EP2423747B1 - Membran für lithographiedruck und herstellungsverfahren dafür - Google Patents

Membran für lithographiedruck und herstellungsverfahren dafür Download PDF

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Publication number
EP2423747B1
EP2423747B1 EP10766760.2A EP10766760A EP2423747B1 EP 2423747 B1 EP2423747 B1 EP 2423747B1 EP 10766760 A EP10766760 A EP 10766760A EP 2423747 B1 EP2423747 B1 EP 2423747B1
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Prior art keywords
pellicle
film
support member
single crystal
lithography
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English (en)
French (fr)
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EP2423747A1 (de
EP2423747A4 (de
Inventor
Shoji Akiyama
Yoshihiro Kubota
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Definitions

  • the present invention relates to a pellicle for lithography and a manufacturing method thereof, and more specifically, to a pellicle for lithography which comprises as a pellicle film a silicon single crystal film, which is a material that is highly transmissive to extreme ultraviolet light (EUV light) and is chemically stable, and a manufacturing method thereof.
  • EUV light extreme ultraviolet light
  • unsolved technical problems with a pellicle for use in the EUV exposure include: (1) development of a material that is highly transmissive to EUV light and is chemically stable; (2) an arrangement for holding the transmissive film (pellicle film), which is necessarily a ultrathin film, under constant tension without slack; and (3) capability of being used under vacuum after the film is bonded to a photomask under normal pressure.
  • the problem of the above item (1) is particularly serious, and in practice, material development for a transmissive film that has high transmittance to EUV light and is chemically stable without being changed due to oxidation or the like are still far from realization.
  • Materials that have been used for conventional pellicle films are not transparent to the wavelength band of EUV light, and therefore they are not transmissive to EUV light. In addition, the materials have a problem of decomposition or degradation due to radiation of light. To date, no material that is fully transparent to the wavelength band of EUV light has been known; as a relatively highly transparent material, however, silicon has drawn attention and has been documented.
  • the silicon used in a pellicle for EUV exposure reported in the Document 1 is a silicon film deposited by a method such as sputtering. Since such a film is necessarily amorphous, the film has high absorptivity (absorption coefficient) to light in the EUV wavelength band.
  • the silicon used in a pellicle for EUV exposure reported in the Document 2 is as a premise a film deposited by a method such as CVD.
  • the silicon film since the silicon film is also amorphous or polycrystalline, the film has high absorptivity (absorption coefficient) to light in the EUV wavelength band.
  • a modest tensile stress is desirable on a silicon film bonded to a frame as a pellicle film.
  • the temperature should be at or a little more than the room temperature.
  • a strong stress is already introduced during deposition, such as sputtering and CVD processes.
  • these silicon films are not a single crystal silicon film, amorphous portions or grain boundaries included in the film cause absorptivity (absorption coefficient) to EUV light to increase, and therefore transmittance thereto to decrease. Moreover, these silicon films are chemically unstable and easily oxidizable. Therefore, these films are not practical because the transmittance to EUV light decreases over time.
  • ANONYMOUS "Method for a composite silicon-carbon pellicle for EUV lithography applications", IP.COM JOURNAL, IP.COM INC., WEST HENRIETTA, NY, US, (20040729), 1-8,10,12 , discloses a use of a composite silicon-carbon pellicle for extreme ultra violet (EUV) lithography applications.
  • EUV extreme ultra violet
  • US2008259291 discloses a pellicle for integrated circuit equipment operating in an EUV range, including a multi-layered structure of alternating layers.
  • the present invention has been made in view of the above problems, and it is an object thereof to provide a pellicle for lithography which comprises as a pellicle film a silicon single crystal film, which is a material that is highly transmissive to extreme ultraviolet light (EUV light) and is chemically stable, and a manufacturing method thereof.
  • EUV light extreme ultraviolet light
  • the present invention provides a pellicle for lithography as defined in claim 1.
  • the present invention further provides a method of manufacturing a pellicle for lithography as defined in claim 3.
  • a pellicle for lithography comprises: a support member including an outer frame portion and a porous portion that occupies an inner area surrounded by the outer frame portion; and a pellicle film of single crystal silicon supported by the porous portion.
  • the pellicle for lithography preferably comprises an anti-oxidizing film that covers the surface of the pellicle film.
  • the pellicle for lithography is preferably provided with a filter for transmitting a gas on a frame portion of the support member.
  • the support member may be of silicon crystal.
  • a manufacturing method is a manufacturing method of a pellicle for lithography including a support member including an outer frame portion and a porous portion that occupies an inner area surrounded by the outer frame portion and a pellicle film of single crystal silicon supported by the porous portion, the method comprising a support member forming step of partially removing a handle substrate of a SOI substrate to form the outer frame portion and the porous portion, the handle substrate having a single crystal silicon layer provided on a surface of the handle substrate via an insulating layer.
  • the partial removal of a handle substrate may be carried out by dry etching with silicon deep reactive ion etching (DRIE).
  • DRIE deep reactive ion etching
  • the manufacturing method of a pellicle for lithography may comprise a step of removing portions of the insulating layer exposed in the porous portion after the support member forming step.
  • the manufacturing method of a pellicle for lithography may comprise a step of polishing the handle substrate from the back side of the handle substrate into a thin sheet of 400 ⁇ m or smaller prior to the support member forming step.
  • the manufacturing method of a pellicle for lithography may comprise a step of providing a reinforcing substrate prior to the support member forming step on a side on which the single crystal silicon layer is located.
  • the manufacturing method of a pellicle for lithography may comprise a step of forming a protective film prior to the support member forming step on a side on which the single crystal silicon layer is located.
  • the step of forming a protective film is preferably carried out by depositing any of a silicon oxide film (SiO x ), a silicon nitride film (SiN x ), and a silicon oxynitride film (SiO x N y ).
  • the manufacturing method of a pellicle for lithography may comprise a step of forming an anti-oxidizing film prior to the support member forming step on a side on which the single crystal silicon layer is located.
  • the manufacturing method of a pellicle for lithography may comprise a step of forming an anti-oxidizing film in portions of the single crystal silicon layer exposed in the porous portion after the support member forming step.
  • the deposition of the anti-oxidizing film is preferably carried out by ion beam assisted deposition or gas cluster ion beam (GCIB) deposition.
  • GCIB gas cluster ion beam
  • the manufacturing method of a pellicle for lithography may comprise a step of providing a filter for transmitting a gas on the outer frame portion.
  • a pellicle for lithography comprises a support member including an outer frame portion and a porous portion that occupies an inner area surrounded by the outer frame portion and a pellicle film of single crystal silicon supported by the porous portion. Accordingly, a pellicle for lithography can be provided, which comprises as a pellicle film a silicon single crystal film, which is a material that is highly transmissive to extreme ultraviolet light (EUV light) and is chemically stable.
  • EUV light extreme ultraviolet light
  • a support member is formed by partially removing a handle substrate of a SOI substrate, which has a single crystal silicon layer provided on a surface of the handle substrate via an insulating layer, to form the outer frame portion and the porous portion, and the single crystal silicon layer supported by the porous portion is used as a pellicle film. Accordingly, it is possible to provide a manufacturing method of a pellicle for lithography which comprises as a pellicle film a silicon single crystal film, which is a material that is highly transmissive to extreme ultraviolet light (EUV light) and is chemically stable.
  • EUV light extreme ultraviolet light
  • silicon is a material that is relatively highly transparent to the wavelength band of EUV light
  • conventionally reported silicon films used in a pellicle for EUV exposure have problems of high absorptivity (absorption coefficient) of the films to light in the EUV wavelength band because they are formed by a method such as sputtering and CVD, making the films amorphous or polycrystalline. Therefore, the present inventors continuously studied a single crystal silicon film for use as a pellicle film and made the present invention.
  • Figure 1 is a graphical representation of an absorption coefficient of single crystal silicon film to light of a wavelength of approximately 13.5 nm compared with that of an amorphous silicon film.
  • the single crystal silicon film has the absorption coefficient of approximately 40% of that of the amorphous silicon film, which means that it is highly transmissive to light in the EUV wavelength band, and has excellent properties as a pellicle film.
  • absorption coefficients shown in Figure 1 see Edward D. Palik, ed., "Handbook of Optical Constants of Solids," Academic Press, Orlando (1985) (Document 3 ), for example.
  • the present inventors decided to use an SOI substrate that is provided with a single crystal silicon layer as the SOI layer thereof and continuously studied an approach of making use of the single crystal silicon layer as the pellicle film and processing an underlying substrate (handle substrate) of the SOI substrate to form a support member for the pellicle film.
  • a pellicle obtained by such an approach has not only an advantage of being highly transmissive to light in the EUV wavelength band, but also an advantage of lack of requirement for separately forming a pellicle film and a frame for supporting the pellicle film and thereafter providing the pellicle film on the frame in a stretched manner, as in the case of conventional pellicles.
  • Figures 2A and 2B are diagrams for illustrating a structure of a pellicle for lithography according to the present invention
  • Figure 2A is a bottom view
  • Figure 2B is a sectional view taken along a line A-A shown in Figure 2A
  • a pellicle for lithography according to the present invention comprises a pellicle film 10 of single crystal silicon, and the pellicle film 10 is supported by a support member 20 including an outer frame portion 20a and a porous portion 20b (mesh structure) that occupies an inner area surrounded by the outer frame portion 20a.
  • anti-oxidizing films 30a and 30b are provided to cover portions where the single crystal silicon film is exposed to the outside.
  • Reference numeral 40 in the figure denotes portions that once have been an insulator layer (BOX layer) of the SOI substrate.
  • Reference numerals 50a and 50b in the figure denote filters provided on the frame portion 20a of the support member 20, and internal pressure during the use of the pellicle can be regulated by a gas transmitting through the filters.
  • Figure 3 is an optical microscope photograph showing an enlarged mesh structure of a pellicle for lithography according to the present invention.
  • Reference character "M” in the figure denotes a mesh structure of the support member and reference character “P” denotes a portion of pellicle film of single crystal silicon seen in an aperture of the mesh structure.
  • a large number of apertures in a substantially hexagonal shape having a diameter of approximately 200 ⁇ m are formed in an inner area surrounded by the outer frame portion of the support member, and the spacing between the apertures is approximately 20 ⁇ m.
  • Portions of pellicle film of single crystal silicon can be observed through the apertures, and light during exposure will be radiated through the portions onto a photomask (reticle).
  • the handle substrate of the SOI substrate will be described by way of a silicon substrate; any other substrate may however be used, such as a glass substrate or a quartz substrate.
  • An SOI substrate for fabricating a pellicle of a configuration as described above may be an SOI substrate made up of single crystal silicon wafers, which have been crystal grown by CZ crystal growth, bonded together with an oxide film therebetween.
  • Such an SOI substrate may be obtained in a procedure as described below, for example.
  • hydrogen ions are first doped into the surface of the single crystal silicon substrate to form a uniform ion doped layer to a predetermined depth (average ion doping depth L) near the surface, and the surface is further activated by means of plasma processing or the like.
  • the first single crystal silicon substrate whose surface has been activated is then brought into close contact and bonded with a second single crystal silicon substrate, and a silicon layer is mechanically removed from the first single crystal silicon substrate with the aid of the ion doped layer. In this way, an SOI substrate that has a silicon layer (SOI layer) on the second single crystal silicon substrate is obtained.
  • a porous portion (mesh structure) in the inner area surrounded by the outer frame portion of the support member provided on the pellicle for lithography according to the present invention is formed because the thickness of a pellicle film of single crystal silicon of a pellicle for EUV must be thin, such as tens to hundreds of nanometers, and it is highly difficult to support such a thin pellicle film only with a pellicle frame (outer frame portion) in a stable manner while mechanical strength is secured.
  • the mesh structure is made of metal and assembled in such a way that an organic material is used as an adhesive to bond a pellicle film of amorphous silicon to the mesh structure.
  • an organic material is used as an adhesive to bond a pellicle film of amorphous silicon to the mesh structure.
  • it is difficult to bring the entire surface of the pellicle film in close contact with the mesh structure uniformly and accurately.
  • organic contamination caused by the adhesive occurring when the pellicle is used under vacuum. It is also highly difficult to regulate stresses on the pellicle film.
  • the present invention chooses to process the handle substrate of the SOI substrate into the support member. Specifically, the handle substrate is ground, polished, or otherwise thinned to a desired thickness from the back side, and the handle substrate is partially removed to form apertures that constitute a mesh structure. In such partial removal of a handle substrate, dry etching with silicon deep reactive ion etching (DRIE) widely used in MEMS and the like may be applied.
  • DRIE deep reactive ion etching
  • the single crystal silicon layer (SOI layer), which is to be used as a pellicle film, is left unetched because the etching stops (or the etching rate decreases extremely) at an insulator layer (BOX layer) such as silicon oxide film.
  • BOX layer insulator layer
  • the pellicle film of single crystal silicon is tightly coupled to the support member, sufficient mechanical strength can be assured. Without an adhesive, the contamination caused by residual organic materials and the like can also be avoided.
  • the anti-oxidizing film formed as in the aspects shown in Figures 2A and 2B can provide high oxidation resistance, which is required when a high power light source is used for exposure.
  • ion beam assisted deposition or gas cluster ion beam (GCIB) deposition can provide a dense film that is of high density close to theoretical density. Therefore, since high oxidation resistance can be obtained even with a thinner anti-oxidizing film, high transmittance may not be compromised.
  • GCIB gas cluster ion beam
  • a pellicle since a pellicle is usually used under vacuum, the internal pressure needs to be regulated.
  • a mechanism for such pressure regulation is required to be able to prevent contamination from entering when a gas passes in and out.
  • a filter such as ULPA, which can capture fine contaminations, or a metal filter is suitable. It is also important for these filters to have such a surface area that the pellicle film may not be expanded and contracted or damaged due to non-uniform pressure difference.
  • FIGs 4A to 4G are diagrams for illustrating a first example of manufacturing method of a pellicle for lithography according to the present invention.
  • an SOI substrate is provided ( Figure 4A ).
  • the SOI substrate has an SOI layer 10 of single crystal silicon on a handle substrate 20 via a BOX layer 40 of silicon oxide film.
  • the substrate may be ground, polished, or otherwise thinned on the handle substrate side to reduce the thickness to a desired thickness (for example, 400 ⁇ m or smaller). This is because an unnecessarily tall support member may be a burden on the subsequent etching process. With the thickness previously reduced on the handle substrate side, required time for the etching process may also be reduced.
  • an anti-oxidizing film 30a is formed on the SOI layer 10 of single crystal silicon, as necessary ( Figure 4B ).
  • a protective film 60 for protecting the SOI layer 10 may be provided on the surface where the SOI layer 10 is provided (here, on the anti-oxidizing film 30a), as necessary ( Figure 4C ).
  • An example of such a protective film includes a silicon oxide film (SiO x ), a silicon nitride film (SiN x ), and a silicon oxynitride film (SiO x N y ).
  • an etching mask 70 for forming a mesh structure is formed on the handle substrate (back side) ( Figure 4D ), and dry etching is performed such that uncovered areas where the etching mask 70 is absent constitute a porous portion.
  • etching mask 70 and the protective film 60 provided on the SOI layer side are then removed, and insulating layers, or the BOX layer 40, in areas exposed by the porous portion are further removed to obtain a pellicle for lithography with a pellicle film of single crystal silicon ( Figure 4F ).
  • an anti-oxidizing film 30b may be provided.
  • filters 50a and 50b for transmitting a gas are further provided on an outer frame portion 20a of a support member.
  • Figures 5A to 5J are diagrams for illustrating a second example of manufacturing method of a pellicle for lithography according to the present invention.
  • the difference between the first example as described above and the second example is that the second example includes a step of providing a reinforcing substrate 80 on the surface where a single crystal silicon layer of the SOI substrate is provided, prior to the step of forming a support member, in order to reinforce the mechanical strength of the SOI substrate ( Figure 5D ).
  • the SOI substrate may be unable to support itself and may warp, and the mechanical strength can be reinforced to avoid such inconvenience.
  • the reinforcing substrate 80 is provided to temporarily exert mechanical strength and is eventually removed ( Figure 5G ), the material thereof is not particularly limited.
  • An SOI substrate that was used had an SOI layer of 300 nm thick of silicon single crystal (Nearly Perfect Crystal: NPC) that has very low density of crystal defects, such as COP, bonded on a silicon substrate (handle substrate) of 200 mm diameter and 725 ⁇ m thick with a silicon thermal oxide film of 500 nm thick therebetween.
  • NPC Nearly Perfect Crystal
  • lithography was used to pattern an etching mask on the handle substrate side
  • DRIE was used to create a mesh structure
  • HF processing was finally performed to remove an exposed silicon thermal oxide film (BOX layer) in apertures so as to finish a pellicle. In this pellicle, no damage on the pellicle film of single crystal silicon was observed.
  • an SOI substrate that was used had an SOI layer of 300 nm thick of silicon single crystal (Nearly Perfect Crystal: NPC) that has very low density of crystal defects, such as COP, bonded on a silicon substrate (handle substrate) of 200 mm diameter and 725 ⁇ m thick with a silicon thermal oxide film of 500 nm thick therebetween.
  • NPC Nearly Perfect Crystal
  • a pellicle was finished in a similar procedure to Example 2 as described above, except that an SOI substrate that was used had an SOI layer of 100 nm thick of silicon single crystal (Nearly Perfect Crystal: NPC) that has very low density of crystal defects, such as COP, bonded on a silicon substrate (handle substrate) of 200 mm diameter and 725 ⁇ m thick with a silicon thermal oxide film of 500 nm thick therebetween.
  • NPC Nearly Perfect Crystal
  • an SOI substrate that was used had an SOI layer of 100 nm thick of silicon single crystal (Nearly Perfect Crystal: NPC) that has very low density of crystal defects, such as COP, bonded on a silicon substrate (handle substrate) of 200 mm diameter and 725 ⁇ m thick with a silicon thermal oxide film of 500 nm thick therebetween.
  • PECVD was used to deposite an oxide film to be used as a protective film to 3 ⁇ m on the SOI layer of the SOI substrate, and the protective film was thereafter bonded to a reinforcing substrate of Tempax glass.
  • FIG. 3 is an optical microscope photograph showing an enlarged mesh structure of a pellicle obtained in this way. As can be seen in the photograph, a good pellicle film was obtained without any deflection on the pellicle film of single crystal silicon.
  • a pellicle for lithography as defined in claim 1, which comprises as a pellicle film a silicon single crystal film, which is a material that is highly transmissive to extreme ultraviolet light (EUV light) and is chemically stable, and a manufacturing method thereof.
  • EUV light extreme ultraviolet light

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Claims (13)

  1. Pellikel für Lithographie, das Folgendes umfasst:
    ein Trägerelement (20), das Folgendes einschließt: ein Außenrahmenteil (20a) und ein poröses Teil (20b), das eine Innenfläche einnimmt, die von dem Außenrahmenteil (20a) umgeben ist; und
    einen Pellikelfilm (10) von einkristallinem Silicium, der von dem porösen Teil (20b) getragen wird,
    wobei das Pellikel für Lithographie weiter Folgendes umfasst: einen ersten Antioxidationsfilm (30a), der eine vordere Oberfläche des Pellikelfilms (10) bedeckt, und einen zweiten Antioxidationsfilm (30b), der exponierte Teile einer hinteren Oberfläche des Pellikelfilms (10) bedeckt, und
    die Antioxidationsfilme (30a, 30b) aus mindestens einem Material aus einer Gruppe von SiOx (einschließlich x = 2), SixNy (einschließlich x = 3, y = 4), SiON, SiC, Y2O3, YN, Mo, Ru und Rh sind.
  2. Pellikel für Lithographie nach Anspruch 1,
    wobei ein Filter (50a, 50b) für das Übertragen eines Gases auf einem Rahmenteil (20a) des Trägerelements (20) bereitgestellt ist; oder optional
    wobei das Trägerelement (20) aus Siliciumkristall ist.
  3. Herstellungsverfahren eines Pellikels für Lithographie, das Folgendes einschließt:
    ein Trägerelement (20), das Folgendes einschließt: ein Außenrahmenteil (20a) und ein poröses Teil (20b), das eine Innenfläche einnimmt, die von dem Außenrahmenteil (20a) umgeben ist, und einen Pellikelfilm (10) von einkristallinem Silicium, der von dem porösen Teil (20b) getragen wird, wobei das Verfahren Folgendes umfasst:
    einen das Trägerelement (20) bildenden Schritt des teilweisen Entfernens eines Handhabungssubstrats eines SOI-Substrats, um das Außenrahmenteil (20a) und das poröse Teil (20b) zu bilden, wobei das Handhabungssubstrat eine Schicht von einkristallinem Silicium aufweist, die auf einer Oberfläche des Handhabungssubstrats über eine Isolierschicht (40) bereitgestellt ist, das weiter Folgendes umfasst:
    einen Schritt des Entfernens von Teilen der Isolierschicht (40), die in dem porösen Teil (20a) nach dem das Trägerelement (20) bildenden Schritt exponiert wird,
    einen Schritt des Bildens eines ersten Antioxidationsfilms (30a) vor dem das Trägerelement (20) bildenden Schritt auf einer Seite, auf der sich die Schicht von einkristallinem Silicium befindet, und
    einen Schritt des Bildens eines zweiten Antioxidationsfilms (30b) in Teilen der Schicht von einkristallinem Silicium, die in dem porösen Teil (20b) nach dem das Trägerelement (20) bildenden Schritt exponiert wird,
    wobei das Bilden eines Antioxidationsfilms (30a, 30b) durch Abscheiden eines Films von mindestens einem Material aus einer Gruppe von SiOx (einschließlich x = 2), SixNy (einschließlich x = 3, y = 4), SiON, SiC, Y2O3, YN, Mo, Ru und Rh durchgeführt wird.
  4. Herstellungsverfahren eines Pellikels für Lithographie nach Anspruch 3, wobei die teilweise Entfernung eines Handhabungssubstrats durch Trockenätzen mit reaktivem Ionentiefenätzen (DRIE) von Silicium durchgeführt wird.
  5. Herstellungsverfahren eines Pellikels für Lithographie nach Anspruch 3 oder 4, das weiter einen Schritt des Schleifens des Handhabungssubstrats von der hinteren Seite des Handhabungssubstrats zu einer dünnen Platte von 400 µm oder kleiner vor dem das Trägerelement bildenden Schritt umfasst.
  6. Herstellungsverfahren eines Pellikels für Lithographie nach Anspruch 3 oder 4, das weiter einen Schritt des Bereitstellens eines verstärkenden Substrats (80) vor dem das Trägerelement (20) bildenden Schritt auf einer Seite umfasst, auf der sich die Schicht von einkristallinem Silicium befindet.
  7. Herstellungsverfahren eines Pellikels für Lithographie nach Anspruch 3 oder 4, das weiter einen Schritt des Bildens eines Schutzfilms (60) vor dem das Trägerelement (20) bildenden Schritt auf einer Seite umfasst, auf der sich die Schicht von einkristallinem Silicium befindet.
  8. Herstellungsverfahren eines Pellikels für Lithographie nach Anspruch 7, wobei der Schritt des Bildens eines Schutzfilms (60) durch Abscheiden eines von einem Siliciumoxidfilm (SiOx), einem Siliciumnitridfilm (SiNx) und einem Siliciumoxynitridfilm (SiOxNy) durchgeführt wird.
  9. Herstellungsverfahren eines Pellikels für Lithographie nach Anspruch 3 oder 4, wobei die Abscheidung des Antioxidationsfilms (30a, 30b) durch ionenstrahlgestützte Abscheidung oder Gascluster-Ionenstrahl (GCIB)-Abscheidung durchgeführt wird.
  10. Herstellungsverfahren eines Pellikels für Lithographie nach Anspruch 3 oder 4, das weiter einen Schritt des Bereitstellens eines Filters (50a, 50b) für das Übertragen eines Gases auf dem Außenrahmenteil (20a) umfasst.
  11. Fotomaske mit Pellikel, die Folgendes umfasst:
    eine Fotomaske und
    das Pellikel nach Anspruch 1 oder 2.
  12. Expositionsverfahren, das Folgendes umfasst:
    Durchführen von EUV-Exposition unter Verwendung der Fotomaske mit Pellikel nach Anspruch 11.
  13. Herstellungsverfahren eines Halbleiterbauteils, das Folgendes umfasst:
    Durchführen von EUV-Exposition unter Verwendung der Fotomaske mit Pellikel nach Anspruch 11.
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Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101572269B1 (ko) * 2009-09-14 2015-12-04 에스케이하이닉스 주식회사 극자외선 마스크를 보호하는 펠리클 제조 방법
JP2012151158A (ja) * 2011-01-17 2012-08-09 Shin Etsu Chem Co Ltd Ｅｕｖ用ペリクル膜及びペリクル、並びに該膜の製造方法
JP5552095B2 (ja) * 2011-06-21 2014-07-16 信越化学工業株式会社 Ｅｕｖ用レチクル
JP5867046B2 (ja) * 2011-12-12 2016-02-24 富士通株式会社 極紫外露光マスク用防塵装置及び極紫外露光装置
JP5748347B2 (ja) * 2012-02-09 2015-07-15 信越化学工業株式会社 Ｅｕｖ用ペリクル
US9599912B2 (en) * 2012-05-21 2017-03-21 Asml Netherlands B.V. Lithographic apparatus
JP5711703B2 (ja) * 2012-09-03 2015-05-07 信越化学工業株式会社 Ｅｕｖ用ペリクル
JP6084681B2 (ja) 2013-03-15 2017-02-22 旭化成株式会社 ペリクル膜及びペリクル
WO2014188710A1 (ja) 2013-05-24 2014-11-27 三井化学株式会社 ペリクル、及びこれらを含むｅｕｖ露光装置
JP2015018228A (ja) * 2013-06-10 2015-01-29 旭化成イーマテリアルズ株式会社 ペリクル膜及びペリクル
US9057957B2 (en) 2013-06-13 2015-06-16 International Business Machines Corporation Extreme ultraviolet (EUV) radiation pellicle formation method
US9182686B2 (en) 2013-06-13 2015-11-10 Globalfoundries U.S. 2 Llc Extreme ultraviolet radiation (EUV) pellicle formation apparatus
JP6326056B2 (ja) * 2013-09-30 2018-05-16 三井化学株式会社 ペリクル膜、それを用いたペリクル、露光原版および露光装置、ならびに半導体装置の製造方法
TWI658321B (zh) * 2013-12-05 2019-05-01 荷蘭商Ａｓｍｌ荷蘭公司 用於製造一表膜的裝置與方法，以及一表膜
JP6261004B2 (ja) 2014-01-20 2018-01-17 信越化学工業株式会社 Ｅｕｖ用ペリクルとこれを用いたｅｕｖ用アセンブリーおよびその組立方法
JP6486388B2 (ja) * 2014-01-27 2019-03-20 ラクセル コーポレーション モノリシックメッシュ支持型ｅｕｖ膜
US9360749B2 (en) 2014-04-24 2016-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Pellicle structure and method for forming the same
EP3118683A4 (de) 2014-05-02 2017-11-01 Mitsui Chemicals, Inc. Pellikelrahmen, pellikel und herstellungsverfahren davon, belichtungsoriginalplatte und herstellungsverfahren dafür, belichtungsvorrichtung und halbleiterbauelementherstellungsverfahren
JP6279722B2 (ja) 2014-05-19 2018-02-14 三井化学株式会社 ペリクル膜、ペリクル、露光原版、露光装置及び半導体装置の製造方法
KR102233579B1 (ko) * 2014-08-12 2021-03-30 삼성전자주식회사 극자외선 리소그래피용 펠리클
TWI556055B (zh) * 2014-08-12 2016-11-01 Micro Lithography Inc A mask protective film module and manufacturing method thereof
US9709884B2 (en) 2014-11-26 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and manufacturing method by using the same
US10031411B2 (en) 2014-11-26 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Pellicle for EUV mask and fabrication thereof
GB2534404A (en) 2015-01-23 2016-07-27 Cnm Tech Gmbh Pellicle
EP3079013B1 (de) 2015-03-30 2018-01-24 Shin-Etsu Chemical Co., Ltd. Pellikel
JP6473652B2 (ja) * 2015-04-27 2019-02-20 三井化学株式会社 ペリクルのデマウント方法
US10036951B2 (en) * 2015-05-29 2018-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Pellicle assembly and fabrication methods thereof
NL2017093A (en) 2015-07-17 2017-01-19 Asml Netherlands Bv A method for manufacturing a membrane assembly
KR102345543B1 (ko) * 2015-08-03 2021-12-30 삼성전자주식회사 펠리클 및 이를 포함하는 포토마스크 조립체
WO2017036944A1 (en) * 2015-09-02 2017-03-09 Asml Netherlands B.V. A method for manufacturing a membrane assembly
US9950349B2 (en) 2015-09-15 2018-04-24 Internationa Business Machines Corporation Drying an extreme ultraviolet (EUV) pellicle
US9915867B2 (en) 2015-09-24 2018-03-13 International Business Machines Corporation Mechanical isolation control for an extreme ultraviolet (EUV) pellicle
US10852633B2 (en) 2015-11-03 2020-12-01 Asml Netherlands B.V. Method for manufacturing a membrane assembly
WO2017102379A1 (en) * 2015-12-14 2017-06-22 Asml Netherlands B.V. A membrane for euv lithography
US9759997B2 (en) * 2015-12-17 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Pellicle assembly and method for advanced lithography
JP6478283B2 (ja) * 2015-12-24 2019-03-06 信越化学工業株式会社 Ｅｕｖ露光用ペリクル
JP7009380B2 (ja) * 2016-04-25 2022-01-25 エーエスエムエル ネザーランズ ビー．ブイ． Ｅｕｖリソグラフィ用のメンブレン
CN107885029B (zh) * 2016-09-29 2021-01-22 台湾积体电路制造股份有限公司 薄膜组件的制造方法
JP6518801B2 (ja) 2017-03-10 2019-05-22 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用ペリクル及びその製造方法
EP3404486B1 (de) * 2017-05-15 2021-07-14 IMEC vzw Verfahren zum formen einer pellikel
CN111373324A (zh) * 2017-11-06 2020-07-03 Asml荷兰有限公司 用于降低应力的金属硅氮化物
KR101900720B1 (ko) 2017-11-10 2018-09-20 주식회사 에스앤에스텍 극자외선 리소그래피용 펠리클 및 그의 제조방법
KR102574161B1 (ko) 2018-02-06 2023-09-06 삼성전자주식회사 펠리클 및 이를 포함하는 레티클
KR20200059061A (ko) 2018-11-20 2020-05-28 삼성전자주식회사 극자외선 리소그래피용 펠리클 및 그 제조방법
JP2020098227A (ja) 2018-12-17 2020-06-25 信越化学工業株式会社 フォトリソグラフィ用ペリクル膜及びこれを備えたペリクル
JP7319059B2 (ja) * 2019-02-25 2023-08-01 エア・ウォーター株式会社 ペリクル中間体の製造方法およびペリクルの製造方法
KR102705080B1 (ko) * 2021-04-14 2024-09-11 한국전자기술연구원 극자외선 노광용 펠리클
KR102691826B1 (ko) * 2021-07-27 2024-08-05 (주)휴넷플러스 요철 구조가 형성된 펠리클의 제조방법
WO2023008532A1 (ja) 2021-07-30 2023-02-02 信越化学工業株式会社 ペリクル膜、ペリクル、ペリクル付き露光原版、露光方法、半導体の製造方法及び液晶表示板の製造方法
KR20230058781A (ko) 2021-10-25 2023-05-03 한국전자기술연구원 나노 다공성 그래핀층을 포함하는 극자외선 노광용 펠리클 및 그의 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180292B1 (en) * 1999-06-18 2001-01-30 International Business Machines Corporation Structure and manufacture of X-ray mask pellicle with washer-shaped member
US6623893B1 (en) 2001-01-26 2003-09-23 Advanced Micro Devices, Inc. Pellicle for use in EUV lithography and a method of making such a pellicle
DE50207927D1 (de) 2001-01-26 2006-10-05 Zeiss Carl Smt Ag Schmalbandiger spektralfilter und seine verwendung
US7456932B2 (en) * 2003-07-25 2008-11-25 Asml Netherlands B.V. Filter window, lithographic projection apparatus, filter window manufacturing method, device manufacturing method and device manufactured thereby
US7372623B2 (en) * 2005-03-29 2008-05-13 Asml Netherlands B.V. Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
US7723704B2 (en) * 2006-11-10 2010-05-25 Globalfoundries Inc. EUV pellicle with increased EUV light transmittance
US7666555B2 (en) * 2006-12-29 2010-02-23 Intel Corporation Pellicle, methods of fabrication and methods of use for extreme ultraviolet lithography
US8018578B2 (en) * 2007-04-19 2011-09-13 Asml Netherlands B.V. Pellicle, lithographic apparatus and device manufacturing method
EP2051139B1 (de) * 2007-10-18 2010-11-24 Shin-Etsu Chemical Co., Ltd. Pellikel und Verfahren zu dessen Herstellung
JP4934099B2 (ja) * 2008-05-22 2012-05-16 信越化学工業株式会社 ペリクルおよびペリクルの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

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CN102405440A (zh) 2012-04-04
KR20120013931A (ko) 2012-02-15
JP2010256434A (ja) 2010-11-11
EP2423747A4 (de) 2014-06-25
US20120045714A1 (en) 2012-02-23
WO2010122697A1 (ja) 2010-10-28
TW201039051A (en) 2010-11-01
US8518612B2 (en) 2013-08-27
JP5394808B2 (ja) 2014-01-22
TWI428690B (zh) 2014-03-01
KR101717615B1 (ko) 2017-03-17

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