
  • Silicon carbide of polytype 4H has a hexagonal crystal system with a wurtzite structure and a sixfold symmetry in the 0001 plane. Accordingly, every 60 ° there is a new major axis of the crystal.
  • the sixfold symmetry is found on rotation around the surface normal. This results in a line writing direction, which rotates by 30 ° to the respective main axes and is thus oriented between two main axes.
  • Silicon carbide of polytype 4H is often cut at an off-angle of 4 ° relative to the 0001 plane to facilitate epitaxial steps in later processing. This shows that the projection of the main axes of the crystal continues to each other nearly 60 ° to each other, which is why 30 ° +/- 3 ° preferred writing angle for the inventive processing.
  • Cubic SiC behaves like cubic crystal systems, so has the preferred sliding plane, the 1 1 1 plane, resulting in a preferred line writing direction of 22.5 ° +/- 3 °.
  • the preferred sliding plane for silicon with its cubic structure is the 1 1 1 plane which intersects the wafer surface at 45 ° to the major crystal axes. This results in a desired line writing angle of 22.5 ° +/- 3 ° to the main axes of the crystal and the intersection line of the sliding plane with the wafer surface, which are oriented to each other at 45 ° angle.
  • the resulting 60 ° angle for the major axes of the crystal gives a preferred line direction of 30 ° + / -3 ° to the main axes.
  • the resulting 60 ° angle for the major axes of the crystal gives a preferred line direction of 30 ° +/- 3 ° to the Main axes for so-called C-Plane sapphire.
  • the major axis orientation is at a 90 ° angle, with a 180 ° symmetry, resulting in a preferred line writing angle of 45 ° +/- 3 °.
  • Sapphire C-Plane substrates are cut to show six-fold symmetry at the surface and the surface coincides with the slip plane, so an angle of 30 ° +/- 3 ° is preferred.
  • the major axis orientation is at 90 °, with a 180 ° symmetry, resulting in a preferred line writing angle of 45 ° +/- 3 °.
  • R-Plane sapphire has no rotational symmetry, but major axis projections at 45 ° to the projection line of the slip plane, which is why here 22.5 ° +/- 3 ° writing direction is preferred.
  • the preferred angle of 90 ° for the major axes of the crystal is a preferred line direction of 22, 5 ° +/- 3 ° to the major axes of the substrate or donor substrate 1 having a 100 surface area.
  • the resulting angle of 90 ° for the major axes of the crystal is one preferred line direction of 22.5 ° +/- 3 ° to the major axes of the substrate with a 100 surface area.
  • the resulting angle of 90 ° for the major axes of the crystal results in a preferred line direction of 22, 5 ° +/- 3 ° to the major axes of the substrate with a 100 surface.
  • the preferred angle of 90 ° for the major axes of the crystal is a preferred line direction of 22, 5 ° +/- 3 ° to the major axes of the substrate with a 100 surface.
  • a preferred line direction results from the resulting angle of 90 ° for the major axes of the crystal of 22.5 ° +/- 3 ° to the major axes of the substrate with a 100 surface area.
  • FIG. 22 shows an essential step of the method according to the invention for separating at least one solid-state layer 2 from a donor substrate 1 and a geometric derivation of the alignment of the writing line 103 and the orientation of the linear shape.
  • the method according to the invention may also or alternatively comprise the following steps:
  • the donor substrate 1 has crystal lattice planes 6 which are inclined with respect to a flat main surface 8, wherein the
  • Material properties of the solid in the range of at least one laser focus wherein the laser focus is formed by laser radiation emitted by the laser of the laser, wherein the change in the material property by changing the penetration of the
  • Laser radiation into the donor substrate 1 forms a linear shape, wherein the line-shaped shape preferably extends at least partially rectilinear and wherein the linear shape, in particular at least the rectilinearly extending portion is generated parallel to the main surface 8 and thereby in a second direction which is inclined at an angle other than 90 ° with respect to the first direction, whereby the substrate material 1 is torn by the changed material property in the form of subcritical cracks, separating the solid layer by introducing an external force into the donor substrate for joining the subcritical Cracks or so much material on the production plane is changed by means of the load radiation that separates the solid layer from the donor substrate with connection of the subcritical cracks.
  • the main surface is preferably part of the separated solid state layer 2.
  • the second direction is preferably inclined relative to the first direction in an angular range between 45 ° and 87 °, in particular in an angular range between 70 ° and 80 ° and preferably at 76 °.
  • FIG. 23 shows that the line-shaped shape 103 or the writing line is inclined with respect to the ends of the crystal lattice plane or, as shown in FIG. 22, with respect to a cutting line 10 or intersecting line that arises at the interface between the generation plane 4 and the crystal lattice plane 6.
  • This orientation limits crack growth in the direction of the crystal lattice planes 6 (in particular slip planes).
  • the modifications 9 per writing line are thus not generated in the same crystal lattice planes 6.
  • the first 1-5% of the modifications per writing line 103 can thus only a fraction, in particular less than 75% or less than 50% or less than 25% or less than 10% or no crystal lattice planes, the last 1-5% of the modifications the same writing line 103 in the substrate longitudinal direction L intersect.
  • modification 9a intersects the crystal lattice planes 6a-6c and the modification 9b intersects the crystal lattice planes 6a, 6d and 6e.
  • two modifications 9a and 9b although forming part of the same linear shape 103, respectively, intersect different crystal lattice planes.
  • the modifications 9c and 9d preferably intersect other, in particular majority or completely different, crystal lattice planes (6d, 6f, 6g, 6f, 6h, 6i) than the modification 9a (6a, 6b, 6c).
  • the ends 7 of the crystal lattice planes 6 ending on the main surface 8 preferably form a kind of sawtooth pattern in a microscopic sectional representation.
  • the individual crystal lattice planes 26a-26i are preferably inclined at an angle between 2 ° and 10 °, in particular between 3 ° and 9 °, such as 4 ° or 8 °, with respect to the longitudinal axis L.
  • the individual crystal lattice planes of the donor substrate 1 are aligned parallel to one another.
  • Fig. 24 shows an example of a sliding-gate crystal lattice for 4HSiC
  • Fig. 5a shows an example of a crystal lattice with slip plane 1 10 for Si
  • FIG. 5b shows an example of a sliding-plane crystal lattice 100 for Si
  • FIG. 5c shows an example of a lattice-plane crystal lattice 1 1 1 for Si.
  • the crystal lattice planes 6 are slip planes of a certain type. If the crystal structure is cubic-surface-centered, then the sliding plane is preferably the plane ⁇ 1 1 1 ⁇ and the sliding direction is the direction ⁇ 1 10>. If the crystal structure is cubic space-centered, then the sliding plane is preferably the plane ⁇ 1 10 ⁇ and the sliding direction the direction ⁇ 1 1 1> or the sliding plane is preferably the plane ⁇ 1 12 ⁇ and the sliding direction is the direction ⁇ 1 1 1> or Sliding plane is preferably the plane ⁇ 123 ⁇ and the sliding direction is the direction ⁇ 1 1 1>.
  • the sliding plane is preferably the plane ⁇ 0001 ⁇ and the sliding direction is the direction ⁇ 1 120> or the sliding plane is preferably the plane ⁇ 1010 ⁇ and the sliding direction is the direction ⁇ 1 120> or the sliding plane is preferred Level ⁇ 101 1 ⁇ and the sliding direction is the direction ⁇ 1 120>.
  • FIGS. 26a to 27a show diagrammatically the generation of a linear shape 103 by means of a laser or laser device in a dispenser substrate 1.
  • the linear shape 103 is generated in an arcuate or bent manner.
  • the laser device or the location of the modification generation preferably does not change. That the location of the modification generation and the rotation center 50 of the rotator 45 preferably remain in the same orientation with respect to each other. Thus, preferably only one movement of the donor substrate 1 past the laser device 29 or past an outlet for laser radiation 32 passes by.
  • the donor substrate 1 is preferably arranged on the rotation device in such a way that the line-forming ends 7 of the crystal lattice planes 6 are inclined relative to a direction 52 extending orthogonal to the connection path 51 between the rotation center 50 of the rotation device 45 and the center 49 of the donor substrate 1, in particular at an angle between 3 ° and 87 ° and preferably at an angle between 10 ° and 60 ° or 14 ° and 45 °, are aligned.
  • angles are preferably determined in such a way that the centers of two adjacent modifications are connected with each other in an intellectual way and the angle of the resulting path relative to the cutting line 10 or to a line formed by the end 7 of a crystal lattice plane 6 is determined.
  • the ideal writing angle for an array of rotating substrates is chosen to be the average angle between the angle of the tangents on the wafer edge and the tangent in the wafer center, i. for SiC 30 ° mean angle, e.g. - depending on the radius of the rotary table and the substrate radius' - an angular interval between 25 ° and 35 °, which is e.g. a preferred writing angle of 30 ° for hexagonal systems is maintained on average.
  • FIG. 27b shows a plan view of a rotation device 45.
  • a multiplicity in particular more than 2 or more than 3 or more than 5 or more than 10, preferably up to 15 or up to 20 or up to 30, donor substrates can be provided on this rotation device 45 , in particular boules or ingots or wafers, be arranged at the same time.
  • FIG. 27c shows a schematic side view of a system for producing modifications 9 in the interior of a donor substrate 1 or solid.
  • an element 29 of a laser device in particular a laser head, or a laser conductor connected to a laser beam at a movement or Umpositionieinnchtung 30, which is preferably arranged spatially fixed, arranged.
  • the movement or Umpositionieinnchtung 30 preferably allows moving the element 29 of the laser device or moving the laser device in the preferred linear direction, in particular in the radial direction of the rotating device 45.
  • the element 29 of the laser device or the laser device after generating a or several defined writing lines 103 on preferably several or all donor substrates 1 repositioned.
  • the emitted laser beams are introduced into the respective donor substrate 1 at a different location 5 for the generation of modification.
  • a defect generating device 18 or modification generating device is shown, which however is designed such that it preferably generates the modifications 34 at least in sections in mutually different planes, as a result of which at least sections one or more Crack guide layers 8 are generated, which correspond to the surface or the contour of the surface of a three-dimensional body.
  • an immersion liquid 54 is applied as drops or, as shown, as a liquid layer on the exposed surface of the solid 1. If the immersion liquid 54 is provided as a liquid layer, then preferably a wall means 50 is provided for forming a receptacle so that the liquid is held at the desired position. Furthermore, a cover plate 52 may be applied to the liquid, in particular laid on or immersed.
  • the immersion liquid 54 preferably has substantially or exactly the same refractive index as the solid 1.
  • the refractive index of the cover plate may deviate from the refractive index of the immersion liquid or also coincide therewith. It is therefore particularly preferably conceivable that, in particular to compensate for surface roughness, the defect is generated by the immersion liquid 54 and particularly preferably by the immersion liquid 54 and the cover plate 52 therethrough.
  • the focus of the laser 18 is preferably computer-controlled for defect generation.
  • FIG. 28 b shows a further arrangement according to which a crack guiding layer 8 is produced in an inclined solid 1, in particular an ingot, for detaching an uneven solid layer 4 or an uneven solid 40.
  • an immersion liquid 54 is preferably provided. The as drops or, as shown, as a liquid layer on the exposed surface of the solid 1 is applied. If the immersion liquid 54 is provided as a liquid layer, then preferably a wall means 50 is provided for forming a receptacle so that the liquid is held at the desired position. Furthermore, a cover plate 52 may be applied to the liquid, in particular laid on or immersed.
  • the immersion liquid 54 preferably has substantially the same or exactly the same refractive index as the solid 1.
  • FIG. 29a shows a solid 2 or a substrate which is arranged in the region of a radiation source 18, in particular a laser.
  • the solid body 2 preferably has a first planar surface portion 14 and a second planar surface portion 16, wherein the first planar surface portion 14 is preferably aligned substantially or exactly parallel to the second planar surface portion 16.
  • the first planar surface portion 14 and the second planar surface portion 16 preferably define the solid 2 in a Y-direction, which is preferably oriented vertically or vertically.
  • the flat surface portions 14 and 16 preferably extend in each case in an XZ plane, wherein the XZ plane is preferably aligned horizontally.
  • the first and / or the second surface portion 14, 16 has an uneven, in particular curved, shape.
  • the radiation source 18 emits steel 6 onto the solid 2.
  • the beams 6 penetrate deeply into the solid body 2 and generate a crystal lattice modification 19, in particular a defect, at the respective position or at the respectively predetermined position.
  • so many modifications or crystal lattice modifications 19 are produced that at least one detachment region 8 is predetermined by them.
  • the detachment region 8 preferably has an uneven contour or uneven shape, wherein the detachment region 8 particularly preferably has, at least in sections, a spherical, in particular corrugated and / or arched and / or curved, shape.
  • the beams 6 may be e.g. for focusing or bundling through optics, which is preferably arranged between the radiation source 18 and the solid 2 (not shown).
  • the reference numeral 9 designates another separation region in the solid 2.
  • the further separation region 9 can also be generated during the generation of the separation region 8.
  • the further detachment region 9 is generated after or before the generation of the detachment region 8.
  • the further separation region 9 is produced after the separation of the solids content 4 or before the separation of the solids content 4.
  • a plurality of solid portions 4, 5 are defined by a plurality of detachment areas 8, 9 in a solid body 2, which solids are preferably separable from the solid body 2 one after the other.
  • exactly or at least or at most one separation region 8 is produced in a solid 2.
  • FIG. 29b shows a multilayer arrangement, wherein the solid body 2 contains the detachment area 8 and is provided with a holding layer 12 in the area of the first area portion 14, which in turn is preferably overlaid by a further layer 20, wherein the further layer 20 is preferably a Stabilization device, in particular a metal plate, is.
  • a receiving layer in particular a polymer layer 10
  • the receiving layer 10 and / or the holding layer 12 preferably consist at least partially and particularly preferably completely of a polymer, in particular of PDMS.
  • the receiving layer 10 may be e.g. is produced by epitaxy on the surface of the solid 2.
  • the produced receiving layer 10 and the solid body 2 preferably have mutually different coefficients of thermal expansion.
  • cooling of the created multilayer arrangement preferably takes place, resulting in stresses due to the different coefficients of thermal expansion, through which the solids content 4 of the solid body 2 along the separation region 8 is separated or detached.
  • Fig. 29c a state after a crack initiation and subsequent cracking is shown.
  • the solid state layer 4 adheres to the polymer layer 10 and is spaced from the remainder of the solid 2 and spaced apart.
  • different detachment areas 8, 9 can have different shapes or contours. Furthermore, it is conceivable that e.g. the second surface portion 16, which is a surface of the later separated solid portion 4, 5, is brought into a different shape before the separation of the solid portion 4, 5. This change in shape can be carried out analogously to the separation of the solids content 4, 5 or by a machining, in particular a grinding process can be effected.
  • the present invention thus relates to a method for producing solid-state layers.
  • the inventive method comprises at least the steps of providing a solid 2 for separating at least one solid layer 4, generating modifications such as crystal lattice defects by means of at least one modifying agent, in particular a radiation source, in particular at least one laser, in particular at least one fs laser or ps Laser or ns laser, in the inner structure of the solid to specify at least one separation region 8, 9, along which the solid-state layer s 4, 5 separated from the solid 2 will be.
  • at least one modifying agent in particular a radiation source, in particular at least one laser, in particular at least one fs laser or ps Laser or ns laser
  • the method according to the invention preferably comprises the step of thermally loading a polymer layer 10 arranged on the solid body 2 for, in particular, mechanical, generating stresses in the solid body 2, wherein a crack propagates through the stresses in the solid body 2 along the detachment region 8 the solid state layer 4 is separated from the solid 2.
  • FIGS. 30a and 30b examples of the generation of a detachment region 8 shown in FIG. 33a by the introduction of modifications 19, in particular defects or defects, into a solid 2 by means of laser beams 6 are shown.
  • Fig. 30a is thus shown schematically how modifications 19 in a solid state 2, in particular for generating a separation region 8 by means of a radiation source 18, in particular one or more lasers, in particular one or more fs laser can be generated.
  • the radiation source 18 emits radiation 6 having a first wavelength 30 and a second wavelength 32.
  • the wavelengths 30, 32 are matched to one another or the distance between the radiation source 18 and the detachment region 8 to be generated is tuned such that the waves 30 , 32 substantially or exactly on the separation region 8 in the solid 2, whereby a defect is generated at the location of the coincidence 34 due to the energy of both waves 30, 32.
  • Defective generation can be achieved by different or combined decomposition mechanisms, e.g. Sublimation or chemical reaction, decomposition being e.g. thermally and / or photochemically initiated.
  • FIG. 30b shows a focused light beam 6 whose focal point is preferably in the detachment region 8. It is conceivable here that the light beam 6 is focused by one or more focusing bodies, in particular lens / s (not shown).
  • FIG. 31 a shows an uneven solid fraction 4 or an uneven wafer according to the invention, wherein the solid fraction 4 or the wafer 4 forms a warp as shown or shows a warp shape in cross-section.
  • the solid fraction 4 has two mutually negatively formed surface contours or surface shapes.
  • the surface contours or surface shapes of the two opposite main surfaces 40, 42 of the solid portion 4 are not formed negative to each other, but have different contours or shapes.
  • FIG. 31 b shows the production of a coating 50, in particular an epitaxially produced layer.
  • the coating 50 is preferably at a temperature of above 50 ° C, in particular above 100 ° C or above 150 ° C or above 200 ° C or above 300 ° C or above 400 ° C, arranged or generated on the solid fraction 4. It is conceivable here that the coating 50 is arranged or produced substantially or with a constant thickness on the solids content 4. Alternatively, however, it is also conceivable that the coating 50 has locally different thicknesses.
  • the further treatment thus preferably represents the arrangement or generation of a defined coating 50 on at least one surface 40, 42 of the solid fraction 4.
  • the predetermined parameters preferably comprise at least data, by which, at least indirectly, the thermal expansion coefficients of the material of the solid fraction 4 and of the coating Be included or predetermined by the deformation of the solid state portion 4 due to a defined temperature of the solid 50 provided with the coating portion 4.
  • FIG. 31c a situation after the production or arrangement of the coating 50 is shown on at least one surface 40, 42 of the solid portion 4, wherein the shape of the generated multi-component assembly 39 has changed due to different thermal expansion coefficients.
  • at least one of the main surfaces 40 and 44 of the multi-component arrangement 39 or multilayer arrangement is converted into a plane or substantially planar form.
  • the deformation preferably results from a preferably defined temperature control, in particular heating or cooling, of the multilayer arrangement 39.
  • the solid fraction 4 is thus according to the invention in such a manner depending on the downstream treatment process, in particular Besch ichtungs compiler designed, that the shape of one or both main surfaces 40, 42 of the solid portion 4 as a result of the treatment, in particular the coating process, defined changes, in particular flattening or just forms ,
  • the coating is particularly preferably a metal layer or a semiconductor layer, in particular a gallium nitride layer (GaN) or silicon layer, which is arranged or generated on a solids content of silicon, sapphire, silicon carbide (SiC) or gallium arsenide (GaAs).
  • FIG. 32 shows a laser application device 8 according to the invention, as is preferably provided in the method according to the invention and the device 30 according to the invention for producing modifications 2 in a solid body 1.
  • the laser application device 8 has at least one laser beam source 32, in particular with focus marking.
  • the laser beam source 32 may thus be concretely a coaxial light source with focus mark.
  • the light beams 10 generated by the laser beam source 32 are preferably on a predetermined path from the laser beam source 32 to a focus device 44 and a Adjustment device 44 for setting a focus size and a focus position in the solid state 1 passed.
  • the adjusting device 44 may preferably be a fine focusing device, in particular in the Z direction or in the laser beam direction.
  • the adjusting device 44 may be formed as a piezofocusing device.
  • the laser beams 10 which have passed through the adjusting device 44 preferably pass through a microscope with a long working distance 46.
  • the laser radiation is particularly preferably adjusted or adjusted or modified by the microscope with the long working distance 46 and the adjusting device 44 in such a way that the modification 2 at the predefined position is generated. It is conceivable here that the modification 2 is produced at a position which deviates, for example, from less than 5 ⁇ m and preferably less than 2 ⁇ m and particularly preferably less than 1 ⁇ m from the predefined location or is spaced therefrom.
  • the adjusting device 44 is preferably controlled by means of a control device 14, wherein the control device 14 preferably the relative position and orientation of the solid 1 relative to the laser application device 8 or the distance of the current surface portion is to be introduced into the laser radiation to the laser application device 8 and the local refractive index or Average refractive index of the solid state material and the processing depth of the solid body 1 at the respective location for the adjustment of the laser application device 8, in particular at least the setting device 44, calculated or determined or used.
  • the control device 14 can acquire or receive the required data in real time through corresponding and thus communicatively connected sensor devices or sensor means.
  • the parameters refractive index and processing depth before the beginning of processing, an analysis of the surface is made or carried out, via which the laser beams 10 penetrate into the solid body 1 to produce the modifications 2.
  • the parameters can then be stored in the form of corresponding location-dependent data in a memory device or a data memory 12 or read therein.
  • the data memory 12 can be part of the laser application device 8 as a removable medium, in particular a memory card, or as a permanently installed memory.
  • the data memory 12 is arranged outside the laser application device 8 and at least temporarily communicable with the laser application device 8 is connectable. Additionally or alternatively, the controller 14 may be specified by a user 52 workflows or changes in the workflow. Furthermore, it is conceivable that the data memory 12 is formed as part of the control device 14. Additionally or alternatively, by means of a sensor device 16 distance data for the distance between predetermined Surface points of the solid 1 and the laser applying device 8 are detected. This distance data is preferably likewise provided to the control device 14 for processing.
  • the laser beam application device 8 has a camera 34, in particular a coaxial focus camera.
  • the camera 34 is preferably arranged in the direction of the beam path of the laser beams 10 emerging from the laser application device 8.
  • an optical element 36 is arranged in the optical field of the camera 34.
  • the laser beam 10 is introduced into the optical field of the camera by the optical element 34.
  • a further optical element 38 or a diffractive optical element, in particular a beam splitter 38 is provided.
  • part of the laser beam 10 can be diverted or separated from the main beam by the beam splitter 38.
  • the separated or rejected portion of the laser radiation can be modified by an optional spherical aberration compensation 40 and / or by an optional beam extension 42 or beam expansion.
  • the reference numeral 48 denotes a preferably provided fluid supply device 48, in particular for providing a cooling fluid.
  • a temperature control, in particular cooling, of the solid 1 and / or of the microscope can be effected by means of the fluid supply device 48.
  • Reference numeral 50 denotes a refractive index determining means which can preferably also analyze transparent and reflective surfaces.
  • the refractive index determination preferably takes place with the refractive index determination means 50 in the preliminary stage of the modification generation. In this case, it is alternatively conceivable that the refractive index determination is carried out on another system and the acquired data is supplied to the present laser application device 8 by means of data transfer.
  • the dot lines with an arrow end shown in FIG. 32 preferably identify data and / or signal transmissions.
  • 33a schematically shows a preferred arrangement of the device components laser application device 8, receiving device 18 and drive or traversing device 22 of the device 30. It can be seen that the solid body 1 according to FIG This arrangement is preferably arranged between the receiving device 18 and the laser application device 8. Preferably, the solid body 1 is glued to the receiving device 18, wherein it is also conceivable that it is pressed against it.
  • Fig. 33b shows an arrangement after the generation of the modifications 2 and after the complete generation of the crack guide region 4.
  • a recording layer or Polymer layer 26 is arranged or formed.
  • a functional fluid source which outputs the functional fluid 56 is characterized by the device 54.
  • the functional fluid 56 is preferably liquid nitrogen.
  • the functional fluid 56 thus cools the receiving layer 26 to a temperature below 20 ° C., in particular to a temperature below 10 ° C. or to a temperature below 0 ° C. or to a temperature below the glass transition temperature of the polymer material of the receiving layer 26 As a result of the cooling of the receiving layer 26, high mechanical stresses are generated, through which crack propagation takes place along the crack guide region 4.
  • FIG. 34 a shows, purely by way of example, the relationship between a surface profile of a solid 1 and the refractive index of the solid-state material.
  • the values given on the horizontal axis are in the unit ⁇ .
  • FIG. 34b shows exemplary deviations of the material to be lasered (surface profile and lateral refractive index profile) and laser focus position (no AF: without autofocus, surface profile is written into the material inversely by refractive index, a standard AF reverses this inversion, so that the surface profile is n nAF: considers the substrate refractive index or refractive index as a fixed factor so that the surface profile is transferred 1: 1 into the material
  • AAF the desired advanced autofocus function can, with knowledge of the mean substrate refractive index and the target depth, be an exactly horizontal plane write in the material).
  • FIG. 35a shows various control positions of the laser focus.
  • the values given on the horizontal axis are in the unit ⁇ .
  • the waveform can be determined as a control input for the position of the laser head in different cases: nAF (n-aware AF): to correct the autofocus guide size of the surface by the mean substrate refractive index (n).
  • nAF n-aware AF
  • the surface deviation 1 1 ins Volume to be transferred.
  • TTV thickness fluctuations
  • AAF advanced AF
  • the split-off wafer will have one-sided plan but greater thickness deviation directly after the split.
  • AnAF Advanced n-aware AF: to correct the autofocus guide size of the surface with knowledge of the local substrate refractive index and the level of compensation of the surface.
  • the present invention thus relates to a method for producing modifications in a solid body, wherein a tear guide region for guiding a crack for separating a solid portion, in particular a solid layer, from the solid is predetermined by the modifications.
  • the method according to the invention preferably comprises one or more or all of the following steps: moving the solid relative to a laser application device, sequentially generating a plurality of laser beams by means of the laser application device to generate at least one modification, the laser application device for the defined focussing of the laser beams is continuously adjusted in dependence on a plurality of parameters, in particular at least two parameters.
  • a planar microfocus for multi-photon material processing in volume is made possible by the inventive method.
  • Fig. 35b shows two gradients representing profiles of different modification distributions.
  • Fig. 36a shows a Raman instrument.
  • the Raman instrument 58 shown here has a laser 60 for emitting radiation.
  • the radiation is preferably supplied by means of at least one optical fiber 61 for excitation preferably an optical system and preferably focused by this optics, in particular lens 64, in particular focused in the solid.
  • This radiation is at least partially scattered, whereby 62 light components are preferably filtered out by means of a filter device or excitation filter, which are the same Have wavelength as the radiation emitted by the laser.
  • the other radiation components are then fed to a spectrograph 68 and detected by means of a camera device, in particular a CCD detector 70, and evaluated or processed by a control device 14, 72, in particular a computer.
  • atom vibrations in the crystal are preferably excited by a preferably external or particularly preferred further laser. These vibrations are generated by light scattering on crystal atoms, resulting in observable scattered light, which has a photon energy varied by the amount of vibrational energy. With several excitable vibrations also occur several peaks in the spectrum of the scattered light. With a spectrometer (grating spectrometer) then the resulting Raman scattering spectrum can be further investigated (so-called Raman spectroscopy). In this method the local conditions in the crystal are impressed on the individual Raman lines and the degree of doping can be deduced by an analysis of the shape of the Raman line.
  • Figure 36b shows what possible lattice vibrations in SiC look like, these modes being dictated by crystal symmetry and directions, and may also be excited simultaneously.
  • the views shown have an extension along the crystal axis A.
  • vibrations of the atoms are possible only in certain directions, the directions being given by the symmetry of the crystal.
  • FIG. 37a shows a section of a Raman curve of a nitrogen-doped 4H silicon carbide solid (example spectrum for Raman on doped SiC).
  • FIG. In this case, the shape of the LO (PC) mode is used to measure the doping concentration and fitted.
  • Fig. 37b shows a smaller section of the Raman curve.
  • a direct method results for determining the dopant concentration with Raman measurements from a measurement of the shape and the following fit to the LO (PC) mode.
  • FIGS. 38a and 38b show two possibilities for designing the lifting of individual wafers from the boule / ingot.
  • this is configured as a feedforward loop and according to FIG. 38b as a feedback loop.
  • Feedforward is preferably carried out at the ingot / boule.
  • a feedback loop may be implemented according to which the resulting wafer is characterized after each separation step and serves as a template for the next one.
  • Modification clusters has. It is conceivable that a plurality of regions with different modification concentrations form a release plane 8, wherein it is also conceivable that the modifications 34 in the release plane 8 are distributed substantially or exactly uniformly over the surface.
  • Modification concentrations may be the same size or different in size.
  • a first increased modification concentration may be the same size or different in size.
  • Crack initiation concentration 82 which is preferably generated in the region of the edge or extending to the edge or the edge adjacent. Additionally or alternatively a crack guiding concentration 84 are formed such that the crack separating the solid-state layer 4 from the solid 2 can be controlled or controlled. Furthermore, additionally or alternatively, a center concentration 86 can be generated, which preferably allows a very flat surface in the region of the center of the solid 2.
  • the crack guiding concentration 84 is partially or completely formed annularly or enclosing and thus preferably encloses sections and more preferably completely the center of the solid 2 and the solid layer 4.
  • the crack guidance concentration 84 in a starting from the edge of the solid second and gradually decreases in the direction of the center of the solid 2 or continuously or fluently. Furthermore, it is conceivable that the crack guidance concentration 84 is formed band-like and homogeneous or substantially or exactly homogeneous.
  • a plan view of a solid 2 is shown schematically in the upper part of the picture and in the lower part of the image is a side view, in particular a sectional view shown.
  • the solid 2 is provided in this illustration with straight lines, which the individual juxtaposed solid state elements 40, in particular support elements, such. Computer chips or solar cells, limit.
  • the lines can describe here purely by way of example and for explanatory purposes the outer shape of the solid state elements 40, wherein they need not or not necessarily be present or present in a real solid 2.
  • a multiplicity of defects 34 can be seen in each case from the plan view and the side view.
  • the modifications or defects 34 as shown for example in the plan view, be evenly distributed or increased in certain areas or reduced generated.
  • a high concentration of modifications or defects 34 compared to a low concentration of defects 34 for example, enables a defined crack initiation and / or a simpler detachment of the solid-state layer 4 in the respective region.
  • an increased concentration of defects 34 is provided in the region of a point of the solid 2 at which a crack is to be triggered.
  • defects 34 are preferably given in an increased concentration to direct crack propagation.
  • the release plane 8 is preferably formed by defects 34 generated in a plane.
  • the plan view of FIG. 41 shows, in addition to the defects 34 forming the first release layer 8, further defects produced in second release planes 50, which are shown by dashed lines and extend in the Z-direction. Furthermore, dashed lines oriented in the X direction are shown, which also represent defects and lie in third release planes 52.
  • the first release plane 8 is thus preferably in the XZ plane
  • the second release plane 50 is preferably in the YZ plane
  • the third release plane 52 is preferably in the xY plane.
  • the defects ie defects for generating the first release layer 8 and the defects for generating the second release layer 50 and the third release layer 52 with respect to a planar surface of the solid 2, in particular a lying in an XZ plane surface of the solid 2, are spaced at different distances.
  • FIG. 42a shows a plan view according to which the defects 34 for generating the second release plane / n 50 have already been produced. However, the defects 34 for forming the third release plane / n 52 are not yet generated. It is thus conceivable that the defects for generating the second and third detachment levels / n 50, 52 are generated simultaneously, with a time delay or completely one after the other. Furthermore, it can be seen from the side view or sectional illustration that the defects for generating the second release plane / n 50 can be generated at different distances to a surface extending in the X-Z plane.
  • the defects for producing the first release layer 50 and the second release layer 52 in their entirety can also be generated with the same distance to a surface extending in the X-Z plane.
  • FIG. 43 shows an embodiment according to which the solid state layer 4 is arranged on the polymer layer 10. It is conceivable here that the defects for producing the second release layer 50 and the third release layer 52 are already produced in the solid state layer 4. Furthermore, it is alternatively conceivable that the defects for generating the second release layer 50 and the third release layer 52 are generated only after the removal of the solid state layer 4 from the solid 2 in the solid state layer 4.
  • FIG. 44 a shows an arrangement according to which the solid-state layer 4 is arranged on the polymer layer 10 or the solid-state layer 4 with the polymer layer 10, in particular adhesive, connected.
  • the polymer layer 10 is deflected in a first direction 60 and / or in a second direction 62 and / or bent around at least one axis.
  • the deflection of the polymer layer 10 can be effected by thermal effects and / or external application of force, in particular stretching, compression and / or bending.
  • the individual solid state elements 40 are detached in the region or along the second release plane 50 and / or the third release plane 52.
  • the detachment preferably corresponds to one Abort or departure of the individual solid state elements 40 from each other.
  • 45a shows a device for separating solid layers 1 (cf., FIG. 46) from a donor substrate 2.
  • the device preferably has a holding device 14 for fixing the donor substrate 2.
  • a voltage generating layer 4 on the donor substrate 2 is a voltage generating layer 4, in particular consisting of a polymer material or having a polymer material, arranged.
  • the pressurizing device 8 may in this case, for example, an electrical or hydraulic or pneumatic or mechanical force generating device, in particular an actuator, for generating a force for pressing the pressurizing element 6 to the voltage generating layer 4 or be coupled.
  • the pressurization by means of the force generating device is adjustable.
  • a tempering device 26 is preferably carried out a thermal loading, in particular cooling, the voltage generating layer 4.
  • the thermal loading of the voltage generating layer 4 can be indirectly or exclusively indirectly, ie it can, for example, first the pressurizing element 6 are tempered, then the temperature generating layer 4 tempered. Furthermore, it is conceivable that temporally a direct and indirect temperature control of the voltage generating layer 4 takes place.
  • the tempering device 26 preferably provides a functional fluid 28, in particular nitrogen in preferably liquid or nebular form. Further, the pressurizing member 6 can be pressed against predetermined portions of the voltage generating layer 4, and at the same time, other predetermined portions of the same voltage generating layer 4 can be tempered by the tempering means 26. By the thermal application, the voltage generation layer 4 contracts, whereby mechanical stresses are generated in the donor substrate 2.
  • the pressurizing means 8 effects pressurization on portions of the voltage generating layer 4 or on the entire voltage generating layer 4 disposed between the pressurizing member 6 and the donor substrate 2 at the same time as voltage generation.
  • the pressurization device 8 thus counteracts force peaks which occur when the glass transition of the voltage generation layer 4 is reached. Furthermore, the pressure application device 8 preferably also reduces a deflection of the split-off portions of the solid body layer 1, whereby the wedge effect resulting from the crack propagation occurs at a significantly smaller angle, whereby the crack runs significantly more stable in the predefined release plane 12 (see FIG ,
  • the reference character D indicates the preferred pressure application direction.
  • FIG. 45b substantially corresponds to the illustration shown in FIG. 1a, wherein the donor substrate 2 has modifications 10 which were produced by means of laser beams.
  • the modifications 10 provide a detachment region 12 for guiding a tear for separating the solid state layer 1 from the donor substrate 2.
  • FIG. 46 shows that the pressurizing element 6 may have one or more passage members 18 and conduits 18 for guiding the functional fluid. Furthermore, this illustration shows a situation in which the pressurizing element 6 is used for limiting the deflection movement of the separated solid state portions.
  • the contact side 16 of the pressurization element 6 is preferably spaced apart at a distance AS from the exposed surface of the voltage generation layer 4 or with respect to the release plane 12.
  • the distance AS is preferably a fraction or smaller than a defined fraction of the shortest distance between the radial peripheral surface O and the axial center L.
  • a guide means 30 for specifying a direction of movement of the pressurizing device 8 in the event of a deflection may be provided in all embodiments described herein.
  • Fig. 47a shows schematically, several differently designed
  • Pressurizing elements 6a, 6b, 6c have different heights.
  • pressing 6a on the voltage generating layer 4 thus takes place a greater compression of the voltage generating layer 4 than when pressing 6c.
  • the area 6b is least or not pressed against the donor substrate 4 according to this embodiment.
  • 47b shows schematically that pressurization from the "thicker" side is possible, whereby the thin side is prevented from bending by a holding device 14 (eg vacuum holder, or else by holding tape ...) at least the plurality of separation steps occurring in dividing a donor substrate 2 into a plurality of wafers are closer to a processed layer than to a surface to which a pressurization element is brought into contact
  • the surface on which the pressurizing element is brought into contact delimits the donor substrate 2 in the donor substrate longitudinal direction, thereby ensuring that at least partially finished devices on the wafer are bent or bent only in a limited frame avoided that a surface treatment of the device side is necessary.
  • the bonding layer or the bonding interface 42 can be formed, for example, by an adhesive layer, in particular an adhesive tape, or by a phase change substance, in particular a fluid, in particular a liquid. If the bonding interface 42 is formed by a phase change substance, then the phase change substance preferably at freezing point has a freezing point of less than 20 ° C or less than 10 ° C or less than 5 ° C or 0 ° C or less than 0 ° C or less. 5 ° C or less than -20 ° C.
  • the phase change substance is preferably water, in particular demineralized water (deionized water).
  • the bonding substrate 44 and / or the processed surface 40 are preferably wetted or moistened with the phase change substance, the phase change substance being in a first state of aggregation. Subsequently, the processed surface 40 is applied or placed on the bonding substrate 44, in particular pressed. Furthermore, a temperature control of the phase change substance preferably takes place below the freezing point of the phase change substance, whereby the phase change substance is thereby converted from the first state of aggregation, in particular liquid, into a second state of aggregation, in particular solid. The cooling can be effected in this case by taking place for the temperature control of the recording layer cooling.
  • phase change substance is heated to a temperature below its freezing point before the temperature of the recording layer. This is advantageous because this bonding interface is reversible producible and can be canceled. Furthermore, no toxic substances are particularly preferably required in this case.
  • Fig. 48a shows an embodiment in which the pressurizing means 8 comprises a plurality of mutually movable pressurizing members 6a, 6b and 6c.
  • These pressurizing elements 6a, 6b, 6c can each be coupled via power transmission means 20, 22, 24 to one or more actuators for providing identical or different contact forces.
  • the individual pressurizing elements 6a, 6b, 6c can be deflected independently of one another, in particular if the force acting on the respective pressurizing element 6a, 6b, 6c exceeds a threshold force or minimum force defined for the respective pressurizing element 6a, 6b, 6c.
  • Fig. 48b shows an embodiment in which the pressurizing member 6b is moved further into the voltage generating layer 4 than the other pressurizing members 6a and 6c.
  • FIG. 48c shows purely by way of example that the pressurizing device 8 can have a round contact side 16.
  • the pressurizing elements 6a, 6b, 6c are designed accordingly.
  • the contact side 16 it is likewise possible in the context of the present invention for the contact side 16 to have a shape deviating from a round shape, in particular a shape having one or more straight edges, in particular a rectangular shape.
  • FIG. 49 shows a schematic cross-sectional view of a wafer 1000.
  • This wafer 1000 is preferably divisible into at least or exactly two or more than two solid-state disks.
  • the wafer 1000 can be referred to here as a thick wafer.
  • the wafer 1000 was preferably separated in a wafer process from a solid, in particular ingot or boule.
  • the division of the wafer 1000 preferably takes place in the context of a thinning treatment or in the context of a thinning step or several thinning steps.
  • the present process preferably comprises one or more of the following steps:
  • the modifications are preferably generated or effected by laser beams.
  • the edge processing and / or the modification generation preferably takes place before the application of a metal layer.
  • the edge processing releases a previously generated detachment region 1005 or reduces the distance of the detachment region from the outer circumferential surface of the solid-state disk or the solid-state layer or the wafer.
  • the separated solid-state disk or solid-state layer or the separated wafer preferably has a thickness which is less than the remaining thickness of the residual solid.
  • the thickness of the solid-state disk or of the solid-state layer or of the wafer is preferably not more than 99% or at most 95% or at most 90% or at most 85% or at most 80% or at most 75% or at most 65% or at most 55% of the thickness of the residual solids (1002 plus 1003).
  • the residual solid is preferably further used by one or more surface preparation processes, in particular grinding, edge process or removal of the edge, chemical mechanical polishing and / or renewed arrangement or production of electrical components on a treated surface.
  • the diameter of the separated solid-state disk 1001 and the diameter of the processed residual solid in particular after a production or arrangement of electrical components, identical or only marginally different, in particular less than 5% or less than 1% or less than 0.1% or less as 0.01% different.
  • the surface of the residual solid material which has been exposed by the separation is thus preferably treated in a manner that removes material, in particular surface-conditioning.
  • the portion 1002 is preferably separated off, in particular removed by grinding or polishing.
  • the second solid-state layer 1003 resulting from the material-removing processing then preferably further layers, in particular at least one or more metal layers, and / or arranged or generated or formed electrical components.
  • FIG 50 shows a schematic cross-sectional view of a wafer 1000.
  • This wafer 1000 is preferably divisible into at least or exactly two or more than two solid-state disks.
  • the wafer 1000 can be referred to here as a thick wafer.
  • the wafer 1000 was preferably separated in a wafer process from a solid, in particular ingot or boule. The division of the wafer 1000 preferably takes place in the context of a thinning treatment or in the context of a thinning step or several thinning steps.
  • the present process preferably comprises one or more of the following steps:
  • the modifications are preferably generated or effected by laser beams.
  • the edge processing and / or the modification generation preferably takes place before the application of a metal layer.
  • the edge processing preferably exposes a previously generated detachment region 1005 or reduces the distance of the detachment region from the surface of the solid-state disk or the solid-state layer or of the wafer.
  • the detachment area extends shell-shaped or cup-shaped or forms a 3D contour.
  • a second wafer or a second solid layer is divided out of an output wafer 1000, wherein the output wafer 1000 is thicker than the second solid layer or second solid layer 1009.
  • the direction of the crack during its propagation changes. It is possible in this case for the first solid-state layer 1001 to be separated off from the residual solids (1002 plus 1003).
  • an edge processing for exposing the modifications 1007 may then be provided.
  • the residual solids 1007 comprising the second solid state layer 1003 may first be divided out of the wafer 1007 or split out. Subsequently, the separation of the solid-state layer 1001 along the marked area 1007 or along any modifications 1007 that may have been generated is then preferably carried out Separation can thus be effected, for example, by means of splitting or by means of a cutting process, in particular sawing.
  • the residual solid 1007 is then preferably treated by means of one or more surface treatment steps, in particular to work out the second solid state layer 1003. For example, a first solid state layer (with a diameter of 150 mm) and a second solid state layer 1003 with a diameter of 100 mm can be produced in this way from a starting wafer with a diameter of 150 mm.
  • a first solid state layer (with a diameter of 200 mm) and a second solid state layer 1003 with a diameter of 150 mm can be produced from an output wafer with a diameter of 200 mm.
  • a first solid state layer (with a diameter of 300 mm) and a second solid state layer 1003 with a diameter of 200 mm can be produced from an output wafer with a diameter of 300 mm.
  • the edge processing shown in Figs. 49 and 50 may be e.g. be effected by means of a machining process or a corrosive process or a laser ablation process.
  • FIG. 51 a shows another example of the concept shown in FIG. 50.
  • the modification plane 1005 or the detachment region 1005 is preferably flat.
  • Reference numeral 1004 preferably represents trenching or trenching. be effected by means of a machining process or a corrosive process or a laser ablation process.
  • a region 1007 and / or modifications 1007 analogous to the embodiment of FIG. 50 may be provided.
  • one or more layers, in particular made of metal or metal, and / or electrical components can be arranged or produced on a surface of the first solid-state layer 1001 and / or on a surface of the second solid-state layer 1003.
  • FIG. 51 b shows an example according to which two further wafers 1000 b, 1000 c are divided out of the wafer 1000 a.
  • the solid state layer 1001 is then preferably separated from the wafer 1000a, and the solid state layer 1003 is then preferably separated from the wafer 1000b.
  • the wafer 1000c may also be used for further separation. If a further wafer (not shown) is separated out of the wafer 1000c, then the solid state layer 1010 can be separated off. Alternatively, however, it is also conceivable that the wafer 1000c is used for the production of electrical components.
  • the electrical components are preferably produced or arranged on the wafer or the respective solid state layer.
  • 51 c shows a plan view of a thick wafer 1000.
  • This thick wafer 1000 is used to produce at least a first solid-state layer 1001 and a second solid-state layer 1003.
  • the thick wafer 1000 preferably has a circumferential recess 1004, in particular a trench.
  • the thick wafer 1000 preferably has a first Fiat 101 1 and / or a second Fiat 1012.
  • 51 d shows a schematic sectional illustration of the wafer 1000 shown in FIG. 51 c. According to this illustration, it can be seen that the depression 1004 has a specific or defined shape.
  • CDx means the critical expansion in the x-direction, in particular in the width direction.
  • CDy means the critical expansion in the y-direction, especially in the depth direction.
  • the modifications produced by means of laser beams can preferably also take place after the generation of one or more layers and / or one or more structures, if the condition Min (CDx, CDy) ⁇ 100 ⁇ m per layer and / or structure is maintained.
  • the present invention provides a possibility that by means of laser beams inside the solid state modifications can be made at a time when one or more layers and / or one or more structures have already been formed on the surface of the solid state layer. In this case, the direction of irradiation of the laser beams travels over the surface of the solid-state layer into the solid body on which the layer or layers or the structure or structures are arranged or generated.
  • Fig. 53 shows two examples of the generation of the modifications in the solid 1 in the form of curved linear shapes, in particular, curved lines or odd lines or curved lines.
  • the solid and an optical element of the laser are preferably moved relative to one another according to the transport paths 1014.
  • the laser beams can thus be introduced into the solid along the path portions 1014 which cover the solid.
  • linear shapes can be generated, the shape of which preferably corresponds in sections to the sectional shape of the path 1014.
  • the modifications are therefore preferably generated according to this embodiment by means of a non-linear writing method.
  • the shape of the path 1014 or of the writing profile can preferably represent a spiral or be spiral-shaped or represent a shape or shapes derived from circular movements.
  • the write history or the path is chosen with such a shape that, for example, results in a parabolic zig-zag.
  • This solution causes predominantly or always a continuous relative movement takes place at the same time in the X and Y direction or a continuous departure of a curved path takes place.
  • no scheduling step or index step or offset step is effected.
  • no relative movement takes place in a second direction perpendicular to the first direction.
  • the donor substrate (or the solid) preferably has crystal lattice planes which are inclined with respect to a flat main surface.
  • the main surface of the donor substrate is preferably limited in the longitudinal direction of the donor sub-start on the one hand, wherein a Kritallgitterebenennormale tends towards a main surface normal in a first direction.
  • the donor substrate preferably consists of SiC or preferably has SiC.
  • FIG. 54a shows an example according to which the optical properties are locally different due to a Einstrahlhindernisses and therefore the distance of the focal point of the laser radiation to the surface over which the laser radiation penetrates into the solid, changed or locally changed or changed directly in dependence , This can lead to the modifications not being generated in one plane, or not lying on a desired plane or not describing a desired contour or shape.
  • the output can reduce or increase the reworking effort.
  • the Einstrahlhindernisse can eg implant areas and / or electrical components and / or components of electrical components and / or the solid edge or wafer edge and / or one or more EPI layer / s, structuring (eg etching trenches) and / or other regular changes through the chip design.
  • Implant regions 1541 preferably represent regions with higher doping with foreign atoms, eg, phosphorus, boron, etc. These foreign atoms change the optical properties-for example, can cause greater absorption, which in turn can prevent crack formation in the material.
  • the reference numeral 1544 indicates a crack propagation and the reference numeral 1545 designates a crack propagation 1545 stopped or deflected in the region of the irradiation obstacle.
  • a step of detecting and / or analyzing Einstrahlhindernissen be provided, wherein preferably an energy adjustment in dependence on the detected Einstrahlhindernis or the Einstrahlhindernissen takes place.
  • This solution is based on the realization that any laterally inhomogeneous change in the optical properties influences the energy threshold. The better these changes can be detected and corrected, the more homogeneous the laser plane or modification plane or release plane or the separation region can be generated.
  • reference numeral 1543 designates a laser plane modification without depth correction
  • numeral 1542 denotes a laser plane modification depth correction
  • FIG. 55 shows a more detailed illustration of the relationship described with reference to FIGS. 54a and 54b.
  • the energy adjustment takes place according to this example due to multiple or alternating Einstrahlhindernisse.
  • the illustrated Einstrahlhindernisse that change the beam path 5501 of the laser beam 5504 after the objective 5503 in the solid state 1, 1000 or the composite structure, hereby among other things, e.g. an EPI layer 5502, an implant region 5505, a dicing street 5506, metal structures 5507, etched trenches 5508, regions with high doping concentrations 5509, and a chip 5510.
  • FIG. 56 shows a further illustration to illustrate the relationships already described with regard to FIGS. 54 and 55.
  • State X represents a reference state.
  • the laser energy settings and the depth settings are intended for a defined material.
  • state A due to an EPI layer and an implant area in the light path, adjustments of the laser energy settings and the depth adjustments are required. This can be caused for example by a higher absorption and / or by a shifted optical constant n.
  • state B there is an implant region, an EPI layer and metal structures in the light path, causing very large absorptions. Furthermore, there is also a higher doped zone in the light path, which, for example, a greater absorption and a small offset of the optical constant n is effected. This requires adjustments to the laser energy settings and the depth settings.
  • the formation of the laser modification is thus achieved by exceeding a laser energy threshold, from which a phase transformation occurs. If the energy in the laser pulse is now increased, the threshold along the beam direction is exceeded earlier when focusing, which leads to an earlier occurrence of the phase transformation or material modification by the laser or the laser radiation, regardless of the actual geometric focus position. This means that with continuous processing with a laser pulse energy above the threshold, the position of the laser modification plane in the material moves closer to the material surface and is accordingly higher than defined via the optical focus.
  • FIG. 57 a shows an incident light cone 5700, by means of which a focus 5700 is produced in the solid body 1, 1000. Shown here is a focus image of a lens irradiated by a laser with gaussian beam profile.
  • Fig. 57b schematically illustrates a focus image 5702 of a lens irradiated by a non-gaussian beam profile laser, e.g. after the beam has been changed by an SLM.
  • a spatial light modulator is a spatial modulator for light and thus a device through which a spatial modulation can be imposed.
  • the Z-dimension of the focal point is significantly reduced or reduced.
  • Figure 57c schematically illustrates a focus image 5703 of an objective irradiated by a non-gaussian beam profile laser, e.g. after the beam has been changed by a diffractive optical element (DOE).
  • the beam is preferably split to form a plurality of focuses by the DOE.
  • a DOE is preferably used to change the diffraction of a laser beam to the spatial image of the focal point.
  • Diffractive optical elements act by diffraction on laser radiation.
  • structures are used which are on the size scale of the laser wavelength.
  • an element is calculated, which can then be produced in larger numbers.
  • the spatial distribution of the light in the laser beam profile is changed, either directly after the element or at the focal point after a focusing element.
  • a beam may be split into a plurality of beams such that a Gaussian beam intensity profile, which normally occurs, is converted to another form, or that the intensity distribution of the laser radiation in the focus changes in a manner not achievable by conventional lenses, e.g. by deliberately introducing or suppressing secondary maxima required for the desired laser interaction.
  • a Spatial Light Modulator is a device for imparting spatial modulation to light.
  • an SLM modulates the intensity of a light beam, but it is also possible to simultaneously modulate the phase or phase and intensity.
  • This spatial modulation is done in the DOE by the structures in the element, in the SLM, however, by the individual pixels on the SLM. Especially after picture or
  • the number of beams or the laser beam profile used in a laser processing device can be switched dynamically. Also, a dynamic adjustment in the process is possible, for example, after feedback of a simultaneous monitoring of the process progress.
  • the method proposed here comprises the step of changing a beam characteristic of the laser beams prior to penetration into the solid, the beam characteristic being the focus of the intensity distribution, wherein the change or adaptation of the beam characteristic of at least or exactly one spatial light modulator and / or at least or exactly one DOE is effected, wherein the spatial light modulator and / or the DOE is arranged in the beam path of the laser radiation between the solid body and the radiation source.
  • DOEs and Spatial Light modulators refer to the following document: Flexible beam shaping system for the next generation of process development in laser micromachining, LANE 2016, 9th International Conference on Photonic Technologies LANE 2016, Tobias Klerks, Stephan Eifel ,
  • Non-gaussian beam profiles that deviate from the usual Gaussian shape are referred to as non-gaussian beam profiles and can be used to achieve a different machining result.
  • a line focus conceivable that has a significantly different dimension in a dimension perpendicular to the beam propagation direction than in a second dimension. This allows sweeping wider areas of the workpiece with the laser beam in the processing step.
  • a top-hat profile that has a constant intensity in the center of the beam, which offers the advantage that there are no regions of different intensity in the focus mode or at least only areas of equal intensity above the laser processing threshold. This can be used, for example, to minimize the grinding losses after separation.
  • Fig. 58 shows a so-called frontside process.
  • the laser beams are introduced via a surface of the solid in the solid, which is closer to the Ablöseebene or modification plane to be generated as a solid body at an opposite end limiting further surface.
  • This frontside process is advantageous because the laser depth (preferably ⁇ 100 ⁇ " ⁇ ) compared to a backside process (eg> 250 ⁇ or up to 400 ⁇ or more) (see Fig. 59) is significantly lower .
  • a backside process eg> 250 ⁇ or up to 400 ⁇ or more
  • the rear side of the solid body does not need to be additionally processed to ensure better laser beam quality at the laser level or on the release plane or in the area of the release plane.
  • the frontside process thus generates the modifications in the solid state before the production of a metallic contact layer.
  • the modification generation may be after polishing (5801) and / or before creating an EPI layer (5802) or after creating an EPI layer (5802) and / or before creating an implant region (5803) in FIG Solid state or after the creation of an implant area (5803) and / or before the production or placement of a first metal layer (5804).
  • a first metal layer 5804
  • the properties of the first metal layer (5804) in particular the size (see embodiments of FIG. 52) and / or the composition, after the production or the arrangement of the first metal layer
  • Fig. 59 shows a so-called backside process.
  • the laser beams are introduced into the solid body via a surface of the solid, which is further spaced from a release plane or modification plane to be generated than a surface or main surface bounding the solid at an opposite end.
  • This backside process is advantageous since no or only slight adjustments of the chip design on the front side during the arrangement or production of components, in particular electrical components, in particular consisting of metal or consisting of metal, are required.
  • the production of the modifications in the solid state before the production of a metallic contact layer thus takes place during the backside process.
  • the modification generation may be after polishing (5901) and / or before generating an EPI layer (5902) or after creating an EPI layer (5902) and / or before creating an implant region (5903) in FIG Solid state or after the creation of an implant area (5903) and / or before the generation or arrangement of a first metal layer (5904).
  • the first metal layer in particular the size (see embodiments of FIG. 52) and / or the composition, after the production or the arrangement of the first metal layer
  • the modifications may be generated in succession in at least one row or row or line, wherein the modifications 9 produced in a row or row or line are preferably generated at a distance X and height H, so as to propagate between two successive modifications Crack, in particular in the direction of crystal lattice propagating crack, whose crack propagation direction is aligned at an angle W opposite the Ablöseebene connecting the two modifications together.
  • the angle W is in this case preferably between 2 ° and 6 °, in particular at 4 °.
  • the crack propagates from a region below the center of a first modification toward a region above the center of a second modification.
  • the essential context here is that the size of the modification can or must be changed depending on the distance of the modifications and the angle W.
  • the laser process is also advantageous to form the polarization of the laser radiation used specifically.
  • the laser can be circularly polarized, for example by using a lambda / 4 plate for a linearly polarized laser source.
  • an initial charge carrier density in the material is first generated by multiphoton absorption.
  • the probability of occurrence of multiphoton absorption in the material is dependent on the position of the crystal axes relative to the direction of the electric field of the laser radiation, in particular for crystals. This angular dependence of the multiphoton absorption can be used to guide the laser process inside the material particularly efficiently and to make it as uniform as possible.
  • this method may also comprise the step of producing a composite structure by arranging or producing layers and / or components 150 at or above an initially exposed surface of the solid 1, wherein the exposed surface is preferably part of the solid layer to be separated. Most preferably, the modifications to form the release plane are created prior to the formation of the composite structure.
  • a receiving layer 140 can be arranged on an exposed surface of the composite structure or of the solid body analogously to the methods described above.
  • the present invention preferably relates to a method for separating at least one solid state layer 2 from a donor substrate 1.
  • the method preferably comprises at least the steps of providing the donor substrate 1, wherein the donor substrate 1 has crystal lattice planes 6 facing a flat main surface 8 wherein the main surface 8 delimits the donor substrate 1 in the longitudinal direction of the donor sub-start 1 on the one hand, with a screen grid normal to a main surface normal in a first direction, providing at least one laser 29, introducing laser radiation 14 of the laser 29 into the interior of the solid 1 over the main surface (8) for altering the material properties of the solid 1 in the range of at least one laser focus, the laser focus being formed by laser beams of the laser emitted by the laser, wherein the change in material is Property by changing the penetration of the laser radiation into the donor substrate 1 forms a linear shape 103, wherein the changes of the material property are generated on at least one generating plane 4, wherein the crystal lattice planes 6 of the donor substrate 1 are inclined relative to the generating plane 4, wherein
  • each method described herein may additionally or alternatively comprise the step of introducing an external force into the solid 1 for generating stresses in the solid 1, the external force being so strong that the stresses cause crack propagation along the release plane 8.
  • each method described here may additionally or alternatively comprise the step of generating a second group of modifications by means of laser beams for specifying at least one, in particular a plurality of second, detachment plane (s).
  • the first release plane and the second release plane are preferably oriented orthogonal to one another.
  • each method described herein may additionally or alternatively comprise the step of pressing at least one pressurizing element of a pressurizing device against at least a predetermined portion of the voltage generating layer for pressing the voltage generating layer to the surface.
  • the pressurizing element is pressed against the voltage generating layer at least during the thermal loading of the voltage generating layer and / or during the crack propagation.
  • At least one separated portion of the solid state layer or solid state layer is deflected in the direction of the pressurizing element due to the voltage generation layer or due to the polymer layer and pressed against the pressurizing element.
  • the pressurizing element preferably limits the maximum deflection of the solid state layer or the solid state layer.
  • the present invention relates to a method for separating at least one solid state layer 4 from at least one solid 1.
  • the process according to the invention comprises the steps of:
EP18701002.0A 2017-04-20 2018-01-15 Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten Pending EP3612343A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017003830.9A DE102017003830A1 (de) 2017-04-20 2017-04-20 Verfahren zur Waferherstellung mit definiert ausgerichteten Modifikationslinien
DE102017007585.9A DE102017007585A1 (de) 2017-08-11 2017-08-11 Vorrichtung und Verfahren zum Beaufschlagen von Spannungserzeugungsschichten mit Druck zum verbesserten Führen eines Abtrennrisses
PCT/EP2018/050902 WO2018192691A1 (de) 2017-04-20 2018-01-15 Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten

Publications (1)

Publication Number Publication Date
EP3612343A1 true EP3612343A1 (de) 2020-02-26

Family

ID=60997491

Family Applications (2)

Application Number Title Priority Date Filing Date
EP18701002.0A Pending EP3612343A1 (de) 2017-04-20 2018-01-15 Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten
EP18700578.0A Active EP3612342B1 (de) 2017-04-20 2018-01-15 Verfahren zur waferherstellung mit definiert ausgerichteten modifikationslinien

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP18700578.0A Active EP3612342B1 (de) 2017-04-20 2018-01-15 Verfahren zur waferherstellung mit definiert ausgerichteten modifikationslinien

Country Status (7)

Country Link
US (2) US11869810B2 (ja)
EP (2) EP3612343A1 (ja)
JP (2) JP7250695B2 (ja)
KR (3) KR20200008566A (ja)
CN (2) CN110691671B (ja)
TW (1) TWI706453B (ja)
WO (2) WO2018192689A1 (ja)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020090894A1 (ja) 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
DE112019005413T5 (de) 2018-10-30 2021-07-22 Hamamatsu Photonics K.K. Laserbearbeitungsvorrichtung und Laserbearbeitungsverfahren
JP2020102536A (ja) * 2018-12-21 2020-07-02 国立大学法人東海国立大学機構 レーザ加工方法、半導体部材製造方法、及び半導体対象物
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) * 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
DE102019201438B4 (de) * 2019-02-05 2024-05-02 Disco Corporation Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats
US11344972B2 (en) * 2019-02-11 2022-05-31 Corning Incorporated Laser processing of workpieces
JP7148437B2 (ja) * 2019-03-01 2022-10-05 信越半導体株式会社 ワークの切断加工方法及びワークの切断加工装置
DE102019107238A1 (de) * 2019-03-21 2020-09-24 Relyon Plasma Gmbh Vorrichtung und Bauelement zur Erzeugung einer hohen Spannung oder hohen Feldstärke
WO2020213478A1 (ja) * 2019-04-19 2020-10-22 東京エレクトロン株式会社 処理装置及び処理方法
US10611052B1 (en) * 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7330771B2 (ja) * 2019-06-14 2023-08-22 株式会社ディスコ ウエーハの生成方法およびウエーハの生成装置
DE102019122614A1 (de) 2019-08-22 2021-02-25 Infineon Technologies Ag Ausgangssubstrat, wafer-verbund und verfahren zum herstellen von kristallinen substraten und halbleitervorrichtungen
DE102019216267A1 (de) * 2019-10-23 2021-04-29 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben
IT202000000787A1 (it) * 2020-01-17 2021-07-17 Sacmi Imola Sc Procedimento per la produzione e il riempimento di contenitori destinati a contenere alimenti.
JP7370879B2 (ja) 2020-01-22 2023-10-30 株式会社ディスコ ウエーハ生成方法、及びウエーハ生成装置
JP7405365B2 (ja) * 2020-01-31 2023-12-26 国立大学法人東海国立大学機構 レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置
JP7427189B2 (ja) * 2020-01-31 2024-02-05 国立大学法人東海国立大学機構 レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置
LT3875436T (lt) * 2020-03-06 2024-04-10 Schott Ag Substrato elementas ir substrato elemento gavimo ir (arba) atskyrimo atlikimo būdas
JP2021168347A (ja) * 2020-04-10 2021-10-21 株式会社ディスコ ウエーハの生成方法
CN113594014B (zh) * 2020-04-30 2024-04-12 中微半导体设备(上海)股份有限公司 零部件、等离子体反应装置及零部件加工方法
TWI717302B (zh) * 2020-07-30 2021-01-21 頂極科技股份有限公司 半導體製程零配件的質變檢測系統及方法
CN111992543B (zh) * 2020-08-21 2021-10-22 厦门理工学院 一种激光等离子体光丝清洗法
TR202019031A2 (tr) * 2020-11-25 2021-02-22 Univ Yildiz Teknik Yüksek kalitede hetero epitaksiyel monoklinik galyum oksit kristali büyütme metodu
CN113001038B (zh) * 2021-03-05 2022-11-25 赣州市恒邦金属制品有限公司 一种具有废屑收集功能的激光切割装置
CN115121551B (zh) * 2021-03-29 2024-02-23 芝浦机械电子装置株式会社 基板处理装置
CN113414542B (zh) * 2021-06-10 2022-07-08 常州信息职业技术学院 一种延长零件摩擦副表面使用寿命的方法和装置
CN113427650B (zh) * 2021-06-17 2023-03-14 西北工业大学 一种定向凝固合金单晶取向测定及籽晶切割的方法
CN115647578A (zh) * 2022-12-28 2023-01-31 歌尔股份有限公司 激光加工方法
CN117059528B (zh) * 2023-10-10 2023-12-19 广州市艾佛光通科技有限公司 一种晶片剥离装置

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938416B2 (ja) * 1982-05-07 1984-09-17 マツダ株式会社 エンジンの吸気装置
JPS62206815A (ja) * 1986-03-07 1987-09-11 Agency Of Ind Science & Technol 半導体ウエハ
JPS6433924A (en) * 1987-07-29 1989-02-03 Sony Corp Semiconductor wafer
JP3145851B2 (ja) 1993-12-20 2001-03-12 日本電気株式会社 半導体基板及び半導体装置
JP2005028423A (ja) 2003-07-09 2005-02-03 Disco Abrasive Syst Ltd レーザー加工方法およびレーザー加工装置
JP2005086175A (ja) 2003-09-11 2005-03-31 Hamamatsu Photonics Kk 半導体薄膜の製造方法、半導体薄膜、半導体薄膜チップ、電子管、及び光検出素子
WO2006010289A2 (de) 2004-07-30 2006-02-02 Synova S.A. Verfahren zur vereinzelung von auf einem halbleiterwafer angeordneten elektronischen schaltkreiseinheiten (chips)
KR101109860B1 (ko) * 2004-08-06 2012-02-21 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법, 가공 대상물 절단 방법 및 반도체 장치
JP2006245498A (ja) 2005-03-07 2006-09-14 Sharp Corp 基板の製造方法およびその装置
JP2007275920A (ja) 2006-04-05 2007-10-25 Seiko Epson Corp 基体の製造方法、表示装置、電気光学装置、電子機器
JP5232375B2 (ja) 2006-10-13 2013-07-10 アイシン精機株式会社 半導体発光素子の分離方法
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
JP2008290090A (ja) 2007-05-23 2008-12-04 Pulstec Industrial Co Ltd レーザ微細加工装置及びレーザ微細加工装置のフォーカスサーボ方法
RU2472247C2 (ru) * 2007-11-02 2013-01-10 Президент Энд Феллоуз Оф Гарвард Колледж Изготовление самостоятельных твердотельных слоев термической обработкой подложек с полимером
JP2009140959A (ja) 2007-12-03 2009-06-25 Tokyo Seimitsu Co Ltd レーザーダイシング装置及びダイシング方法
JP5454080B2 (ja) 2008-10-23 2014-03-26 住友電気工業株式会社 レーザ加工方法およびレーザ加工装置
US8354611B2 (en) 2008-10-29 2013-01-15 Coherent, Inc. Laser engraving apparatus
CA2747840A1 (en) 2008-12-23 2010-07-01 Siltectra Gmbh Method for producing thin, free-standing layers of solid state materials with structured surfaces
US20100243617A1 (en) * 2009-03-26 2010-09-30 Electro Scientific Industries, Inc. Printed circuit board via drilling stage assembly
JP5367450B2 (ja) 2009-05-12 2013-12-11 株式会社ディスコ 半導体ウエーハの加工方法
US9701581B2 (en) * 2009-06-04 2017-07-11 Corelase Oy Method and apparatus for processing substrates using a laser
JP5775265B2 (ja) 2009-08-03 2015-09-09 浜松ホトニクス株式会社 レーザ加工方法及び半導体装置の製造方法
JP5509448B2 (ja) 2009-09-07 2014-06-04 国立大学法人埼玉大学 基板スライス方法
JP5789929B2 (ja) 2010-08-03 2015-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
JP2012094698A (ja) 2010-10-27 2012-05-17 Renesas Electronics Corp 半導体装置の製造方法
JP5917862B2 (ja) 2011-08-30 2016-05-18 浜松ホトニクス株式会社 加工対象物切断方法
JP5999687B2 (ja) 2011-08-31 2016-09-28 ローム株式会社 ＳｉＣエピタキシャルウエハおよびそれを用いたＳｉＣ半導体素子
FR2980279B1 (fr) 2011-09-20 2013-10-11 Soitec Silicon On Insulator Procede de fabrication d'une structure composite a separer par exfoliation
EP2762264A4 (en) 2011-11-04 2015-12-16 Fujikura Ltd METHOD FOR PRODUCING A SUBSTRATE WITH MICROPORES
DE102012001620A1 (de) 2012-01-30 2013-08-01 Siltectra Gmbh Verfahren zur Herstellung von dünnen Platten aus Werkstoffen geringer Duktilität mittels temperaturinduzierter mechanischer Spannung unter Verwendung von vorgefertigten Polymer-Folien
JP5905274B2 (ja) * 2012-01-30 2016-04-20 浜松ホトニクス株式会社 半導体デバイスの製造方法
WO2013126927A2 (en) * 2012-02-26 2013-08-29 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP6167358B2 (ja) 2012-03-30 2017-07-26 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法
JP5596750B2 (ja) 2012-07-06 2014-09-24 東芝機械株式会社 レーザダイシング方法
DE102013007672A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle
DE112014003144T5 (de) 2013-07-02 2016-03-31 Ultratech, Inc. Ausbildung von Heteroepitaxieschichten mit schneller thermischer Bearbeitung, um Gitterversetzungen zu entfernen
JP2015074002A (ja) 2013-10-07 2015-04-20 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
DE102013016682A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Erzeugung einer Rissauslösestelle oder einer Rissführung zum verbesserten Abspalten einer Festkörperschicht von einem Festkörper
DE102014013107A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Neuartiges Waferherstellungsverfahren
DE102014002600A1 (de) 2014-02-24 2015-08-27 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen
JP6349175B2 (ja) 2014-07-14 2018-06-27 株式会社ディスコ リフトオフ方法及び超音波ホーン
US10930560B2 (en) 2014-11-27 2021-02-23 Siltectra Gmbh Laser-based separation method
KR20180059569A (ko) 2014-11-27 2018-06-04 실텍트라 게엠베하 재료의 전환을 이용한 고체의 분할
KR101972466B1 (ko) * 2015-01-13 2019-04-25 로핀-시나르 테크놀로지스 엘엘씨 취성 재료를 묘각하고 화학 식각하는 방법 및 시스템
US20170362697A1 (en) * 2015-01-28 2017-12-21 Siltectra Gmbh Transparent and highly stable screen protector
JP6395633B2 (ja) * 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
DE102015004603A1 (de) * 2015-04-09 2016-10-13 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen
DE102015006971A1 (de) 2015-04-09 2016-10-13 Siltectra Gmbh Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern
JP6516184B2 (ja) 2015-05-19 2019-05-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
JP6482389B2 (ja) 2015-06-02 2019-03-13 株式会社ディスコ ウエーハの生成方法
JP6478821B2 (ja) 2015-06-05 2019-03-06 株式会社ディスコ ウエーハの生成方法
JP6486240B2 (ja) 2015-08-18 2019-03-20 株式会社ディスコ ウエーハの加工方法
US10858495B2 (en) 2016-03-24 2020-12-08 Siltectra Gmbh Polymer hybrid material for use in a splitting method
JP6604891B2 (ja) * 2016-04-06 2019-11-13 株式会社ディスコ ウエーハの生成方法

Also Published As

Publication number Publication date
TW201933453A (zh) 2019-08-16
JP2020518130A (ja) 2020-06-18
EP3612342B1 (de) 2024-02-28
US20210197314A1 (en) 2021-07-01
CN110691671B (zh) 2023-10-10
WO2018192691A1 (de) 2018-10-25
CN110769967A (zh) 2020-02-07
KR20200008566A (ko) 2020-01-28
JP7130667B2 (ja) 2022-09-05
KR20200010256A (ko) 2020-01-30
KR102551442B1 (ko) 2023-07-06
KR20220153127A (ko) 2022-11-17
EP3612342A1 (de) 2020-02-26
WO2018192689A1 (de) 2018-10-25
JP2020520087A (ja) 2020-07-02
CN110691671A (zh) 2020-01-14
US20200388538A1 (en) 2020-12-10
US11869810B2 (en) 2024-01-09
JP7250695B2 (ja) 2023-04-03
TWI706453B (zh) 2020-10-01

Similar Documents

Publication Publication Date Title
EP3612342B1 (de) Verfahren zur waferherstellung mit definiert ausgerichteten modifikationslinien
WO2017167614A9 (de) Kombinierte laserbehandlung eines zu splittenden festkörpers
EP3400110B1 (de) Verfahren und vorrichtung zum planaren erzeugen von modifikationen in festkörpern
DE102017003830A1 (de) Verfahren zur Waferherstellung mit definiert ausgerichteten Modifikationslinien
WO2018108938A1 (de) Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten
EP3137657B1 (de) Kombiniertes festkörperherstellungsverfahren mit laserbehandlung und temperaturinduzierten spannungen zur erzeugung dreidimensionaler festkörper
EP3186824B1 (de) Splitting-verfahren und verwendung eines materials in einem splitting-verfahren
DE102017010284A1 (de) Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten
DE102016014821A1 (de) Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten
DE102018001605A1 (de) Verfahren zum Kompensieren von Verformungen eines mittels Laserstrahl behandelten und/oder beschichteten Festkörpers
DE102016014796A1 (de) Verfahren zur Verbesserung der Oberflächengüte einer sich infolge einer Rissausbreitung ergebenden Oberfläche

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: UNKNOWN

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20191018

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20230116