EP2381497B1 - Thin film temperature-difference cell and fabricating method thereof - Google Patents

Thin film temperature-difference cell and fabricating method thereof Download PDF

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Publication number
EP2381497B1
EP2381497B1 EP09838672.5A EP09838672A EP2381497B1 EP 2381497 B1 EP2381497 B1 EP 2381497B1 EP 09838672 A EP09838672 A EP 09838672A EP 2381497 B1 EP2381497 B1 EP 2381497B1
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Prior art keywords
thin
film layer
film
electric
substrate
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German (de)
English (en)
French (fr)
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EP2381497A4 (en
EP2381497A1 (en
Inventor
Ping Fan
Dongping Zhang
Zhuanghao Zheng
Guangxing Liang
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Shenzhen Caihuang Enterprise & Development Co Lt
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Shenzhen Caihuang Enterprise & Development Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

Definitions

  • thermo-electric technology relates to thermo-electric technology, and more particularly to a thin-film temperature-difference cell and fabrication method thereof.
  • the temperature-difference cell is a kind of generator made on the basis of Seebeck Effect, the heat energy is transformed into electric energy.
  • the working principle of temperature-difference cell is that connecting one end of two different metals or two different types of thermo-electric conversion materials P-type and N-type semiconductors, placing this end in high temperature condition, and placing the other end in low temperature condition. Compared with the other end, the end in high temperature condition has better thermal activation and higher density of electrons and holes, the electrons and holes spread to the end in low temperature condition, thus an electric potential difference is formed in the end in low temperature condition.
  • the temperature-difference cell is a kind of clean, noiseless energy without discharging any hazardous substance, having high reliability and long useful time, and supplying long, safe, continuous and stable electricity output.
  • the temperature-difference cell is made by cutting and welding the thermo-electric materials.
  • thermo-electric unit chip is separately manufactured, in the fabrication of micro thin-film temperature-difference cell, the conducting layer connecting P-type and N-type thermo-electric units can be manufactured on condition that the chip is not stripped from the deposited thermo-electric units.
  • This method has complicated procedures, and the thin-film of the temperature-difference cell is merely limited to single thin-film, so the performance is limited.
  • JP2008205181 discloses a thermoelectric module made with alternating thin films of N and P type thermoelectric material.
  • JP05327033 discloses a thermoelectric power conversion device comprising semiconductor layers formed on different sides of an insulating substrate.
  • this invention provides a thin-film temperature-difference cell and fabrication method thereof, improving the performance and simplifying the fabrication processes.
  • a method for fabricating a thin-film thermo-electric generator comprising depositing multilayer films on the two sides of the substrate, and further comprises steps as follows:selecting a substrate and sheltering one side of said substrate;depositing a P-type thermo-electric thin-film layer on one side of the substrate;sheltering said substrate and sheltering one end and all sides of the deposited thin-film layer, and depositing an insulating thin-film layer on said P-type thermo-electric thin-film layer;sheltering said substrate and the sides of the deposited thin-film layer, depositing a N-type thermo-electric thin-film layer on the deposited insulating thin-film layer to form a three-layer film, wherein the P-type thermo-electric thin-film layer and N-type thermo-electric thin-film layer of said three-layer film are connected together at said sheltered end of the substrate to form a PN junction;repeating the steps described above to form multiple PN junctions;depositing an insulating thin-film layer between every two adjacent
  • thermo-electric thin-film layer For the thin-film temperature-difference cell and fabrication method of this invention, a P-type thermo-electric thin-film layer, an insulating thin-film layer and a N-type thermo-electric thin-film layer are deposited on a substrate to form a PN junction with three films, multiple three-layer PN junctions in series are available, an insulating thin-film layer is provided between the PN junctions of each of the three-layer PN junctions in series for separating, and electrodes are extracted from the upper side of the substrate and the outermost thin-film layer of the last three-layer thin-film PN junctions, respectively.
  • the present invention applies the deposition of P-type thermo-electric thin-film layer, an insulating thin-film layer and a N-type thermo-electric thin-film layer to form a three-layer PN junction, thus a thermocouple is formed, during the deposition of the insulating thin-film layer, intentionally sheltering the substrate and one end of the deposited thin-film layer enable the P-type or N-type materials to be deposited on the substrate and one end of the deposited thin-film layer directly, to form a connection end of PN junction or a serial connection end between two PN junctions, the special connection with the P-type and N-type materials is not necessary, simplifying the fabrication processes of the thin-film temperature-difference cell, owning to the characteristics of the thin-film thermo-electric materials and serial connection structure of multiple three-layer PN junctions, the performance of the thin-film temperature-difference cell is greatly improved.
  • the present invention provides a thin-film temperature-difference cell and fabrication method thereof. To make the technical solutions of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and embodiments as follows.
  • FIG. 1a- FIG. 1i are the schematic diagrams of the fabrication process of a first embodiment
  • FIG. 1i is the schematic diagrams of the end of the thin-film temperature-difference cell.
  • the thin-film temperature-difference cell comprises an insulating substrate 101, an extractive electrode 102, a P-type thermo-electric thin-film layer 103, an insulating thin-film layer 104, a N-type thermo-electric thin-film layer 105, an insulating thin-film layer 106, a P-type thermo-electric thin-film layer 107, an insulating thin-film layer 108, a N-type thermo-electric thin-film layer 109, and an extractive electrode 110.
  • FIG. 1a shows a preset electrode 102 on a surface of the insulating substrate 101.
  • FIG. 1b shows a P-type thermo-electric thin-film layer 103 deposited on the side of the substrate on which the electrode is preset.
  • FIG. 1c shows an insulating thin-film layer 104 deposited on the P-type thermo-electric thin-film layer 103.
  • FIG. 1d shows a N-type thermo-electric thin-film layer 105 deposited on the insulating thin-film layer 104.
  • FIG. 1e shows an insulating thin-film layer 106 deposited on the N-type thermo-electric thin-film layer 105.
  • FIG. If shows a P-type thermo-electric thin-film layer 107 deposited on the insulating thin-film layer 106.
  • FIG. 1g shows an insulating thin-film layer 108 deposited on the P-type thermo-electric thin-film layer 107.
  • FIG. 1h shows a N-type thermo-electric thin-film layer 109 deposited on the insulating thin-film layer 108.
  • FIG. 1i shows an insulating thin-film layer 116, a P-type thermo-electric thin-film layer 117, an insulating thin-film layer 118 and a N-type thermo-electric thin-film layer 119 formed by repeating depositing steps 106-109.
  • thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are connected together at one end of the insulating thin-film layer to form a three-layer PN junction.
  • An insulating layer is deposited between two adjacent PN junctions for separating, and the two adjacent PN junctions are connected together at one end of the insulating layer, in order to form PN junctions in series.
  • Another electrode 110 is extracted from the N-type thermo-electric thin-film layer 119 of the last three-layer PN junction.
  • the general materials of the thin-film temperature-difference cell are metal and semiconductor.
  • the P-type and N-type thermo-electric materials may be two different metals or two different semiconductors, that a thermocouple may be formed by depositing two different metal films or two different semiconductors. During the fabrication process, the depositing of N-type thermo-electric thin-film layer can be carried out before or after the depositing of P-type thermo-electric thin-film layer.
  • thermo-electric thin-film layers Several methods can be applied to make the P-type and N-type thermo-electric thin-film layers, such as vacuum evaporation, Molecule Beam Epitaxy (MBE), magnetron sputtering, ion beam sputtering deposition, Laser Deposition, electrochemical atomic layer epitaxy (ECALE), metal-organic chemical vapor deposition (MOCVD), and successive ionic layer adsorption and reaction (SILAR).
  • MBE Molecule Beam Epitaxy
  • ECALE electrochemical atomic layer epitaxy
  • MOCVD metal-organic chemical vapor deposition
  • SILAR successive ionic layer adsorption and reaction
  • the depositing of N-type thermo-electric thin-film layer can be carried out before or after the depositing of P-type thermo-electric thin-film layer.
  • the depositing of N-type thermo-electric thin-film layer can be carried out before or after the depositing of P-type thermo-electric thin-film layer.
  • the thin-film temperature-difference cell can be made by using the insulating substrate as well as the substrate of P-type thermo-electric material (or metal) or N-type thermo-electric material (or metal). If the substrate of P-type thermo-electric material is applied, the cross-section diagram of the thin-film temperature-difference cell is shown in Fig. 2h .
  • the thin-film temperature-difference cell comprises a P-type thermo-electric material substrate 201, an insulating thin-film layer 202, a N-type thermo-electric thin-film layer 203, an insulating thin-film layer 204, a P-type thermo-electric thin-film layer 205, an insulating thin-film layer 206, a N-type thermo-electric thin-film layer 207, an extractive electrode 208 and an extractive electrode 209.
  • FIG. 2a shows the insulating thin-film layer 202 deposited on the P-type thermo-electric material substrate 201.
  • FIG. 2b shows the N-type thermo-electric thin-film layer 203 deposited on the insulating thin-film layer 202.
  • FIG. 2c shows the insulating thin-film layer 204 deposited on the N-type thermo-electric thin-film layer 203.
  • FIG. 2d shows the P-type thermo-electric thin-film layer 205 deposited on the insulating thin-film layer 204.
  • FIG. 2e shows the insulating thin-film layer 206 deposited on the P-type thermo-electric thin-film layer 205.
  • FIG. 2f shows the N-type thermo-electric thin-film layer 207 deposited on the insulating thin-film layer 206.
  • FIG. 2g shows an insulating thin-film layer 214, a P-type thermo-electric thin-film layer 215, an insulating thin-film layer 216 and a N-type thermo-electric thin-film layer 217 formed by repeating steps 204-207 for depositing.
  • a connection of a PN junction with deposited PN junctions in series is formed.
  • Multiple connections of three-layer PN junctions in series may be applied, and an insulating thin-film layer is provided between every the PN junction for separating.
  • the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer of the three films are connected together at one end of the insulating thin-film layer to form a PN junction.
  • An insulating thin-film layer is provided between two adjacent PN junctions, and the two adjacent three-layer PN junctions separated by the insulating thin-film layer are connected together at one end of the insulating thin-film layer, in order to form PN junctions in series.
  • An electrode 208 is extracted from the N-type thermo-electric thin-film layer 217 of the last three-layer PN junction; an electrode 209 is extracted from the side which is not deposited of the P-type thermo-electric material substrate 201.
  • the main structure of the thin-film temperature-difference cell using the P-type thermo-electric material as substrate as shown in Fig. 2h is formed.
  • the N-type thermo-electric material is applied as the substrate, the N-type thermo-electric thin-film layer and the P-type thermo-electric thin-film layer shall be exchanged in the fabrication process.
  • the embodiment of the present invention is based on the structure of thin-film temperature-difference cell applying P-type thermo-electric material as the substrate as shown in FIG. 2g , depositing multiple three-layer PN junctions in series on the other side of the P-type thermo-electric substrate 201, such that an insulating thin-film layer is provided between every three-layer PN junction for separating, to form a thin-film temperature-difference cell provided in the third embodiment. As shown in FIG.
  • the thin-film temperature-difference cell in this embodiment comprises a structure basis 301 of thin-film temperature-difference cell using P-type thermo-electric material as the substrate, an insulating thin-film layer 302, a N-type thermo-electric thin-film layer 303, an insulating thin-film layer 304, a P-type thermo-electric thin-film layer 305 , an extractive electrode 306 and an extractive electrode 307.
  • FIG. 3a shows structure basis 301 of thin-film temperature-difference cell using P-type thermo-electric material as the substrate in the FIG. 2g .
  • FIG. 3b shows an insulating thin-film layer 302 deposited on the other side of structure basis 301 of thin-film temperature-difference cell using P-type thermo-electric material as the substrate in the second embodiment of this invention.
  • FIG. 3c shows a N-type thermo-electric thin-film layer 303 deposited on the insulating thin-film layer 302.
  • FIG. 3d shows the insulating thin-film layer 304 deposited on the N-type thermo-electric thin-film layer 303.
  • FIG. 3e shows the P-type thermo-electric thin-film layer 305 deposited on the insulating thin-film layer 304.
  • FIG. 3f shows an insulating thin-film layer 312, a P-type thermo-electric thin-film layer 313, an insulating thin-film layer 314 and a N-type thermo-electric thin-film layer 315 formed by repeating steps 302-305 for depositing, thus a PN junction may connect in series with the deposited PN junctions. Multiple connections of three-layer PN junctions in series are available; an insulating thin-film is applied between every PN junction for separating. The three-layer P-type thermo-electric thin-film layer and N-type thermo-electric thin-film layer are connected together at one end of the insulating thin-film layer, to form a PN junction.
  • An insulating thin-film layer is applied between every two adjacent PN junctions for separating, and the PN junctions separated by the insulating thin-film layer are connected together at one end of the insulating thin-film layer, to form connections of PN junctions in series.
  • An electrode 306 and an electrode 307 is extracted from the N-type thermo-electric thin-film layer of the last three-layer PN junction on the two sides of the P-type thermo-electric thin-film substrate respectively to form the main structure of the thin-film temperature-difference cell with both sides of P-type thermo-electric thin-film substrate deposited, as shown in FIG. 3g .
  • the N-type thermo-electric material is applied as the substrate, the N-type thermo-electric thin-film layer and the P-type thermo-electric thin-film layer shall be exchanged in the fabrication process.
  • the thin-film temperature-difference cell in this embodiment comprises a structure basis 501 of the thin-film temperature-difference cell structure as shown in FIG. 4g , an insulating thin-film layer 502, a N-type thermo-electric thin-film layer 503, an insulating thin-film layer 504, a P-type thermo-electric thin-film layer 505 , an extractive electrode 506 and an extractive electrode 507.
  • FIG. 5a shows the structure basis 501 of the thin-film temperature-difference cell structure as shown in FIG. 4g ;
  • FIG. 5b shows an insulating thin-film layer 502 deposited on the one side of the structure basis 501 of the thin-film temperature-difference cell structure as shown in FIG. 4 with P-type thermo-electric thin-film layer deposited on the other side thereof ;
  • FIG. 5d shows the insulating thin-film layer 504 deposited on the N-type thermo-electric thin-film layer 503;
  • FIG. 5e shows the P-type thermo-electric thin-film layer 505 deposited on the insulating thin-film layer 504;
  • a PN junction may connect with the deposited PN junctions in series.
  • Multiple connections of three-layer PN junctions in series are available; an insulating thin-film is applied between every PN junction.
  • the P-type thermo-electric thin-film layer and N-type thermo-electric thin-film layer of the three films are connected together at one end of the insulating thin-film layer, to form a PN junction.
  • An insulating thin-film layer is applied between every two adjacent PN junctions, and the PN junctions separated by the insulating thin-film layer are connected together at one end of the insulating thin-film layer, to form connections of PN junctions in series.
  • An electrode 506 and an electrode 507 are extracted from the N-type thermo-electric thin-film layer of last three-layer PN junction on the two sides of the insulating substrate, respectively.
  • the main structure of the thin-film temperature-difference cell with the P-type thermo-electric material substrate deposited on both sides as shown in Fig. 5g is formed.
  • the depositing of N-type thermo-electric thin-film layer can be carried out before or after the depositing of P-type thermo-electric thin-film layer.
  • the substrate can be a regular rectangle or a regular square or in any irregular shapes.
  • the common thickness range of the substrate is from 0.1mm to 100mm.
  • the substrate with other thickness may also be suitable.
  • the substrate can be an insulating substrate, a P-type thermo-electric thin-film or a N-type thermo-electric thin-film substrate, or any other material substrate.
  • the P-type or N-type thermo-electric thin-film materials of each PN junction in the thin-film temperature-difference cell can be the same or different respectively, that is, in the entire thin-film temperature-difference cell, some PN junctions can be made of two different metal thin-film layer and insulating layer, and some can be made of a pair of P-type and N-type thermo-electric thin-film layers and insulating layer. During the deposition of insulating layers, one end of them is deliberately sheltered.
  • the ion beam sputtering deposition and magnetron sputtering in the first embodiment can also be applied in the second, third, fourth and fifth embodiment, and some other methods such as vacuum evaporation, Molecule Beam Epitaxy (MBE), Laser Deposition, electrochemical atomic layer epitaxy (ECALE), metal-organic chemical vapor deposition (MOCVD), and successive ionic layer adsorption and reaction (SILAR) can be applied. Then the thin-film temperature-difference cell is made by scribing, racking, packaging and related subsequent procedures.
  • MBE Molecule Beam Epitaxy
  • ECALE electrochemical atomic layer epitaxy
  • MOCVD metal-organic chemical vapor deposition
  • SILAR successive ionic layer adsorption and reaction
  • the main thin-film temperature-difference cell structure can be the main structure of the thin-film thermo-electric cooler.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Secondary Cells (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Hybrid Cells (AREA)
EP09838672.5A 2009-01-20 2009-12-09 Thin film temperature-difference cell and fabricating method thereof Active EP2381497B1 (en)

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CN2009101051724A CN101521259B (zh) 2009-01-20 2009-01-20 一种薄膜温差电池及其制作方法
PCT/CN2009/075419 WO2010083705A1 (zh) 2009-01-20 2009-12-09 一种薄膜温差电池及其制作方法

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EP2381497A1 EP2381497A1 (en) 2011-10-26
EP2381497A4 EP2381497A4 (en) 2014-01-22
EP2381497B1 true EP2381497B1 (en) 2016-09-14

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EP (1) EP2381497B1 (ja)
JP (1) JP5468088B2 (ja)
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WO (1) WO2010083705A1 (ja)

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CN101521259B (zh) * 2009-01-20 2010-09-15 深圳大学 一种薄膜温差电池及其制作方法
WO2014114559A1 (de) * 2013-01-24 2014-07-31 O-Flexx Technologies Gmbh Thermoelektrisches bauteil, verfahren zu dessen herstellung und thermoelektrischer generator
JP6164569B2 (ja) * 2013-10-15 2017-07-19 住友電気工業株式会社 熱電素子および熱電素子の製造方法
JP6399251B2 (ja) * 2016-03-31 2018-10-03 株式会社村田製作所 熱電変換素子および熱電変換素子の製造方法
JP6689701B2 (ja) * 2016-07-27 2020-04-28 小島プレス工業株式会社 熱電変換モジュール及びその製造方法
CN107917754A (zh) * 2016-10-09 2018-04-17 深圳市彩煌实业发展有限公司 热电式激光功率探头及其制作方法
GB202101922D0 (en) * 2021-02-11 2021-03-31 Univ Oxford Innovation Ltd Thermoelectric generator device

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CN101521259A (zh) 2009-09-02
US9299907B2 (en) 2016-03-29
WO2010083705A1 (zh) 2010-07-29
EP2381497A4 (en) 2014-01-22
CN101521259B (zh) 2010-09-15
JP2012516030A (ja) 2012-07-12
US20110197942A1 (en) 2011-08-18
JP5468088B2 (ja) 2014-04-09
EP2381497A1 (en) 2011-10-26

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