EP2006921B1 - Procédé de fabrication d'une diode électroluminescente à base de GaN - Google Patents

Procédé de fabrication d'une diode électroluminescente à base de GaN Download PDF

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EP2006921B1
EP2006921B1 EP07740595.9A EP07740595A EP2006921B1 EP 2006921 B1 EP2006921 B1 EP 2006921B1 EP 07740595 A EP07740595 A EP 07740595A EP 2006921 B1 EP2006921 B1 EP 2006921B1
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Prior art keywords
light emitting
pyramid
layer
truncated
emitting device
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EP2006921A1 (fr
EP2006921A4 (fr
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Hiroshi Osawa
Hironao Shinohara
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Definitions

  • the present invention relates to a light emitting device, and in particular relates to a method for producing a light emitting device that is highly reliable and has excellent light emission efficiency and a lamp that includes the light emitting device produced by employing the method.
  • GaN gallium nitride
  • MOCVD metal organic chemical vapor deposition method
  • MBE method molecular beam epitaxial method
  • a common GaN based compound semiconductor light emitting device is configured so that an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are laminated in this order when a sapphire single crystal is used as a substrate. Since the sapphire substrate is an insulator, the structure of a device using the substrate will generally be a structure, as shown in FIG. 1 , where a positive electrode formed on a p-type semiconductor layer and a negative electrode formed on an n-type semiconductor layer are present on the same plane.
  • GaN based compound semiconductor light emitting devices there are two kinds of devices, that is, a face up type device, in which light is emitted from the p-type semiconductor by using a transparent electrode as a positive electrode, and a flip chip type device in which light is emitted from the sapphire substrate by using a highly reflective film made of Ag or the like as a positive electrode.
  • a metallic transparent electrode made of Ni/Au or the like has been used conventionally.
  • a translucent conductive oxide film made of ITO or the like has been developed on an industrial level in recent years and its use has been encouraged.
  • the external quantum efficiency is used as an indicator for the improvements in the output of such light emitting devices.
  • this external quantum efficiency is high, it is possible to say that the light emitting device has a high output.
  • the external quantum efficiency is represented as the product of internal quantum efficiency and light emission efficiency.
  • the internal quantum efficiency refers to the ratio at which the energy of an electric current applied to the device is converted to light.
  • the light emission efficiency refers to the ratio at which light generated inside a semiconductor crystal is emitted to the outside.
  • Examples of the methods for reducing the reflection loss that occurs in the interfaces between the materials having different refractive indices include a technique that forms an uneven pattern composed of a convex shape or a concave shape on the light emitting surface.
  • a technique that forms an uneven pattern composed of a convex shape or a concave shape on the light emitting surface As an example where the method of forming an uneven pattern composed of a convex shape or a concave shape is applied, a light emitting device in which a compound semiconductor itself is subjected to processing for forming uneven patterns composed of a convex shape or a concave shape has been proposed (for example, refer to Patent Document 1).
  • a method has been proposed in which an uneven pattern composed of a convex shape or a concave shape is formed on a sapphire substrate instead of a compound semiconductor itself, and by growing a compound semiconductor on the substrate, the uneven pattern composed of a convex shape or a concave shape is formed on the compound semiconductor as a result, which leads to improvements in the light emission efficiency (for example, refer to Patent Document 2).
  • JP 2006 002244 A , JP 2005 336520 A and JP 2004 339547 A disclose sputtering techniques in an apparatus having a pivoted magnetron magnetic circuit.
  • the present invention is made in view of the abovementioned problems and its object is to provide a method for producing a light emitting device that has excellent light emitting properties and light emission efficiency and a lamp thereof by stably forming a buffer layer on a sapphire substrate, in which an uneven pattern composed of a convex shape or a concave shape is formed, so as to improve the crystallinity of a GaN based semiconductor layer to be grown thereon.
  • the present inventors completed the present invention as a result of intensive studies in order to solve the above problems.
  • the present invention is defined in claim 1.
  • a first aspect of the present invention is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape or a concave shape is formed, characterized by including a step for forming the buffer layer by a sputtering method.
  • a second aspect of the present invention is the method for producing a GaN based semiconductor light emitting device according to the above first aspect characterized in that the sputtering method is conducted in an apparatus having a pivoted magnetron magnetic circuit.
  • a third aspect of the present invention is the method for producing a GaN based semiconductor light emitting device according to the above first aspect or second aspect characterized in that the buffer layer contains AlN, ZnO, Mg, or Hf.
  • a fourth aspect of the method for producing a GaN based semiconductor light emitting device characterized in that the buffer layer contains AlN.
  • a fifth aspect of the present invention is the method for producing a GaN based semiconductor light emitting device according to any one of the above first aspect to fourth aspect characterized in that the translucent substrate is a sapphire single crystal.
  • a sixth aspect of the present invention is the method for producing a GaN based semiconductor light emitting device according to any one of the above first aspect to fifth aspect characterized in that the convex shape is a truncated cone and the height of the truncated cone is greater than a bottom diameter of the truncated cone.
  • a seventh aspect of the present invention is the method for producing a GaN based semiconductor light emitting device according to any one of the above first aspect to fifth aspect characterized in that the convex shape is a truncated polygonal pyramid such as a truncated triangular pyramid, a truncated quadrangular pyramid, a truncated pentagonal pyramid, or a truncated hexagonal pyramid, and the height of the truncated polygonal pyramid is greater than a diagonal line of the bottom of the truncated polygonal pyramid.
  • An eighth aspect of the present invention is the method for producing a GaN based semiconductor light emitting device according to any one of the above first aspect to fifth aspect characterized in that the convex shape is a circular cone and the height of the circular cone is greater than the bottom diameter of the circular cone.
  • a ninth aspect of the present invention is the method for producing a GaN based semiconductor light emitting device according to any one of the above first aspect to fifth aspect characterized in that the convex shape is a polygonal pyramid such as a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid, and a hexagonal pyramid, and the height of the polygonal pyramid is greater than a diagonal line of the bottom of the polygonal pyramid.
  • the convex shape is a polygonal pyramid such as a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid, and a hexagonal pyramid, and the height of the polygonal pyramid is greater than a diagonal line of the bottom of the polygonal pyramid.
  • Another example of a method for producing a GaN based semiconductor light emitting device which does not form part of the present invention, is characterized in that the convex shape is a circular cylinder and the height of the circular cylinder is greater than the bottom diameter of the circular cylinder.
  • Another example of a method for producing a GaN based semiconductor light emitting device which does not form part of the present invention, is characterized in that the convex shape is a polygonal prism such as a triangular prism, a quadrangular prism, a pentagonal prism, and a hexagonal prism, and the height of the polygonal prism is greater than a diagonal line of a bottom of the polygonal prism.
  • the convex shape is a polygonal prism such as a triangular prism, a quadrangular prism, a pentagonal prism, and a hexagonal prism
  • the height of the polygonal prism is greater than a diagonal line of a bottom of the polygonal prism.
  • Another example of a method for producing a GaN based semiconductor light emitting device which does not form part of the present invention, is characterized in that the concave shape is a truncated cone, and a depth of the truncated cone is greater than the diameter of the top of the truncated cone and the diameter of the top surface of the truncated cone.
  • Another example of a method for producing a GaN based semiconductor light emitting device which does not form part of the present invention, is characterized in that the concave shape is a truncated polygonal pyramid such as a truncated triangular pyramid, a truncated quadrangular pyramid, a truncated pentagonal pyramid, or a truncated hexagonal pyramid, and the depth of the truncated polygonal pyramid is greater than a diagonal line of the top of the truncated polygonal pyramid.
  • Another example of a method for producing a GaN based semiconductor light emitting device which does not form part of the present invention, is characterized in that the concave shape is a circular cone, and the depth of the circular cone is greater than the diameter of the top of the circular cone.
  • Another example of a method for producing a GaN based semiconductor light emitting device which does not form part of the present invention, is characterized in that the concave shape is a polygonal pyramid such as a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid, or a hexagonal pyramid, and the depth of the polygonal pyramid is greater than a diagonal line of the top of the polygonal pyramid.
  • the concave shape is a polygonal pyramid such as a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid, or a hexagonal pyramid
  • the depth of the polygonal pyramid is greater than a diagonal line of the top of the polygonal pyramid.
  • Another example of a method for producing a GaN based semiconductor light emitting device which does not form part of the present invention, is characterized in that the concave shape is a circular cylinder, and a depth of the circular cylinder is greater than a diameter of a top of the circular cylinder.
  • Another example of a method for producing a GaN based semiconductor light emitting device which does not form part of the present invention, is characterized in that the concave shape is a polygonal prism such as a triangular prism, a quadrangular prism, a pentagonal prism, and a hexagonal prism, and the depth of the polygonal prism is greater than a diagonal line of the top of the polygonal prism.
  • the concave shape is a polygonal prism such as a triangular prism, a quadrangular prism, a pentagonal prism, and a hexagonal prism
  • the depth of the polygonal prism is greater than a diagonal line of the top of the polygonal prism.
  • Another example of a method for producing a GaN based semiconductor light emitting device which does not form part of the present invention, is characterized in that the concave shape is a stripe-shaped groove, and the depth of the groove is greater than the width of the groove.
  • a lamp including a light emitting device can be produced using a method for producing a GaN based semiconductor light emitting device according to any one of the above mentioned aspects.
  • the light emitting device of the present invention it is possible to stably form a buffer layer since the buffer layer is formed on a sapphire substrate, in which an uneven pattern composed of a convex shape is formed, by a sputtering method. Moreover, it is possible to form the buffer layer even more stably when an apparatus used in the sputtering method is equipped with a pivoted magnetron magnetic circuit.
  • the lamp of the present invention has excellent light emitting properties since the light emitting device of the present invention is used therein.
  • FIGS. 1 to 5 One example of a light emitting device and a lamp using the device will be described below while referring to FIGS. 1 to 5 where appropriate.
  • FIG. 1 is a diagram schematically showing a cross section of a light emitting device.
  • the reference numerals 101, 102, 103, 104, 105, 106, 107, and 108 show a substrate, a buffer layer, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, a transparent electrode, a positive electrode, and a negative electrode, respectively.
  • substrate As the substrate 101, known substrate materials including oxide single crystals such as a sapphire single crystal (Al 2 O 3 ; A-plane, C-plane, M-plane, and R-plane), a spinel single crystal (MgAl 2 O 4 ), a ZnO single crystal, a LiAlO 2 single crystal, a LiGaO 2 single crystal or a MgO single crystal, a Si single crystal, a SiC single crystal, a GaAs single crystal, an AlN single crystal, a GaN single crystal, and boride single crystals such as a ZrB 2 single crystal may be used. Also in the present invention, any translucent substrate materials including these known substrate materials can be used without any limitations. Among these, a sapphire single crystal is preferable. Note that the plane direction of the substrate 101 is not particularly limited. In addition, the substrate may be a just substrate or a substrate having an off angle.
  • the term "translucent" used in the present invention refers to a state where a material transmits light emitted from the GaN based semiconductor light emitting device, that is, the material may have a transmittance of 70% or more for light having wavelengths between 400 nm and 600 nm.
  • a known photolithography method may be used.
  • a nanoimprint process it is also possible to employ a nanoimprint process.
  • a mask made of nickel or the like is used, and a resist is coated on this mask and is then transferred to the surface of a titanium oxide based conductive film by pressing the resist-coated side of the mask thereto.
  • the steps which follow thereafter are the same as those in the known photolithography method.
  • the damage made on the mask may become a problem in some cases when the abovementioned nanoimprint process is employed since the mask coated with a resist is pressed directly on the sapphire substrate.
  • it is effective to produce a replica from the mask using water-soluble resin such as polyvinyl alcohol (PVA), coat a resist on this replica, and then transfer the resin to the surface of the titanium oxide based conductive film by pressing the replica thereto.
  • PVA polyvinyl alcohol
  • PVA polyvinyl alcohol
  • very little damage is made on the mask while producing a mask replica.
  • the mass production thereof will not be a problem due to the low cost of PVA.
  • the mask replica since the mask replica is water-soluble, it can readily be removed by water after transferring the resist.
  • the shape of the convex portion is not particularly limited and examples thereof include a circular cylinder, polygonal prisms such as a triangular prism, a quadrangular prism, a pentagonal prism, and a hexagonal prism, a circular cone, polygonal pyramids such as a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid, and a hexagonal pyramid, a truncated cone, and truncated polygonal pyramids such as a truncated triangular pyramid, a truncated quadrangular pyramid, a truncated pentagonal pyramid, and a truncated hexagonal pyramid.
  • the shape may be selected appropriately.
  • the width dimension of the bottom of the convex portion in the substrate be greater than or equal to that of the top thereof.
  • the size of the convex portion there are no limitations on the size of the convex portion. However, it is preferable that the diameter of the bottom surface of the convex portion or the length of the diagonal line thereof be within the range of 0.1 ⁇ m to 10 ⁇ m.
  • the convex portion Although it is possible to form the convex portion so that the diameter of the bottom of the convex portion or the length of the diagonal line thereof is less than 0.1 ⁇ m by employing a photolithography method, this process involves a high cost. Moreover, since the size of the light emitting device is generally in the range of 100 ⁇ m to 2,000 ⁇ m, when the diameter of the bottom of the convex portion or the length of the diagonal line thereof is greater than 10 ⁇ m, the convex portion will be too large to achieve satisfactory light emission efficiency. It is more preferable that the diameter of the bottom of the convex portion or the length of the diagonal line thereof be within the range of 0.1 ⁇ m to 2 ⁇ m.
  • the interval between the adjacent convex portions is not particularly limited as long as it is periodic, it is preferably within the range of 0.1 ⁇ m to 10 ⁇ m.
  • the convex portions are formed so that the interval between the adjacent convex portions is less than 0.1 ⁇ m by employing a photolithography method, this process involves a high cost. Moreover, since the size of the light emitting device is generally in the range of 100 ⁇ m to 2,000 ⁇ m, when the interval between the adjacent convex portions is greater than 10 ⁇ m, the interval will be too large to achieve satisfactory light emission efficiency. It is more preferable that the interval between the adjacent convex portions be within the range of 0.1 ⁇ m to 2 ⁇ m.
  • the height of the convex portion is not particularly limited, it is preferably within the range of 0.1 ⁇ m to 2.0 ⁇ m.
  • the height of the convex portion is less than 0.1 ⁇ m, the height is not satisfactory for the convex portion to contribute to the improvements in the light emission efficiency.
  • the height of the convex portion is greater than 2.0 ⁇ m, the height is inadequate since the productivity drops considerably, although the convex portion does contribute to improvements in the light emission efficiency.
  • the size of the convex portion satisfies the following relationship; i.e., (diameter of the bottom of the convex portion or the length of the diagonal line thereof) ⁇ (height of the convex portion).
  • the convex portion having a size that satisfies the above relationship makes it possible to effectively improve the light emission efficiency even further.
  • the height of the truncated cone be greater than the diameter of the bottom of the truncated cone.
  • the shape of the convex is a truncated polygonal pyramid such as a truncated triangular pyramid, a truncated quadrangular pyramid, a truncated pentagonal pyramid, or a truncated hexagonal pyramid
  • the height of the truncated polygonal pyramid be greater than the diagonal line of the bottom of the truncated polygonal pyramid.
  • the shape of the convex is a circular cone
  • the height of the circular cone be greater than the diameter of the bottom of the circular cone.
  • the shape of the convex is a polygonal pyramid such as a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid, or a hexagonal pyramid
  • the height of the polygonal pyramid be greater than the diagonal line of the bottom of the polygonal pyramid.
  • the height of the circular cylinder be greater than the diameter of the bottom of the circular cylinder.
  • the shape of the convex is a polygonal prism such as a triangular prism, a quadrangular prism, a pentagonal prism, or a hexagonal prism
  • the height of the polygonal prism be greater than the diagonal line of the bottom of the polygonal prism.
  • the depth of the groove be greater than the width of the groove.
  • the shape of the concave portion is not particularly limited and examples thereof include a circular cylinder, polygonal prisms such as a triangular prism, a quadrangular prism, a pentagonal prism, or a hexagonal prism, a circular cone, polygonal pyramids such as a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid, or a hexagonal pyramid, a truncated cone, and truncated polygonal pyramids such as a truncated triangular pyramid, a truncated quadrangular pyramid, a truncated pentagonal pyramid, or a truncated hexagonal pyramid.
  • the shape may be selected appropriately.
  • the width dimension of the top of the concave portion in the substrate be greater than or equal to that of the bottom thereof.
  • the size of the concave portion there are no limitations on the size of the concave portion. However, it is preferable that the diameter of the top of the concave portion or the length of the diagonal line thereof be within the range of 0.1 ⁇ m to 10 ⁇ m.
  • the concave portion Although it is possible to form the concave portion so that the diameter of the bottom surface of the concave portion or the length of the diagonal line thereof is less than 0.1 ⁇ m by employing a photolithography method, this process involves a high cost. Moreover, since the size of the light emitting device is generally in the range of 100 ⁇ m to 2,000 ⁇ m, when the diameter of the top of the concave portion or the length of the diagonal line thereof is greater than 10 ⁇ m, the concave portion will be too large to achieve satisfactory light emission efficiency. It is more preferable that the diameter of the top of the concave portion or the length of the diagonal line thereof be within the range of 0.1 ⁇ m to 2 ⁇ m.
  • the interval between the adjacent concave portions is not particularly limited as long as it is periodic, it is preferably within the range of 0.1 ⁇ m to 10 ⁇ m.
  • the concave portions are formed so that the interval between the adjacent concave portions is less than 0.1 ⁇ m by employing a photolithography method, this process involves a high cost. Moreover, since the size of the light emitting device is generally in the range of 100 ⁇ m to 2,000 ⁇ m, when the interval between the adjacent concave portions is greater than 10 ⁇ m, the interval will be too large to achieve satisfactory light emission efficiency. It is more preferable that the interval between the adjacent concave portions be within the range of 0.1 ⁇ m to 2 ⁇ m.
  • the depth of the concave portion is not particularly limited, it is preferably within the range of 0.1 ⁇ m to 2.0 ⁇ m.
  • the depth of the concave portion When the depth of the concave portion is less than 0.1 ⁇ m, the depth is not satisfactory for the concave portion to contribute to the improvements in the light emission efficiency. On the other hand, when the depth of the concave portion is greater than 2.0 ⁇ m, the depth is inadequate since the productivity drops considerably, although the concave portion does contribute to the improvements in the light emission efficiency.
  • the size of the concave portion satisfies the following relationship; i.e., (diameter of the top of the concave portion or the length of the diagonal line thereof) ⁇ (depth of the concave portion).
  • the concave portion having a size that satisfies the above relationship makes it possible to effectively improve the light emission efficiency even further.
  • the depth of the truncated cone be greater than the diameter of the top of the truncated cone and the diameter of the top surface of the truncated cone.
  • the shape of the concave is a truncated polygonal pyramid such as a truncated triangular pyramid, a truncated quadrangular pyramid, a truncated pentagonal pyramid, or a truncated hexagonal pyramid
  • the depth of the truncated polygonal pyramid be greater than the diagonal line of the top of the truncated polygonal pyramid.
  • the depth of the circular cone be greater than the diameter of the top of the circular cone.
  • the shape of the concave is a polygonal pyramid such as a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid, or a hexagonal pyramid
  • the depth of the polygonal pyramid be greater than the diagonal line of the top of the polygonal pyramid.
  • the depth of the circular cylinder be greater than the diameter of the top of the circular cylinder.
  • the shape of the concave is a polygonal prism such as a triangular prism, a quadrangular prism, a pentagonal prism, or a hexagonal prism
  • the depth of the polygonal prism be greater than the diagonal line of the top of the polygonal prism.
  • the depth of the groove be greater than the width of the groove.
  • the buffer layer is generally formed by the metalorganic chemical vapor deposition (MOCVD) method.
  • MOCVD metalorganic chemical vapor deposition
  • the buffer layer can be formed without particularly being affected by the uneven pattern composed of a convex shape or a concave shape. Moreover, the sputtering method employing an apparatus equipped with a pivoted magnetron magnetic circuit is more preferable.
  • FIGS. 4 and 5 The principle of the sputtering method will be described using FIGS. 4 and 5 . Since the uneven pattern composed of a convex shape or a concave shape is extremely small, it is dealt as a point 206 in the present description.
  • a magnetron magnetic circuit is a fixed type as shown in FIG. 4
  • the direction of the sputtered particles entering into the uneven pattern 206 composed of a convex shape or a concave shape is limited to only one direction.
  • a magnetron magnetic circuit is a pivoted type as shown in FIG. 5
  • the sputtered particles entering into the uneven pattern 206 composed of a convex shape or a concave shape can be directed in a variety of directions.
  • the sputtered particles enter only from one direction, it is inevitable that some parts will be shaded when the uneven pattern composed of a convex shape or a concave shape is present, creating some regions where no film is formed. On the other hand, when the sputtered particles are entering from various directions, shaded parts are unlikely to be formed and it will be possible to form a film all over the surface throughout the uneven pattern composed of a convex shape or a concave shape.
  • a pivoted magnetron magnetic circuit is capable of any movement, it is preferable that the pivoted magnetron magnetic circuit be moved in parallel with respect to the target.
  • the movement be a reciprocating movement.
  • the movement speed may be constant.
  • the movement speed is slow at the end of the reciprocating movement and is fastest at the center of the reciprocating movement based on a simple harmonic oscillating mechanism, it is possible to achieve an even more uniform film thickness.
  • the film can be formed by employing either direct current (DC) or radio frequency (RF).
  • DC direct current
  • RF radio frequency
  • an AlN layer it can be formed by employing RF while using an AlN target or by a reactive sputtering method in an N 2 atmosphere using an Al target.
  • the reactive sputtering method can employ either RF or DC, since it is possible that insulating deposits attach onto the target to cause an abnormal electrical discharge, the employment of RF is more preferable.
  • GaN layer An n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, each composed of a GaN based semiconductor, are usually laminated on a substrate 101 with a GaN layer 102 serving as a buffer layer interposed therebetween.
  • the buffer layer is formed by the sputtering method.
  • the GaN based semiconductor may include group III elements other than Al, Ga, and In, and it may also include elements, such as Ge, Si, Mg, Ca, Zn, Be, P, As, or B, if necessary.
  • the elements contained are not limited to those added intentionally and there are also cases where the semiconductor contains impurities that are inevitably contained depending on the film forming conditions and the like, as well as the trace impurities contained in the source materials and the reaction tube materials.
  • the method for growing GaN based semiconductor is not particularly limited and all the methods that are known to grow a GaN based semiconductor such as the metalorganic chemical vapor deposition (MOCVD) method, the hydride vapor phase epitaxy (HVPE) method, or the molecular beam epitaxy (MBE) method can be applied.
  • MOCVD metalorganic chemical vapor deposition
  • HVPE hydride vapor phase epitaxy
  • MBE molecular beam epitaxy
  • the MOCVD method is preferable as the growing method in view of its film thickness controllability and mass productivity.
  • hydrogen (H 2 ) or nitrogen (N 2 ) is used as a carrier gas; trimethylgallium (TMG) or triethylgallium (TEG) is used as a Ga source, trimethylaluminum (TMA) or triethylaluminum(TEA) is used as an Al source, trimethylindium (TMI) or triethylindium (TEI) is used as an In source, each of which is a group III material; and ammonium (NH 3 ) or hydrazine (N 2 H 4 ) is used as a nitrogen (N) source, which is a group V material.
  • TMG trimethylgallium
  • TAG triethylgallium
  • TMA triethylaluminum
  • TI triethylaluminum
  • In source each of which is a group III material
  • ammonium (NH 3 ) or hydrazine (N 2 H 4 ) is used as a nitrogen (N) source, which is a
  • germane gas (GeH 4 ) or organic germanium compounds such as tetramethylgermanium ((CH 3 ) 4 Ge) and tetraethylgermanium ((C 2 H 5 ) 4 Ge) can be used as a Ge source material.
  • elemental germanium can also be used as a doping source.
  • elemental germanium can also be used as a doping source.
  • Cp 2 Mg biscyclopentadienyl magnesium
  • EtCp 2 Mg bisethylcyclopentadienyl magnesium
  • the n-type semiconductor layer 2 is usually configured from an underlying layer, an n-contact layer, and an n-cladding layer.
  • the n-contact layer can also serve as an underlying layer and/or an n-cladding layer.
  • the underlying layer is preferably constituted from an Al X Ga 1-X N layer (0 ⁇ X ⁇ 1, preferably 0 ⁇ X ⁇ 0.5 and more preferably 0 ⁇ X ⁇ 0.1).
  • Film thickness of the underlying layer is greater than or equal to 0.1 ⁇ m, preferably greater than or equal to 0.5 ⁇ m, and more preferably greater than or equal to 1 ⁇ m.
  • the Al X Ga 1-X N layer with satisfactory crystallinity is likely to be obtained by making the film thickness greater than or equal to the above range.
  • the underlying layer may be doped with an n-type impurity within the range of 1 ⁇ 10 17 to 1 ⁇ 10 19 /cm 3 if required. However, it is preferable that the underlying layer be undoped ( ⁇ 1 ⁇ 10 17 /cm 3 ) in view of the maintenance of satisfactory crystallinity.
  • n-type impurities are not particularly limited, examples thereof include Si, Ge, and Sn and Si and Ge are preferable.
  • Growth temperature for growing the underlying layer is preferably 800 to 1,200°C and it is more preferable to adjust it within the range of 1,000 to 1,200°C.
  • the underlying layer with satisfactory crystallinity is obtained when it is grown within this growth temperature range.
  • the pressure inside the MOCVD growth furnace is adjusted within the range of 15 to 40 kPa.
  • the n-contact layer is preferably constituted from an Al X Ga 1-X N layer (0 ⁇ X ⁇ 1, preferably 0 ⁇ X ⁇ 0.5 and more preferably 0 ⁇ X ⁇ 0.1).
  • n-type impurities are doped in the n-contact layer and it is preferable for the n-contact layer to contain n-type impurities within a concentration range of 1 ⁇ 10 17 to 1 ⁇ 10 19 /cm 3 , more preferably 1 ⁇ 10 18 to 1 ⁇ 10 19 /cm 3 for maintaining a satisfactory ohmic contact with the negative electrode, suppressing the generation of cracks, and maintaining satisfactory crystallinity.
  • n-type impurities are not particularly limited, examples thereof include Si, Ge, Sn, Si and Ge are preferable.
  • a preferable range of the growth temperature for the n-contact layer is the same as that of the underlying layer.
  • the GaN based semiconductor constituting the n-contact layer has the same composition as that of the underlying layer and it is preferable to set the sum of the thicknesses of the n-contact layer and the underlying layer within the range of 1 to 20 ⁇ m, more preferably 2 to 15 ⁇ m, and even more preferably 3 to 12 ⁇ m.
  • the crystallinity of the semiconductor is satisfactorily maintained when the sum of the film thicknesses of the n-contact layer and the underlying layer is within the abovementioned range.
  • n-cladding layer between the n-contact layer and the light emitting layer 3. This is because by doing so, the deteriorations in the smoothness occurring on the surface of the n-contact layer can be alleviated.
  • the n-cladding layer can be formed with AlGaN, GaN, GaInN, or the like.
  • the film thickness of the n-cladding layer is not particularly limited, it is preferably within the range of 0.005 to 0.5 ⁇ m and more preferably within the range of 0.005 to 0.1 ⁇ m.
  • the n-type dopant concentration in the n-cladding layer is preferably within the range of 1 ⁇ 10 17 to 1 ⁇ 10 20 /cm 3 and more preferably within the range of 1 ⁇ 10 18 to 1 ⁇ 10 19 /cm 3 . It is preferable that the dopant concentration be within this range for maintaining satisfactory crystallinity and for reducing the operating voltage of the device.
  • a light emitting layer constituted of a GaN based semiconductor, preferably a GaN based semiconductor made of Ga 1-S In S N (0 ⁇ S ⁇ 0.4) is usually used as the light emitting layer that is laminated on the n-type semiconductor layer 2 in the present invention.
  • the film thickness of the light emitting layer 3 is not particularly limited, examples thereof include a film thickness where the quantum effect is achieved, that is, the critical film thickness and, for example, it is preferably within the range of 1 to 10 nm, and more preferably within the range of 2 to 6 nm. It is preferable that the film thickness of the light emitting layer be within the above range from a viewpoint of emission power.
  • the light emitting layer may also be configured as a multiple quantum well (MQW) structure constituted from the abovementioned Ga 1-s In s N layer as a well layer and an Al c Ga 1-c N (0 ⁇ c ⁇ 0.3) barrier layer having a larger bandgap energy than that of the well layer.
  • MQW multiple quantum well
  • the well layer and the barrier layer may be doped with impurities.
  • Growth temperature of the Al c Ga 1-c N barrier layer is preferably greater than or equal to 700°C, and it is more preferable to grow the layer within a temperature range of 800 to 1,100°C since satisfactory crystallinity is achieved.
  • the GaInN well layer is grown within the range of 600 to 900°C, preferably 700 to 900°C. In other words, the growth temperature is preferably changed for different layers in order to achieve satisfactory crystallinity of the MQW structure.
  • the p-type semiconductor layer is usually constituted from a p-cladding layer and a p-contact layer.
  • the p-contact layer may also serve as the p-cladding layer.
  • the p-cladding layer is not particularly limited as long as it has a composition that has a higher bandgap energy than that of the light emitting layer and it can confine carries in the light emitting layer, and preferable examples thereof include an Al d Ga 1-d N (0 ⁇ d ⁇ 0.4, preferably 0.1 ⁇ d ⁇ 0.3) layer. It is preferable that the p-cladding layer be formed from such an AlGaN layer from the viewpoint of the confinement of carriers in the light emitting layer.
  • the film thickness of the p-cladding layer is not particularly limited, it is preferably within the range of 1 to 400 nm and more preferably within the range of 5 to 100 nm.
  • the p-type dopant concentration in the p-cladding layer is preferably within the range of 1 ⁇ 10 18 to 1 ⁇ 10 21 /cm 3 and more preferably within the range of 1 ⁇ 10 19 to 1 ⁇ 10 20 /cm 3 . Satisfactory p-type crystals are obtained without reducing the crystallinity thereof when the p-type dopant concentration is within the abovementioned range.
  • the p-contact layer is a GaN based semiconductor layer containing at least Al e Ga 1-e N (0 ⁇ e ⁇ 0.5, preferably, 0 ⁇ e ⁇ 0.2, more preferably, 0 ⁇ e ⁇ 0.1). It is preferable that the Al composition be within the above range for maintaining satisfactory crystallinity and for satisfactory ohmic contact with a p-ohmic electrode.
  • the p-type impurity (dopant) concentration be within the range of 1 ⁇ 10 18 to 1 ⁇ 10 21 /cm 3 for maintaining a satisfactory ohmic contact, preventing the occurrence of cracks, and maintaining satisfactory crystallinity, and more preferably, the concentration is within the range of 5 ⁇ 10 19 to 5 ⁇ 10 20 /cm 3 .
  • p-type impurities are not particularly limited, preferable examples thereof include Mg.
  • the film thickness is not particularly limited, it is preferably be within the range of 0.01 to 0.5 ⁇ m and more preferably 0.05 to 0.2 ⁇ m. It is preferable that the film thickness be within this range from a viewpoint of emission power.
  • the translucent positive electrode is at least constituted from a translucent conductive oxide film that is in contact with a p-type semiconductor layer.
  • a positive electrode bonding pad is formed on part of the translucent conductive oxide film layer for the electrical connection with a circuit board, a lead frame, or the like.
  • the translucent positive electrode can be formed through a general means well known in this technical field using a material containing at least one of ITO (In 2 O 3 -SnO 2 ), AZnO (ZnO-Al 2 O 3 ), IZnO (In 2 O 3 -ZnO), and GZO (ZnO-Ga 2 O 3 ).
  • the translucent positive electrode can adopt any structure without any limitations including the structures already known.
  • the translucent positive electrode may be formed so as to cover substantially the entire surface of the p-type semiconductor layer, or it may be formed in a lattice shape or a tree shape with gaps present. After the translucent positive electrode is formed, a thermal annealing process may be conducted for alloying or increasing transparency, or it may not be conducted.
  • the positive electrode bonding pad is provided on the translucent positive electrode and as the materials for the positive electrode bonding pad, various structures using Au, Al, Ni, Cu, or the like are known and these known materials and structures can be used without any limitations.
  • the thickness of the positive electrode bonding pad be within the range of 100 to 1,000 nm.
  • the bonding pad has characteristics that, as the thickness thereof increases, bondability is improved. Therefore, it is preferable that that thickness of the positive electrode bonding pad 17 be greater than or equal to 300 nm. In addition, it is preferable that the thickness of the positive electrode bonding pad be equal to or less than 500 nm from the viewpoint of manufacturing cost.
  • the negative electrode bonding pad is formed so as to come into contact with the n-type semiconductor layer of the gallium nitride based compound semiconductor, which is a laminate of the n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer sequentially formed on the substrate.
  • the negative electrode bonding pad when the negative electrode bonding pad is formed, the light emitting layer and the p-type semiconductor layer are partially removed to expose the n-contact layer of the n-type semiconductor layer, and the negative electrode bonding pad is formed on the exposed portion.
  • negative electrodes having various compositions and structures are known and these known negative electrodes can be used without any limitations. They can be formed by a means that has been well known in this technical field.
  • the gallium nitride based compound semiconductor light emitting device described so far can be used to form a lamp by providing a transparent cover due to, for example, a known means for those skilled in the art.
  • the gallium nitride based compound semiconductor light emitting device may be used to form an LED lamp using a conventionally known method without any limitations.
  • the gallium nitride based compound semiconductor light emitting device may be used for various types of lamps, such as a general-purpose cannonball shaped lamp, a side view type lamp for a backlight of a mobile phone, or a top view type lamp used for a display device.
  • a general-purpose cannonball shaped lamp such as a general-purpose cannonball shaped lamp, a side view type lamp for a backlight of a mobile phone, or a top view type lamp used for a display device.
  • the gallium nitride based compound semiconductor light emitting device 30 is adhered to one of two frames 31 and 32 by resin or the like, and the positive electrode bonding pad and the negative electrode bonding pad are bonded to the frames 31 and 32 by wires 33 and 34 formed of gold or the like, respectively. Then, the periphery of the device is molded by a transparent resin (as a mold 35), thereby producing a cannonball shaped lamp.
  • FIG. 1 is a cross sectional diagram schematically showing a gallium nitride based compound semiconductor light emitting device produced in the present Experimental example.
  • a sapphire single crystal was used for a substrate.
  • a concave shape was formed on the sapphire single crystal substrate by employing a known photolithography method. BCl 3 was used as an etching gas for etching the sapphire single crystal substrate.
  • a truncated cone shape (top dimension: 4 ⁇ m, bottom dimension: 2 ⁇ m, height: 6 ⁇ m, and periodic interval: 8 ⁇ m) was formed as the concave shape.
  • AlN was deposited by the RF sputtering method. Al was used as a target and an AlN layer was formed by a process of reactive sputtering with N 2 . By using the pivoted magnetron magnetic circuit, the layer was formed due to the reciprocating movement (one reciprocating movement in 30 seconds) of the simple harmonic oscillating mechanism.
  • the substrate temperature was 700°C and the layer was formed so as to achieve a film thickness of 50 nm.
  • a gallium nitride based compound semiconductor layer was laminated thereon by the sputtering method.
  • the gallium nitride based compound semiconductor layer was formed by laminating an n-type semiconductor layer, a light emitting layer having a multiple quantum well structure, and a p-type semiconductor layer in this order.
  • the n-type semiconductor layer was formed by laminating an undoped GaN underlying layer with a thickness of 6 ⁇ m, a Ge-doped n-type GaN contact layer with a thickness of 2 ⁇ m, and an n-type In 0.1 Ga 0.9 N cladding layer with a thickness of 0.02 ⁇ m in this order.
  • the light emitting layer having a multiple quantum structure was formed by providing a barrier layer on five laminates of a Si-doped GaN barrier layer with a thickness of 16 nm and an In 0.06 Ga 0.94 N well layer with a thickness of 2.5 nm.
  • the p-type semiconductor layer was formed by laminating a Mg-doped p-type Al 0.07 Ga 0.93 N cladding layer with a thickness of 0.01 ⁇ m and a Mg-doped p-type Al 0.02 Ga 0.98 N contact layer with a thickness of 0.18 ⁇ m in this order.
  • the semiconductor was configured such that light was emitted from the surface of the semiconductor layer.
  • the carrier concentration of the n-type GaN contact layer was 1 ⁇ 10 19 cm -3
  • the doping amount of Si in the GaN barrier layer was 1 ⁇ 10 17 cm -3
  • the carrier concentration of the p-type AlGaN contact layer was 5 ⁇ 10 18 cm -3
  • the doping amount of Mg in the p-type AlGaN cladding layer was 5 ⁇ 10 19 cm -3 .
  • the laminated structure of the gallium nitride based compound semiconductor layer was formed by an MOCVD method under usual conditions well known in the technical field.
  • the n-type GaN contact layer in a region for forming the negative electrode was exposed from the gallium nitride based compound semiconductor layer by a reactive ion etching method.
  • a resist was uniformly applied on the entire surface of the p-type semiconductor layer, and the resist was then removed from the region for forming the negative electrode by a known lithography technique.
  • the laminated structure was put into a vacuum deposition apparatus, and Ni and Ti were deposited at a pressure of 4 ⁇ 10 -4 Pa or less by an electron beam method to form films with thicknesses of 50 nm and 300 nm, respectively. Thereafter, the resist and a metal film other than those on the region for forming the negative electrode were removed by a lift-off technique.
  • a semiconductor laminated substrate was mounted on the electrode in an etching chamber of the reactive ion etching apparatus and the pressure of the etching chamber was reduced to 10 -4 Pa. Thereafter, the semiconductor laminate was etched until the n-type GaN contact layer was exposed by supplying Cl 2 , serving as an etching gas. After the etching process, the semiconductor laminate was taken out from the reactive ion etching apparatus, and the etching mask was removed by nitric acid and fluoric acid.
  • a current spreading layer made of ITO (translucent positive electrode) was formed only in the region for forming the positive electrode on the surface of the p-type AlGaN contact layer employing a known photolithography technique and a known lift-off technique.
  • the substrate having the gallium nitride based compound semiconductor layer laminated thereon was first put into a vacuum sputtering apparatus and ITO was deposited so as to achieve a film thickness of 300 nm on the p-type AlGaN contact layer. Then, the substrate was taken out from the vacuum chamber, and a heat treatment was performed in order to improve transparency.
  • the positive electrode bonding pad and the negative electrode bonding pad were formed as follows.
  • a first layer made of Au, a second layer made of Ti, a third layer made of Al, a fourth layer made of Ti, and a fifth layer made of Au were sequentially formed on a portion of the ITO film by a known procedure called lift-off and the same deposition method as described above, thereby forming the five-layer structured positive electrode bonding pad 17.
  • the thicknesses of the Au, Ti, Al, Ti, and Au layers were 50 nm, 20 nm, 10 nm, 100 nm, and 500 nm, respectively.
  • the negative electrode bonding pad 18 was formed on the n-type GaN contact layer, which was exposed by the reactive ion etching method as described above, due to the following processes.
  • a resist was uniformly applied on the entire surface of the exposed region of the n-type GaN contact layer, and the resist was then removed from a portion for forming the negative electrode on the exposed n-type GaN contact layer by a known lithography technique. Then, Ti and Au were respectively deposited with thicknesses of 100 nm and 500 nm on the semiconductor in this order by a general vacuum deposition method, thereby forming the negative electrode bonding pad. Then, the resist was removed by a known method.
  • the back surface of the substrate in the wafer having the positive electrode and the negative electrode formed thereon as described above was ground/polished such that the thickness of the substrate was reduced to 80 ⁇ m, and a laser scriber was used to mark the semiconductor. Then, the semiconductor was cut into chips each having a 350 ⁇ m square.
  • a current of 20 mA was applied to the chip through a probe to measure a forward voltage (driving voltage: Vf). As a result, the forward voltage was 3.3 V.
  • the chip was mounted to a TO-18 package, and the emission power thereof was measured by a tester. When a current of 20 mA was applied, the emission power was 16 mW. In addition, in terms of light emission distribution in the light emitting surface, it was verified that light was emitted from the entire surface of the translucent positive electrode.
  • a gallium nitride based compound semiconductor light emitting device was produced in a similar manner to that of Example 1, except that the AlN buffer layer was formed by employing the MOCVD method instead of the sputtering method.
  • a current of 20 mA was applied to the chip through a probe to measure a forward voltage (driving voltage: Vf). As a result, the forward voltage was 3.3 V.
  • the chip was mounted to a TO-18 package, and the emission power thereof was measured by a tester. When a current of 20 mA was applied, the emission power was 13 mW. In addition, in terms of light emission distribution in the light emitting surface, it was verified that light was emitted from the entire surface of the translucent positive electrode.
  • a gallium nitride based compound semiconductor light emitting device was produced in a similar manner to that of Example 1, except that no uneven pattern composed of concave shapes and convex shapes was formed on the sapphire substrate.
  • a current of 20 mA was applied to the chip through a probe to measure a forward voltage (driving voltage: Vf). As a result, the forward voltage was 3.3 V.
  • the chip was mounted to a TO-18 package, and the emission power thereof was measured by a tester. When a current of 20 mA was applied, the emission power was 12 mW. In addition, in terms of light emission distribution in the light emitting surface, it was verified that light was emitted from the entire surface of the translucent positive electrode.
  • Comparative Examples 1 and 2 that the output improves when an uneven pattern composed of concave shapes and convex shapes is formed on the sapphire substrate.
  • Example 1 and Comparative Example 1 that, in addition to the formation of an uneven pattern composed of a concave shape or a convex shape on the sapphire substrate, the formation of a buffer layer by the sputtering method further improves the output.
  • the present invention can be applied to a light emitting device, and in particular can be applied to a method for producing a light emitting device that is highly reliable and has excellent light emission efficiency and a lamp that includes the light emitting device produced by employing the method.

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Claims (7)

  1. Procédé de fabrication d'un dispositif semiconducteur électroluminescent à base de GaN présentant au moins une couche tampon (102), une couche semiconductrice de type n (103), une couche électroluminescente (104), et une couche semiconductrice de type p (105) sur un substrat translucide (101), sur lequel un motif irrégulier composé d'une forme convexe est formé, la forme convexe étant l'une quelconque parmi un cône circulaire, une pyramide polygonale, un cône tronqué et une pyramide polygonale tronquée, le procédé comprenant la formation de la couche tampon (102) par un procédé de pulvérisation, qui est exécuté dans un appareil présentant un circuit magnétique oscillant de type magnétron, dans lequel la taille de la partie convexe satisfait la relation suivante: le diamètre de la base de la partie convexe ou la longueur de la ligne diagonale de la base de la partie convexe est inférieure à la hauteur de la partie convexe.
  2. Procédé de fabrication d'un dispositif semiconducteur électroluminescent à base de GaN selon la revendication 1, dans lequel la couche tampon contient de l'AlN, du ZnO, du Mg ou du Hf.
  3. Procédé de fabrication d'un dispositif semiconducteur électroluminescent à base de GaN selon la revendication 1 ou 2, dans lequel le substrat translucide est un monocristal de saphir.
  4. Procédé de fabrication d'un dispositif semiconducteur électroluminescent à base de GaN selon l'une quelconque des revendications 1 à 3, dans lequel la forme convexe est un cône tronqué et la hauteur du cône tronqué est supérieure au diamètre inférieur du cône tronqué.
  5. Procédé de fabrication d'un dispositif semiconducteur électroluminescent à base de GaN selon l'une quelconque des revendications 1 à 3, dans lequel la forme convexe est une pyramide polygonale tronquée telle qu'une pyramide triangulaire tronquée, une pyramide quadrangulaire tronquée, une pyramide pentagonale tronquée ou une pyramide hexagonale tronquée, et la hauteur de la pyramide polygonale tronquée est supérieure à une ligne diagonale de la base de la pyramide polygonale tronquée.
  6. Procédé de fabrication d'un dispositif semiconducteur électroluminescent à base de GaN selon l'une quelconque des revendications 1 à 3, dans lequel la forme convexe est un cône circulaire, et la hauteur du cône circulaire est supérieure au diamètre inférieur du cône circulaire.
  7. Procédé de fabrication d'un dispositif semiconducteur électroluminescent à base de GaN selon l'une quelconque des revendications 1 à 3, dans lequel la forme convexe est une pyramide polygonale telle qu'une pyramide triangulaire, une pyramide quadrangulaire, une pyramide pentagonale ou une pyramide hexagonale, et la hauteur de la pyramide polygonale est supérieure à une ligne diagonale de la base de la pyramide polygonale.
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EP2006921A1 (fr) 2008-12-24
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TW200805711A (en) 2008-01-16
KR20080109835A (ko) 2008-12-17
CN101410992A (zh) 2009-04-15
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EP2006921A4 (fr) 2014-08-27
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US7968361B2 (en) 2011-06-28
US20090114933A1 (en) 2009-05-07

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