JPS5646577A - Multilayer thermionic element and manufacture thereof - Google Patents
Multilayer thermionic element and manufacture thereofInfo
- Publication number
- JPS5646577A JPS5646577A JP12210979A JP12210979A JPS5646577A JP S5646577 A JPS5646577 A JP S5646577A JP 12210979 A JP12210979 A JP 12210979A JP 12210979 A JP12210979 A JP 12210979A JP S5646577 A JPS5646577 A JP S5646577A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- type
- junction
- thermionic element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052593 corundum Inorganic materials 0.000 abstract 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 3
- 229910021359 Chromium(II) silicide Inorganic materials 0.000 abstract 2
- 238000010285 flame spraying Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910019001 CoSi Inorganic materials 0.000 abstract 1
- 229910019974 CrSi Inorganic materials 0.000 abstract 1
- 108010071289 Factor XIII Proteins 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electron Tubes For Measurement (AREA)
Abstract
PURPOSE:To obtain a multilayer thermionic element by a simple method while improving the flexibility of the shape of the element by utilizing a plasma flame spraying process when forming the element. CONSTITUTION:An N type CoSi substrate 2 is mounted by using a fixing member 3 on a cooling plate 1, and a flame spraying gun 4 of an Ar/H2 plasma flame sprayer is arranged as opposed with the substrate 2. The device is thus constructed, Ar gas, H2 gas, the first and second powders are fed from directions 5, 6, 7 and 8 respectively into a welding gun 4, and a desired P-N junction is formed on the substrate 2 by the plasma torch 9 at the end. That is, Al2O3 film 10 and a CrSi2 film 11 of a P type material are covered on the substrate 2, a P-N junction 12 is first formed thereon, one thermionic element factor 13 is first formed, subsequently Al2O3 film 14, N type CrSi film 15, Al2O3 film 16, and P type CrSi2 film 17 are laminated thereon and precipitated, a P-N junction 18 is thus formed, and another thermionic element factor 19 is thus formed. Thus, there can be obtained two factors 13, 19 in a multilayer structured thermionic element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12210979A JPS5646577A (en) | 1979-09-25 | 1979-09-25 | Multilayer thermionic element and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12210979A JPS5646577A (en) | 1979-09-25 | 1979-09-25 | Multilayer thermionic element and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5646577A true JPS5646577A (en) | 1981-04-27 |
Family
ID=14827855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12210979A Pending JPS5646577A (en) | 1979-09-25 | 1979-09-25 | Multilayer thermionic element and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5646577A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61229375A (en) * | 1985-04-03 | 1986-10-13 | Tohoku Metal Ind Ltd | Thermoelectric converting device |
JPH0193182A (en) * | 1987-10-05 | 1989-04-12 | Murata Mfg Co Ltd | Thermoelectric element |
WO1995017020A1 (en) * | 1993-12-16 | 1995-06-22 | Mitsubishi Materials Corporation | Thermoelectric conversion element, thermoelectric conversion element array, and thermal displacement converter |
EP2381497A1 (en) * | 2009-01-20 | 2011-10-26 | Shenzhen University | Thin film temperature-difference cell and fabricating method thereof |
-
1979
- 1979-09-25 JP JP12210979A patent/JPS5646577A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61229375A (en) * | 1985-04-03 | 1986-10-13 | Tohoku Metal Ind Ltd | Thermoelectric converting device |
JPH0193182A (en) * | 1987-10-05 | 1989-04-12 | Murata Mfg Co Ltd | Thermoelectric element |
WO1995017020A1 (en) * | 1993-12-16 | 1995-06-22 | Mitsubishi Materials Corporation | Thermoelectric conversion element, thermoelectric conversion element array, and thermal displacement converter |
EP2381497A1 (en) * | 2009-01-20 | 2011-10-26 | Shenzhen University | Thin film temperature-difference cell and fabricating method thereof |
JP2012516030A (en) * | 2009-01-20 | 2012-07-12 | シェンジェン ツェイ ホアン エンタープライズ アンド ディベロップメント カンパニー リミテッド | Thin film thermoelectric generator and manufacturing method thereof |
EP2381497A4 (en) * | 2009-01-20 | 2014-01-22 | Shenzhen Caihuang Entpr & Dev Co Ltd | Thin film temperature-difference cell and fabricating method thereof |
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