EP2415098A2 - Procede de fabrication d'une structure a surface externe texturee pour dispositif a diode electroluminescente organique et structure a surface externe texturee - Google Patents
Procede de fabrication d'une structure a surface externe texturee pour dispositif a diode electroluminescente organique et structure a surface externe textureeInfo
- Publication number
- EP2415098A2 EP2415098A2 EP10723194A EP10723194A EP2415098A2 EP 2415098 A2 EP2415098 A2 EP 2415098A2 EP 10723194 A EP10723194 A EP 10723194A EP 10723194 A EP10723194 A EP 10723194A EP 2415098 A2 EP2415098 A2 EP 2415098A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- glass
- substrate
- etching
- layer
- textured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 102
- 239000011521 glass Substances 0.000 claims abstract description 93
- 238000005530 etching Methods 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 27
- 229910052500 inorganic mineral Inorganic materials 0.000 claims abstract description 11
- 239000011707 mineral Substances 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- 238000009499 grossing Methods 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 230000012010 growth Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004458 analytical method Methods 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 230000008030 elimination Effects 0.000 claims description 6
- 238000003379 elimination reaction Methods 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 238000010494 dissociation reaction Methods 0.000 claims description 4
- 230000005593 dissociations Effects 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- 239000002689 soil Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 95
- 238000000605 extraction Methods 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 239000000499 gel Substances 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 229910010413 TiO 2 Inorganic materials 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 8
- 239000012044 organic layer Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- -1 ROH alcohols Chemical class 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002663 nebulization Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3671—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electrodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/34—Masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y10T428/24364—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] with transparent or protective coating
Definitions
- the invention relates to a method for producing a textured external surface structure for an organic electroluminescent device, said structure comprising a mineral glass substrate whose surface is provided with protuberances and recesses for an organic light-emitting diode device and such a device. structure.
- An organic light-emitting diode device called OLED for "Organic Light Emitting Diodes" in English, comprises a material or a stack of organic electroluminescent materials, and is framed by two electrodes, one of the electrodes, usually the anode, being constituted by that associated with the glass substrate and the other electrode, the cathode being arranged on the organic materials opposite the anode.
- OLED is a device that emits light by electroluminescence using the recombination energy of holes injected from the anode and electrons injected from the cathode.
- the cathode is not transparent, the emitted photons pass through the transparent anode and the glass substrate supporting the OLED to provide light outside the device.
- An OLED usually finds its application in a display screen or more recently in a lighting device, but with different constraints.
- the light extracted from the OLED is a "white” light emitting in some or all wavelengths of the visible spectrum. It must be so in a homogeneous way.
- Lambertian emission that is to say obeying Lambert's law, being characterized by a photometric luminance equal in all directions.
- an OLED has a low light extraction efficiency: the ratio between the light that actually leaves the glass substrate and that emitted by the electroluminescent materials is relatively low, of the order of 0.25.
- the invention therefore proposes a method of manufacturing a substrate, in particular for polychromatic (white) OLED, providing both an extraction gain, a sufficiently homogeneous white light and increased reliability.
- the method for obtaining a textured external surface structure for an organic electroluminescent device comprising a mineral glass substrate whose surface is provided with growths and recesses, comprises depositing a mask of etching on the substrate surface and etching the surface of the substrate around the etching mask, and optionally removing the mask.
- One of the steps of preparing the etching mask consists in the formation of a multitude of nodules arranged randomly on the surface of the substrate and made of a material having no affinity with the glass, and the structure undergoing after the etching step, a sufficient softening of the slopes of the excrescences of submicron height and width obtained by etching until forming the textured external surface then softened.
- the network of the prior art optimizes the extraction gain around a certain wavelength but on the other hand does not promote a white light emission. On the contrary, it tends to select certain wavelengths and emits for example more in blue or red.
- the method according to the invention ensures a random external texturing to obtain an extraction gain for a wide band of wavelengths (no visible colorimetric effect), and an angular distribution of light issued almost Lambertian.
- the method according to the invention thus incorporates a softening step in order to control surface condition.
- the textured surface of the structure is defined by a roughness parameter Rdq of less than 1.5 °, preferably less than 1 °, or even less than or equal to 0.7 °, and a roughness parameter Rmax less than or equal to 100 nm, preferably greater than 20 nm, on an analysis surface of 5 ⁇ m by 5 ⁇ m, for example with 512 measurement points.
- the analysis surface is thus suitably chosen according to the roughness to be measured.
- the roughness parameters of the surface are thus preferably measured by atomic force microscopy (AFM).
- Another method for defining the softening of the outer surface is to say that the angle formed by the tangent to the normal to the substrate is greater than or equal to 30 °, and preferably at least 45 °, for the majority of the given points of this surface.
- At least 50%, even 70% and even 80%, of the textured face by etching the substrate to be covered by the active layer (s) of the OLED (to form one or several areas of light), has an outer surface with submicron texturing and sufficiently softened (typically rounded, wavy).
- N of active light transmitting region (s) of an OLED preferably at least 70% or even at least 80% of the N active area (s) comprises a softened textured surface according to the invention.
- the surface can be softened substantially entirely on the etched surface.
- the substrate can be texture by etching substantially over the entire main face in play.
- Another method than the measurement of roughness to define the softening of the external surface is to say that the angle formed by the tangent with the normal to the substrate is greater than or equal to 30 °, and preferably at least 45 °, for the majority of the given points of this surface.
- WO 02/02472 discloses the process for texturing a mineral glass substrate. This method consists of coating a plane substrate with a mask formed of metal nodules and then etching the substrate through the mask with a reactive plasma. The excrescences have heights of between 40 and 250 nm.
- WO 02/02472 An example proposed in this document WO 02/02472 is to use a glass substrate provided with a coating of indium oxide doped with tin (ITO), to deposit under vacuum a layer of silver (Ag) on the substrate by magnetron sputtering, proceed under vacuum to a dewetting of the Ag layer which consists of a heat treatment (temperature of the order of 300 0 C) to reveal only Ag nodules.
- the substrate is then subjected to reactive ion etching under a plasmagene gas such as SF 6 , and polarizing the ITO layer to a radio frequency generator. Finally, the mask fraction remaining after the etching is removed, for example by immersing the etched substrate in an acidic aqueous solution such as HNO 3 .
- ITO indium oxide doped with tin
- the term "material having no affinity with glass” means a material having a low adhesion energy with the glass, preferably less than 0.8 J / m 2 , or even less or equal to 0.4 J / m 2) .
- a metal used alone or in admixture, such as silver (adhesion energy of 0.35 J / m 2), of gold, of tin or more broadly for example an inorganic material such as AgCl, MgF 2 .
- the softening step comprises a heat treatment of the substrate at a temperature of between 0.8 ⁇ Tg and 1.25 ⁇ Tg, where Tg is the glass transition temperature of the substrate glass, so that preferably the height between the highest point and the lowest point of the heat-treated surface over a measurement length equal to the distance between two peaks of excrescences isolated from each other by the contiguous hollows, or over a measurement length equal to the distance between two bottoms of hollows insulated in them by the contiguous excrescences, is greater than or equal to 20 nm, preferably greater than or equal to 30 nm, or even greater than or equal to 80 nm.
- the temperature can thus be typically between 600 and 700 ° C. for the silicosodium-calcium glasses in particular.
- the softening stage comprises (or even consists of) a deposition by a liquid route of a preferably sol-gel smoothing layer.
- a deposition process mention may be made in particular of the methods that are suitable for a gel sol layer:
- the refractive index of the smoothing layer is substantially equal to that of glass, for example the index delta is less than 0.1 at 550 nm, for example a silica gel sol layer.
- the deposit is preferably adapted so that the softened outer surface formed by the surface of the smoothing layer is such that the height between the uppermost point and the lowest point of the softened outer surface over a measurement length equal to the distance between two neighboring peaks of protuberances isolated from each other by the adjoining depressions or over a measurement length equal to the distance between two adjacent recess bottoms isolated by the contiguous protuberances, greater than or equal to 30 nm, or even greater or equal to 80 nm.
- the glass is of index 1, 5 and the smoothing layer is silica of index 1, about 45, in particular sol-gel.
- the glass is of index 1, 7 or more and the smoothing layer is TIO 2 or ZrO 2, in particular sol-gel.
- the smoothing layer is TIO 2 or ZrO 2, in particular sol-gel.
- it comprises a liquid deposit, a smoothing layer (preferably sol-gel) on the surface of the glass, whose refractive index is greater than that of glass the substrate of at least 0.2, and preferably is between 1, 7 and 2, in particular less than or equal to the index (average) of the first electrode.
- the level of texturing is less restrictive.
- the extraction is improved thanks to the difference in index between the glass (preferably of index 1, 5, silicosodocalcique) and the layer of high index smoothing and glass texturing. By increasing the texturing of the smoothing layer, the extraction is enhanced.
- a refractive index greater than that of the glass for the smoothing layer makes it possible, in the use of the substrate in an OLED in which the organic layer and the first electrode have a refractive index which is also greater than that of the glass, to generate less reflection of the light reaching the glass substrate, and instead to promote the continuity of the path of light through the substrate.
- the first electrode is generally index (average) from 1, 7 or even beyond (1, 8 even 1, 9).
- the difference between the index (average) of the first electrode and the index of the glass may be greater than 0.2, preferably 0.4, to increase the extraction.
- the difference between the index of the smoothing layer and the index (average) of the first electrode is as low as possible, for example less than or equal to 0.1.
- the mask material is chosen from those having a different etching rate, preferably less (or even zero), than that of the glass under the chosen etching conditions. If the engraving speed of the mask material is greater than that of the glass, then it is necessary to choose a mask thickness such that there remains mask material until the end of the etching of the glass.
- obtaining the mask on the surface of the substrate comprises: the dissociation of a solution within a flame and at atmospheric pressure, the solution comprising at least one precursor of said material having no affinity with glass, a step in which said flame is directed towards said surface, to form the multitude of nodules based on said material having no affinity with the glass which constitute the etching mask, the elimination of the etching mask.
- a third configuration one can realize such nodules forming this time a negative mask.
- the second configuration is then performed to obtain the nodules, and then a thin, etch-resistant, etch-resistant, transparent dielectric coating is deposited between and on the obtained nodules, and the nodules (negative form of the mask) coated with the thin coating are then removed. form the mask from the dielectric thin coating left.
- transparent coating is meant a coating such that the light transmission of the substrate and this mask left is greater than or equal to 70%, even more preferably to 80%.
- this mask is thin, in particular less than or equal to 10 nm. It may be a layer of TiO 2 , SnO 2 , ZnO, Sn x Zn y O with x and y between 0.2 and 0.8, and preferably with a thickness of less than or equal to 10 nm.
- the etching is a dry etching, in particular a reactive ion etching under a SF 6 -like plasma gas.
- the etching is a wet etching by contact of the surface of the substrate to be etched with a wet solution, of the bath or liquid spray type.
- the nodules of Ag remaining on the growths are removed by cleaning the surface of the substrate, for example by liquid route. Mechanical elimination can also be envisaged, in particular by brushing.
- the texture glass by dewetting may have growths in the form of cylindrical shaped pads.
- the invention also relates to a structure with a textured outer surface that can be obtained by the manufacturing method of the invention above, comprising a mineral glass substrate whose surface is provided with protuberances and hollow of height. and of submicron width with a random arrangement, the outer surface of the structure being provided with excrescences and recesses of submicron height and width with a random arrangement and with rounded angles.
- the outer surface may preferably be defined by a roughness parameter Rdq of less than 1.5 ° and a roughness parameter Rmax less than or equal to 100 nm, on an analysis surface of 5 ⁇ m by 5 ⁇ m.
- the surface of the glass comprises recesses isolated between them by contiguous excrescences, the tops of the excrescences being coated by a transparent dielectric material
- the smoothing layer is a smoothing layer
- dielectric in the non-metallic sense
- electrically insulating generally having an electrical resistivity in the bulk state, as known in the literature, greater than 10 9 ⁇ .cm
- semiconducting in general solid state electrical resistivity, as known in the literature, greater than 10 "3 ⁇ .cm and less than 10 9 ⁇ .cm).
- the substrate coated with the smoothing layer may have a light transmission T L greater than or equal to 70%, or even 80%.
- the smoothing layer forming said external surface of the substrate is preferably essentially mineral and / or sol gel.
- a mineral smoothing layer rather than a polymer-type organic layer may be more easily thin and / or hold in temperature (thus meeting the constraints of certain OLED manufacturing processes), and / or be sufficiently transparent.
- the smoothing layer in particular sol-gel, is made of TiO2 oxide, ZrO2, ZnO, SnO2, SiO2.
- the TiO2 smoothing layer may be of thickness 50 to 500 nm, preferably 100 to 200 nm. The thickness is not necessarily the same in the vertices and the bottoms
- the surface of the glass may comprise protrusions insulated from each other by contiguous depressions, preferably the protuberances being at rounded angles so that the surface of the glass forms said external surface, the distance between two adjacent adjacent protuberances being between 150 nm and 1 ⁇ m. and in particular between 300 nm and 750 nm, a range corresponding to visible light.
- the surface of the glass substrate may (alternatively) have recesses isolated between them by contiguous protuberances, preferably the excrescences being rounded corners so that the surface of the glass forms said outer surface, the distance between two adjacent bottom funds being between 150 nm and 1 micron, and in particular between 300 nm and 750 nm.
- the majority or even at least 80% of the distances measured between two vertices (respectively between two depressions) of the external surface or the surface of the glass before heat treatment is between 150 nm and 1 ⁇ m, and in particular between 300 nm. and 750 nm.
- the maximum distance between two vertices (respectively between two depressions) of the outer surface or the surface of the glass before heat treatment is of the order of the longest wavelength emitted by the OLED.
- the majority or even at least 80% of the external surface, in particular the surface of the heat-treated glass, heights between the highest point and the lowest point of the surface over a measurement length equal to the distance between two neighboring peaks of excrescences isolated between them or between two bottoms of neighboring depressions isolated in them, is greater than or equal to 30 nm, or even greater than or equal to 80 nm.
- the smoothing layer in particular sol-gel, is made of silica, is on the majority, or even at least 80% of the surface, the height between the highest point and the lowest point of the outer surface of the smoothing layer (which can be heat-treated), over a measurement length equal to the distance between two neighboring peaks of growths isolated between them or between two adjacent hollow bottom walls isolated in them, is greater than or equal to 30 nm, even greater than or equal to 80 nm.
- the ratio between the width of the isolated growths (or isolated depressions) and the distance between two isolated growths (or isolated depressions) may be between 0.3 and 0.7, still more preferably between 0.4 and 0.6.
- the difference between the minimum width and the maximum width of a pad may be greater than or equal to 300 nm or even 500 nm.
- the height of isolated growths can be between 50 and 150 nm before heat treatment of the glass or under the smoothing layer.
- the majority of isolated growth peaks (or isolated depressions) can be between 90 and 150 nm.
- the majority of the insulated outgrowth heights coated (or isolated depressions) may be greater than or equal to 80 nm.
- the amplitude may be greater than or equal to 80 nm.
- the structure comprises a thin layer electrode (s) surface conforming to the external textured surface.
- This first electrode in the form of thin layer (s) deposited (s) may be substantially consistent with the underlying external surface softening. These layers are deposited for example by deposition (s) in the vapor phase, in particular by magnetron sputtering or by evaporation.
- the first electrode is generally index (average) from 1, 7 or even beyond (1, 8 even 1, 9).
- the organic layer or layers subsequently deposited on the electrode are generally index (average) from 1, 8 or even beyond (1, 9 even more).
- the invention finally relates to an organic light-emitting diode (OLED) device incorporating the structure defined above, the textured external surface of the substrate being arranged on the organic electroluminescent layer (s) side (OLED system), c i.e., interior to the device, the textured outer surface structure being under a first electrode underlying the organic electroluminescent layer (s).
- OLED organic light-emitting diode
- the OLED can form a lighting panel, or backlight (substantially white and / or uniform) including surface (full) electrode or equal to 1x1 cm 2 , or even up to 5x5 cm 2 , even 10x10 cm 2 and beyond.
- the OLED can be designed to form a single illuminating pad (with a single electrode surface) in polychromatic light (substantially white) or a multitude of illuminating patches (with multiple electrode surfaces) in polychromatic light (substantially white ), each illuminating pad having a (full) electrode surface greater than or equal to 1x1 cm 2 , or even 5x5 cm 2 , 10x10 cm 2 and beyond.
- a non-pixelated electrode differs from a display screen electrode ("LCD”, etc.) formed of three juxtaposed pixels, generally very small dimensions, and each emitting a given radiation almost monochromatic (typically red, green or blue).
- LCD display screen electrode
- the OLED system may be designed to emit a polychromatic radiation defined at 0 ° by coordinates (x1, y1) in the CIE XYZ 1931 colorimetric diagram, thus given coordinates for radiation to normal.
- the OLED may further include an upper electrode above said OLED system.
- the OLED can be emission from the bottom and possibly also from the top, depending on whether the upper electrode is reflective or respectively semi-reflective, or even transparent (in particular TL comparable to the anode, typically from 60% and preferably greater than or equal to 80%).
- the OLED system can be adapted to emit (substantially) white light, as close as possible to the coordinates (0.33, 0.33) or coordinates (0.45, 0.41), especially at 0 °.
- substantially white light several methods are possible: mixture of compounds (green red emission, blue) in a single layer, stack on the face of the electrodes of three organic structures (green red emission, blue) or two organic structures ( yellow and blue).
- the OLED can be adapted to output (substantially) white light, as close as possible to coordinates (0.33, 0.33), or coordinates (0.45, 0.41), especially at 0 ° .
- the device can be part of a multiple glazing, including a vacuum glazing or with air knife or other gas.
- the device can also be monolithic, include a monolithic glazing to gain compactness and / or lightness.
- the OLED may be glued or preferably laminated with another flat substrate said cover, preferably transparent such as a glass, using a lamination interlayer, especially extra-clear.
- the invention also relates to the various applications that can be found in these OLEDs, forming one or more transparent and / or reflecting luminous surfaces (mirror function) arranged both outside and inside.
- the device can form (alternative or cumulative choice) an illuminating, decorative, architectural system, etc.), a signaling display panel - for example of the type drawing, logo, alphanumeric signaling, including an emergency exit sign.
- the OLED can be arranged to produce a uniform polychromatic light, especially for uniform illumination, or to produce different light areas of the same intensity or distinct intensity.
- an illuminating window can in particular be produced. Improved lighting of the room is not achieved at the expense of light transmission. By also limiting the light reflection, especially on the outside of the illuminating window, this also makes it possible to control the level of reflection, for example to comply with the anti-glare standards in force for the facades of buildings.
- the device in particular transparent by part (s) or entirely, can be: - intended for the building, such as an external luminous glazing, an internal light partition or a (part of) light-glass door including sliding, intended for a transport vehicle, such as a bright roof, a (part of) side light window, an internal light partition of a land, water or air vehicle (car, truck train, airplane, boat, etc.), - intended street or professional furniture such as a bus shelter panel, a wall of a display, a jewelery display or a showcase, a wall of a greenhouse, an illuminated slab, intended for interior furnishing , a shelf or furniture element, a cabinet front, an illuminating slab, a ceiling lamp, a refrigerator lighting shelf, an aquarium wall, intended for the backlighting of electronic equipment, particularly for visualization or display screen age, possibly double screen, like a television or computer screen, a touch screen.
- a transport vehicle such as a bright roof, a (part of) side light window, an internal light partition of a land, water
- OLEDs are generally dissociated into two major families depending on the organic material used.
- SM-OLED Small Molecule Organic Light Emitting Diodes
- HIL hole injection layers
- HTL hole transport layer
- ETL electron transport layer
- Examples of organic electroluminescent stacks are for example described in the document entitled “oven wavelength white organic light emitting diodes using 4, 4'-bis- [carbazoyl- (9)] - stilbene as a deep blue emissive layer” of CH. Jeong et al., Published in Organics Electronics 8 (2007) pages 683-689.
- organic electroluminescent layers are polymers, it is called PLED ("Polymer Light Emitting Diodes" in English).
- Figure 1 is a schematic sectional view of an OLED comprising a substrate according to the invention
- Figure 2 is a sectional view of the substrate of the invention
- FIG. 3a represents the masking and etching steps of the method of the invention according to a first embodiment
- FIG. 4 represents the steps of the masking and etching process of the invention according to a second embodiment
- FIG. 5 represents the first steps of the method according to two additional embodiments
- Figure 6 shows a SEM image of the textured surface of the glass by some steps of Figure 5;
- FIG. 7 shows an exemplary step of softening the etched substrate by heat treatment
- FIG. 1 illustrates an organic electroluminescent device 1 which comprises, in a known manner, successively a mineral glass substrate 2, a first transparent electrode 3, a stack 4 of organic electroluminescent layers and a second electrode 5.
- the glass substrate 2 serves as a support for other elements of the OLED. It is made of soda-lime-silica glass, optionally clear or extra-clear, having a thickness of 2.1 mm, for example.
- the first electrode 3 comprises a transparent electroconductive coating such as based on indium oxide doped with tin (ITO) or a stack of silver.
- ITO indium oxide doped with tin
- the electrode stack comprises, for example: a possible bottom layer (and / or) wet etch stop layer, a possible underlayer, zinc-based mixed oxide layer and optionally doped tin layer; a mixed indium tin oxide (ITO) layer or a mixed indium zinc oxide (IZO) layer, a metal oxide-based contact layer selected from doped ZnO x or no, Sn y Zn z O x , ITO or IZO, a metallic functional layer, for example silver, with intrinsic property of electrical conductivity, a possible thin layer of overblocking directly on the functional layer, the thin blocking layer comprising a metal layer less than or equal to 5 nm thick and / or a layer with a thickness of less than or equal to 10 nm, which is based on stoichiometric metal oxide, stoichiometric metal oxynitride or stoichiometric metal nitride (and eventually a thin layer of under-blocking directly under the functional layer), a
- Electrode stack If 3 N 4 / ZnO: Al / Ag / Ti or NiCr / ZnO: Al / ITO, respective thicknesses, 25nm for Si 3 N 4 , 5 at 20 nm for ZnO: Al, 5 to 15 nm for silver, 0.5 to 2 nm for Ti or NiCr, 5 to 20 nm, for ZnO: Al, 5 to 20 nm for NTO.
- the functional layer the thin layer of overblocking
- the protective layer with water and / or oxygen.
- the final layer of the electrode remains the overlay.
- the stack of organic layers 4 comprises a central electroluminescent layer interposed between an electron transport layer and a hole transport layer, themselves interposed between an electron injection layer and a hole injection layer. .
- the second electrode 5, or upper electrode is made of electrically conductive material and preferably (semi) reflective material, in particular a metallic material of the silver or aluminum type.
- the substrate 2 of the OLED exhibits, according to the invention (FIG. 2), a textured external surface intended to be in contact with the lower electrode 3 and formed of an alternation of excrescences. 23 and recesses 24 distributed randomly.
- the inventors have demonstrated that it is essential that the external surface (surface of the glass itself or of a smoothing layer of the textured glass) is sufficiently softened, typically with rounded angles.
- the external surface is defined by a roughness parameter Rdq of less than 1.5 ° and a roughness parameter Rmax less than or equal to 100 nm, on an analysis surface of 5 ⁇ m by 5 ⁇ m.
- Angle measurements can be made using an atomic force microscope. In parallel, the angle ⁇ formed by the tangent in a majority of points of the pattern with the normal to the substrate may be greater than or equal to 30 °, and preferably at least 45 °. Angle measurements can be made by microscopy.
- the textured outer surface can also be defined by a roughness parameter Rmax greater than or equal to 20 nm on an analysis surface of 5 ⁇ m by 5 ⁇ m, by AFM.
- the method of the invention ensures to obtain such a softened outer surface.
- Texturing is first performed on the bare glass substrate, thus giving outgrowths 23 'and hollows 24' distributed randomly.
- the method consists of: developing an etching mask on the surface 21 of the glass substrate, etching the substrate around the mask (see FIGS. 3a, 4 and 5), and, to form the softened external surface, subjecting a heat treatment to the etched substrate according to a first embodiment of the invention (see FIG. 7), or according to a second embodiment (see FIG. 9), depositing a transparent smoothing layer on the surface of the etched substrate.
- FIG. 3a illustrates a first exemplary embodiment of obtaining the mask and the etching.
- a metal material 6 such as the silver to form the mask is deposited by covering the entire surface 21 of the substrate (or at least a predetermined zone).
- step b) dewetting of the layer by heating in an oven at a temperature between 200 and 400 0 C to obtain metal nodules 60 distributed randomly.
- step c) the substrate is etched, advantageously by the dry route, assisted by plasma.
- This etching technique consists of arranging two electrodes on the one hand, facing Ag nodules, and on the other hand, facing the opposite face 20 of the glass substrate, in a low pressure atmosphere, typically between 50 mTorr and
- a plasma gas such as SF 6 .
- FIG. 3b shows a scanning electron microscope view at an angle of 15 ° with a magnification of 50000 of the textured surface of a substrate made according to the technique of FIG. 3a, and by means of a dry etching.
- the surface of such a texture glass forms a plurality of excrescences in the form of pads with polygonal section (more or less cylindrical), of variable width.
- the thickness of the Ag mask is 10 nm.
- the dewetting temperature is 300 ° C. and the dewetting time is 10 minutes.
- the etching obtained is anisotropic.
- the dimension between two neighboring growth peaks (pads) is mainly around 300 nm, at plus or minus 150 nm. The height of the pads is between 80 and 100 nm.
- FIG. 3c shows a scanning electron microscope view at an angle of 15 ° with a magnification of 50000 of the textured surface of a glass made according to the technique of FIG. 3 and by means of a dry etching.
- the thickness of the Ag mask is 20 nm.
- the dewetting temperature is 300 ° C. and the dewetting time is 15 minutes.
- the etching obtained is anisotropic.
- the dimension between two neighboring growth peaks (pads) is mainly around 600 nm at plus or minus 30On nm. The height of the pads is about 100 nm.
- FIG. 4 represents the steps of the masking and etching process of the invention according to a second embodiment.
- the steps c) and d) etching and cleaning are identical to those of the example of Figure 3a, only steps a) and b) for obtaining the mask are distinct.
- the nodules of Ag forming the mask are in this variant obtained directly by a CVD technique by combustion ("CVD combustion" in English) (step a '). It is a matter of spraying on the surface 21 of the substrate, in the form of a nebulization and at atmospheric pressure, a solution comprising at least one precursor of a material to constitute the mask, while directing a flame towards said surface of so that the material dissociates from the solution and is deposited in a random manner in the form of a plurality of nodules 60.
- the discrete mask of nodules resulting from the dissociation of the precursor of the material within the flame may have several zones with patterns distinct in size (width and height) and / or orientation and / or distance.
- the solution is an aqueous solution of silver nitrate with a concentration of 0.5 mol / l.
- the flow rate of N 2 of nebulization is 1.7 slm and the flow rate of N 2 dilution is 13.6 slm.
- the distance of the flame to the substrate is of the order of 10 mm with a relative movement between the flame and the substrate, such as a dozen passes.
- the temperature of the substrate subjected to the flame is of the order of 80 ° C.
- the nodules 60 obtained are of nanometric size with distances between two vertices which are those expected for the application targeted by the invention.
- the manufacturing parameters are adjusted according to the aspect ratio of the desired patterns, and the desired density of the patterns.
- FIG. 5 represents the masking and etching steps of the method according to two additional embodiments.
- This variant takes steps a) and b) of the variant of FIG. 3a (or a ') of FIG. 4) and proceeds with the following additional steps before the etching: a thin layer 7, with a thickness of 2 to 20 nm, of transparent dielectric material, for example TiO 2 , is deposited on the substrate provided with Ag nodules (step b ') by vacuum magnetron sputtering forming a negative of engraving mask;
- step d) of FIGS. 3a and 4 The elimination of the silver which does not present of adhesion properties with glass also leads locally to take the thin layer 7 of TiO 2 which covers the nodules.
- This step referenced b ") in FIG. 5 generates an etching mask on the surface of the TiO 2 substrate and with random patterns.Once the etching mask is obtained, the next step of the etching process can advantageously take place for a substrate obtained with such a mask, either dry (step c of Figures 3a and 4), or wet (step c ').
- the wet etching (step c ') consists in applying for example a solution of hydrofluoric acid by dipping in a bath or by spraying. This etching gives rise to isotropic cavities of the spherical type (the walls of the hollows being vertical or perpendicular to the plane of the glass), unlike a dry etching forming anisotropic cavities (walls curved in all directions).
- FIG. 6 shows a scanning electron microscope view at a magnification of 50000 of a textured glass made according to the technique of FIG. 5 and by means of dry etching.
- the dimension between two neighboring depressions is mainly around 400 nm to plus or minus 200 nm.
- the mask material being made of TiC> 2 , therefore transparent and dielectric, it is not necessarily useful to remove it.
- the etched substrates have nano-texturations which, however, do not correspond to the characteristics desired to form an OLED support substrate, in particular as regards the slope that the protrusions have with respect to the plane of the substrate, this slope not being too acute.
- the invention proposes, in addition to the steps described above for forming a textured outer surface, an additional step which consists, as already indicated briefly, according to a first embodiment in a heat treatment of the textured glass (FIG. 7) forming excrescences. 23 and softened depressions 24, or according to a second embodiment in a liquid deposit of a transparent smoothing layer 25 of refractive index distinct or not from that of the glass, preferably higher (FIG. 9) forming excrescences 23 and hollows 24 softened.
- the first embodiment by heat treatment consists in subjecting the etched substrate in a furnace to heating (step e) at a temperature of between 600 and 700 ° C. for a duration of between 2 and 30 minutes.
- the softening of the substrate causes a softening of the textured surface by softening the slopes of the growths.
- the duration of the heat treatment is a function of the desired angle between the tangent at any point of an outgrowth with the normal to the substrate, an angle greater than or equal to 30 °.
- Figure 8 shows a scanning electron microscope view at a magnification of 50000 of the textured surface and heat treated. The initial surface state before annealing being similar to that shown in Figure 3b).
- a second embodiment consists in depositing the thin layer 25 by a liquid route (step e 'of FIG. 9).
- This liquid method makes it possible to deposit a thickness always slightly greater in the bottom of the cavities than on the top of the growths, ensuring a modeling of the slopes in accordance with the desired expectation. On the contrary, a physical deposit would not be appropriate because it would follow perfectly the profile of the substrate and thus bring no change in the slope of the growths.
- the method of forming a sol-gel layer has the advantage of being carried out at room temperature.
- the starting point may be a homogeneous solution of molecular precursors, which is transformed into a solid by chemical reaction of inorganic polymerization at room temperature.
- the solution of more or less polymerized precursors is called sol, and turns into a gel during aging.
- the thickness of the layer that is used for softening is directly related to the dry extract of the formulation.
- the dry extract is defined as being the mass% of material in the initial formulation which is found in the layer after deposition.
- the total mass of alkoxide but the equivalent oxide mass are not taken into account because the alkoxide hydrolyses to M (OH) n then MOx condense, releasing ROH alcohols.
- the mass is equivalent to SiO 2 (one replaces mole to mole). It is necessary to soften while maintaining sufficient ripples for the optics, preferably a minimum to maximum difference in altitude, greater than or equal to 50 nm, or even 80 nm over a distance between two vertices of coated neighboring studs.
- a silica layer is chosen which is 40 nm in the face to fill the holes with at least 80 nm of silica. where a solids content of about 1.5%.
- the initial composition is based on a silicon alkoxide, tetraethoxysilane (Si (OC 2 H 5 ) 4 and called "TEOS”) which is used in water acidified with hydrochloric acid to obtain a pH of 2.5.
- TEOS tetraethoxysilane
- composition of the smoothing layer consists of:
- the various mixtures are deposited by spin-coating at 1000 rpm on the structured glass and then dried for 30 min at 120 ° C.
- TiO 2 layers made from Ti (OBu) 4 and acetylacetone which As a complexing agent, the equivalent weight of TiO 2 and the mass of acetylacetone, which remains in the layer if no heat treatment is carried out at high temperature, is used.
- the smoothing layer is based on an alkoxide of formula M (OR) n, in particular titanium alkoxide, a complexing agent, acetylacetone, and a solvent, isopropanol.
- the preparation of the composition of the smoothing layer consists in: adding 0.5 ml of acetylacetone to 4.7 ml of isopropanol; add slowly, with stirring, 1.65 ml of titanium butoxide; stir the mixture for two hours at room temperature, dilute the mixture with 0.88 ml of isopropanol. This mixture has a solids content of 8%.
- reaction After reaction, it is deposited by spin-coating at 1000 rpm on the structured glass and then dried for 30 min at 80 ° C.
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Abstract
Description
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FR0952148A FR2944147B1 (fr) | 2009-04-02 | 2009-04-02 | Procede de fabrication d'une structure a surface externe texturee pour dispositif a diode electroluminescente organique et struture a surface externe texturee |
PCT/FR2010/050640 WO2010112788A2 (fr) | 2009-04-02 | 2010-04-02 | Procede de fabrication d'une structure a surface externe texturee pour dispositif a diode electroluminescente organique et structure a surface externe texturee |
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US (1) | US20120112224A1 (fr) |
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KR101517020B1 (ko) * | 2008-05-15 | 2015-05-04 | 삼성디스플레이 주식회사 | 유기전계발광표시장치의 제조장치 및 제조방법 |
US10581020B2 (en) | 2011-02-08 | 2020-03-03 | Vitro Flat Glass Llc | Light extracting substrate for organic light emitting diode |
KR20130084848A (ko) * | 2012-01-18 | 2013-07-26 | 한국전자통신연구원 | 유기 발광 소자 및 유기 발광 소자 제조 방법 |
KR101339440B1 (ko) * | 2012-01-26 | 2013-12-10 | 한국전자통신연구원 | 유기 발광 소자 및 유기 발광 소자 제조 방법 |
FR2986909B1 (fr) * | 2012-02-10 | 2014-11-21 | Saint Gobain | Electrode supportee transparente pour oled |
JPWO2013132870A1 (ja) * | 2012-03-08 | 2015-07-30 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子の製造方法、及び、有機エレクトロルミネッセンス素子 |
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2009
- 2009-04-02 FR FR0952148A patent/FR2944147B1/fr not_active Expired - Fee Related
-
2010
- 2010-04-02 KR KR1020117026132A patent/KR20120023632A/ko not_active Application Discontinuation
- 2010-04-02 CN CN201090000867.2U patent/CN203013800U/zh not_active Expired - Fee Related
- 2010-04-02 JP JP2012502756A patent/JP2012523073A/ja active Pending
- 2010-04-02 EP EP10723194A patent/EP2415098A2/fr not_active Withdrawn
- 2010-04-02 US US13/260,981 patent/US20120112224A1/en not_active Abandoned
- 2010-04-02 WO PCT/FR2010/050640 patent/WO2010112788A2/fr active Application Filing
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FR2944147B1 (fr) | 2011-09-23 |
CN203013800U (zh) | 2013-06-19 |
WO2010112788A3 (fr) | 2011-01-06 |
FR2944147A1 (fr) | 2010-10-08 |
US20120112224A1 (en) | 2012-05-10 |
KR20120023632A (ko) | 2012-03-13 |
JP2012523073A (ja) | 2012-09-27 |
WO2010112788A2 (fr) | 2010-10-07 |
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