EP2041794A4 - OPTOELEKTRONISCHE UND ELEKTRONISCHE BAUELEMENTE UNTER VERWENDUNG EINES N-FACE- ODER M-PLANE-GaN-SUBSTRATS AUS AMMONOTHERMALER ZÜCHTUNG - Google Patents

OPTOELEKTRONISCHE UND ELEKTRONISCHE BAUELEMENTE UNTER VERWENDUNG EINES N-FACE- ODER M-PLANE-GaN-SUBSTRATS AUS AMMONOTHERMALER ZÜCHTUNG

Info

Publication number
EP2041794A4
EP2041794A4 EP07809717A EP07809717A EP2041794A4 EP 2041794 A4 EP2041794 A4 EP 2041794A4 EP 07809717 A EP07809717 A EP 07809717A EP 07809717 A EP07809717 A EP 07809717A EP 2041794 A4 EP2041794 A4 EP 2041794A4
Authority
EP
European Patent Office
Prior art keywords
electronic
opto
face
gan substrate
substrate prepared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07809717A
Other languages
English (en)
French (fr)
Other versions
EP2041794A2 (de
Inventor
Tadao Hashimoto
Hitoshi Sato
Shuji Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
University of California
Original Assignee
Japan Science and Technology Agency
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency, University of California filed Critical Japan Science and Technology Agency
Publication of EP2041794A2 publication Critical patent/EP2041794A2/de
Publication of EP2041794A4 publication Critical patent/EP2041794A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Junction Field-Effect Transistors (AREA)
EP07809717A 2006-06-21 2007-06-20 OPTOELEKTRONISCHE UND ELEKTRONISCHE BAUELEMENTE UNTER VERWENDUNG EINES N-FACE- ODER M-PLANE-GaN-SUBSTRATS AUS AMMONOTHERMALER ZÜCHTUNG Withdrawn EP2041794A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81550706P 2006-06-21 2006-06-21
PCT/US2007/014383 WO2007149487A2 (en) 2006-06-21 2007-06-20 Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth

Publications (2)

Publication Number Publication Date
EP2041794A2 EP2041794A2 (de) 2009-04-01
EP2041794A4 true EP2041794A4 (de) 2010-07-21

Family

ID=38834097

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07809717A Withdrawn EP2041794A4 (de) 2006-06-21 2007-06-20 OPTOELEKTRONISCHE UND ELEKTRONISCHE BAUELEMENTE UNTER VERWENDUNG EINES N-FACE- ODER M-PLANE-GaN-SUBSTRATS AUS AMMONOTHERMALER ZÜCHTUNG

Country Status (4)

Country Link
US (3) US7755172B2 (de)
EP (1) EP2041794A4 (de)
JP (1) JP5604102B2 (de)
WO (1) WO2007149487A2 (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005035722B9 (de) 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US20100095882A1 (en) * 2008-10-16 2010-04-22 Tadao Hashimoto Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
US9466481B2 (en) * 2006-04-07 2016-10-11 Sixpoint Materials, Inc. Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
US8764903B2 (en) * 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US20150337457A1 (en) * 2006-04-07 2015-11-26 Sixpoint Materials, Inc. Group iii nitride bulk crystals and their fabrication method
KR100815225B1 (ko) * 2006-10-23 2008-03-19 삼성전기주식회사 수직구조 발광다이오드 소자 및 그 제조방법
US8193020B2 (en) 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
EP2087507A4 (de) * 2006-11-15 2010-07-07 Univ California Verfahren zum heteroepitaxialwachstum von qualitativ hochwertigem n-seiten-gan, inn und ain und ihren legierungen durch metallorganische chemische aufdampfung
JP4739255B2 (ja) * 2007-03-02 2011-08-03 豊田合成株式会社 半導体結晶の製造方法
US8361222B2 (en) * 2007-04-24 2013-01-29 Toyoda Gosei Co., Ltd. Method for producing group III nitride-based compound semiconductor
EP2171748A1 (de) * 2007-07-26 2010-04-07 S.O.I.Tec Silicon on Insulator Technologies Epitaktische verfahren und damit gezüchtete templates
JP5208463B2 (ja) * 2007-08-09 2013-06-12 ローム株式会社 窒化物半導体素子および窒化物半導体素子の製造方法
US20090075455A1 (en) * 2007-09-14 2009-03-19 Umesh Mishra Growing N-polar III-nitride Structures
TWI487817B (zh) 2008-02-25 2015-06-11 Sixpoint Materials Inc 用於製造第iii族氮化物晶圓之方法及第iii族氮化物晶圓
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
KR101810613B1 (ko) * 2008-05-28 2017-12-20 더 리전츠 오브 더 유니버시티 오브 캘리포니아 육방정 우르차이트 단결정
US20100075107A1 (en) * 2008-05-28 2010-03-25 The Regents Of The University Of California Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate
TWI460322B (zh) 2008-06-04 2014-11-11 Sixpoint Materials Inc 藉由氨熱生長法自初始第iii族氮化物種產生具改良結晶度之第iii族氮化物晶體之方法
EP2291551B1 (de) 2008-06-04 2018-04-25 SixPoint Materials, Inc. Hochdruckgefäss zur züchtung von gruppe-iii-nitrid-kristallen und verfahren zur züchtung von gruppe-iii-nitrid-kristallen mithilfe des hochdruckgefässes sowie gruppe-iii-nitrid-kristall
JP5377521B2 (ja) 2008-06-12 2013-12-25 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物ウェハーを試験する方法および試験データを伴うｉｉｉ族窒化物ウェハー
US20090309127A1 (en) * 2008-06-13 2009-12-17 Soraa, Inc. Selective area epitaxy growth method and structure
JP4475358B1 (ja) * 2008-08-04 2010-06-09 住友電気工業株式会社 ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、及びエピタキシャルウエハ
WO2010017232A1 (en) * 2008-08-07 2010-02-11 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
WO2010027016A1 (ja) * 2008-09-05 2010-03-11 シャープ株式会社 窒化物半導体発光素子および半導体発光素子
WO2010052810A1 (ja) 2008-11-06 2010-05-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US8852341B2 (en) 2008-11-24 2014-10-07 Sixpoint Materials, Inc. Methods for producing GaN nutrient for ammonothermal growth
US8679942B2 (en) * 2008-11-26 2014-03-25 Soitec Strain engineered composite semiconductor substrates and methods of forming same
EP2377153A1 (de) * 2008-12-19 2011-10-19 S.O.I.Tec Silicon on Insulator Technologies Verspannungsgestaltete verbundhalbleitersubstrate und verfahren zu ihrer herstellung
BRPI1006937A2 (pt) * 2009-01-20 2016-04-12 Picker Technologies Llc desacelerador compreendendo tanque de desaceleração e transportador de extração
JP5779171B2 (ja) 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド ＳｉＣ単結晶の昇華成長方法及び装置
WO2010113238A1 (ja) * 2009-04-03 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
WO2010113237A1 (ja) * 2009-04-03 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
WO2010116703A1 (ja) * 2009-04-06 2010-10-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP2011103400A (ja) * 2009-11-11 2011-05-26 Sumitomo Electric Ind Ltd 化合物半導体素子
JP4843122B2 (ja) * 2009-12-25 2011-12-21 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP4820465B1 (ja) * 2010-04-02 2011-11-24 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5776021B2 (ja) 2010-04-02 2015-09-09 パナソニックＩｐマネジメント株式会社 窒化物系半導体素子及び光源
EP2565943A1 (de) * 2010-04-28 2013-03-06 Panasonic Corporation Nitridhalbleiterelement und herstellungsverfahren dafür
JP5672868B2 (ja) * 2010-08-31 2015-02-18 富士通株式会社 化合物半導体装置及びその製造方法
US9236530B2 (en) * 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
US20140203329A1 (en) * 2011-06-03 2014-07-24 Summitomo Electric Industries, Ltd. Nitride electronic device and method for fabricating nitride electronic device
JP6089032B2 (ja) 2011-06-27 2017-03-01 シックスポイント マテリアルズ， インコーポレイテッド 遷移金属窒化物および遷移金属窒化物の合成方法
US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
CN104024152A (zh) * 2011-10-24 2014-09-03 加利福尼亚大学董事会 利用碱土金属减少杂质掺入iii-族氮化物晶体
US10435812B2 (en) 2012-02-17 2019-10-08 Yale University Heterogeneous material integration through guided lateral growth
DE102012106998A1 (de) 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Reflektierendes Kontaktschichtsystem für ein optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US9312129B2 (en) 2012-09-05 2016-04-12 Saint-Gobain Cristaux Et Detecteurs Group III-V substrate material with particular crystallographic features and methods of making
WO2014097931A1 (ja) 2012-12-17 2014-06-26 三菱化学株式会社 窒化ガリウム基板、および、窒化物半導体結晶の製造方法
WO2014144698A2 (en) * 2013-03-15 2014-09-18 Yale University Large-area, laterally-grown epitaxial semiconductor layers
US9978589B2 (en) 2014-04-16 2018-05-22 Yale University Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and devices on sapphire substrates
CN106233429B (zh) 2014-04-16 2019-06-18 耶鲁大学 获得平坦的半极性氮化镓表面的方法
US20160117076A1 (en) * 2014-10-22 2016-04-28 Lg Electronics Inc. Mobile terminal and control method thereof
KR20190038639A (ko) 2016-08-12 2019-04-08 예일 유니버시티 성장 동안 질소 극성 패시트를 제거함으로써 외래 기판 상에 성장된 적층 무결함 반극성 및 비극성 GaN
JP6994835B2 (ja) 2017-03-03 2022-01-14 株式会社サイオクス 窒化物半導体基板の製造方法および窒化物半導体基板
CN117012809B (zh) * 2023-09-27 2023-12-22 江西兆驰半导体有限公司 氮化镓基高电子迁移率晶体管外延片及其制备方法、hemt

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2796657A1 (fr) * 1999-07-20 2001-01-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
WO2003035945A2 (en) * 2001-10-26 2003-05-01 Ammono Sp. Zo.O. Substrate for epitaxy
WO2004003261A1 (en) * 2002-06-26 2004-01-08 Ammono Sp. Z O.O. Process for obtaining of bulk monocrystallline gallium-containing nitride

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6398867B1 (en) * 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
WO2002021604A1 (fr) * 2000-09-08 2002-03-14 Sharp Kabushiki Kaisha Dispositif emetteur de lumiere a semi-conducteurs au nitrure
US7053413B2 (en) * 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
EP1576210B1 (de) * 2002-12-11 2010-02-10 AMMONO Sp. z o.o. Substrat für epitaxie und verfahren zu seiner herstellung
US7098487B2 (en) * 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7153480B2 (en) * 2003-05-22 2006-12-26 David Robert Bickham Apparatus for and method of producing aromatic carboxylic acids
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
JP2005191530A (ja) * 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
US7408199B2 (en) * 2004-04-02 2008-08-05 Nichia Corporation Nitride semiconductor laser device and nitride semiconductor device
WO2006116030A2 (en) * 2005-04-21 2006-11-02 Aonex Technologies, Inc. Bonded intermediate substrate and method of making same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2796657A1 (fr) * 1999-07-20 2001-01-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
WO2003035945A2 (en) * 2001-10-26 2003-05-01 Ammono Sp. Zo.O. Substrate for epitaxy
WO2004003261A1 (en) * 2002-06-26 2004-01-08 Ammono Sp. Z O.O. Process for obtaining of bulk monocrystallline gallium-containing nitride

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DIMITROV R ET AL: "Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US LNKD- DOI:10.1063/1.372353, vol. 87, no. 7, 1 April 2000 (2000-04-01), pages 3375 - 3380, XP012049755, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
JP2009541997A (ja) 2009-11-26
WO2007149487A3 (en) 2008-11-13
WO2007149487A8 (en) 2008-05-29
US7755172B2 (en) 2010-07-13
US20080001165A1 (en) 2008-01-03
WO2007149487A2 (en) 2007-12-27
EP2041794A2 (de) 2009-04-01
JP5604102B2 (ja) 2014-10-08
US8263424B2 (en) 2012-09-11
US20130015492A1 (en) 2013-01-17
US20100275837A1 (en) 2010-11-04

Similar Documents

Publication Publication Date Title
EP2041794A4 (de) OPTOELEKTRONISCHE UND ELEKTRONISCHE BAUELEMENTE UNTER VERWENDUNG EINES N-FACE- ODER M-PLANE-GaN-SUBSTRATS AUS AMMONOTHERMALER ZÜCHTUNG
ZA200807182B (en) Pulsed growth of gan nanowires and applications in group III nitride semiconductor substrate materials and devices
TWI368675B (en) Nitride-based semiconductor substrate and semiconductor device
EP2070122A4 (de) Lichtemittierende iii-nitrid-elemente mit einem oder mehreren resonanzreflektoren und reflexionsmanipulierte wachstumsmatrizen für derartige elemente sowie verfahren
TWI341021B (en) Electronic substrate, semiconductor device, and electronic device
TWI340478B (en) Gallium nitride-based compound semiconductor light-emitting device
EP1758171A4 (de) Vertikales galliumnitrid-halbleiterbauelement und epitaktisches substrat
EP1949462A4 (de) Lichtemittierende halbleitervorrichtung auf basis einer galliumnitridverbindung
EP2211376A4 (de) Iii-nitridelektronikbauelement und iii-nitridhalbleiterepitaxialsubstrat
EP1922769A4 (de) Auf galliumnitrid basierende zusammensetzung halbleiter-leuchtbauelement und herstellungsverfahren dafür
EP2246910A4 (de) Halbleitersubstrat, halbleiterelement, lichtemittierendes element und elektronisches element
EP2221856A4 (de) Nitridhalbleiter, nitridhalbleiter-kristallwachstumsverfahren und nitridhalbleiter-leuchtelement
EP2360719A4 (de) Epitaktisches substrat für elektronische vorrichtungen und herstellungsverfahren dafür
EP2357661A4 (de) Epitaktisches substrat für eine elektronische vorrichtung und herstellungsverfahren dafür
EP2221855A4 (de) Nitridhalbleiter und nitridhalbleiter-kristallwachstumsverfahren
EP1900013A4 (de) Technik für wachstum und herstellung von semipolaren (ga, al, in, b)n dünnfilmen, heterostrukturen und bauelementen
GB0821002D0 (en) Compound semiconductor epitaxial substrate and method for producing the same
EP1984955A4 (de) Auf gan basierende halbleiter-leuchtanordnung und herstellungsverfahren dafür
EP1851048A4 (de) Zusammensetzungen mit lochinjektions-/transportschicht und vorrichtungen
GB0724781D0 (en) Substrate and semiconductor light emitting element
TWI315892B (en) Normally off iii-nitride semiconductor device having a programmable gate
HK1112109A1 (en) Technique for the growth of planar semi-polar gallium nitride
EP2154272A4 (de) Verfahren zu herstellung eines halbleiterkristalls aus einem nitrid eines elements der gruppe iii, aus einem nitrid eines elements der gruppe iii hergestelltes halbleitersubstrat und lichtemittierende halbleitervorrichtung
EP2179444A4 (de) Halbleiterpaket mit durchgangsloch-elektrode und einem lichtübertragenden substrat
EP1987540A4 (de) Halbleiterbauelement mit verbesserter lötnaht

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20090112

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

RIN1 Information on inventor provided before grant (corrected)

Inventor name: NAKAMURA, SHUJI

Inventor name: SATO, HITOSHI

Inventor name: HASHIMOTO, TADAO

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20100622

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/02 20060101ALI20100616BHEP

Ipc: H01L 29/04 20060101AFI20090204BHEP

RIN1 Information on inventor provided before grant (corrected)

Inventor name: NAKAMURA, SHUJI

Inventor name: SATO, HITOSHI

Inventor name: HASHIMOTO, TADAO

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20150106