JPS5646577A - Multilayer thermionic element and manufacture thereof - Google Patents

Multilayer thermionic element and manufacture thereof

Info

Publication number
JPS5646577A
JPS5646577A JP12210979A JP12210979A JPS5646577A JP S5646577 A JPS5646577 A JP S5646577A JP 12210979 A JP12210979 A JP 12210979A JP 12210979 A JP12210979 A JP 12210979A JP S5646577 A JPS5646577 A JP S5646577A
Authority
JP
Japan
Prior art keywords
film
substrate
type
junction
thermionic element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12210979A
Other languages
Japanese (ja)
Inventor
Tatsushiro Ochiai
Yoshikazu Narumiya
Junpei Oota
Takashi Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP12210979A priority Critical patent/JPS5646577A/en
Publication of JPS5646577A publication Critical patent/JPS5646577A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electron Tubes For Measurement (AREA)

Abstract

PURPOSE:To obtain a multilayer thermionic element by a simple method while improving the flexibility of the shape of the element by utilizing a plasma flame spraying process when forming the element. CONSTITUTION:An N type CoSi substrate 2 is mounted by using a fixing member 3 on a cooling plate 1, and a flame spraying gun 4 of an Ar/H2 plasma flame sprayer is arranged as opposed with the substrate 2. The device is thus constructed, Ar gas, H2 gas, the first and second powders are fed from directions 5, 6, 7 and 8 respectively into a welding gun 4, and a desired P-N junction is formed on the substrate 2 by the plasma torch 9 at the end. That is, Al2O3 film 10 and a CrSi2 film 11 of a P type material are covered on the substrate 2, a P-N junction 12 is first formed thereon, one thermionic element factor 13 is first formed, subsequently Al2O3 film 14, N type CrSi film 15, Al2O3 film 16, and P type CrSi2 film 17 are laminated thereon and precipitated, a P-N junction 18 is thus formed, and another thermionic element factor 19 is thus formed. Thus, there can be obtained two factors 13, 19 in a multilayer structured thermionic element.
JP12210979A 1979-09-25 1979-09-25 Multilayer thermionic element and manufacture thereof Pending JPS5646577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12210979A JPS5646577A (en) 1979-09-25 1979-09-25 Multilayer thermionic element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12210979A JPS5646577A (en) 1979-09-25 1979-09-25 Multilayer thermionic element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5646577A true JPS5646577A (en) 1981-04-27

Family

ID=14827855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12210979A Pending JPS5646577A (en) 1979-09-25 1979-09-25 Multilayer thermionic element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5646577A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229375A (en) * 1985-04-03 1986-10-13 Tohoku Metal Ind Ltd Thermoelectric converting device
JPH0193182A (en) * 1987-10-05 1989-04-12 Murata Mfg Co Ltd Thermoelectric element
WO1995017020A1 (en) * 1993-12-16 1995-06-22 Mitsubishi Materials Corporation Thermoelectric conversion element, thermoelectric conversion element array, and thermal displacement converter
EP2381497A1 (en) * 2009-01-20 2011-10-26 Shenzhen University Thin film temperature-difference cell and fabricating method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229375A (en) * 1985-04-03 1986-10-13 Tohoku Metal Ind Ltd Thermoelectric converting device
JPH0193182A (en) * 1987-10-05 1989-04-12 Murata Mfg Co Ltd Thermoelectric element
WO1995017020A1 (en) * 1993-12-16 1995-06-22 Mitsubishi Materials Corporation Thermoelectric conversion element, thermoelectric conversion element array, and thermal displacement converter
EP2381497A1 (en) * 2009-01-20 2011-10-26 Shenzhen University Thin film temperature-difference cell and fabricating method thereof
JP2012516030A (en) * 2009-01-20 2012-07-12 シェンジェン ツェイ ホアン エンタープライズ アンド ディベロップメント カンパニー リミテッド Thin film thermoelectric generator and manufacturing method thereof
EP2381497A4 (en) * 2009-01-20 2014-01-22 Shenzhen Caihuang Entpr & Dev Co Ltd Thin film temperature-difference cell and fabricating method thereof

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