EP2477754A1 - Procédé et dispositif de dépôt chimique en phase gazeuse d'un film polymère sur un substrat - Google Patents
Procédé et dispositif de dépôt chimique en phase gazeuse d'un film polymère sur un substratInfo
- Publication number
- EP2477754A1 EP2477754A1 EP10763819A EP10763819A EP2477754A1 EP 2477754 A1 EP2477754 A1 EP 2477754A1 EP 10763819 A EP10763819 A EP 10763819A EP 10763819 A EP10763819 A EP 10763819A EP 2477754 A1 EP2477754 A1 EP 2477754A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- chamber
- substrate
- gaseous
- polymer precursor
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 46
- 229920006254 polymer film Polymers 0.000 title claims abstract description 25
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 21
- 229920000642 polymer Polymers 0.000 claims abstract description 54
- 230000004913 activation Effects 0.000 claims abstract description 47
- 239000002243 precursor Substances 0.000 claims abstract description 46
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims description 57
- 238000000151 deposition Methods 0.000 claims description 40
- 230000008021 deposition Effects 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 37
- 238000002156 mixing Methods 0.000 claims description 25
- 239000012071 phase Substances 0.000 claims description 23
- 238000009834 vaporization Methods 0.000 claims description 22
- 230000008016 vaporization Effects 0.000 claims description 22
- 239000003153 chemical reaction reagent Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 21
- 239000012159 carrier gas Substances 0.000 claims description 20
- 239000000178 monomer Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 239000007792 gaseous phase Substances 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 10
- 238000000859 sublimation Methods 0.000 claims description 8
- 230000008022 sublimation Effects 0.000 claims description 8
- 230000005587 bubbling Effects 0.000 claims description 7
- 229920000052 poly(p-xylylene) Chemical class 0.000 claims description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 claims description 4
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 claims description 4
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- KAWOYOQFRXSZQI-UHFFFAOYSA-N 10366-05-9 Chemical compound C1CC(=CC=2)C(Cl)=CC=2CCC2=CC=C1C(Cl)=C2 KAWOYOQFRXSZQI-UHFFFAOYSA-N 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 2
- 125000004386 diacrylate group Chemical group 0.000 claims description 2
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical class OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 claims description 2
- 125000005395 methacrylic acid group Chemical class 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 229920001567 vinyl ester resin Polymers 0.000 claims description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 2
- -1 vinyl halides Chemical class 0.000 claims description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 8
- 239000003999 initiator Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 229920002338 polyhydroxyethylmethacrylate Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- ADLWOFHKMXUDKF-UHFFFAOYSA-N 2-amino-5-bromo-6-methyl-1h-pyrimidin-4-one Chemical compound CC=1NC(N)=NC(=O)C=1Br ADLWOFHKMXUDKF-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000001743 benzylic group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- GKCPCPKXFGQXGS-UHFFFAOYSA-N ditert-butyldiazene Chemical compound CC(C)(C)N=NC(C)(C)C GKCPCPKXFGQXGS-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012263 liquid product Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- FAQJJMHZNSSFSM-UHFFFAOYSA-N phenylglyoxylic acid Chemical class OC(=O)C(=O)C1=CC=CC=C1 FAQJJMHZNSSFSM-UHFFFAOYSA-N 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 1
- 150000004291 polyenes Chemical class 0.000 description 1
- 239000003211 polymerization photoinitiator Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/002—Pretreatement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
- B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
- B05D3/062—Pretreatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2203/00—Other substrates
- B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2203/00—Other substrates
- B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
- B05D2203/35—Glass
Definitions
- the invention relates to a method of chemical vapor deposition, also known as chemical vapor deposition (CVD), by which the deposition of a polymer film (or polymer film) is effected by activation. photonics of a reactive gas phase.
- CVD chemical vapor deposition
- the CVD deposition of polymer films is of particular interest to the electronic, medical, defense, watchmaking, pharmaceutical, and nanotechnologies.
- the coating of parylene®, or poly-p-xylylene, deposited by CVD has many characteristics very interesting for these industries.
- the deposition is carried out under vacuum evaporation at room temperature, in the absence of solvent, and gives rise to the production of a semi-crystalline transparent film.
- the deposition process is known as the Gorham method (Gorham WF, "A New Genetic Synthetic Method for the Preparation of Linear Poly-p-xylylenes", J. Polym Sci.A-1, 4 (1996) 3027) and is generally implemented by COMELEC, according to the teaching of patent EP 1 672 394 B1 of which it is co-holder.
- an exemplary embodiment describes a CVD process operated in the presence of a gaseous monomer, glycidyl methacrylate (GMA), and a gaseous photoinitiator, 2,2'-azobis (2-methylpropane) ( ABMP).
- GMA gaseous monomer
- ABMP gaseous photoinitiator
- a poly (glycidyl methacrylate) film (PGMA) is thus deposited on a silica substrate.
- Photo-initiation is performed in a vacuum chamber that contains the substrate, equipped with an external source of UV light, at an intensity of 350 to 400 nanometers.
- the present patent application aims to remedy the disadvantages of the prior art.
- the invention relates to a process for chemical vapor deposition of a polymer film on a substrate, said method being characterized in that it comprises the following two distinct successive steps:
- a step of photonic activation of the gas phase in which a photon activation energy is supplied to at least one gaseous polymer precursor present in a predominantly gaseous composition
- a gas phase deposition step in which the activated gaseous polymer precursor, resulting from the photonic activation step, is deposited on a substrate, so as to form a polymer film on the substrate, the total pressure of the gas phase being in a range of 10 2 to 10 5 Pa.
- the photon activation according to the invention is not carried out in the vicinity of the substrate.
- the substrate and the film growing on the substrate are advantageously protected from possible degradation by photon activation.
- the photonic activation makes it possible to selectively supply energy so as to decompose the polymer precursors, without disturbing the substrate and the gas phase in the vicinity of the substrate.
- Another advantage of the invention is that the process is particularly reliable and industrializable.
- Photon activation radiation is generally UV (or Ultra Violet) radiation, most often at a wavelength of 200 to 400 nm.
- the substrate is generally solid and silica, glass, quartz, polymer, or metal.
- the substrate can even be photosensitive since, in the method of the invention, the substrate is not irradiated by photon activation radiation.
- the substrate may also include at least one cavity in which liquid may be deposited, which is generally a microcuvette.
- a microcuvette comprises at least one wall, most often made of polymer (organic, inorganic or hybrid, i.e. inorganic-organic mixture), silica, glass or quartz, preferably of polymer. This polymer is also called resin.
- the polymer film at least partially covers the liquid deposited on the substrate and preferably at least partly the substrate adjacent to said liquid. This is the case in particular when the polymer film is deposited on a substrate comprising at least one microcuvette in which at least one liquid is deposited.
- the liquid deposited on the substrate which is thus at least partially covered by the polymer film generally has an inert nature with respect to the substrate and especially, to the polymer, to the conditions for carrying out the process of the invention.
- the method according to the invention makes it possible to encapsulate a liquid that is initially present on the substrate, that is to say to completely wrap said liquid with a polymer film and a portion of the substrate. Most often, the liquid is enclosed in an envelope consisting of a portion of the polymer film and a portion of the substrate.
- This envelope can be waterproof or not.
- the substrate may be formed of a plurality of microcups, each microcuvette having at least one common wall with another microcuvette, and the deposited film according to the invention may be sealed and seal all the microcuvettes in which rests at least one liquid, or only at least two microcuvettes. It is also possible that the film deposited according to the invention is not waterproof, the liquids of the different microcuvettes can be mixed together.
- the process according to the invention in which a photon activation is not carried out in the vicinity of the substrate, makes it possible to deposit a polymer film on a liquid having a low saturation vapor pressure of liquid at the deposition temperature. .
- said liquid has a saturation vapor pressure of less than 100 Pa, preferably less than 10 Pa, at the deposition temperature.
- this saturation vapor pressure is generally lower than the total pressure of the gaseous phase of a certain ratio, for example from 10 to 100.
- patent EP 1 672 394 B1 mentions a total pressure in the deposition chamber of 7 Pa at the deposition temperature, and indicates that the saturation vapor pressure of the liquid to be encapsulated must be less than this pressure, and ideally less than 0.7 Pa at the deposition temperature. According to the invention, the working pressure can therefore be significantly and advantageously greater than the working pressure of the parylene deposition process according to the prior art.
- the process according to the invention can advantageously be carried out at a deposition pressure close to atmospheric pressure and / or at a temperature close to ambient temperature (approximately 20 ° C.).
- the process according to the invention is such that the temperature of the gas phase is in a range of 20 to 100 ° C, preferably 50 to 70 ° C, in the photonic activation step.
- the process according to the invention is such that, in the gas phase deposition step, the total pressure of the gaseous phase is preferably in a range of 10 2 to 4.10 3 Pa, and the temperature of the substrate is in a range of -10 to 50 ° C, preferably 20 to 30 ° C.
- the polymer precursor is generally a photopolymerizable monomer at the wavelength of UV activation, and can generally be used with or without a polymerization photoinitiator.
- the precursor is preferably chosen from the group formed by the monomers: acrylic derivatives (such as epoxy acrylates, acrylate urethanes, acrylate polyesters), methacrylic derivatives, parylene derivatives, styrene derivatives, itaconic derivatives, fumaric derivatives, vinyl halides, vinyl esters, vinyl ethers, and heteroaromatic vinyls; and still more preferably selected from the group consisting of poly (ethylene glycol) diacrylate (PEGDA), poly (ethylene glycol) methacrylate (PEGMA), 2-hydroxyethyl methacrylate (HEMA), acrylic acid (AA ), ethyl acrylate (EA), methyl methacrylate (MMA) and di-chloro-di-p-xylylene (dichloro [2,2] paracycl
- thiol and polyene can also be a mixture, for example of thiol and polyene, or a multifunctional monomer such as a di or tri acrylate such as 1,6 hexanediol diacrylalate (HDDA) or pentaerythritol triacrylate (PETA), or diene such as divinyl benzene or butadiene or isoprene.
- a multifunctional monomer such as a di or tri acrylate such as 1,6 hexanediol diacrylalate (HDDA) or pentaerythritol triacrylate (PETA), or diene such as divinyl benzene or butadiene or isoprene.
- HDDA 1,6 hexanediol diacrylalate
- PETA pentaerythritol triacrylate
- diene such as divinyl benzene or butadiene or isoprene.
- the polymer precursor may be in gaseous form, in which case it feeds directly, alone or as a gas mixture, the photonic activation step.
- said polymer precursor can also be in liquid or solid form, in which case the process of the invention comprises at least one additional step, intended to provide the polymer precursor, alone or as a mixture, in gaseous form for step d photonic activation.
- the method according to the invention may further comprise at least one vaporization step, bubbling or sublimation, which allows the supply of gaseous polymer precursor.
- the polymer precursor may be in liquid form when it is either in liquid form or solubilized in a solvent itself liquid.
- the method when the polymer precursor is in liquid form, the method preferably further comprises at least one vaporization step, said vaporization step being carried out prior to the photonic activation step, and allowing the supply of gaseous polymer precursor.
- Said vaporization step may optionally be preceded by a liquid injection step, which allows the injection of the liquid polymer precursor.
- the process when the polymer precursor is in liquid form, the process may further comprise, preferably, at least one liquid injection step followed by a vaporization step, said steps liquid injection and vaporization being carried out prior to the photonic activation step, and said vaporization step for feeding gaseous polymer precursor.
- the liquid injection step may be a pulsed liquid injection step.
- the method when the polymer precursor is in liquid form, the method may further comprise at least one bubbling step, said bubbling step being carried out by passing from at least one carrier gas in the liquid polymer precursor prior to the photonic activation step, and said bubbling step for feeding gaseous polymer precursor.
- the method when the polymer precursor is in solid form, the method further comprises at least one sublimation step, which allows the supply of gaseous polymer precursor. Said sublimation step is performed prior to the photonic activation step.
- the method according to the invention therefore advantageously allows the supply of gaseous polymer precursor from a gaseous compound, liquid or solid.
- the polymer precursor ready for photon activation is generally in gaseous form.
- the mainly gaseous composition may comprise another compound in addition to the polymer precursor.
- This other compound which is for example an initiator photo, can be provided at the same time and in the same phase as the polymer precursor feeding the photonic activation step.
- This other compound is most often chosen from the group formed by solvents of the polymer precursor, photoinitiators and carrier gases.
- the invention also relates to the case where the gaseous composition comprises, in addition to the polymer precursor, at least one element selected from the group consisting of solvents of the polymer precursor, photoinitiators and carrier gases.
- carrier gases inert or not, mention may be made of nitrogen.
- the photoinitiator is generally a compound that can be activated by UV at the selected wavelength, and form reactive radicals to initiate the polymerization reaction.
- the initiator photo may be selected, for example, from the family of benzylic ketals, benzoids, ⁇ -amino aromatic ketones, acylphosphine oxides, ⁇ -hydroxyketones, and phenylglyoxylates.
- the photoinitiator is particularly preferably chosen from the following compounds: 1-hydroxy-cyclohexyl-phenyl-ketone (IRGACURE® 184 marketed by CIBA) and 2-hydroxy-2-methyl-1-phenyl-1-propanone (DAROCUR® 1173 marketed by CIBA).
- the gas phase deposition step is carried out in such a way that the gaseous polymer precursor, alone or as a mixture, arrives on the substrate in a gaseous phase flow perpendicular to the surface of the gaseous phase. substrate.
- this makes it possible to better control the thickness of the polymer film as well as the reproducibility of such a deposit.
- the substrate further moves in a direction perpendicular to said gaseous phase flow, thereby continuously depositing a large area of polymeric film, and allowing better control of the deposit.
- the substrate further rotates in a plane perpendicular to said gaseous phase flow, thereby continuously depositing a large area of polymer film, and which allows better control of the deposit.
- the liquid partially coated with the polymer film deposited according to the process of the invention is for example selected from the group consisting of oils, organic solvents, high or low boiling liquids containing at least one dye sensitive to the temperature and UV, preferably a UV-sensitive dye, for example a photochromic dye.
- the invention also relates to a device that is particularly useful for implementing the method as described above.
- such a device is a chemical vapor deposition device comprising at least one photonic activation chamber, at least one gas phase deposition chamber, at least one reagent supplying means of the reaction chamber.
- photonic activation the device being such that the two chambers are distinct and that it comprises at least one means for circulating gas from the photonic activation chamber to the gas phase deposition chamber, said device being characterized in that the reagent supplying means is a liquid injection mode.
- the gas flow means from the photonic activation chamber to the gas phase deposition chamber may be a conduit.
- This duct may be able to be heated, that is to say associated with at least one heating means.
- the photonic activation chamber is able to be heated. This can help control the temperature of the compounds present in this chamber.
- the gas phase deposition chamber is capable of being heated or cooled. This can control the temperature of the compounds present in these chambers.
- said device further comprises a mixing chamber located upstream of the activation chamber, in the gas flow direction, said mixing chamber being connected to at least one reagent supplying means of the reaction chamber. mixture and at least one carrier gas supply means, said mixing chamber being further capable of mixing at least one gas and at least one reagent.
- a mixing chamber located upstream of the activation chamber, in the gas flow direction, said mixing chamber being connected to at least one reagent supplying means of the reaction chamber. mixture and at least one carrier gas supply means, said mixing chamber being further capable of mixing at least one gas and at least one reagent.
- the presence of at least two distinct means of feeding advantageously allows the adjustment of the proportions and total flow of the species present in the mixing chamber.
- the reagent supply means In the case where the reagent supply means is in a mixing chamber, it is generally not present in photonic activation chamber.
- the reagent supplying means in the mixing chamber is then the reagent supplying means of the photonic activation chamber.
- the mixing chamber is able to be heated. This can help control the temperature of the compounds present in this chamber.
- the reagent supply means which it feeds the mixing chamber or the photonic activation chamber, is a liquid injection means, pulsed or not, preferably a pulsed liquid injection means.
- the liquid injection means may be associated with a medium of vaporization.
- the reagent supply means may also be a simple supply line, for example liquid, associated with said vaporization means.
- the reagent supply means may also be a gas supply means.
- the gaseous feed means is fed with at least one means of vaporization, bubbling or sublimation.
- a sublimation means makes it possible to feed the gas supply means, which is a simple duct, heated or not, opening into the photonic activation chamber or the mixing chamber.
- the device may further comprise at least one of the vaporization means, the bubbling means and the sublimation means, and preferably the device further comprises a vaporization means.
- the device further comprises at least one means for regulating the total pressure in the deposition chamber.
- this allows a structural homogeneity and properties of the deposit.
- FIG. 1 shows schematically a device according to the invention comprising a mixing chamber R;
- FIG. 2 shows schematically the chamber R, in the case where the polymer precursor is liquid and where the chamber R is a chamber RL mixing and vaporization, and the supply device upstream of the chamber RL ;
- FIG. 3 schematically represents the chamber R, here RG, in the case where the polymer precursor is gaseous, and the supply device upstream of this chamber RG.
- Two variants of the device according to the invention are represented in FIGS. to 3, depending on whether the polymer precursor is liquid (combination of Figures 1 and 2, first variant) or gaseous (combination of Figures 1 and 3, second variant).
- the device 1 comprises a supply duct 10 in cash, in particular reactive, a feed duct 1 1 in at least one carrier gas, for example such as nitrogen N2, these two ducts 10 and 11 supplying a fuel. mixing chamber R.
- the carrier gas is an inert gas of transport, and advantageously makes it possible to adjust the dilution and the total flow rate of the gaseous phase which passes through the UV activation zone.
- Zone Z comprises four lamps, of which two UV lamps 42 and 43 are shown in FIG. 1, intended to activate any reactive compound (UV at the wavelength used) which passes through a chamber 4 located within the zone Z.
- the chamber 4 is the photonic activation chamber according to the invention.
- the chamber 4 consists of a quartz tube.
- the four lamps in Zone Z typically work at 250 nanometers. But another quantity of lamps and another wavelength value may also be chosen by those skilled in the art.
- the chamber 4 is fed with the species, in particular the reactive species, coming from the chamber R, via the conduit 12.
- a gas flow means (not shown), which is for example a conduit, from the chamber 4 to a deposition chamber 5 which is the gas phase deposition chamber of the invention.
- the chamber 5 is located downstream and below, vertically, the chamber 4.
- An arrow F indicates a possibility of translational displacement of the substrate 6 so that the polymer film is deposited as regularly as possible and over as wide a surface as possible of the substrate 6.
- An air vent valve 7 is associated with the deposition chamber 5.
- a duct 8 supplies a pressure regulation chamber 9 from the chamber 5.
- the chamber 9 is supplied by a pumping duct 14 and is connected at the output to a pressure regulating conduit 13, which allows the surplus of gas to be evacuated.
- the assembly (8, 9, 13, 14) constitutes a means of regulating the total pressure in the chamber 5, in the form of a pumping system with automatic regulation of the pressure.
- the device 1 makes it possible to produce thin films of polymers, in particular at a pressure close to 1 Torr (ie 100 Pa), and with a mode of activation of the gaseous phase and only of the gaseous phase .
- FIG. 2 diagrammatically represents the mixing and vaporization chamber RL, in the case where the polymer precursor is liquid, as well as the supply device upstream of this chamber RL, in the context of the first variant of the device according to FIG. invention combining FIGS. 1 and 2.
- the chamber RL comprises at least one vaporization means (not shown), generally consisting of at least one heating means.
- the conduit 10 opens onto a pulsed liquid injection system 37.
- the liquid supplying the chamber RL comprises either a cleaning solvent or a monomer (which is the reagent).
- a pressurized solvent tank 15 and a liquid monomer reservoir (or in solution) pressurized 16 can supply, respectively via a conduit 20 regulated by a valve 17 and a conduit 21 regulated by a valve 18, a conduit 10.
- the conduit 10 opens on the injector 37 which feeds the mixing and vaporization chamber RL.
- the chamber RL provides via the duct 12 a gas flow supplying the chamber 4. Said gas flow comprises the reagent in the gaseous state.
- FIG. 3 diagrammatically represents the mixing chamber RG, in the case where the polymer precursor is gaseous, and the supply device upstream of this chamber RG, in the context of the second variant of the device according to the invention combining the Figures 1 and 3.
- the reagent supplying means is the conduit 10, which is fed by sublimation means (23, 24, 25, 26, 27, 28).
- the gaseous composition comprising the reagent generally comprises other species such as solvent (s), one or more carrier gases, or one or more photoinitiators.
- the feed gas stream comprises an initiator photo, a carrier gas and a monomer.
- a solid monomer reservoir 32 regulated by valves 23, 24, and 25, and a carrier gas feed line 34 respectively supply carrier gas and sublimed monomer via a controlled conduit 36. by a valve 22, the mixing duct 1 0.
- the conduit 1 0 opens on the mixing chamber RG-
- the gaseous composition exiting said chamber RG through the conduit 12 comprises the monomer reagent, the carrier gas and the initiator photo in the gaseous state.
- the invention has been implemented according to illustrative and nonlimiting examples, by the first variant of the device according to the invention shown in FIGS. 1 and 2.
- the reactive product or products were liquid. They were initially placed in the tank 16. A pressure was applied to bring them via the conduit 10 to the pulsed injector 37. This injector 37 made it possible to generate a spray, which was then completely vaporized in the RL chamber. vaporization and mixing.
- the gaseous reactive species arriving in the chamber RL were stirred by the arrival of carrier gas N 2 through line 11 and vaporized by means of a heating system of said chamber RL, at a temperature generally of 40 to 80 ° C. .
- the reactive vapors were then entrained by the carrier gas in the conduit 12 and then in the quartz tube 4 transparent to the radiation used, where they underwent a photonic activation at 254 nm, by the four lamps (42, 43) arranged around the room 4.
- the radiation-activated vapors were then conducted to the deposition chamber where they condensed and polymerized on the substrate 6 placed in the center of the chamber 5.
- the deposition chamber 5 was left at room temperature (about 20 ° C.). ° C).
- Device 1 was equipped with a pumping system and automatic pressure regulation (8, 9, 13, 14). Unreacted reactive vapors were trapped in a liquid nitrogen trap (not shown in Figure 1) at the outlet of the deposition chamber.
- the deposition process according to the invention has been successfully applied to a few cases.
- the deposited polymer was poly (acrylic acid) (PAA). It was made from the liquid monomer: acrylic acid (vapor pressure: 5.33 Torr or 71 1 Pa at 20 ° C, viscosity 1, 3 cp at 25 ° C) and without addition of photoinitiator.
- the silicon substrate was at room temperature and the deposition pressure was 20 Torr (2667 Pa), the carrier gas flow (N 2 ) being 500 sccm (0.845 Pa.m 3 .s -1 ).
- the deposited polymer was poly (methyl methacrylate) (PMMA).
- Hexadecane was encapsulated with poly (hydroxyethyl methacrylate) (PHEMA). Hexadecane does not solubilize poly (hydroxyethyl methacrylate) or its monomer. Hexadecane could be successfully encapsulated under the conditions described in Example 2 for deposition with PMMA.
- PHEMA poly (hydroxyethyl methacrylate)
- Hexadecane is a too volatile liquid (vapor pressure of 0.01 Torr, ie 1.33 Pa, at 40 ° C) to be encapsulated by the parylene process of COMELEC (where the operating pressure is 3.7 mTorr 0.5 Pa at 40 ° C).
- the CVD deposit according to the invention therefore made it possible to produce a film of PHEMA encapsulating hexadecane, which is new. This results in a major interest in the method and the device according to the invention.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR0956386A FR2950080B1 (fr) | 2009-09-17 | 2009-09-17 | Procede et dispositif de depot chimique en phase gazeuse d'un film polymere sur un substrat |
PCT/FR2010/051849 WO2011033208A1 (fr) | 2009-09-17 | 2010-09-06 | Procédé et dispositif de dépôt chimique en phase gazeuse d'un film polymère sur un substrat |
Publications (2)
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EP2477754A1 true EP2477754A1 (fr) | 2012-07-25 |
EP2477754B1 EP2477754B1 (fr) | 2018-01-10 |
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EP10763819.9A Active EP2477754B1 (fr) | 2009-09-17 | 2010-09-06 | Procédé et dispositif de dépôt chimique en phase gazeuse d'un film polymère sur un substrat |
Country Status (6)
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US (1) | US20120177844A1 (fr) |
EP (1) | EP2477754B1 (fr) |
JP (1) | JP5805090B2 (fr) |
CN (1) | CN102630188B (fr) |
FR (1) | FR2950080B1 (fr) |
WO (1) | WO2011033208A1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102010010819A1 (de) * | 2010-03-10 | 2011-09-15 | Osram Opto Semiconductors Gmbh | Verfahren und Vorrichtung zur Herstellung einer Parylen-Beschichtung |
WO2014172789A1 (fr) | 2013-04-25 | 2014-10-30 | Polyvalor, Limited Partnership | Procédés d'application de revêtements par dépôt chimique en phase vapeur photo-amorcé (picvd) et revêtements obtenus par ces procédés |
KR101809653B1 (ko) | 2013-12-06 | 2017-12-15 | 주식회사 엘지화학 | 발수성 및 발유성을 갖는 고분자 박막 및 이의 제조 방법 |
CN104258473B (zh) * | 2014-09-29 | 2016-01-13 | 上海交通大学 | 纺丝增强的聚对二甲苯复合薄膜及其制备方法 |
KR101793776B1 (ko) * | 2014-11-20 | 2017-11-03 | 주식회사 엘지화학 | iCVD층의 형성방법 |
US20170368866A1 (en) * | 2016-06-27 | 2017-12-28 | Viavi Solutions Inc. | High chromaticity pigment flakes and foils |
US10928579B2 (en) | 2016-06-27 | 2021-02-23 | Viavi Solutions Inc. | Optical devices |
DK3263650T3 (da) | 2016-06-27 | 2019-11-04 | Viavi Solutions Inc | Magnetiske genstande |
US11214689B2 (en) | 2016-06-27 | 2022-01-04 | Viavi Solutions Inc. | High chroma flakes |
JP7110090B2 (ja) * | 2018-12-28 | 2022-08-01 | 東京エレクトロン株式会社 | 基板処理方法および基板処理システム |
CN114106711B (zh) * | 2021-11-24 | 2023-06-27 | 中国工程物理研究院激光聚变研究中心 | 一种用于微小器件粘接的纳米胶连方法 |
CN115463803B (zh) * | 2021-12-15 | 2023-09-22 | 上海交通大学 | 一种化学气相沉积装置以及高厚度Parylene-N膜的制备方法 |
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JPS60253212A (ja) * | 1984-05-30 | 1985-12-13 | Toshiba Mach Co Ltd | 気相成長装置 |
JP2566914B2 (ja) * | 1985-12-28 | 1996-12-25 | キヤノン株式会社 | 薄膜半導体素子及びその形成法 |
US4919077A (en) * | 1986-12-27 | 1990-04-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor producing apparatus |
JP3258439B2 (ja) * | 1993-04-14 | 2002-02-18 | 株式会社半導体エネルギー研究所 | 気相反応装置 |
US5804259A (en) * | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
US5863327A (en) * | 1997-02-10 | 1999-01-26 | Micron Technology, Inc. | Apparatus for forming materials |
US6020458A (en) * | 1997-10-24 | 2000-02-01 | Quester Technology, Inc. | Precursors for making low dielectric constant materials with improved thermal stability |
US6503564B1 (en) * | 1999-02-26 | 2003-01-07 | 3M Innovative Properties Company | Method of coating microstructured substrates with polymeric layer(s), allowing preservation of surface feature profile |
US20050145177A1 (en) * | 2003-12-30 | 2005-07-07 | Mcswiney Michael | Method and apparatus for low temperature silicon nitride deposition |
DE602004006005T8 (de) * | 2004-12-16 | 2008-04-10 | Comelec S.A. | Verfahren zur Herstellung einer Vorrichtung mit einer Kunststoffmembran und so erhaltene Vorrichtung |
US7514119B2 (en) * | 2005-04-29 | 2009-04-07 | Linde, Inc. | Method and apparatus for using solution based precursors for atomic layer deposition |
JP4690148B2 (ja) * | 2005-09-01 | 2011-06-01 | 株式会社アルバック | 有機薄膜製造方法および光cvd装置 |
US7482289B2 (en) * | 2006-08-25 | 2009-01-27 | Battelle Memorial Institute | Methods and apparatus for depositing tantalum metal films to surfaces and substrates |
EP2122007A4 (fr) * | 2007-02-27 | 2011-10-26 | Sixtron Advanced Materials Inc | Procédé de formation d'un film sur un substrat |
US7638441B2 (en) * | 2007-09-11 | 2009-12-29 | Asm Japan K.K. | Method of forming a carbon polymer film using plasma CVD |
-
2009
- 2009-09-17 FR FR0956386A patent/FR2950080B1/fr active Active
-
2010
- 2010-09-06 JP JP2012529325A patent/JP5805090B2/ja active Active
- 2010-09-06 US US13/496,304 patent/US20120177844A1/en not_active Abandoned
- 2010-09-06 WO PCT/FR2010/051849 patent/WO2011033208A1/fr active Application Filing
- 2010-09-06 EP EP10763819.9A patent/EP2477754B1/fr active Active
- 2010-09-06 CN CN201080041590.2A patent/CN102630188B/zh active Active
Non-Patent Citations (1)
Title |
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See references of WO2011033208A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN102630188B (zh) | 2016-01-13 |
FR2950080A1 (fr) | 2011-03-18 |
EP2477754B1 (fr) | 2018-01-10 |
WO2011033208A1 (fr) | 2011-03-24 |
JP5805090B2 (ja) | 2015-11-04 |
CN102630188A (zh) | 2012-08-08 |
JP2013505354A (ja) | 2013-02-14 |
US20120177844A1 (en) | 2012-07-12 |
FR2950080B1 (fr) | 2012-03-02 |
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