EP2477754B1 - Procédé et dispositif de dépôt chimique en phase gazeuse d'un film polymère sur un substrat - Google Patents

Procédé et dispositif de dépôt chimique en phase gazeuse d'un film polymère sur un substrat Download PDF

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Publication number
EP2477754B1
EP2477754B1 EP10763819.9A EP10763819A EP2477754B1 EP 2477754 B1 EP2477754 B1 EP 2477754B1 EP 10763819 A EP10763819 A EP 10763819A EP 2477754 B1 EP2477754 B1 EP 2477754B1
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Prior art keywords
substrate
chamber
polymer precursor
liquid
gaseous
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German (de)
English (en)
French (fr)
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EP2477754A1 (fr
Inventor
Claudine Biver
Francis Maury
Virginie Santucci
François SENOCQ
Sylvie Vinsonneau
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Centre National de la Recherche Scientifique CNRS
EssilorLuxottica SA
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Centre National de la Recherche Scientifique CNRS
Essilor International Compagnie Generale dOptique SA
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/002—Pretreatement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/062—Pretreatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B05D2203/35—Glass

Definitions

  • the invention relates to a method of chemical vapor deposition , also called chemical vapor deposition (CVD), by which the deposition of a polymer film (or polymer film) is effected by activation photonics of a reactive gas phase.
  • CVD chemical vapor deposition
  • the CVD deposition of polymer films is of particular interest to the electronic, medical, defense, watchmaking, pharmaceutical, and nanotechnologies.
  • the coating of parylene®, or poly-p-xylylene, deposited by CVD has many characteristics very interesting for these industries.
  • the deposition is carried out under vacuum evaporation at room temperature, in the absence of a solvent, and gives rise to the production of a semi-crystalline transparent film.
  • the deposition process is known as the Gorham process ( Gorham WF, "A new general synthetic method for the preparation of linear poly-p-xylylenes", J. Polym. Sci. A-1, 4 (1996) 3027 ) and is generally implemented by COMELEC, according to the teaching of the patent EP 1 672 394 B1 of which she is co-holder.
  • an exemplary embodiment describes a CVD process operated in the presence of a gaseous monomer, glycidyl methacrylate (GMA), and a gaseous photoinitiator, 2,2'-azobis (2-methylpropane) ( ABMP).
  • GMA gaseous monomer
  • ABMP gaseous photoinitiator
  • a poly (glycidyl methacrylate) film (PGMA) is thus deposited on a silica substrate.
  • Photo-initiation is performed in a vacuum chamber that contains the substrate, equipped with an external source of UV light, at an intensity of 350 to 400 nanometers.
  • the present patent application aims to remedy the disadvantages of the prior art.
  • the photon activation according to the invention is not carried out in the vicinity of the substrate.
  • the substrate and the film growing on the substrate are advantageously protected from possible degradation by photon activation.
  • the photonic activation makes it possible to selectively supply energy so as to decompose the polymer precursors, without disturbing the substrate and the gas phase in the vicinity of the substrate.
  • Another advantage of the invention is that the process is particularly reliable and industrializable.
  • Photon activation radiation is generally UV (or Ultra Violet) radiation, most often at a wavelength of 200 to 400 nm.
  • the substrate is generally solid and silica, glass, quartz, polymer, or metal.
  • the substrate can even be photosensitive since, in the method of the invention, the substrate is not irradiated by photon activation radiation.
  • the substrate may also comprise at least one cavity in which the liquid is deposited, which is generally a microcuvette.
  • a microcuvette comprises at least one wall most often made of polymer (organic, inorganic or hybrid, ie inorganic-organic mixture), silica, glass or quartz, preferably of polymer. This polymer is also called resin.
  • the polymer film is deposited on a substrate comprising at least one microcuvette in which at least one liquid is deposited.
  • the method according to the invention makes it possible to encapsulate a liquid that is initially present on the substrate, that is to say to completely wrap said liquid with a polymer film and a portion of the substrate. Most often, the liquid is enclosed in an envelope consisting of a portion of the polymer film and a portion of the substrate.
  • This envelope can be waterproof or not.
  • the substrate may be formed of a plurality of microcups, each microcuvette having at least one common wall with another microcuvette, and the deposited film according to the invention may be sealed and seal all the microcuvettes in which rests at least one liquid, or only at least two microcuvettes. It is also possible that the film deposited according to the invention is not waterproof, the liquids of the different microcuvettes can be mixed together.
  • the process according to the invention in which a photon activation is not carried out in the vicinity of the substrate, makes it possible to deposit a polymer film on a liquid having a low saturation vapor pressure of liquid at the deposition temperature. .
  • said liquid has a saturation vapor pressure of less than 100 Pa, preferably less than 10 Pa, at the deposition temperature.
  • this saturation vapor pressure is generally lower than the total pressure of the gaseous phase of a certain ratio, for example from 10 to 100.
  • the patent EP 1 672 394 B1 mentions a total pressure in the deposition chamber of 7 Pa at the deposition temperature, and indicates that the saturated vapor pressure of the liquid to be encapsulated must be lower than this pressure, and ideally less than 0.7 Pa at the deposition temperature . According to the invention, the working pressure can therefore be significantly and advantageously greater than the working pressure of the parylene deposition process according to the prior art.
  • the process according to the invention can advantageously be carried out at a deposition pressure close to atmospheric pressure and / or at a temperature close to ambient temperature (approximately 20 ° C.).
  • the process according to the invention is such that the temperature of the gas phase is in a range of 20 to 100 ° C, preferably 50 to 70 ° C, in the photonic activation step.
  • the process according to the invention is such that, in the gas phase deposition step, the total pressure of the gaseous phase is preferably in a range of 10 2 to 4.10 3 Pa, and the temperature of the substrate is in a range of -10 to 50 ° C, preferably 20 to 30 ° C.
  • the polymer precursor is generally a photopolymerizable monomer at the wavelength of UV activation, and can generally be used with or without a polymerization photoinitiator.
  • the precursor is preferably chosen from the group formed by the monomers: acrylic derivatives (such as epoxy acrylates, acrylate urethanes, acrylate polyesters), methacrylic derivatives, parylene derivatives, styrene derivatives, itaconic derivatives, fumaric derivatives, vinyl halides, vinyl esters, vinyl ethers, and heteroaromatic vinyls; and still more preferably selected from the group consisting of poly (ethylene glycol) diacrylate (PEGDA), poly (ethylene glycol) methacrylate (PEGMA), 2-hydroxyethyl methacrylate (HEMA), acrylic acid (AA ), ethyl acrylate (EA), methyl methacrylate (MMA) and di-chloro-di-p-xylylene (dichloro [2,2] paracycl
  • a multifunctional monomer such as a di or tri acrylate such as 1,6 hexanediol diacrylalate (HDDA) or pentaerythritol triacrylate (PETA), or diene as the divinyl benzene or butadiene or isoprene.
  • HDDA 1,6 hexanediol diacrylalate
  • PETA pentaerythritol triacrylate
  • diene diene as the divinyl benzene or butadiene or isoprene.
  • the polymer precursor may be in gaseous form, in which case it feeds directly, alone or as a gas mixture, the photonic activation step.
  • said polymer precursor can also be in liquid or solid form, in which case the process of the invention comprises at least one additional step, intended to provide the polymer precursor, alone or as a mixture, in gaseous form for step d photonic activation.
  • the method according to the invention may further comprise at least one vaporization step, bubbling or sublimation, which allows the supply of gaseous polymer precursor.
  • the polymer precursor may be in liquid form when it is either in liquid form or solubilized in a solvent itself liquid.
  • the method when the polymer precursor is in liquid form, the method preferably further comprises at least one vaporization step, said vaporization step being carried out prior to the photonic activation step, and allowing the supply of gaseous polymer precursor.
  • Said vaporization step may optionally be preceded by a liquid injection step, which allows the injection of the liquid polymer precursor.
  • the process when the polymer precursor is in liquid form, the process may further comprise, preferably, at least one liquid injection step followed by a vaporization step, said steps liquid injection and vaporization being carried out prior to the photonic activation step, and said vaporization step for feeding gaseous polymer precursor.
  • the liquid injection step may be a pulsed liquid injection step.
  • the method when the polymer precursor is in liquid form, the method may further comprise at least one bubbling step, said bubbling step being carried out by passing at least one carrier gas in liquid polymer precursor prior to the photonic activation step, and said bubbling step for feeding gaseous polymer precursor.
  • the process when the polymer precursor is in solid form, the process further comprises at least one sublimation step, which allows the supply of gaseous polymer precursor. Said sublimation step is performed prior to the photonic activation step.
  • the method according to the invention therefore advantageously allows the supply of gaseous polymer precursor from a gaseous compound, liquid or solid.
  • the polymer precursor ready for photon activation is generally in gaseous form.
  • the mainly gaseous composition may comprise another compound in addition to the polymer precursor.
  • This other compound which is for example an initiator photo, can be provided at the same time and in the same phase as the polymer precursor feeding the photonic activation step.
  • This other compound is most often chosen from the group formed by solvents of the polymer precursor, photoinitiators and carrier gases.
  • the invention also relates to the case where the gaseous composition comprises, in addition to the polymer precursor, at least one element selected from the group consisting of solvents of the polymer precursor, photoinitiators and carrier gases.
  • carrier gases inert or not, mention may be made of nitrogen.
  • the photoinitiator is generally a compound that can be activated by UV at the selected wavelength, and form reactive radicals to initiate the polymerization reaction.
  • the initiator photo may be chosen, for example, from the family of benzyl ketals, benzoids, ⁇ -amino aromatic ketones, acylphosphine oxides, ⁇ -hydroxyketones, and phenylglyoxylates.
  • the photoinitiator is particularly preferably chosen from the following compounds: 1-hydroxy-cyclohexyl-phenylketone (IRGACURE® 184 marketed by CIBA) and 2-hydroxy-2-methyl-1-phenyl-1-propanone (DAROCUR® 1173 marketed by CIBA).
  • the gas phase deposition step is carried out in such a way that the gaseous polymer precursor alone or mixed, arrives on the substrate in a gaseous phase flow perpendicular to the surface of the substrate.
  • this makes it possible to better control the thickness of the polymer film as well as the reproducibility of such a deposit.
  • the substrate further moves in a direction perpendicular to said gaseous phase flow, thereby continuously depositing a large area of polymeric film, and allowing better control of the deposit.
  • the substrate further rotates in a plane perpendicular to said gaseous phase flow, thereby continuously depositing a large area of polymer film, and which allows better control of the deposit.
  • the liquid partially coated with the polymer film deposited according to the process of the invention is for example selected from the group consisting of oils, organic solvents, high or low boiling liquids containing at least one dye sensitive to the temperature and UV, preferably a UV-sensitive dye, for example a photochromic dye.
  • the invention also relates to a device that is particularly useful for carrying out the method as described above.
  • such a device is a chemical vapor deposition device comprising at least one photonic activation chamber, at least one gas phase deposition chamber for receiving a substrate, at least one reagent supplying means. of the photonic activation chamber, the device being such that the two chambers are distinct so that the photonic activation is not carried out in the vicinity of the substrate, and that it comprises at least one means of circulation of gas since the photonic activation chamber to the deposition chamber in the gas phase, said device being characterized in that the reagent supplying means is a liquid injection mode associated with a vaporization means.
  • the gas circulation means from the photonic activation chamber to the gas phase deposition chamber may be a leads.
  • This duct may be able to be heated, that is to say associated with at least one heating means.
  • the photonic activation chamber is able to be heated. This can help control the temperature of the compounds present in this chamber.
  • the gas phase deposition chamber is capable of being heated or cooled. This can control the temperature of the compounds present in these chambers.
  • said device further comprises a mixing chamber located upstream of the activation chamber, in the gas flow direction, said mixing chamber being connected to at least one reagent supplying means of the reaction chamber. mixture and at least one carrier gas supply means, said mixing chamber being further capable of mixing at least one gas and at least one reagent.
  • a mixing chamber located upstream of the activation chamber, in the gas flow direction, said mixing chamber being connected to at least one reagent supplying means of the reaction chamber. mixture and at least one carrier gas supply means, said mixing chamber being further capable of mixing at least one gas and at least one reagent.
  • the presence of at least two distinct means of feeding advantageously allows the adjustment of the proportions and total flow of the species present in the mixing chamber.
  • the reagent supply means In the case where the reagent supply means is in a mixing chamber, it is generally not present in photonic activation chamber.
  • the reagent supplying means in the mixing chamber is then the reagent supplying means of the photonic activation chamber.
  • the mixing chamber is able to be heated. This can help control the temperature of the compounds present in this chamber.
  • the reagent supply means which feeds the mixing chamber or the photonic activation chamber, is a liquid injection means, pulsed or not, preferably a pulsed liquid injection means.
  • the liquid injection means is associated with a vaporization means.
  • the reagent supply means may also be a simple supply line, for example liquid, associated with said vaporization means.
  • the reagent supply means may also be a gas supply means.
  • the gaseous feed means is fed with at least one means of vaporization, bubbling or sublimation.
  • a sublimation means makes it possible to feed the gas supply means, which is a simple duct, heated or not, opening into the photonic activation chamber or the mixing chamber.
  • the device may further comprise at least one of the vaporization means, the bubbling means and the sublimation means, and preferably the device further comprises a vaporization means.
  • the device further comprises at least one means for regulating the total pressure in the deposition chamber.
  • this allows a structural homogeneity and properties of the deposit.
  • Two variants of the device according to the invention are represented in Figures 1 to 3 , depending on whether the polymer precursor is liquid (combination of Figures 1 and 2 , first variant) or gaseous (combination of Figures 1 and 3 second variant).
  • the device 1 comprises a supply duct 10 in cash, in particular reactive, a supply duct 11 in at least one carrier gas, for example such that nitrogen N 2 , these two lines 10 and 11 feeding a mixing chamber R.
  • the carrier gas is an inert gas of transport, and advantageously makes it possible to adjust the dilution and the total flow rate of the gaseous phase which passes through the UV activation zone.
  • Zone Z comprises four lamps, of which two UV lamps 42 and 43 are represented on the figure 1 , intended to activate any reactive compound (UV at the wavelength used) which passes through a chamber 4 located within zone Z.
  • Chamber 4 is the photonic activation chamber according to the invention.
  • the chamber 4 consists of a quartz tube.
  • the four lamps in Zone Z typically work at 250 nanometers. But another quantity of lamps and another wavelength value may also be chosen by those skilled in the art.
  • the chamber 4 is fed with the species, in particular the reactive species, coming from the chamber R, via the conduit 12.
  • a gas flow means (not shown), which is for example a conduit, from the chamber 4 to a deposition chamber 5 which is the gas phase deposition chamber of the invention.
  • the chamber 5 is situated downstream and below, vertically, of the chamber 4.
  • An arrow F indicates a possibility of translational displacement of the substrate 6 so that the polymer film is deposited as regularly as possible and over as wide a surface as possible of the substrate 6.
  • An air vent valve 7 is associated with the deposition chamber 5.
  • a duct 8 supplies a pressure regulation chamber 9 from the chamber 5.
  • the chamber 9 is supplied by a pumping duct 14 and is connected at the output to a pressure regulating conduit 13, which allows the surplus of gas to be evacuated.
  • the assembly (8, 9, 13, 14) constitutes a means of regulating the total pressure in the chamber 5, in the form of a pumping system with automatic regulation of the pressure.
  • the device 1 makes it possible to produce thin films of polymers, in particular at a pressure close to 1 Torr (ie 100 Pa), and with a mode of activation of the gaseous phase and only of the gaseous phase .
  • FIG 2 schematically represents the chamber R L mixing and vaporization, in the case where the polymer precursor is liquid, and the feed device upstream of this chamber R L , in the context of the first variant of the device according to the invention combining Figures 1 and 2 .
  • the chamber R L comprises at least one vaporization means (not shown), generally consisting of at least one heating means.
  • the conduit 10 opens onto a pulsed liquid injection system 37.
  • the feed liquid of the chamber R L comprises either a cleaning solvent or a monomer (which is the reagent).
  • a pressurized solvent tank 15 and a liquid monomer reservoir (or in solution) pressurized 16 can supply, respectively via a conduit 20 regulated by a valve 17 and a conduit 21 regulated by a valve 18, a conduit 10.
  • the conduit 10 opens on the injector 37 which feeds the mixing and vaporization chamber R L.
  • the chamber R L provides via the conduit 12 a gas flow supplying the chamber 4. Said gas flow comprises the reagent in the gaseous state.
  • the injector 37 is preferably cleaned with a suitable liquid product, such as the cleaning solvent, after each test.
  • the figure 3 schematically represents the mixing chamber R G , in the case where the polymer precursor is gaseous, and the supply device upstream of this chamber R G , in the context of the second variant of the device according to the invention combining the Figures 1 and 3 .
  • the reagent supply means is the conduit 10, which is fed by sublimation means (23, 24, 25, 26, 27, 28).
  • the gaseous composition comprising the reagent generally comprises other species such as solvent (s), one or more carrier gases, or one or more photoinitiators.
  • the feed gas stream comprises an initiator photo, a carrier gas and a monomer.
  • a solid monomer reservoir 32 regulated by valves 23, 24, and 25, and a carrier gas feed line 34 respectively supply carrier gas and sublimed monomer via a controlled conduit 36. by a valve 22, the mixing duct 10.
  • the conduit 10 opens on the mixing chamber R G.
  • the gaseous composition that leaves said chamber R G through line 12 comprises the monomer reagent, the carrier gas and the initiator photo in the gaseous state.
  • the invention has been implemented according to illustrative and nonlimiting examples, by the first variant of the device according to the invention shown on the Figures 1 and 2 .
  • the reactive product or products were liquid. They were initially placed in the reservoir 16. Pressure was applied to bring them via the conduit 10 to the pulsed injector 37. This injector 37 made it possible to generate a spray, which was then completely vaporized in the chamber R L Spraying and mixing.
  • the gaseous reactive species arriving in the chamber R L were brewed by the arrival of carrier gas N 2 through line 11 and vaporized by a heating system of said chamber R L , at a temperature generally of 40 to 80 ° vs.
  • the reactive vapors were then entrained by the carrier gas in the conduit 12 and then in the quartz tube 4 transparent to the radiation used, where they underwent a photonic activation at 254 nm, by the four lamps (42, 43) arranged around the room 4.
  • the radiation-activated vapors were then conducted to the deposition chamber where they condensed and polymerized on the substrate 6 placed in the center of the chamber 5.
  • the deposition chamber 5 was left at room temperature (about 20 ° C.). ° C).
  • Device 1 was equipped with a pumping system and automatic pressure regulation (8, 9, 13, 14). The unreacted reactive vapors were trapped in a liquid nitrogen trap (not shown on the
  • Hexadecane is a liquid that is too volatile (0.01 Torr vapor pressure, ie 1.33 Pa, at 40 ° C) to be encapsulated by the parylene process of COMELEC (where the operating pressure is 3.7 mTorr 0.5 Pa at 40 ° C).
  • the CVD deposit according to the invention therefore made it possible to produce a film of PHEMA encapsulating hexadecane, which is new. This results in a major interest in the method and the device according to the invention.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
EP10763819.9A 2009-09-17 2010-09-06 Procédé et dispositif de dépôt chimique en phase gazeuse d'un film polymère sur un substrat Active EP2477754B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0956386A FR2950080B1 (fr) 2009-09-17 2009-09-17 Procede et dispositif de depot chimique en phase gazeuse d'un film polymere sur un substrat
PCT/FR2010/051849 WO2011033208A1 (fr) 2009-09-17 2010-09-06 Procédé et dispositif de dépôt chimique en phase gazeuse d'un film polymère sur un substrat

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EP2477754A1 EP2477754A1 (fr) 2012-07-25
EP2477754B1 true EP2477754B1 (fr) 2018-01-10

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US (1) US20120177844A1 (zh)
EP (1) EP2477754B1 (zh)
JP (1) JP5805090B2 (zh)
CN (1) CN102630188B (zh)
FR (1) FR2950080B1 (zh)
WO (1) WO2011033208A1 (zh)

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EP2989229B1 (en) * 2013-04-25 2019-06-05 Polyvalor, Limited Partnership Method for the photo-initiated chemical vapor deposition (picvd) of coatings
KR101809653B1 (ko) 2013-12-06 2017-12-15 주식회사 엘지화학 발수성 및 발유성을 갖는 고분자 박막 및 이의 제조 방법
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KR102052719B1 (ko) 2016-06-27 2019-12-05 비아비 솔루션즈 아이엔씨. 광학 디바이스
JP6837930B2 (ja) 2016-06-27 2021-03-03 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． 高色度フレーク
JP2018028656A (ja) 2016-06-27 2018-02-22 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． 磁性物品
JP7110090B2 (ja) * 2018-12-28 2022-08-01 東京エレクトロン株式会社 基板処理方法および基板処理システム
CN114106711B (zh) * 2021-11-24 2023-06-27 中国工程物理研究院激光聚变研究中心 一种用于微小器件粘接的纳米胶连方法
CN115463803B (zh) * 2021-12-15 2023-09-22 上海交通大学 一种化学气相沉积装置以及高厚度Parylene-N膜的制备方法

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FR2950080A1 (fr) 2011-03-18
US20120177844A1 (en) 2012-07-12
CN102630188A (zh) 2012-08-08
JP2013505354A (ja) 2013-02-14
JP5805090B2 (ja) 2015-11-04
FR2950080B1 (fr) 2012-03-02
CN102630188B (zh) 2016-01-13
EP2477754A1 (fr) 2012-07-25
WO2011033208A1 (fr) 2011-03-24

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